CN108956537A - A kind of Superfast time resolution transient state reflecting spectrograph - Google Patents
A kind of Superfast time resolution transient state reflecting spectrograph Download PDFInfo
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- CN108956537A CN108956537A CN201810621310.3A CN201810621310A CN108956537A CN 108956537 A CN108956537 A CN 108956537A CN 201810621310 A CN201810621310 A CN 201810621310A CN 108956537 A CN108956537 A CN 108956537A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N2021/557—Detecting specular reflective parts on sample
Abstract
The embodiment of the present invention provides a kind of Superfast time resolution transient state reflecting spectrograph, including femtosecond laser light source, beam splitter, pumping photosystem, detection photosystem, photodetector and computer；It is used to femtosecond pulse being divided into the first pulse laser and the second pulse laser by beam splitter, and first pulse laser is sent to the pumping photosystem, second pulse laser is sent to the detection photosystem；The pumping photosystem carries out process of frequency multiplication to first pulse laser and obtains half-wavelength pump light for receiving first pulse laser, and the half-wavelength pump light is focused to sample surfaces；The detection photosystem is used to carry out delay disposal to second pulse laser, obtains all-wave length detection light, and focuses to all-wave length detection light on sample after the half-wavelength pump light focuses to sample surfaces；It realizes the mode of dual wavelength pumping-detection, measures the relative change rate of bulk surface transient reflectivity.
Description
Technical field
The present invention relates to technical field of ultrafast laser, more particularly, to a kind of Superfast time resolution transient state reflectance spectrum
Instrument.
Background technique
In the past few decades, the ultrafast carrier dynamics field of semiconductor achieves huge progress.This achievement
The driving force of behind is the direct application of semiconductor devices and has no limits to faster response speed and faster information processing
It is required that.In order to improve and develop microelectronic device and meet above-mentioned requirements, it is necessary to have to dynamic processes various in semiconductor
Basic insight and detailed research.Therefore, excitation of the semiconductor under nonequilibrium condition and subsequent various carriers
Relaxation process has become a key area of semiconducter research.
Traditional laboratory facilities usually utilize external electrical field driving conduction band in electron motion to measure its transport property or
Tunnelling property, or change external parameter such as temperature, doping, pressure and magnetic field etc., so that photoinduced electron jumps between energy level
Move and then observe its optical absorption spectra or emission spectra, however, these external drive action times much larger than internal system freedom degree it
Between interaction time, so that substance be made to be in quasi-equilibrium state, at this time between the freedom degrees such as electronics, lattice and spin mutually
Tied up in knots is difficult individually to be studied.Relatively, it can produce ultrafast nonequilibrium state using femto-second laser pulse excitation substance,
Since electronics, lattice and Spin dynamics etc. have different characteristics the time, we can use time resolution pumping-detection
Spectrum in the time domain studies each own degree respectively.Moreover, the generation of photoexcitation carrier, migration and compound power
Process is often on picosecond magnitude, traditional static observation mode capture at all less than in it dynamics become
Change.
The experiment of most of pumping-detections is the research based on sample transmission spectrum, this for nano material, fluent material and
Thin-film material etc. has advantage outstanding, has in the multiple fields such as nanocomposite optical and solar energy conversion vital
Effect.But for bulk materials such as semiconductor, superconductor and topological insulators, transmissivity is lower, several by the way of transmission
Its variation is not observed.Therefore the device that it is necessary to study a kind of suitable for detecting material reflectance spectrum.
Summary of the invention
The present invention provides a kind of a kind of ultrafast time for overcoming the above problem or at least being partially solved the above problem point
It distinguishes transient state reflecting spectrograph, solves in the prior art for bulk materials such as semiconductor, superconductor and topological insulators, use
The mode of transmission does not almost observe its variation, so can not capture less than in it dynamic variation the problem of.
