CN111443062A - Ultrafast detection device and method for transient refractive index of semiconductor material - Google Patents
Ultrafast detection device and method for transient refractive index of semiconductor material Download PDFInfo
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Abstract
The invention discloses an ultrafast detection device and method for a transient refractive index of a semiconductor material, and solves the problem that the existing method for measuring the change of the refractive index of a semiconductor cannot meet the requirements for detecting pulse incidence and pulse response characteristics. The device comprises a high-power pulse laser, a first beam splitter, a pulse X-ray excitation unit, a probe light modulation control unit, a second beam splitter and a signal reading unit; the first beam splitter is positioned in the emergent direction of the pulse laser and divides a laser beam generated by the pulse laser into an A beam and a B beam; the pulse X-ray excitation unit is positioned in the emergent direction of the beam A to generate X-rays for pulse laser, the probe light control unit is positioned in the emergent direction of the beam B to generate probe light, and the probe light and the X-rays simultaneously reach the surface of the semiconductor ultrafast detection core; modulating the refractive index of the semiconductor ultrafast detection chip by the X-ray so as to change the spectral intensity of the probe light; the signal reading unit detects the change of the light spectrum intensity of the probe to obtain the response process of the chip to the X-ray.
Description
Technical Field
The invention relates to a semiconductor material transient refractive index change detection technology, in particular to a semiconductor material transient refractive index ultrafast detection device and method based on a stepping synchronous spectrum probe.
Background
In an Inertial Confinement Fusion (ICF) experiment, the size of the target pellet is only a few millimeters and the implosion process usually lasts for only hundreds of picoseconds, and in order to perform high-time and space-resolved technical diagnosis on the process, the detection device is required to have a time resolution on the order of picoseconds and a space resolution on the order of micrometers.
The ultrafast imaging technology of the all-optical solid based on the change of the photoinduced refractive index is a novel ultrafast diagnostic technology in recent years, the ultrafast imaging capability of the all-optical solid ultrafast imaging technology can realize micron-level spatial resolution and picosecond-level time resolution, the requirements of ICF observation are completely met, K. L of U.S. Livermore laboratory in 2013 Baker and the like establish a transient phase grating type all-optical solid ultrafast amplitude-division camera based on the change of the photoinduced refractive index, and the X-ray response of the time resolution in picosecond level is realized.
As an important core component in the all-optical solid ultrafast imaging technology based on the light-induced refractive index change, the time response characteristics of X rays and other high-energy rays of a semiconductor ultrafast response chip directly determine the time resolution of the all-optical solid ultrafast imaging device. Therefore, the method for detecting the transient refractive index change of the semiconductor material is developed, and especially has very important theoretical research and engineering practice significance for detecting the transient refractive index change of the semiconductor material under the excitation condition of high-energy ray pulse (picosecond or less).
The traditional semiconductor refractive index change measuring method mainly comprises a static testing method and a pulse testing method. The method comprises the steps of statically calibrating interaction characteristics of a semiconductor material and X-rays by measuring the change amount of the refractive index of the semiconductor material before and after the incidence of a beam of X-rays with stable power; the time response characteristic of the interaction between the semiconductor material and the X-ray is dynamically calibrated by measuring the impulse response of the change of the refractive index of the semiconductor material before and after the incidence of a beam of pulse X-ray.
In practical use, the response characteristic read by the pulse probe needs to be tested under the condition of pulse X-ray incidence, and both the two measurement methods cannot meet the related detection requirements, so that a novel semiconductor material refractive index detection technology needs to be developed urgently for the chip calibration work of an all-optical solid ultrafast imaging system.
