201205062 六、發明說明： 【發明所屬之技術領域】 内的特性進行 本發明是有關於一種對包括試料厚度在 計測的試料檢查裝置以及試料檢查方法。 【先前技術】 在太陽能電池元件等的半導體元件中，有具備將組成 互不相同的多個層來層疊而成的多層結構的树。在此 元件的製造縣巾或製造後，需要對各層的厚度以及盆他 特性進行計測。作為通過對試料的厚度以及其他特性ς行 計測而檢測試料的裝置’有橢率計（ellips〇mete〇。擴率 計實現擴圓偏光法（ellipsometry)，即，對試料照射直線 偏光，對照向試料的人射域反射光之_偏光狀態的變 化進行測定，根據偏光狀態的變化來計測試料的厚^以及 折射率等。在專利文獻1巾，揭示了-_用橢率計來計 測試料的厚度的技術。而且，作為其他的試料檢查裝置， 有一種螢光X射線分析裝置，其向試料照射又射線，並對 從試料產生的螢光X射線進行分析。當試料的組成為已知 時，能夠由螢光X射線的強度來計測試料的厚度。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2005_233928號公報 當具備多層結構的試料含有閘極（gate)絕緣層等的 透明層時，能夠利用橢率計來計測透明層的厚度。但是， 如果試料含有配線層等的金屬層，則光將無法侵入金屬層 4 201205062 ^内部’因此無法利用㈣計來計測金屬層的厚度。對此， m裝六置能夠計測金屬層的厚度。但是，根據 =組^_，存在包含麟分析裝置難以測定 厚，的層的試料。例如’切（論⑽）基板上形成著以 -氧化㈣成分的_絕緣層即透明層的試料中難以區 =自絲板的㈣螢光χ射線與來自透明層㈣的榮光 2線’因此’無法_地計測各層的厚度。如此，根據 1的不同，適當的試料檢查裝置也㈣，從而存在必須 根據試料來區分使職料檢查裝置的問題。尤立，為了對 ^層，料㈣性進行計測，必須制多倾料檢查裝置， 從而存在耗費工夫的問題。 【發明内容】 上本發明是有鑒於此種情_完成，其目的在於提供一 種試料檢查裝置缝試騎查方法，通獅乡種計測方法 加以組合，從而使得可檢查的試料不受限制。 本發明的試料檢查裝置的特徵在於包括：擴率計部， 向試料入射直線偏光，接絲自試料的反射光對入射光 與反射光之間的偏光的變化進行測定；χ射線測定部，向 试料照射X射線，對來自簡的χ射線進行測定；以及分 析部，根據所述橢率計部朗述χ⑽測定部的測定結 果，進行用於求出試料的厚度的分析。 本發明的試料檢查裝置的特徵在於，所述分析部包 括：厚度計算部，根據所述乂射線測定部的測定結果，計 算試料的厚度；以及光學雜計算部，根據所賴率計部 201205062 的測定結果以及試料厚度的計算結果，計算試料的光學特 性。 本發明的試料檢查裝置的特徵在於更包括入射位置調 整部，當試料為多層試料時，調整所述橢率計部使直線偏 光入射的位置，以使直線偏光入射至多層試料中的任一 層，所述分析部更包括：第1計算部，根據所述橢率計部 的測定結果，計算所述橢率計部使直線偏光入射的所述任 一層的厚度；以及第2計算部，根據所述χ射線測定部的 測定結果，計算所述多層試料中的其他層的厚度。 本發明的試料檢查裝置的特徵在於更包括拉曼散射光 測定部’向試料入射單色光’對從試料產生的拉曼（Ra_) 散射光進行測定，所述分析部更包括結構特性計算部，根 據所述拉曼散射光測定部的測定結果，計算試料的结構 性。 本發明的試料檢查方法的特徵在於，使用具備橢率計 部及X射線測定部的試料檢查裝置，根據所述χ射線測定 部的測S結果，計算試料的厚度，並根據所述橢率計部的 測疋結果以及試料厚度的計算結果，計算試料的光學特 性，所述橢率計部向平板狀的試料入射直線偏光，接收來 自試料的反射光，對入射光與反射光之間的偏光的變化進 行測定’所述X射線測定部向試料照射X射線，並測定來 自試料的X射線。 本發明的試料檢查方法的特徵在於，當試料為多層試 料時’湘所述橢率計部來對多層試料巾的任意的一層測 6 201205062 Λ. 疋入射光與反射光之間的偏光的變化，利用所述χ射線測 卩來測定來自所述多層試料的X射線，根據所述橢率計 測疋結果，計算所述一層的厚度，根據所述X射線測 疋邛的測定結果，計算所述多層試料中的其他層的厚度。 —在本發明中，試料檢查裝置具備橢率計部和X射線測 ，°卩根據橢率計部或χ射線測定部的測定結果，計測試 料的厚度β因而，對於能夠利用螢光χ射線分析等使用χ 射線的分析的試料，可使用X射線來計測試料的厚度，對 於難以利用使用X射線的分析的試料，可通過橢圓偏光法 來計測試料的厚度。 而且，在本發明中，試料檢查裝置通過使用χ射線的 分析來計測試料的厚度，並根據橢率計部的測定結果以及 計，所得的試料的厚度’來對試料的折射率等的光學特性 進行》十測。因而，與單獨的橢率計不同，可分別獨立地計 測試料的光學特性以及厚度。 而且，在本發明中，試料檢查裝置對於多層試料中的 任層，可通過搞圓偏光法來計測厚度，對於另一層，可 通過使用X射_分析來計測厚度。也能夠同時進行各層 的厚度的計測。 〜而且，在本發明中，試料檢查裝置更具備拉曼散射光 測疋\與使用橢圓偏光法以及χ射線的分析不同地，可 通過拉曼政射光分析來計測試料的結晶化度等的結構特 性。 【發明的效果】 201205062201205062 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a sample inspection device and a sample inspection method including a sample thickness measurement. [Prior Art] A semiconductor element such as a solar cell element has a multilayer structure in which a plurality of layers having different compositions are laminated. After the manufacture of the component or the manufacture of the component, it is necessary to measure the thickness of each layer and the characteristics of the pot. The apparatus for detecting a sample by measuring the thickness and other characteristics of the sample has an ellipsometer (ellips〇mete〇). The expansion meter realizes ellipsometry, that is, the sample is irradiated with linear polarization, and the contrast is The change in the polarization state of the reflected light of the human field of the sample is measured, and the thickness of the test material, the refractive index, and the like are measured according to the change in the polarization state. In Patent Document 1, it is disclosed that the test material is measured by an ellipsometer. Further, as another sample inspection device, there is a fluorescent X-ray analysis device that irradiates a sample with a ray and analyzes the fluorescent X-rays generated from the sample. When the composition of the sample is known The thickness of the test material can be measured by the intensity of the fluorescent X-rays. [Prior Art Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-233928 A sample having a multilayer structure contains a gate insulating layer. In the case of a transparent layer, the thickness of the transparent layer can be measured by an ellipsometer. However, if the sample contains a metal layer such as a wiring layer, light cannot enter the gold. Layer 4 201205062 ^Internal 'The thickness of the metal layer cannot be measured by (4). For this reason, the thickness of the metal layer can be measured by the m-mounting. However, according to the = group ^, there is a case where it is difficult to measure the thickness by the inclusion of the analysis device. The sample of the layer. For example, the sample in which the transparent layer of the _ insulating layer which is formed by the oxidized (four) component is formed on the substrate is difficult to be in the range of (four) fluorescent ray rays from the silk plate and glory 2 from the transparent layer (four). The line 'so' cannot measure the thickness of each layer. Thus, depending on 1, the appropriate sample inspection device is also (4), and there is a problem that it is necessary to distinguish the material inspection device according to the sample. The material (four) is measured, and it is necessary to manufacture a multi-pour inspection device, which has a problem of laborious. [Invention] The present invention has been made in view of the above circumstances, and aims to provide a sample inspection device for sewing test and riding. The Tongshi Township species measurement method is combined so that the inspectable sample is not limited. The sample inspection device of the present invention is characterized in that it comprises: a diffusion meter section, which feeds into the sample Linearly polarized light, the reflected light from the sample is measured by the change of the polarized light between the incident