CN104465342B - Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method - Google Patents
Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000011068 loading method Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- -1 High Resistivity Si Inorganic materials 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 16
- 238000004891 communication Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 8
- 230000005533 two-dimensional electron gas Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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Abstract
Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method, belong to function solenoid device arts, and the present invention includes Semiconductor substrate, epitaxial layer, positive voltage loading electrode, modulating unit array, negative voltage loading electrode；Epitaxial layer is arranged in Semiconductor substrate, and modulating unit array, positive voltage load electrode and negative voltage loads electrode and is arranged on epitaxial layer；Described modulating unit array includes M × N number of modulating unit, wherein, M>3, N>3；Each modulating unit includes resonant element and HEMT, and HEMT source electrode and drain electrode are connected with the capacitance sheet in resonant element structure.The present invention can carry out break-make control to the THz wave of two frequency bins simultaneously.Can achieve the fast amplitude modulation to THz wave.
Description
Technical field
The invention belongs to function solenoid device arts, particularly to terahertz wave band quick dynamic multifunctional device.
Background technology
Terahertz（Terahertz,THz）Ripple is one kind urgently electromagnet wave spectrum leaved for development, be often referred to frequency between
Electromagnetic wave in the range of 0.1THz～10THz.This frequency range is located between millimeter wave and infrared, light, has many uniquenesses
Electromagnetic property.Thus so that it is supervised in physics, chemistry, electronic information, life sciences, material science, astronomy, air and environment
Survey, national security and anti-terrorism, communicate and the field such as radar has extremely important potential value.
Terahertz radio communication as one of the most important application direction in Terahertz field has been now subjected to countries in the world
Pay attention to.Compared to conventional communication mode such as microwave radio commu, wireless light communications, it is unique that Terahertz wireless communication system has it
Advantage.For example compared to microwave radio commu, Terahertz wireless communication system can provide bigger bandwidth, higher transmission speed
Degree, additionally, the size of antenna will be substantially reduced, is suitable for intersatellite communication；Terahertz wireless communication system can provide multichannel
Data transfer, its sphere of action is more than sighting distance infrared transmission；With respect to wireless light communication, the loss of wireless light communication derives from
The scattering of cloud, rain, dust etc. and absorption, frequency is higher, and scattering is stronger, and compared to light wave, the KPT Scatter of THz wave will
Much smaller, therefore Terahertz communication can be used as the back-up system of optical communication link, still keeps low coverage under dense smoke, Sand Dust Environment
From broadband connections.Terahertz wireless communication technology is constantly subjected to the great attention of Western power, for example inter-satellite interstellar communication, short
Journey atmospheric communication, short distance terrestrial wireless LAN etc..
Have benefited from developing rapidly of THz source and reception system, as the Terahertz manipulator of communications system core device
Become the emphasis in current Terahertz Technology field.Compared to conventional modulated device, the processing technology of terahertz wave modulator requires
Micron even nanometer scale, traditional mechanical processing toolses are difficult to be utilized effectively.Therefore only pass through in microelectronic technique
The means such as photoetching producing the new device that can be used for terahertz wave band.In recent years, in worlds such as Nature/Science
The article of many THz wave external modulators published successively by the top publication of natural science, and its content includes being based on mixes silicon
Base, GaAs base, phase-change material base and Graphene etc. and artificial electromagnetic medium（Metamaterials）Combine, using outer
The energisation mode of degree of heating, illumination, electric field etc. is realizing Terahertz wave modulation.Design a kind of efficient, practical as can be seen here
New Terahertz manipulator become one of the important directions in current Terahertz field.
Controlled Crystal pipe is the core of current microelectronic industry.With the continuous progress of semiconductor technology, there is high electronics
The transistor of mobility（HEMT）Show the performance of brilliance.HEMT is that one kind is present in modulation by control and mixes hetero-junctions
In two-dimensional electron gas（2-DEG）Come the novel field effect transistor to be operated.HEMT not only has wide gap, but also
There is the features such as thermal conductivity is big, electron saturation velocities are high, breakdown field is powerful and heat stability is good, be progressively applied to Terahertz
The fields such as detector, amplifier, cymoscope, frequency mixer.MATERIALS ' DYNAMIC response characteristic with HEMT combines artificial array structure
Electromagnetic property, exploitation THz wave regulation and control device will there is important science and application prospect.
