CN108572186A - Semiconductor transient state X-ray nonlinear optical effect test device and its test method - Google Patents
Semiconductor transient state X-ray nonlinear optical effect test device and its test method Download PDFInfo
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- CN108572186A CN108572186A CN201810814028.7A CN201810814028A CN108572186A CN 108572186 A CN108572186 A CN 108572186A CN 201810814028 A CN201810814028 A CN 201810814028A CN 108572186 A CN108572186 A CN 108572186A
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- optical effect
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- nonlinear optical
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
- G01N2223/1016—X-ray
Abstract
The invention discloses a kind of semiconductor transient state X-ray nonlinear optical effect test device and its test methods, include the x-ray source for generating X-ray, can be irradiated to semi-conducting material on piece to be tested, it is made to generate nonlinear optical effect；It is irradiated to the time delay module of the semiconductor material slices for introducing a branch of probe light, and is reflected on the semiconductor material slices surface, the transmission light path of the probe light can be adjusted in time delay module；Light splitting piece for being divided to the probe light that time delay module introduces, spectrometer A for receiving the probe light reflected through semiconductor material slices, spectrometer B for receiving the probe light transmitted through light splitting piece carries out difference comparative analysis by the spectrum finally surveyed to spectrometer A spectrometers B and test can be completed.Can be with the test of the completion semi-conducting material nonlinear optical effect of rapid sensitive, and there is higher testing efficiency and measuring accuracy, provide parameter foundation, implementation easy to operation for follow-up test.
Description
Technical field
The present invention relates to semiconductor material performance technical field of measurement and test, and in particular to a kind of semiconductor transient state X-ray is non-thread
Property optical effect test device and its test method.
Background technology
In the experiment of plasma correlation with practical application scene, X-ray is important diagnostic tool and detected object, and
Some experiment critical process duration are only tens to hundreds of picoseconds, therefore have important meaning to X-ray progress high speed detection
Justice.During the experiment, conventional diagnostic instrument and equipment typically uses electric signal and is diagnosed, i.e. ray radiation semiconductor,
Corresponding electric signal is generated, corresponding states of matter information is obtained by the variation of electric signal obtains the variation of X-ray, was diagnosed
It is easy in journey by electromagnetic interference, it is existing to set to influence the accuracy of diagnostic result, also, due to using electric signal as medium
The standby high speed detection being also difficult to realize to X-ray.
A kind of new detection mode is proposed in the prior art, that is, utilizes semi-conducting material nonlinear optical caused by X-ray
Effect is learned, ultrafast detection is carried out to X-ray by optical signal, and this effect response speed is very fast, can carry out not by electricity
The ultrafast detection of magnetic disturbance, but when this detection mode of use, need first to carry out nonlinear optics to semi-conducting material used
Effect tests the quality that just can know that Effect on Detecting.
Invention content
In view of this, a kind of semiconductor transient state X-ray nonlinear optical effect test device of present invention offer and its test
Method is capable of the nonlinear optical effect test of the completion semi-conducting material of rapid sensitive, improves testing efficiency and precision.
To achieve the above object, technical solution of the present invention is as follows：
A kind of semiconductor transient state X-ray nonlinear optical effect test device, it is critical that including：
X-ray source is used to generate X-ray, and is irradiated to semi-conducting material on piece to be tested, keeps its generation non-linear
Optical effect；
Time delay module is used to introduce a branch of probe light and is irradiated to the semi-conducting material on piece, and in the semiconductor material
Web surface is reflected, and the transmission light path of the probe light can be adjusted in the time delay module；
Light splitting piece is used to be divided the probe light that time delay module introduces；
Spectrometer A is used to receive the probe light reflected through semiconductor material slices；
Spectrometer B is used to receive the probe light transmitted through light splitting piece.
Using the above structure, pass through the nonlinear optics for testing out semi-conducting material generation of the variation rapid sensitive of spectrum
Effect, it is simple in structure to be conducive to the high speed detection that the later stage carries out X-ray, it is convenient to carry out.
