CN109509840A - A kind of structure of OLED device - Google Patents
A kind of structure of OLED device Download PDFInfo
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- CN109509840A CN109509840A CN201710826900.5A CN201710826900A CN109509840A CN 109509840 A CN109509840 A CN 109509840A CN 201710826900 A CN201710826900 A CN 201710826900A CN 109509840 A CN109509840 A CN 109509840A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
The present embodiments relate to the fields OLED more particularly to a kind of structure of OLED device to increase the service life of OLED device for reducing the aggregation of electronics on target hole transmission layer.In the embodiment of the present invention, OLED device structure, including at least one layer of hole transmission layer, luminescent layer, the electron transfer layer set gradually；The hole transmission layer is set on anode, and the electron transfer layer is set on cathode；There is dopant material in target hole transmission layer；The target transport is that barrier potential difference is greater than barrier threshold and the high hole transmission layer of potential barrier between two neighboring hole transmission layer at least one layer of hole transmission layer；The carrier mobility of the dopant material is greater than mobility threshold.Due to increasing dopant material in target hole transmission layer in the embodiment of the present invention, the electronics on target hole transmission layer interface is drawn into, so that carrier does not assemble electronics on target hole transmission layer.
Description
Technical field
The present embodiments relate to the field OLED more particularly to a kind of structures of OLED device.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, abbreviation OLED) device is to utilize organic half
Conductor converts electrical energy into a kind of organic photoelectric function element of luminous energy as luminescent material, and the structure of device generally comprises
Anode, hole transmission layer, luminescent layer, electron transfer layer, cathode.When the both ends of device apply positive bias, hole and electricity
Son injects organic luminous layer, and transmits in organic luminous layer, hole and electricity from anode, cathode respectively under the driving of voltage
Son meets in organic luminous layer, is compound, releasing energy, the energy by the molecule of the organic luminescent substance in organic luminous layer, from
Ground state is energized into excitation state, and excitation state is very unstable, and the molecule being stimulated can return to ground state from excitation state, and radiation transistion generates
It shines.
Hole and electron injection amount is required to balance in electroluminescent as far as possible；Otherwise the compound several of carrier can not only be reduced
Rate；And through current can be generated between organic layer, cause OLED device to generate heat and shorten the OLED device service life.In order to improve
The performance of OLED device, the carrier concentration in balancing device is in the prior art between cathode and organic layer or in sun
Increase by one layer of padded coaming between pole and organic layer.Common cathode buffer layer is generally LiF between cathode and organic layer, can
To effectively improve the performance of OLED device.But such devices performance superiority and inferiority is very harsh to LiF film layer thickness requirement, generally
The thickness control of LiF requires preparation process extremely stringent in 0.5nm, is not easy to realize.
Summary of the invention
The embodiment of the present invention provides a kind of structure of OLED device, to solve in the prior art carrier in hole transport
The problem of bed boundary aggregation causes the OLED device service life to reduce.
The embodiment of the invention provides a kind of structures of OLED device, comprising: at least one layer of hole transport set gradually
Layer, luminescent layer, electron transfer layer；The hole transmission layer is set on anode, and the electron transfer layer is set on cathode；Mesh
Marking has dopant material in hole transmission layer；The target transport is two neighboring sky at least one layer of hole transmission layer
Barrier potential difference is greater than barrier threshold and the high hole transmission layer of potential barrier between the transport layer of cave；The carrier mobility of the dopant material
Rate is greater than mobility threshold.
Optionally, thickness accounting of the dopant material in the target hole transmission layer is 1% to 15%.
Optionally, thickness accounting of the dopant material in the target hole transmission layer is 1% to 3%.
Optionally, the dopant material is p-type organic material.
Optionally, the carrier mobility of the dopant material is greater than 10-3cm2/VS。
Optionally, the LUMO potential barrier range of the dopant material is -5eV ∽ -5.5eV；HOMO potential barrier range is -7eV ∽ -
9eV。
Optionally, the dopant material includes any one of following: 2,3,5,6- tetra- fluoro- 7,7', 8,8'- tetra- cyanogen dimethyl pair
Benzoquinones, 7,7,8,8- four cyano benzoquinone bismethane, pyrazolo [2,3-F] [1,10] phenanthrene quinoline -2,3- dintrile, dark green, oxygen
Titanium phthalocyanines, six cyano -1,4,5,8,9,12- of 2,3,6,7,10,11-, six azepine benzophenanthrene.