According to an aspect of the present invention, a kind of Superfast time resolution transient state reflecting spectrograph, including femtosecond laser are provided
Light source, beam splitter, pumping photosystem, detection photosystem, photodetector and computer；
The femtosecond laser light source is sent to described point for generating femtosecond pulse, and by the femtosecond pulse
Shu Jing；
The beam splitter is used to the femtosecond pulse being divided into the first pulse laser and the second pulse laser, and by institute
It states the first pulse laser and is sent to the pumping photosystem, second pulse laser is sent to the detection photosystem；
The pumping photosystem carries out process of frequency multiplication for receiving first pulse laser, to first pulse laser
Half-wavelength pump light is obtained, and the half-wavelength pump light is focused into sample surfaces；
The detection photosystem is used to carry out delay disposal to second pulse laser, obtains all-wave length detection light, and
All-wave length detection light is focused on sample after the half-wavelength pump light focuses to sample surfaces；
The photodetector is used to receive the transient state reflectivity optical signal of sample surfaces, and is transmitted to the computer；
The computer obtains the transient state reflectivity of sample surfaces for being analyzed and processed to transient state reflectivity optical signal
Variation.
The present invention proposes a kind of Superfast time resolution transient state reflecting spectrograph, by the way of dual wavelength pump probe, surveys
The relative changing value of gauge block material surface transient reflectivity come probe into semiconductor, carrier is super in superconductor and topological insulator
Fast dynamic process.
Detailed description of the invention
Fig. 1 is a kind of Superfast time resolution transient state reflecting spectrograph schematic diagram according to the embodiment of the present invention；
Fig. 2 is the cryogenic thermostat system structure diagram according to the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
Since 1960 first ruby laser is developed out in the world, under being continually striving to of scientific research personnel,
All kinds of laser technologies rapidly develop, and thus emerge the various methods for generating ultrashort laser pulse, mainly there is Q-regulating technique, mode locking
Technology and chirp compensation technology etc., with the development of these technologies, the duration of laser pulse also constantly shortens, from initial
Nanosecond order progresses into femtosecond magnitude, phase early 1980s, and Fork et al. utilizes impact pulse mode-locked technology, for the first time
The laser pulse that pulsewidth is less than 100fs (10-15s) is obtained in dye laser, this breakthrough indicates laser
The ultrafast epoch of femtosecond time domain are entered with matter interaction.After several years, laser pulse width shortens to about 30fs, then
6fs is further dropped to, this directly to observe the variation transfer process between semiconductor and molecule.90 years 20th century
Early stage in generation, the ti sapphire laser based on self-locking mode technology generate infrared (IR) coherent pulse of 60fs.This for Ultrafast spectrum,
The generation and development of the new disciplines such as Strong-field physics provide strong technical support.For Study of Laser and matter interaction
Unprecedented extreme physical condition is provided.
Therefore, in the present embodiment, a kind of Superfast time resolution transient state reflecting spectrograph is provided, as shown in Figure 1, including
Femtosecond laser light source 1, beam splitter 2, pumping photosystem, detection photosystem, photodetector 14 and computer 16；
The femtosecond pulse is sent to described by the femtosecond laser light source 1 for generating femtosecond pulse
Beam splitter 2；
The beam splitter 2 is used to for the femtosecond pulse being divided into the first pulse laser and the second pulse laser, and will
First pulse laser is sent to the pumping photosystem, and second pulse laser is sent to the detection photosystem；
The pumping photosystem carries out process of frequency multiplication for receiving first pulse laser, to first pulse laser
Half-wavelength pump light is obtained, and the half-wavelength pump light is focused into sample surfaces；Specimen material is suitable for semiconductor, superconduction
The reflexive good bulk material such as body, topological insulator；
In the present embodiment, the detection photosystem is used to carry out delay disposal to second pulse laser, obtains complete
Wavelength detection light, and all-wave length detection light is focused into sample after the half-wavelength pump light focuses to sample surfaces
On, sample is set on sample stage；Half-wavelength pumping optical beam spot diameter is that all-wave length detects twice of light, and area is its four times, is passed through
It is completely coincident the hot spot of the hot spot and half-wavelength pump light of all-wave length detection light, such that due to half-wavelength pumps light stimulus sample
Signal intensity caused by product can be detected by all-wave length detection light completely.