As preferred：The X-ray and probe light expose in the opposite both side surface of the semiconductor material slices, wherein
It is coated with high-reflecting film on a side surface of X-ray incidence.Using the above structure, by from the probe light reflected below, Ke Yigeng
Optical effect significantly is measured, spectrum change becomes apparent from.
As preferred：The time delay module includes pedestal, has the sliding rail being arranged along its length, the cunning on the pedestal
There is the sliding platform being slidably matched with it on rail；
One end of the sliding rail is provided with the first speculum and the second speculum, and it is anti-to be provided with third on the sliding platform
Mirror and the 4th speculum, first speculum and the setting of third mirror parallel are penetrated, the second speculum and the 4th speculum are flat
Row setting, the probe light enter after the reflection of the first speculum, third speculum, the second speculum and the 4th speculum successively
It is incident upon on light splitting piece.
Using above scheme, by adjusting the position of sliding platform, that is, the first speculum and third speculum distance are realized,
And second distance between speculum and the 4th speculum adjust, that is, realize the adjusting of optic path stroke, it is simple in structure, reduce
Implementation cost.
As preferred：Dispersive glass is equipped between the time delay module and light splitting piece.Using the above structure, probe light passes through
Linear effect can be generated when dispersive glass, to broaden probe light, be conveniently adjusted its incidence synchronous with X-ray.
It is convenient to carry out to reduce cost, a kind of simple X-ray generator, the x-ray source are proposed in the application
Including Spherical Target chamber, it is equipped with flat target at the center of the Spherical Target chamber, the semiconductor material slices are located at Spherical Target intracavitary, and just
To flat target.
A kind of its test method of semiconductor transient state X-ray nonlinear optical effect, key are：Using above-mentioned semiconductor
Transient state X-ray nonlinear optical effect test device, a branch of probe light is introduced by time delay module, which penetrates
It is received by spectrometer B after light splitting piece, another part reflexes to semi-conducting material on piece through light splitting piece, in semiconductor material slices table
Face is received after reflecting by spectrometer A, and in the process, x-ray source generates X-ray and exposes to half with probe phototiming
In conductor material piece, differential pair ratio finally is carried out to the spectrum of spectrometer A and spectrometer B.
By making X-ray and probe light be incident to semi-conducting material on piece, make semiconductor material slices that transient state X-ray occur non-
Linear optics effect, then initial probe light spectrum parameter is measured respectively by two spectrometers, and it is anti-through semiconductor material slices
Spectrum parameter after penetrating, then test of the differential pair than semiconductor material slices optical effect can be completed, to later stage X-ray
Ultrafast Effect on Detecting quality judges.
As preferred：Before test, the scattering light of probe light and X-ray is received first with photodetector, and is being shown
Both observations peak value overlaps situation on wave device, and coarse adjustment time delay module determines probe light and X-ray synchronization interval, then accurate adjustment delay
Module is repeatedly tested in this synchronization interval.
Using above scheme, coarse adjustment can be carried out to time delay module by photodetector, situation, estimation are overlapped by peak value
After synchronous error range, then in this synchronization interval, multiple accurate adjustment time delay module is repeatedly tested, if wherein must have
In dry test X-ray and probe light be synchronize expose to semi-conducting material on piece, be conducive to save adjustment synchronization time, from
And improve measurement efficiency.
As preferred：It is also used in the test method to the second light splitting piece, the probe light and X-ray are by same main laser
It generates, the main laser is acted on by the second light splitting piece, separates a branch of formation probe light, and another beam forms secondary laser irradiation
To flat target, X-ray is generated.Using above scheme, be conducive to be further reduced measuring device component, reduce device and occupy sky
Between and implementation cost, while be also easier to adjust keep probe light synchronous with X-ray.
As preferred：Before using spectrometer A and spectrometer B, first the two is demarcated.Using above scheme, have
Conducive to the measurement accuracy of raising spectrometer, it is ensured that measurement effect.
Compared with prior art, the beneficial effects of the invention are as follows：
It, can using semiconductor transient state X-ray nonlinear optical effect test device provided by the invention and its test method
With the test of the completion semi-conducting material nonlinear optical effect of rapid sensitive, and with higher testing efficiency and test essence
Degree, provides parameter foundation for follow-up test and the selection of X-ray detector, is skillfully constructed, implementation easy to operation.
