CN103633247A - White light organic electroluminescent device and preparation method thereof - Google Patents

Abstract

The invention discloses a white light organic electroluminescent device with a structure comprising a conductive substrate, a first hole injection layer, a first hole transmission layer, a blue light-emitting layer, a first electron transmission layer, a charge generation layer, a second hole injection layer, a second hole transmission layer, a red and green light-emitting layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The material of the blue light-emitting layer is a blue light subject material doped with a blue light object material and a bipolar charger control material. With doping of the bipolar charger control material, current of the white light organic electroluminescent device is lowered and blue light emission efficiency is enhanced. Compared with conventional white light organic electroluminescent devices, the white light organic electroluminescent device is higher in light emission efficiency. The invention also provides a preparation method of the aforementioned white light organic electroluminescent device.

Description

White light organic electroluminescent device and preparation method thereof

Technical field

The present invention relates to organic electroluminescent field, relate in particular to a kind of white light organic electroluminescent device and preparation method thereof.

Background technology

Organic electroluminescence device, also referred to as Organic Light Emitting Diode (OLED), is a kind of device that electric energy is converted into luminous energy.1987, C.W.Tang and partner thereof are first by hole mobile material N, N '-diphenyl N, N '-bis-(3 tolyl)-4,4-' benzidine as hole transmission layer, there is electron transport ability oxine aluminium as electron transfer layer and luminescent layer, made and there is double-deck little molecule organic electroluminescent device.

Organic electroluminescence device (OLED) has advantages of that some are unique: (1) OLED belongs to diffused area source, does not need by extra light-conducting system, to obtain large-area white light source as light-emitting diode (LED); (2) due to the diversity of luminous organic material, OLED illumination is the light of design color as required, no matter be little Molecule OLEDs at present, or polymer organic LED (PLED) has all obtained and has comprised white-light spectrum at the light of interior all colours; (3) OLED can make on as glass, pottery, metal, plastic or other material at multiple substrate, freer when this makes to design lighting source; (4) adopt the mode of making OLED demonstration to make OLED illumination panel, can in illumination, show information; (5) OLED also can be used as controlled look in illuminator, allows user to regulate light atmosphere according to individual demand.

White light organic electroluminescent device is typically provided with two luminescent layers, i.e. blue light-emitting and red and green luminous layer.In the blue light-emitting of traditional white light organic electroluminescent device, the transmittability of charge carrier is lower, thereby has reduced its luminous efficiency.

Summary of the invention

Based on this, be necessary to provide white light organic electroluminescent device that a kind of luminous efficiency is higher and preparation method thereof.

A white light organic electroluminescent device, comprises the following structure stacking gradually: conductive substrates, the first hole injection layer, the first hole transmission layer, blue light-emitting, the first electron transfer layer, charge generation layer, the second hole injection layer, the second hole transmission layer, red and green luminous layer, the second electron transfer layer, electron injecting layer and negative electrode;

The material of described blue light-emitting is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

In one embodiment, described bipolarity charge control material is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

In one embodiment, described Blue-light emitting host material is 4,4'-bis-(9-carbazole) biphenyl, 9,9'-(1,3-phenyl) two-9H-carbazole, 9-(4-2-methyl-2-phenylpropane base)-3, two (triphenyl the silicon)-9H-carbazoles, 2 of 6-, two (3-(9H-carbazole-9-yl) phenyl) pyridines, 3 of 6-, two (3-(9H-carbazole-9-yl) phenyl) pyridine and the Isosorbide-5-Nitraes of 5---at least one in two (triphenyl silicon) benzene;

Described blue light guest materials is two (4,6-difluorophenyl pyridine-N, C ²) pyridine formyl closes iridium, two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, three (2-(4', the fluoro-5 '-cyano group of 6'-bis-) phenylpyridine-N, C2') close iridium, two (4,6-difluorophenyl pyridine)-(3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2,4-triazole) close iridium and two (4,6-difluorophenyl pyridine) (5-(pyridine-2-yl)-tetrazoliums) close iridium) at least one.

In one embodiment, described blue light guest materials account for described blue light-emitting gross mass mass percent 5% ~ 20%;

Described bipolarity charge control material account for described blue light-emitting gross mass mass percent 5% ~ 10%;

The thickness of described blue light-emitting is 5nm ~ 15nm.

In one embodiment, the material of described charge generation layer is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one;

The thickness of described charge generation layer is 5nm ~ 30nm.

In one embodiment, the material of described red and green luminous layer is the red green material of main part of ruddiness guest materials and green glow guest materials of having adulterated;

Described red green material of main part is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine, 9,9'-(1; 3-phenyl) two-9H-carbazole, 4; 4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4; 4'-benzidine, 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane) and two (1-naphthyl) anthracenes of 9,10-at least one;

Ruddiness guest materials is two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, two [2-phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanedione) close iridium (III), two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanedione) and close iridium (III) and three (1-phenyl-isoquinolin) and close at least one in iridium;

Green glow guest materials is that three (2-phenylpyridines) close iridium, acetopyruvic acid two (2-phenylpyridine) iridium and three [2-(p-methylphenyl) pyridine] closes at least one in iridium (III).

