CN107424916A - Lightwave detector substrate and preparation method thereof - Google Patents
Lightwave detector substrate and preparation method thereof Download PDFInfo
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- CN107424916A CN107424916A CN201710590325.3A CN201710590325A CN107424916A CN 107424916 A CN107424916 A CN 107424916A CN 201710590325 A CN201710590325 A CN 201710590325A CN 107424916 A CN107424916 A CN 107424916A
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- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 238000003756 stirring Methods 0.000 claims description 40
- 239000010410 layer Substances 0.000 claims description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 239000012044 organic layer Substances 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 239000011858 nanopowder Substances 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 13
- 239000013049 sediment Substances 0.000 claims description 13
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000012141 concentrate Substances 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 12
- 239000006185 dispersion Substances 0.000 claims description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 10
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- LXCYSACZTOKNNS-UHFFFAOYSA-N diethoxy(oxo)phosphanium Chemical compound CCO[P+](=O)OCC LXCYSACZTOKNNS-UHFFFAOYSA-N 0.000 claims description 6
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 claims description 5
- IRQWEODKXLDORP-UHFFFAOYSA-N 4-ethenylbenzoic acid Chemical class OC(=O)C1=CC=C(C=C)C=C1 IRQWEODKXLDORP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- ODVRHJKVXOGKEJ-UHFFFAOYSA-N iron 5,10,15,20-tetraphenyl-21,23-dihydroporphyrin Chemical compound [Fe].c1cc2nc1c(-c1ccccc1)c1ccc([nH]1)c(-c1ccccc1)c1ccc(n1)c(-c1ccccc1)c1ccc([nH]1)c2-c1ccccc1 ODVRHJKVXOGKEJ-UHFFFAOYSA-N 0.000 claims description 5
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 claims description 5
- 229940071125 manganese acetate Drugs 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 3
- JYYNAJVZFGKDEQ-UHFFFAOYSA-N 2,4-Dimethylpyridine Chemical class CC1=CC=NC(C)=C1 JYYNAJVZFGKDEQ-UHFFFAOYSA-N 0.000 claims description 2
- RHQZVNWMUQLPOM-UHFFFAOYSA-N 2-(cyclobuten-1-yl)isoindole-1,3-dione Chemical compound O=C1N(C2=CCC2)C(=O)c2ccccc12 RHQZVNWMUQLPOM-UHFFFAOYSA-N 0.000 claims description 2
- -1 Oxygen alkane Chemical class 0.000 claims description 2
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 2
- 238000007689 inspection Methods 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 239000002320 enamel (paints) Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- PHEDXBVPIONUQT-RGYGYFBISA-N phorbol 13-acetate 12-myristate Chemical compound C([C@]1(O)C(=O)C(C)=C[C@H]1[C@@]1(O)[C@H](C)[C@H]2OC(=O)CCCCCCCCCCCCC)C(CO)=C[C@H]1[C@H]1[C@]2(OC(C)=O)C1(C)C PHEDXBVPIONUQT-RGYGYFBISA-N 0.000 claims 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims 1
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000004043 responsiveness Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- BBRDYEXYVDCLGB-UHFFFAOYSA-N [Fe].C1(=CC=CC=C1)C1=C2NC(=C1)C=C1C=CC(=N1)C=C1C=CC(N1)=CC=1C=CC(N1)=C2 Chemical compound [Fe].C1(=CC=CC=C1)C1=C2NC(=C1)C=C1C=CC(=N1)C=C1C=CC(N1)=CC=1C=CC(N1)=C2 BBRDYEXYVDCLGB-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- LLYXJBROWQDVMI-UHFFFAOYSA-N 2-chloro-4-nitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1Cl LLYXJBROWQDVMI-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- KTPIHRZQGZDLSN-UHFFFAOYSA-N cobalt;nitric acid Chemical compound [Co].O[N+]([O-])=O KTPIHRZQGZDLSN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005474 octanoate group Chemical group 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention belongs to detector technology field, and in particular to a kind of lightwave detector substrate and preparation method thereof.Machine layer presoma, composite bed presoma, ceramic layer presoma are sequentially coated with heat resistant substrates, is dried every time after coating at 210 DEG C, obtains substrate；Detector is prepared further according to conventional, possesses the advantages of high speed, high sensitivity, high s/n ratio.