Disclosure of Invention
The invention provides a device and a method for detecting the transient refractive index of a semiconductor material, aiming at solving the technical problem that the existing method for measuring the refractive index change of a semiconductor can not meet the requirements of all-optical solid ultrafast imaging equipment on pulse incidence and pulse response characteristics.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
an ultrafast detection device of transient refractive index of semiconductor material is characterized in that: the device comprises a high-power pulse laser, a first beam splitter, a pulse X-ray excitation unit, a probe light modulation and control unit, a second beam splitter and a signal reading unit;
the high-power pulse laser is used for generating picosecond-magnitude short pulse laser, and the wavelength of the pulse laser is greater than the absorption wavelength of the semiconductor ultrafast detection chip to be detected;
the first beam splitter is positioned in the emergent direction of the high-power pulse laser and divides a laser beam into two beams, namely an A beam and a B beam, wherein the energy of the A beam is greater than that of the B beam;
the pulse X-ray excitation unit is positioned in the emergent direction of the beam A and is used for generating X-rays for the fixed time delay, optical focusing and excitation of pulse laser and transmitting the generated X-rays to the upper surface of the semiconductor ultrafast detection chip to be detected;
the probe light modulation and control unit is positioned in the emergent direction of the beam B and is used for generating probe light by spreading controllable time delay and dispersion time of pulse laser, the probe light is reflected to the lower surface of the semiconductor ultrafast detection chip to be detected through the second beam splitter, and the probe light and the X-ray simultaneously reach the surface of the semiconductor ultrafast detection chip to be detected;
the X-ray is incident to the semiconductor ultrafast detection chip to be detected, the refractive index of the semiconductor ultrafast detection chip to be detected is modulated, and the spectral intensity of probe light incident to the semiconductor ultrafast detection chip is changed;
the signal reading unit is used for collecting the probe light reflected by the semiconductor ultrafast detection chip to be detected and transmitted by the second beam splitter, and the response process of the semiconductor ultrafast detection chip to be detected to the X-ray is obtained by detecting the spectral intensity change of the probe light.
Furthermore, the pulse X-ray excitation unit comprises a time fixed delay and focus optical system and a metal target which are sequentially arranged along the transmission direction of the A light beam;
the A light beam is incident to the surface of the metal target at an angle of 45 degrees after being subjected to time fixed delay, time delay of a focusing optical system and optical focusing, and the metal target emits the generated X rays to the upper surface of the semiconductor ultrafast detection chip to be detected.
Further, the metal target is a metal gold target, and generates an X-ray pulse with a characteristic wavelength of 2.4 keV;
the metal target is a metal titanium target and generates an X-ray pulse with a characteristic wavelength of 4.8 keV;
the metal target is a metallic copper target, producing X-ray pulses of characteristic wavelength 8 keV.
Furthermore, the probe light modulation control unit comprises a reflector, an adjustable stepping type delay optical system and a dispersion broadening crystal which are sequentially arranged along the transmission direction of the B light beam.
Furthermore, the device also comprises an anti-reflection film which is arranged on the upper surface of the semiconductor ultra-fast detection chip to be detected and is used for increasing the reflection of the probe light, and an anti-reflection film which is arranged on the lower surface of the semiconductor ultra-fast detection chip to be detected and is used for increasing the reflection of the probe light.
Further, the light beam A is transmitted light, and the energy ratio is more than 99%;
the B beam is reflected light.
Further, the signal readout unit comprises a spectrometer and a data processor;
the spectrometer is used for receiving probe light reflected by the semiconductor ultrafast detection chip to be detected and transmitted by the second beam splitter;
and the data processor obtains the response time of the semiconductor ultrafast detection chip to be detected to the X rays according to the spectral intensity change of the probe light received by the spectrometer.
Meanwhile, the invention also provides a method for detecting the transient refractive index of the semiconductor material ultrafast, which is characterized by comprising the following steps:
1) the high-power pulse laser generates picosecond-magnitude short pulse laser which is divided into two beams through the first beam splitter, wherein the two beams are respectively an A beam and a B beam;
2) a, a light beam is incident to a pulse X-ray excitation unit, after time delay of a time fixing delay and time delay and optical focusing of a focusing optical system, the light beam is incident to the surface of a metal target at an angle of 45 degrees, X-rays are generated by excitation on the surface of the target, and the generated X-rays are incident to the upper surface of a semiconductor ultrafast detection chip to be detected;
b, the light beam enters the probe light modulation and control unit, is reflected by the reflector, delayed by the adjustable step-by-step delay optical system and broadened in the time domain of the dispersion broadened crystal, and is reflected to the lower surface of the semiconductor ultrafast detection chip to be detected by the second beam splitter;
meanwhile, by adjusting the adjustable stepping type delay optical system, the probe light and the X-ray simultaneously reach the surface of the semiconductor ultrafast detection chip to be detected;
3) modulating the refractive index of the semiconductor ultrafast detection chip to be detected by the X-ray, and synchronously injecting time sequence probe light pulses into the semiconductor ultrafast detection chip to be detected in the response process of the semiconductor ultrafast detection chip to be detected to the X-ray, namely changing the spectral intensity of the probe light injected into the semiconductor ultrafast detection chip;
4) the signal reading unit receives the probe light reflected by the semiconductor ultrafast detection chip to be detected and transmitted by the second beam splitter, and the response process of the semiconductor ultrafast detection chip to be detected to the X-ray is obtained by detecting the spectral intensity change of the probe light.