In the present embodiment, in the specific implementation, even if two concentric circles hot spots are not accomplished to be completely coincident, as long as allowing half-wave
Long pump light covers all-wave length detection light, will not thus lose the signal of measurement.
The photodetector is used to receive the transient state reflectivity optical signal of sample surfaces, and is transmitted to the computer
16；
The computer 16 obtains the transient state reflection of sample surfaces for being analyzed and processed to transient state reflectivity optical signal
Rate variation, measure the relative changing value of bulk surface reflectivity probe into semiconductor, current-carrying in superconductor and topological insulator
The ultra-fast dynamics process of son.
In the present embodiment, femtosecond laser light source 1 provides femtosecond pulse, in the present embodiment, is flown by Ti:Sapphire laser
Second laser provides the laser that wavelength is 800nm, and femtosecond pulse is divided into two beams by beam splitter 2, and light beam is by pumping
Photosystem carries out process of frequency multiplication, obtains the half-wavelength pump light (i.e. 400nm) that wavelength halves, and using half-wavelength pump light as sharp
It encourages light and focuses to sample surfaces, sample is made to issue raw signal intensity in half-wavelength pumping light stimulus；Another light beam is by detection light
System, the time delay of adjustment and half-wavelength pump light, since by process of frequency multiplication, this beam femtosecond pulse is not
All-wave length detects light, using all-wave length detection light as detection light, exposes to sample, and since all-wave length detection light is described
Half-wavelength pump light focuses to all-wave length detection light on sample after focusing to sample surfaces, and since all-wave length detects light
Hot spot be overlapped with the hot spot of half-wavelength pump light, therefore all-wave length detect optical detection to signal intensity be all half-wavelength pump
Caused by Pu light stimulus sample；Half-wavelength pump is each provided by pumping photosystem and detection photosystem in the present embodiment
Pu light and all-wave length detect light, to form dual wavelength pumping-detection to sample, by changing the time delay between two-beam,
Pumping photosystem and detection photosystem each provide half-wavelength pump light and all-wave length detection light, to form dual wavelength to sample
Pumping-detection can be realized the measurement under different photon energies to sample interior dynamic process.
On the basis of the above embodiments, femtosecond pulse is divided into the first pulse by the splitting ratio by 8:2 of beam splitter 2
Laser and the second pulse laser.
Specifically, in the present embodiment, by the way that femtosecond pulse to be split, Ti:Sapphire laser femtosecond laser provides wavelength
For the light source of 800nm, femto-second laser pulse is divided into pump light and detection two beam of light after beam splitter 2, wherein the thickness of beam splitter 2
Degree is 1mm, and the splitting ratio of beam splitter 2 is 8:2, to realize while successively be visited to sample by the pump light of two kinds of wavelength
It surveys.
On the basis of the above embodiments, the pumping photosystem includes optical chopper 5, the reflection of the wave plate of λ/2 6, first
Mirror 7, BBO Crystal (chemical formula: β-BaB2O4) BBO, the first condenser lens 9；
The optical chopper 5 is used to carry out optical modulation to first pulse laser, by modulated first pulse
Laser is delivered to the wave plate of λ/2 6, and is output to modulated electric signal as reference signal in computer 16；
First reflecting mirror 7 will reflex to the bbo crystal 8 by the first pulse laser of the wave plate of λ/2 6；
The bbo crystal 8 is used to carry out process of frequency multiplication to first pulse laser to obtain half-wavelength pump light；It is non-linear
After crystal (bbo crystal 8) carries out frequency multiplication to the pump light of 800nm, the pump light that wavelength is 400nm is obtained；
First condenser lens 9 is used to the half-wavelength pump light focusing to sample surfaces.
