CN102109686B - Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof - Google Patents
Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof Download PDFInfo
- Publication number
- CN102109686B CN102109686B CN2010105290182A CN201010529018A CN102109686B CN 102109686 B CN102109686 B CN 102109686B CN 2010105290182 A CN2010105290182 A CN 2010105290182A CN 201010529018 A CN201010529018 A CN 201010529018A CN 102109686 B CN102109686 B CN 102109686B
- Authority
- CN
- China
- Prior art keywords
- vanadium oxide
- laser diode
- thz wave
- wave
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a terahertz wave photochopper based on a silicon-based vanadium oxide thin film and using method thereof, belonging to the technical field of terahertz chopping. The chopper comprises the silicon-based vanadium oxide thin film, a laser diode, a focusing lens, a driving power of the laser diode, a square wave signal generator and a reference signal output terminal. The chopping process of the chopper comprises the following steps of: putting the silicon-based vanadium oxide thin film in the terahertz beam; radiating the silicon-based vanadium oxide thin film by the laser diode; controlling a faculae area of the radiating region by the focusing lens; controlling the laser square wave pulse output by the laser diode by the square wave signal generator, wherein the output frequency is adjustable between 100 Hz and 3 KHz; the transmission rate of the silicon-based vanadium oxide thin film is periodically changed under the action of the laser square wave signal so as to periodically control on-off of the terahertz wave and reach the purpose of chopping the terahertz wave. The terahertz wave photochopper is stable for chopping, low in cost, small in volume, convenient to integrate and fast in modulation speed.
Description
Technical field
The present invention relates to a kind of terahertz light chopper and method of application, belong to Terahertz wave chopping technology field based on silica-based vanadium oxide film.
Background technology
Chopper is the indispensable part in the phase lock amplifying technology, and chopper is realized the modulation to signal through the break-make of control light signal, combines and can realize Detection of weak with lock-in amplifier.Optical chopper fiber amplifier feature measurement, optical fiber grating sensing, and feeble signal field of measurement such as terahertz time-domain spectroscopy analysis important use is arranged.
In the terahertz time-domain spectroscopy system, most widely used is mechanical chopper.Mechanical chopper is made up of mechanical chopper blade, machinery frame, optocoupler frequency feedback and speed control electronic system four parts.The machinery chopper blade is a metal disk, has the slit of equidistant circumferential arrangement above, and mechanical chopper blade is by the motor driven rotary, thereby periodically controls having or not of light signal.This mechanical chopper has two problems be difficult to solve: (1) because mechanical hook-ups such as chopper blade and motor can't be integrated, so that the volume of mechanical chopper is difficult to be compressed to is very little; (2) speed of mechanical rotation is limited, and general several KHzs are difficult to work under the situation that needs high speed copped wave.
Also have electric light chopper in addition based on the electrooptical modulation crystal, excessive to the THz wave absorption, can not be used for the direct copped wave of direct THz wave, and cost is higher.
The Terahertz chopper of on-mechanical formula is very important for the compactization of terahertz time-domain system.
Summary of the invention
The present invention is intended to propose a kind of light-operated chopper of the terahertz light spectra system based on silica-based vanadium oxide film, and this chopper is simple in structure, is convenient to other electron devices integratedly, and volume is little, and copped wave speed is fast.
The present invention realizes through following technological means.A kind of THz wave optical chopper based on silica-based vanadium oxide film; It is characterized in that: this chopper shines the laser diode 4 of silica-based vanadium oxide film by the silica-based vanadium oxide film 2 that is arranged in the Terahertz light path, and a condenser lens 3 is set between diode and the silica-based vanadium oxide film; The driving power 5 of laser diode; Provide the square wave signal generator 6 of driving power switching signal to constitute, signal generator 6 also is provided with reference signal lead-out terminal 7, and this terminal links to each other with lock-in amplifier.
THz wave is carried out the method for copped wave with the chopper of said structure; It is characterized in that comprising following process: the face of silica-based vanadium oxide film 2 is placed perpendicular to terahertz wave beam; Light that laser diode 4 sends and THz wave shine it at silica-based vanadium oxide film 2 homonymies; The incident direction of laser diode 4 and face normal direction angle are 30 °-60 °, and the facula area of irradiated region is by condenser lens 3 controls.Laser diode 4 passes through the driving power 5 of laser diode under square wave signal generator 6 controls, and output frequency is the laser pulse square wave of 100Hz-3KHz, when laser diode 4 is in luminance; Silica-based vanadium oxide film 2 is under the irradiation of laser; Semiconductor-metal phase change process takes place, and its conductivity can increase severely, thereby the loss of the THz wave that penetrates is strengthened greatly; The THz wave transmitance reduces, and the transmission of THz wave is equivalent to the state of being blocked; When laser diode 4 during in luminance not; Silica-based vanadium oxide film 2 is in the semiconductor state, and this moment, the transmitance of THz wave was higher, and the transmission of THz wave is equivalent to opening state; Thereby the periodic control that realizes the THz wave break-make reaches the purpose to THz wave copped wave.