light and the reflected light; the X-ray measuring unit irradiates the sample with X-rays to measure the X-ray from the simple; and the analysis unit, The analysis of the thickness of the sample is performed based on the measurement result of the ellipsometer (10) measurement unit. The sample inspection device according to the present invention is characterized in that the analysis unit includes a thickness calculation unit, The measurement result of the X-ray measurement unit calculates the thickness of the sample, and the optical noise calculation unit calculates the optical characteristics of the sample based on the measurement result of the measurement rate unit 201205062 and the calculation result of the sample thickness. Characteristics of the sample inspection device of the present invention Further, the incident position adjusting unit further includes: when the sample is a multilayer sample, adjusting a position at which the ellipsometer portion makes the linearly polarized light incident, so that the linearly polarized light is incident on any one of the plurality of layers, and the analyzing portion further includes: The calculation unit calculates, according to the measurement result of the ellipsometer unit, any of the elliptic meter units that cause linearly polarized light to enter Thickness; and a second calculating unit, based on the measurement result of the χ-ray measurement unit, the thickness of the other layers of the multilayer in a sample is calculated. The sample inspecting apparatus according to the present invention is characterized in that it further includes a Raman scattered light measuring unit 'injecting monochromatic light into the sample' to measure Raman scattered light generated from the sample, and the analyzing unit further includes a structural characteristic calculating unit. The structural properties of the sample were calculated based on the measurement results of the Raman scattered light measuring unit. In the sample inspection method of the present invention, the sample inspection device including the ellipsometer unit and the X-ray measurement unit is used, and the thickness of the sample is calculated based on the S measurement result of the X-ray measurement unit, and based on the ellipsometer The measurement result of the part and the calculation result of the sample thickness calculate the optical characteristics of the sample, and the ellipsometer unit linearly polarizes the flat sample, receives the reflected light from the sample, and polarizes the incident light and the reflected light. The change is measured. The X-ray measuring unit irradiates the sample with X-rays and measures X-rays from the sample. The sample inspection method according to the present invention is characterized in that when the sample is a multilayer sample, the ellipsometer portion of the slab is used to measure an arbitrary layer of the multilayer test towel. 6 201205062 Λ. 偏 Change in polarization between incident light and reflected light Determining X-rays from the multilayer sample by using the X-ray ray, calculating a thickness of the layer according to the ellipsometer, and calculating the thickness according to the measurement result of the X-ray measurement The thickness of the other layers in the multilayer sample. In the present invention, the sample inspection device includes an ellipsometer and an X-ray measurement, and the thickness β of the test material is measured based on the measurement results of the ellipsometer or the ray measurement unit. Therefore, the fluorescence ray analysis can be performed. For the sample using the analysis of the ray, the thickness of the test material can be measured using X-rays, and for the sample which is difficult to use the analysis using X-rays, the thickness of the test material can be measured by the ellipsometry. Further, in the present invention, the sample inspection device measures the optical properties of the sample, such as the thickness of the sample by using the analysis of the ray ray, and the thickness of the obtained sample based on the measurement result of the ellipsometer. Carry out the "ten test." Thus, unlike the individual ellipsometers, the optical properties and thickness of the test material can be independently calculated. Further, in the present invention, the sample inspection device can measure the thickness by the circular polarization method for any of the multilayer samples, and the thickness can be measured by the X-ray analysis for the other layer. It is also possible to measure the thickness of each layer at the same time. In addition, in the present invention, the sample inspection device further includes a Raman scattered light measurement, and a structure in which the degree of crystallization of the test material can be measured by Raman administration light analysis, unlike the analysis using the ellipsometry method and the x-ray beam. characteristic. [Effects of the Invention] 201205062
