CN108572186B - Semiconductor transient X-ray nonlinear optical effect testing device and testing method thereof - Google Patents
Semiconductor transient X-ray nonlinear optical effect testing device and testing method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
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- 230000001052 transient effect Effects 0.000 title claims abstract description 19
- 239000000523 sample Substances 0.000 claims abstract description 94
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- 230000005540 biological transmission Effects 0.000 claims abstract description 6
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- 230000001360 synchronised effect Effects 0.000 claims description 10
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- 230000008859 change Effects 0.000 claims description 7
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- 239000006185 dispersion Substances 0.000 claims description 5
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- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000010183 spectrum analysis Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
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Abstract
The invention discloses a semiconductor transient X-ray nonlinear optical effect testing device and a testing method thereof, wherein the testing device comprises an X-ray source for generating X-rays, which can irradiate a semiconductor material sheet to be tested to generate nonlinear optical effect; the delay module is used for introducing a beam of probe light to irradiate the semiconductor material sheet, reflecting the probe light on the surface of the semiconductor material sheet and adjusting the transmission optical path of the probe light; the spectrometer A is used for receiving the probe light reflected by the semiconductor material sheet, the spectrometer B is used for receiving the probe light transmitted by the spectrometer B, and the test can be completed by carrying out differential contrast analysis on the spectrum finally measured by the spectrometer A and the spectrometer B. The testing device can rapidly and sensitively complete the testing of the nonlinear optical effect of the semiconductor material, has higher testing efficiency and testing precision, provides parameter basis for subsequent tests, and is convenient to operate and implement.
Description
Technical Field
The invention relates to the technical field of performance testing of semiconductor materials, in particular to a semiconductor transient X-ray nonlinear optical effect testing device and a testing method thereof.
Background
In the plasma related experiments and practical application, the X-rays are important diagnostic tools and detection objects, and the duration of the key process of some experiments is only tens to hundreds of picoseconds, so that the method has great significance for high-speed detection of the X-rays. In the experimental process, the traditional diagnostic instrument and equipment generally uses electric signals to diagnose, namely, the radiation semiconductor is irradiated by rays to generate corresponding electric signals, the change of X rays is obtained through the change of the electric signals, so that corresponding object state information is obtained, electromagnetic interference is easily caused in the diagnostic process, the accuracy of a diagnostic result is affected, and the existing equipment is difficult to realize high-speed detection of the X rays due to the fact that the electric signals are used as media.
In the prior art, a new detection mode is proposed, namely, the nonlinear optical effect of the semiconductor material caused by the X-ray is utilized, the X-ray is detected ultrafast through an optical signal, the response speed of the effect is very fast, the ultrafast detection without electromagnetic interference can be carried out, but when the detection mode is adopted, the advantages and disadvantages of the detection effect can be known only by carrying out nonlinear optical effect test on the used semiconductor material.
Disclosure of Invention
In view of the above, the invention provides a device and a method for testing nonlinear optical effects of semiconductor transient X-rays, which can rapidly and sensitively complete nonlinear optical effect testing of semiconductor materials and improve testing efficiency and precision.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
A semiconductor transient X-ray nonlinear optical effect testing device is characterized by comprising:
an X-ray source for generating X-rays and irradiating the semiconductor material sheet to be tested to generate nonlinear optical effect;
The time delay module is used for introducing a beam of probe light to irradiate the semiconductor material sheet and reflecting the probe light on the surface of the semiconductor material sheet, and can adjust the transmission optical path of the probe light;
the light splitting sheet is used for splitting the probe light introduced by the time delay module;
A spectrometer a for receiving probe light reflected by the sheet of semiconductor material;
And a spectrometer B for receiving the probe light transmitted through the beam splitter.
By adopting the structure, the nonlinear optical effect of the semiconductor material is rapidly and sensitively tested through the change of the spectrum, thereby being beneficial to the high-speed detection of the X-rays in the later stage, having simple structure and being convenient for implementation.
As preferable: the X-rays and the probe light are irradiated onto opposite side surfaces of the semiconductor material sheet, wherein a highly reflective film is plated on the side surface on which the X-rays are incident. With the above structure, the optical effect can be more obviously measured by the probe light reflected from the rear surface, and the spectrum change is clearer.
