CN104882546A - Organic electroluminescent device and preparation method thereof - Google Patents

Organic electroluminescent device and preparation method thereof Download PDF

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Publication number
CN104882546A
CN104882546A CN201410071902.4A CN201410071902A CN104882546A CN 104882546 A CN104882546 A CN 104882546A CN 201410071902 A CN201410071902 A CN 201410071902A CN 104882546 A CN104882546 A CN 104882546A
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layer
hole injection
injection layer
phenyl
bis
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周明杰
钟铁涛
王平
冯小明
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Priority to CN201410071902.4A priority Critical patent/CN104882546A/en
Publication of CN104882546A publication Critical patent/CN104882546A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Abstract

The invention relates to an organic electroluminescent device and a preparation method thereof, wherein the organic electroluminescent device comprises an anode conductive substrate, a first hole injection layer, a second hole injection layer, a hole transport layer, a red light emitting layer, an electron transmission layer, an electron injection layer and a cathode layer; wherein the first hole injection layer, the second hole injection layer, the hole transport layer, the red light emitting layer, the electron transmission layer, the electron injection layer and the cathode layer are successively laminated on one surface of the anode conductive substrate. The first hole injection layer and the second hole injection layer are respectively made of mixed hole material which is obtained through doping a p-type material into a hole transport material, thereby effectively improving separation efficiency between holes and electrons at a PN junction interface. According to the organic electroluminescent device, through arranging two hole injection layers which are made of same material, not only are charge separation efficiency and luminous efficiency improved, but also preparing process complexity is reduced through the p-type material which facilitates vacuum evaporating.

Description

Organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to organic electroluminescence device field, particularly relate to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) has the advantage of following uniqueness: (1) OLED belongs to diffused area source, needs to obtain large-area white light source by extra light-conducting system unlike light-emitting diode (LED); (2) due to the diversity of luminous organic material, OLED illumination can the light of color wanted of design as required, and current Small molecular OLED has obtained the light of all colours comprising white-light spectrum; (3) OLED can at multiple substrate as glass, pottery, metal, plastic or other material make, freer when this makes design lighting source; (4) adopt the mode making OLED display to make OLED illumination panel, information can be shown while illumination; (5) OLED also can be used as controlled look in the illumination system, allows user to regulate light atmosphere according to individual demand.
Due to above-mentioned advantage, OLED has become a kind of Display Technique and light source of great potential, meets the development trend of information age mobile communication and information displaying, and the requirement of green lighting technique, is the focal point of current lot of domestic and foreign researcher.But although the scientific research personnel of whole world various countries is by selecting suitable material and rational device structure design, made the property indices of OLED be greatly improved, the luminous efficiency of traditional OLED is still lower, limits it and further applies.
Summary of the invention
The object of the present invention is to provide a kind of organic electroluminescence device, the problem that the luminous efficiency for solving organic electroluminescence device traditional in prior art is lower.
The present invention also aims to the preparation method that a kind of organic electroluminescence device is provided, for the preparation of above-mentioned organic electroluminescence device.
For reaching above-mentioned purpose, the technical solution adopted in the present invention is:
A kind of organic electroluminescence device of the present invention, comprise anode conducting substrate, stack gradually the first hole injection layer, the second hole injection layer, hole transmission layer, red light emitting layer, electron transfer layer, electron injecting layer and the cathode layer be located on a surface of described anode conducting substrate, wherein
Described first hole injection layer is identical with the material of described second hole injection layer, the hybrid holes material of material all for being made up of hole mobile material doped p type material of described first hole injection layer and described second hole injection layer; In described hybrid holes material, the percentage by weight that described p-type material accounts for described hole mobile material is 25wt% ~ 35wt%;
Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) or 1, any one in 1-bis-[4-[N, N'-bis-(p-tolyl) is amino] phenyl] cyclohexane (TAPC);
Described p-type material is molybdenum trioxide (MoO 3), tungstic acid (WO 3), vanadic oxide (V 2o 5) or rhenium trioxide (ReO 3) in any one.