In one embodiment, described ruddiness guest materials account for described red and green luminous layer gross mass mass percent 0.5% ~ 2%;

Described green glow guest materials account for described red and green luminous layer gross mass mass percent 2% ~ 10%;

Thickness 10nm ~ the 30nm of described red and green luminous layer.

In one embodiment, the material of described the first hole injection layer is the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one hole mobile material;

Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine, 4; 4'-bis-(9-carbazole) biphenyl, N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane;

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for described the first hole injection layer gross mass mass percent 25% ~ 35%;

The thickness of described the first hole injection layer is 10nm ~ 15nm;

The material of described the second hole injection layer is the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one described hole mobile material;

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for described the second hole injection layer gross mass mass percent 25% ~ 35%;

The thickness of described the second hole injection layer is 10nm ~ 15nm.

In one embodiment, the material of described electron injecting layer is the Cs that adulterated ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂the electron transport material of at least one in O;

Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phen, 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole and 1, at least one in 3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene;

Cs ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂o account for described electron injecting layer gross mass mass percent 25% ~ 35%;

The thickness of described electron injecting layer is 20nm ~ 40nm.

A preparation method for white light organic electroluminescent device, comprises the steps:

Clean conductive substrates is provided;

In described conductive substrates, evaporation forms the first hole injection layer, the first hole transmission layer, blue light-emitting, the first electron transfer layer, charge generation layer, the second hole injection layer, the second hole transmission layer, red and green luminous layer, the second electron transfer layer, electron injecting layer and negative electrode successively; Wherein, the material of described blue light-emitting is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

The material of the blue light-emitting of this white light organic electroluminescent device is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated, the doping of bipolarity charge control material reduces the electric current of white light organic electroluminescent device, improve blue light luminous efficiency, and then improve the luminous efficiency of white light organic electroluminescent device.This white light organic electroluminescent device, with respect to traditional white light organic electroluminescent device, luminous efficiency is higher.

Accompanying drawing explanation

Fig. 1 is the structural representation of the white light organic electroluminescent device of an execution mode;

Fig. 2 is preparation method's the flow chart of the white light organic electroluminescent device of an execution mode;

Fig. 3 is the luminous efficiency figure of the white light organic electroluminescent device of embodiment 1 ~ embodiment 7 preparations.

Embodiment

For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public concrete enforcement.

A kind of white light organic electroluminescent device of an execution mode as shown in Figure 1, comprises the following structure stacking gradually: conductive substrates 10, the first hole injection layer 15, the first hole transmission layer 25, blue light-emitting 30, the first electron transfer layer 35, charge generation layer 40, the second hole injection layer 45, the second hole transmission layer 55, red and green luminous layer the 60, second electron transfer layer 65, electron injecting layer 70 and negative electrode 80.

Conductive substrates 10 can be selected ito glass substrate, and the thickness of ITO can be 100nm ~ 150nm.

The material of the first hole injection layer 15 can be the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one electron transport material.

Electron transport material can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for the first hole injection layer 15 gross mass mass percent 25% ~ 35%.

The thickness of the first hole injection layer 15 can be 10nm ~ 15nm.

The material of the first hole transmission layer 25 can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

The thickness of the first hole transmission layer 25 can 30nm ~ 50nm.

The material of blue light-emitting 30 is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

Bipolarity charge control material, for both producing hole, can produce again the material of electronics.

The material of blue light-emitting 30 is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated, the doping of bipolarity charge control material reduces device current, improve blue light luminous efficiency, and then the luminous efficiency of raising device, with respect to traditional white light organic electroluminescent device, luminous efficiency is higher.

In addition, the reduction of device current has also extended the life-span of device.

Blue-light emitting host material can be CBP(4,4'-bis-(9-carbazole) biphenyl), mCP(9,9'-(1,3-phenyl) two-9H-carbazole), CzSi(9-(4-2-methyl-2-phenylpropane base)-3, two (triphenyl the silicon)-9H-carbazoles of 6-), 26DCzPPY(2, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 6-), 35DCzPPY(3, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 5-) and UGH2(1, at least one two (triphenyl silicon) benzene of 4--).

Blue light guest materials can be FIrpic(two (4,6-difluorophenyl pyridine-N, C ²) pyridine formyl closes iridium), FIr6(two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium), FCNIr(tri-(2-(4', the fluoro-5 '-cyano group of 6'-bis-) phenylpyridine-N, C2') close iridium), FIrtaz(two (4,6-difluorophenyl pyridine)-(3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2,4-triazole) close iridium) and two (4,6-difluorophenyl pyridine) (5-(pyridine-2-yl)-tetrazoliums) of FIrN4(close iridium) at least one.

Bipolarity charge control material can be MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

Blue light guest materials account for blue light-emitting 30 gross mass mass percent 5% ~ 20%.

Bipolarity charge control material account for blue light-emitting 30 gross mass mass percent 5% ~ 10%.

The thickness of blue light-emitting 30 can be 5nm ~ 15nm.

