CN113834784A - Device for detecting wide bandgap semiconductor electronic device - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/19—Dichroism
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Abstract
The invention discloses a device for detecting a wide bandgap semiconductor device, which comprises a heating light component, a detection light incidence component, a light path guide component, a detection reflected light acquisition component and a sample surface monitoring component, wherein the heating light component generates pulse heating laser; the detection light incidence assembly comprises a first detection laser and a second detection laser, and generates continuous lasers with different wavelength bands, the first detection laser is used for detecting the heat reflection of the surface of the metal material, and the second detection laser is used for detecting the heat reflection of the surface of the wide bandgap semiconductor; the single pulse laser and the two continuous lasers are not coaxial initially and pass through the light path guide assembly, and the three beams of light are coaxial finally on the surface of the sample, so that the device has the function of detecting the heat conduction property of the material with the metal surface and the wide bandgap semiconductor surface.
Description
Technical Field
The present invention relates to a thermal reflection measurement technique, and more particularly, to an apparatus and method for testing a wide bandgap semiconductor electronic device.
Background
Under the definite traction of application requirements of 5G communication, new energy automobiles, photovoltaic inverters and the like, third-generation wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), aluminum gallium nitride (AlGaN), zinc oxide (ZnO), aluminum nitride (AlN), diamond (diamond) and gallium oxide (Ga)2O3) And the like, have received significant development. With the increasing demands of various applications, the power density of wide bandgap semiconductor electronic devices is increasing, which brings about a severe heat dissipation problem.
Wide bandgap semiconductor electronic device processing involves the growth of multiple materials, such as metal electrodes, dielectric layers, and semiconductor heteroepitaxial layers. From these different processes, a multi-layer structure is grown that is formed from a combination of different materials. The heat dissipation properties of the multilayer structure are determined by two factors: 1. the thermal conductivity of each layer of material; 2. the thermal interface resistance between layers is formed due to lattice mismatch, defects and the like. The characterization of thermal conductivity properties is critical in device development and production.
The traditional thermal property characterization methods, such as a steady-state hot plate method, a transient hot wire method, a laser flash method and the like, are not suitable for thermophysical property detection of wide-bandgap semiconductor electronic devices, because the methods do not have test resolution on micro-nano-scale semiconductors. The currently mainstream micro-nanometer resolution test method is a heat reflection method, which is developed based on the heat reflection principle of metal materials (i.e. the reflectivity change of the surface of the material is in direct proportion to the temperature change). The method can be summarized as follows: emitting a beam of pulsed light to heat the surface of the metal, so that the surface temperature of the material changes transiently; emitting another beam of light to enable the center of the light spot of the other beam of light to coincide with the center of the pulse heating light spot on the surface of the material; the change of the surface temperature of the material causes the change of the light intensity of the reflected light of the second beam of light, and the detector detects the change of the light intensity of the reflected light (namely the temperature change); and fitting the light intensity change signal through a heat transfer model to obtain the heat conductivity and interface thermal resistance parameter values of the material. The method requires a layer of thin film metal on the surface of the material, so the method is also generally called a metal heat reflection method (see the attached figure 1 in the specification). The detection is generally arranged after a device finishes a metal electrode plating process, and can test the interface thermal resistance between metal and wide bandgap semiconductor epitaxy to judge the bonding quality of a metal electrode and test the self thermal property (wide bandgap epitaxial film thermal conductivity and interface thermal resistance between epitaxy/substrate) of a wide bandgap epitaxial material to evaluate the heat dissipation capacity of the wide bandgap epitaxial material. And because the method only needs the surface of the sample with metal and does not depend on the type of the material below the metal, the method can also be regarded as a universal detection method (namely, the method is suitable for detecting various materials). However, feedback is slow because it must be detected after the metallization level process, which can cause the test to be too late. When large-batch detection is carried out on the wide bandgap epitaxial wafer, if the wafer is plated with metal, the destructive detection consumes a large amount of time and cost. In addition, for a metal-plated wide bandgap epitaxial structure, the method needs to analyze a plurality of unknown variable parameters at the same time, brings great uncertainty to a test result, and influences the test precision.
Recently, a heat reflection system dedicated to wide bandgap gan wafers has been developed, which has the capability of direct inspection of gan epitaxial structures without the aid of metal (see fig. 1 right in the specification). The method has the advantages that: the heat conductivity and the defects of the gallium nitride epitaxial wafer can be tested in advance without performing a metal plating treatment process on the gallium nitride epitaxial wafer, so that the feedback is realized quickly. However, this method is limited in that it is impossible to work with materials whose surfaces are subjected to electrode processing. Considering the diversity of the growth process of wide bandgap semiconductor devices (such as gan, sic, etc.), it is desirable to have a compromise between testing the wide bandgap semiconductor epitaxial materials before and after plating the electrodes. Before the electrode plating process, the quality of the wide bandgap epitaxial material is detected to realize timely feedback, detection is performed again after the electrode plating process, whether the electrode process changes the material quality is detected, and the bonding quality of the electrode and the wide bandgap epitaxy can be detected (as shown in figure 2 of the figure). According to the detection scheme, two independent systems, namely a metal heat reflection system and a wide bandgap semiconductor heat reflection system, can be used for detection in different process links, however, the test cost and the process are greatly increased, and the problem of inaccuracy exists due to the fact that the two test systems are adopted, and the error of test data is large.
