CN107507922A - One kind series connection organic electroluminescence device - Google Patents
One kind series connection organic electroluminescence device Download PDFInfo
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- CN107507922A CN107507922A CN201710501882.3A CN201710501882A CN107507922A CN 107507922 A CN107507922 A CN 107507922A CN 201710501882 A CN201710501882 A CN 201710501882A CN 107507922 A CN107507922 A CN 107507922A
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- charge generating
- organic electroluminescence
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
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Abstract
The invention discloses one kind series connection organic electroluminescence device, the device includes substrate, anode, the first functional layer, charge generating layers, the second functional layer and negative electrode successively from bottom to top；First functional layer includes the first hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer successively from bottom to top；Second functional layer includes the second hole injection layer, the second hole transmission layer, the second luminescent layer, the second electron injecting layer and negative electrode successively from bottom to top, the decorative layer of charge generating layers is provided between first functional layer and the charge generating layers or between second functional layer and the charge generating layers, the decorative layer of the charge generating layers is KBH4With Ag films.The luminescent device of the present invention has novelty, simple in construction, technique is simple, and has the advantages that efficient charge generating layers by rate.
Description
Technical field
The present invention relates to organic semiconductor technologies field, more particularly to a kind of efficiently series connection organic electroluminescence device.
Background technology
OLED (English full name is Organic Light Emitting Diodes, is looked like for organic electroluminescence device,
Abbreviation OLED) have from main light emission, visual angle is wide, in light weight, Acclimation temperature scope is wide, area is big, all solidstate, flexibility, power consumption
The many merits such as low, fast response time and manufacturing cost are low, there is important application with lighting field in display, thus learned
The extensive concern of art circle and industrial quarters.
In order to further improve the efficiency of device and life-span, multiple independent luminescence units are stacked up by researcher, are made
An equal amount of electric current successively flows through multiple different luminescence units and carries out common light so as to improve luminosity and efficiency, shape
Articulamentum generally is used as by multiple hairs with charge generating layers (charge generation layer, CGL) into tandem OLED
Light unit devices in series gets up compared with single-shot light unit device, and the current efficiency and luminosity of Tandem devices can
It is multiplied, and under same brightness, the current density of Tandem devices is relatively low, thus its life-span also greatly increases .2005,
Ma Dongge of Changchun Institute of Applied Chemistry et al. reports series connection WOLED first, and the structure of device is：ITO/NPB/DNA/BCP/Alq3/
BCP:Li/V2O5/NPB/Alq3:DCJTB/Alq3/ LiF/Al (Appl.Phys.Lett.2005,87,173510.) wherein with
DNA/BCP/Alq3Blue light and green glow, Alq are produced as the first luminescence unit3:DCJTB produces feux rouges as the second luminescence unit,
BCP:Li/V2O5Two luminescence unit holes are effectively connected as charge generating layers and electronics produces in charge generating layers,
Under electric field action, adjacent NPB and Alq are respectively transmitted to3Layer in and they pass through contrast the first luminescence unit it is bluish-green
Optical device (2.2cdA-1,0.5lm·W-1,890cd·m-2) and the second luminescence unit red device (6cdA-1,
2.1lm·W-1,8300cd·m-2), the current efficiency and brightness for finding series connection WOLED are both greater than two single-shot light unit devices
Summation (maximal efficiency is up to 10.7cdA-1, high-high brightness 10200cdm-2), and power efficiency is then equal to two single-shots
Summation (the 2.6lmW of light unit device-1) simultaneously, Chang et al. is using the relatively low Mg of optical absorptivity:Alq3/WO3As
Charge generating layers, two single white-light emitting units are connected, find to be influenceed by microcavity effect, the efficiency for the WOLED that connects
(22cd·A-1) it is three times of single-shot light unit device, and in 100cdm-2Under brightness, the life-span is more than 80000h
(Appl.Phys.Lett.2005,87,253501.) is nearest, and Son et al. synthesizes a kind of efficient blue phosphorescent main body first
(TATA), can obtain based on the luminous high efficiency blue OLED (46.2cdA of FIrpic-1,45.4lm·W-1), and will be efficient
Gold-tinted elementary layer (86.8cdA-1,90.5lm·W-1) pass through charge generating layers TmPyPB：Rb2CO3/ Al/HAT-CN is connected
Connect devices opens bright voltage (brightness 1cdm-2) as little as 4.55V, maximum power efficiency 65.4lmW-1, maximum current
Efficiency is 129.5cdA-1, maximum external quantum efficiency is 49.5%. even in 1000cdm-2Under brightness, the power effect of device
It is 63.1lmW that rate, which still may be up to,-1, current efficiency is up to 128.8cdA-1, external quantum efficiency is up to 49.2%, and this is fully opened up
The good prospect (J.Mater.Chem.C 2013,1,5008.) of tandem OLED is shown.