In one embodiment of the invention, the thickness of described first hole injection layer and described second hole injection layer is 10nm ~ 15nm.
In one embodiment of the invention, the material of described hole transmission layer is identical with the described hole mobile material in described hybrid holes material; The thickness of described hole transmission layer is 30nm ~ 50nm.
In one embodiment of the invention, the material of described red light emitting layer is the mixed luminescence material be made up of material of main part doping guest materials; In described mixed luminescence material, the percentage by weight that described guest materials accounts for described material of main part is 0.5wt% ~ 2wt%;
Described material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 9,9'-(1,3-phenyl) two-9H-carbazoles (mCP), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 1, any one in 1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane (TAPC) or 9,10-two (1-naphthyl) anthracene (ADN);
Described guest materials is that two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ) 2(acac)), two [2-(phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanediones) close iridium (III) (PQIr), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III) ((fbi) 2ir (acac)), two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanediones) close iridium (III) ((F-BT) 2ir (acac)), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close iridium (III) (Ir (btp) 2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) in any one;
The thickness of described red light emitting layer is 10nm ~ 30nm.
In one embodiment of the invention, the material of described electron injecting layer is the mixed electronic material be made up of electron transport material Doped n-type material; In described mixed electronic material, the percentage by weight that described N-shaped material accounts for described mixed electronic material is 25wt% ~ 35wt%;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phens (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq 3), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, any one in 2,4-triazole (TAZ) or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI);
Described N-shaped material is cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), cesium azide (CsN 3), lithium carbonate (Li 2cO 3), lithium fluoride (LiF) or lithia (Li 2o) any one in; m
The material of described electron transfer layer is identical with the described electron transport material in described mixed electronic material;
The thickness of described electron injecting layer is 20nm ~ 40nm;
The thickness of described electron transfer layer is 10nm ~ 60nm.
In one embodiment of the invention, the material of described cathode layer is any one in argent (Ag), aluminium (Al) or gold (Au); The thickness of described cathode layer is 50nm ~ 200nm.
In one embodiment of the invention, described anode conducting substrate comprises substrate and anode conductive layer, and wherein, the material of described substrate is glass, and the material of described anode conductive layer is tin indium oxide (ITO), and the thickness of described anode conducting substrate is 100nm ~ 150nm.
The preparation method of a kind of organic electroluminescence device of the present invention, comprises the following steps:
Anode conducting substrate is provided, cleans, for subsequent use after dry, activation processing;
Adopt vacuum evaporation technology, described anode conducting substrate surface stacks gradually evaporation first hole injection layer, the second hole injection layer, hole transmission layer, red light emitting layer, electron transfer layer, electron injecting layer and cathode layer; Wherein,
Described first hole injection layer is identical with the material of described second hole injection layer; The hybrid holes material of material all for being made up of hole mobile material doped p type material of described first hole injection layer and described second hole injection layer; In described hybrid holes material, the percentage by weight that described p-type material accounts for described hole mobile material is 25wt% ~ 35wt%;
Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) or 1, any one in 1-bis-[4-[N, N'-bis-(p-tolyl) is amino] phenyl] cyclohexane (TAPC);
Described p-type material is molybdenum trioxide (MoO 3), tungstic acid (WO 3), vanadic oxide (V 2o 5) or rhenium trioxide (ReO 3) in any one;
After above-mentioned preparation process completes, obtain described organic electroluminescence device.