Disclosure of Invention
The invention realizes a testing device which has the function of detecting the heat-conducting property of a material with a metal surface and a wide bandgap semiconductor surface. The device is provided with a common pulse heating laser light path, and adopts two different detection light paths, wherein different detection lights correspond to a test metal surface and a wide bandgap semiconductor surface. In order to realize the test, a certain optical arrangement scheme is adopted to realize the coincidence of the centers of two detection laser spots and the same pulse heating spot on the surface of the sample.
The technical scheme of the invention is as follows:
a device for detecting a wide bandgap semiconductor device comprises a heating optical component, a detection light incidence component, a light path guiding component, a detection reflected light acquisition component and a sample surface monitoring component, wherein the heating optical component generates pulse heating laser; the detection light incidence assembly comprises a first detection laser and a second detection laser, and generates continuous lasers with different wavelength bands, the first detection laser is used for detecting the heat reflection of the surface of the metal material, and the second detection laser is used for detecting the heat reflection of the surface of the wide bandgap semiconductor; the light path guiding component comprises a first dichroic filter and a second dichroic filter; the dichroic filter is arranged on a light path, the plane of the filter and the incidence direction of the first beam of light form 45 degrees, the incidence angle of the second beam of light and the filter is 45 degrees, the incidence direction of the second beam of light and the incidence direction of the first beam of light form 90 degrees, and the first beam of light and the second beam of light are combined and coaxial after passing through the first dichroic filter to form first combined light; the plane of the second dichroic filter forms an angle of 45 degrees with the direction of the first combined beam light, the incident direction of the third beam light forms an angle of 90 degrees with the incident direction of the first combined beam light, and simultaneously forms an angle of 45 degrees with the plane of the second dichroic filter, all three beams of light are combined and coaxial after passing through the second dichroic filter, and finally the light beams are focused on the surface of a sample by a focusing lens; the three beams are pulse heating laser, first detection laser and second detection laser.
Further, the pulse heating laser has a pulse width ranging from tens of picoseconds (ps) to tens of nanoseconds (ns) and a frequency of less than 30 kHz. The principle of the laser wavelength selection basis is as follows: the photon energy corresponding to the selected wavelength is higher than the energy gap (forbidden bandwidth) of the wide forbidden band semiconductor to be detected. The relationship between photon energy and wavelength is: e ═ hc/λ, where λ is the wavelength of light, h is the planck constant, c is the speed of light, and E is the photon energy corresponding to the wavelength of λ. For example, when the wide bandgap semiconductor to be measured is gallium nitride, according to a relation between photon energy and wavelength, the photon energy with a wavelength less than 365nm is higher than the energy gap (3.45eV) of gallium nitride, the thickness of the gallium nitride to the light absorption layer with a wavelength less than 365nm is less than 100nm, the thickness of the metal to the absorption layer is less than 20nm, considering that the epitaxial thickness of the gallium nitride device is usually hundreds of nanometers to several micrometers, the uppermost metal film is usually tens of nanometers to hundreds of nanometers, and it is approximate that the light beam in the band heats both the metal and the gallium nitride on the surface of the material.
Further, at the initial position of the pulse light generation, a beam expanding lens is arranged to expand the pulse light, and the expansion multiple range is 2X-10X.
The detection light incidence component consists of two sets of light paths and generates two beams of continuous laser with different wavelength bands, namely a first detection laser and a second detection laser. The first detection laser is focused on the surface of the metal material and is reflected on the surface to form reflected light (namely a metal heat reflection signal), and the second detection laser is focused on the surface of the wide bandgap semiconductor and is reflected on the surface to form reflected light (namely the wide bandgap semiconductor heat reflection signal).
The detection light incidence assembly comprises a detection laser and a beam splitter, detection light emitted by the detection laser passes through the beam splitter, and then enters the dichroic optical filter by a reflector, and the incidence angle of the detection light and the optical filter is 45 degrees and forms 90 degrees with the incidence direction of pulse light; preferably, the beam splitter may be a combination of 1/2 wave plate, cubic polarization beam splitter and 1/4 wave plate, the detection light emitted by the detection laser sequentially passes through 1/2 wave plate, the beam splitter cubic polarization beam splitter and 1/4 wave plate, and the detection light is incident to the dichroic filter by the mirror. Further preferably, the detection laser emits polarized continuous laser light, which can be expressed as a vector sum of horizontally polarized light (p-light) and vertically polarized light (s-light); preferably, the 1/2 wave plate has a function of adjusting p light and s light in the passed polarization continuous laser light in a ratio of 0:100 to 100: 0.
Further, the first detection laser is polarized continuous light with the wavelength range of 400nm to 800 nm; the wave band is for metals such as aluminum, copper, platinum, nickel, molybdenum and gold, and SrRuO3、LaNiO3The alloy material has good heat reflection characteristic, and the thickness of a light absorption layer of the metal/alloy for the wave band is less than 20nm, so that the light is approximately considered to be reflected on the surface of the metal/alloy material.
Further, the second detection laser is polarized continuous light, and the wavelength selection is based on the following principle: the photon energy corresponding to the selected wavelength is higher than the energy gap (forbidden bandwidth) of the wide forbidden band semiconductor to be detected; for example, when the wide bandgap semiconductor is gan, the photon energy with wavelength less than 365nm is higher than the energy gap (3.45eV) of gan, and the thickness of the absorption layer of gan is less than 100nm for this band, therefore, it is approximately considered that the light is reflected on the surface of gan.