The material of the first electron transfer layer 35 can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

The thickness of the first electron transfer layer 35 can be 10nm ~ 60nm.

The material of charge generation layer 40 is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

The thickness of charge generation layer 40 is 5nm ~ 30nm.

The material of the second hole injection layer 45 can be the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one electron transport material.

Electron transport material can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for the second hole injection layer 45 gross mass mass percent 25% ~ 35%.

The thickness of the second hole injection layer 45 can be 10nm ~ 15nm.

The material of the second hole transmission layer 55 can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

The thickness of the second hole transmission layer 55 can 30nm ~ 50nm.

The material of red and green luminous layer 60 is the red green material of main part of ruddiness guest materials and green glow guest materials of having adulterated.

Red green material of main part can be TCTA(4,4', 4 " tri-(carbazole-9-yl) triphenylamine), mCP(9,9'-(1; 3-phenyl) two-9H-carbazole), CBP(4; 4'-bis-(9-carbazole) biphenyl), TPD(N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4; 4'-benzidine), TAPC(1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane) and ADN(9, two (1-naphthyl) anthracenes of 10-) at least one.

Ruddiness guest materials can be Ir (MDQ) ₂(acac) (two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium), PQIr(bis-[2-phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III)), (fbi) ₂ir (acac) (two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III)), (F-BT) ₂ir (acac) (two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III)), Ir (btp) ₂(acac) (two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close iridium (III)) and Ir (piq) ₃at least one of (three (1-phenyl-isoquinolin) close iridium).

Green glow guest materials is Ir (ppy) ₃(three (2-phenylpyridines) close iridium), Ir (ppy) ₂(acac) (acetopyruvic acid two (2-phenylpyridine) iridium) and Ir (mppy) ₃at least one in (three [2-(p-methylphenyl) pyridines] close iridium (III)).

Ruddiness guest materials account for red and green luminous layer 60 gross mass mass percent 0.5% ~ 2%.

Green glow guest materials account for red and green luminous layer 60 gross mass mass percent 2% ~ 10%.

Thickness 10nm ~ the 30nm of red and green luminous layer 60.

The material of the second electron transfer layer 65 can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

The thickness of the second electron transfer layer 65 can be 10nm ~ 60nm.

The material of electron injecting layer 70 is the Cs that adulterated ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂the electron transport material of at least one in O.

Electron transport material can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4, and 7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

Cs ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂o account for electron injecting layer 70 gross mass mass percent 25% ~ 35%.

The thickness of electron injecting layer 70 is 20nm ~ 40nm.

The material of negative electrode 80 can be silver (Ag), aluminium (Al) or gold (Au) etc., and the thickness of negative electrode 80 can be 50nm ~ 200nm.

The material of the blue light-emitting 30 of this white light organic electroluminescent device is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated, the doping of bipolarity charge control material reduces white light organic electroluminescent device electric current, improve blue light luminous efficiency, and then the luminous efficiency of raising white light organic electroluminescent device, and while increasing with brightness, luminous efficiency decay is less, the blue light-emitting that contrasts the bipolarity electric charge key-course that do not adulterate, luminous efficiency improves more than 0.7 times.

In addition, the doping of bipolarity charge control material reduces white light organic electroluminescent device electric current, has also extended the life-span of white light organic electroluminescent device simultaneously.

The preparation method of above-mentioned white light organic electroluminescent device as shown in Figure 2, comprises the steps:

S10, provide clean conductive substrates 10.

Conductive substrates 10 can be selected ito glass substrate, and the thickness of ITO can be 100nm ~ 150nm.

Conductive substrates 10 is carried out liquid detergent cleaning, washed with de-ionized water successively, acetone cleans and ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stops 5 minutes, repeat respectively the method for 3 times, and then stand-by by oven for drying.

Conductive substrates 10 after cleaning can also be carried out surface activation process, to increase the oxygen content on conductive substrates 10 surfaces, improves the work function on conductive substrates 10 surfaces.

In S20, the conductive substrates 10 that obtains at S10, evaporation forms the first hole injection layer 15, the first hole transmission layer 25, blue light-emitting 30, the first electron transfer layer 35, charge generation layer 40, the second hole injection layer 45, the second hole transmission layer 55, red and green luminous layer the 60, second electron transfer layer 65, electron injecting layer 70 and negative electrode 80 successively.

The material of the first hole injection layer 15 can be the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one electron transport material.

Evaporation conditions is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

Electron transport material can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for the first hole injection layer 15 gross mass mass percent 25% ~ 35%.

The formation condition of the first hole injection layer 15 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 10nm ~ 15nm.

The material of the first hole transmission layer 25 can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

The formation condition of the first hole transmission layer 25 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 30nm ~ 50nm.

The material of blue light-emitting 30 is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

The material of blue light-emitting 30 is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated, the doping of bipolarity charge control material reduces device current, improve blue light luminous efficiency, and then the luminous efficiency of raising device, with respect to traditional white light organic electroluminescent device, luminous efficiency is higher.