In one embodiment of the invention, the material of described hole transmission layer is identical with the described hole mobile material in described hybrid holes material;
The material of described red light emitting layer is the mixed luminescence material be made up of material of main part doping guest materials; In described mixed luminescence material, the percentage by weight that described guest materials accounts for described material of main part is 0.5wt% ~ 2wt%;
Described material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 9,9'-(1,3-phenyl) two-9H-carbazoles (mCP), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 1, any one in 1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane (TAPC) or 9,10-two (1-naphthyl) anthracene (ADN);
Described guest materials is that two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ) 2(acac)), two [2-(phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanediones) close iridium (III) (PQIr), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III) ((fbi) 2ir (acac)), two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanediones) close iridium (III) ((F-BT) 2ir (acac)), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close iridium (III) (Ir (btp) 2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) in any one;
The material of described electron injecting layer is the mixed electronic material be made up of electron transport material Doped n-type material; In described mixed electronic material, the percentage by weight that described N-shaped material accounts for described mixed electronic material is 25wt% ~ 35wt%;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phens (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq 3), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, any one in 2,4-triazole (TAZ) or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI);
Described N-shaped material is cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), cesium azide (CsN 3), lithium carbonate (Li 2cO 3), lithium fluoride (LiF) or lithia (Li 2o) any one in;
The material of described electron transfer layer is identical with the described electron transport material in described mixed electronic material;
The material of described cathode layer is any one in argent (Ag), aluminium (Al) or gold (Au);
Described anode conducting substrate comprises substrate and anode conductive layer, and wherein, the material of described substrate is glass, and the material of described anode conductive layer is tin indium oxide (ITO).
In one embodiment of the invention, the evaporation rate of described vacuum evaporation technology is vacuum degree is 1 × 10 -5pa ~ 1 × 10 -3pa.
Compared with prior art, organic electroluminescence device of the present invention and preparation method thereof has the following advantages: the first hole injection layer of this organic electroluminescence device and the material of the second hole injection layer all adopt the hybrid holes material of identical hole mobile material doped p type material composition, and this identical hybrid holes material is more conducive to transmission and the injection in hole; This double-deck hole injection layer all adopts identical doped structure, effectively raises hole and the separative efficiency of electronics on PN junction interface; In addition, the material of red light emitting layer all adopts the mixed luminescence material of material of main part doping ruddiness guest materials composition, the material of hole transmission layer all adopts the hole mobile material that hole injection layer two-layer with this is identical, further increases the luminous efficiency of organic electroluminescence device.The present invention, by arranging the hole injection layer of two-layer identical material, not only increases the efficiency of separation of charge, improves luminous efficiency, and by selecting the p-type material being convenient to vacuum evaporation, reduces the complexity of preparation technology.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic electroluminescence device of the present invention.
Wherein, description of reference numerals is as follows:
1 organic electroluminescence device
101 anode conducting substrates
101a substrate
101b anode conductive layer
102 first hole injection layers
103 second hole injection layers
104 hole transmission layers
105 red light emitting layers
106 electron transfer layers
107 electron injecting layers
108 cathode layers
Embodiment
Below with reference to accompanying drawing 1, elaboration is further given to a kind of organic electroluminescence device of the present invention and preparation method thereof.
As shown in Figure 1, this organic electroluminescence device 1 comprises: anode conducting substrate 101, stack gradually the first hole injection layer 102, second hole injection layer 103, hole transmission layer 104, red light emitting layer 105, electron transfer layer 106, electron injecting layer 107 and the cathode layer 108 be located on a surface of anode conducting substrate 101, wherein, anode conducting substrate 101 comprises substrate 101a and anode conductive layer 101b.