‘ L _在本發明中’可使用與試料相應的適當的方法來計測 试料的厚度。由於無須根據試料的不同來區分使用試料檢 查裝置’因此本發明可起到優異的效果，例如檢查試料時 的工夫變得簡便。 ▲為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 以下’根據表示實施方式的圖式來具體說明本發明。 (實施方式1) 圖1是表示實施方式1的試料檢查裝置的結構的示意 圖。試料檢查裝置具備：載置試料6的試料台51 ;向試料 台51上的試料6入射直線偏光的入射部11 ;以及接收入 射光被試料6反射後的反射光的反射光受光部12。在圖i 中，以虛線箭頭來表示入射光以及反射光。入射部丨丨是包 含氙氣燈（xenon-lamp)等的白色光源、狹縫（slit)及將 白色光轉換為直線偏光的偏光元件而構成的光學系統。反 射光受光部12是包含對反射光的相位進行調製的相位調 製器、檢偏器、對通過檢偏器後的光進行分光的分光器及 對分光後的光進行檢測的檢光器而構成的光學系統。在反 射光受光部12上，連接著對反射光受光部12的反射光的 受光結果進行分析的分析部13。 反射光受光部12按照分光後的不同波長，將與相位的 調製相應的光的檢測強度輸出至分析部13。分析部13根 8 201205062 據與相位的調製相應的光的檢測強度’針對每個波長來對 垂直於試料6的入射面的偏光成分即）偏光與平行於所述 入射面的偏光成分即P偏光的相位差△、以及s偏光與p 偏光的反射振幅比角Ψ進行計測。△以及Ψ是橢圓偏光法 的測定值。如此，分析部13獲取試料6的△以及ψ的波 長變化。入射部11、反射光受光部12以及分析部13對應 于本發明中的橢率計部，利用橢圓偏光法來進行試料6的 檢查。 §式料檢查裝置更具備.X射線源21 ;使X射線源21 產生的X射線照射至試料6的未圖示的光學系統；以及對 因X射線的照射而由試料6所產生的螢光X射線進行檢測 的螢光X射線檢測部22。至少X射線源21、試料台51 以及螢光X射線檢測部22被收納在用來屏蔽χ射線的未 圖示的框體内。在圖1巾，讀線箭縣表賴射至試料 6的X射線以及螢光X射線β χ射線源21是通過使加速 電子撞擊金㈣树（target)來產生χ射線的χ射線管。 榮光X射線檢騎22配置在能_從試料6產生的榮光 X射線進行檢測的位置虚。罄杏γ ,,,^ ^ 置恩愛光χ射線檢測部22具備比 半連導元件。錢光χ射線檢 分析部23。 Κ先χ射線的檢聰果進行分析的 螢光X射線檢測部22將與 射線的能量（energv) 恭揿列兀仵的螢光Χ 分浙邱23舻成比的電信號輸出至分析部23。 ° '強度來甄選來自螢光X射線檢測部22 20120506¾ 的電信號 對各信號強度的電信號進行計數（c〇unt)，由 此獲取螢光X射線的波長與計數值的_，即，螢光χ射 線的頻譜（spectmm)。Χ射線源2]1、營光χ射線檢測部 22以及分析部23對應于本發日种的又射_定部，通過 用螢光X射線分析來進行試料6的檢查y外圖】中， 表示了 _偏光財的光的光路與料χ射線分析中 所用的X射線的光路位於同—平面上的形態，但試料檢查 裝置也可採用兩個光路位於彼此交又的平面上的形態。 忒料檢查裝置更具備：雷射（laser)光源31 ;將來自 雷射光源31的雷射大致垂直地照射至試料6的未圖示的光 學系統；對因雷射的照射而從試料6產生的拉曼散射光進 行分離的分束器（beam-splitter) 34 ;以及拉曼散射光檢測 部32。通過雷射對試料6的照射，從試料6產生受到雷射 激發的拉曼散射光。拉曼散射光由分束器34從雷射中分離 出來，並入射至拉曼散射光檢測部32。圖1中，以兩點鏈 線的箭頭來表示照射至試料6的雷射以及拉曼散射光。拉 曼散射光檢測部32是包含濾光器、對拉曼散射光進行分光 的分光器以及對分光後的光進行檢測的檢光器而構成的光 學系統。在拉曼散射光檢測部32上，連接著對拉曼散射光 的檢測結果進行分析的分析部33。 拉曼散射光檢測部32按照分光後的不同波長，將拉曼 散射光的檢測強度輸出至分析部33。分析部33獲取拉曼 散射光的波長與檢測強度的關係，即，拉曼散射光的頻譜。 雷射光源31、分束器34、拉曼散射光檢測部32以及分析 201205062, 部33對舒本發3种恤錄射七収部 光分析來進行試料6的檢查。 、拉人政射 在試料台51上，連結著使用馬達（m〇t〇r) 料台51上下移動的驅動部52。通過驅動部& : 上下移動，而使試料6上下移動，從而能夠對入射 所入射的直線偏光在試料6内的焦點位置與雷射 所照射的雷射在試料6内的焦點位置進行調整。當試料^ 2多層結構時’驅動部52能夠調整焦點位置，以^直^ 動射人射至試料6中的作為測定對象的層。而且，驅 作料6㈣焦點位置發生移動，從而能夠對 =橢圓偏光法以及拉曼散射光分析的測定對象的層進行 批邮，tM3、23及33與驅動部52連接於分析部4。分 ί IT進行數據(㈣的輸出入的介面㈤―)、 ^入，自制者的指示的輸人部、執行各種運算的運算 子儲運算所需的k息及程式（㈣g酿）的記憶體 以及輸出分析結果的印表機（printei>)等的輸 輪:$八把。分析部13將試料6的△以及Ψ的波長變化 ^4 Γ八部4,分析部23將勞光Χ射線的頻譜輸出至分 而且，八Γ折部33將拉曼散射光的頻譜輸出至分析部4。 .刀卩4具有對驅動部52的動作進行控制的功能。 ^表不試料6的例子的示意剖面圖。圖2所示的 :的金二!f構的太陽能電池元件。試料6層疊有金屬 、由p型半導體構成的p型層63、由η型半 11 201205062 導體構成的η型層62以及透明層61。金屬層64是由Cu 或Mo等的金屬構成的背面電極。透明層61是由Zn〇戋 ITO等構成的透明電極。p型層63以及η型層62是由多 晶矽、非晶矽（amorphous silicon)或化合物半導體等的半 導體構成，是太陽能電池元件的光吸收層。圖2中進行了 簡化，實際的太陽能電池元件包含更多的層。另外，在本 發明中’也能夠進行單層結構的試料的檢查。 考慮對圖2所示的試料ό中的透明層61的厚度進行 測的情況。當透明層61的組成不同於η型層62、ρ型^ 63以及金屬層64時’能夠妓χ射線分析來計測厚 度。此時，X射線源21將X射線照射至試料6，螢光χ 射線檢測部22對來自試料6的螢光χ射線進行檢測，分 析部23獲取螢光X射線的頻譜^分析部4進行以下處理^ 即，從螢光X射線的頻譜中提取透明層61中所含的元素 中的在其他層中不含的元素的$光\射_度，並根據提 取的螢光χ射線強度以及舰判明的該元素在透明層61 中的濃度，來計算透明層61的厚度。 日 而且’當透明層61中的元素在η型層62、ρ型層63 以及金㈣64中雜-層中均含有時，雖難以利用榮光χ 射線分析來剌厚度，但可__偏光法來計測厚度。 驅動部52使試料台51上下移動，從而使入射部η所入射 的直線偏光的焦點位於透明層61 h人射部u使直線偏 光入射至試料6的透明層61，由補級光部12來接收 透明層61的反射光，分析部13獲取透明層61的△以及ψ 12 201205062 的波長變化。分析部4進行以下處理，即，對由假定的透 明層61的折射轉的絲特性以及厚度所導出的△以及ψ 的波長變化、與實際獲取的△以及ψ的波長變化進行比 較，一方面使光學特性以及厚度發生變化一方面反復進行 比較，從而求出透明層61的光學特性以及厚度。 如上所述，實施方式1的試料檢查裝置在能夠利用螢 光X射線分析的情況下，可通過螢光χ射線分析來計測試 料6中的-個層的厚度’在難以彻螢光\射線分析的情 況下，可通過橢圓偏光法來計測層的厚度。如此，無論是 怎樣的試料6，實施方式1的試料檢查裝置都能使用與試 料6相應的適當的方法來計測各層的厚度。由於無須根據 試料6的不同來區分使賴料檢查裝置，因此檢查試料6 時的工夫變彳于簡便。另外’如果是組成不明的試料6，則 也可通過螢光X射線分析來進行組成分析。 其次’考慮對透明層61的光學特性進行計測的情況。 當透明層61的組成不同於η型層62 層64時，可湘料χ魏特以_^光法這兩者 首先’ X⑽源21冑X射線騎至試料6，分析部4對螢 光χ射線_譜進行分析’由此計算Λ翻層61的厚度， 並將計算出的透明層61的厚度加以存儲1射部η繼而 使直線偏光人射至試料6的透明層q ^分析部*進行以下 處理’即，將透明層61的厚度的值固定為通過螢光又射 線分析而計錢透明層61的絲雜發生變 化’-方面反復對由透明層61的光學特性以及厚度導出的 1 1201205062 △以及Ψ的波長變化與實際獲取的△以及ψ的波長變化進 行比較，從而求出透明層61的光學特性。 如上所述’本發明中，可通過螢光X射線分析來對試 料6中的一層的厚度進行計測，並通過橢圓偏光法來對同 一層的折射率等的光學特性進行計測。單個的橢率計無法 分別獨立地計測層的光學特性以及厚度。對此，本發明中， 能夠分別獨立地計測層的光學特性以及厚度。因而，根據 本發明，此夠更向精度地對試料6中所含的各層的折射率 等的光學特性和厚度進行計測。 而且實施方式1的試料檢查裝置中，分析部4可控 制入射部11以及X射線源21的動作，使入射部u與X 射線源21同時動作。入射部11向試料6入射的可見光與 X射線源21向試料6照射的X射線的波長區域不同，因 此不會相互干擾。而且，反射光受光部12接㈣反射光與 螢光X射線檢測部22所檢測的螢光x射線的波長區域不 同’因此不會相互干擾而可同時進行檢測。即，實施 1的試料檢查裂置能夠同時獲取試料6的△以及 : 變化和試料6的螢光X射線頻譜。分析部4進行以下處理長 即’根據㈣獲取的試料6的Δ以及ψ的波長變化與 =射線頻譜，分職立地求出試料6的絲特性^及 所Γ方式1的試料檢查裝置能夠以短時間來對 =枓6中所含的各層的折射轉的光學祕和厚度進行計 其次，考慮對試料6中的透明層61以及金屬層料的 201205062 厚度進行計測的情況。由於橢圓偏光法難以計測金屬 4 的厚度，因此通過螢光X射線分析來計測金屬層64 度，並通過橢圓偏光法來計測透明層61的厚度。驅、泣 52使入射部u所人_直雜光_點仙^明層動^ 上，入射部11使直線偏光入射至試料6的透明層Μ， 射光受光部12接收透明層61的反射光，分析部13择取 明層61的△以及ψ的波長變化。分析部4進行以下1理， 即，根據△以及ψ的波長變化，求出透明層61的厚/。’ 而且，X射線源21使X射線入射至試料6，螢光χ =線 檢測部22對來自簡6的螢光X射線進行檢測，分析部 23獲取螢光X射線的頻譜。分析部4進行以下處理，即°， 從螢光X射線的頻譜中提取金屬層64中所含的元素中的 在其他層中不含的元素的螢光X射線強度，並根據提取的 螢光X射線強度來計算金屬層64的厚度。 如上所述，實施方式丨的試料檢查裝置對於試料6中 所含的多個層中的可利用螢光X射線分析的層，可通過螢 光X射線分析來計測層的厚度，對於可利用橢圓偏光法的 層，可通過橢圓偏光法來計測層的厚度。如此，實施方式 1的試料檢查裝置對於多層結構的試料6中所含的多; 層，可分別使用與層相應的適當的方法來計測厚度。無須 根據作為測定對象的層來區分使用試料檢查裝置^能^利 用同一試料檢查裝置來計測多個層的厚度，因此，2查試 料時的工夫變得簡便。 —β 而且，實施方式i的試料檢查裝置可使入射部u與又 15 201205062 射線源21同時動作，從而同時獲取透明層61的△以及ψ 的波長變化和金屬層64的螢光X射線頻譜。分析部4進 行以下處理，即，根據同時獲取的透明層61的△以及ψ 的波長變化與金屬層64的螢光X射線頻譜，獨立地求出 透明層61的厚度與金屬層64的厚度。因而，實施方式^ 的試料檢查裝置能夠赌時間來對錢結構的試料6中所 含的多個層各自的厚度進行計測。 進而’實施方式1的試料檢查裝置可進行試料6的拉 曼散射光分析。將成為拉曼制光分析測定對象的層設為 η型層62。驅動部52使試料台51上下移動，從而使來自 雷射光源31的雷射的焦點位於η型層62上。雷射光源η 使雷射照射至η型層62，拉曼散射光檢測部32對來自η 型層62的拉曼散射光進行檢測，分析部33獲取來自 層62的拉曼散射光的頻譜。分析部4進行以下處理，即， 根據拉曼散射光賴譜，計算η型層a的結晶化度等的姓 構特性。由此，例如可對η型層62中所含的多㈣或非 石夕的結晶化度進行計測。另外，通過拉曼散射光分析，除 了結晶化度以外，還可對η型層62 _應力等其他結構特 性進行計測。而且，對於η型層62以外的其他層，也能進 行拉曼散射光分析。 、如上所述，實施方式1的試料檢查裝置除了備圓偏光 法以及螢光X麟分析以外，還能通過拉曼散射光分析來 對試料6中的各層計測結晶化度等的結構特性。由於無須 使用其他試料檢查裝置來進行拉曼散射光分析，因此，檢 201205062 查試料時的I夫變得簡便。而且 光分析而雷射光源31對試料6照射的雷射:二：： 的波長區域與又射線不同 2 乂及拉又政射先 2層騎構特師厚度的處理。因 :上料檢查裝置能夠以短時間來對試料6 的釔a曰化度#的結構特性和厚度進行計測。 (實施方式2) ° " 圖3是表示實施方式2的試料檢查裝置的結構的示意 圖。取代X射線源21、螢光x射線檢測部22以及分析部 23 ’試料檢查裝置具備X射線源7卜對來自χ射線源71 的X射線被試料6反射後的反射χ射線進行檢測的反射χ 射線檢測部72、以及對反射x射線的檢測結果進行分析的 分析部73。進而，試料檢查裝置具備未圖示的光學系統， 該光學系統使來自X射線源71的X射線照射至試料6， 且在X射線的照射過程中使X射線相對於試料6的入射角 度發生變化。X射線源71為X射線管’反射X射線檢測 部72配置在能夠對來自試料6的反射X射線進行檢測的 位置。反射X射線檢測部72具備對X射線強度進行計數 的檢測元件，並將表示檢測出的反射X射線的強度的電信 號輸出至分析部73。X射線源71、反射X射線檢測部72 以及分析部乃對應于本發明中的X射線測定部。 分析部73按照X射線的入射角度的不同而對來自反 17 201205062 射X射線檢測部72的電信號進行分類，獲取χ射線相對 於試料6的入射角度與反射χ射線的強度的關係，即，相 對於X射_人射角度的反射χ射、_強錢化。分析部 73連接於分析部4，將相對於X射線的人射角度的反射X 射線的強度變化輸出至分析部4。分析部4進行以下處理， 即’執行相對於X射線的人射角度的反射χ射線的強度變 化的模擬（simulation)，並對從分析部73輸入的反射χ射 線的強度變化的啦絲與模減果進㈣較，以對模擬 參數（parameter)進行最佳化。