Compared with the prior art, the invention has the advantages that:
the invention discloses a semiconductor material transient refractive index ultrafast detection device and method, which adopts a homologous laser shunt excitation mode, wherein pulse laser generated by a high-power pulse laser is divided into two paths, one path is excited to generate X rays, the other path is used as probe light to be measured, the two paths simultaneously reach the surface of a semiconductor ultrafast detection chip, the X rays modulate the refractive index of the semiconductor ultrafast detection chip, the response process of the semiconductor ultrafast detection chip to the X rays is synchronously injected into time sequence probe light pulses in the semiconductor ultrafast detection chip to further change the spectral intensity of the probe light injected into the semiconductor ultrafast detection chip, the spectral intensity change of the probe light is obtained through a signal reading unit, the response process of the semiconductor ultrafast detection chip to be detected to the X rays can be obtained, and the detection and calibration of the transient refractive index change of a core component semiconductor ultrafast response chip of an all-optical solid ultrafast imaging technology are realized, the testing process is similar to the working principle of the all-optical solid ultrafast imaging technology, the functions of reading pulse signals and pulse probes are realized, and the working characteristics of the all-optical solid ultrafast imaging system can be truly reflected; the technical scheme of generating the X-ray pulse signal by high-energy laser pulse excitation solves the problem of synchronization of the X-ray pulse and the probe light pulse in the process of testing the transient refractive index of the semiconductor ultrafast response chip.
Drawings
FIG. 1 is a working schematic diagram of a conventional all-optical solid ultrafast imaging;
in fig. 1, the reference numerals are as follows:
01-a pulse laser light source, 02-a pulse chirping optical system, 03-a reflector, 04-a semi-transparent semi-reflecting mirror, 05-a semiconductor ultrafast detection chip and 06-a wavelength light splitting system;
FIG. 2 is a schematic structural diagram of an ultrafast detection apparatus for transient refractive index of semiconductor material according to the present invention;
FIG. 3 is a schematic diagram of a metal target generating pulsed X-rays in the apparatus for detecting the transient refractive index of a semiconductor material according to the present invention;
FIG. 4 is a schematic diagram illustrating the transient refractive index testing principle of the ultra-fast probing chip of the semiconductor device under test according to the present invention;
in fig. 2 to 4, the reference numerals are as follows:
the system comprises a 1-high-power pulse laser, a 2-first beam splitter, a 3-time fixed delay and focusing optical system, a 4-metal target, a 5-semiconductor ultrafast detection chip, a 6-reflector, a 7-adjustable stepping delay optical system, an 8-dispersion broadening crystal, a 9-second beam splitter, a 10-signal reading unit, an 11-pulse X-ray excitation unit, a 12-probe light modulation and control unit, a 13-reflection increasing film and a 14-reflection increasing film.
Detailed Description
The invention is described in further detail below with reference to the figures and specific embodiments.
As shown in fig. 1, the working schematic diagram of the all-optical solid ultrafast imaging mainly comprises a pulse laser source 01, a pulse chirping optical system 02, a reflector 03, a semi-transparent semi-reflective mirror 04, a semiconductor ultrafast detection chip 05 and a wavelength beam splitting system 06, wherein the core detection process is a bundle of chirped pulse probe light to measure a bundle of X-ray pulse images. In order to better simulate the working characteristics of an all-optical solid ultrafast imaging system and realize a detection mode of pulse excitation and pulse response, the invention provides a semiconductor transient refractive index change detection scheme based on homologous pulses, which is used for detecting a semiconductor ultrafast detection chip and realizing the detection of the pulse response characteristics of pulse incidence.
As shown in fig. 2, an ultrafast detection apparatus for transient refractive index of semiconductor material includes a high power pulse laser 1, a first beam splitter 2, a pulse X-ray excitation unit 11, a probe light control unit 12, a second beam splitter 9 and a signal readout unit 10.