Optionally, at least one layer of hole transmission layer includes the first hole transmission layer and the second hole transmission layer；It is described
Hole injection layer is additionally provided between first hole transmission layer and the anode；First hole transmission layer and the hole are infused
It is adjacent to enter layer, second hole transmission layer is set between first hole transmission layer and the luminescent layer；The doping
It is material doped in first hole transmission layer.
Optionally, first hole transmission layer includes main material and dopant material；The LUMO potential barrier model of the main material
It encloses for -2eV ∽ -3eV；HOMO potential barrier range is -5eV ∽ -6eV, and the main material is little to the range of the mobility of carrier
In 10-4cm2/VS。
Due to the potential barrier in the embodiment of the present invention, between hole transmission layer two neighboring at least one layer of hole transmission layer
When difference is greater than barrier threshold, carrier can be assembled on the interface of the high hole transmission layer of potential barrier；With persistently lighting, carrier
Assemble on the high interface of potential barrier it is more and more, in this way, will lead to OLED driving voltage increase, and then influence OLED device
Service life.In the embodiment of the present invention, by increasing dopant material in the high hole transmission layer of potential barrier, due to the dopant material pair
Therefore the mobility of carrier, which is greater than mobility threshold, can be drawn into this for the electronics on the high hole transport bed boundary of potential barrier
The high hole transmission layer of potential barrier so that carrier does not assemble electronics on target hole transmission layer, and then will not influence drive
Dynamic voltage, increases the service life of OLED device.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is the schematic arrangement of six kinds of dopant materials provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of OLED device provided in an embodiment of the present invention；
Fig. 3 is that one kind provided in an embodiment of the present invention increases dopant material in the first hole transmission layer and do not increase doping material
The experimental data comparison diagram of material.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that the described embodiments are only some of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
In general, mature anode is to be mostly inorganic matter, interface potential barrier meeting larger with the performance difference of light emitting layer material
Cause the raising of the driving voltage of OLED device；In order to improve the stability of OLED device, power consumption is reduced, driving voltage is reduced
Raising is very important.
A kind of structure of OLED device is provided in the embodiment of the present invention, including at least one layer of hole transport set gradually
Layer, luminescent layer, electron transfer layer；The hole transmission layer is set on anode, and the electron transfer layer is set on cathode；Mesh
Marking has dopant material in hole transmission layer；The target transport is two neighboring sky at least one layer of hole transmission layer
Barrier potential difference is greater than barrier threshold and the high hole transmission layer of potential barrier between the transport layer of cave；The carrier mobility of the dopant material
Rate is greater than mobility threshold.
Due to the potential barrier in the embodiment of the present invention, between hole transmission layer two neighboring at least one layer of hole transmission layer
When difference is greater than barrier threshold, carrier can be assembled on the interface of the high hole transmission layer of potential barrier；With persistently lighting, carrier
Assemble on the high interface of potential barrier it is more and more, in this way, will lead to OLED driving voltage increase, and then influence OLED device
Service life.In the embodiment of the present invention, by increasing dopant material in the high hole transmission layer of potential barrier, due to the dopant material pair
Therefore the mobility of carrier, which is greater than mobility threshold, can be drawn into this for the electronics on the high hole transport bed boundary of potential barrier
The high hole transmission layer of potential barrier so that carrier does not assemble electronics on target hole transmission layer, and then will not influence drive
Dynamic voltage, so that the service life of OLED device is unaffected.
In the embodiment of the present invention, luminescent layer is injected by carrier, realizes shining for OLED device.The injection of carrier is imitated
What rate directly affected OLED device opens bright voltage, luminous efficiency and service life.Due to the work function and organic material of positive and negative electrode
Molecular orbital energy level mismatch, there are energy level difference, cause to form interface potential barrier between organic layer and electrode.Therefore, electronics and
Hole is injected into luminescent layer and needs to overcome interface potential barrier, can just be injected into and shine layer by layer.