分析部4通過對模擬參數 進灯最佳化，從而計算試料6的各層的膜厚、密度以及粗 糙度（roughness)。如此，X射線源71、反射X射線檢測 部72、分析部73以及分析部4通過XRR (χ射線反射率 ，）來進行試料6的分析。試料檢查裝置的其他的結構與 實施方式1雜，對於對應的部分標__號並省略其 說明。 、 實施方式2的試料檢查裝置在可利用XRR的情況 下’可通過XRR來對試料6中的—層的厚度進行計測， 在難以湘XRR崎況下’可藉由觀偏光法來計測層 的厚度。如此’實施方式2的試料檢查裝置可使用與試料 6相應的適當的方法來制各層的厚度，無須根據試料6 的不同來區分使用試料檢查裝置。而且，與實施方式】同 樣地，實施方式2的試料檢查裝置餘錢結構的試料6 中所含的多個層’可分職用朗減的適#的方法來計 測厚度’無彡！根據成為測定對象的層來區分使用試料檢查 18 201205062 裝置。因而，檢查試料6時的工夫變得簡便。而且，實施 方式2的試料檢查裝置可通過XRR來對試料6中所含的 各層的密度以及粗糙度進行計測。 λ而且，實施方式2的試料檢查裝置可通過XRR來對 捕6中的·層的厚度進行制，並通過則偏光法來對 同一層的折射率等的光學特性進行計測。因而，在實施方 式2 也能夠更南精度地對試料6中所含的各層的折射 ^等的光學特性和厚麵行制。而且，實施方式2的試 查，置通過平行地進行職的處理和橢圓偏光法的 的侧能触實财式1 _地，赌_來财層結構 的试料6中所含❹個層各自的厚度進行計測。 =，實施方式2的試料檢查裝置除了職以及擴 法以外’雜通财曼散射光糾來賴料 =計=結晶化度等的結構特性。拉曼散射光分析與xrr =仃地進行，實施方式2的蘭檢查裝置㈣ 式1同樣地，以短時間來對試料 ^方 性和厚度進行制。 …。s0化料的結構特 另外，在實施方式2中，表示了 :而進行XRR的形態，但本發 = 除了 XRR以外也能進行螢光χ射線 ^置也可為 ，查裝置也可為除了圖3所示的結構= 線源、螢光X射線檢測部22以及 更沾、備X射 且’試料檢查裝置也可為使為了進。的形態。而 的X射線的X射線源與為了進行 :照射至試料6 螢光X射線分析而照射 201205062 至試料6的X射線的X射線源共用化的形態。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是表示實施方式1的試料檢查裝置的結構的示意 圖。 圖2是表示試料的例子的示意剖面圖。 圖3是表不實施方式2的試料檢查裝置的結構的示意 圖。 【主要元件符號說明】 4 :分析部 6 :試料 11 :入射部 12 :反射光受光部 13 :分析部 21 : X射線源 22 :螢光X射線檢測部 23 :分析部 31 :雷射光源 32 :拉曼散射光檢測部 33 :分析部 34 :分束器 201205062 51 :試料台 52 :驅動部 61 :透明層 62 : η型層 63 : ρ型層 64 ··金屬層 71 : X射線源 72 :反射X射線檢測部 73 :分析部 21‘L _ in the present invention' can measure the thickness of the sample using an appropriate method corresponding to the sample. Since it is not necessary to distinguish the use of the sample inspection device depending on the sample, the present invention can provide an excellent effect, for example, it is easy to check the sample. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the invention. [Embodiment] Hereinafter, the present invention will be specifically described based on the drawings showing the embodiments. (Embodiment 1) FIG. 1 is a schematic view showing a configuration of a sample testing device according to Embodiment 1. The sample inspection device includes a sample stage 51 on which the sample 6 is placed, an incident portion 11 on which the linearly polarized light is incident on the sample 6 on the sample stage 51, and a reflected light receiving unit 12 that receives the reflected light from which the incident light is reflected by the sample 6. In Fig. i, incident light and reflected light are indicated by dotted arrows. The incident portion 丨丨 is an optical system including a white light source such as a xenon lamp, a slit, and a polarizing element that converts white light into linearly polarized light. The reflected light receiving unit 12 includes a phase modulator that modulates the phase of the reflected light, an analyzer, a spectroscope that splits the light that has passed through the analyzer, and a photodetector that detects the split light. Optical system. The analysis unit 13 that analyzes the light reception result of the reflected light of the reflected light receiving unit 12 is connected to the reflected light receiving unit 12. The reflected light receiving unit 12 outputs the detected intensity of the light corresponding to the phase modulation to the analyzing unit 13 in accordance with the different wavelengths after the splitting. The analysis unit 13 8 201205062 is based on the detection intensity of light corresponding to the modulation of the phase, 'the polarization component perpendicular to the incident surface of the sample 6 for each wavelength, and the polarization component parallel to the incident surface, that is, P-polarized light. The phase difference Δ and the reflection amplitude ratio Ψ of the s-polarized light and the p-polarized light are measured. △ and Ψ are measured values of the ellipsometry method. In this manner, the analyzing unit 13 acquires the Δ of the sample 6 and the change in the wavelength of the ψ. The incident portion 11, the reflected light receiving portion 12, and the analyzing portion 13 correspond to the ellipsometer portion in the present invention, and the sample 6 is inspected by the ellipsometry. § The material inspection device further includes an X-ray source 21, an optical system (not shown) that irradiates X-rays generated by the X-ray source 21 to the sample 6, and fluorescence generated by the sample 6 by the X-ray irradiation. The X-ray detecting unit 22 that detects X-rays. At least the X-ray source 21, the sample stage 51, and the fluorescent X-ray detecting unit 22 are housed in a casing (not shown) for shielding the x-rays. In Fig. 1, the X-ray and the fluorescent X-ray ? X-ray source 21, which are incident on the sample 6 and the fluorescent X-ray ? X-ray source 21, are X-ray tubes which generate X-rays by causing the accelerated electrons to strike the gold (four) tree. The glory X-ray inspection ride 22 is disposed at a position where the glory X-ray generated from the sample 6 can be detected.