Description
Technical field
The invention belongs to detector technology field, and in particular to a kind of lightwave detector substrate and preparation method thereof.
Background technology
Because the radiant power of current Terahertz light source is universal all than relatively low, and existing lightwave detector generally has sound
Answer speed slow (pyroelectric detector), look-in frequency narrow (Schottky diode), poor sensitivity (Golay cell detectors) and
The shortcomings that needing low-temperature working (bolometer), thus develop a kind of high speed, high sensitivity, high noise and in room temperature, even
The lightwave detector that can be worked under the conditions of over-room-temp is particularly important.Prior art is lost due to gallium nitrogen and the lattice of Sapphire Substrate
Match somebody with somebody and thermal mismatching is all very big, the sample surface morphology of growth is very poor, and epitaxial film has crackle；First it can be buffered in low temperature preparation
Layer high growth temperature aluminum gallium nitride/gallium nitrogen again, can somewhat improve growth result；But raising is limited, and cause cost rise, step
Rapid cumbersome, resource consumption, because the first step is also required to carry out at a high temperature of more than 500 degree, it is important to if the first step is present
Defect can have a strong impact on second step, and effect not as directly preparing on sapphire.Substrate is to extension aluminum gallium nitride/gallium nitrogen crystal mass
Influence greatly, material impact is produced to the Performance And Reliability of device, this is that prior art lightwave detector is ripe slowly main
Reason.
The content of the invention
The invention discloses a kind of lightwave detector substrate and preparation method thereof.
A kind of preparation method of lightwave detector substrate, comprises the following steps：
(1) graphene oxide, epoxy resin are added into PMA, return stirring adds N- cyclobutenyl O-phthalics after 40 minutes
Acid imide and diphenyl silanediol, continue stirring 2 minutes, then add diethyl phosphite, cumyl peroxide, stirring
50 minutes, obtain organic layer presoma；
(2) six ammonium chloroiridates are added into ethanol and trifluoroacetic acid, after stirring, under nitrogen protection, add sec-butyl
Lithium, stannous octoate；Return stirring adds ammoniacal liquor after 80 minutes；Reaction naturally cools to room temperature after 90 minutes, add ethyl acetate,
Centrifuged after standing, obtain centrifugal sediment；
(3) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed；Manganese acetate, nitre are added in dispersion
Sour cobalt, water, stir 2 minutes and add triscyclopentadienyl samarium, stir 3 hours, obtain ceramic layer presoma；
(4) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed, adds polyvinyl alcohol, hydrogen peroxide, four
Phenyl PORPHYRIN IRON, 60 DEG C are stirred 2 hours, then add 4- vinylbenzoates, octamethylcy-clotetrasiloxane, 4,6- diformazans
Yl pyridines -2- ketone, return stirring 40 minutes, then it is concentrated to give the concentrate of solid content 60%；Concentrate is subjected to hypergravity
Processing；Then it is spray-dried, obtains nano powder；The rotating speed of the hypergravity processing is 45000~50000rpm；The stream of concentrate
Measure as 140~150mL/min；
(5) nano powder is added in organic layer presoma, stirring adds CNT after 15 minutes, stirring obtains for 90 minutes
Composite bed presoma；
(6) machine layer presoma, composite bed presoma, ceramic layer presoma are sequentially coated with the silicon chip of cleaning, is obtained
Substrate；Dried every time after coating at 210 DEG C.