Further, the absolute value of the difference between the second detection laser wavelength and the pulsed heating laser wavelength is at least greater than 10 nm.
Further, the light intensity ratio of the pulse heating laser to the detection laser is larger than 10: 1.
The single pulse laser and the two continuous lasers are not coaxial initially and pass through the optical path guiding component, and the three beams of light are coaxial at the surface of the sample finally (namely the centers of the light spots are coincident). The optical path directing components are as follows:
and arranging a dichroic filter, wherein the plane of the filter forms an angle of 45 degrees with the incident direction of the first beam of light, the incident direction of the second beam of light forms an angle of 90 degrees with the incident direction of the first beam of light, and simultaneously forms an angle of 45 degrees with the plane of the first filter, and the two beams of light are combined and coaxial after passing through the dichroic filter.
Further, the dichroic filter can be a short-wave pass dichroic filter or a long-wave pass dichroic filter; further, if the light passes through the short wave, the light which is smaller than the cut-off wavelength in the two beams of light reaches the optical filter in full transmission, and the light which is larger than the cut-off wavelength reaches the optical filter in total reflection; if the light passes through the long wave, the light which is smaller than the cut-off wavelength in the two beams of light reaches the optical filter in a total reflection mode, and the light which is larger than the cut-off wavelength reaches the optical filter in a total transmission mode;
further, the three laser beams are arranged in order of small to large wavelengths as A, B, and C, and the combined beam should be composed of A and B, or B and C. If consisting of a and B, the cut-off wavelength of the dichroic filter should be chosen to be somewhere between a and B; if B and C are used, the cut-off wavelength of the dichroic filter should be chosen to be somewhere between B and C. And arranging a second dichroic filter, wherein the plane of the filter forms an angle of 45 degrees with the light beam combination direction, the incidence direction of the third light forms an angle of 90 degrees with the light beam combination incidence direction, and forms an angle of 45 degrees with the plane of the second filter, and all three beams of light are combined to be coaxial after passing through the second dichroic filter.
Further, the dichroic filter can be a short-wave pass dichroic filter or a long-wave pass dichroic filter;
further, if the first combined beam consists of a and B, the cut-off wavelength of the second dichroic filter should be selected to be a value between B and C; if the first combined beam consists of B and C, the cut-off wavelength of the second dichroic filter should be chosen to be somewhere between a and B. The three combined beams of light pass through the same focusing mirror and are coaxial on the surface of the sample.
Further, the focusing multiple of the objective lens ranges from 5X to 20X.
After the first or second detection laser is reflected on the surface of the sample, the detection reflected light collection assembly is used for guiding the reflected light to be finally received by the photoelectric detector.
The detection reflected light collection assembly shares the heating light assembly, the light path guide assembly and the focusing mirror, the dichroic filter, the reflector and the beam splitter in the detection light incidence assembly.
The reflected light of the detection light passes through the focusing mirror, the dichroic filter, the reflector and the beam splitter in sequence, the reflected light is partially reflected after passing through the beam splitter to realize the separation of a reflected light path and an incident light path, and then the reflected light is detected by a subsequent detection device; preferably, the beam splitter is a combination of an 1/2 wave plate, a cubic polarization beam splitter and a 1/4 wave plate, the reflected light is totally reflected after passing through the 1/4 wave plate and the cubic polarization beam splitter to realize the separation of the reflected light path and the incident light path, and the optical components are used in combination, so that the detection light reflected light path and the incident light path are separated at the cubic polarization beam splitter and the minimum light intensity loss is kept.
Furthermore, the detection light reflection assembly also comprises a convex lens, a filter plate and a photoelectric detector; the convex lens is used for focusing the reflected light beam; the filter is used for filtering a small amount of pulse laser reflected at the same time; the photoelectric detector is used for receiving the reflected light signal and converting the reflected light signal into an electric signal; the photoelectric detector can be a photoelectric detector with an amplification function or a balanced amplification detector; if a balanced amplification detector is used, a portion of the light to be separated from the incident continuous light is input to one of the ports of the balanced amplification detector, and the reflected light is input to the other port. The received signal is in the form of a transient variation curve of light intensity along with time; the unknown thermal parameters to be measured are obtained by fitting the test curve with the theoretical model.
And the sample surface monitoring assembly is used for monitoring the position of the laser spot on the surface of the sample in real time. The assembly comprises a white light source, a light beam sampling mirror, a convex lens and a CCD camera.
The white light source is used for providing white light illumination to the surface of the sample; the light beam sampling mirror is arranged on the laser and white light reflection path, forms an angle of 45 degrees with the reflected light, samples the reflected light in a certain proportion and reflects the reflected light, the proportion is 1-10%, and the rest light transmits; the convex lens focuses the reflected light into the CCD camera; the CCD camera is used for monitoring the spot positions of the pulse laser and the continuous laser in real time.
The detection device system provided by the invention integrates the function of testing a semiconductor sample with metal on the surface and wide forbidden band, wherein the metal can be aluminum, copper, platinum, nickel, molybdenum, gold and the like, and SrRuO3、LaNiO3The wide band gap semiconductor can be a semiconductor material with a band gap larger than 3eV, such as 4H-silicon carbide (3.26 eV), 6H-silicon carbide (3.03eV), zinc oxide (3.37eV), gallium nitride (3.45eV), aluminum gallium nitride (3.45eV-6eV), aluminum nitride (6eV), gallium oxide (5.8eV), diamond (5.45eV), and the like. Compared with two sets of independent test systems aiming at metal and wide bandgap semiconductor samples, a large number of optical/electrical components are saved, and therefore cost is greatly reduced.
