KR20120012391A - Sample inspection device and sample inspection method - Google Patents

Abstract

PURPOSE: A sample inspection device and a sample inspection method are provided to efficiently inspect a sample regardless of the kind of the sample by integrating multiple kinds of measurement methods. CONSTITUTION: A sample inspection device comprises an ellipsometer unit(13), an X-ray measurement unit(23), and an analysis unit(4). The ellipsometer unit sends a linearly polarized light to a sample(6) and receives the light reflected from the sample. The X-ray measurement unit irradiates an X-ray to the sample and measures the X-ray from the sample. The analysis unit calculates the thickness of the sample based on the measured results from the ellipsometer unit and the X-ray measurement unit.

Description

Sample inspection device and sample inspection method {SAMPLE INSPECTION DEVICE AND SAMPLE INSPECTION METHOD}

The present invention relates to a sample inspection apparatus and a sample inspection method for measuring characteristics including the thickness of a sample.

BACKGROUND ART Semiconductor devices such as solar cell devices have devices having a multilayer structure in which a plurality of layers having different compositions are stacked. During or after the manufacturing process of such an element, there exists a request to measure the thickness of each layer and other characteristics. An apparatus for inspecting a sample by measuring the thickness of the sample and other characteristics is an ellipsometer. An ellipsometer applies linearly polarized light to a sample, measures a change in polarization state between incident light and reflected light on the sample, and measures the thickness and refractive index of the sample based on the change in the polarization state. Realize ellipsometry. Patent Literature 1 discloses a technique for measuring the thickness of a sample with an ellipsometer. Another sample inspection apparatus includes a fluorescence X-ray analyzer that irradiates X-rays to a sample and analyzes fluorescence X-rays generated from the sample. If the composition of the sample is already known, the thickness of the sample can be measured from the intensity of the fluorescent X-rays.

Patent Document 1: Japanese Patent Application Laid-Open No. 2005-233928

When a sample having a multilayer structure contains a transparent layer such as a gate insulating layer, it is possible to measure the thickness of the transparent layer with an ellipsometer. However, when a sample contains metal layers, such as a wiring layer, since light cannot penetrate into the inside of a metal layer, the thickness of a metal layer cannot be measured with an ellipsometer. On the other hand, the fluorescent X-ray analyzer can measure the thickness of the metal layer. However, depending on the composition of the sample, there is a sample including a layer which is difficult to measure the thickness with a fluorescent X-ray analyzer. For example, in a sample in which a transparent layer, which is a gate insulating layer containing silicon dioxide, is formed on a silicon substrate, it is difficult to distinguish between the fluorescent X-rays of silicon from the silicon substrate and the fluorescent X-rays of silicon from the transparent layer. It is difficult to measure the thickness of each layer individually. Thus, there is a problem that the appropriate sample inspection apparatus differs depending on the sample, and it is necessary to separate and use the sample inspection apparatus according to the sample. In particular, in order to measure the characteristics of the multilayer sample, it is necessary to use a plurality of sample inspection apparatuses, and there is a problem that it takes time and effort.

This invention is made | formed in view of such a situation, and the objective is to provide the sample test | inspection apparatus and sample test | inspection method which do not restrict | limit the testable sample by combining several types of measuring methods.

A sample inspection apparatus according to the present invention includes an ellipsometer portion for measuring linearly polarized light incident on a sample to receive reflected light from the sample, measuring a change in polarization between the incident light and the reflected light, and irradiating the sample with X-rays. An X-ray measuring unit for measuring the X-rays from the sample, and an analysis unit for performing the analysis for obtaining the thickness of the sample based on the measurement results in the ellipsometer unit or the X-ray measuring unit Device.

In the sample inspection device according to the present invention, the analysis unit includes a thickness calculation unit for calculating a thickness of the sample based on the measurement result in the X-ray measuring unit, a calculation of the measurement result and the thickness of the sample in the ellipsometer unit. It is characterized by having an optical characteristic calculation part which calculates the optical characteristic of a sample based on a result.