In addition, the reduction of device current has also extended the life-span of device.

Blue-light emitting host material can be CBP(4,4'-bis-(9-carbazole) biphenyl), mCP(9,9'-(1,3-phenyl) two-9H-carbazole), CzSi(9-(4-2-methyl-2-phenylpropane base)-3, two (triphenyl the silicon)-9H-carbazoles of 6-), 26DCzPPY(2, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 6-), 35DCzPPY(3, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 5-) and UGH2(1, at least one two (triphenyl silicon) benzene of 4--).

Blue light guest materials can be FIrpic(two (4,6-difluorophenyl pyridine-N, C ²) pyridine formyl closes iridium), FIr6(two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium), FCNIr(tri-(2-(4', the fluoro-5 '-cyano group of 6'-bis-) phenylpyridine-N, C2') close iridium), FIrtaz(two (4,6-difluorophenyl pyridine)-(3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2,4-triazole) close iridium) and two (4,6-difluorophenyl pyridine) (5-(pyridine-2-yl)-tetrazoliums) of FIrN4(close iridium) at least one.

Bipolarity charge control material can be MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

Blue light guest materials account for blue light-emitting 30 gross mass mass percent 5% ~ 20%.

Bipolarity charge control material account for blue light-emitting 30 gross mass mass percent 5% ~ 10%.

The formation condition of blue light-emitting 30 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 5nm ~ 15nm.

The material of the first electron transfer layer 35 can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

The formation condition of the first electron transfer layer 35 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 10nm ~ 60nm.

The material of charge generation layer 40 is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

The formation condition of charge generation layer 40 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 5nm ~ 30nm.

The material of the second hole injection layer 45 can be the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one electron transport material.

Electron transport material can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for the second hole injection layer 45 gross mass mass percent 25% ~ 35%.

The formation condition of the second hole injection layer 45 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 10nm ~ 15nm.

The material of the second hole transmission layer 55 can be N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), 4; 4'-bis-(9-carbazole) biphenyl (CBP), N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane (TAPC).

The formation condition of the second hole transmission layer 55 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 30nm ~ 50nm.

The material of red and green luminous layer 60 is the red green material of main part of ruddiness guest materials and green glow guest materials of having adulterated.

Red green material of main part can be TCTA(4,4', 4 " tri-(carbazole-9-yl) triphenylamine), mCP(9,9'-(1; 3-phenyl) two-9H-carbazole), CBP(4; 4'-bis-(9-carbazole) biphenyl), TPD(N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4; 4'-benzidine), TAPC(1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane) and ADN(9, two (1-naphthyl) anthracenes of 10-) at least one.

Ruddiness guest materials can be Ir (MDQ) ₂(acac) (two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium), PQIr(bis-[2-phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III)), (fbi) ₂ir (acac) (two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III)), (F-BT) ₂ir (acac) (two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III)), Ir (btp) ₂(acac) (two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close iridium (III)) and Ir (piq) ₃at least one of (three (1-phenyl-isoquinolin) close iridium).

Green glow guest materials is Ir (ppy) ₃(three (2-phenylpyridines) close iridium), Ir (ppy) ₂(acac) (acetopyruvic acid two (2-phenylpyridine) iridium) and Ir (mppy) ₃at least one in (three [2-(p-methylphenyl) pyridines] close iridium (III)).

Ruddiness guest materials account for red and green luminous layer 60 gross mass mass percent 0.5% ~ 2%.

Green glow guest materials account for red and green luminous layer 60 gross mass mass percent 2% ~ 10%.

The formation condition of red and green luminous layer 60 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate evaporation thickness 10nm ~ 30nm.

The material of the second electron transfer layer 65 can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

The formation condition of the second electron transfer layer 65 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 10nm ~ 60nm.

The material of electron injecting layer 70 is the Cs that adulterated ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂the electron transport material of at least one in O.

Electron transport material can be 4,7-diphenyl-1,10-phenanthroline (Bphen), 4, and 7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, at least one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI).

Cs ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂o account for electron injecting layer 70 gross mass mass percent 25% ~ 35%.

The formation condition of electron injecting layer 70 is: vacuum degree 8 * 10 ^-5pa ~ 3 * 10 ^-4pa, evaporation rate

evaporation thickness 20nm ~ 40nm.

The material of negative electrode 80 can be silver (Ag), aluminium (Al) or gold (Au) etc.

The formation condition of negative electrode 80 is: vacuum degree 8 * 10 ^-5pa～3 * 10 ^-4pa, evaporation rate

evaporation thickness 50nm ~ 200nm.