The device can also be integrated on metal or semiconductor deposition equipment to carry out online quality monitoring during material deposition. Therefore, the system has the application potential of carrying out material detection and quality control on a semiconductor production line, has the advantages of real time, rapidness, simple process, low cost and the like, and can monitor the quality problem of semiconductor devices in the production line in real time.
The detection device can realize the same-point detection of the wide bandgap semiconductor epitaxial wafer and the device after metal deposition, ensures the accuracy of the detection result, and avoids the deviation of the detection result caused by the change of the detection position point when two systems detect, and can not obtain accurate measurement data.
Drawings
FIG. 1 is a schematic diagram of a conventional metal heat reflection method for testing a material with a metal surface layer; fig. 1 is a schematic diagram of a conventional wide bandgap gan thermal reflection method for testing a material whose surface layer is gan.
Fig. 2 is a schematic view of inspection in a wide bandgap semiconductor device manufacturing line.
Fig. 3 is a schematic view of an optical system of embodiment 1.
FIG. 4 is a graph showing the characteristics of the heat reflection signal measured in example 1.
Fig. 5 is a schematic view of an optical path directing component of the optical system of embodiment 2.
Fig. 6 is a schematic view of an optical system of embodiment 3.
Fig. 7 is a schematic view of an optical system of embodiment 4.
Wherein the drawings in the specification are identified as follows: an ultraviolet pulse laser-1000, a beam expander-1100, a first detection laser-2300, a first 1/2 wave plate-2500, a first cubic polarization beam splitter-2600, a first 1/4 wave plate-2700, a second detection laser-2900, a second 1/2 wave plate-3100, a second cubic polarization beam splitter-3200, a second 1/4 wave plate-3300, a short wave pass dichroic filter-1200, a first mirror-2800, a second mirror-3400, a long wave pass dichroic filter-1300, a focusing mirror-1700, a beam sampling mirror-1400, a first convex lens-3500, a first filter-3600, a first photoelectric detector-3700, a second convex lens-3800, a second filter-3900, a second photoelectric detector-4000, a second detection laser-3800, a first cubic polarization beam splitter-3200, a second 1/4 wave plate-3300, a short wave pass dichroic filter-1200, a first mirror-2800, a second mirror-3400, a long wave pass dichroic filter-1300, a focusing mirror-1700, a beam sampling mirror-1400, a second convex lens-3500, a second filter, a third filter, a fourth filter, an oscillograph-4200, a third convex lens-1500, a CCD camera-1600, a white light source-1900, a convex lens-6800 and a convex lens-7200.
Detailed Description
The technical solutions of the present invention are described in detail below with reference to the accompanying drawings and embodiments, and it should be understood that the embodiments described herein are only for the purpose of explaining the present invention and are not intended to limit the present invention. It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a type known to those of ordinary skill in the art. Additionally, value ranges are given herein for certain parameters, while exact values are given for certain parameters, but it is understood that the exact values can be approximated to corresponding values within acceptable error tolerances or design constraints. In addition, the selected optical/electrical components are adapted to the wavelength band of the laser used, ensuring that energy is not significantly lost and that the optical/electrical components are not damaged due to inappropriate wavelengths, unless otherwise specified.
The test device can be divided into several components, including: the device comprises a heating light assembly, a detection light incidence assembly, a light path guiding assembly, a detection reflected light collecting assembly and a sample surface monitoring assembly. The heating light assembly is used for generating pulsed light and guiding the light to the surface of the sample to be heated; the detection light incidence assembly is used for generating detection laser; the light path guiding component guides the pulse light and the detection light to be coaxial at the surface of the sample (namely the centers of the light spots coincide); the detection reflected light collection component guides the detection light reflected from the sample to the light detector to be received; and the sample surface monitoring assembly is used for judging the position of the pulse light spot on the surface of the sample.
Test device embodiments are further described based on the device overview above.
Example 1:
this embodiment describes a testing apparatus for a gallium nitride device, and fig. 3 is a schematic diagram of the testing apparatus in embodiment 1. Each component/element is described in detail below. It should be noted that some elements may belong to multiple components at the same time.
The heating light assembly includes: an ultraviolet pulse laser-1000 for generating a pulse laser having a pulse width ranging from several tens of picoseconds (ps) to several tens of nanoseconds (ns), a frequency of less than 30kHz, and a wavelength defined as 355nm in this embodiment; and the beam expanding lens-1100 is used for expanding the pulsed light emitted by the pulse laser 1000, and the expansion multiple range is 2X-10X.
The detection light incidence assembly comprises two light paths, wherein the light path I: a first detection laser-2300 for generating a first detection light, having a wavelength in this embodiment defined as 532nm, having an intensity ratio of less than 1:10 to the pulsed heating light, which is polarized and continuous and may be represented as a vector sum of horizontally polarized light (p-light) and vertically polarized light (s-light); a first 1/2 waveplate-2500, which converts the first probe beam into full p-light by adjusting 1/2 waveplate; the first cubic polarization beam splitter-2600 has the functions of partially transmitting p light and partially reflecting s light in the linearly polarized light beam which passes through; the p-light formed after conditioning via the first 1/2 wave plate 2500 is fully transmitted through the first cubic polarizing beam splitter 2600; a first 1/4 wave plate-2700 converts p light to circularly polarized light.