Optionally, at least one layer of hole transmission layer is provided between luminescent layer and anode；Between luminescent layer and cathode
Provided with electron transfer layer.This is because most of organic materials are not that have the property of transporting holes be exactly with transmission electronics
Property, but have the organic material in impartial hole and electronic transport property few simultaneously.Therefore, in order to effectively solve electricity
Son and hole-recombination area far from electrode and balance Carrier Injection Efficiency the problem of, the luminous efficiency of OLED is improved, using successively
The OLED device structure of the anode of setting, at least one layer of hole transmission layer, luminescent layer, electron transfer layer, cathode.
In order to further increase performance, in the embodiment of the present invention, hole can be increased between anode and hole transmission layer
Implanted layer.The effect of hole injection layer is to receive hole from anode to inject and make its transmission, and hole injection layer can reduce device
The driving voltage of part.The highest occupied molecular orbital potential barrier and the close material of anode work function number of the material of hole injection layer.Cause
This, hole injection layer can be used as buffer layer, reduce the interface potential barrier between anode and hole transmission layer, and the reduction of potential barrier can be with
The injectability for greatly improving hole improves the luminescent properties of OLED device；On the other hand, when anode is ito glass, hole
There are also increase hole transmission layer and bondability of the ito glass as anode for the introducing of implanted layer.In order to further improve device
Performance can also introduce one layer of electron injecting layer between cathode layer and electron transfer layer, improve the injectability of electronics.
In the embodiment of the present invention, after increasing hole injection layer in OLED device, the effect of hole transmission layer be from
Hole injection layer is to luminescent layer transporting holes.Since hole transmission layer is in contact with luminescent layer, hole transmission layer and hole
Implanted layer, which is compared, different requirements.Particular/special requirement to hole transmission layer is that it cannot be because of intermolecular between luminescent layer
Interaction and form excitation misfit object, charge transmission chelate etc..With hole injection layer on the contrary, to avoid this wrong (chela)
Close the formation of object, it is desirable to which hole transmission layer selects the higher material of energy level.Further, hole transmission layer and luminous boundary in order to prevent
To hole transmission layer energy movement occurs for the exciton of the generation near face, and the singlet state excitation energy of hole transmission layer is also required to answer
It is higher than the exciton energy of luminescent layer.Therefore, to guarantee that hole transmission layer does not absorb shining for luminescent layer, energy does not occur and moves
It moves, require it that there is wide energy gap characteristic, is i.e. the potential barrier of hole transmission layer is higher.Optionally, the material multiselect of hole transmission layer
Benzidine derivatives such as TPD, a-NPD etc..
Optionally, in the selection of anode material, anode material itself necessarily has high work function, to improve hole
Injection efficiency, and want light-permeable.So having the ITO of the high work function of 4.5eV-5.3eV, property stabilization and light transmission to be answered extensively
For anode.ITO in the wave-length coverage of 400nm-1000nm transmitance up to 80% or more, and near ultraviolet band also have it is very high
Transmissivity.If anode is according to ITO electrode, hole injection layer should select the material that potential barrier is about 5.0ev or so.For example,
2-TNATA。
In the embodiment of the present invention, for cathode in order to increase the luminous efficiency of device, the injection of electronics usually requires low work function
The metals such as Ag, Al, Ca, In, Li and Mg or the composition metal of low work function make cathode；Such as: Mg-Ag magnesium silver.
Due to the difference between layer potential barrier each in OLED, when the potential barrier of a certain layer is higher compared with the potential barrier of adjacent layer,
It will appear carrier to assemble on the interface of this layer, the aggregation of carrier will lead to the variation of driving voltage, and then influence OLED
Service life.In the embodiment of the present invention, by increasing dopant material in target transport, and then reduces carrier and passed in target
The aggregation at interface on defeated layer.Thickness accounting of the dopant material in the target hole transmission layer is 1% to 15%.It is optional
Ground can both make target empty when thickness accounting of the dopant material in the target hole transmission layer is 1% to 3%
Carrier on the transmission bed boundary of cave is not assembled, and can guarantee that the luminous efficiency of luminescent layer is higher；I.e. under the doping ratio,
The optical property and electric property of OLED device are preferable.
In the embodiment of the present invention, in target hole transmission layer include main material and dopant material, main material and doping material
The shape by way of vapor deposition.