Found according to prior art how to prepare the key that efficient charge generating layers are Tandem devices, because electric charge is given birth to
Stratification causes the efficiency of Tandem devices and life-span to greatly improve.
In view of the shortcomings of the prior art, provide it is a kind of it is novel, simple in construction, technique is simple, and with efficient electric charge life
Stratification is by rate organic electroluminescence device to overcome prior art deficiency very necessary.
The content of the invention
It is an object of the invention to propose a kind of series connection organic electroluminescence device, its structure is novel simply, technique is simple,
And there are efficient charge generating layers.
The technical solution adopted in the present invention：One kind series connection organic electroluminescence device, the device is from bottom to top successively
Including substrate, anode, the first functional layer, charge generating layers, the second functional layer and negative electrode；First functional layer from bottom to top according to
It is secondary including the first hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer；Second functional layer
Include the second hole injection layer, the second hole transmission layer, the second luminescent layer, the second electron injecting layer and the moon successively from bottom to top
Pole.
Preferably, between first functional layer and the charge generating layers or second functional layer and the electric charge
The decorative layer of charge generating layers is provided between generation layer, the decorative layer of the charge generating layers is KBH4With Ag films.
Preferably, the charge generating layers include at least one layer of metal level and inorganic matter KBH4, or the charge generating layers
For HAT-CN and NPB films；The metal level is made up of any of Ag, Au, Al, Cu, Ca, Mg, Li material；It is described inorganic
Thing KBH4 thickness is 0.1-4nm.
Preferably, the thickness of the metal level is preferably 0.1-7nm for the thickness of 0.1-20nm or described metal levels.
Preferably, first hole transmission layer and second hole transmission layer include the NPB films stacked gradually
With TCTA films；Or first hole transmission layer and the equal TCTA films of second hole transmission layer.
Preferably, first electron transfer layer and second electron transfer layer are TmPyPB films or Bepp2Film.
Preferably, first electron injecting layer and second electron injecting layer are Cs2CO3Film.
Preferably, first luminescent layer and the second luminescent layer are yellow phosphorescence layer, and the yellow phosphorescence layer is CBP：
Ir(dmppy)2(dpp) film.
Preferably, the hole injection layer is HAT-CN films.
Preferably, the anode is ito thin film, and the negative electrode is Al films, and the substrate is the good glass base of translucency
Plate.
Compared with prior art, the beneficial effects of the invention are as follows：(1) first functional layer and described second of the invention
Functional layer make it that caused hole is maximumlly combined into exciton with electronic energy in device, so as to produce photon；(2) institute of the present invention
Charge generating layers realization is stated to connect at least two functional layers；(3) charge generating layers of the present invention can be produced effectively
Hole and electronics, and can make it that caused electric charge is separated, so as to ensure the high-performance of device；(4) it is of the present invention
Metal level is adjacent with KBH4 so that it can separate electric charge very well；(5) metal level of the present invention can play segment anode effect,
Therefore its compared to KBH4 closer in the second luminescence unit；(6) KBH4 of the present invention primarily serves electron injection and biography
Defeated effect, due to KBH4It is easy to decomposite metal K ions, and K ions have relatively low work function, chemical property is relatively lived
Sprinkle, electron injection efficiency can be improved with adjacent organic layer material reaction, so its electron transfer layer with the first luminescent layer
It is adjacent so that electronics preferably separates；(7) metal level of the present invention can play segment anode effect, therefore its compared to
KBH4 is closer in the second luminescence unit；The KBH4Electron injection and transmitting effect are primarily served, so it and the first hair
The electron transfer layer of light unit is adjacent so that electronics preferably separates；KBH4The electron injection and biography for improving device can be played
Defeated contributory part：Due to KBH4It is easy to decomposite metal K ions, and K ions have relatively low work function, chemical property compares
Vivaciously, electron injection efficiency can be improved with adjacent organic layer material reaction, strengthens the performance of device.