And a second optical path of the detection light incidence assembly, which is similar to the first optical path in arrangement, and comprises: a second detection laser-2900 for generating a second detection light, defined in this embodiment as 320nm, having an intensity ratio of less than 1:10 to the pulsed heating light, polarized and continuous, and expressed as a vector sum of horizontally polarized light (p-light) and vertically polarized light (s-light); a second 1/2 wave plate-3100 for converting the second probe light beam into full p-light by adjusting 1/2 wave plate; a second cubic polarization beam splitter-3200, in which the p light adjusted by the 1/2 wave plate 3100 is transmitted completely through the second cubic polarization beam splitter 3200; second 1/4 waveplate-3300 converts the p light to circularly polarized light.
The optical path directing assembly includes: the short-wave-pass dichroic filter-1200 is characterized in that a cut-off wavelength is a certain value within the range of 355nm-532nm, the short-wave-pass dichroic filter is arranged on a pulse heating laser light path, the plane of the filter and the incidence direction of pulse light form an angle of 45 degrees, the pulse light reaches the filter and then is transmitted completely, and the direction of the light is not changed. The long-wave pass dichroic filter 1300 has a cut-off wavelength within the range of 320-355nm, is also arranged on the pulse heating laser light path, the plane of the filter and the incidence direction of the pulse light form an angle of 45 degrees, the pulse light reaches the filter and is transmitted completely, and the direction of the light is not changed. The first reflector-2800 controls the incident angle of the first detection light when reaching the optical filter 1200 to be 45 degrees and forms an angle of 90 degrees with the incident direction of the pulse light, the first detection light is totally reflected at the optical filter 1200, and the light direction is consistent with the pulse light direction, so that two beams of light are coaxial; the second reflector-3400 controls the incidence angle of the second detection light to be 45 degrees when the second detection light reaches the optical filter 1300 and forms an angle of 90 degrees with the incidence direction of the pulse light, the second detection light is totally reflected at the optical filter 1300, and the light direction is consistent with the pulse light direction, so that the detection light and the pulse light are coaxial; and the focusing lens-1700 is used for focusing coaxial pulse light and probe light on the surface of the sample by a focusing multiple ranging from 5X to 20X and is also coaxial on the surface of the sample.
Detection reflected light collection assembly: after the first detection circularly polarized light is reflected from the surface of the sample, the light passes through the focusing mirror 1700, the light beam sampling mirror 1400 and the long-wave pass dichroic filter 1300 in the original path, is totally reflected when reaching the short-wave pass dichroic filter 1200, and is guided to the first 1/4 wave plate 2700 by the first reflector 2800; after 2700, the circularly polarized light is converted into s-polarized light, which is totally reflected by the first cubic polarization beam splitter 2600. Thus, with the first 1/2 wave plate 2500, the combination of the first cubic polarizing beam splitter 2600 and the first 1/4 wave plate 2700 is used such that the reflected and incident light paths are separated for detection by subsequent detection devices. The detection light assembly further comprises a first convex lens-3500, a first filter plate-3600 and a first photoelectric detector-3700 with an amplification function. The convex lens 3500 is used for focusing the reflected light beam; a first filter 3600 which is a long-wave pass or band-pass filter, if the long-wave pass is adopted, the cut-off wavelength is within a certain value within the range of 355nm-532nm, and if the band-pass filter is adopted, the central wavelength is 532nm, and the filter is used for filtering a small amount of pulse laser reflected at the same time; the first photodetector 3700 with an amplification function has a photoresponse of >0.1A/W, a gain of > 5kV/a, and a bandwidth of > 50MHz at a first probe light wavelength (532nm), and is used for measuring the reflected light intensity and amplifying the light intensity signal.
The optical path of the second detection reflected light collection assembly is similar to that of the first detection reflected light, after the second detection circularly polarized light is reflected from the surface of the sample, the second detection circularly polarized light is totally reflected when reaching the long-short wave-pass dichroic filter 1300 after passing through the focusing mirror 1700 and the light beam sampling mirror 1400 in the original path, and then is guided to the second 1/4 wave plate 3300 by the second reflecting mirror 3400; after 3300, the circularly polarized light is converted into s-polarized light, which is totally reflected by the second cubic polarization beam splitter 3200, and the reflected light path is separated from the incident light path, and then detected by a subsequent detection device. The detection light assembly also comprises a second convex lens-3800, a second filter plate-3900 and a second photodetector-4000 with an amplification function. The convex lens 3800 is for focusing the reflected light beam; a second filter 3900 which is a short-wave pass filter or a band-pass filter, wherein if the short-wave pass filter is short-wave pass, the cut-off wavelength is a certain value within the range of 320nm to 355nm, and if the short-wave pass filter is band-pass, the central wavelength is 320nm, and the second filter is used for filtering a small amount of pulse laser reflected at the same time; the first photoelectric detector 4000 with amplification function has a photoelectric responsivity >0.1A/W, a gain > 50kV/A and a bandwidth > 50MHz at a second detection light wavelength (320nm), and is used for testing the reflected light intensity and amplifying a light intensity signal.