A kind of preparation method the invention also discloses lightwave detector with substrate presoma, the lightwave detector lining
Bottom presoma includes organic layer presoma, composite bed presoma, ceramic layer presoma；Preparation comprises the following steps：
(1) graphene oxide, epoxy resin are added into PMA, return stirring adds N- cyclobutenyl O-phthalics after 40 minutes
Acid imide and diphenyl silanediol, continue stirring 2 minutes, then add diethyl phosphite, cumyl peroxide, stirring
50 minutes, obtain organic layer presoma；
(2) six ammonium chloroiridates are added into ethanol and trifluoroacetic acid, after stirring, under nitrogen protection, add sec-butyl
Lithium, stannous octoate；Return stirring adds ammoniacal liquor after 80 minutes；Reaction naturally cools to room temperature after 90 minutes, add ethyl acetate,
Centrifuged after standing, obtain centrifugal sediment；
(3) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed；Manganese acetate, nitre are added in dispersion
Sour cobalt, water, stir 2 minutes and add triscyclopentadienyl samarium, stir 3 hours, obtain ceramic layer presoma；
(4) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed, adds polyvinyl alcohol, hydrogen peroxide, four
Phenyl PORPHYRIN IRON, 60 DEG C are stirred 2 hours, then add 4- vinylbenzoates, octamethylcy-clotetrasiloxane, 4,6- diformazans
Yl pyridines -2- ketone, return stirring 40 minutes, then it is concentrated to give the concentrate of solid content 60%；Concentrate is subjected to hypergravity
Processing；Then it is spray-dried, obtains nano powder；The rotating speed of the hypergravity processing is 45000~50000rpm；The stream of concentrate
Measure as 140~150mL/min；
(5) nano powder is added in organic layer presoma, stirring adds CNT after 15 minutes, stirring obtains for 90 minutes
Composite bed presoma.
The invention also discloses a kind of preparation method of light wave detecting system, comprise the following steps, it is sharp on above-mentioned substrate
Aluminum gallium nitride/gallium nitrogen layer is prepared with epitaxy；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to
To lightwave detector；Lightwave detector is packaged, obtains light wave detection device；By light wave detection device and support, computer,
Signal lamp combines, and obtains light wave detecting system.
The invention also discloses a kind of preparation method of lightwave detector, comprise the following steps, utilized on above-mentioned substrate
Epitaxy prepares aluminum gallium nitride/gallium nitrogen layer；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to obtain
Lightwave detector.
The invention also discloses a kind of preparation method of light wave detection device, comprise the following steps, it is sharp on above-mentioned substrate
Aluminum gallium nitride/gallium nitrogen layer is prepared with epitaxy；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to
To lightwave detector；Lightwave detector is packaged, obtains light wave detection device.
In the present invention, six ammonium chloroiridates, s-butyl lithium, stannous octoate, ethanol, trifluoroacetic acid, ammoniacal liquor, manganese acetate, nitric acid
Cobalt, water, the mass ratio of triscyclopentadienyl samarium are 10: 5: 25: 150: 100: 20: 20: 35: 40: 5；The present invention limits each component dosage and work
Skill parameter, on the one hand because not referring to document before making the present invention, more without theoretical direction, two aspects are because heteroplasmon is outstanding
It is very crucial that it is used for the preparation process for the heteroplasmon for detecting device, is the basis of device performance, directly affects device application valency
Value, three aspects are because substrate prepared by the condition that the present invention limits is prepared for device, and the technique effect of acquirement is very good, especially
It is the cooperation of organic layer presoma, composite bed presoma, ceramic layer presoma trilaminate material, had both solved asking for hetero-junctions support
Topic, the defects of turn avoid existing substrate such as sapphire is present, also as the use of nano powder so that substrate mechanical property
By force, good electrical property.Centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 4- vinylbenzoates, prestox
Cyclotetrasiloxane, the mass ratio of 4,6- lutidines -2- ketone are 100: 20: 5: 0.1: 10: 8: 8；The present invention is poly- by adding
Hydrogen peroxide, tetraphenylporphyrin iron are added while vinyl alcohol, in addition to increasing nano powder surface-active, it is often more important that to poly-
The molecular weight of vinyl alcohol has been reduced has certain degradation to the strand of polyvinyl alcohol, and this is to subsequent conductive nano powder
After being mixed with resin, the dispersive property and the relevant key of continuous performance that improve metal oxide help, and especially avoid polyethylene
Influence of the alcohol to overall performance, given full play to polyvinyl alcohol conductive powder body surface combine other compounds improve activity and