As preferable: the delay module comprises a base, wherein a sliding rail is arranged on the base along the length direction of the base, and a sliding platform in sliding fit with the sliding rail is arranged on the sliding rail;
The optical fiber probe comprises a slide rail, and is characterized in that a first reflecting mirror and a second reflecting mirror are arranged at one end of the slide rail, a third reflecting mirror and a fourth reflecting mirror are arranged on the slide platform in an erected mode, the first reflecting mirror and the third reflecting mirror are arranged in parallel, the second reflecting mirror and the fourth reflecting mirror are arranged in parallel, and probe light is sequentially reflected by the first reflecting mirror, the third reflecting mirror, the second reflecting mirror and the fourth reflecting mirror and then is incident on a beam splitter.
By adopting the scheme, the distance between the first reflecting mirror and the third reflecting mirror and the distance between the second reflecting mirror and the fourth reflecting mirror are adjusted by adjusting the position of the sliding platform, so that the adjustment of the light path transmission stroke is realized, the structure is simple, and the implementation cost is reduced.
As preferable: and dispersion glass is arranged between the delay module and the light splitting sheet. By adopting the structure, the probe light can generate linear effect when passing through the dispersion glass, thereby widening the probe light and facilitating the adjustment of synchronous incidence with X-rays.
In order to reduce the cost and facilitate the implementation, the application provides a simple X-ray generating device, wherein the X-ray source comprises a spherical target cavity, a plane target is arranged at the center of the spherical target cavity, and the semiconductor material sheet is positioned in the spherical target cavity and faces to the plane target.
A method for testing the transient X-ray nonlinear optical effect of a semiconductor is characterized in that: by adopting the semiconductor transient X-ray nonlinear optical effect testing device, a beam of probe light is introduced through the delay module, one part of the probe light is received by the spectrometer B after passing through the light splitting sheet, the other part of the probe light is reflected to the semiconductor material sheet through the light splitting sheet and is received by the spectrometer A after being reflected on the surface of the semiconductor material sheet, in the process, an X-ray source generates X-rays and irradiates the semiconductor material sheet synchronously with the probe light, and finally, the spectrums of the spectrometer A and the spectrometer B are subjected to differential comparison.
The method comprises the steps of enabling X-rays and probe light to be incident on a semiconductor material sheet, enabling the semiconductor material sheet to generate transient X-ray nonlinear optical effects, respectively measuring original probe light spectrum parameters and spectrum parameters reflected by the semiconductor material sheet through two spectrometers, and performing differential comparison to complete the test of the optical effects of the semiconductor material sheet, so that the quality of the ultrafast detection effect of the later X-rays is judged.
As preferable: before testing, firstly, a photoelectric detector is used for receiving scattered light of probe light and X-rays, peak value coincidence of the probe light and the X-rays is observed on an oscilloscope, a coarse tuning delay module is used for determining a synchronous interval of the probe light and the X-rays, and then a fine tuning delay module is used for carrying out multiple tests in the synchronous interval.
By adopting the scheme, the delay module can be roughly adjusted through the photoelectric detector, after the synchronous error range is estimated through the peak value superposition condition, the delay module is finely adjusted for a plurality of times in the synchronous interval, and a plurality of times of tests are carried out, wherein X-rays and probe light are synchronously irradiated onto the semiconductor material sheet in a plurality of times of tests, which is beneficial to saving the adjustment synchronization time, thereby improving the measurement efficiency.
As preferable: the test method also uses a second beam splitter, the probe light and the X-rays are generated by the same main laser, one beam of the main laser is split to form the probe light through the action of the second beam splitter, and the other beam of the main laser forms an auxiliary laser to irradiate on a planar target to generate the X-rays. By adopting the scheme, the measuring device is beneficial to further reducing the parts of the measuring device, reducing the occupied space of the device and the implementation cost, and simultaneously, the probe light and the X-ray are easier to adjust and synchronize.
As preferable: before using spectrometer a and spectrometer B, both were calibrated. By adopting the scheme, the measuring precision of the spectrometer is improved, and the measuring effect is ensured.
Compared with the prior art, the invention has the beneficial effects that:
the device and the method for testing the nonlinear optical effect of the semiconductor transient X-ray can rapidly and sensitively finish the test of the nonlinear optical effect of the semiconductor material, have higher test efficiency and test precision, provide parameter basis for the subsequent test and the material selection of the X-ray detector, have ingenious conception and are convenient to operate and implement.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
Fig. 2 is a schematic structural diagram of an embodiment of the present application.
Detailed Description
The invention is further described below with reference to examples and figures.