The sample inspection apparatus according to the present invention further includes an incidence position adjusting unit for adjusting the position at which the linearly polarized light is incident on the ellipsometer section so that the linearly polarized light is incident on any one layer of the multilayer sample when the sample is a multilayer sample. The analysis unit includes: a first calculation unit configured to calculate a thickness of the one layer on which the ellipsometer unit has incident linearly polarized light based on the measurement result of the ellipsometer unit; And a second calculation unit for calculating the thickness of another layer in the multilayer sample based on the measurement result of.

The sample inspection apparatus according to the present invention further includes a Raman scattered light measuring unit configured to measure Raman scattered light generated from the sample by injecting monochromatic light into the sample, wherein the analyzing unit comprises a sample based on a measurement result of the Raman scattered light measuring unit. It further comprises a structural characteristic calculation unit for calculating the structural characteristics of.

The sample inspection method according to the present invention includes an ellipsometer portion for receiving linearly polarized light into a flat sample, receiving reflected light from the sample, and measuring a change in polarization between the incident light and the reflected light, and an X-ray on the sample. Using a sample inspection device equipped with an X-ray measuring unit for measuring X-rays from the sample by calculating the X-rays, calculating the thickness of the sample based on the measurement result in the X-ray measuring unit, and measuring the result at the ellipsometer unit. And calculating the optical characteristics of the sample based on the calculation result of the thickness of the sample.

In the sample inspection method according to the present invention, when the sample is a multilayer sample, the change in polarization between incident light and reflected light is measured for any one layer of the multilayer sample in the ellipsometer section, and the X-ray The measuring unit measures the X-rays from the multilayer sample, calculates the thickness of the one layer based on the measurement result in the ellipsometer unit, and the multilayer sample based on the measurement result in the X-ray measuring unit. It is characterized by calculating the thickness of another layer.

In the present invention, the sample inspection device includes an ellipsometer portion and an X-ray measuring portion, and measures the thickness of the sample based on the measurement results in the ellipsometer portion or the X-ray measuring portion. Therefore, for samples that can be used for analysis using X-rays such as fluorescence X-ray analysis, the thickness of the sample is measured using X-rays, and for samples that are difficult to use for analysis using X-rays, the sample is ellipsomitri. The thickness of can be measured.

In the present invention, the sample inspection device measures the thickness of the sample by analysis using X-rays, and measures optical characteristics such as the refractive index of the sample based on the measurement result of the ellipsometer part and the measured thickness of the sample. . Therefore, unlike the ellipsometer alone, each of the optical properties and the thickness of the sample can be measured independently.

In addition, in this invention, a sample inspection apparatus can measure thickness with the ellipsomite about arbitrary one layer in a multilayer sample, and can measure thickness by the analysis using X-ray about the other layer. Measurement of the thickness of each layer can also be performed simultaneously.

In addition, in the present invention, the sample inspection apparatus further includes a Raman scattered light measuring unit, and can separate structural characteristics such as crystallinity of the sample by Raman scattered light analysis separately from the analysis using ellipsomitri and X-rays.

In this invention, the thickness of a sample can be measured using the appropriate method corresponding to a sample. Since it is not necessary to separate and use a sample test apparatus according to a sample, this invention exhibits the outstanding effect, such as the time and effort at the time of testing a sample become simple.

FIG. 1: is a schematic diagram which shows the structure of the sample inspection apparatus which concerns on Embodiment 1. FIG.
2 is a schematic cross-sectional view showing an example of a sample.
3 is a schematic diagram showing the configuration of a sample inspection device according to a second embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated concretely based on drawing which shows embodiment.

(Embodiment 1)

FIG. 1: is a schematic diagram which shows the structure of the sample inspection apparatus which concerns on Embodiment 1. FIG. The sample inspection apparatus includes a sample stage 51 on which the sample 6 is placed, an incident portion 11 that causes linearly polarized light to enter the sample 6 on the sample stage 51, and the incident light is a sample ( A reflected light receiving unit 12 for receiving the reflected light reflected by 6) is provided. In FIG. 1, incident light and reflected light are shown by the broken arrow. The incident part 11 is an optical system including a white light source such as a xenon lamp, a slit, and a polarizer for converting white light into linearly polarized light. The reflected light receiving unit 12 is an optical system including a phase modulator for modulating the phase of the reflected light, a analyzer, a spectroscope for spectroscopy of the light passing through the analyzer, and a photodetector for detecting the spectroscopic light. . The reflected light receiving unit 12 is connected to an analyzing unit 13 for analyzing the light reception result of the reflected light in the reflected light receiving unit 12.