Specifically, in pumping photosystem, the chopped device 5 of the first femtosecond pulse, the wave plate of λ/2 6, high reflection mirror (i.e. the
One reflecting mirror 7), the first condenser lens 9 of bbo crystal 8 and focal length 30cm focuses on sample surfaces.For exciting sample to cause
Its property is set to change, by absorbing photon excitation carrier, the spot diameter of half-wavelength pump light is 0.3~0.6mm,
Preferred 0.4mm in the present embodiment；Optical chopper 5 is modulated frequency for the pump light of 1000Hz with the frequency of 420Hz, adjusts
The electric signal of system is as reference signal.
On the basis of the above embodiments, the femtosecond laser light source 1 is Ti:Sapphire laser fs-laser system, the Ti:Sapphire laser
Fs-laser system generates the femtosecond pulse that repetition rate is 1KHz.
On the basis of the above embodiments, the detection photosystem includes delay reflecting mirror 3, stepper motor, the second reflection
Mirror 4 and the second condenser lens 10；
The delay reflecting mirror 3 is set in the optical path of second pulse laser, and described in the delay reflecting mirror 3 connects
Stepper motor, delay reflecting mirror 3 described in the step motor control are moved along the optical path of second pulse laser, and described the
When two pulse lasers are transferred to delay reflecting mirror 3, incident light is parallel with reflected light；
Second reflecting mirror 4 receives the second pulse laser that the delay reflecting mirror 3 reflects, and is transmitted to described second
Condenser lens 10；
Second condenser lens 10 is by second pulse laser focusing to sample.
Specifically, constructing electricity driving displacement platform in detection photosystem by stepper motor and realizing time delay, specifically
, it can be by two sides or multi-panel high reflection mirror composition delay reflecting mirror 3 (group), so that the second pulse laser is by delay reflection
After mirror 3 emits, incident light is parallel with reflected light, and is delayed reflecting mirror 3 under the control of stepper motor, can increase optical path, make
The optical path for obtaining the second pulse laser is greater than the optical path of the first pulse laser, and then realizes the second pulse laser in the first pulse laser
It is incident in sample below；In the present embodiment, delay reflecting mirror 3 includes two sides high reflection mirror, and two sides high reflection mirror is in 90 °
Setting, and the straight line where the second pulse laser and two-face mirror are at 45 °, on this basis, it is ensured that electricity driving displacement
For platform when moving linearly where the second pulse laser, incident light can be parallel to reflected light always, so as to facilitate cloth
The second reflecting mirror 4 and the second condenser lens 10 are set, in the present embodiment, 10 the second reflecting mirror 4, the second condenser lens needs are set
Set the second pulse laser institute on straight line, specifically, the precision of stepper motor is 2 μm, i.e. temporal resolution is
6.67fs。
On the basis of the above embodiments, the photodetector includes polarizing film 12, tertiary focusing lens 13 and silicon substrate
Photodetector 14, the polarizing film 12 are used to adjust half-wavelength pump light and all-wave length in the reflected light of sample and detect the inclined of light
Shake angle, and the tertiary focusing lens 13 are used to focus to the reflected light of sample the detection mouth of Si-based photodetectors 14, described
Si-based photodetectors 14 are used to receive the transient state reflectivity optical signal of sample surfaces.
On the basis of the above embodiments, measured sample optical signal (i.e. transient state reflectivity optical signal) is through polarizing film 12
It is received afterwards by Si-based photodetectors 14, Si-based photodetectors 14 convert light signals into electric signal and are then input to calculating
The processing of machine 16.The wave plate of λ/2 6 and polarizing film 12 realize pump light and detect the polarization of light, adjust 12 adjustable angle of polarizing film humorous two
The angle of polarization between Shu Guang is probed into the experimental result due to caused by the variation of the angle of polarization between pump light and detection light, is found
Polarization effect is best when maximum angular is 90 degree.
It on the basis of the above embodiments, further include lock-in amplifier 15, lock-in amplifier 15 is detected set on silicon based opto-electronics
Between device 14 and computer 16, lock-in amplifier 15 is also set between optical chopper 5 and computer, the lock-in amplifier 15
The transient state reflectivity optical signal and amplify output to computer 16 for identification.Photodetector converts light signals into telecommunications
Number it is then input to lock-in amplifier 15, is output to computer 16 through the identification amplification of lock-in amplifier 15 and handles.