As shown in fig. 1 and 2, a semiconductor transient X-ray nonlinear optical effect testing device mainly comprises an X-ray source 9, a delay module 1, a beam splitter 3, a spectrometer A5 and a spectrometer B8, wherein the X-ray source 9 can generate X-rays and irradiate the semiconductor material sheet 4 to be tested, so that the semiconductor material sheet 4 generates nonlinear optical effect of transient X-rays, the delay module 1 can introduce a beam of probe light to irradiate the semiconductor material sheet 4 to be tested and reflect on the surface of the semiconductor material sheet 4, and the delay module 1 can adjust the transmission optical path of the probe light.
The light-splitting sheet 3 is mainly used for splitting the probe light introduced by the delay module 1, so that one part of the probe light is received by the spectrometer B8 after being transmitted by the light-splitting sheet 3, and the other part of the probe light is received by the spectrometer A5 after being reflected by the light-splitting sheet 3 and reflected again by the surface of the semiconductor material sheet 4.
In the embodiment shown in fig. 2, taking an example of generating X-rays by laser shooting, that is, the X-ray source 9 includes a spherical target cavity 90, a planar target 91 is disposed at a central position in the spherical target cavity 90, and during testing, the semiconductor material sheet 4 is disposed in the spherical target cavity 90 and is opposite to the planar target 91.
The time delay module 1 mainly comprises a base 10, wherein the base 10 is provided with a sliding rail 7 arranged along the length direction of the base, the sliding rail 7 is provided with a sliding platform 6 in sliding fit with the sliding rail 7, and the sliding platform 6 can be precisely controlled by a computer to adjust the moving step length of the sliding platform on the sliding rail 7.
The first reflector 70 and the second reflector 71 are erected at one end of the sliding rail 7, or the sliding rail is directly erected on the base 10, the third reflector 72 and the fourth reflector 73 are erected on the sliding platform 6, the first reflector 70 and the third reflector 72 are arranged in parallel, the second reflector 71 and the fourth reflector 73 are arranged in parallel, probe light is sequentially reflected by the first reflector 70, the third reflector 72, the second reflector 71 and the fourth reflector 73 and then is incident on the light splitting sheet 3 during testing, and the adjustment of the transmission optical length can be realized by adjusting the position of the sliding platform 6, namely adjusting the distance between the first reflector 70 and the third reflector 72.
In this embodiment, in order to improve the test efficiency, the dispersive glass 2 is disposed between the delay module 1 and the beam splitter 3, the probe light introduced by the delay module 1 is incident on the beam splitter 3 after passing through the action of the dispersive glass 2, and meanwhile, in order to improve the test effect, the optical path needs to be erected to ensure that the X-ray and the probe light are irradiated on two opposite side surfaces of the semiconductor material sheet 4 in the test process, and in order to improve the reflection effect of the semiconductor material sheet 4, a high reflection film is plated on a side surface of the semiconductor material sheet 4 opposite to the incidence of the X-ray, and the reflection band of the high reflection film is consistent with the band of the incident probe light.
The invention provides a testing method of a semiconductor transient X-ray nonlinear optical effect, which is implemented based on the testing device of the semiconductor transient X-ray nonlinear optical effect, and is mainly characterized in that probe light is introduced through a delay module 1, the introduced probe is widely acted by a beam splitter 3, one part of the probe light passes through the beam splitter 3 and is received by a spectrometer B8, the other part of the probe light can irradiate on a semiconductor material sheet 4 under the reflection action of the beam splitter 3, meanwhile, an X-ray source 9 is utilized to emit X-rays, an optical path and the delay module 1 are adjusted to synchronously irradiate the probe light and the X-rays on the semiconductor material sheet 1, the probe light which is incident on the semiconductor material sheet 4 is received by a spectrometer A5 after being reflected by the probe light, and finally, the spectrum formed on the spectrometer B8 and the spectrometer A5 is subjected to differential comparison.
The specific test and principle are as follows, in this embodiment, a beam of main laser 1a is used to generate probe light and X-rays, as shown in the figure, the main laser 1a is split by using a second splitter 11, a part of the main laser 1a passes through the second splitter 11 to form a secondary laser 12, and the secondary laser is incident into the spherical target cavity 90 and strikes the planar target 91, so that the secondary laser is irradiated onto the rear surface of the semiconductor material sheet 4.