The detection device of the embodiment mainly comprises the following components:
1) high power pulse laser 1
The high-power pulse laser 1 generates picosecond-level short pulse laser, and in order to meet the requirements of exciting X rays and probe testing, the pulse power of the laser needs to be high enough, the single pulse energy of the laser usually needs to reach T watt level, and the wavelength is larger than the absorption wavelength of the semiconductor ultrafast detection chip 5, namely the laser is not absorbed by the chip.
The laser generated by the high-power pulse laser 1 is divided into an A beam and a B beam by a first beam splitter 2, wherein the A beam is used for excitation and generating an X-ray pulse and is used for simulating an ultrashort pulse X-ray signal to be detected; the beam B is used as probe light for reading the transient information of the X-ray pulse;
the beam A is used for exciting the metal target to generate pulse X-rays (signal light), the energy proportion is high and is about 99%, and the beam B is used as measuring laser (probe light), the energy proportion is low and is about 1% or less;
2) pulsed X-ray excitation unit 11
The pulse X-ray excitation unit 11 mainly comprises a time-fixed delay and focusing optical system 3 and a metal target 4 which are sequentially arranged along the transmission direction of the beam A, mainly realizes the functions of time delay (coarse delay control), optical focusing, excitation generation of X-rays and the like of incident light energy pulse laser, and aims the generated X-rays at the upper surface of the semiconductor ultrafast detection chip 5.
As shown in fig. 3, the basic principle of the laser plasma excitation X-ray technology is as follows: when a high-intensity laser pulse is focused on the metal target 4 (solid target), the surface of the target is rapidly ionized to form high-temperature high-density plasma, and then X-rays are emitted. X-ray emission is related to a target material, different X-rays with different energy can be obtained from different target materials, and the X-rays with different energy can be correspondingly generated by changing a metal target material, such as a metal titanium target, and X-ray pulses with the characteristic wavelength of 4.8keV are generated; a metallic copper target producing X-ray pulses of characteristic wavelength 8 keV; a metallic gold target, generating X-ray pulses of characteristic wavelength 2.4keV, etc.
3) Probe light control unit 12
The probe light control unit 12 mainly comprises a reflector 6, an adjustable stepping delay optical system 7 and a dispersion broadening crystal 7, and mainly realizes the purposes of changing the transmission direction of incident pulse laser, controllable time delay (fine delay control), wavelength unfolding and generating probe light;
4) second beam splitter 9
The second beam splitter 9 is positioned in the emergent direction of the dispersion broadening crystal 7 and is used for optical adjustment, and the probe light with expanded wavelength is reflected to the lower surface of the semiconductor ultrafast detection chip 5;
5) signal readout unit 10
The signal reading unit 10 mainly comprises a spectrometer, a signal acquisition unit and a data processor, and mainly realizes the functions of acquiring and processing the spectrum signal returned by the semiconductor chip and the like.
The spectrometer is used for receiving the probe light reflected by the semiconductor ultrafast detection chip 5 and transmitted by the second beam splitter 9; the data processor obtains the response time of the semiconductor ultrafast detection chip 5 to the X-ray according to the spectral intensity change of the probe light received by the spectrometer.
In the embodiment, the scheme that the adjustable stepping type delay optical system 7 delays the probe light is adopted as the time standard of the transient refractive index test, and the refractive index change response time precision is high. The controllable distance precision of the stepping motor in the adjustable stepping type time-delay optical system 7 is delta l, and then the response time measurement precision delta t meets the requirement that delta t is delta l/cSpeed of lightFor example, the distance accuracy of the stepping motor is 1um, and the theoretical accuracy of the refractive index change response time can reach 3 fs.