Brief description of the drawings
Fig. 1 is a kind of one of which structural representation for organic electroluminescence device of connecting of the present invention；
Fig. 2 is a kind of structural representation of the embodiment 1 for organic electroluminescence device of connecting of the present invention；
Fig. 3 is a kind of performance map for series connection organic electroluminescence device that embodiment 1 is prepared.
Embodiment
Technical scheme is further illustrated with reference to specific embodiment.
As shown in figure 1, a kind of series connection organic electroluminescence device, the device include successively from bottom to top substrate, anode,
First functional layer, charge generating layers, the second functional layer and negative electrode；First functional layer includes the first hole successively from bottom to top
Implanted layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer；Second functional layer is wrapped successively from bottom to top
Include the second hole injection layer, the second hole transmission layer, the second luminescent layer, the second electron injecting layer and negative electrode.
In the concrete technical scheme of the present invention, between first functional layer and the charge generating layers or described the
The decorative layer of charge generating layers is provided between two functional layers and the charge generating layers, the decorative layer of the charge generating layers is
KBH4With Ag films.
The charge generating layers include at least one layer of metal level and inorganic matter KBH4, and the metal level is adjacent with KBH4, makes
Electric charge can be separated very well by obtaining it；Or the charge generating layers are HAT-CN and NPB films；The metal level be Ag, Au, Al, Cu,
The metal material of any of Ca, Mg, Li good conductivity is made, and the thickness of the inorganic matter KBH4 is 0.1-4nm, wherein institute
State KBH4 and primarily serve electron injection and transmitting effect, so it is adjacent with the electron transfer layer of the first luminescent layer so that electronics
Preferably separation.The thickness of the metal level is preferably 0.1-7nm for the thickness of 0.1-20nm or described metal levels, the metal
Layer can play segment anode effect, therefore its compared to KBH4 closer in the second luminescence unit.
In the concrete technical scheme of the present invention, first hole transmission layer and second hole transmission layer include
The NPB films and TCTA films stacked gradually；Or first hole transmission layer and the equal TCTA of the second hole transmission layer
Film.
First electron transfer layer and second electron transfer layer are TmPyPB films or Bepp2Film；Described
One electron injecting layer and second electron injecting layer are Cs2CO3Film；First luminescent layer and the second luminescent layer are Huang
Color phosphorescent layer, the yellow phosphorescence layer are CBP：Ir(dmppy)2(dpp) film；The hole injection layer is HAT-CN films；
The anode is ito thin film, and the negative electrode is Al films, and the substrate is the good glass substrate of translucency.
Embodiment 1
As shown in Fig. 2 a kind of series connection organic electroluminescence device A, device A structure are：ITO/HAT-CN
(100nm)/NPB(15nm)/TCTA(5nm)/CBP：Ir(dmppy)2(dpp) (10nm, 8%)/Bepp2(25nm)/KBH4
(1nm)/Ag(0.5nm)/HAT-CN(100nm)/NPB(15nm)/TCTA(5nm)/CBP：Ir(dmppy)2(dpp) (10nm,
8%)/TmPyPB (50nm)/Cs2CO3(1nm)/Al(200nm)。
Device A structure is from bottom to top added by following functions stacking successively：
Substrate, anode, the first hole injection layer, the first hole transmission layer, the first yellow phosphorescence layer, the first electric transmission
Layer, the decorative layer of charge generating layers, charge generating layers, the second hole injection layer, the second hole transmission layer, the second yellow phosphorescence
Layer, the second electron transfer layer, the second electron injecting layer, negative electrode.
Aforesaid substrate is glass.
Above-mentioned anode is ito thin film.
Above-mentioned first hole injection layer and the second hole injection layer are the thick HAT-CN films of 100nm.
Above-mentioned first hole transmission layer and the second hole transmission layer include the NPB films and 5nm of the 15nm thickness stacked gradually
Thick TCTA films.
Above-mentioned first yellow phosphorescence layer and the second yellow phosphorescence layer are the thick CBP of 10nm：Ir(dmppy)2(dpp) film.