It is below specific embodiment

Embodiment 1

It is that the ito glass substrate of 150nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the MoO that adulterated ₃n, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), MoO ₃account for the first hole injection layer gross mass mass percent 30%, the thickness of the first hole injection layer of formation is 12.5nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the thickness of the first hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the MoO that adulterated ₃close iridium with two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls of FIrpic() CBP(4,4'-bis-(9-carbazole) biphenyl), MoO ₃account for blue light-emitting gross mass mass percent 7.5%, FIrpic account for blue light-emitting gross mass mass percent 12.5%, the thickness of the blue light-emitting of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), the thickness of the first electron transfer layer of formation is 35nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is MoO ₃, the thickness of the charge generation layer of formation is 17.5nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the MoO that adulterated ₃n, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), MoO ₃the doping content 30% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 12.5nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the thickness of the second hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is the Ir that adulterated (MDQ) ₂(acac) (two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium) and Ir (ppy) ₃the TCTA(4 of (three (2-phenylpyridines) close iridium), 4', 4 " tri-(carbazole-9-yl) triphenylamine), Ir (MDQ) ₂(acac) account for red and green luminous layer gross mass mass percent 1%, Ir (ppy) ₃account for red and green luminous layer gross mass mass percent 6%, the thickness of the red and green luminous layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), the thickness of the second electron transfer layer of formation is 35nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is the Cs that adulterated ₂cO ₃4,7-diphenyl-1,10-phenanthroline (Bphen), Cs ₂cO ₃account for electron injecting layer gross mass mass percent 30%, the thickness 30nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Ag, the thickness of the negative electrode of formation is 125nm.

Embodiment 2

It is that the ito glass substrate of 120nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the WO that adulterated ₃4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), WO ₃account for the first hole injection layer gross mass mass percent 25%, the thickness of the first hole injection layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), the thickness of the first hole transmission layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the V that adulterated ₂o ₅close iridium with two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid of FIr6() mCP(9,9'-(1,3-phenyl) two-9H-carbazole), V ₂o ₅account for blue light-emitting gross mass mass percent 5%, FIr6 account for blue light-emitting gross mass mass percent 5%, the thickness of the blue light-emitting of formation is 5nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is 4,7-diphenyl-1,10-Phen (BCP), the thickness of the first electron transfer layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is V ₂o ₅, the thickness of the charge generation layer of formation is 5nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the WO that adulterated ₃4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), WO ₃the doping content 25% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), the thickness of the second hole transmission layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is closed iridium (III) for the PQIr(bis-that adulterated [2-phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione)) and Ir (ppy) ₂(acac) mCP(9 of (acetopyruvic acid two (2-phenylpyridine) iridium), 9'-(1,3-phenyl) two-9H-carbazole), PQIr account for red and green luminous layer gross mass mass percent 0.5%, Ir (ppy) ₂(acac) account for red and green luminous layer gross mass mass percent 2%, the thickness of the red and green luminous layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is 4,7-diphenyl-1,10-Phen (BCP), the thickness of the second electron transfer layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is 4 of the CsF that adulterated, 7-diphenyl-1,10-Phen (BCP), CsF account for electron injecting layer gross mass mass percent 25%, the thickness 20nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Al, the thickness of the negative electrode of formation is 50nm.

Embodiment 3

It is that the ito glass substrate of 100nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the V that adulterated ₂o ₅4,4'-bis-(9-carbazole) biphenyl (CBP), V ₂o ₅account for the first hole injection layer gross mass mass percent 35%, the thickness of the first hole injection layer of formation is 15nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is 4,4'-bis-(9-carbazole) biphenyl (CBP), the thickness of the first hole transmission layer of formation is 50nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the WO that adulterated ₃with FCNIr(tri-(2-(4', the fluoro-5 '-cyano group of 6'-bis-) phenylpyridine-N, C2') close iridium) CzSi(9-(4-2-methyl-2-phenylpropane base)-3, two (triphenyl the silicon)-9H-carbazoles of 6-), WO ₃account for blue light-emitting gross mass mass percent 10%, FCNIr account for blue light-emitting gross mass mass percent 20%, the thickness of the blue light-emitting of formation is 15nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is that 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), the thickness of the first electron transfer layer of formation is 60nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is WO ₃, the thickness of the charge generation layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the V that adulterated ₂o ₅4,4'-bis-(9-carbazole) biphenyl (CBP), V ₂o ₅the doping content 35% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 15nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is 4,4'-bis-(9-carbazole) biphenyl (CBP), the thickness of the second hole transmission layer of formation is 50nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is adulterated (fbi) ₂ir (acac) (two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanediones) close iridium (III)) and Ir (mppy) ₃the CBP(4 of (three [2-(p-methylphenyl) pyridines] close iridium (III)), 4'-bis-(9-carbazole) biphenyl), (fbi) ₂ir (acac) account for red and green luminous layer gross mass mass percent 2%, Ir (mppy) ₃account for red and green luminous layer gross mass mass percent 10%, the thickness of the red and green luminous layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is that 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), the thickness of the second electron transfer layer of formation is 60nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is the CsN that adulterated ₃4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium (BAlq), CsN ₃account for electron injecting layer gross mass mass percent 35%, the thickness 40nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Au, the thickness of the negative electrode of formation is 200nm.