The working process of the ultrafast detection device of the embodiment is as follows:
1) the high-power pulse laser 1 generates a pulse laser beam with pulse width in picosecond magnitude, the pulse laser beam passes through the first beam splitter 2 and is divided into two beams, namely an A beam and a B beam, the energy of the A beam is greater than that of the B beam, the A beam is used for exciting the metal target 4 to generate pulse X rays (signal light), and the B beam is used as measuring laser (probe light);
2) a light beam is incident to a pulse X-ray excitation unit 11, after time delay and optical focusing of a time fixed delay and focusing optical system 3, the light beam is incident to the surface of a metal target 4 at an angle of 45 degrees, X-rays are generated by excitation on the surface of the target, and the generated X-rays irradiate the upper surface of a semiconductor ultrafast detection chip 5;
the beam B enters a probe light modulation control unit 12, is reflected by a reflector 6, delayed by an adjustable step-by-step delay optical system 7, time domain of a dispersion broadening crystal 7 is broadened, and is reflected to the lower surface of a semiconductor ultrafast detection chip 5 by a second beam splitter 9;
the B beam is a single pulse in time and a broad spectrum in the spectral frequency domain before it enters the dispersion broadening crystal 7, with spectral line ranges: lambda [ alpha ]1To lambdan(ii) a After passing through the dispersion broadening crystal 7, due to different group velocities of different spectral components in the dispersion crystal, the B light beam generates broadening effect in the time domain, and the spectral values of the broadening pulses and the time are in one-to-one correspondence, namely, the broadening pulse is expressed as lambda1Corresponds to t1Time of day, λ2Corresponds to t2Time … …, λnCorresponds to tnTime of day;
meanwhile, by adjusting the adjustable stepping type time delay optical system 7, the probe light and the X-ray respectively reach the lower surface and the upper surface of the semiconductor ultrafast detection chip 5 at the same time;
3) the X-ray is incident to the semiconductor ultrafast detection chip 5, the refractive index of the semiconductor ultrafast detection chip 5 is modulated, the response process of the semiconductor ultrafast detection chip 5 to the X-ray is synchronously incident to the time sequence probe light pulse in the semiconductor ultrafast detection chip 5, and then the spectral distribution of the probe light incident to the semiconductor ultrafast detection chip 5 is changed, and the main process is described as follows:
the probe light (B light beam) is incident into the semiconductor ultrafast detection chip 5, the semiconductor ultrafast detection chip 5 can be equivalent to an F-P cavity structure, two surfaces of the semiconductor ultrafast detection chip 5 to be detected are respectively plated with reflection films with different reflection coefficients, specifically, the upper surface (namely the surface incident to X rays) of the semiconductor ultrafast response chip to be detected is plated with a high-reflectivity film (without influence on the X rays) of the probe light, and the lower surface (the surface incident to the probe light) of the semiconductor ultrafast response chip to be detected is not plated with a film or is plated with a low-reflectivity film (namely the high-transmissivity film to the probe light) of the probe light.
Front and back surfaces of probe light on semiconductor ultrafast detection chip 5The surface forms a stable interference field after multiple reflection and transmission. Let the initial refractive index of the chip be n0After the chip is modulated by X-rays, the refractive index variation is delta n. The multi-beam stable interference field complex amplitude of the probe light is:
A＝A0(r1+t1r-2t-1ei+t1r-2r-1r-2t-1ei2+…)
＝A0{r1+t1r-2t-1ei[1+r-1r-2ei+(r-1r-2ei)2+…]}
wherein A is0Is the original input light intensity, r1The reflectivity of the incidence plane 1 (front incidence plane) from air to the chip (from light scattering to optically dense medium), r-1The reflectivity of the incident surface 1 (front incident surface) from the chip into the air (from the optical density to the optical density medium), r-2The reflectivity, t, of the bit incident plane 2 (back incident plane) from the chip into the air (from the optical density to the optically thinner medium)1The transmittance, t, of the bit incident surface 1 (front incident surface) from air into the chip (from light scattering to optically dense medium)-1The transmittance of the incident surface 1 (front incident surface) from the chip into the air (light density to light sparse medium), t-2The transmittance of the incident surface 2 (rear incident surface) from the chip into the air (light density to light-thinning medium), eiThe light intensity phase complex amplitude is obtained, and the phase satisfies:
where d is the thickness of the chip, dx is the thickness of the chip excitation layer, and λ is the wavelength of the incident light. Using an equal ratio series to sum to obtain:
in the absence of X-ray excitation, Δ n is 0, then the initial phase:
an initial light intensity distribution can be obtained:
under X ray excitation, because the difficult affirmation of chip excitation layer thickness, the calculation is equivalent with whole phase place, and incident probe light passes through the preceding incident surface of chip and gets into the chip and pass through the modulation region, passes through back incident surface reflection again, passes through the modulation region once more, makes the incident light phase place change:
x＝0+2Δφ
wherein the content of the first and second substances,xthe total amount of change in the phase,0and the original phase is obtained, wherein delta phi is the optical phase change of the probe after passing through the primary modulation area and is substituted into the light intensity expression:
thus, under X-ray excitation, the relative intensity change of the emitted light defining the probe light is
By calculation, the initial light intensity A can be obtained0The approximate, i.e. the relative change in intensity is independent of the incident intensity and only dependent on the phase change a phi generated by the X-rays.