Below in conjunction with embodiment 1 ~ 6, organic electroluminescence device 1 of the present invention and preparation method thereof is illustrated, because the layer structure of the organic electroluminescence device 1 of embodiment 1 ~ 6 is basically identical, therefore is all shown as with Fig. 1 and illustrates:
Embodiment 1
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/MoO 3: NPB (30:100)/MoO 3: NPB (30:100)/NPB/Ir (MDQ) 2(acac): TCTA (0.5:100)/Bphen/Cs 2cO 3: Bphen (30:100)/Ag, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 150nm;
(b) first preparation of hole injection layer 102:
Be 1 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 12.5nm on the surface, material used is MoO 3be entrained in the hybrid holes material formed in NPB, be expressed as MoO 3: NPB, MoO 3be 30:100 with the percentage by weight of NPB, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 1 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 12.5nm on the surface, material used is MoO 3be entrained in the hybrid holes material formed in NPB, be expressed as MoO 3: NPB, MoO 3be 30:100 with the percentage by weight of NPB, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 1 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 40nm on the surface, material used is NPB, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 20nm on the surface, material used is Ir (MDQ) 2(acac) be entrained in the mixed luminescence material formed in TCTA, be expressed as Ir (MDQ) 2(acac): TCTA, Ir (MDQ) 2(acac) be 0.5:100 with the percentage by weight of TCTA, evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 1 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 35nm on the surface, material used is Bphen, and evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 30nm on the surface, material used is Cs 2cO 3be entrained in the mixed electronic material formed in Bphen, be expressed as Cs 2cO 3: Bphen, Cs 2cO 3be 30:100 with the percentage by weight of Bphen, evaporation rate used is
The preparation of (h) cathode layer 108:
Be 1 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 125nm on the surface, material used is metal A g, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Embodiment 2
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/WO 3: TCTA (25:100)/WO 3: TCTA (25:100)/TCTA/PQIr:mCP (2:100)/BCP/CsF:BCP (25:100)/Al, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 120nm;
(b) first preparation of hole injection layer 102:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 10nm on the surface, material used is WO 3be entrained in the hybrid holes material formed in TCTA, be expressed as WO 3: TCTA, WO 3be 25:100 with the percentage by weight of TCTA, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 10nm on the surface, material used is WO 3be entrained in the hybrid holes material formed in TCTA, be expressed as WO 3: TCTA, WO 3be 25:100 with the percentage by weight of TCTA, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 30nm on the surface, material used is TCTA, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, vacuum evaporation technology is adopted to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 10nm on the surface, material used is that PQIr is entrained in the mixed luminescence material formed in mCP, be expressed as PQIr:mCP, the percentage by weight of PQIr and mCP is 2:100, and evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 10nm on the surface, material used is BCP, and evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, vacuum evaporation technology is adopted to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 20nm on the surface, material used is that CsF is entrained in the mixed electronic material formed in BCP, be expressed as CsF:BCP, the percentage by weight of CsF and BCP is 25:100, and evaporation rate used is
The preparation of (h) cathode layer 108:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 50nm on the surface, material used is metal A l, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Embodiment 3
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/V 2o 5: CBP (35:100)/V 2o 5: CBP (35:100)/CBP/ (fbi) 2ir (acac): CBP (1:100)/BAlq/CsN 3: BAlq (35:100)/Au, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 100nm;
(b) first preparation of hole injection layer 102:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 15nm on the surface, material used is V 2o 5be entrained in the hybrid holes material formed in CBP, be expressed as V 2o 5: CBP, V 2o 5be 35:100 with the percentage by weight of CBP, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 15nm on the surface, material used is V 2o 5be entrained in the hybrid holes material formed in CBP, be expressed as V 2o 5: CBP, V 2o 5be 35:100 with the percentage by weight of CBP, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 50nm on the surface, material used is CBP, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 30nm on the surface, material used is (fbi) 2ir (acac) is entrained in the mixed luminescence material formed in CBP, is expressed as (fbi) 2ir (acac): CBP, (fbi) 2ir (acac) is 1:100 with the percentage by weight of CBP, and evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 60nm on the surface, material used is BAlq, and evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 40nm on the surface, material used is CsN 3be entrained in the mixed electronic material formed in BAlq, be expressed as CsN 3: BAlq, CsN 3be 35:100 with the percentage by weight of BAlq, evaporation rate used is
The preparation of (h) cathode layer 108:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 200nm on the surface, material used is metal A u, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Embodiment 4
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/ReO 3: TPD (30:100)/ReO 3: TPD (30:100)/TPD/ (F-BT) 2ir (acac): TPD (1.5:100)/Alq 3/ Li 2cO 3: Alq 3(30:100)/Ag, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 100nm;