Above-mentioned first electron transfer layer is the thick Bepp of 25nm2Film.
The decorative layer of above-mentioned charge generating layers is the thick KBH of 1nm4With 0.5nm Ag films.
Above-mentioned charge generating layers are 120nm thick HAT-CN and 15nm NPB films.
Above-mentioned first hole transmission layer and the first hole transmission layer are the thick TCTA films of 5nm.
Above-mentioned first yellow phosphorescence layer and the first yellow phosphorescence layer are the thick CBP of 10nm：Ir(dmppy)2(dpp) film.
Above-mentioned second electron transfer layer is the thick TmPyPB films of 50nm.
Above-mentioned first electron injecting layer and the first electron injecting layer are the thick Cs of 1nm2CO3Film.
Above-mentioned negative electrode is the thick Al films of 200nm.
There is the organic electroluminescence device A of high efficiency charge generation layer to be prepared by the following method for this：
S1, ito thin film is prepared as anode using sputtering method on substrate.
S2, the HAT-CN for preparing 100nm using vacuum deposition method on anode again are used as the first hole injection layer.
S3, the NPB films that 15nm thickness is prepared on above-mentioned first hole injection layer with vacuum deposition method.
S4, the TCTA films that 5nm thickness is prepared on above-mentioned NPB films with vacuum deposition method.
S5, the CBP that 10nm thickness is prepared on above-mentioned TCTA films with vacuum deposition method：Ir(dmppy)2(dpp) it is thin
Film is as the first yellow phosphorescence layer.
S6, the Bepp that 25nm thickness is prepared on above-mentioned first yellow phosphorescence layer with vacuum deposition method2Film is as
One electron transfer layer.
S7, in above-mentioned first electric transmission the thick KBH of 1nm are prepared with vacuum deposition method on layer by layer4It is thin with 0.5nm Ag
Decorative layer of the film as charge generating layers.
S8, the thick HAT-CN and 15nm of 100nm is prepared with vacuum deposition method on the decorative layer of above-mentioned charge generating layers
NPB films thick be used as charge generating layers.
S9, the HAT-CN films for preparing on above-mentioned charge generating layers 100nm thickness using vacuum deposition method are used as second
Hole injection layer.
S10, the TCTA films for preparing on above-mentioned second hole injection layer 5nm thickness using vacuum deposition method are used as second
Hole transmission layer.
S11, the CBP that 10nm thickness is prepared on above-mentioned second hole transmission layer with vacuum deposition method：Ir(dmppy)2
(dpp) film is as the second yellow phosphorescence layer.
S12, prepared on above-mentioned second yellow phosphorescence layer using vacuum deposition method the TmPyPB films of 50nm thickness as
Second electron transfer layer.
S13, the Cs that 1nm is prepared on above-mentioned second electron transfer layer with vacuum deposition method2CO3Film is as the second electricity
Sub- implanted layer.
S14, the Al films for preparing on above-mentioned second electron injecting layer 200nm using vacuum deposition method are used as negative electrode.
The above-mentioned device A being prepared performance is detected, device A performance plot is as shown in Figure 2.Device A's
Maximal efficiency is 72cd/A.
And in device A preparation technology, charge generating layers are not related to the use of any doping techniques, there is technique letter
Just the advantages of, cost is low.
For those skilled in the art, technical scheme that can be as described above and design, make other each
Kind is corresponding to be changed and deforms, and all these change and deformed the protection model that should all belong to the claims in the present invention
Within enclosing.
Claims (10)
1. one kind series connection organic electroluminescence device, it is characterised in that：The device from bottom to top successively include substrate, anode,
First functional layer, charge generating layers, the second functional layer and negative electrode；First functional layer includes the first hole successively from bottom to top
Implanted layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer；Second functional layer is wrapped successively from bottom to top
Include the second hole injection layer, the second hole transmission layer, the second luminescent layer, the second electron injecting layer and negative electrode.
A kind of 2. series connection organic electroluminescence device according to claim 1, it is characterised in that：First functional layer with
The modification of charge generating layers is provided between the charge generating layers or between second functional layer and the charge generating layers
Layer, the decorative layer of the charge generating layers is KBH4With Ag films.