Description of the drawings
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is a kind of example structure schematic diagram of the application.
Specific implementation mode
The invention will be further described with attached drawing with reference to embodiments.
As depicted in figs. 1 and 2, a kind of semiconductor transient state X-ray nonlinear optical effect test device includes mainly X
Radiographic source 9, time delay module 1, light splitting piece 3, spectrometer A5 and spectrometer B8, wherein x-ray source 9 can generate X-ray, and be irradiated to
In semiconductor material slices 4 to be tested, make semiconductor material slices 4 that the nonlinear optical effect of transient state X-ray, time delay module occur
1, which can introduce a branch of probe light, is irradiated in semiconductor material slices 4 to be tested, and occurs instead on the surface of semiconductor material slices 4
It penetrates, and the transmission light path for entering probe light can be adjusted in time delay module 1.
Light splitting piece 3 is mainly used for being divided the probe light that time delay module 1 introduces, and keeps part of it saturating through light splitting piece 3
It is received by spectrometer B8 after penetrating, and another part is incident upon the surface hair of semiconductor material slices 4 after the reflection of light splitting piece 3
It can be received by spectrometer A5 after raw secondary reflection again.
In embodiment as shown in Figure 2, by taking laser target shooting generates X-ray as an example, i.e., x-ray source 9 includes Spherical Target chamber 90,
Center is equipped with flat target 91 in the Spherical Target chamber 90, and in test process, semiconductor material slices 4 are located in Spherical Target chamber 90,
And face flat target 91 is arranged.
Time delay module 1 includes mainly pedestal 10, has the sliding rail 7 being arranged along its length on pedestal 10, on the sliding rail 7
With the sliding platform 6 being slidably matched with it, wherein sliding platform 6 can be precisely controlled by computer adjusts it on sliding rail 7
Moving step length.
One end of sliding rail 7 is provided with the first speculum 70 and the second speculum 71, can also be and is directly erected on pedestal 10,
Third speculum 72 and the 4th speculum 73 are provided on sliding platform 6, the first speculum 70 is parallel with third speculum 72 to be set
It sets, the second speculum 71 is arranged in parallel with the 4th speculum 73, and probe light is reflected through the first speculum 70, third successively when test
It is incident on light splitting piece 3 after the reflection of mirror 72, the second speculum 71 and the 4th speculum 73, by adjusting the position of sliding platform 6
It sets, that is, adjusts distance between the first speculum 70 and third speculum 72, can realize the adjusting of transmission light path length.
In the present embodiment, to improve testing efficiency, therefore it is equipped with dispersive glass 2 between time delay module 1 and light splitting piece 3, prolongs
When effect of the probe light through dispersive glass 2 that introduces of module 1 after reenter and be incident upon on light splitting piece 3, at the same time, tested to improve
Effect, therefore during the test, the erection of light path need to can ensure that X-ray and probe light are irradiated in semiconductor material slices 4 relatively
Both side surface on, and in order to improve the reflecting effect of semiconductor material slices 4, face X-ray is incident in semiconductor material slices 4
One side surface is coated with high-reflecting film, and the wave band of the reflected waveband and incident probe light of high-reflecting film is consistent.
Its test method of semiconductor transient state X-ray nonlinear optical effect proposed by the present invention is partly led based on above-mentioned
Body transient state X-ray nonlinear optical effect test device and implement, mainly pass through time delay module 1 introduce probe light, introduce
Probe extensively acted on through light splitting piece 3, a part by spectrometer B8 through being received after light splitting piece 3, and another part is through light splitting piece 3
Reflex can expose in semiconductor material slices 4, while send out X-ray using x-ray source 9, and adjust light path and delay mould
Block 1 make probe light and X-ray synchronize expose in semiconductor material slices 1, the probe light being incident in semiconductor material slices 4 passes through
It is that spectrometer A5 is received again after reflecting, and finally carries out differential pair ratio i.e. to the spectrum formed on spectrometer B8 and spectrometer A5
It can.