The reflected light receiving unit 12 outputs the detection intensity of light corresponding to the phase modulation to the analyzer 13 for each of the spectroscopic wavelengths. The analysis unit 13 has a phase difference Δ and s polarization and p polarization from the detection intensity of the light corresponding to the modulation of the phase to the polarization component p polarization parallel to the polarization component s polarization perpendicular to the incident surface of the sample 6. The reflection amplitude ratio Ψ to and is measured for each wavelength. Δ and Ψ are measured values in ellipsomtri. In this way, the analysis unit 13 acquires the wavelength change of Δ and Ψ of the sample 6. The incident part 11, the reflected light receiving part 12, and the analysis part 13 test | inspect the sample 6 by the ellipsomite corresponding to the ellipsomter part in this invention.

The sample inspection apparatus includes an optical system (not shown) for irradiating the sample 6 with the X-ray source 21, the X-rays generated by the X-ray source 21, and the fluorescent X-rays generated from the sample 6 by X-ray irradiation. A fluorescence X-ray detector 22 for detecting is further provided. At least the X-ray source 21, the sample stage 51, and the fluorescent X-ray detection unit 22 are housed in a case not shown which shields the X-rays. In FIG. 1, the X-ray and the fluorescent X-ray irradiated with the sample 6 are shown by the solid arrow. The X-ray source 21 is an X-ray tube which generates X-rays by colliding an acceleration electron with a metal target. The fluorescent X-ray detector 22 is disposed at a position capable of detecting the fluorescent X-rays generated from the sample 6. The fluorescent X-ray detector 22 includes a detection element such as a proportional counter or a semiconductor detector. An fluorescence X-ray detector 22 is connected to an analyzer 23 for analyzing the detection result of fluorescence X-rays.

The fluorescent X-ray detector 22 outputs an electrical signal proportional to the energy of the fluorescent X-ray incident on the detection element to the analyzer 23. The analyzing unit 23 selects an electric signal from the fluorescence X-ray detector 22 corresponding to the signal intensity and counts an electric signal of each signal intensity, so that the relationship between the wavelength of the fluorescence X-ray and the count number, that is, the fluorescence X Acquire the spectrum of the line. The X-ray source 21, the fluorescent X-ray detection unit 22, and the analysis unit 23 correspond to the X-ray measuring unit in the present invention to inspect the sample 6 by fluorescence X-ray analysis. In addition, although the optical path of the light used by the ellipsomite and the optical path of the X-ray used by fluorescence X-ray analysis are shown on the same plane in FIG. It may be in the form.

The sample inspection apparatus includes a laser light source 31, an optical system (not shown) for irradiating the laser light from the laser light source 31 approximately perpendicularly to the sample 6, and a Raman generated from the sample 6 by irradiation of the laser light. A beam splitter 34 for separating the scattered light and a Raman scattered light detector 32 are further provided. By irradiating the laser beam 6 to the sample 6, the Raman scattered light excited by the laser light is generated from the sample 6. The Raman scattered light is separated from the laser light in the beam splitter 34 and enters into the Raman scattered light detector 32. In FIG. 1, the laser light and Raman scattered light irradiated to the sample 6 are shown by the dashed-dotted arrow. The Raman scattered light detector 32 is an optical system including an optical filter, a spectrometer for spectroscopic raman scattered light, and a photodetector for detecting spectroscopic light. An analysis unit 33 for analyzing the detection result of the Raman scattered light is connected to the Raman scattered light detection unit 32.

