CN103178351B - A kind of THz wave Meta Materials manipulator of frequency-adjustable - Google Patents
A kind of THz wave Meta Materials manipulator of frequency-adjustable Download PDFInfo
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- CN103178351B CN103178351B CN201310062527.2A CN201310062527A CN103178351B CN 103178351 B CN103178351 B CN 103178351B CN 201310062527 A CN201310062527 A CN 201310062527A CN 103178351 B CN103178351 B CN 103178351B
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Abstract
The invention discloses the THz wave Meta Materials manipulator of a kind of frequency-adjustable, including the unit component of periodic arrangement, each unit component includes substrate, the function material layer being positioned on substrate and the metal resonant element being positioned in function material layer；When function material layer becomes metal phase mutually from insulation, the electrical conductivity of function material layer increases the area of the middle opening electric capacity making metal resonant element the most again and increases, and the resonant frequency of metal resonant element diminishes along with the increase of electric capacity and achieves the frequency tuning to unit component.The present invention uses on terahertz wave band low transmission loss substrate the metal openings resonant element of fabrication cycle arrangement, utilizes the conductivity variations before and after metal-insulator phase-change material phase transformation to change the area of resonant element opening electric capacity, achieve the THz wave Meta Materials manipulator that resonant frequency can tune, reach, at terahertz wave band, the electromagnetic transmission characteristic at a certain frequency is carried out initiative control, it is thus achieved that big on-off ratio or the high modulation degree of depth.
Description
Technical field
The invention belongs to electromagnetic functional material field, more particularly, to the terahertz of a kind of frequency-adjustable
Hereby ripple Meta Materials manipulator.
Background technology
Terahertz (Terahertz, THz) ripple be frequency between 0.1～10THz(wavelength be 3000～30 μm)
Electromagnetic wave, be positioned at electronics category and be in the electronics specific position to photonic propulsion transition, have very
The most superior characteristic, in national defense and military, satellite communication, the aspect such as medical diagnosis shows wide
Application potential.
Metal-insulator phase transformation (Metal Insulator Transition, MIT) material has field excitation outside
Under the conditions of, the characteristic that resistivity of material, crystal structure change.Lead in photoswitch, optical storage etc.
Territory has studies widely and applies.
Meta Materials (Metamaterials, MMs) refers to a made composite construction of class, has
Electromagnetic property not available for natural material.By there being purpose to arrange unit component structure, it is achieved to MMs
Effective dielectric constant and the change of equivalent permeability.Calendar year 2001 Smith et al. is by metal resonance list
Unit's periodic arrangement achieves the double negative Meta Materials of microwave regime, the most various types of metal resonance arrays
Device is used for realizing single negative or double negative Meta Materials, and this structure is introduced Terahertz field by people subsequently,
Occur in that a lot of terahertz wave band Meta Materials based on metallic pattern array device.
But, existing terahertz wave modulator carries out amplitude modulation(PAM) or phase for natural frequency mostly
Position modulation, frequency-adjustable terahertz wave modulator few in number uses quasiconductor carrier concentration
Control to realize frequency tuning, but owing to material limits, the peak amplitude after modulation diminishes or modulates deep
Spend the best.Also some device is micro mechanical structure or uses liquid crystal material, causes device lifetime and stablizes
Property is affected.This greatly limits the development of terahertz wave modulator.
Summary of the invention
For the defect of prior art, it is an object of the invention to provide the Terahertz of a kind of frequency-adjustable
Ripple Meta Materials manipulator, it is intended to solving prior art can not be to the resonance of THz wave Meta Materials manipulator
The problem that frequency is modulated or modulation depth is inadequate.
For achieving the above object, the invention provides the THz wave Meta Materials modulation of a kind of frequency-adjustable
Device, including the unit component of periodic arrangement, each unit component includes substrate, is positioned on substrate
Function material layer and the metal resonant element being positioned in described function material layer；When described functional material
Layer becomes metal phase mutually from insulation, and the electrical conductivity of described function material layer increases the most again and makes metal
The area of the middle opening electric capacity of resonant element increases, and the resonant frequency of metal resonant element is along with electric capacity
Increase and diminish and achieve the frequency tuning to unit component.
Further, the material of described function material layer is oxide or the transition metal oxide of vanadium.
Further, the material of described function material layer is vanadium dioxide.