Optionally, the dopant material is p-type organic material.
Optionally, the LUMO potential barrier range of the dopant material is -5eV ∽ -5.5eV；HOMO potential barrier range is -7eV ∽ -
9eV。
Optionally, the dopant material includes any one of following: 2,3,5,6- tetra- fluoro- 7,7', 8,8'- tetra- cyanogen dimethyl pair
Benzoquinones, 7,7,8,8- four cyano benzoquinone bismethane, pyrazolo [2,3-F] [1,10] ferrosin -2,3- dintrile, dark green,
Titanyl phthalocyanine, six cyano -1,4,5,8,9,12- of 2,3,6,7,10,11-, six azepine benzophenanthrene.Optionally, Fig. 1 shows application
The schematic arrangement of six kinds of dopant materials of the embodiment of the present invention.As described in Figure 1, (a) in Fig. 1 is 2,3,5,6- tetra-
The molecular structure of fluoro- 7,7', 8,8'- tetra- cyanogen dimethyl-parabenzoquinones, referred to as are as follows: F4TCNQ；(b) in Fig. 1 is 7,7,8,8- tetra-
Cyano benzoquinone's bismethane molecular structure, referred to as TCNQ；(c) in Fig. 1 is pyrazolo [2,3-F] [1,10] ferrosin-
The molecular structure of 2,3- dintrile, referred to as PPDN；(d) in Fig. 1 is the molecular structure of dark green, referred to as CuPC；In Fig. 1
It (e) is the molecular structure of titanyl phthalocyanine, referred to as TiOPC；(f) in Fig. 1 is six cyano -1,4,5,8 2,3,6,7,10,11-,
The molecular structure of 9,12- six azepine benzophenanthrenes, referred to as HAT-CN.
In order to make it easy to understand, Fig. 2 shows a kind of structural schematic diagrams of OLED device of the application embodiment of the present invention.Such as figure
Shown in 2, the OLED device includes anode, hole injection layer, the first hole transmission layer, the second hole transmission layer, luminescent layer, electricity
Sub- implanted layer, cathode；Hole injection layer is additionally provided between first hole transmission layer and the anode；First hole
Transport layer is adjacent with the hole injection layer, and second hole transmission layer is set to first hole transmission layer and the hair
Between photosphere；First hole transmission layer includes main material and dopant material；The LUMO potential barrier range of the main material be-
2eV∽-3eV；HOMO potential barrier range is -5eV ∽ -6eV, as shown in Figure 1, the potential barrier of the first hole transmission layer is higher than described second
Hole transmission layer, and the barrier potential difference between first hole transmission layer and second hole transmission layer is greater than barrier threshold,
The dopant material is doped in first hole transmission layer；Wherein, the main material to the range of the mobility of carrier not
Greater than 10-4cm2The carrier mobility of/VS, the dopant material are greater than 10-3cm2/VS。
Since the barrier potential difference between the potential barrier and the second hole transmission layer of the first hole transmission layer is greater than barrier threshold.Cause
This, electronics is easy the interface aggregates in the first transport layer；By increasing doping material in the first transport layer in the embodiment of the present invention
Material can be added since mobility of the dopant material to carrier is much larger than the first transport layer main material to the mobility of electronics
Electronics on first transmission bed boundary can be drawn into the first transport layer by the first transport layer of dopant material；Reduce first
Transmission bed boundary powers on the aggregation of son.
It is 1% to 3% that thickness accounting of the dopant material in the first hole transmission layer is provided in the embodiment of the present invention
Comparative experimental data.It, will not be to OLED device when thickness accounting is 1% to 3% to dopant material in the first hole transmission layer
I-V performance have any negative effect.
Fig. 3, which is provided, to be increased dopant material in the first hole transmission layer and not to increase the experimental data comparison of dopant material
Figure；As shown in figure 3, the first hole transmission layer is when increasing dopant material, lighting time continues to increase therewith, driving voltage
It is significantly increasing, the increase of the driving voltage is to make because having accumulated a large amount of electronics on the interface of the first hole transmission layer
At.When injecting the dopant material of various concentration in the first hole transmission layer, the increase of driving voltage is substantially zeroed；Cause
This, by comparative experimental data, may further determine that it is described in the first hole transmission layer can plus when dopant material, can subtract
The aggregation of electronics on small first hole transmission layer.