(b) first preparation of hole injection layer 102:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 13nm on the surface, material used is ReO 3be entrained in the hybrid holes material formed in TPD, be expressed as ReO 3: TPD, ReO 3be 30:100 with the percentage by weight of TPD, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 13nm on the surface, material used is ReO 3be entrained in the hybrid holes material formed in TPD, be expressed as ReO 3: TPD, ReO 3be 30:100 with the percentage by weight of TPD, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 40nm on the surface, material used is TPD, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 20nm on the surface, material used is (F-BT) 2ir (acac) is entrained in the mixed luminescence material formed in TPD, is expressed as (F-BT) 2ir (acac): TPD, (F-BT) 2ir (acac) is 1.5:100 with the percentage by weight of TPD, and evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 30nm on the surface, material used is Alq 3, evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 30nm on the surface, material used is Li 2cO 3be entrained in Alq 3the mixed electronic material of middle formation, is expressed as Li 2cO 3: Alq 3, Li 2cO 3with Alq 3percentage by weight be 30:100, evaporation rate used is
The preparation of (h) cathode layer 108:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 100nm on the surface, material used is metal A g, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Embodiment 5
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/MoO 3: TAPC (25:100)/MoO 3: TAPC (25:100)/TAPC/Ir (btp) 2(acac): TAPC (1.8:100)/TAZ/LiF:TAZ (30:100)/Al, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 100nm;
(b) first preparation of hole injection layer 102:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 10nm on the surface, material used is MoO 3be entrained in the hybrid holes material formed in TAPC, be expressed as MoO 3: TAPC, MoO 3be 25:100 with the percentage by weight of TAPC, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 10nm on the surface, material used is MoO 3be entrained in the hybrid holes material formed in TAPC, be expressed as MoO 3: TAPC, MoO 3be 25:100 with the percentage by weight of TAPC, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 40nm on the surface, material used is TAPC, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 20nm on the surface, material used is Ir (btp) 2(acac) be entrained in the mixed luminescence material formed in TAPC, be expressed as Ir (btp) 2(acac): TAPC, Ir (btp) 2(acac) be 1.8:100 with the percentage by weight of TAPC, evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 50nm on the surface, material used is TAZ, and evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, vacuum evaporation technology is adopted to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 30nm on the surface, material used is that LiF is entrained in the mixed electronic material formed in TAZ, be expressed as LiF:TAZ, the percentage by weight of LiF and TAZ is 30:100, and evaporation rate used is
The preparation of (h) cathode layer 108:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 100nm on the surface, material used is metal A l, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Embodiment 6
As shown in Figure 1, the structure of the organic electroluminescence device of the present embodiment is: ito glass/WO 3: NPB (30:100)/WO 3: NPB (30:100)/NPB/Ir (piq) 3: ADN (1.4:100)/TPBI/Li 2o:TPBI (30:100)/Al, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this embodiment comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 100nm;
(b) first preparation of hole injection layer 102:
Be 1 × 10 in vacuum degree -3p avacuum coating system in, adopt vacuum evaporation technology prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 12nm on the surface, material used is WO 3be entrained in the hybrid holes material formed in NPB, be expressed as WO 3: NPB, WO 3be 30:100 with the percentage by weight of NPB, evaporation rate used is
(c) second preparation of hole injection layer 103:
Be 1 × 10 in vacuum degree -3in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the first hole injection layer 102 the second hole injection layer 103 that a layer thickness is 12nm on the surface, material used is WO 3be entrained in the hybrid holes material formed in NPB, be expressed as WO 3: NPB, WO 3be 30:100 with the percentage by weight of NPB, evaporation rate used is
The preparation of (d) hole transmission layer 104:
Be 1 × 10 in vacuum degree -3in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 40nm on the surface, material used is NPB, and evaporation rate used is
The preparation of (e) red light emitting layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 red light emitting layer 105 that a layer thickness is 20nm on the surface, material used is Ir (piq) 3be entrained in the mixed luminescence material formed in ADN, be expressed as Ir (piq) 3: ADN, Ir (piq) 3be 1.4:100 with the percentage by weight of ADN, evaporation rate used is
The preparation of (f) electron transfer layer 106:
Be 1 × 10 in vacuum degree -3in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at red light emitting layer 105 electron transfer layer 106 that a layer thickness is 30nm on the surface, material used is TPBI, and evaporation rate used is
The preparation of (g) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 30nm on the surface, material used is Li 2o is entrained in the mixed electronic material formed in TPBI, is expressed as Li 2o:TPBI, Li 2the percentage by weight of O and TPBI is 30:100, and evaporation rate used is
The preparation of (h) cathode layer 108:
Be 1 × 10 in vacuum degree -3in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 100nm on the surface, material used is metal A l, and evaporation rate used is
After above-mentioned preparation process completes, obtain above-mentioned organic electroluminescence device 1.