罄 γ γ , , , ^ ^ The 恩 爱 χ χ ray detecting unit 22 is provided with a semi-coupling element. Qian Guangyu Radiographic Analysis Department 23. The fluorescent X-ray detecting unit 22 that analyzes the energy of the ray (energv) is outputted to the analyzing unit 23 with an electric signal proportional to the fluorescence of the ray (energv). . ° 'Intensity to select an electrical signal from the fluorescent X-ray detecting unit 22 201205063⁄4 to count the electrical signal of each signal intensity (c〇unt), thereby obtaining the wavelength of the fluorescent X-ray and the count value _, that is, the firefly The spectrum of the pupil ray (spectmm). The xenon ray source 2]1, the camping ray detecting unit 22, and the analyzing unit 23 correspond to the re-exposure portion of the present-day type, and the sample 6 is inspected by fluorescence X-ray analysis. It is shown that the optical path of the light of the eccentric light is in the same plane as the optical path of the X-ray used in the ray analysis of the material, but the sample inspection device may take the form in which the two optical paths are located on the plane intersecting each other. The dip material inspection device further includes: a laser light source 31; the laser light from the laser light source 31 is irradiated substantially perpendicularly to an optical system (not shown) of the sample 6, and is generated from the sample 6 by irradiation of the laser light. The beam-splitter 34 for separating the Raman scattered light and the Raman scattered light detecting portion 32. Laser-excited Raman scattered light is generated from the sample 6 by laser irradiation of the sample 6. The Raman scattered light is separated from the laser by the beam splitter 34, and is incident on the Raman scattered light detecting portion 32. In Fig. 1, the laser beam irradiated to the sample 6 and the Raman scattered light are indicated by arrows of a two-dot chain line. The Raman scattered light detecting unit 32 is an optical system including a filter, a spectroscope that splits the Raman scattered light, and a photodetector that detects the split light. The analysis unit 33 that analyzes the detection result of the Raman scattered light is connected to the Raman scattered light detecting unit 32. The Raman scattered light detecting unit 32 outputs the detected intensity of the Raman scattered light to the analyzing unit 33 in accordance with the different wavelengths after the splitting. The analyzing unit 33 acquires the relationship between the wavelength of the Raman scattered light and the detected intensity, that is, the spectrum of the Raman scattered light. The laser light source 31, the beam splitter 34, the Raman scattered light detecting unit 32, and the analysis 201205062, the section 33 examines the sample 6 by performing a light analysis on the three types of glasses of Shubenfa. Pulling the person in charge The drive unit 52 that moves up and down using the motor (m〇t〇r) is connected to the sample stage 51. By moving the driving unit & : up and down, the sample 6 is moved up and down, and the focus position of the linearly polarized light incident on the sample 6 and the focus position of the laser beam irradiated by the laser in the sample 6 can be adjusted. When the sample 2 has a multilayer structure, the driving unit 52 can adjust the focus position to shoot the layer to be measured in the sample 6 by a person. Further, the focus position of the driving material 6 (four) is moved, so that the layer to be measured by the elliptical polarization method and the Raman scattered light analysis can be batch-mailed, and tM3, 23, and 33 and the driving unit 52 are connected to the analysis unit 4. ί IT IT data ((4) input and output interface (5) ―), ^ into, the input unit of the self-instruction's instruction, the k-interval required to perform various operations, and the program ((4) g-storage) And the output of the printer (printei>) that outputs the analysis results: $8. The analyzing unit 13 changes the wavelength of Δ and Ψ of the sample 6 to the octave 4, and the analyzing unit 23 outputs the spectrum of the ray ray to the minute, and the occlusion portion 33 outputs the spectrum of the Raman scattered light to the analysis. Department 4. The blade 4 has a function of controlling the operation of the drive unit 52. A schematic cross-sectional view showing an example of the sample 6. Figure 2: The solar cell component of the gold II!f structure. The sample 6 was laminated with a metal, a p-type layer 63 composed of a p-type semiconductor, an n-type layer 62 composed of an n-type half 11 201205062 conductor, and a transparent layer 61. The metal layer 64 is a back surface electrode made of a metal such as Cu or Mo. The transparent layer 61 is a transparent electrode made of Zn ITO or the like. The p-type layer 63 and the n-type layer 62 are made of a semiconductor such as polycrystalline silicon, amorphous silicon or a compound semiconductor, and are light absorbing layers of solar cell elements. Simplified in Figure 2, the actual solar cell component contains more layers. Further, in the present invention, it is also possible to inspect a sample having a single layer structure. The case where the thickness of the transparent layer 61 in the sample crucible shown in Fig. 2 is measured is considered. When the composition of the transparent layer 61 is different from that of the n-type layer 62, the p-type 63, and the metal layer 64, the thickness can be measured by ray analysis. At this time, the X-ray source 21 irradiates the X-rays to the sample 6, the fluorescent ray detecting unit 22 detects the fluorescent ray rays from the sample 6, and the analyzing unit 23 acquires the spectrum of the fluorescent X-rays. Processing ^ that is, extracting the energy of the elements contained in the transparent layer 61 from the spectrum of the fluorescent X-rays, which are not contained in the other layers, and based on the extracted fluorescent ray-ray intensity and the ship The thickness of the transparent layer 61 is calculated by determining the concentration of the element in the transparent layer 61. And when the elements in the transparent layer 61 are