It can be seen from the above: in the embodiment of the present invention, due in the embodiment of the present invention, when at least one layer of hole passes
It, can be on the boundary of the high hole transmission layer of potential barrier when barrier potential difference in defeated layer between two neighboring hole transmission layer is greater than barrier threshold
Assemble carrier on face；With persistently lighting, carrier is assembled more and more on the high interface of potential barrier.In this way, will lead to
The driving voltage of OLED increases, and then influences the service life of OLED device.In the embodiment of the present invention, by being passed in the high hole of potential barrier
Increase dopant material in defeated layer, since mobility of the dopant material to carrier is greater than mobility threshold, can be by gesture
It builds the electronics on high hole transport bed boundary and is drawn into the high hole transmission layer of the potential barrier, so that carrier is not in target empty
Assemble electronics in the transport layer of cave, and then will not influence driving voltage, increases the service life of OLED device.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method or computer program product.
Therefore, complete hardware embodiment, complete software embodiment or embodiment combining software and hardware aspects can be used in the present invention
Form.It is deposited moreover, the present invention can be used to can be used in the computer that one or more wherein includes computer usable program code
The shape for the computer program product implemented on storage media (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
Formula.
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of structure of OLED device characterized by comprising
At least one layer of hole transmission layer, luminescent layer, the electron transfer layer set gradually；The hole transmission layer is set to anode
On, the electron transfer layer is set on cathode；
There is dopant material in target hole transmission layer；The target transport is adjacent at least one layer of hole transmission layer
Barrier potential difference is greater than barrier threshold and the high hole transmission layer of potential barrier between two hole transmission layers；The current-carrying of the dopant material
Transport factor is greater than mobility threshold.
2. structure as described in claim 1, which is characterized in that thickness of the dopant material in the target hole transmission layer
Spending accounting is 1% to 15%.
3. structure as described in claim 1, which is characterized in that thickness of the dopant material in the target hole transmission layer
Spending accounting is 1% to 3%.
4. structure as described in claim 1, which is characterized in that the dopant material is p-type organic material.
5. structure as described in claim 1, which is characterized in that the carrier mobility of the dopant material is greater than 10-3cm2/
VS。
6. structure as described in claim 1, which is characterized in that the lumo energy range of the dopant material is -5eV ∽ -
5.5eV；HOMO energy level range is -7eV ∽ -9eV.
7. structure as described in claim 1, which is characterized in that the dopant material includes any one of the following contents:
Tetra- cyanogen dimethyl-parabenzoquinone of 2,3,5,6- tetra- fluoro- 7,7', 8,8'-, 7,7,8,8- four cyano benzoquinone bismethane, pyrazoles
And [2,3-F] [1,10] phenanthrene quinoline -2,3- dintrile, dark green, titanyl phthalocyanine, six cyano -1,4,5,8,9 2,3,6,7,10,11-,
Six azepine benzophenanthrene of 12-.
8. structure as described in any one of claim 1 to 7, which is characterized in that at least one layer hole transmission layer includes the
One hole transmission layer and the second hole transmission layer；
Hole injection layer is additionally provided between first hole transmission layer and the anode；First hole transmission layer and institute
It is adjacent to state hole injection layer, second hole transmission layer is set between first hole transmission layer and the luminescent layer；
The dopant material is doped in first hole transmission layer.
