CN109855741A - A kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature - Google Patents
A kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature Download PDFInfo
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- CN109855741A CN109855741A CN201910100943.4A CN201910100943A CN109855741A CN 109855741 A CN109855741 A CN 109855741A CN 201910100943 A CN201910100943 A CN 201910100943A CN 109855741 A CN109855741 A CN 109855741A
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Abstract
The invention discloses a kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature, which includes: THz source, one group of (2) parabolic mirror, TTL control signal wire, silicon substrate SOS substrate Terahertz detector, bias DC voltage source, low-noise amplifier and lock-in amplifier.At room temperature, with the method directly detected, terahertz signal detection has been carried out to silicon substrate SOS substrate Terahertz detector.To the reception signal of 310 GHz, bias current 5mA, the voltage responsibility of measuring system is about 3375V/W, and when chopping frequency is 1 kHz or more, the noise voltage of system is 6 nV/ Hz1/2, the NEP of measuring system is about 1.8 × 10‑12 W/Hz1/2.To the reception signal of 648 GHz, bias current 5mA, the voltage responsibility of measuring system is about 1175 V/W, and when chopping frequency is 1 kHz or more, the noise voltage of system is 6 nV/ Hz1/2The NEP of measuring system is about 5.2 × 10‑12 W/Hz1/2.The present invention has the characteristics that bandwidth and high sensitivity, is with a wide range of applications in terms of Terahertz power detection and terahertz imaging.
Description
Technical field
The present invention relates to terahertz signal detection and terahertz imaging field, more particularly to it is a kind of can working and room temperature terahertz
The hereby direct detection system of signal.
Background technique
Terahertz Technology is a very important crossing domain, has its novel and unique property, gives technological innovation, state
People's economic development and national security provide wide prospect.Terahertz detection is particularly important one in Terahertz Technology
Key technology is that Terahertz Technology applies to key link in practical research and production.Due to current terahertz emission source
Power it is generally lower, therefore develop that highly sensitive, the terahertz detection of high s/n ratio is particularly important.Terahertz detection method is very
It is more, terahertz pulse radiation detection and the detection of Terahertz continuous radiation can be divided into from the form difference of terahertz emission, according to
The difference of testing mechanism can be divided into directly detection (noncoherent detection) and heterodyne mixing detection (relevant detection).Directly detection one
As detect broadband signal, have the advantages that easy to operate.Its principle is being examined after high-frequency signal enters wave detector by copped wave
Wave device output end generates a direct current signal, and the amplitude proportional of the signal is in the power of input high-frequency signal.Due to this measurement
It is unable to get the phase information of signal, because of referred to herein as noncoherent detection.In heterodyne mixing, radio frequency and local oscillation signal are input to mixing
Intermediate-freuqncy signal is generated in device, and after low-noise amplifier and filter, intermediate frequency spectrum is shown by spectrum analyzer, it is this
The available very high spectral resolution of method, due to intermediate-freuqncy signal phase be equal to radiofrequency signal phase add one often
Number, therefore the amplitude and phase information of radiofrequency signal can be restored, therefore be referred to as relevant detection.For incoherent receiver,
Detector is usually first equipment in RF front-end circuit, and is directly connected antenna.And for coherent receiver, detection
Device is usually an equipment in circuit in intermediate-frequency circuit, and positioned at the rear of RF front-end circuit, it can be penetrated with frequency mixer handle
Frequency signal transforms to the lower intermediate frequency base band of frequency from terahertz wave band.
Coherent detection technology high sensitivity, and there is very high spectral resolution, it is that current highly sensitive detection is common
Means；But structure is complicated for coherent detection technology, expensive, and the local oscillator of high frequency stability and certain output power is needed to believe
Number source, this has larger difficulty in terahertz wave band, to also make its application range by biggish limitation.Directly detect skill
Art is that measured signal is converted into DC current or voltage signal, because without devices such as local oscillation signal source and intermediate frequency amplifiers
Part, to keep system structure simple, wide dynamic range, convenient for miniaturization, but it can only obtain the amplitude information of signal, therefore this
Kind detection technique is relatively specific for the more pixel image-forming detecting systems of array.
Summary of the invention
In order to realize the high sensitivity detection for terahertz signal at room temperature, prepares highly sensitive terahertz imaging and set
Standby, the purpose of the present invention proposes a kind of direct detection system of highly sensitive Terahertz of room temperature, the terahertz signal detection of the system
High sensitivity, the response time is fast, and system is simple, and convenient test is versatile.