The first 3700 or second photodetector 4000 amplifies the received reflected light signal and inputs the amplified reflected light signal to the oscilloscope 4200. The pulsed laser 1000 emits a trigger electrical signal, which is also input to the oscilloscope 4200, and this signal serves as a reference signal for the probe signal. An alternative to setting the reference signal is: laser emitted by the ultraviolet pulser can generate local scattering in a light path, a photoelectric detector is arranged on a scattered light path to collect scattering signals, and then the signals are input into an oscilloscope. Finally, the oscilloscope outputs a transient signal of the change of the light intensity of the reflected light along with time, the signal characteristics are shown in fig. 4, the light intensity of the reflected light is rapidly increased to the maximum value within a few nanoseconds corresponding to the starting point of each pulse reference signal, and then is rapidly attenuated until the next pulse signal comes. The time length between pulses is equal to 1/laser frequency, and the corresponding reflected light signals under each pulse signal are consistent, so that one reflected light signal can be arbitrarily selected for reading when data of the oscilloscope are read.
The sample surface monitoring assembly comprises: a light beam sampling mirror-1400, which reflects 1% -10% of the incident light at an angle of 45 degrees with the plane where the light beam sampling mirror is located, and transmits the rest light; a third convex lens-1500 for focusing light; a CCD camera-1600 for imaging; a white light source-1900 for providing illumination to the sample surface. After the laser and white light reflected by the surface of the sample reach the beam sampling mirror 1400, the small-proportion reflection is focused by the convex lens 1500 and captured by the CCD camera 1600.
Unknown thermal property parameter by measuring transientAnd fitting the state curve and the theoretical thermal model to obtain the target. The theoretical model solves a three-dimensional multi-layer (N) material heat conduction problem. For the ith layer of material, the physical property parameter includes thickness diHorizontal thermal conductivity ki-rThermal conductivity k in the vertical directioni-zDensity (p)i) And specific heat capacity (C)i) I is 1,2, …, N. Between the i-th and i + 1-th layers, there is an interfacial thermal resistance TBRi. In the fitting process, the layer material thermal conductivity (k)i-r,ki-z) And TBRiAs "unknown undetermined parameter", other parameters such as the thickness d of each layer of materialiDensity p ofiSpecific heat capacity CiThe radius of the pulsed light at the sample surface is usually used as a known model "input parameter". It is to be noted that, in the case where the upper surface of the material is metal, the thermal conductivity of the metal is also set as an "input parameter". These "input parameters" are typically referred to in the literature or obtained through additional experimentation. Where the spot radius is typically measured by the method of knife edge, or by a beam profiler. The fitting process may use common non-linear fitting methods such as the Levenberg-Marquardt algorithm. The data obtained by fitting needs to be subjected to error analysis, and the Monte Carnot error statistical method can be used as an error analysis method.
It should be noted that the detection of other wide bandgap devices, such as 4H-silicon carbide, 6H-silicon carbide, zinc oxide, aluminum gallium nitride, aluminum nitride, gallium oxide, diamond, can be achieved by the same principles and methods. Therefore, any similar detection arrangement scheme for other wide bandgap devices is subject to the present invention.
Example 2:
example 2 includes the same components and schemes as example 1, except that the light path directing components and the light path direction, there are other various design schemes, some of which are listed in fig. 5. There are other solutions similar to the optical path directing assembly presented in fig. 5, it should be noted that the principles used and the functions implemented are substantially the same, and therefore any similar solution is subject to the present invention.
Example 3:
example 3 comprises the same components and protocol as example 1, except that:
as shown in FIG. 6, the wavelength of the pulsed laser light 1000 is changed to 320nm, the first probe laser light 2300 is changed to 488nm, and the second probe laser light 2900 is changed to 303 nm. The cut-off wavelength of the short-wave pass dichroic filter-1200 is within a certain range of 320nm-488nm, and the cut-off wavelength of the long-wave pass dichroic filter-1300 is within a certain range of 303-320 nm.
A first filter 3600 which is a long-wave pass or band-pass filter, if the long-wave pass is detected, the cut-off wavelength is within the range of 320nm-488nm, and if the long-wave pass is detected, the central wavelength is 488 nm; the first photodetector 3700 with amplification has a photoresponse of >0.1A/W, a gain > 5kV/a, and a bandwidth > 50MHz at a first probe light wavelength (488 nm).
A second filter 3900 which is a short-wave pass or band-pass filter, wherein if the filter is short-wave pass, the cut-off wavelength is a certain value within the range of 303nm to 320nm, and if the filter is band-pass, the central wavelength is 303 nm; the first photodetector 4000 with amplification has a photoresponse of >0.1A/W, a gain of 50kV/a, and a bandwidth of 50MHz at the second detection light wavelength (303 nm).
In addition, other related optical/electrical components need to be adapted to the laser wavelength used, so as to ensure that the energy is not greatly lost and that the optical/electrical components are not damaged due to inappropriate wavelength.
Example 4:
FIG. 7 is a schematic view of the test apparatus of example 4. The differences from examples 1 to 3 are: the superposition of the pulse light and the detection light on the surface of the sample is not realized by a dichroic filter, but the superposition of a light spot is realized by an optical reflector. In contrast to example 1, this embodiment differs from the embodiment in that only the probe light incidence unit, the optical path directing unit and the probe light reflection unit are different, and the other units remain unchanged. Only the differences will be described below.