The Raman scattered light detector 32 outputs the detection intensity of the Raman scattered light to the analyzer 33 for each of the spectroscopic wavelengths. The analyzer 33 acquires the relationship between the wavelength of the Raman scattered light and the detection intensity, that is, the spectrum of the Raman scattered light. The laser light source 31, the beam splitter 34, the Raman scattered light detector 32, and the analyzer 33 perform inspection of the sample 6 by Raman scattered light analysis in response to the Raman scattered light measuring unit in the present invention. Do it.

The drive unit 52 which moves the sample stand 51 up and down using the motor etc. is connected to the sample stand 51. The driving unit 52 moves the sample stage 51 up and down, thereby moving the sample 6 up and down, and the focal position and the laser light source (in the sample 6 of the linearly polarized light incident on the incident portion 11). 31) the focus position in the sample 6 of the laser beam irradiated can be adjusted. When the sample 6 has a multilayer structure, the drive part 52 can adjust a focus position so that linearly polarized light or a laser beam may inject into the layer used as the measurement object in the sample 6. Moreover, the drive part 52 can change the layer which is a measurement object of ellipsomite and Raman scattering light analysis by moving the focal position in the sample 6.

The analyzing units 13, 23, 33, and the driving unit 52 are connected to the analyzing unit 4. The analysis unit 4 includes an interface for inputting and outputting data, an input unit for inputting instructions from a user, an operation unit for performing various operations, a memory for storing information and programs required for the operation, and a printer for outputting an analysis result. It is configured to include an output unit. The analysis unit 13 outputs the wavelength change of Δ and Ψ of the sample 6 to the analysis unit 4, the analysis unit 23 outputs the spectrum of the fluorescent X-rays to the analysis unit 4, the analysis unit ( 33) outputs the spectrum of the Raman scattered light to the analyzer 4. The analyzer 4 also has a function of controlling the operation of the driver 52.

2 is a schematic cross-sectional view showing an example of the sample 6. The sample 6 shown in FIG. 2 is a solar cell element of a multilayer structure. The sample 6 is laminated with a metal metal layer 64 made of metal, a p-type layer 63 made of a p-type semiconductor, an n-type layer 62 made of an n-type semiconductor, and a transparent layer 61. The metal layer 64 is a back electrode made of metal such as Cu or Mo. The transparent layer 61 is a transparent electrode made of ZnO, ITO, or the like. The p-type layer 63 and the n-type layer 62 are made of a semiconductor such as polycrystalline silicon, amorphous silicon, or a compound semiconductor, and are light absorbing layers of a solar cell element. Although briefly shown in FIG. 2, the actual solar cell device includes more layers. Moreover, in this invention, it is also possible to test the sample of a further structure.

The thickness of the transparent layer 61 in the sample 6 shown in FIG. 2 is considered. When the composition of the transparent layer 61 is different from the n-type layer 62, the p-type layer 63, and the metal layer 64, the thickness can be measured using fluorescence X-ray analysis. At this time, the X-ray source 21 irradiates X-rays to the sample 6, the fluorescent X-ray detector 22 detects the fluorescent X-rays from the sample 6, and the analysis unit 23 the spectrum of the fluorescent X-rays Get. The analysis unit 4 extracts the fluorescent X-ray intensity of the element not included in the other layer among the elements included in the transparent layer 61 from the spectrum of the fluorescent X-rays, and extracts the extracted X-ray intensity and the already known The process of calculating the thickness of the transparent layer 61 based on the density | concentration in the transparent layer 61 is performed.

In addition, when the element in the transparent layer 61 is contained in the frozen layer of the n-type layer 62, the p-type layer 63, and the metal layer 64, the measurement of thickness using fluorescence X-ray analysis is difficult, Measurement of thickness using a tree is possible. The drive part 52 moves the sample stage 51 up and down to position the focus of the linearly polarized light incident on the incident part 11 on the transparent layer 61. The incident part 11 enters the linearly polarized light into the transparent layer 61 of the sample 6, receives the reflected light from the transparent layer 61 from the reflected light receiving part 12, and the analysis part 13 transmits the transparent layer 61. Acquire wavelength changes of Δ and Ψ. The analysis unit 4 compares the wavelength change of Δ and Ψ derived from the optical properties and thickness of the assumed transparent layer 61 and the like with the wavelength change of Δ and Ψ actually obtained, thereby changing the optical properties and thickness. By repeating the comparison while making the measurement, the optical property and the thickness of the transparent layer 61 are calculated.