Embodiment 4

It is that the ito glass substrate of 100nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the ReO that adulterated ₃n, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), ReO ₃account for the first hole injection layer gross mass mass percent 30%, the thickness of the first hole injection layer of formation is 13nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), the thickness of the first hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the ReO that adulterated ₃close iridium with two (4,6-difluorophenyl pyridine)-(3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2, the 4-triazoles) of FIrtaz() 26DCzPPY(2, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 6-), ReO ₃account for blue light-emitting gross mass mass percent 7%, FIrtaz account for blue light-emitting gross mass mass percent 12%, the thickness of the blue light-emitting of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is oxine aluminium (Alq ₃), the thickness of the first electron transfer layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is ReO ₃, the thickness of the charge generation layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the ReO that adulterated ₃n, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), ReO ₃the doping content 30% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 12nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), the thickness of the second hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is adulterated (F-BT) ₂ir (acac) (two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III)) and Ir (ppy) ₃the TPD(N of (three (2-phenylpyridines) close iridium), N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine), (F-BT) ₂ir (acac) account for red and green luminous layer gross mass mass percent 1%, Ir (ppy) ₃account for red and green luminous layer gross mass mass percent 5%, the thickness of the red and green luminous layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is oxine aluminium (Alq ₃), the thickness of the second electron transfer layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is the Li that adulterated ₂cO ₃oxine aluminium (Alq ₃), Li ₂cO ₃account for electron injecting layer gross mass mass percent 30%, the thickness 30nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Ag, the thickness of the negative electrode of formation is 100nm.

Embodiment 5

It is that the ito glass substrate of 100nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the MoO that adulterated ₃1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), MoO ₃account for the first hole injection layer gross mass mass percent 25%, the thickness of the first hole injection layer of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, and the material of the first hole transmission layer is 1,1-, bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the thickness of the first hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the MoO that adulterated ₃close iridium with two (4,6-difluorophenyl pyridine) (5-(pyridine-2-yl)-tetrazoliums) of FIrN4() 35DCzPPY(3, two (3-(9H-carbazole-9-yl) phenyl) pyridines of 5-), MoO ₃account for blue light-emitting gross mass mass percent 7%, FIrN4 account for blue light-emitting gross mass mass percent 12%, the thickness of the blue light-emitting of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, and the material of the first electron transfer layer is 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, and 2,4-triazole (TAZ), the thickness of the first electron transfer layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is MoO ₃, the thickness of the charge generation layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the MoO that adulterated ₃1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), MoO ₃the doping content 28% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 13nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, and the material of the second hole transmission layer is 1,1-, bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), the thickness of the second hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is the Ir that adulterated (btp) ₂(acac) (two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanediones) close iridium (III)) and Ir (ppy) ₂(acac) TAPC(1 of (acetopyruvic acid two (2-phenylpyridine) iridium), 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane), Ir (btp) ₂(acac) account for red and green luminous layer gross mass mass percent 1%, Ir (ppy) ₂(acac) account for red and green luminous layer gross mass mass percent 7%, the thickness of the red and green luminous layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, and the material of the second electron transfer layer is 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, and 2,4-triazole (TAZ), the thickness of the second electron transfer layer of formation is 50nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is 3-(biphenyl-4-yl)-5-(4-the tert-butyl-phenyl)-4-phenyl-4H-1 of LiF of having adulterated, 2,4-triazole (TAZ), LiF account for electron injecting layer gross mass mass percent 30%, the thickness 30nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Al, the thickness of the negative electrode of formation is 100nm.

Embodiment 6

It is that the ito glass substrate of 100nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the WO that adulterated ₃n, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), WO ₃account for the first hole injection layer gross mass mass percent 30%, the thickness of the first hole injection layer of formation is 12nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the thickness of the first hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the V that adulterated ₂o ₅close iridium with two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyls of FIrpic() UGH2(1, two (triphenyl silicon) benzene of 4--), V ₂o ₅account for blue light-emitting gross mass mass percent 7%, FIrpic account for blue light-emitting gross mass mass percent 12%, the thickness of the blue light-emitting of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), the thickness of the first electron transfer layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is V ₂o ₅, the thickness of the charge generation layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the WO that adulterated ₃n, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), WO ₃the doping content 30% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 12nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), the thickness of the second hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is the Ir that adulterated (piq) ₃(three (1-phenyl-isoquinolin) close iridium) and Ir (mppy) ₃the ADN(9 of (three [2-(p-methylphenyl) pyridines] close iridium (III)), two (1-naphthyl) anthracenes of 10-), Ir (piq) ₃account for red and green luminous layer gross mass mass percent 1%, Ir (mppy) ₃account for red and green luminous layer gross mass mass percent 6%, the thickness of the red and green luminous layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), the thickness of the second electron transfer layer of formation is 30nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is the Li that adulterated ₂1,3 of O, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), Li ₂o account for electron injecting layer gross mass mass percent 30%, the thickness 30nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Al, the thickness of the negative electrode of formation is 100nm.