Further, described metal resonant element is U-shaped split ring resonator or field coupling resonator.
Further, described substrate is sapphire, quartz or silicon materials, and thickness is 200-450 μm.
Further, described vanadium dioxide film thickness is 0.05-1 μm.
Further, the thickness of described metal resonant element is 0.15-1 μm.
Further, described unit component is operated in terahertz wave band, and described unit component size is little
In equal to 1/10th of operation wavelength.
Further, described unit component a size of 3-300 μm.
The present invention uses the metal openings of fabrication cycle arrangement on terahertz wave band low transmission loss substrate
Resonant element, the conductivity variations before and after MIT phase-change material phase transformation is utilized to change resonant element opening electricity
The area held, it is achieved that the THz wave Meta Materials manipulator that resonant frequency can tune, has reached
Terahertz wave band carries out initiative control to the electromagnetic transmission characteristic at a certain frequency, it is thus achieved that big switch
Ratio or the high modulation degree of depth.
Accompanying drawing explanation
Fig. 1 is the equivalence of the THz wave Meta Materials manipulator of the frequency-adjustable that the embodiment of the present invention provides
Circuit diagram；
Fig. 2 is the unit of the THz wave Meta Materials manipulator of the frequency-adjustable that the embodiment of the present invention provides
Device is the schematic diagram of U-SRRs structure；
Fig. 3 is the analog result of the transmission coefficient of the U-SRRs unit component that the embodiment of the present invention provides
Figure；
Fig. 4 is the unit of the THz wave Meta Materials manipulator of the frequency-adjustable that the embodiment of the present invention provides
Device is the schematic diagram of ELC structure；
Fig. 5 is the analog result figure of the transmission coefficient of the ELC unit component that the embodiment of the present invention provides.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing
And embodiment, the present invention is further elaborated.Should be appreciated that described herein specifically
Embodiment only in order to explain the present invention, is not intended to limit the present invention.
The THz wave of the resonance absorbing peak frequency-tunable embodiments providing a kind of active surpasses
Material manipulator, it utilizes MIT phase-change material VO2Occur MIT phase transformation to MMs outside under field excitation
The resonance absorbing peak position of middle metal resonant element is modulated, and passes the THz wave at absworption peak
Defeated characteristic is modulated.This device has the advantages such as all solid state, mechanical structure, reversible regulation and control,
The fields such as the following switch in Terahertz space optical communication device, wave filter, encoder have potential
Using value.
The THz wave Meta Materials manipulator of the frequency-adjustable that the embodiment of the present invention provides includes periodic arrangement
Unit component, each unit component includes substrate, the function material layer being positioned on substrate and position
Metal resonant element in function material layer；The electrical conductivity of function material layer becomes metal mutually from insulation
Xiang Hou, the area of the middle opening electric capacity of metal resonant element increases, the resonance frequency of metal resonant element
Rate diminishes along with the increase of electric capacity and achieves the frequency tuning to unit component.
In embodiments of the present invention, the material of function material layer can be 3d transition metal oxide, example
Oxide etc. such as vanadium.
As 3d transition metal oxide, VO2There is generation MIT phase transformation under field excitation outside, from I
After being turned into M phase mutually, its electrical conductivity can increase 3～5 orders of magnitude, shows good electric conductivity.
According to this character, VO2At necks such as Uncooled infrared detection, light storage device, temperature-sensitive infrared switches
The application in territory obtains greater advance.
In embodiments of the present invention, metal resonant element can be U-shaped split ring resonator (U-shapes
Split Ring Resonators, U-SRRs), it is also possible to for field coupling resonator (Electric-LC
Resonator, ELC).The thickness of metal resonant element is 0.15-1 μm.The base of this metal resonant element
Present principles is all to form electric capacity at opening part, produces LC humorous under the outer field excitation of electromagnetic wave of vertical incidence
Shake, form resonance absorbing peak.
In embodiments of the present invention, unit component is operated in terahertz wave band, described unit component size
Less than or equal to operation wavelength 1/10th.