As described above, the sample inspection apparatus according to the first embodiment measures the thickness of one layer of the sample 6 by fluorescence X-ray analysis when fluorescence X-ray analysis is available, and utilizes fluorescence X-ray analysis. In this difficult case, the thickness of the layer can be measured by ellipsomitri. As described above, in the sample inspection apparatus according to the first embodiment, the thickness of each layer can be measured using any suitable method for the sample 6. Since it is not necessary to use the sample inspection apparatus separately according to the sample 6, time and effort at the time of inspecting the sample 6 are simplified. In addition, in the case of the sample 6 whose composition is unknown, it is also possible to perform composition analysis by fluorescence X-ray analysis.

Next, the optical characteristic of the transparent layer 61 is measured. When the composition of the transparent layer 61 is different from the n-type layer 62, the p-type layer 63, and the metal layer 64, it is possible to use both fluorescence X-ray analysis and ellipsomite. First, the X-ray source 21 irradiates X-rays with the sample 6, and the analysis unit 4 calculates the thickness of the transparent layer 61 by analyzing the spectrum of fluorescent X-rays, and calculates the thickness of the transparent layer 61. Remember. Next, the incident part 11 injects linearly polarized light into the transparent layer 61 of the sample 6. The analysis unit 4 fixes the value of the thickness of the transparent layer 61 to the value measured by fluorescence X-ray analysis, and derives from the optical properties and the thickness of the transparent layer 61 while changing the optical characteristics of the transparent layer 61. By repeating the comparison between the wavelength change of? And?, Which is actually obtained, and the wavelength change of? And?, The obtained optical properties of the transparent layer 61 are performed.

As described above, in the present invention, the thickness of one layer in the sample 6 can be measured by fluorescence X-ray analysis, and the optical properties such as the refractive index of the same layer can be measured by the ellipsomite. In an elementary ellipsometer, each of the optical characteristics and the thickness of the layer cannot be measured independently. On the other hand, in this invention, each of the optical characteristic and thickness of a layer can be measured independently. Therefore, according to this invention, it becomes possible to measure optical characteristic and thickness, such as refractive index, of each layer contained in the sample 6 more accurately.

In the sample inspection apparatus according to the first embodiment, the analysis section 4 controls the operation of the incident portion 11 and the X-ray source 21 to operate the incident portion 11 and the X-ray source 21 simultaneously. It is possible. The visible light incident on the incidence portion 11 by the sample 6 and the X-rays radiated by the X-ray source 21 on the sample 6 do not interfere with each other because the wavelength region is different. Since the reflected light received by the reflected light receiving unit 12 and the fluorescent X-ray detected by the fluorescent X-ray detector 22 are different in wavelength range, they can be detected without interfering with each other. That is, the sample inspection apparatus according to the first embodiment can acquire the wavelength change of Δ and Ψ of the sample 6 and the fluorescent X-ray spectrum of the sample 6 at the same time. The analysis unit 4 performs a process of independently obtaining each of the optical characteristics and the thickness of the sample 6 based on the wavelength change of Δ and Ψ and the fluorescent X-ray spectrum of the sample 6 acquired at the same time. Therefore, the sample inspection apparatus according to the first embodiment can measure optical characteristics such as refractive index and the thickness of each layer included in the sample 6 in a short time.

Next, the measurement of the thickness of the transparent layer 61 and the metal layer 64 in the sample 6 is considered. Since it is difficult to measure the thickness of the metal layer 64 in ellipsomite, the thickness of the metal layer 64 is measured by fluorescence X-ray analysis, and the thickness of the transparent layer 61 is measured by the ellipsomite. The driving unit 52 positions the focal point of the linearly polarized light incident by the incident part 11 on the transparent layer 61, and the incident part 11 enters the linearly polarized light into the transparent layer 61 of the sample 6, The reflected light receiving unit 12 receives the reflected light from the transparent layer 61, and the analyzing unit 13 acquires the wavelength change of Δ and Ψ of the transparent layer 61. The analysis unit 4 performs a process for obtaining the thickness of the transparent layer 61 based on the wavelength change of Δ and Ψ. In addition, the X-ray source 21 irradiates X-rays to the sample 6, the fluorescent X-ray detector 22 detects the fluorescent X-rays from the sample 6, and the analysis unit 23 the spectrum of the fluorescent X-rays Get. The analyzing unit 4 extracts the fluorescent X-ray intensity of the element not included in the other layer among the elements included in the metal layer 64 from the spectrum of the fluorescent X-rays, and based on the extracted X-ray intensity, The process of calculating thickness is performed.