Embodiment 7(comparative example)

It is that the ito glass substrate of 100nm is as conductive substrates that ITO thickness is provided, and it is handled as follows: liquid detergent cleaning → washed with de-ionized water → acetone cleaning → ethanol cleans, all with supersonic wave cleaning machine, clean, each washing adopts cleans 5 minutes, stop 5 minutes, repeat respectively the method for 3 times, and then use oven for drying.Ito glass after drying is carried out to surface activation process, to increase the oxygen content on ITO surface, improve the work function on ITO surface.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on ito glass, evaporation forms the first hole injection layer, the material of the first hole injection layer is the V that adulterated ₂o ₅4,4'-bis-(9-carbazole) biphenyl (CBP), V ₂o ₅account for the first hole injection layer gross mass mass percent 30%, the thickness of the first hole injection layer of formation is 12nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole injection layer, evaporation forms the first hole transmission layer, the material of the first hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), the thickness of the first hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first hole transmission layer, evaporation forms blue light-emitting, the material of blue light-emitting is the FIr6(two (4 that adulterated, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium) CBP(4,4'-bis-(9-carbazole) biphenyl), FIr6 account for blue light-emitting gross mass mass percent 13%, the thickness of the blue light-emitting of formation is 10nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on blue light-emitting, evaporation forms the first electron transfer layer, the material of the first electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), the thickness of the first electron transfer layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the first electron transfer layer, evaporation forms charge generation layer, the material of charge generation layer is WO ₃, the thickness of the charge generation layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on charge generation layer, evaporation forms the second hole injection layer, the material of the second hole injection layer is the MoO that adulterated ₃4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), MoO ₃the doping content 30% of mass percent that accounts for the gross mass of the second hole injection layer, the thickness of the second hole injection layer of formation is 12nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole injection layer, evaporation forms the second hole transmission layer, the material of the second hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA), the thickness of the second hole transmission layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second hole transmission layer, evaporation forms red and green luminous layer, the material of red and green luminous layer is the Ir that adulterated (MDQ) ₂(acac) (two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones) close iridium) and Ir (ppy) ₃the TCTA(4 of (three (2-phenylpyridines) close iridium), 4', 4 " tri-(carbazole-9-yl) triphenylamine), Ir (MDQ) ₂(acac) account for red and green luminous layer gross mass mass percent 1%, Ir (ppy) ₃account for red and green luminous layer gross mass mass percent 8%, the thickness of the red and green luminous layer of formation is 20nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on red and green luminous layer, evaporation forms the second electron transfer layer, the material of the second electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), the thickness of the second electron transfer layer of formation is 40nm.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on the second electron transfer layer, evaporation forms electron injecting layer, the material of electron injecting layer is the Cs that adulterated ₂cO ₃4,7-diphenyl-1,10-phenanthroline (Bphen), Cs ₂cO ₃account for electron injecting layer gross mass mass percent 30%, the thickness 30nm of the electron injecting layer of formation.

In vacuum degree 5 * 10 ^-5under the condition of Pa, with

evaporation rate, on electron injecting layer, evaporation forms negative electrode, the material of negative electrode is Al, the thickness of the negative electrode of formation is 100nm.

The luminous efficiency figure of the white light organic electroluminescent device of embodiment 1 ~ embodiment 7 preparations as shown in Figure 3, interpreting blueprints can obtain following table:

Brightness (cd/m 2)	100	300	500	700	900	1100	1300	1500	1700
										Embodiment 1 (lm/W)	46.5	45.9	45	44	43	41.6	39.9	38.2	35.5
Embodiment 2 (lm/W)	44.8	44.2	43.3	42.3	40.8	39.9	37.9	36.7	34.3
										Embodiment 3 (lm/W)	43	42.2	41.1	40.2	39	38	36.4	34.8	33.1
Embodiment 4 (lm/W)	41.6	41	39.9	39	37.7	36.3	34.9	33.1	31.4
										Embodiment 5 (lm/W)	40.6	39.6	38.5	37.2	35.4	34.1	32.7	30.7	29.9
Embodiment 6 (lm/W)	39.2	38.3	37	35.7	33.6	32.4	30.6	29.3	28
										Embodiment 7 (lm/W)	25.1	24.3	22.8	21	19.3	16.9	15	11.4	8.4

As can be seen from the above table, in embodiment 1 ~ embodiment 6, in the blue light-emitting of the white light organic electroluminescent device of preparation, mix bipolarity charge control material, improved blue light luminous efficiency, and then the luminous efficiency of raising white light organic electroluminescent device, and while increasing with brightness, efficiency decay is little, the white light organic electroluminescent device of the blue light-emitting of the bipolarity electric charge key-course that do not adulterate of comparative example's 7 preparations, and luminous efficiency improves more than 0.7 times.

Above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. a white light organic electroluminescent device, it is characterized in that, comprise the following structure stacking gradually: conductive substrates, the first hole injection layer, the first hole transmission layer, blue light-emitting, the first electron transfer layer, charge generation layer, the second hole injection layer, the second hole transmission layer, red and green luminous layer, the second electron transfer layer, electron injecting layer and negative electrode;

The material of described blue light-emitting is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

2. white light organic electroluminescent device according to claim 1, is characterized in that, described bipolarity charge control material is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one.