Comparative example 1
Cancel the second hole injection layer 103 of the organic electroluminescence device prepared by embodiment 1 ~ 6, namely the organic electroluminescence device of this comparative example comprises: anode conducting substrate 101, first hole injection layer 102, hole transmission layer 104, luminescent layer 105, electron transfer layer 106, electron injecting layer 107 and cathode layer 108.
The structure of this organic electroluminescence device is: ito glass/V 2o 5: CBP (30:100)/TCTA/Ir (piq) 3: ADN (1:100)/BPhen/Li 2o:TPBI (30:100)/Al, wherein, colon ": " represents that the former is entrained in the latter.
The preparation method of the organic electroluminescence device of this comparative example comprises the following steps:
The pre-treatment of (a) anode conducting substrate 101:
First, using ito glass as anode conducting substrate 101, wherein, the material of substrate 101a is glass, and the material of anode conductive layer 101b is ITO;
Then, antianode electrically-conductive backing plate 101 carries out liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol purge successively, above-mentioned cleaning is all carried out with supersonic wave cleaning machine, every cleaning all adopts first cleans 5 minutes, stop 5 minutes again, the mode repeating 3 times is successively carried out, and it is for subsequent use that cleaning terminates rear oven for drying;
Finally, also need to carry out surface activation process to the ito glass of this cleaning and anode conducting substrate 101, to increase the oxygen content on ITO surface, improve the work function on ITO surface; After completing, acquisition thickness is the anode conducting substrate 101 of 100nm;
(b) first preparation of hole injection layer 102:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at anode conducting substrate 101 the first hole injection layer 102 that a layer thickness is 12nm on the surface, material used is V 2o 5be entrained in the hybrid holes material formed in CBP, be expressed as V 2o 5: CBP, V 2o 5be 30:100 with the percentage by weight of CBP, evaporation rate used is
The preparation of (c) hole transmission layer 104:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at the second hole injection layer 103 hole transmission layer 104 that a layer thickness is 40nm on the surface, material used is TCTA, and evaporation rate used is
The preparation of (d) luminescent layer 105:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at hole transmission layer 104 luminescent layer 105 that a layer thickness is 20nm on the surface, material used is Ir (piq) 3be entrained in the mixed luminescence material formed in ADN, be expressed as Ir (piq) 3: ADN, Ir (piq) 3be 1:100 with the percentage by weight of ADN, evaporation rate used is
The preparation of (e) electron transfer layer 106:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at luminescent layer 105 electron transfer layer 106 that a layer thickness is 40nm on the surface, material used is Bphen, and evaporation rate used is
The preparation of (f) electron injecting layer 107:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron transfer layer 106 electron injecting layer 107 that a layer thickness is 30nm on the surface, material used is Li 2o is entrained in the mixed electronic material formed in TPBI, is expressed as Li 2o:TPBI, Li 2the percentage by weight of O and TPBI is 30:100, and evaporation rate used is
The preparation of (g) cathode layer 108:
Be 5 × 10 in vacuum degree -5in the vacuum coating system of Pa, adopt vacuum evaporation technology to prepare at electron injecting layer 107 cathode layer 108 that a layer thickness is 100nm on the surface, material used is metal A l, and evaporation rate used is
Be 1000cd/m to the organic electroluminescence device prepared by embodiment 1 ~ 6 and comparative example 1 at luminosity 2condition under carry out the test of luminous efficiency, test result is as shown in table 1.