As described above, the sample inspection apparatus according to the first embodiment measures the thickness of the layer by fluorescence X-ray analysis, among the plurality of layers included in the sample 6, for the layer capable of utilizing fluorescence X-ray analysis, About the layer which can be used for ellipsomite, the thickness of a layer can be measured by an ellipsomtri. Thus, the sample inspection apparatus which concerns on Embodiment 1 can measure thickness with respect to each of the several layer included in the sample 6 of a multilayer structure using the appropriate method corresponding to a layer. The thickness of a plurality of layers can be measured by the same sample inspection apparatus without the need to separate and use the sample inspection apparatus corresponding to the layer to be measured, which simplifies time and effort when inspecting the sample.

In addition, the sample inspection apparatus according to Embodiment 1 operates the incident portion 11 and the X-ray source 21 at the same time to change the wavelength change of Δ and Ψ of the transparent layer 61 and the fluorescent X-ray spectrum of the metal layer 64. Can be acquired at the same time. The analysis unit 4 independently calculates the thickness of the transparent layer 61 and the thickness of the metal layer 64 based on the wavelength change of Δ and Ψ of the transparent layer 61 and the fluorescence X-ray spectrum of the metal layer 64 obtained at the same time. The process is performed. Therefore, the sample inspection apparatus according to the first embodiment can measure the thickness of each of the plurality of layers included in the sample 6 of the multilayer structure in a short time.

In addition, the sample inspection apparatus according to the first embodiment can perform Raman scattered light analysis of the sample 6. The layer to be subjected to Raman scattered light analysis measurement is referred to as n-type layer 62. The drive unit 52 moves the sample stage 51 up and down to position the focus of the laser light from the laser light source 31 on the n-type layer 62. The laser light source 31 irradiates the laser light with the n-type layer 62, the Raman scattered light detector 32 detects the Raman scattered light from the n-type layer 62, and the analysis unit 33 from the n-type layer 62. The spectrum of the Raman scattered light is obtained. The analysis unit 4 performs processing for calculating structural characteristics such as crystallinity of the n-type layer 62 from the spectrum of the Raman scattered light. Thereby, for example, the crystallinity of the polycrystalline silicon or amorphous silicon contained in the n-type layer 62 can be measured. In addition, other structural characteristics such as stress in the n-type layer 62 can be measured in addition to the degree of crystallinity by Raman scattered light analysis. In addition, Raman scattered light analysis can be performed also for layers other than the n-type layer 62.

As described above, the sample inspection apparatus according to the first embodiment can measure structural characteristics such as crystallinity and the like for each layer in the sample 6 by Raman scattered light analysis separately from ellipsomitri and fluorescence X-ray analysis. . Since it is not necessary to use another sample inspection apparatus for performing Raman scattered light analysis, time and effort when inspecting a sample are simplified. In addition, since the laser light and the Raman scattered light irradiated to the sample 6 by the laser light source 31 for the Raman scattered light analysis differ from each other in the X-ray and the wavelength region, the Raman scattered light analysis and the fluorescent X-ray analysis can be performed simultaneously. For example, the sample inspection apparatus simultaneously acquires the Raman scattered light spectrum and the fluorescent X-ray spectrum of the n-type layer 62, and the analysis unit 4 can perform a process of obtaining the structural characteristics and the thickness of the n-type layer 62. . Therefore, the sample inspection apparatus according to the first embodiment can measure structural characteristics such as crystallinity and the thickness of the sample 6 in a short time.