After the first detection light is emitted, the first detection light is directly reflected by two reflectors (6600,6700) and enters the surface of the sample at a certain angle (15-75 degrees) with the pulse light path, and the light spot on the surface of the sample is coincided with the light spot of the pulse light. The convex lens-6800 is used for focusing the first detection light. The detection light reflected on the surface of the sample is guided to the first convex lens 3500 and the first filter 3600 through the reflector 6900, and is finally received by the first photodetector 3700 with an amplification function.
The light path of the second detection light is similar to that of the first detection light, the second detection light is reflected by the two reflectors (7000,7100) after being emitted, the second detection light and the pulse light path form a certain angle (15 degrees to 75 degrees) and enter and emit towards the surface of the sample, and the light spot on the surface of the sample is coincided with the light spot of the pulse light. It is noted that the incident angles of two different probe lights differ, as shown in fig. 7. The convex lens 7200 serves to focus the second probe light. The detection light reflected on the surface of the sample is guided to the second convex lens 3800 and the second filter 3900 through the reflecting mirror 7300, and is finally received by the first photodetector 4000 with an amplifying function.
The above embodiments are only for illustrating the technical solutions of the present invention, and are not to be construed as limiting the scope of the present invention, and it should be understood by those skilled in the art that any modifications or equivalent substitutions to the technical solutions of the present invention are included in the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. The device for detecting the wide-bandgap semiconductor device comprises a heating optical component, a detection light incidence component, a light path guiding component, a detection reflected light acquisition component and a sample surface monitoring component, and is characterized in that the heating optical component generates pulse heating laser; the detection light incidence assembly comprises a first detection laser and a second detection laser, and generates continuous lasers with different wavelength bands, the first detection laser is used for detecting the heat reflection of the surface of the metal material, and the second detection laser is used for detecting the heat reflection of the surface of the wide bandgap semiconductor; the light path guiding component comprises a first dichroic filter and a second dichroic filter; the dichroic filter is arranged on a light path, the plane of the filter and the incidence direction of the first beam of light form 45 degrees, the incidence angle of the second beam of light and the filter is 45 degrees, the incidence direction of the second beam of light and the incidence direction of the first beam of light form 90 degrees, and the first beam of light and the second beam of light are combined and coaxial after passing through the first dichroic filter to form first combined light; the plane of the second dichroic filter forms an angle of 45 degrees with the direction of the first combined beam light, the incident direction of the third beam light forms an angle of 90 degrees with the incident direction of the first combined beam light, and simultaneously forms an angle of 45 degrees with the plane of the second dichroic filter, all three beams of light are combined and coaxial after passing through the second dichroic filter, and finally, a focusing mirror focuses the beams on the surface of a sample; the three beams of light are pulse heating laser, first detection laser and second detection laser.
2. The apparatus of claim 1, wherein the dichroic filter is one or more of a short-pass dichroic filter or a long-pass dichroic filter.
3. The apparatus according to claim 1 or 2, wherein if the first dichroic filter is short-wavelength pass, the light reaching the filter smaller than the cut-off wavelength in the first detection laser and the pulse laser is totally transmitted, and the light reaching the filter larger than the cut-off wavelength is totally reflected; if the first dichroic filter passes through the long wave, the light which is smaller than the cut-off wavelength in the first detection laser and the pulse laser reaches the filter in a total reflection mode, and the light which is larger than the cut-off wavelength reaches the filter in a full transmission mode.
4. The apparatus according to any one of claims 1 to 2, wherein the wavelengths of the pulse light and the two probe lights are arranged in order of small to large as a, B, C, the first combined light is composed of a and B, or B and C, and if the first combined light is composed of a and B, the cutoff wavelength of the first dichroic filter is selected to be a value between a and B, and the cutoff wavelength of the second dichroic filter is selected to be a value between B and C; if the first combined beam consists of B and C, the cut-off wavelength of the first dichroic filter is selected to be a value between B and C, and the cut-off wavelength of the second dichroic filter is selected to be a value between a and B.
5. The method according to any one of claims 1-2, wherein the wide bandgap is detectedThe device of the semiconductor device is characterized in that the pulse width of the pulse heating laser is dozens of picoseconds to dozens of nanoseconds, the frequency is less than 30kHz, and the photon energy corresponding to the wavelength is higher than the energy gap (forbidden bandwidth) of the wide-forbidden-band semiconductor to be detected; the first detection laser is polarized continuous light with the wavelength ranging from 400nm to 800 nm; the second detection laser is polarized continuous light, and the photon energy corresponding to the wavelength is higher than the energy gap (forbidden bandwidth) of the wide forbidden band semiconductor to be detected; preferably, the absolute value of the difference between the second detection laser wavelength and the pulse heating laser wavelength is at least greater than 10 nm; preferably, the light intensity ratio of the pulse heating laser to the detection laser is greater than 10: 1; preferably, the metal material includes aluminum, copper, platinum, nickel, molybdenum, gold, and SrRuO3And LaNiO3Alloying; preferably, the wide bandgap semiconductor material comprises 4H-silicon carbide, 6H-silicon carbide, zinc oxide, gallium nitride, aluminum nitride, gallium oxide, diamond.