Increase the advantages of compatibility is so as to embody good electrical properties, add extension preparation process sintering effect.Graphene oxide, epoxy
Resin, PMA, N- cyclobutenyl phthalimide, diphenyl silanediol, diethyl phosphite, cumyl peroxide
Mass ratio is 5: 100: 100: 20: 15: 20: 2；Nano powder, organic layer presoma, the mass ratio of CNT are 100: 40: 1；
The mass concentration of the ammoniacal liquor is 15%；The molecular weight of the polyvinyl alcohol is 1500~2000；Organic layer presoma, composite bed
The thickness of presoma, ceramic layer presoma in heat resistant substrates is respectively 20 microns, 800 microns, 400 microns；The epitaxy
For metal-organic chemical vapor epitaxy, molecular beam epitaxy or hydride vapour phase epitaxy method.In the present invention, in extension system
During standby gallium nitrogen, significant change occurs for each layer, produces chemical reaction, and organic layer presoma is first formed by curing cross-linked structure, body
Now certain mechanical strength, is then carbonized, and composite bed presoma nano powder interacts to form network structure with organic system, and with it is upper
Lower floor produces chemical bond power and make it that three layers are combined together, and subsequent organic layers carbonization, nano powder form compact texture, ceramic layer
Presoma occurs oxide and dissolved each other, and ultimately forms compact texture, in special dense material based on electric conductive oxidation compound,
Graphene, CNT and the element silicon contained simultaneously improves its mechanical strength, so as to support overlying material；Thickness
It is preferred, possess excellent mechanical property and electrical property after the substrate desquamation heat resistant substrates for both ensureing to obtain, again ensure extension
The problems such as preparation process is not in pollution, displacement caused by organic matter flowing, so that in the device prepared, sample surface morphology
Well, crackle is not present in aluminum gallium nitride/gallium nitrogen layer film, therefore ensures test width and precision.
The answering in light wave detection the invention also discloses the product prepared according to above-mentioned preparation method and the product
With.
The invention discloses a kind of composite substrate, is subsequently further operated on substrate, such as
On substrate aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy；Then active region mesa, gate medium, ohmic contact windows, electricity are prepared
Pole, encapsulation, combination belong to prior art, and parameter as needed is designed, and the technology of the present invention effect will not be had an impact,
It may refer to existing patent.The present invention is in growth course, and sintering, which occurs, forms compact texture simultaneously for composite bed and ceramic layer,
Not only aluminum gallium nitride/gallium nitrogen can have been supported but also can solve existing substrate and the unmatched problem of gallium nitrogen, organic layer is polymeric layer, outside
Prolong preparation process and be decomposed into carbon material, limit and combined together under thickness condition with compact texture, with the silicon chip of cleaning without active force,
Both the stripping for the silicon chip that can have been realized and clean, can possess low resistance again, the silicon chip effect of cleaning is simple, before functioning only as
Phase supports, after the completion of growth, you can removes.
Prior art mainly studies the influence of hetero-junctions and antenna to device, for Influencing Mechanism caused by substrate also not
It is clear, but those skilled in the art know substrate as device preparation and the important composition of structure, the influence to device is very
Greatly.Unfortunately, due to too big and electrochemistry the complexity of subject crossing, devices field is detected at present also without departing from basic
Sapphire, silicon carbide substrate research, inventor cooperates with colleges and universities electronic applications expert, and creative design is new
Substrate is used for the preparation of hetero-junctions, without changing existing device preparation technology, obtained excellent product performance, has powerful answer
Use potentiality.
Embodiment
The invention is the preparation of substrate, is subsequently further operated on substrate, for example is utilized on substrate
1100 DEG C of epitaxy (optional metal-organic chemical vapor epitaxy, molecular beam epitaxy or hydride vapour phase epitaxy method) is made
Standby aluminum gallium nitride/gallium nitrogen layer；Then prepare active region mesa, gate medium, ohmic contact windows, electrode, encapsulation, with support, computer,
Signal lamp combination belongs to prior art, and its parameter designing is existing universal design；The mass concentration of ammoniacal liquor is 15%；Polyethylene
The molecular weight of alcohol is 1500~2000.