4) The signal reading unit 10 receives the probe light reflected by the semiconductor ultrafast detection chip 5 and transmitted by the second beam splitter 9, and obtains the response process of the semiconductor ultrafast detection chip 5 to the X-ray by detecting the spectral intensity change of the probe light.
The process is described in detail as follows:
the probe light is spread in the time domain after passing through the dispersive crystal, and the wavelength information corresponds to the time domain information one by one. I.e. B beam laser, after passing through a dispersive material, an approximately linear chirped pulse is obtained and used as a time-sequenced probe light.
For the emergent probe light, the spectral characteristics satisfy the following formula:
A(tn)＝CA(λn)(n＝1，2，3，......)
wherein, A (t)n) Is the intensity of light at a certain moment, A (λ)n) C is a characteristic constant for corresponding light intensity of the spectrum, namely, the time domain characteristics of the probe light and the frequency domain characteristics of the spectrum realize one-to-one correspondence.
When X-rays act on the semiconductor ultrafast detection chip 5, the wavelength λ incident at that moment is causedtThe intensity of the emergent light changes, i.e. AModulationThe value changes. The X-ray signal light acts on the semiconductor ultrafast detection chip 5 to modulate the refractive index of the semiconductor ultrafast detection chip 5, and the response process of the semiconductor ultrafast detection chip 5 to the X-ray pulse is synchronously incident to the time sequence probe light pulse on the semiconductor ultrafast detection chip 5 for reading. Since the X-ray action is very short (the laser pulse is much shorter than the chip response time, the generated X-ray pulse is also much shorter than the chip response time), the time interval during which the probe light emergent light intensity changes can be approximately equal to the chip response time.
That is, the light with different wavelengths records the refractive index change of the sample at different times, so that the spectral distribution of the time-sequenced probe light changes, and the ultra-fast response process of the semiconductor ultra-fast detection chip to the X-ray can be reflected by the spectral distribution of the time-sequenced probe light during detection, as shown in fig. 4.
Recording the region of the spectrum change (lambda)A～λB) Then, the characteristic interval (t) of the time domain under the action of the X-ray can be correspondingly obtainedA～tB) I.e., chip response time:
Tresponse to＝tB-tA＝C(λB-λA)。
The above description is only for the purpose of describing the preferred embodiments of the present invention and does not limit the technical solutions of the present invention, and any known modifications made by those skilled in the art based on the main technical concepts of the present invention fall within the technical scope of the present invention.
Claims (8)
1. The utility model provides a semiconductor material transient refractive index ultrafast detection device which characterized in that: the device comprises a high-power pulse laser (1), a first beam splitter (2), a pulse X-ray excitation unit (11), a probe light regulation and control unit (12), a second beam splitter (9) and a signal reading unit (10);
the high-power pulse laser (1) is used for generating picosecond-magnitude short pulse laser, and the wavelength of the pulse laser is larger than the absorption wavelength of the semiconductor ultrafast detection chip (5) to be detected;
the first beam splitter (2) is positioned in the emergent direction of the high-power pulse laser (1) and divides a laser beam into two beams, namely an A beam and a B beam, wherein the energy of the A beam is greater than that of the B beam;
the pulse X-ray excitation unit (11) is positioned in the emergent direction of the beam A and is used for generating X-rays for the fixed time delay, optical focusing and excitation of pulse laser and transmitting the generated X-rays to the upper surface of the semiconductor ultrafast detection chip (5) to be detected;
the probe light control unit (12) is positioned in the emergent direction of the beam B and is used for generating probe light by the controllable time delay and dispersion time expansion of the pulse laser, the probe light is reflected to the lower surface of the semiconductor ultrafast detection chip (5) to be detected through the second beam splitter (9), and the probe light and the X-ray simultaneously reach the surface of the semiconductor ultrafast detection chip to be detected;
the X-ray is incident to the semiconductor ultrafast detection chip (5) to be detected, the refractive index of the semiconductor ultrafast detection chip (5) to be detected is modulated, and the spectral intensity of probe light incident to the semiconductor ultrafast detection chip (5) is changed;
the signal reading unit (10) is used for collecting probe light reflected by the semiconductor ultrafast detection chip to be detected (5) and transmitted by the second beam splitter (9), and acquiring the response process of the semiconductor ultrafast detection chip to be detected (5) to X rays by detecting the spectral intensity change of the probe light.