Table 1
As can be seen from Table 1, compared to comparative example 1, the luminous efficiency of the organic electroluminescence device prepared by the present invention increases significantly, and only the luminous efficiency of embodiment 1 just improves 40%.
In sum, organic electroluminescence device of the present invention comprises anode conducting substrate, stacks gradually the first hole injection layer, the second hole injection layer, hole transmission layer, red light emitting layer, electron transfer layer, electron injecting layer and the cathode layer be located on a surface of anode conducting substrate; The material of this first hole injection layer and the second hole injection layer all adopts the hybrid holes material of identical hole mobile material doped p type material composition, and this identical hybrid holes material is more conducive to transmission and the injection in hole; This double-deck hole injection layer all adopts identical doped structure, effectively raises hole and the separative efficiency of electronics on PN junction interface; In addition, the material of red light emitting layer all adopts the mixed luminescence material of material of main part doping ruddiness guest materials composition, the material of hole transmission layer all adopts the hole mobile material that hole injection layer two-layer with this is identical, further increases the luminous efficiency of organic electroluminescence device.The present invention, by arranging the hole injection layer of two-layer identical material, not only increases the efficiency of separation of charge, improves luminous efficiency, and by selecting the p-type material being convenient to vacuum evaporation, reduces the complexity of preparation technology.
Foregoing; be only preferred embodiment of the present invention; not for limiting embodiment of the present invention; those of ordinary skill in the art are according to central scope of the present invention and spirit; can carry out corresponding flexible or amendment very easily, therefore protection scope of the present invention should be as the criterion with the protection range required by claims.

Claims (10)

1. an organic electroluminescence device, it is characterized in that, comprise anode conducting substrate, stack gradually the first hole injection layer, the second hole injection layer, hole transmission layer, red light emitting layer, electron transfer layer, electron injecting layer and the cathode layer be located on a surface of described anode conducting substrate, wherein
Described first hole injection layer is identical with the material of described second hole injection layer, the hybrid holes material of material all for being made up of hole mobile material doped p type material of described first hole injection layer and described second hole injection layer; In described hybrid holes material, the percentage by weight that described p-type material accounts for described hole mobile material is 25wt% ~ 35wt%;
Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine or 1, any one in 1-bis-[4-[N, N'-bis-(p-tolyl) is amino] phenyl] cyclohexane;
Described p-type material is any one in molybdenum trioxide, tungstic acid, vanadic oxide or rhenium trioxide.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described first hole injection layer and described second hole injection layer is 10nm ~ 15nm.
3. organic electroluminescence device according to claim 2, is characterized in that, the material of described hole transmission layer is identical with the described hole mobile material in described hybrid holes material; The thickness of described hole transmission layer is 30nm ~ 50nm.
4. organic electroluminescence device according to claim 1, is characterized in that,
The material of described red light emitting layer is the mixed luminescence material be made up of material of main part doping guest materials; In described mixed luminescence material, the percentage by weight that described guest materials accounts for described material of main part is 0.5wt% ~ 2wt%;
Described material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 9,9'-(1,3-phenyl) two-9H-carbazoles, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine, 1, any one in 1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane or two (1-naphthyl) anthracene of 9,10-;
Described guest materials is two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, two [2-(phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III), two [2-(2-fluorophenyl)-1, 3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close that iridium (III) or three (1-phenyl-isoquinolin) close in iridium any one,
The thickness of described red light emitting layer is 10nm ~ 30nm.