Embodiment one
A kind of preparation method of lightwave detector, comprises the following steps：
(1) 50g graphene oxides, 1Kg epoxy resin are added in 1Kg PMA, return stirring adds after 40 minutes
200gN- cyclobutenyls phthalimide and 150g diphenyl silanediols, continue stirring 2 minutes, then add 200g diethyl
Phosphite ester, 20g cumyl peroxides, stir 50 minutes, obtain organic layer presoma；To 1500g ethanol and 1000g trifluoros
The ammonium chloroiridates of 100g six are added in acetic acid, after stirring, under nitrogen protection, add 50g s-butyl lithiums, 250g stannous octoates；
Return stirring adds 200g ammoniacal liquor after 80 minutes；Reaction naturally cools to room temperature after 90 minutes, adds ethyl acetate, after standing from
The heart；Resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed；Added in the dispersion of half 100g manganese acetates,
175g cobalt nitrates, 200g water, stir 2 minutes and add 25g triscyclopentadienyl samariums, stir 3 hours, obtain ceramic layer presoma；Take 100g from
Heart sediment adds ethanol, adds 20g polyvinyl alcohol, 5g hydrogen peroxide, 0.1g tetraphenylporphyrin iron, and 60 DEG C are stirred 2 hours, so
10g4- vinylbenzoates, 8g octamethylcy-clotetrasiloxanes, 8g4,6- lutidines -2- ketone, return stirring are added afterwards
40 minutes, then it is concentrated to give the concentrate of solid content 60%；Concentrate is subjected to hypergravity processing；Then it is spray-dried, obtains
To nano powder；The rotating speed of the hypergravity processing is 50000rpm；The flow of concentrate is 140mL/min；By 100g nano powders
Add in 40g organic layer presomas, stirring adds 1g CNTs after 15 minutes, stirring obtains composite bed presoma in 90 minutes；
Organic layer presoma, composite bed presoma, ceramic layer presoma composition lightwave detector substrate presoma；
(2) machine layer presoma, composite bed presoma, ceramic layer presoma are sequentially coated with the silicon chip of cleaning, every time
Dried after coating at 210 DEG C；Substrate is obtained, organic layer presoma, composite bed presoma, ceramic layer presoma are in heat resistant substrates
Thickness be respectively 20 microns, 800 microns, 400 microns；Initial pyrolyzation temperature is 421 DEG C, and 900 DEG C of carbon yields reach 85%,
Impact strength reaches 27.6KJ/m2, hetero-junctions backing material, the Ω cm of specific insulation 1.7 can be used as completely；With raw material,
Another patent of parameter change has difference but all good；
(3) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；The silicon chip of cleaning is removed, then prepares active area
Table top, gate medium, ohmic contact windows, electrode, so as to obtain lightwave detector；There can be 4700cm2/ Vs high electron mobility
Rate, two-dimensional electron gas density is very high, generally up to 1014cm2Rank；Lightwave detector is packaged, obtains light wave detection dress
Put；Light wave detection device is combined with support, computer, signal lamp, obtains light wave detecting system.
Carry out the application test of 1.0THz ripples to the device of preparation, under normal temperature, responsiveness 228mA/W, the response time is
9ps；Under liquid nitrogen, responsiveness 392mA/W, response time 3ps；At 80 DEG C, responsiveness 146mA/W, the response time is
15ps.Contrasted using existing sapphire substrates：Under normal temperature, responsiveness 119mA/W, response time 11ps；Under liquid nitrogen, ring
Response is 297mA/W, response time 5ps.As can be seen that the present invention not only possesses excellent test performance at room temperature,
Still there is good performance under hot environment, achieve unexpected technique effect.