Fig. 1 shows the THz wave Meta Materials manipulator of the frequency-adjustable that the embodiment of the present invention provides
Equivalent circuit；Metal resonant element middle opening can be as dotted box portion in electric capacity C(figure), gold
Belong to arm section to form LC loop produce LC resonance, VO as inductance L2Phase transformation whether represent
Opening (ON) and closing (OFF) of switch.Work as VO2When being in insulation phase (I phase), equivalent circuit
Figure breaker in middle disconnects (OFF), only exists electric capacity C1 in circuit.Work as VO2Metal phase (M is become from I phase
Phase) after, be equivalent to increase the area of metal ELC middle opening electric capacity C, equivalent circuit diagram breaker in middle
Guan Bi (ON), total capacitance C are the in parallel of I phase time electric capacity C1 with C2；Due to M phase VO2Electricity
Conductance is less than conductivity metal, as loss so introducing equivalent resistance R.
THz wave Meta Materials for the frequency-adjustable that the further description embodiment of the present invention provides
Manipulator, the material of function material layer is as a example by VO2, and substrate is with sapphire as substrate, and thickness is
340-380μm；The heterogenous junction epitaxy VO2 film thickness of periodic arrangement is 150nm；Metal resonance list
Unit's thickness is 200nm, as a example by the material of employing is metallic aluminium Al and to combine detailed description as follows:
Dynamic frequency adjustable THz wave Meta Materials manipulator includes at the bottom of back lining many with periodic arrangement
Individual device cell, each of which unit component includes the VO that fine process produces on substrate2
With metal thin-film pattern.Substrate is the material of the terahertz wave band low transmission losses such as sapphire, quartz, silicon
Material, thickness is 200-450 μm；VO2Film thickness is 0.05-1 μm；Metal thickness is 0.15-1 μm.
Metallic pattern can be the structure that U-SRRs, ELC device etc. can produce LC resonance.The device cycle:
Wide Lx, high Ly；Unit component: VO2The live width of electric capacity is d, a length of t, electric capacity two-plate spacing
For g；The a width of w of metallic pattern unit wires, wide Ax, high Ay, metallic pattern split shed as electric capacity C,
Openings of sizes is also g.
(1) when metal resonant element is U-shaped split ring resonator, as in figure 2 it is shown, the device cycle:
Wide Lx, high Ly；Unit component: VO2The live width of electric capacity is d, a length of t, electric capacity two-plate spacing
For g；The a width of w of metallic pattern unit wires, wide Ax, high Ay, metallic pattern split shed as electric capacity C,
Openings of sizes is g.Device is operated in terahertz wave band, and unit component size should be less than equal to operation wavelength
1/10th, so unit component size range should be in 3-300 μm.
Heterogenous junction epitaxy structure of VO on sapphire2Electrical conductivity after I phase becomes M phase, there are 5 numbers
The change of magnitude so that the VO of M phase2Show good electric conductivity.Place it in metal resonance list
The opening part of unit, as capacitor plate, works as VO2It is in I phase time, there is the lowest electrical conductivity, at gold
Belonging to resonant element opening part inoperative, opening part capacitor plate width is the line of metal resonant element
Wide w；Work as VO2It is in M phase time, there is the highest electrical conductivity, be equivalent to add metal resonance list
The width of unit's opening part capacitor plate.According to formula, LC resonant frequencyAnd electric capacity
C=4 π ε S/d, wherein S is capacitor plate area；LC resonant frequency diminishes along with the increase of electric capacity C,
Achieve the frequency tuning to device.
Taking each several part device parameters is Lx=Ly=28μm；Ax=Ay=20μm、w=3μm、g=3μm；
d=3μm、t=13μm。
According to above-mentioned parameter, the THz wave Meta Materials manipulator of frequency-adjustable is simulated through CST MWS
Simulation software carries out structure and performance simulation, obtains transmission coefficient electromagnetic transmission as shown in Figure 3 special
Property.It is seen in the figure that: work as VO2Being in I phase time, the LC resonance absorbing peak of manipulator is at 1.032THz
At frequency, transmission coefficient is 0.0849；Work as VO2After becoming M phase, the LC resonance absorbing of manipulator
Peak creates the red shift of 0.24THz, becomes 0.792THz, and transmission coefficient is 0.3034；In addition when
VO2After I phase becomes M phase, the on-off ratio at 1.032THz frequency has reached 20.68dB, adjusts
The degree of depth processed has reached 81.13%.