A kind of 3. series connection organic electroluminescence device according to claim 1, it is characterised in that：The charge generating layers bag
Containing at least one layer of metal level and inorganic matter KBH4, or the charge generating layers are HAT-CN and NPB films；The metal level is
Any of Ag, Au, Al, Cu, Ca, Mg, Li material are made；The thickness of the inorganic matter KBH4 is 0.1-4nm.
A kind of 4. series connection organic electroluminescence device according to claim 1, it is characterised in that：The thickness of the metal level
Thickness for 0.1-20nm or described metal levels is preferably 0.1-7nm.
A kind of 5. series connection organic electroluminescence device according to claim 1, it is characterised in that：First hole transport
Layer and second hole transmission layer include the NPB films and TCTA films stacked gradually；Or first hole transport
Layer and the equal TCTA films of second hole transmission layer.
A kind of 6. series connection organic electroluminescence device according to claim 1, it is characterised in that：First electric transmission
Layer and second electron transfer layer are TmPyPB films or Bepp2Film.
A kind of 7. series connection organic electroluminescence device according to claim 1, it is characterised in that：First electron injection
Layer and second electron injecting layer are Cs2CO3Film.
A kind of 8. series connection organic electroluminescence device according to claim 1, it is characterised in that：First luminescent layer and
Second luminescent layer is yellow phosphorescence layer, and the yellow phosphorescence layer is CBP：Ir(dmppy)2(dpp) film.
A kind of 9. series connection organic electroluminescence device according to claim 1, it is characterised in that：The hole injection layer is
HAT-CN films.
A kind of 10. series connection organic electroluminescence device according to claim 1, it is characterised in that：The anode is that ITO is thin
Film, the negative electrode are Al films, and the substrate is the good glass substrate of translucency.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649130A (en) * | 2018-05-10 | 2018-10-12 | 重庆邮电大学 | A kind of lamination blue light organic electroluminescence device and its manufacturing process |
| CN110767715A (en) * | 2019-03-29 | 2020-02-07 | 昆山国显光电有限公司 | Display device, OLED light-transmitting substrate and OLED substrate thereof |
| CN112467049A (en) * | 2020-11-18 | 2021-03-09 | 安徽熙泰智能科技有限公司 | Structure of OLED device |
| CN113851597A (en) * | 2021-09-29 | 2021-12-28 | 京东方科技集团股份有限公司 | Serial-type OLED device and display |
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| CN102034934A (en) * | 2009-09-29 | 2011-04-27 | 乐金显示有限公司 | White organic light emitting device |
| US20140084269A1 (en) * | 2012-09-26 | 2014-03-27 | Universal Display Corporation | Three stack hybrid white oled for enhanced efficiency and lifetime |
| CN106328820A (en) * | 2016-09-27 | 2017-01-11 | 华南理工大学 | Laminated organic electroluminescent device |
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| CN101694849A (en) * | 2009-09-22 | 2010-04-14 | 昆山维信诺显示技术有限公司 | Organic electroluminescence lamination device |
| CN102034934A (en) * | 2009-09-29 | 2011-04-27 | 乐金显示有限公司 | White organic light emitting device |
| US20140084269A1 (en) * | 2012-09-26 | 2014-03-27 | Universal Display Corporation | Three stack hybrid white oled for enhanced efficiency and lifetime |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649130A (en) * | 2018-05-10 | 2018-10-12 | 重庆邮电大学 | A kind of lamination blue light organic electroluminescence device and its manufacturing process |
| CN110767715A (en) * | 2019-03-29 | 2020-02-07 | 昆山国显光电有限公司 | Display device, OLED light-transmitting substrate and OLED substrate thereof |
| CN110767715B (en) * | 2019-03-29 | 2022-03-01 | 昆山国显光电有限公司 | Display device, OLED light-transmitting substrate and OLED substrate thereof |
| CN112467049A (en) * | 2020-11-18 | 2021-03-09 | 安徽熙泰智能科技有限公司 | Structure of OLED device |
| CN113851597A (en) * | 2021-09-29 | 2021-12-28 | 京东方科技集团股份有限公司 | Serial-type OLED device and display |
| CN113851597B (en) * | 2021-09-29 | 2024-02-02 | 京东方科技集团股份有限公司 | Tandem OLED device and display |
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Application publication date: 20171222 |