Claims (10)
1. a kind of preparation method of lightwave detector substrate, comprises the following steps：
(1) graphene oxide, epoxy resin are added into PMA, return stirring adds N- cyclobutenyls phthalyl Asia after 40 minutes
Amine and diphenyl silanediol, continue stirring 2 minutes, then add diethyl phosphite, cumyl peroxide, stir 50 points
Clock, obtain organic layer presoma；
(2) six ammonium chloroiridates are added into ethanol and trifluoroacetic acid, after stirring, under nitrogen protection, add s-butyl lithium, pungent
Sour stannous；Return stirring adds ammoniacal liquor after 80 minutes；Reaction naturally cools to room temperature after 90 minutes, add ethyl acetate, stands
After centrifuge, obtain centrifugal sediment；
(3) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed；Manganese acetate, nitric acid are added in dispersion
Cobalt, water, stir 2 minutes and add triscyclopentadienyl samarium, stir 3 hours, obtain ceramic layer presoma；
(4) resulting dispersion system in ethanol is scattered in after centrifugal sediment is washed, adds polyvinyl alcohol, hydrogen peroxide, tetraphenyl
PORPHYRIN IRON, 60 DEG C are stirred 2 hours, then add 4- vinylbenzoates, octamethylcy-clotetrasiloxane, 4,6- dimethyl pyrazoles
Pyridine -2- ketone, return stirring 40 minutes, then it is concentrated to give the concentrate of solid content 60%；Concentrate is subjected to hypergravity processing；
Then it is spray-dried, obtains nano powder；The rotating speed of the hypergravity processing is 45000~50000rpm；The flow of concentrate is
140~150mL/min；
(5) nano powder is added in organic layer presoma, stirring adds CNT after 15 minutes, stirring obtains compound for 90 minutes
Layer presoma；
(6) machine layer presoma, composite bed presoma, ceramic layer presoma are sequentially coated with the silicon chip of cleaning, obtains substrate；
Dried every time after coating at 210 DEG C.
2. a kind of lightwave detector preparation method of substrate presoma, comprises the following steps, by organic layer described in claim 1
Presoma, composite bed presoma, ceramic layer presoma combine to obtain lightwave detector substrate presoma.
3. a kind of preparation method of light wave detecting system, comprises the following steps, epitaxy is being utilized described in claim 1 on substrate
Prepare aluminum gallium nitride/gallium nitrogen layer；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to obtain light wave inspection
Survey device；Lightwave detector is packaged, obtains light wave detection device；By light wave detection device and support, computer, indicator lamp groups
Close, obtain light wave detecting system.
4. a kind of preparation method of lightwave detector, comprises the following steps, extension legal system is being utilized described in claim 1 on substrate
Standby aluminum gallium nitride/gallium nitrogen layer；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to obtain light wave detection
Device.
5. a kind of preparation method of light wave detection device, comprises the following steps, epitaxy is being utilized described in claim 1 on substrate
Prepare aluminum gallium nitride/gallium nitrogen layer；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, so as to obtain light wave inspection
Survey device；Lightwave detector is packaged, obtains light wave detection device.
6. preparation method according to claims 1 to 5, it is characterised in that six ammonium chloroiridates, s-butyl lithium, stannous octoate,
Ethanol, trifluoroacetic acid, ammoniacal liquor, manganese acetate, cobalt nitrate, water, the mass ratio of triscyclopentadienyl samarium are 10: 5: 25: 150: 100: 20: 20: 35:
40∶5；Centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 4- vinylbenzoates, the silicon of prestox ring four
Oxygen alkane, the mass ratio of 4,6- lutidines -2- ketone are 100: 20: 5: 0.1: 10: 8: 8；Graphene oxide, epoxy resin,
PMA, N- cyclobutenyl phthalimide, diphenyl silanediol, diethyl phosphite, the mass ratio of cumyl peroxide
For 5: 100: 100: 20: 15: 20: 2；Nano powder, organic layer presoma, the mass ratio of CNT are 100: 40: 1.
7. preparation method according to claims 1 to 5, it is characterised in that the mass concentration of the ammoniacal liquor is 15%；It is described
The molecular weight of polyvinyl alcohol is 1500~2000.
8. preparation method according to claims 1 to 4, it is characterised in that organic layer presoma, composite bed presoma, pottery
Thickness of the enamel coating presoma in heat resistant substrates is respectively 20 microns, 800 microns, 400 microns；The epitaxy is that metal is organic
Thing chemistry vapour phase epitaxy method, molecular beam epitaxy or hydride vapour phase epitaxy method.
9. product prepared by the preparation method according to claim 1,2,3,4 or 5.
10. application of the product described in claim 10 in light wave detection.
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Application publication date: 20171201 |