Realizing the specific technical solution of the object of the invention is:
A kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature, which includes: THz source, one group
(2) parabolic mirror, TTL control signal wire, silicon substrate SOS substrate Terahertz detector, bias DC voltage source, low noise
Amplifier and lock-in amplifier, setting the first parabolic mirror in the place 10-20cm in front of the condenser lens of the THz source,
The second parabolic mirror, the first paraboloid are set in the terahertz signal transmission direction of vertical first parabolic mirror reflection
Reflecting mirror and the second parabolic mirror reflection kernel spacing 20-40cm, in the second parabolic mirror reflected terahertz hereby wave side
Silicon substrate SOS substrate Terahertz detector is set to the 10-20cm of the second parabolic mirror of distance；Bias DC voltage source connects
Silicon substrate SOS substrate Terahertz detector is connect, low-noise amplifier connects the output end of silicon substrate SOS substrate Terahertz detector, TTL
Control signal wire connects THz source and lock-in amplifier, and low-noise amplifier output end connects lock-in amplifier, locking phase amplification
Device directly reads output voltage；Wherein: THz source delivery outlet, parabolic mirror center and the inspection of silicon substrate SOS substrate Terahertz
Device is surveyed in sustained height；The silicon substrate SOS substrate Terahertz detector is the substrate using silicon substrate SOS substrate as detector,
Reactive ion etching silicon detects microbridge on substrate, and silicon detection microbridge both ends connect gold electrode.
The substrate top layer silicon of the silicon substrate SOS substrate Terahertz detector is to hinder silicon, resistivity 2.5- in n-type doping
10ohm.cm；Silicon detection microbridge with a thickness of 100nm to 200nm；Lead trend and the detection of the gold film electrode are believed
Number polarization direction it is consistent；Detection effective area is 5um × 320um or 20um × 600um.
The THz source provides detection terahertz signal, and output signal frequency range is 0.1THz-1THz, output letter
Number power at least 0.05mW.
The control signal wire realizes the modulation for terahertz signal, and modulating frequency is arranged in 0.1-20kHz, leads to
It crosses lock-in amplifier and reads output voltage.
The Terahertz condenser lens realizes the parallel output of terahertz signal, and real by one group of parabolic mirror
Existing terahertz signal can be incident in parallel on silicon substrate SOS substrate Terahertz detector.
The noise voltage 3nV/Hz of the low-noise amplifier1/2-4nV/Hz1/2, realize the low noise to detection signal
Amplification, amplification factor are selected as 1000 times.
The lock-in amplifier realizes the locking phase for detecting signal, directly reading output voltage.
The bias DC voltage source provides at least DC offset voltage of 5V and gives silicon substrate SOS substrate Terahertz detector.
The present invention is at room temperature, with the method directly detected, to the silicon substrate SOS substrate terahertz detector of preparation
Terahertz signal detection is carried out.To the reception signal of 310GHz, the voltage responsibility of bias current 5mA, measuring system are about
3375V/W, when chopping frequency is 1kHz or more, the noise voltage of system is 6nV/Hz1/2, the NEP of measuring system is about 1.8 ×
10-12W/Hz1/2.To the reception signal of 648GHz, bias current 5mA, the voltage responsibility of measuring system is about 1175V/W, is cut
When wave frequency rate is 1kHz or more, the noise voltage of system is 6nV/Hz1/2The NEP of measuring system is about 5.2 × 10-12W/Hz1/2。
Beneficial effects of the present invention:
A kind of direct detection system of the highly sensitive Terahertz of room temperature proposed by the present invention, builds terahertz using general detection device
The hereby direct detection system of signal has system building simple, and convenient for integrated, detection sensitivity is high, detects bandwidth, response time
The advantages such as fast, Terahertz power detection and in terms of be with a wide range of applications.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Fig. 2 is detector pictorial diagram of the present invention, and the receiving area of detector is 5um × 320um；
Fig. 3 is the structural schematic diagram of detector of the present invention；
Fig. 4 is detector I-V test curve figure of the present invention, and the receiving area of device is 5um × 320um；
Fig. 5 is detector voltage response test figure of the present invention, and signal modulation frequency 1kHz, the receiving area of device is 5um
×320um；
Fig. 6 is 5um × 320um response device time test figure, rise time 7us, fall time 8us；
Fig. 7 is 20um × 600um response device time test figure, rise time 8us, fall time 8us.