The other part of the main laser 1a forms probe light 13 through the reflection action of the second light-splitting sheet 11, the probe light 13 is transmitted to the light-splitting sheet 3 through the time delay module 1, and the probe light 13 can be widened under the action of the dispersion glass 3 before entering the light-splitting sheet 3, so that synchronous incidence of the probe light 13 and X rays can be adjusted conveniently in the later period.
After the probe light 13 irradiates the light-splitting sheet 3, after part of the probe light 13 directly penetrates the light-splitting sheet 3 through the action of the light-splitting sheet 3, the part of the probe light 13 can be received by the spectrometer B8 for spectral analysis, and the other part of the probe light is reflected by the light-splitting sheet 3 and then enters the front surface of the semiconductor material sheet 4, in the embodiment, the back surface of the semiconductor material sheet 4 is plated with a high-reflection film, so that the probe light 13 entering the semiconductor material sheet 4 can penetrate the back surface of the semiconductor material sheet 4 for reflection, namely, the front and back side surfaces of the semiconductor material sheet 4 are reflected simultaneously, reflected light is emitted simultaneously, the two reflected lights interfere and then irradiate the spectrometer A5 for receiving and measuring the reflected light, the spectrometer B8 is equivalent to the spectrum of the measured reference probe light 13, and after the semiconductor material sheet 4 is subjected to the X-ray action, the nonlinear optical effect occurs in the spectrometer B8, the spectrum of the probe light 13 is changed after the probe light 13 is reflected on the surface of the semiconductor material sheet, and then the spectrometer A5 is subjected to the differential spectrum comparison.
It should be noted that the device is used for testing the transient X-ray effect on the semiconductor material sheet 4, so that the probe light 13 and the X-ray are required to be adjusted to be synchronously irradiated on the semiconductor material sheet 4 during testing, namely, when the probe light 13 and the X-ray are incident, the scattered light of the probe light 13 and the X-ray visible light is required to be received through a photoelectric detector, then the delay module 1 is coarsely regulated, and observed on an oscilloscope connected with the photoelectric detector, the peak value of the two lights has a coincidence stage, namely, the coincidence stage is visible, so that the synchronous error range of the two lights is determined, then the computer is used for accurately adjusting the moving step length of the sliding platform 6 for a plurality of times, the adjustment range is within the synchronous error range before, a plurality of times of tests are correspondingly carried out, and in the plurality of times of tests, the test, the probe light 13 and the X-ray are required to be synchronously incident on the semiconductor material sheet 4
Generally, when the incident X-ray is not strong, the nonlinear optical effect generated by the semiconductor material sheet 4 is not large, so that the intensity cover plate of the incident probe light 13 is not large, and if the reflection effect is measured by directly adopting a photoelectric detector, the result is not ideal, and then the spectrum change of the probe light 13 is obvious, so that the application adopts a spectrum measuring mode to greatly improve the test sensitivity, adopts a spectrometer A5 and a spectrometer B8 to respectively measure, and finally carries out differential comparison to carry out signal analysis, and certainly, the two needs to be calibrated conventionally before the spectrometer A5 and the spectrometer B8 are used.
Finally, it should be noted that the above description is only a preferred embodiment of the present invention, and that many similar changes can be made by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (3)
1. A semiconductor transient X-ray nonlinear optical effect testing method comprises a semiconductor transient X-ray nonlinear optical effect testing device, which comprises the following steps:
An X-ray source (9) for generating X-rays and irradiating the sheet of semiconductor material (4) to be tested to produce a nonlinear optical effect;
A delay module (1) for introducing a beam of probe light to irradiate the semiconductor material sheet (4) and being reflected on the surface of the semiconductor material sheet (4), wherein the delay module (1) can adjust the transmission optical path of the probe light;
A spectroscopic sheet (3) for spectroscopic the probe light introduced by the delay module (1);
A spectrometer a (5) for receiving probe light reflected by the sheet of semiconductor material (4);
A spectrometer B (8) for receiving the probe light transmitted through the light-splitting sheet (3);
The X-rays and the probe light irradiate on two opposite side surfaces of the semiconductor material sheet (4), wherein a high-reflection film is plated on one side surface on which the X-rays are incident, and the reflection wave band of the high-reflection film is consistent with the wave band of the incident probe light;