Advantage of the present invention, compare with the standard machinery chopper and to be: (1) light chopping way is more stable, the vibration effect that does not have mechanical copped wave to bring; (2) the control light source of chopper is the commercial lasers diode of wavelength 808nm, and is less demanding to pattern, and output has hundred milliwatt magnitudes to get final product, and is with low cost; (3) silica-based vanadium oxide film and laser diode can be integrated with other electron devices easily, are convenient to the miniaturization of Terahertz system; (4) modulating speed is fast, can reach 30KHz, can be used in the occasion that needs high speed copped wave.
Description of drawings
Fig. 1 is the structured flowchart of the THz wave optical chopper based on silica-based vanadium oxide film of the present invention.
Among the figure: 1-shadow shield, the silica-based vanadium oxide film of 2-, 3-lens, 4-laser diode, 5-Laser Driven power supply, 6-square-wave signal generating means, 7-reference signal lead-out terminal.
When Fig. 2 carries out 2KHz copped wave for adopting optical chopper of the present invention to THz wave, the terahertz pulse oscillogram that records.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
Embodiment based on the terahertz light chopper of silica-based vanadium oxide film is following:
At first prepare silica-based vanadium oxide film.Select single-sided polishing, the crystal orientation does<110>The high resistant silicon chip of direction, resistivity p＞1000 Ω/cm
2, 600 microns of thickness.The formation of vanadium oxide film is than Ar: O at argon oxygen
2Magnetron sputtering formed in 2 hours under=48: 0.8 (sccm), pressure 2Pa, the room temperature environment, and film thickness is 620nm.
The silica-based vanadium oxide film 2 for preparing is placed on 5mm place before the Terahertz focus of terahertz time-domain spectroscopy system.The laser that laser diode 4 sends is that the lens 3 of 50cm shine silica-based vanadium oxide film 2 surfaces through focal length; Laser diode output direction of light and silica-based vanadium oxide film 2 normal angles are 45 °; On the laser-bounce light path, block, avoid human eye is damaged with 1 pair of laser light reflected of black shadow shield.Be the condenser lens 3 of 50mm through focusing, make the laser spot diameter 6mm that shines silica-based vanadium oxide film 2 surfaces, cover the Terahertz hot spot fully.
The square-wave signal that square wave signal generator 6 sends is input in the lock-in amplifier signal as a reference through reference signal lead-out terminal 7, and the signal of Terahertz detection system output just can be detected by lock-in amplifier.Fig. 2 is the terahertz pulse signal waveforms that experiment records.
Claims (2)
1. THz wave optical chopper based on silica-based vanadium oxide film, it is characterized in that: this chopper shines the laser diode (4) of silica-based vanadium oxide film (2) by the silica-based vanadium oxide film (2) that is arranged in the Terahertz light path; A condenser lens (3) that is provided with between laser diode (4) and the silica-based vanadium oxide film (2); The driving power (5) of laser diode (4) provides the square wave signal generator (6) of driving power switching signal to constitute, and signal generator (6) also is provided with reference signal lead-out terminal (7); This terminal links to each other with lock-in amplifier; When laser diode (4) when being in luminance, semiconductor-metal phase change process takes place in silica-based vanadium oxide film (2) under the irradiation of laser; Its conductivity can increase severely; Thereby the loss to the THz wave that penetrates strengthens greatly, and the THz wave transmitance reduces, and the transmission of THz wave is equivalent to the state of being blocked; When laser diode (4) is in not luminance; Silica-based vanadium oxide film (2) is in the semiconductor state; This moment, the transmitance of THz wave was higher; The transmission of THz wave is equivalent to opening state, thereby the periodic control that realizes the THz wave break-make reaches the purpose to THz wave copped wave.