Artificial electromagnetic medium（Metamaterials）Refer to realize externally powering up by artificial design EMR electromagnetic resonance unit
Magnetic field control novel artificial cycle electromagnetic array structure, its can be divided mainly into electric field response, magnetic responsiveness and the two with
When the structure that responds.The Metamaterials cellular construction of wherein electric field response is simple and has forceful electric power magnetic resonance, therefore too
Hertz wave band has wider application.And being combined the resonance structure unit of electric field response with HEMT is to can achieve in the world at present
One of effective technical way of Terahertz fast modulator.
Content of the invention
The technical problem to be solved be to provide a kind of to THz wave electric field component response
Etamaterial resonance array structure, and combine with HEMT and define automatically controlled THz wave blue shift manipulator, this manipulator can
Break-make control is carried out to the THz wave of two frequency bins simultaneously.Can achieve the fast amplitude modulation to THz wave.
The present invention solves described technical problem and employed technical scheme comprise that, the Terahertz blue shift modulation based on Controlled Crystal pipe
Device is it is characterised in that include Semiconductor substrate, epitaxial layer, positive voltage loading electrode, modulating unit array, negative voltage loading electricity
Pole；
Epitaxial layer is arranged in Semiconductor substrate, and modulating unit array, positive voltage load electrode and negative voltage loads electrode
It is arranged on epitaxial layer；
Described modulating unit array includes M × N number of modulating unit, wherein, M>3, N>3；
Each modulating unit includes resonant element and HEMT, HEMT source electrode and
Drain electrode is connected with the capacitance sheet in resonant element structure.
Described resonant element includes resonant ring and the first resonator being arranged within resonant ring, second resonator of rectangle
With the 3rd resonator；
First resonator is the metallic rod of middle opening, and it is perpendicular to the widthwise edge of resonant ring and horizontal with resonant ring
While being connected to the midpoint of widthwise edge；
Second resonator and the 3rd resonator are by the short bonding jumper of two horizontally sets and two longitudinally disposed metals
Bar is constituted, and symmetrical above and below, and two short bonding jumpers are the capacitance sheet constituting electric capacity, and short bonding jumper is vertical with metallic rod, and top is short
Bonding jumper is connected with one end of upper metal bar, and, in the point midway of short bonding jumper, the short bonding jumper in lower section is golden with lower section for junction point
The one end belonging to bar connects, and junction point connects the horizontal of resonant ring in the point midway of short bonding jumper, the other end of two metallic rod
Side；Second resonator and the 3rd resonator are symmetrical along the longitudinal midline of resonant ring；
Second resonator and the 3rd resonator are respectively connected with a HEMT；High electron mobility crystal
The source electrode of pipe and drain electrode are connected with two short bonding jumpers respectively, and grid is connected to negative voltage by gate connection line and loads electrode；
Resonant ring loads electrode formation circuit with positive voltage and is connected.
The material of described Semiconductor substrate is sapphire, High Resistivity Si, carborundum, GaAs or indium phosphide；
The material of described epitaxial layer be AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs,
AlGaAs/InGaAs/InP or Graphene；
Described gate connection line and peripheral resonant ring are the thick metallic film lines of 150～500nm.
The present invention also provides a kind of preparation method of the Terahertz blue shift manipulator based on Controlled Crystal pipe, and its feature exists
In comprising the steps：
1）Semiconductor substrate materials select the thick Sapphire Substrate of 400um, and epitaxial layer adopts AlGaN/GaN modulation doping different
Matter is tied;
2）Ion implanting is carried out to the modulation doping heterojunction material of epitaxial layer or etching step to form periodic arrangement
Isolation area, referred to as active area；Then grow layer of sin mask in sample surfaces, then exist through photoetching and reactive ion etching
Ohmic contact windows are formed on SiN mask, it is 20nm that sample is moved to sputtering thickness in magnetron sputtering or electron beam evaporation equipment
Ni and 50nm of Al, 40nm of Ti, 120nm tetra- layers of metal of Au, stripped after form electrode, warp under nitrogen protection afterwards
Short annealing, that is, form Ohmic contact；
3）Prepared by grid：By the use of Ni as underlying metal, then cover one layer of antioxidative Au making grid, grid thereon
With this active interval formation Schottky contacts；
4）Artificial electromagnetic resonance structure and external circuitses set are carved on the HEMT array completing, that is, are formed complete
Modulation device.