(2) when metal resonant element is field coupling resonator, as shown in Figure 4, the device cycle:
Wide Lx, high Ly；Unit component: VO2The live width of electric capacity is d, a length of t, electric capacity two-plate spacing
For g；The a width of w of metallic pattern unit wires, wide Ax, high Ay, metallic pattern split shed as electric capacity C,
Openings of sizes is g.Device is operated in terahertz wave band, and unit component size should be less than equal to operation wavelength
1/10th, so unit component size range should be in 3-300 μm.
Operation principle ibid, does not repeats them here.
Taking each several part device parameters is Lx=60μm、Ly=35μm；Ax=48μm、Ay=24μm、
w=4μm、g=3μm；d=3μm、t=20μm.
According to above-mentioned parameter, the THz wave Meta Materials manipulator of frequency-adjustable is simulated through CST MWS
Simulation software carries out structure and performance simulation, obtains transmission coefficient electromagnetic transmission as shown in Figure 5 special
Property.It is seen in the figure that: work as VO2Being in I phase time, the LC resonance absorbing peak of manipulator is at 1.032THz
At frequency, transmission coefficient is 0.0656；Work as VO2After becoming M phase, the LC resonance absorbing of manipulator
Peak creates the red shift of 0.504THz, becomes 0.798THz, and transmission coefficient is 0.2386；In addition when
VO2After I phase becomes M phase, the on-off ratio at 1.032THz frequency has reached 21.4dB, adjusts
The degree of depth processed has reached 85.1%.
THz wave Meta Materials for the frequency-adjustable that the further description embodiment of the present invention provides
Manipulator, now describes its technological process in detail as follows:
(1) existing various depositing operation epitaxial growth VO is used on a sapphire substrate2Thin film；
(2) use semiconducter process to VO2Thin film carries out microfabrication, makes VO2Capacitance pole
Plate figure；
(3) continue making the VO of figure2Metal resonant element figure is made on Membranous Foundations.
Wherein it is possible to use the such as depositing operation such as ion beam sputtering or magnetron sputtering；Can use
Semiconducter process includes photo etched mask, etching.Lift-off lift-off technology can be used to make metal
Resonant element figure.
The present invention utilizes semiconductor fine processing technique to be prepared, and leads in following Terahertz spatial light
In letter device, the such as integrated functionality devices field such as photoswitch, wave filter, encoder has potential answering
By value.
As it will be easily appreciated by one skilled in the art that and the foregoing is only presently preferred embodiments of the present invention,
Not in order to limit the present invention, all made within the spirit and principles in the present invention any amendment, etc.
With replacement and improvement etc., should be included within the scope of the present invention.
Claims (7)
1. a THz wave Meta Materials manipulator for frequency-adjustable, including the unit component of periodic arrangement,
It is characterized in that, each unit component includes substrate, the function material layer being positioned on substrate and position
Metal resonant element in described function material layer；
Described unit component is operated in terahertz wave band；
Described function material layer is vanadium dioxide film, and described vanadium dioxide film is carried out micro-nano technology
Being etched into 2 vanadium dioxide strips, described vanadium dioxide film is placed on described metal resonant element
Opening part as capacitor plate, when described vanadium dioxide film is in insulation phase time, and vanadium dioxide is thin
Film has the lowest electrical conductivity, inoperative at the opening part of described metal resonant element；When described two
Vanadium oxide film is in metal phase time, and vanadium dioxide film has the highest electrical conductivity, is equivalent to increase
The width of the opening part capacitor plate of described metal resonant element；Described function material layer is from insulation phase
Become metal mutually during, described in the electrical conductivity of described vanadium dioxide film increases the most again and makes
The area of the middle opening electric capacity of metal resonant element increases, the resonant frequency of described metal resonant element
Diminish along with the increase of electric capacity and achieve the frequency tuning to unit component.
2. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described gold
Belonging to resonant element is U-shaped split ring resonator or field coupling resonator.
3. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described lining
The end is sapphire, quartz or silicon materials, and thickness is 200-450 μm.
4. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described two
Vanadium oxide film thickness is 0.05-1 μm.
5. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described gold
The thickness belonging to resonant element is 0.15-1 μm.
6. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described list
Component size is less than or equal to 1/10th of operation wavelength.
7. THz wave Meta Materials manipulator as claimed in claim 1, it is characterised in that described list
Component size is 3-300 μm.
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