9. structure as claimed in claim 8, which is characterized in that first hole transmission layer includes main material and doping material
Material；
The lumo energy range of the main material is -2eV ∽ -3eV；HOMO energy level range is -5eV ∽ -6eV, the main material
10 are not more than to the range of the mobility of carrier-4cm2/VS。
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Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070231596A1 (en) * | 2006-03-30 | 2007-10-04 | Eastman Kodak Company | OLED device with improved efficiency and lifetime |
| CN101635332A (en) * | 2008-07-22 | 2010-01-27 | 厦门市东林电子有限公司 | P-type doped organic film prepared by wet method and electroluminescent device provided with same |
| CN102201540A (en) * | 2010-12-31 | 2011-09-28 | 友达光电股份有限公司 | Organic electroluminescent element |
| CN102214801A (en) * | 2011-06-09 | 2011-10-12 | 河北工业大学 | Organic light-emitting diode of double P-type doped layer |
| CN202145468U (en) * | 2011-05-06 | 2012-02-15 | 京东方科技集团股份有限公司 | Flexible organic electroluminescent device |
| CN102738414A (en) * | 2012-06-29 | 2012-10-17 | 中国科学院长春应用化学研究所 | Blue-ray fluorescent organic light emitting diode and manufacturing method thereof |
| CN102931355A (en) * | 2012-11-09 | 2013-02-13 | 四川虹视显示技术有限公司 | Organic light emitting diode (OLED) device |
| CN103280534A (en) * | 2013-05-20 | 2013-09-04 | 桂林电子科技大学 | Doping type double-hole transport layer-based high-efficiency and low-voltage organic electroluminescence device |
| CN103915477A (en) * | 2012-12-28 | 2014-07-09 | 乐金显示有限公司 | Organic Light Emitting Display Device and Method of Fabricating the Same |
| CN103915570A (en) * | 2012-12-28 | 2014-07-09 | 乐金显示有限公司 | Organic light emitting display device |
| CN104183736A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device and manufacturing method thereof |
| CN104241540A (en) * | 2014-09-04 | 2014-12-24 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, manufacturing method thereof and display unit |
| CN104377309A (en) * | 2014-10-14 | 2015-02-25 | 天津理工大学 | Low-voltage organic electroluminescent blue light emitting device and preparation method thereof |
| CN104882546A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN105470404A (en) * | 2015-11-23 | 2016-04-06 | 北京大学 | Energy-saving and environment-friendly organic light-emitting element |
| CN107112429A (en) * | 2015-01-06 | 2017-08-29 | 保土谷化学工业株式会社 | Organic electroluminescence device |
-
2017
- 2017-09-14 CN CN201710826900.5A patent/CN109509840A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070231596A1 (en) * | 2006-03-30 | 2007-10-04 | Eastman Kodak Company | OLED device with improved efficiency and lifetime |
| CN101635332A (en) * | 2008-07-22 | 2010-01-27 | 厦门市东林电子有限公司 | P-type doped organic film prepared by wet method and electroluminescent device provided with same |
| CN102201540A (en) * | 2010-12-31 | 2011-09-28 | 友达光电股份有限公司 | Organic electroluminescent element |
| CN202145468U (en) * | 2011-05-06 | 2012-02-15 | 京东方科技集团股份有限公司 | Flexible organic electroluminescent device |
| CN102214801A (en) * | 2011-06-09 | 2011-10-12 | 河北工业大学 | Organic light-emitting diode of double P-type doped layer |
| CN102738414A (en) * | 2012-06-29 | 2012-10-17 | 中国科学院长春应用化学研究所 | Blue-ray fluorescent organic light emitting diode and manufacturing method thereof |
| CN102931355A (en) * | 2012-11-09 | 2013-02-13 | 四川虹视显示技术有限公司 | Organic light emitting diode (OLED) device |
| CN103915477A (en) * | 2012-12-28 | 2014-07-09 | 乐金显示有限公司 | Organic Light Emitting Display Device and Method of Fabricating the Same |
| CN103915570A (en) * | 2012-12-28 | 2014-07-09 | 乐金显示有限公司 | Organic light emitting display device |
| CN103280534A (en) * | 2013-05-20 | 2013-09-04 | 桂林电子科技大学 | Doping type double-hole transport layer-based high-efficiency and low-voltage organic electroluminescence device |
| CN104183736A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emitting device and manufacturing method thereof |
| CN104882546A (en) * | 2014-02-28 | 2015-09-02 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104241540A (en) * | 2014-09-04 | 2014-12-24 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, manufacturing method thereof and display unit |
| CN104377309A (en) * | 2014-10-14 | 2015-02-25 | 天津理工大学 | Low-voltage organic electroluminescent blue light emitting device and preparation method thereof |
| CN107112429A (en) * | 2015-01-06 | 2017-08-29 | 保土谷化学工业株式会社 | Organic electroluminescence device |
| CN105470404A (en) * | 2015-11-23 | 2016-04-06 | 北京大学 | Energy-saving and environment-friendly organic light-emitting element |
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