contained in the n-type layer 62, the p-type layer 63, and the gold (four) 64 hetero-layer, it is difficult to use the glory ray analysis to thickness, but it can be __polarized Measure the thickness. The driving unit 52 moves the sample stage 51 up and down, so that the focal point of the linearly polarized light incident on the incident portion η is located on the transparent layer 61 h. The human emitting portion u causes the linearly polarized light to enter the transparent layer 61 of the sample 6, and the complementary light portion 12 The reflected light of the transparent layer 61 is received, and the analyzing unit 13 acquires the Δ of the transparent layer 61 and the wavelength change of ψ 12 201205062. The analysis unit 4 performs a process of comparing the wavelength change of Δ and 导出 derived from the refractive property of the assumed transparent layer 61 and the thickness, and the wavelength change of Δ and 实际 which are actually obtained, on the one hand, On the one hand, the optical characteristics and the thickness are changed, and the optical characteristics and thickness of the transparent layer 61 are obtained. As described above, in the case where the sample inspection device according to the first embodiment can utilize the fluorescent X-ray analysis, the thickness of the layer in the test material 6 can be measured by the fluorescence ray ray analysis. In the case of the layer, the thickness of the layer can be measured by ellipsometry. As described above, regardless of the sample 6, the sample inspecting apparatus of the first embodiment can measure the thickness of each layer by an appropriate method corresponding to the sample 6. Since it is not necessary to distinguish the inspection device according to the difference of the sample 6, the time for checking the sample 6 becomes simple. Further, in the case of the sample 6 of which the composition is unknown, the composition analysis can also be carried out by fluorescent X-ray analysis. Next, the case where the optical characteristics of the transparent layer 61 are measured is considered. When the composition of the transparent layer 61 is different from the layer 64 of the n-type layer 62, the χ^ χ 特 以 以 光 光 首先 首先 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The ray spectrum is analyzed. Thus, the thickness of the ruthenium layer 61 is calculated, and the calculated thickness of the transparent layer 61 is stored in the first shot portion η, and then the linear polarized light is incident on the transparent layer q of the sample 6 The following processing 'i.e., fixing the value of the thickness of the transparent layer 61 to the change of the haze of the transparent layer 61 by the fluorescence and the ray analysis' repeatedly repeats the 1 1201205062 derived from the optical characteristics and thickness of the transparent layer 61. The optical characteristics of the transparent layer 61 are obtained by comparing Δ and the wavelength change of Ψ with the actually obtained Δ and the wavelength change of ψ. As described above, in the present invention, the thickness of one layer in the sample 6 can be measured by fluorescent X-ray analysis, and the optical characteristics such as the refractive index of the same layer can be measured by ellipsometry. A single ellipsometer cannot measure the optical properties and thickness of the layer independently. In contrast, in the present invention, the optical characteristics and thickness of the layer can be measured independently. Therefore, according to the present invention, it is possible to more accurately measure the optical characteristics and thickness of the refractive index or the like of each layer contained in the sample 6. Further, in the sample inspection device according to the first embodiment, the analysis unit 4 can control the operation of the incident portion 11 and the X-ray source 21, and simultaneously operate the incident portion u and the X-ray source 21. The visible light incident on the sample 6 by the incident portion 11 is different from the wavelength region of the X-ray irradiated to the sample 6 by the X-ray source 21, and thus does not interfere with each other. Further, the reflected light receiving unit 12 is connected to the (four) reflected light and the wavelength region of the fluorescent x-ray detected by the fluorescent X-ray detecting unit 22, and therefore can be detected simultaneously without interfering with each other. That is, the sample inspection split of the first embodiment can simultaneously acquire the Δ and the change of the sample 6 and the fluorescence X-ray spectrum of the sample 6. The analysis unit 4 performs the following processing, that is, the Δ of the sample 6 obtained according to (4) and the wavelength change of ψ and the ray spectrum, and the sample characteristics of the sample 6 can be determined separately and the sample inspection device of the method 1 can be shortened. Next, the optical secret thickness of the refraction of each layer contained in the crucible 6 is counted, and the case where the thickness of the transparent layer 61 in the sample 6 and the thickness of the metal layer 201205062 is measured is considered. Since it is difficult to measure the thickness of the metal 4 by the ellipsometry, the metal layer is measured by fluorescence X-ray analysis at 64 degrees, and the thickness of the transparent layer 61 is measured by ellipsometry. The flooding and the weeping 52 cause the incident portion u to illuminate the light, and the incident