2. method of THz wave being carried out copped wave with the described chopper of claim 1; It is characterized in that comprising following process: the face of silica-based vanadium oxide film (2) is placed perpendicular to terahertz wave beam, and light that laser diode (4) sends and THz wave shine it at silica-based vanadium oxide film (2) homonymy, and the incident direction of laser diode (4) and face normal direction angle are 30 °-60 °; The facula area of irradiated region is controlled by condenser lens (3); The driving power (5) of laser diode (4) through laser diode is under square wave signal generator (6) control, and output frequency is the laser pulse square wave of 100Hz-3KHz, when laser diode (4) when being in luminance; Silica-based vanadium oxide film (2) is under the irradiation of laser; Semiconductor-metal phase change process takes place, and its conductivity can increase severely, thereby the loss of the THz wave that penetrates is strengthened greatly; The THz wave transmitance reduces, and the transmission of THz wave is equivalent to the state of being blocked; When laser diode (4) is in not luminance; Silica-based vanadium oxide film (2) is in the semiconductor state; This moment, the transmitance of THz wave was higher; The transmission of THz wave is equivalent to opening state, thereby the periodic control that realizes the THz wave break-make reaches the purpose to THz wave copped wave.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105290182A CN102109686B (en) | 2010-11-03 | 2010-11-03 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105290182A CN102109686B (en) | 2010-11-03 | 2010-11-03 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102109686A CN102109686A (en) | 2011-06-29 |
| CN102109686B true CN102109686B (en) | 2012-07-11 |
Family
ID=44173889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105290182A Expired - Fee Related CN102109686B (en) | 2010-11-03 | 2010-11-03 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102109686B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460050A (en) * | 2014-12-17 | 2015-03-25 | 中国电子科技集团公司第三十八研究所 | Optically-controlled adjustable THz-wave attenuator |
| CN104407453A (en) * | 2014-12-17 | 2015-03-11 | 中国电子科技集团公司第三十八研究所 | Light-control type adjustable terahertz wave attenuator and application method thereof |
| CN111123422A (en) * | 2020-01-07 | 2020-05-08 | 南京大学 | Novel terahertz dynamic adjustable grating and preparation method thereof |
| CN114459602A (en) * | 2020-11-09 | 2022-05-10 | 北京航天计量测试技术研究所 | Chopping device, chopping method and optical fiber coupling type terahertz time-domain system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283113A (en) * | 1979-03-23 | 1981-08-11 | Eden Dayton D | Optical modulation with vanadium oxide thin films |
| CN101125737A (en) * | 2007-07-16 | 2008-02-20 | 中国科学院广州能源研究所 | Intelligent heat-resisting thin film and its preparing process |
| CN101551568A (en) * | 2009-05-18 | 2009-10-07 | 中国计量学院 | Microstrip resonance structure Terahertz wave modulation apparatus and method thereof |
-
2010
- 2010-11-03 CN CN2010105290182A patent/CN102109686B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283113A (en) * | 1979-03-23 | 1981-08-11 | Eden Dayton D | Optical modulation with vanadium oxide thin films |
| CN101125737A (en) * | 2007-07-16 | 2008-02-20 | 中国科学院广州能源研究所 | Intelligent heat-resisting thin film and its preparing process |
| CN101551568A (en) * | 2009-05-18 | 2009-10-07 | 中国计量学院 | Microstrip resonance structure Terahertz wave modulation apparatus and method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Peter Uhd Jepsen et al.Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy.《PHYSICAL REVIEW B》.2006,第74卷(第20期),第205103-1到205103-9页. * |
| S. Paradis et al.Vanadium oxide films for optical modulation applications.《Proc. of SPIE》.2006,第6343卷第63433U-1到63433U-7页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102109686A (en) | 2011-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102109686B (en) | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof | |
| CN106711745B (en) | Infrared parametric oscillator in broad tuning, narrow linewidth nanosecond pulse double resonance | |
| JP6553027B2 (en) | Surgical laser therapy temperature monitor | |
| CN103779776B (en) | Seed injection single-frequency pulse laser based on tunable cavity length of electro-optical crystal | |
| TW201241506A (en) | Method of adjusting electro-optic modulator in laser device, and laser device | |
| CN104779514A (en) | OPO (optical parametric oscillator) realizing broad tuning and tuning device | |
| CN105136431A (en) | Measurement system for optical element transmittance and reflectance based on acousto-optic modulation | |
| CN104617474A (en) | Resonant cavity for pulse and line selection output of airflow hydrogen fluoride laser | |
| CN110112649A (en) | The method and device of inexpensive automatic Calibration Distributed Feedback Laser wavelength | |
| CN202230201U (en) | Closed loop laser scanning range-finding device | |
| CN204517132U (en) | The optical parametric oscillator of broad tuning and tuner | |
| CN102778800A (en) | Method and device for generating light pulse by direct current light | |
| CN105938974A (en) | Laser variable pulse width protection system | |
| US8179933B1 (en) | Systems and methods for visible light source evaluation | |
| CN113300208B (en) | Laser output device and laser device | |
| CN217036311U (en) | Repetition frequency adjustable optical fiber laser with stable single pulse energy | |
| CN211708366U (en) | Semiconductor laser power supply, power-adjustable laser and welding device | |
| CN205790923U (en) | A kind of high power nanosecond, Picopulse optical fiber laser system | |
| CN208209236U (en) | A kind of ultrafast laser generator | |
| CN116794859B (en) | System and method for regulating terahertz wave intensity by multi-beam laser ionization air | |
| CN214411753U (en) | Ultra-narrow band 1064nm atomic filter | |
| CN108683070A (en) | A kind of ultrafast laser generator | |
| JPS6259283B2 (en) | ||
| CN203260889U (en) | Pulse constant current driver | |
| CN111342333B (en) | Optical fiber mode locking device based on polymer and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Yanfeng Inventor after: Xing Qirong Inventor after: Wang Changlei Inventor after: Tian Zhen Inventor after: Chai Lu Inventor after: Hu Ming Inventor after: Chen Tao Inventor before: Xing Qirong Inventor before: Wang Changlei Inventor before: Tian Zhen Inventor before: Li Yanfeng Inventor before: Chai Lu Inventor before: Hu Ming Inventor before: Chen Tao |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XING QIRONG WANG CHANGLEI TIAN ZHEN LI YANFENG CHAI LU HU MING CHEN TAO TO: LI YANFENG XING QIRONG WANG CHANGLEI TIAN ZHEN CHAI LU HU MING CHEN TAO |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20121103 |