Its specific test and principle are as follows, generate probe light and X-ray using a branch of main laser 1a in the present embodiment, such as
Shown in figure, main laser 1a is divided using the second light splitting piece 11, a main laser 1a parts penetrate shape after the second light splitting piece 11
It at secondary laser 12, is incident in Spherical Target chamber 90, and gets on flat target 91, it is made to generate x-ray bombardment to semi-conducting material
In the rear surface of piece 4.
And reflex of the another part of main laser 1a through the second light splitting piece 11 forms probe light 13, probe light 13 passes through
Time delay module 1 is transmitted on light splitting piece 3,, can be to probe light also by the effect of dispersive glass 3 before entering light splitting piece 3
13 play the role of broadening, its incidence synchronous with X-ray is adjusted convenient for the later stage.
Probe light 13 is irradiated to after light splitting piece 3, the effect through light splitting piece 3, after being partly directed through light splitting piece 3, is utilized
Spectrometer B8 can receive the part probe light 13, and carry out spectrum analysis, after reflex of the another part by light splitting piece 3,
It is incident on the front surface of semiconductor material slices 4, and in the present embodiment, because the rear surface in semiconductor material slices 4 is coated with height instead
Film, therefore the probe light 13 for being incident to semiconductor material slices 4 can penetrate to the rear surface of semiconductor material slices 4 and reflex occurs,
Reflex occurs on the front and rear sides surface of semiconductor material slices 4 simultaneously, is simultaneously emitted by reflected light, two reflected light hairs
It exposes at spectrometer A5 after raw interference, is measured for its reception, spectrometer B8 is the equal of the probe light 13 of the benchmark measured
Spectrum, and semiconductor material slices 4 by X-ray after being acted on, it is internal that nonlinear optical effect occurs, therefore probe light 13 is at it
After surface is reflected, the spectrum for the probe light 13 that spectrometer A5 is measured has occurred and that variation, at this time again to spectrometer A5 and
Spectrometer B8 carries out differential pair ratio.
It should be noted that present apparatus test is that transient state X-ray acts on semiconductor material slices 4, therefore is needed in test
Adjust probe light 13 and X-ray synchronize be irradiated in semiconductor material slices 4, i.e., when probe light 13 and X-ray incidence, need to first lead to
Cross the scattering light that photodetector receives two kinds of visible lights of probe light 13 and X-ray, then coarse adjustment time delay module 1, and with light
It is observed on the connected oscillograph of electric explorer, it can be seen that the peak value of two kinds of light has the coincidence stage to indicate feasible, determines in this way
Then both one synchronous error range to the moving step length of sliding platform 6 repeatedly precisely adjust by computer again
Whole, adjusting range accordingly carries out test of many times within the scope of synchronous error before, during test of many times, then must have
Probe light 13 and X-ray in testing several times be synchronize be incident in semiconductor material slices 4
Usually because when incident X-ray is not strong, the nonlinear optical effect that semiconductor material slices 4 generate is little, in this way
The intensity cover board of incident probe light 13 is little, and if directly using photodetector come when measuring its reflecting effect, as a result
Undesirable, then the spectrum change of probe light 13 is but more apparent, therefore in the application by the way of measure spectrum, it can carry significantly
High measurement sensitivity is measured respectively using spectrometer A5 and spectrometer B8, is finally carried out differential pair ratio and is done signal analysis i.e.
Can, certainly to ensure the reliability of test result, therefore before using spectrometer A5 and spectrometer B8, the two need to be carried out conventional
Calibration.
Finally, it should be noted that foregoing description is only the preferred embodiment of the present invention, the ordinary skill people of this field
Member under the inspiration of the present invention, without prejudice to the purpose of the present invention and the claims, can make table as multiple types
Show, such transformation is each fallen within protection scope of the present invention.