portion 11 causes the linearly polarized light to enter the transparent layer 试 of the sample 6, and the light-receiving portion 12 receives the reflected light of the transparent layer 61. The analyzing unit 13 selects the Δ of the bright layer 61 and the wavelength change of ψ. The analysis unit 4 performs a method of determining the thickness / of the transparent layer 61 based on the wavelength changes of Δ and ψ. Further, the X-ray source 21 causes the X-rays to enter the sample 6, the fluorescence χ = line detecting unit 22 detects the fluorescent X-rays from the simple 6, and the analyzing unit 23 acquires the spectrum of the fluorescent X-rays. The analysis unit 4 performs a process of extracting, from the spectrum of the fluorescent X-rays, the fluorescence X-ray intensity of the elements contained in the other layers among the elements contained in the metal layer 64, and extracting the fluorescence according to the extracted fluorescence. The X-ray intensity is used to calculate the thickness of the metal layer 64. As described above, the sample inspecting apparatus according to the embodiment 对于 can measure the thickness of the layer by the fluorescent X-ray analysis of the layer which can be analyzed by the fluorescent X-ray in the plurality of layers included in the sample 6, for the available ellipse The layer of the polarizing method can measure the thickness of the layer by ellipsometry. As described above, the sample inspecting apparatus according to the first embodiment can measure the thickness of each of the layers of the sample 6 having a multilayer structure by an appropriate method corresponding to the layer. It is not necessary to use the sample inspection device according to the layer to be measured. The thickness of the plurality of layers can be measured by the same sample inspection device. Therefore, it is easy to check the sample. -β Further, the sample inspecting apparatus of the embodiment i can simultaneously operate the incident portion u and the radiation source 21 of the 201205062, thereby simultaneously acquiring the Δ and the wavelength change of the transparent layer 61 and the fluorescent X-ray spectrum of the metal layer 64. The analysis unit 4 performs the processing of independently determining the thickness of the transparent layer 61 and the thickness of the metal layer 64 based on the Δ of the transparent layer 61 and the wavelength change of ψ and the fluorescent X-ray spectrum of the metal layer 64. Therefore, the sample inspecting apparatus of the embodiment can be used to measure the thickness of each of the plurality of layers included in the sample 6 of the money structure. Further, the sample inspection device of the first embodiment can perform Raman scattered light analysis of the sample 6. The layer to be subjected to Raman luminescence analysis measurement is referred to as an n-type layer 62. The drive unit 52 moves the sample stage 51 up and down so that the focus of the laser light from the laser light source 31 is located on the n-type layer 62. The laser light source η irradiates the laser beam to the n-type layer 62, the Raman scattered light detecting portion 32 detects the Raman scattered light from the n-type layer 62, and the analyzing portion 33 acquires the spectrum of the Raman scattered light from the layer 62. The analysis unit 4 performs a process of calculating the surname characteristics such as the degree of crystallinity of the n-type layer a based on the Raman scattered light spectrum. Thereby, for example, the degree of crystallization of the plurality of (tetra) or non-stones contained in the n-type layer 62 can be measured. Further, by Raman scattered light analysis, in addition to the degree of crystallization, other structural characteristics such as the n-type layer 62_stress can be measured. Further, Raman scattered light analysis can also be performed for layers other than the n-type layer 62. As described above, in the sample inspection device of the first embodiment, in addition to the circular polarization method and the fluorescent X-ray analysis, the structural characteristics such as the degree of crystallization can be measured for each layer in the sample 6 by Raman scattered light analysis. Since it is not necessary to use other sample inspection devices for Raman scattered light analysis, it is easy to check the time when the sample is inspected at 201205062. Moreover, the laser beam irradiated by the laser source 31 to the sample 6 is different in the wavelength range of the second:: and the ray is different from the ray. Because the feeding inspection device can measure the structural characteristics and thickness of the 钇a 曰 degree# of the sample 6 in a short time. (Embodiment 2) FIG. 3 is a schematic view showing a configuration of a sample testing device according to a second embodiment. In place of the X-ray source 21, the fluorescent x-ray detecting unit 22, and the analyzing unit 23', the sample testing device includes a reflection ray for detecting the reflected x-rays reflected by the X-ray sample 6 from the X-ray source 71. The ray detecting unit 72 and the analyzing unit 73 that analyzes the detection result of the reflected x-ray. Further, the sample inspection device includes an optical system (not shown) that irradiates X-rays from the X-ray source 71 to the sample 6, and changes the incident angle of the X-rays with respect to the sample 6 during the irradiation of the X-rays. . The X-ray source 71 is a position where the X-ray tube 