2. The apparatus for detecting the ultrafast transient refractive index of a semiconductor material as claimed in claim 1, wherein: the pulse X-ray excitation unit (11) comprises a time fixed delay and focusing optical system (3) and a metal target (4) which are sequentially arranged along the transmission direction of the A light beam;
a light beam is incident to the surface of a metal target (4) at an angle of 45 degrees after being subjected to time delay by a time fixed delay and focusing optical system (3) and optical focusing, and the metal target (4) emits generated X rays to the upper surface of a semiconductor ultrafast detection chip (5) to be detected.
3. The apparatus for detecting the ultrafast transient refractive index of a semiconductor material as claimed in claim 2, wherein: the metal target (4) is a metal gold target and generates X-ray pulses with characteristic wavelength of 2.4 keV;
the metal target (4) is a metal titanium target and generates an X-ray pulse with a characteristic wavelength of 4.8 keV;
the metal target (4) is a metallic copper target, generating X-ray pulses of a characteristic wavelength of 8 keV.
4. The apparatus for detecting the ultrafast transient refractive index of a semiconductor material as claimed in any one of claims 1 to 3, wherein: the probe light modulation control unit (12) comprises a reflector (6), an adjustable stepping type delay optical system (7) and a dispersion broadening crystal (8) which are sequentially arranged along the transmission direction of the B light beam.
5. The apparatus of claim 4, wherein: the device also comprises an anti-reflection film (13) which is arranged on the upper surface of the semiconductor ultra-fast detection chip (5) to be detected and is used for increasing the anti-reflection of the probe light, and an anti-reflection film (14) which is arranged on the lower surface of the semiconductor ultra-fast detection chip (5) to be detected and is used for increasing the anti-reflection of the probe light.
6. The apparatus for detecting the ultrafast transient refractive index of a semiconductor material as claimed in claim 5, wherein: the light beam A is transmitted light, and the energy ratio is more than 99%; the B beam is reflected light.
7. The apparatus for detecting the ultrafast transient refractive index of a semiconductor material as claimed in claim 5, wherein: the signal readout unit (10) comprises a spectrometer and a data processor;
the spectrometer is used for receiving probe light reflected by the semiconductor ultrafast detection chip (5) to be detected and transmitted by the second beam splitter (9);
and the data processor obtains the response time of the semiconductor ultrafast detection chip (5) to be detected to the X-ray according to the spectral intensity change of the probe light received by the spectrometer.
8. A method for detecting the transient refractive index of a semiconductor material ultra-fast is characterized by comprising the following steps:
1) the high-power pulse laser (1) generates picosecond-magnitude short pulse laser, and the picosecond-magnitude short pulse laser is divided into two beams of light beams, namely an A light beam and a B light beam through the first beam splitter (2);
2) a light beam is incident to a pulse X-ray excitation unit (11), after time delay and optical focusing of a time fixed delay and focusing optical system (3), the light beam is incident to the surface of a metal target (4) at an angle of 45 degrees, X-rays are generated by excitation on the surface of the target, and the generated X-rays are incident to the upper surface of a semiconductor ultrafast detection chip (5) to be detected;
b, the light beam enters a probe light regulation and control unit (12), is reflected by a reflector (6), delayed by an adjustable step-type delay optical system (7), broadened in time domain of a dispersion broadening crystal (8), and reflected to the lower surface of a semiconductor ultrafast detection chip (5) to be detected by a second beam splitter (9);
meanwhile, by adjusting the adjustable stepping type delay optical system (7), the probe light and the X-ray simultaneously reach the surface of the semiconductor ultrafast detection chip (5) to be detected;
3) the refractive index of the semiconductor ultrafast detection chip (5) to be detected is modulated by the X-ray, and the response process of the semiconductor ultrafast detection chip (5) to be detected to the X-ray is synchronously incident to the probe light in the semiconductor ultrafast detection chip (5) to be detected, namely the spectral intensity of the probe light incident to the semiconductor ultrafast detection chip (5) is changed;
4) the signal reading unit (10) receives the probe light reflected by the semiconductor ultrafast detection chip to be detected (5) and transmitted by the second beam splitter (9), and the response process of the semiconductor ultrafast detection chip to be detected (5) to the X-ray is obtained by detecting the spectral intensity change of the probe light.
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