6. The apparatus according to any one of claims 1-2, wherein the probe light incidence assembly comprises a probe laser and a beam splitter, the probe light emitted from the probe laser passes through the beam splitter, and then the probe light is incident on the dichroic filter by the reflector, and the incident angle of the probe light and the filter is 45 ° and the incident angle of the probe light and the filter is 90 ° with respect to the incident direction of the pulsed light; preferably, the beam splitter can be a combination of an 1/2 wave plate, a cubic polarization beam splitter and a 1/4 wave plate, the detection light emitted by the detection laser passes through the 1/2 wave plate, the beam splitter cubic polarization beam splitter and the 1/4 wave plate in sequence, and then the detection light is incident to the dichroic filter by the reflector; further preferably, the detection laser emits polarized continuous laser light, which can be expressed as a vector sum of horizontally polarized light (p-light) and vertically polarized light (s-light); preferably, the 1/2 wave plate has a function of adjusting p light and s light in the passed polarization continuous laser light in a ratio of 0:100 to 100: 0.
7. The device according to claim 6, wherein the detection reflected light collection module and the detection light incidence module share a beam splitter, the detection light reflected light passes through the focusing mirror, the dichroic filter, the reflecting mirror and the beam splitter in sequence, the reflected light is reflected by the rear part of the beam splitter to separate the reflected light path from the incident light path, and the reflected light is detected by a subsequent detection device; preferably, the beam splitter is a combination of an 1/2 wave plate, a cubic polarization beam splitter and a 1/4 wave plate, and reflected light passes through the 1/4 wave plate and the cubic polarization beam splitter and then is totally reflected to realize separation of a reflected light path and an incident light path.
8. The apparatus of claim 7, wherein the detection light reflection assembly comprises a convex lens, a filter, a photodetector; the convex lens is used for focusing the reflected light beam; the filter is used for filtering a small amount of pulse laser reflected at the same time; the photoelectric detector is used for receiving the reflected light signal and converting the reflected light signal into an electric signal; the photoelectric detector can be a photoelectric detector with an amplification function or a balanced amplification detector.
9. The apparatus of claim 7 or 8, wherein the sample surface monitoring assembly comprises a white light source, a beam sampling mirror, a convex lens and a CCD camera.
10. A method for detecting a wide-bandgap semiconductor device, characterized in that the device of any one of claims 1 to 9 is used for detecting, preferably, whether the detected sample is anisotropic is judged, if the detected sample is anisotropic, the spot radius of the pulse laser on the sample surface is controlled to be 20um-60um, and if not, the spot radius is controlled to be larger than 60 um.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040066813A1 (en) * | 2002-09-30 | 2004-04-08 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical pickup using the same |
| JP2009075063A (en) * | 2007-08-29 | 2009-04-09 | Kobe Steel Ltd | Thermophysical property evaluation apparatus and measuring method for thermophysical property evaluation |
| JP2010135769A (en) * | 2008-11-06 | 2010-06-17 | Komatsu Ltd | Extreme ultraviolet light source device and control method for extreme ultraviolet light source device |
| CN102721673A (en) * | 2012-04-25 | 2012-10-10 | 吴周令 | Multi-beam array light-induced reflectivity imaging device and method |
| CN203037569U (en) * | 2012-11-20 | 2013-07-03 | 中国科学院工程热物理研究所 | Optical system for measuring thermophysical parameter of solid |
| CN107478582A (en) * | 2017-07-25 | 2017-12-15 | 中国科学院上海光学精密机械研究所 | The measurement apparatus and measuring method of thermal conductivity of thin film |
| CN111443062A (en) * | 2020-04-26 | 2020-07-24 | 中国科学院西安光学精密机械研究所 | Ultrafast detection device and method for transient refractive index of semiconductor material |
| KR20210048539A (en) * | 2018-08-28 | 2021-05-03 | 유니버시티 오브 버지니아 페이턴트 파운데이션 | Steady-state heat reflectance method and system for measuring thermal conductivity |
-
2021
- 2021-09-18 CN CN202111110437.7A patent/CN113834784A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040066813A1 (en) * | 2002-09-30 | 2004-04-08 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical pickup using the same |
| JP2009075063A (en) * | 2007-08-29 | 2009-04-09 | Kobe Steel Ltd | Thermophysical property evaluation apparatus and measuring method for thermophysical property evaluation |
| JP2010135769A (en) * | 2008-11-06 | 2010-06-17 | Komatsu Ltd | Extreme ultraviolet light source device and control method for extreme ultraviolet light source device |
| CN102721673A (en) * | 2012-04-25 | 2012-10-10 | 吴周令 | Multi-beam array light-induced reflectivity imaging device and method |
| CN203037569U (en) * | 2012-11-20 | 2013-07-03 | 中国科学院工程热物理研究所 | Optical system for measuring thermophysical parameter of solid |
| CN107478582A (en) * | 2017-07-25 | 2017-12-15 | 中国科学院上海光学精密机械研究所 | The measurement apparatus and measuring method of thermal conductivity of thin film |
| KR20210048539A (en) * | 2018-08-28 | 2021-05-03 | 유니버시티 오브 버지니아 페이턴트 파운데이션 | Steady-state heat reflectance method and system for measuring thermal conductivity |
| CN111443062A (en) * | 2020-04-26 | 2020-07-24 | 中国科学院西安光学精密机械研究所 | Ultrafast detection device and method for transient refractive index of semiconductor material |
Non-Patent Citations (1)
| Title |
|---|
| 李庆轩 等: "大功率半导体激光器防反射光损伤技术研究", 光电技术应用, vol. 32, no. 02, 15 April 2017 (2017-04-15), pages 21 - 24 * |
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