3. white light organic electroluminescent device according to claim 1, it is characterized in that, described Blue-light emitting host material is 4,4'-bis-(9-carbazole) biphenyl, 9,9'-(1,3-phenyl) two-9H-carbazole, 9-(4-2-methyl-2-phenylpropane base)-3, two (triphenyl the silicon)-9H-carbazoles, 2 of 6-, two (3-(9H-carbazole-9-yl) phenyl) pyridines, 3 of 6-, two (3-(9H-carbazole-9-yl) phenyl) pyridine and the Isosorbide-5-Nitraes of 5---at least one in two (triphenyl silicon) benzene;

Described blue light guest materials is two (4,6-difluorophenyl pyridine-N, C ²) pyridine formyl closes iridium, two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, three (2-(4', the fluoro-5 '-cyano group of 6'-bis-) phenylpyridine-N, C2') close iridium, two (4,6-difluorophenyl pyridine)-(3-(trifluoromethyl)-5-(pyridine-2-yl)-1,2,4-triazole) close iridium and two (4,6-difluorophenyl pyridine) (5-(pyridine-2-yl)-tetrazoliums) close iridium) at least one.

4. white light organic electroluminescent device according to claim 1, is characterized in that, described blue light guest materials account for described blue light-emitting gross mass mass percent 5% ~ 20%;

Described bipolarity charge control material account for described blue light-emitting gross mass mass percent 5% ~ 10%;

The thickness of described blue light-emitting is 5nm ~ 15nm.

5. white light organic electroluminescent device according to claim 1, is characterized in that, the material of described charge generation layer is MoO ₃, V ₂o ₅, WO ₃and ReO ₃in at least one;

The thickness of described charge generation layer is 5nm ~ 30nm.

6. white light organic electroluminescent device according to claim 1, is characterized in that, the material of described red and green luminous layer is the red green material of main part of ruddiness guest materials and green glow guest materials of having adulterated;

Described red green material of main part is 4,4', 4 " tri-(carbazole-9-yl) triphenylamine, 9,9'-(1; 3-phenyl) two-9H-carbazole, 4; 4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4; 4'-benzidine, 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane) and two (1-naphthyl) anthracenes of 9,10-at least one;

Ruddiness guest materials is two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, two [2-phenylchinoline base)-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two [N-isopropyl-2-(4-fluorophenyl) benzimidazole] (acetylacetone,2,4-pentanedione) close iridium (III), two [2-(2-fluorophenyl)-1,3-benzothiazole-N, C2] (acetylacetone,2,4-pentanedione) close iridium (III), two (2-benzothiophene-2-base-pyridine) (acetylacetone,2,4-pentanedione) and close iridium (III) and three (1-phenyl-isoquinolin) and close at least one in iridium;

Green glow guest materials is that three (2-phenylpyridines) close iridium, acetopyruvic acid two (2-phenylpyridine) iridium and three [2-(p-methylphenyl) pyridine] closes at least one in iridium (III).

7. white light organic electroluminescent device according to claim 6, is characterized in that, described ruddiness guest materials account for described red and green luminous layer gross mass mass percent 0.5% ~ 2%;

Described green glow guest materials account for described red and green luminous layer gross mass mass percent 2% ~ 10%;

Thickness 10nm ~ the 30nm of described red and green luminous layer.

8. white light organic electroluminescent device according to claim 1, is characterized in that, the material of described the first hole injection layer is the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one hole mobile material;

Described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine, 4; 4'-bis-(9-carbazole) biphenyl, N; N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine and 1; 1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] at least one in cyclohexane;

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for described the first hole injection layer gross mass mass percent 25% ~ 35%;

The thickness of described the first hole injection layer is 10nm ~ 15nm;

The material of described the second hole injection layer is the MoO that adulterated ₃, WO ₃, V ₂o ₅and ReO ₃in at least one described hole mobile material;

MoO ₃, WO ₃, V ₂o ₅and ReO ₃account for described the second hole injection layer gross mass mass percent 25% ~ 35%;

The thickness of described the second hole injection layer is 10nm ~ 15nm.

9. white light organic electroluminescent device according to claim 1, is characterized in that, the material of described electron injecting layer is the Cs that adulterated ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂the electron transport material of at least one in O;

Described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phen, 4-biphenyl phenolic group-bis-(2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole and 1, at least one in 3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene;

Cs ₂cO ₃, CsF, CsN ₃, Li ₂cO ₃, LiF and Li ₂o account for described electron injecting layer gross mass mass percent 25% ~ 35%;

The thickness of described electron injecting layer is 20nm ~ 40nm.

10. a preparation method for white light organic electroluminescent device, is characterized in that, comprises the steps:

Clean conductive substrates is provided;

In described conductive substrates, evaporation forms the first hole injection layer, the first hole transmission layer, blue light-emitting, the first electron transfer layer, charge generation layer, the second hole injection layer, the second hole transmission layer, red and green luminous layer, the second electron transfer layer, electron injecting layer and negative electrode successively; Wherein, the material of described blue light-emitting is the Blue-light emitting host material of blue light guest materials and bipolarity charge control material of having adulterated.

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