5. organic electroluminescence device according to claim 1, is characterized in that,
The material of described electron injecting layer is the mixed electronic material be made up of electron transport material Doped n-type material; In described mixed electronic material, the percentage by weight that described N-shaped material accounts for described mixed electronic material is 25wt% ~ 35wt%;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phen, 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole or 1, any one in 3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene;
Described N-shaped material is any one in cesium carbonate, cesium fluoride, cesium azide, lithium carbonate, lithium fluoride or lithia;
The material of described electron transfer layer is identical with the described electron transport material in described mixed electronic material;
The thickness of described electron injecting layer is 20nm ~ 40nm;
The thickness of described electron transfer layer is 10nm ~ 60nm.
6. organic electroluminescence device according to claim 1, is characterized in that, the material of described cathode layer is any one in argent, aluminium or gold; The thickness of described cathode layer is 50nm ~ 200nm.
7. organic electroluminescence device according to claim 1, it is characterized in that, described anode conducting substrate comprises substrate and anode conductive layer, wherein, the material of described substrate is glass, the material of described anode conductive layer is tin indium oxide, and the thickness of described anode conducting substrate is 100nm ~ 150nm.
8. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Anode conducting substrate is provided, cleans, for subsequent use after dry, activation processing;
Adopt vacuum evaporation technology, described anode conducting substrate surface stacks gradually evaporation first hole injection layer, the second hole injection layer, hole transmission layer, red light emitting layer, electron transfer layer, electron injecting layer and cathode layer; Wherein,
Described first hole injection layer is identical with the material of described second hole injection layer; The hybrid holes material of material all for being made up of hole mobile material doped p type material of described first hole injection layer and described second hole injection layer; In described hybrid holes material, the percentage by weight that described p-type material accounts for described hole mobile material is 25wt% ~ 35wt%;
Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine or 1, any one in 1-bis-[4-[N, N'-bis-(p-tolyl) is amino] phenyl] cyclohexane;
Described p-type material is any one in molybdenum trioxide, tungstic acid, vanadic oxide or rhenium trioxide;
After above-mentioned preparation process completes, obtain described organic electroluminescence device.
9. the preparation method of organic electroluminescence device according to claim 8, is characterized in that,
The material of described hole transmission layer is identical with the described hole mobile material in described hybrid holes material;
The material of described red light emitting layer is the mixed luminescence material be made up of material of main part doping guest materials; In described mixed luminescence material, the percentage by weight that described guest materials accounts for described material of main part is 0.5wt% ~ 2wt%;
Described material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 9,9'-(1,3-phenyl) two-9H-carbazoles, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine, 1, any one in 1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane or two (1-naphthyl) anthracene of 9,10-;
Described guest materials is two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, two [2-(phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III), two [2-(2-fluorophenyl)-1, 3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close that iridium (III) or three (1-phenyl-isoquinolin) close in iridium any one,
The material of described electron injecting layer is the mixed electronic material be made up of electron transport material Doped n-type material; In described mixed electronic material, the percentage by weight that described N-shaped material accounts for described mixed electronic material is 25wt% ~ 35wt%;
Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phen, 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole or 1, any one in 3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene;
Described N-shaped material is any one in cesium carbonate, cesium fluoride, cesium azide, lithium carbonate, lithium fluoride or lithia;
The material of described electron transfer layer is identical with the described electron transport material in described mixed electronic material;
The material of described cathode layer is any one in argent, aluminium or gold;
Described anode conducting substrate comprises substrate and anode conductive layer, and wherein, the material of described substrate is glass, and the material of described anode conductive layer is tin indium oxide.
10. the preparation method of organic electroluminescence device according to claim 8, is characterized in that, the evaporation rate of described vacuum evaporation technology is vacuum degree is 1 × 10 -5pa ~ 1 × 10 -3pa.
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WO2018184264A1 (en) * 2017-04-05 2018-10-11 武汉华星光电技术有限公司 Processing method of raw material of light-emitting layer in oled and application thereof
US10297795B2 (en) 2017-04-05 2019-05-21 Wuhan China Star Optoelectronics Technology Co., Ltd Treatment method of emitting layer raw material in OLED and application
CN109509840A (en) * 2017-09-14 2019-03-22 上海和辉光电有限公司 A kind of structure of OLED device
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