'reflecting X-ray detecting unit 72 is disposed to detect reflected X-rays from the sample 6. The reflected X-ray detecting unit 72 includes a detecting element that counts the X-ray intensity, and outputs a signal indicating the intensity of the detected reflected X-ray to the analyzing unit 73. The X-ray source 71, the reflected X-ray detecting unit 72, and the analyzing unit correspond to the X-ray measuring unit in the present invention. The analysis unit 73 classifies the electrical signals from the inverse 17 201205062 X-ray detecting unit 72 according to the incident angle of the X-rays, and acquires the relationship between the incident angle of the x-rays with respect to the sample 6 and the intensity of the reflected x-rays, that is, The reflection is 相对, _ strong money relative to the X-ray _ human angle. The analysis unit 73 is connected to the analysis unit 4, and outputs a change in intensity of the reflected X-rays with respect to the human radiation angle of the X-rays to the analysis unit 4. The analysis unit 4 performs a process of performing a simulation of a change in the intensity of the reflected x-rays with respect to the human radiation angle of the X-rays, and a change in the intensity of the reflected x-rays input from the analysis unit 73. Subtract the fruit into (4) to optimize the simulation parameters. The analysis unit 4 calculates the film thickness, density, and roughness of each layer of the sample 6 by optimizing the simulation parameters. In this manner, the X-ray source 71, the reflected X-ray detecting unit 72, the analyzing unit 73, and the analyzing unit 4 perform analysis of the sample 6 by XRR (X-ray reflectance). The other configuration of the sample inspection device is the same as that of the first embodiment, and the corresponding portion is marked with a __ number, and the description thereof is omitted. In the sample inspection device according to the second embodiment, when the XRR can be used, the thickness of the layer in the sample 6 can be measured by XRR, and the layer can be measured by the polarization method in the case of difficulty in XRR. thickness. In the sample inspecting apparatus of the second embodiment, the thickness of each layer can be made by an appropriate method corresponding to the sample 6, and it is not necessary to distinguish the sample inspecting apparatus according to the difference of the sample 6. Further, in the same manner as in the embodiment, the plurality of layers included in the sample 6 of the sample structure of the sample inspection device of the second embodiment can be measured by the method of "reducing the thickness". The sample inspection is used according to the layer to be measured. 18 201205062 Device. Therefore, the time for checking the sample 6 becomes simple. Further, in the sample inspecting apparatus of the second embodiment, the density and roughness of each layer contained in the sample 6 can be measured by XRR. Further, in the sample inspecting apparatus of the second embodiment, the thickness of the layer in the trap 6 can be made by XRR, and the optical characteristics such as the refractive index of the same layer can be measured by the polarizing method. Therefore, in the second embodiment, the optical characteristics and the thick surface of the respective layers contained in the sample 6 can be more accurately determined. In addition, in the test of the second embodiment, each of the layers included in the sample 6 of the gambling-conducting layer structure is disposed by the process of performing the work in parallel and the side energy of the ellipsometry method. The thickness is measured. = The sample inspection device according to the second embodiment has a structural characteristic such as a degree of crystallinity, such as a degree of crystallization, in addition to the job and the expansion method. The Raman scattered light analysis and the xrr = 仃 were performed, and the blue inspection device (four) of the second embodiment was used to prepare the sample and the thickness in a short time. .... In addition, in the second embodiment, the configuration of the s0 chemical material is shown in the form of XRR. However, the present invention may be performed in addition to the XRR, and the detection device may be in addition to the image. The structure shown in Fig. 3 = the line source, the fluorescent X-ray detecting unit 22, and the more immersed, prepared X-ray and 'sample inspection device may be made for advancement. Shape. The X-ray source of the X-ray is shared with the X-ray source that irradiates the X-ray of 201205062 to the sample 6 to be irradiated to the sample 6 by the X-ray analysis. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a configuration of a sample testing device according to a first embodiment. Fig. 2 is a schematic cross-sectional view showing an example of a sample. Fig. 3 is a schematic view showing the configuration of a sample testing device according to a second embodiment. [Explanation of main component symbols] 4 : Analysis unit 6 : Sample 11 : Incident portion 12 : Reflected light receiving portion 13 : Analysis portion 21 : X-ray source 22 : Fluorescent X-ray detecting portion 23 : Analysis portion 31 : Laser light source 32 : Raman scattered light detecting unit 33 : Analysis unit 34 : Beam splitter 201205062 51 : Sample stage 52 : Driving unit 61 : Transparent layer 62 : n-type layer 63 : p-type layer 64 · · metal layer 71 : X-ray source 72 : reflected X-ray detecting unit 73 : analyzing unit 21