The invention has the beneficial effects as follows：
(1), the present invention can achieve the modulating characteristic of high speed.
（2）, utilize the electric field to characteristic frequency terahertz electromagnetic wave for the Metamaterials resonant element structure in the present invention
Component has forceful electric power magnetic resonance feature, realizes the effective tune to spatial transmission THz wave by adjusted and controlled EMR electromagnetic resonance pattern
System.And, the design is a kind of two-dimension plane structure, can be realized by microfabrication means, technical maturity is it is easy to make.
（3）, the present invention to be operated by automatically controlled, without additional light stimulus, Temperature Excitation etc., other are more multiple
Miscellaneous energisation mode so that this device miniaturization, practical with yield in terms of there is very big advantage.
（4）, how many by changing periodic unit amounts purpose, different size of terahertz wave beam can be controlled, design
Flexibly, convenient customization.
（5）, the resonance structure designed by the present invention, two kinds of resonance be can achieve by the break-make changing left and right two transistor
The change in loop, finally realizes dual-frequency point modulation and frequency translation, and this is blue with frequency to terahertz wave band double frequency-band modulation technique
The development tool moving device has very great help.
（6）, the present invention be directed to spatial transmission terahertz electromagnetic wave, be operable with room temperature, normal pressure, under non-vacuum condition, no
Need loading waveguide it is easy to encapsulation, convenient use.
Brief description
Fig. 1 is the overall schematic of the present invention.
Fig. 2 is the modulating unit schematic diagram of the present invention, and wherein a is floor map, and b is schematic perspective view.
Fig. 3 is the electric field and Surface current distribution ideograph being not powered under pressure condition.
Fig. 4 is electric field and Surface current distribution ideograph under applied voltage state.
Fig. 5 is present invention absorbance spectrogram under different voltages.
Specific embodiment
The present invention provides the Metamaterials resonance battle array to terahertz electromagnetic wave on specific frequency with frequency response
Array structure is combined with HEMT by array structure using microelectronic processing technology, and passes through Applied gate
The break-make of controlling transistor, eventually through automatically controlled change structure resonance pattern to realize resonant frequency point blue shift thus formed right
Terahertz wave modulation.Its blue shift mechanism is specially when transistor gate negative applied voltage, and HEMT is in pinch off state, resonance
Cellular construction capacitance sheet assumes very strong capacity effect to incident THz wave electric field component, and when no-voltage loads, HEMT leads
Logical, formed between capacitance sheet and connect, original capacity effect weakens until disappearing, due to electric capacity change so that resonant frequency to
, blue-shifted phenomenon in high-frequency mobile.
The present invention includes Semiconductor substrate, epitaxial layer, transistor array, Metamaterials resonance array structure, voltage
Load electrode.Epitaxial layer is located in Semiconductor substrate, and processing on epitaxial layer forms transistor array, and Metamaterials is humorous
Array structure respective production of shaking on the transistor array after load electrode with generating positive and negative voltage respectively and be connected.
It is sapphire, High Resistivity Si, InP, GaAs or carborundum that described Semiconductor substrate includes described Semiconductor substrate；Extension
The material of layer is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or AlGaAs/InGaAs/InP.
Described transistor array is to be formed by the single transistor periodic arrangement that many has source grid leak.Each transistor
Get an electric shock including modulation doping heterojunction material, source electrode Ohm contact electrode, drain ohmic contact electrode and grid schottky junctions
Pole.Its source electrode is connected with the capacitance sheet in Metamaterials resonant element with drain electrode.Capacitance sheet refers to left and right in each unit
Lateral metal bar at resonator opening.