(Embodiment 2)

3 is a schematic diagram showing the configuration of a sample inspection apparatus according to Embodiment 2. A sample inspection apparatus is an X-ray source 71 instead of the X-ray source 21, the fluorescent X-ray detection unit 22, and the analysis unit 23. ), A reflection X-ray detection unit 72 for detecting the reflected X-rays reflected from the sample 6 by the X-ray source 71, and an analysis unit 73 for analyzing the detection result of the reflected X-rays. Doing. In addition, the sample inspection apparatus is provided with an optical system (not shown) for irradiating X-rays from the X-ray source 71 to the sample 6 and for changing the incident angle of X-rays to the sample 6 during X-ray irradiation. . The X-ray source 71 is an X-ray tube, and the reflective X-ray detector 72 is disposed at a position capable of detecting the reflected X-ray from the sample 6. The reflection X-ray detection unit 72 includes a detection element for counting the X-ray intensity, and outputs an electrical signal indicating the intensity of the detected reflection X-ray to the analysis unit 73. The X-ray source 71, the reflected X-ray detection unit 72, and the analysis unit 73 correspond to the X-ray measuring unit in the present invention.

The analyzing unit 73 classifies the electric signal from the reflecting X-ray detector 72 by the incident angle of the X-rays, and relates the relationship between the incident angle of the X-rays to the sample 6 and the intensity of the reflected X-rays, that is, the incident angle of the X-rays. The intensity change of the reflected X-ray is acquired. The analysis unit 73 is connected to the analysis unit 4, and outputs the change in intensity of the reflected X-ray to the analysis unit 4 with respect to the incident angle of the X-rays. The analysis unit 4 simulates the intensity change of the reflected X-rays relative to the incident angle of the X-rays, and compares the measurement result of the intensity change of the reflected X-rays input from the analysis unit 73 with the simulation result to optimize the simulation parameters. A process is performed. The analysis unit 4 calculates the film thickness, density and roughness of each layer of the sample 6 by optimizing the simulation parameters. In this way, the X-ray source 71, the reflected X-ray detection unit 72, the analysis unit 73, and the analysis unit 4 analyze the sample 6 by XRR (X-ray reflectance method). The other structure of the sample inspection apparatus is the same as that of Embodiment 1, the same code | symbol is attached | subjected to the corresponding part, and the description is abbreviate | omitted.

The sample inspection apparatus according to the second embodiment measures the thickness of one layer of the sample 6 by XRR when XRR can be used, and measures the thickness of the layer by ellipsomite when XRR is difficult to use. I can measure it. As described above, the sample inspection apparatus according to the second embodiment can measure the thickness of each layer by using an appropriate method corresponding to the sample 6, and it is necessary to separate and use the sample inspection apparatus by the sample 6. none. In addition, similarly to the first embodiment, the sample inspection apparatus according to the second embodiment can measure the thickness of each of the plurality of layers included in the sample 6 having the multilayer structure by using an appropriate method corresponding to the layer, It is not necessary to separate and use the sample inspection device corresponding to the layer to be measured. Therefore, time and effort at the time of inspecting the sample 6 are simplified. Moreover, the sample inspection apparatus which concerns on Embodiment 2 can measure the density and roughness of each layer contained in the sample 6 by XRR.

In addition, the sample inspection apparatus according to the second embodiment can measure the thickness of one layer in the sample 6 by XRR, and can measure optical characteristics such as the refractive index of the same layer by the ellipsomite. Therefore, also in Embodiment 2, it becomes possible to measure optical characteristic and thickness, such as refractive index, of each layer contained in the sample 6 more accurately. In the sample inspection apparatus according to the second embodiment, the XRR process and the ellipsomite process are performed in parallel, so that similarly to the first embodiment, the thickness of each of the plurality of layers included in the sample 6 having the multi-layer structure can be determined in a short time. It becomes possible to measure.

In addition, the sample inspection apparatus according to the second embodiment can measure structural characteristics such as crystallinity for each layer in the sample 6 by Raman scattered light analysis separately from XRR and ellipsomitri. It can be performed in parallel with Raman scattered light analysis and XRR, and according to the second embodiment, the sample inspection apparatus according to the second embodiment can measure the structural characteristics such as crystallinity and the thickness of the sample 6 in a short time.