Specific embodiment
In conjunction with following specific embodiments and attached drawing, the present invention is described in further detail.Implement process of the invention,
Condition, experimental method etc. are among the general principles and common general knowledge in the art, this hair in addition to what is specifically mentioned below
It is bright that there are no special restrictions to content.
Present system is built, comprising the following steps:
Test equipment is placed on horizontal firm test platform by the first step, such as Fig. 1, first placement THz source
1, it is exported in THz source 1 and places parabolic mirror 2 in front of horn mouth at 10-20cm, reflected in vertical parabolic mirror 2
Terahertz signal transmission direction on place parabolic mirror 3,3 reflection kernel of parabolic mirror 2 and parabolic mirror
Spacing 20-40cm, in 3 reflected terahertz of parabolic mirror, hereby silicon is placed in wave direction at the about 10-20cm of parabolic mirror 3
Base SOS substrate Terahertz detector 5.In placement process, so that THz source 1 exports horn mouth center, 2 and of parabolic mirror
3 reflection kernel of parabolic mirror and 5 device cell center of silicon substrate SOS substrate Terahertz detector are on sustained height.Pass through
Bias DC voltage source 4 provides 5V bias voltage to detector 5, and the signal detected by 7 Duis of low-noise amplifier carries out low noise
Amplification, connects lock-in amplifier 9 by high-pass filter 8, connects THz source 1 and lock-in amplifier by control signal wire 6
9, voltage output is realized by voltage sensing element 10.
Second step, THz source 1 export horn mouth at, place red laser source, repeatedly adjust THz source center and
The height of the reflection kernel of parabolic mirror 2 and 3 is incident in 5 device cell of detector so that output THz wave is parallel
In the heart.
Silicon substrate SOS substrate Terahertz detector 5 is placed on test substrate by third step.
4th step adjusts terahertz signal source, makes output frequency 310GHz.
5th step provides silicon substrate Terahertz detector 5 to bias voltage 5V by bias voltage source.
6th step, tests the I-V characteristic curve of detector, and setting bias current is -5mA~5mA.
7th step, the bias current that will test device 5 are set as 5mA, are read by lock-in amplifier 9 and voltage sensing element 10
Output voltage under 310GHz radiation out.
8th step adjusts terahertz signal source, makes output frequency 648GHz.
8th step will test 5 bias voltage of device and be set as 5V by bias voltage source 4.
9th step, the bias current that will test device 5 are set as 5mA, are read by lock-in amplifier 9 and voltage sensing element 10
Output voltage under 648GHz radiation out.
Tenth step provides the direct current biasing of 5V to detector 5 by dry cell, with acquisition speed not less than 10Gb/s's
High-speed oscilloscope, the response time of test macro and noise voltage spectrum.
The specification of SOS substrate in silicon substrate Terahertz detector of the invention are as follows:
SOS Wafer THK:440-480um, Dopant:P, TYPE:N type 2.5-10ohm.cm, SOS layer
Orientation:<100>, SOS layer THK:0.54-0.66um.
The silicon detection microbridge of silicon substrate SOS substrate Terahertz detector with a thickness of 100-200nm, detecting effective area is
5um × 320um or 20um × 600um.
Embodiment 1
It is that 5um × 320um device is placed in test substrate as shown in Figure 3 by probe unit area.The biasing of device is set
Electric current is in 5mA, and the noise voltage of system is about 6nV/Hz after tested1/2, the response time of system sees test chart 6, from the knot of test
From the point of view of fruit, the response time of system is about 8 × 10-6S measures its noise equivalent power under the look-in frequency of 310GHz
(NEP) it is better than 1.8 × 10-12W/Hz1/2, the noise equivalent power (NEP) under the look-in frequency of 648GHz is better than 5.2 × 10- 12W/Hz1/2。
Embodiment 2
It is that 20um × 600um device is placed in test substrate as shown in Figure 3 by probe unit area.The biasing of device is set
Electric current is in 5mA, and the noise voltage of system is about 6nV/Hz after tested1/2, the response time of system sees test chart 7, from the knot of test
From the point of view of fruit, the response time of system is about 8 × 10-6S measures its noise equivalent power under the look-in frequency of 310GHz
(NEP) it is better than 4 × 10-12W/Hz1/2, the noise equivalent power (NEP) under the look-in frequency of 648GHz is better than 1 × 10-11W/
Hz1/2。
The present invention is based on mature silicon manufacture and processing technology, and preparation is simple, technology maturation, working and room temperature, and system is visited
Measured frequency wide (0.1-10THz) and response time fast (10-6-10-5S), the excellent (< 10 of noise equivalent power-12W/Hz1/2), it shows
Showing the present invention has apparent advantage in room temperature Terahertz context of detection.