Claims (9)
1. a kind of semiconductor transient state X-ray nonlinear optical effect test device, which is characterized in that including：
X-ray source (9), is used to generate X-ray, and is irradiated in semiconductor material slices to be tested (4), keeps its generation non-thread
Property optical effect；
Time delay module (1) is used to introduce a branch of probe light and is irradiated to the semiconductor material slices (4), and in the semiconductor
Material piece (4) surface is reflected, and the transmission light path of the probe light can be adjusted in the time delay module (1)；
Light splitting piece (3) is used to be divided the probe light that time delay module (1) introduces；
Spectrometer A (5) is used to receive the probe light reflected through semiconductor material slices (4)；
Spectrometer B (8) is used to receive the probe light transmitted through light splitting piece (3).
2. semiconductor transient state X-ray nonlinear optical effect test device according to claim 1, it is characterised in that：Institute
It states X-ray and probe light exposes in the opposite both side surface of the semiconductor material slices (4), wherein the one of X-ray incidence
High-reflecting film is coated on side surface.
3. semiconductor transient state X-ray nonlinear optical effect test device according to claim 1 or 2, it is characterised in that：
The time delay module (1) includes pedestal (10), has the sliding rail (7) being arranged along its length, the sliding rail on the pedestal (10)
(7) there is the sliding platform (6) being slidably matched with it on；
One end of the sliding rail (7) is provided with the first speculum (70) and the second speculum (71), sliding platform (6) restocking
Equipped with third speculum (72) and the 4th speculum (73), first speculum (70) is parallel with third speculum (72) to be set
It sets, the second speculum (71) is arranged in parallel with the 4th speculum (73), and the probe light is successively through the first speculum (70), third
It is incident on light splitting piece (3) after the reflection of speculum (72), the second speculum (71) and the 4th speculum (73).
4. semiconductor transient state X-ray nonlinear optical effect test device according to claim 3, it is characterised in that：Institute
It states and is equipped with dispersive glass (2) between time delay module (1) and light splitting piece (3).
5. semiconductor transient state X-ray nonlinear optical effect test device according to claim 1, it is characterised in that：Institute
It includes Spherical Target chamber (90) to state x-ray source (9), and flat target (91), the semiconductor are equipped at the center of the Spherical Target chamber (90)
Material piece (4) is located in Spherical Target chamber (90), and face flat target (91).
6. a kind of its test method of semiconductor transient state X-ray nonlinear optical effect, it is characterised in that：Using above-mentioned semiconductor wink
State X-ray nonlinear optical effect test device introduces a branch of probe light by time delay module (1), and a probe light part is thoroughly
Light splitting piece (3) to be crossed to be received by spectrometer B (8) afterwards, another part is reflexed to through light splitting piece (3) in semiconductor material slices (4),
Semiconductor material slices (4) surface is received after reflecting by spectrometer A (5), and in the process, x-ray source (9) generates X and penetrates
Line is simultaneously exposed to probe phototiming in semiconductor material slices (4), finally to the spectrum of spectrometer A (5) and spectrometer B (8) into
Row differential pair ratio.
7. semiconductor transient state X-ray nonlinear optical effect test method according to claim 6, it is characterised in that：It surveys
Before examination, the scattering light of probe light and X-ray, and both observations peak value weight on oscillograph are received first with photodetector
Situation is closed, coarse adjustment time delay module (1) determines probe light and X-ray synchronization interval, then accurate adjustment time delay module (1), in this synchronization zone
It is interior repeatedly to be tested.
8. semiconductor transient state X-ray nonlinear optical effect test method according to claim 6, it is characterised in that：It should
It is also used in test method to the second light splitting piece (11), the probe light and X-ray are generated by same main laser, the main laser
It is acted on by the second light splitting piece (11), separates a branch of formation probe light, another beam forms secondary laser (12) and exposes to plane
On target (91), X-ray is generated.
9. the semiconductor transient state X-ray nonlinear optical effect test method according to any one of claim 6 to 8,
It is characterized in that：Before using spectrometer A (5) and spectrometer B (8), first the two is demarcated.
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| JPH10197909A (en) * | 1997-01-07 | 1998-07-31 | Hitachi Ltd | Optical switching device |
| JP2000214082A (en) * | 1999-01-27 | 2000-08-04 | Hamamatsu Photonics Kk | Measuring apparatus for nonlinear optical response of medium |
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