In addition, in Embodiment 2, although the form which performs XRR without performing fluorescence X-ray analysis was shown, the sample inspection apparatus of this invention may be a form which can also perform fluorescence X-ray analysis in addition to XRR. That is, in addition to the structure shown in FIG. 3, the sample inspection apparatus may be equipped with the X-ray source 21, the fluorescent X-ray detection part 22, and the analysis part 23 further. In addition, the sample inspection apparatus may be a form in which the X-ray source of X-rays irradiated to the sample 6 for XRR and the X-ray source of X-rays irradiated to the sample 6 for fluorescence X-ray analysis are common.

11: incident part 12: reflected light receiving part
13: analysis unit 21: X-ray source
22: fluorescent X-ray detector 23: analyzer
31 laser light source 32 Raman scattered light detection unit
33: analysis unit 34: beam splitter
4: analysis unit 51: sample table
6: sample 71: X-ray source
72: reflection X-ray detection unit 73: analysis unit

Claims (7)

An ellipsometer portion for receiving linearly polarized light into the sample to receive the reflected light from the sample, and measuring a change in polarization between the incident light and the reflected light;
An X-ray measuring unit for irradiating X-rays to the sample to measure X-rays from the sample,
And an analysis section for performing an analysis for obtaining a thickness of the sample based on the measurement result in the ellipsometer section or the X-ray measurement section. The method according to claim 1,
The analysis unit,
A thickness calculator for calculating a thickness of the sample based on the measurement result of the X-ray measuring unit;
And an optical property calculation unit for calculating an optical property of the sample based on the measurement result of the ellipsometer unit and the calculation result of the thickness of the sample. The method according to claim 1,
In the case where the sample is a multilayer sample, an incidence position adjusting unit is further provided to adjust a position at which the linearly polarized light is incident on the ellipsometer portion so that the linearly polarized light is incident on any one layer of the multilayer sample.
The analysis unit,
A first calculation unit that calculates the thickness of the one layer in which the ellipsometer unit has incident linearly polarized light on the basis of the measurement result in the ellipsometer unit;
And a second calculation unit for calculating a thickness of another layer in the multilayer sample based on the measurement result in the X-ray measuring unit. The method according to claim 2,
In the case where the sample is a multilayer sample, an incidence position adjusting unit is further provided to adjust a position at which the linearly polarized light is incident on the ellipsometer portion so that the linearly polarized light is incident on any one layer of the multilayer sample.
The analysis unit,
A first calculation unit calculating a thickness of the one layer in which the ellipsometer unit has incident linearly polarized light based on the measurement result in the ellipsometer unit;
And a second calculation unit for calculating the thickness of another layer in the multilayer sample based on the measurement result in the X-ray measuring unit. The method according to any one of claims 1 to 4,
Further comprising a Raman scattered light measuring unit for measuring the Raman scattered light generated from the sample by injecting a monochromatic light into the sample,
The analysis unit,
And a structural characteristic calculator for calculating structural characteristics of the sample based on the measurement results of the Raman scattered light measuring unit. An ellipsometer portion for receiving linearly polarized light into a flat sample to receive reflected light from the sample, and for measuring a change in polarization between the incident light and the reflected light;
Using a sample inspection device having an X-ray measuring unit for measuring the X-rays from the sample by irradiating the X-rays to the sample,
The thickness of the sample is calculated based on the measurement result in the X-ray measuring unit,
And an optical property of the sample is calculated on the basis of the measurement result of the ellipsometer and the calculation result of the thickness of the sample. The method of claim 6,
In the case where the sample is a multilayer sample, the change in polarization between incident light and reflected light is measured for any one layer of the multilayer sample in the ellipsometer section,
The X-ray measuring unit measures X-rays from the multilayer sample,
Calculate the thickness of the one layer based on the measurement result in the ellipsometer section,
And a thickness of another layer in the multilayer sample is calculated based on the measurement result in the X-ray measuring unit.

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