the X-ray source (9) comprises a spherical target cavity (90), a planar target (91) is arranged at the center of the spherical target cavity (90), and the semiconductor material sheet (4) is positioned in the spherical target cavity (90) and faces the planar target (91);
the time delay module (1) comprises a base (10), wherein a sliding rail (7) arranged along the length direction of the base (10) is arranged on the base, and a sliding platform (6) in sliding fit with the sliding rail (7) is arranged on the sliding rail;
A first reflecting mirror (70) and a second reflecting mirror (71) are arranged at one end of the sliding rail (7), a third reflecting mirror (72) and a fourth reflecting mirror (73) are arranged on the sliding platform (6), the first reflecting mirror (70) and the third reflecting mirror (72) are arranged in parallel, the second reflecting mirror (71) and the fourth reflecting mirror (73) are arranged in parallel, and probe light is sequentially reflected by the first reflecting mirror (70), the third reflecting mirror (72), the second reflecting mirror (71) and the fourth reflecting mirror (73) and then is incident on the light splitting sheet (3);
A dispersion glass (2) is arranged between the delay module (1) and the light-splitting sheet (3), probe light introduced by the delay module (1) is incident on the light-splitting sheet (3) after being acted by the dispersion glass (2),
The laser beam detector also comprises a second beam splitter (11), wherein a beam of main laser (1 a) is used for generating probe light and X-rays, the main laser (1 a) is split by the second beam splitter (11), a part of the main laser (1 a) passes through the second beam splitter (11) to form auxiliary laser (12), and the auxiliary laser is incident into the spherical target cavity (90) and is beaten onto the planar target (91) so as to generate X-rays to irradiate the rear surface of the semiconductor material sheet (4);
The other part of the main laser (1 a) forms probe light under the reflection action of the second light splitting sheet (11), and the probe light is transmitted to the light splitting sheet (3) through the time delay module (1);
The method is characterized in that: introducing a beam of probe light through a delay module (1), wherein one part of the probe light is received by a spectrometer B (8) after passing through a light splitting sheet (3), the other part of the probe light is reflected to a semiconductor material sheet (4) through the light splitting sheet (3), and is received by a spectrometer A (5) after being reflected on the surface of the semiconductor material sheet (4), in the process, an X-ray source (9) generates X-rays and irradiates the semiconductor material sheet (4) synchronously with the probe light, and finally, the spectrums of the spectrometer A (5) and the spectrometer B (8) are subjected to differential comparison;
Before testing, firstly, receiving scattered light of probe light and X-rays by using a photoelectric detector, observing the superposition condition of peak values of the probe light and the X-rays on an oscilloscope, roughly adjusting a delay module (1), determining a synchronous interval of the probe light and the X-rays, finely adjusting the delay module (1), and carrying out multiple tests in the synchronous interval;
After the probe light (13) irradiates the light splitting sheet (3), part of the probe light directly penetrates the light splitting sheet (3) under the action of the light splitting sheet (3), part of the probe light (13) can be received by the spectrometer B (8) and subjected to spectral analysis, the other part of the probe light is reflected by the light splitting sheet (3) and then enters the front surface of the semiconductor material sheet (4), a high-reflectivity film is plated on the rear surface of the semiconductor material sheet (4), the probe light (13) entering the semiconductor material sheet (4) penetrates to the rear surface of the semiconductor material sheet (4) to perform reflection, namely, the front and rear side surfaces of the semiconductor material sheet (4) are reflected simultaneously, reflected light is emitted simultaneously, the two reflected light is interfered and then irradiated to the spectrometer A (5), the spectrometer B (8) is used for receiving and measuring the spectrum of the probe light, the semiconductor material sheet (4) is subjected to the X-ray effect, the nonlinear optical effect occurs inside the probe light (13) after the semiconductor material sheet (4) is subjected to the X-ray effect, the probe light (13) is reflected on the surface of the semiconductor material sheet, and the spectrometer A (5) is subjected to the spectrum change, and the spectrometer (8) is subjected to the spectrum change.
2. The method for testing the transient X-ray nonlinear optical effect of a semiconductor according to claim 1, wherein: the testing method also uses a second beam splitter (11), the probe light and the X-rays are generated by the same main laser, the main laser is acted by the second beam splitter (11) to split one beam to form the probe light, and the other beam to form an auxiliary laser (12) to irradiate on a planar target (91) to generate the X-rays.
3. The method for testing the transient X-ray nonlinear optical effect of a semiconductor according to claim 1, wherein: before using the spectrometer A (5) and the spectrometer B (8), the two were calibrated.
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