Protection content of the invention is not limited to above embodiments.Under the spirit and scope without departing substantially from invention, this field
Technical staff it is conceivable that variation and advantage be all included in the present invention, and with appended claims be protection model
It encloses.
Claims (8)
1. a kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature, which is characterized in that the system includes: terahertz
Hereby source, one group i.e. 2 parabolic mirror, TTL control signal wire, silicon substrate SOS substrate Terahertz detector, DC offset voltage
Source, low-noise amplifier and lock-in amplifier, setting the first paraboloid in the place 10-20cm in front of the condenser lens of the THz source
The second parabolic mirror is arranged in the terahertz signal transmission direction of vertical first parabolic mirror reflection in reflecting mirror,
First parabolic mirror and the second parabolic mirror reflection kernel spacing 20-40cm are reflected in the second parabolic mirror
Silicon substrate SOS substrate Terahertz detector is set at the 10-20cm of THz wave direction the second parabolic mirror of distance；Direct current is inclined
Voltage source connection silicon substrate SOS substrate Terahertz detector is set, low-noise amplifier connects silicon substrate SOS substrate Terahertz detector
Output end, TTL control signal wire connect THz source and lock-in amplifier, and low-noise amplifier output end connects locking phase amplification
Device, lock-in amplifier directly read output voltage；Wherein: THz source delivery outlet, parabolic mirror center and silicon substrate SOS lining
Bottom Terahertz detector is in sustained height；The silicon substrate SOS substrate Terahertz detector is using silicon substrate SOS substrate as detector
Substrate, reactive ion etching silicon detects microbridge on substrate, and silicon detection microbridge both ends connect gold electrode.
2. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
Top layer silicon is to hinder silicon, resistivity 2.5-10 in n-type doping in the substrate of the silicon substrate SOS substrate Terahertz detector
ohm.cm；Silicon detection microbridge with a thickness of 100nm to 200nm；The lead trend of the gold film electrode and detection signal
Polarization direction it is consistent；Detection effective area is 5um × 320um or 20um × 600um.
3. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
The THz source provides detection terahertz signal, and output signal frequency range is 0.1-1THz, and the power of output signal is extremely
Few 0.05mW.
4. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
The TTL control signal wire realizes the modulation for terahertz signal, and modulating frequency is arranged in 0.1-20kHz, passes through lock
Phase amplifier reads output voltage.
5. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
Terahertz signal realizes that terahertz signal is incident on silicon substrate SOS substrate Terahertz detector in parallel by one group of parabolic mirror
On.
6. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
3 nV/Hz of noise voltage of the low-noise amplifier1/2-4nV/Hz1/2, realize to the low noise amplification of detection signal, put
Big multiple is selected as 1000 times.
7. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
The lock-in amplifier realizes the locking phase for detecting signal, directly reading output voltage.
8. the highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature according to claim 1, which is characterized in that
The bias DC voltage source provides at least DC offset voltage of 5V and gives silicon substrate SOS substrate Terahertz detector.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112564819A (en) * | 2020-12-11 | 2021-03-26 | 浙江大学 | Photoelectric terahertz high-speed communication system with direct detection function |
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| CN104332695A (en) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | Refrigeration-type terahertz/infrared lamination detector |
| CN105445965A (en) * | 2015-12-18 | 2016-03-30 | 成都浩博依科技有限公司 | Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof |
| CN108254071A (en) * | 2018-01-08 | 2018-07-06 | 华东师范大学 | A kind of direct detecting system of highly sensitive Terahertz of room temperature |
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- 2019-01-31 CN CN201910100943.4A patent/CN109855741A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332695A (en) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | Refrigeration-type terahertz/infrared lamination detector |
| CN105445965A (en) * | 2015-12-18 | 2016-03-30 | 成都浩博依科技有限公司 | Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof |
| CN108254071A (en) * | 2018-01-08 | 2018-07-06 | 华东师范大学 | A kind of direct detecting system of highly sensitive Terahertz of room temperature |
Non-Patent Citations (1)
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| CN112564819A (en) * | 2020-12-11 | 2021-03-26 | 浙江大学 | Photoelectric terahertz high-speed communication system with direct detection function |
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Application publication date: 20190607 |