In the present embodiment, lock-in amplifier 15 also receives the electric signal of the modulation of optical chopper 5, and the electric signal is put
It is input to computer 16 after big, as reference signal.
On the basis of the above embodiments, further include cryogenic thermostat system, be equipped in the cryogenic thermostat system and place sample
The sample stage 11 of product, the cryogenic thermostat system are set on D translation platform.In cryogenic thermostat system temperature range be 4~
320K, vacuum degree 10-7mbar.As shown in Fig. 2, cryogenic thermostat system is equipped with vacuum glass window 18 and vacuum meter 17, pump
Pu light (half-wavelength pump light and all-wave length detect light) and reflected light enter by vacuum glass window and spread out of cryogenic thermostat system
System.
In conclusion a kind of Superfast time resolution transient state reflecting spectrograph is provided in the embodiment of the present invention, using double wave
The mode of long pump probe measures the relative changing value of bulk surface reflectivity to probe into semiconductor, superconductor and topology absolutely
The ultra-fast dynamics process of carrier in edge body.
Finally, method of the invention is only preferable embodiment, it is not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent replacement, improvement and so on should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of Superfast time resolution transient state reflecting spectrograph, which is characterized in that including femtosecond laser light source, beam splitter, pumping
Photosystem, detection photosystem, photodetector and computer；
The femtosecond pulse is sent to the beam splitting for generating femtosecond pulse by the femtosecond laser light source
Mirror；
The beam splitter is used to the femtosecond pulse being divided into the first pulse laser and the second pulse laser, and by described the
One pulse laser is sent to the pumping photosystem, and second pulse laser is sent to the detection photosystem；
The pumping photosystem carries out process of frequency multiplication to first pulse laser and obtains for receiving first pulse laser
Half-wavelength pump light, and the half-wavelength pump light is focused into sample surfaces；
The detection photosystem is used to carry out delay disposal to second pulse laser, obtains all-wave length detection light, and in institute
It states after half-wavelength pump light focuses to sample surfaces and focuses to all-wave length detection light on sample；
The photodetector is used to receive the transient state reflectivity optical signal of sample surfaces, and is transmitted to the computer；
For being analyzed and processed to transient state reflectivity optical signal, the transient state reflectivity for obtaining sample surfaces becomes the computer
Change.
2. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that the beam splitter is pressed
Femtosecond pulse is divided into the first pulse laser and the second pulse laser by the splitting ratio of 8:2.
3. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that the pumping photosystem
Including optical chopper, the wave plate of λ/2, the first reflecting mirror, bbo crystal, the first condenser lens；
The optical chopper is used to carry out optical modulation to first pulse laser, and modulated first pulse laser is defeated
It send to the wave plate of λ/2, and is output in computer using modulated electric signal as reference signal；
First reflecting mirror will reflex to bbo crystal by the first pulse laser of the wave plate of λ/2；
The bbo crystal is used to carry out process of frequency multiplication to first pulse laser to obtain half-wavelength pump light；
First condenser lens is used to the half-wavelength pump light focusing to sample surfaces.
4. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that the femtosecond laser light
Source is Ti:Sapphire laser fs-laser system, and the Ti:Sapphire laser fs-laser system generates the femtosecond pulse that repetition rate is 1KHz and swashs
Light.
5. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that the detection photosystem
Including delay reflecting mirror, stepper motor, the second reflecting mirror and the second condenser lens；
The delay reflecting mirror is set in the optical path of second pulse laser, and the delay reflecting mirror connects the stepping electricity
Machine, delay reflecting mirror described in the step motor control is moved along the optical path of second pulse laser, and second pulse
When laser is transferred to delay reflecting mirror, incident light is parallel with reflected light；
Second reflecting mirror receives the second pulse laser of the delay reflecting mirror reflection, and is transmitted to described second and focuses thoroughly
Mirror；
Second condenser lens is by second pulse laser focusing to sample.
6. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that the photodetector
For Si-based photodetectors, including polarizing film, tertiary focusing lens and Si-based photodetectors, the polarizing film is for adjusting sample
The angle of polarization of half-wavelength pump light and all-wave length detection light, the tertiary focusing lens are used for the anti-of sample in the reflected light of product
The detection mouth that light focuses to Si-based photodetectors is penetrated, the Si-based photodetectors are used to receive the transient state reflection of sample surfaces
Rate optical signal.
7. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that further include locking phase amplification
Device, the lock-in amplifier transient state reflectivity optical signal and amplify output to computer for identification.
8. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that further include cryogenic thermostat
System, the sample stage for placing sample is equipped in the cryogenic thermostat system, and the cryogenic thermostat system is set on D translation platform.
9. Superfast time resolution transient state reflecting spectrograph according to claim 9, which is characterized in that the cryogenic thermostat system
Temperature range is 4~320K, vacuum degree 10 in uniting-7mbar。
10. Superfast time resolution transient state reflecting spectrograph according to claim 1, which is characterized in that all-wave length detects light
Hot spot be overlapped with the hot spot of half-wavelength pump light.
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| CN109813654A (en) * | 2019-02-20 | 2019-05-28 | 北京工业大学 | The time discrimination measurement device of material surface state second_harmonic generation |
| CN110908128A (en) * | 2019-11-08 | 2020-03-24 | 中国科学院上海光学精密机械研究所 | Multicolor ultrafast laser generating device |
| CN111443062A (en) * | 2020-04-26 | 2020-07-24 | 中国科学院西安光学精密机械研究所 | Ultrafast detection device and method for transient refractive index of semiconductor material |
| CN112268865A (en) * | 2020-10-19 | 2021-01-26 | 杭州奥创光子技术有限公司 | Beam-splitting delay optical path for pumping detection experiment |
| CN112284510A (en) * | 2020-10-26 | 2021-01-29 | 东南大学 | Coherent acoustic phonon echo induction and detection method in multilayer two-dimensional semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813654A (en) * | 2019-02-20 | 2019-05-28 | 北京工业大学 | The time discrimination measurement device of material surface state second_harmonic generation |
| CN109813654B (en) * | 2019-02-20 | 2021-10-01 | 北京工业大学 | Time-resolved measuring device for material surface state second harmonic generation |
| CN110908128A (en) * | 2019-11-08 | 2020-03-24 | 中国科学院上海光学精密机械研究所 | Multicolor ultrafast laser generating device |
| CN111443062A (en) * | 2020-04-26 | 2020-07-24 | 中国科学院西安光学精密机械研究所 | Ultrafast detection device and method for transient refractive index of semiconductor material |
| CN112268865A (en) * | 2020-10-19 | 2021-01-26 | 杭州奥创光子技术有限公司 | Beam-splitting delay optical path for pumping detection experiment |
| CN112284510A (en) * | 2020-10-26 | 2021-01-29 | 东南大学 | Coherent acoustic phonon echo induction and detection method in multilayer two-dimensional semiconductor |
| CN112284510B (en) * | 2020-10-26 | 2022-12-06 | 东南大学 | Coherent acoustic phonon echo induction and detection method in multilayer two-dimensional semiconductor |
| CN113075131A (en) * | 2021-03-09 | 2021-07-06 | 中国科学院上海光学精密机械研究所 | Sub-cycle pumping detection system based on time resolution |
| CN113670863A (en) * | 2021-08-17 | 2021-11-19 | 北京计算机技术及应用研究所 | Differential reflection detection method for photogenerated carriers in two-dimensional semiconductor material |
| CN114002157A (en) * | 2021-09-29 | 2022-02-01 | 山东云海国创云计算装备产业创新中心有限公司 | Device and method for measuring service life of two-dimensional semiconductor material carrier |
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