Described Metamaterials resonance array structure includes the single resonant element of multiple periodic arrangement.Each is humorous
The unit that shakes includes the resonant ring of 3 resonators with opening and periphery.Resonator is respectively positioned within peripheral resonant ring, middle
First resonator includes upper and lower two metallic rod, and metallic rod is vertical with resonant ring to be connected.The two opening resonators in left and right are by two
Metallic rod is constituted with short lateral metal bar, and metallic rod is equally vertical with resonant ring to be connected and be symmetrically distributed in middle opening resonator
Both sides.This Metamaterials resonance structure has the characteristics that incident THz wave electric field component is responded.Adjacent resonant element
Uppermost long bonding jumper passes through metal contact wires and is connected, and is connected to positive voltage loading electrode；The grid of each unit passes through grid
Pole connecting line is connected as straight line, loads electrode with negative voltage and is connected.
In particular, Metamaterials is combined with HEMT and forms a kind of audion by the present invention, utilizes
In the resonance characteristic of Metamaterials and HEMT, the high mobility characteristic of two-dimensional electron gas, to realize to spatial transmission
Effective, the quick dynamic modulation of terahertz electromagnetic wave.Demonstrating the present invention by simulation calculation and experimental verification is a kind of structure
Simply, easy to process, and there is the Terahertz fast modulation device of higher modulation depth.
Global design scheme schematic diagram such as Fig. 1 of the present invention, including Semiconductor substrate（1）, epitaxial layer（2）, positive voltage adds
Carry electrode（3）, modulating unit array（4）, negative voltage load electrode（5）.Wherein, Semiconductor substrate（1）Growing epitaxial layers
（2）, epitaxial layer（2）Upper setting modulation Metamaterials resonance array structure（4）, positive voltage load electrode（3）And negative voltage
Load electrode（5）.
Described modulating unit array（4）Including M*N modulating unit, wherein M>3,N>3.
Described modulating unit includes HEMT and Metamaterials resonant element structure, as Fig. 2 institute
Show.
Described HEMT includes source electrode（7）, drain electrode（8）, grid（9）With modulation doping dissimilar materials
（6）.
Described Metamaterials resonant element structure includes the rectangle resonant ring of 3 opening resonators and periphery.Resonance
Device is respectively positioned within peripheral resonant ring, and the first middle resonator includes upper and lower two metallic rod, the horizontal stroke of metallic rod and resonant ring
Vertically connect to side.Left and right two resonator is constituted by two short bonding jumpers and two vertical metal bars, and in symmetrical above and below
Distribution, short bonding jumper is vertical with metallic rod to be connected, and in the point midway of short bonding jumper, metallic rod is vertical with resonant ring to be connected junction point
Connect, and be symmetrically distributed in middle opening resonator both sides, in other words, axis of symmetry is the longitudinal midline of rectangle resonant ring.Positioned at upper
Two short bonding jumpers of side are arranged at the source electrode Ohm contact electrode of transistor（7）On, underlying two short bonding jumpers
It is arranged at the drain ohmic contact electrode of transistor（8）On.This resonance structure can achieve to incident THz wave electric field component
Produce forceful electric power magnetic resonance.
The side of adjacent resonant ring the top is passed through metal wire and is connected, and finally loads electrode with positive voltage and is connected, i.e. transistor
Source electrode, drain electrode with positive voltage load electrode（3）It is connected.It is long that the widthwise edge length of rectangle resonant ring is more than longitudinal edge.
The gate connection line of horizontally set（10）With grid（9）Connect, connect two resonators in left and right, and single with neighbouring
First gate connection line is connected, and finally loads electrode with negative voltage and is connected, and that is, the grid of transistor and negative voltage load electrode（5）Phase
Even.
In above-mentioned embodiment, Semiconductor substrate can be sapphire, High Resistivity Si, carborundum etc.；Constitute the extension of HEMT
Layer can be that AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs, AlGaAs/InGaAs/InP etc. can structures
Become the semi-conducting material of hetero-junctions；Metal electrode typically adopts the metal such as Ti, Al, Ni, Au, and characteristic close other may also be employed
Metal replaces；Socket circuit can be the materials such as Au, Ag, Cu, Al, forms the thick metallic film lines of 150～500nm.
The present invention is to be realized to spatial transmission terahertz electromagnetic wave by the concentration changing two-dimensional electron gas in HEMT
Dynamic amplitude modulation, the concentration of two-dimensional electron gas is controlled by additional grid voltage size.It is specially：With grid phase in structure
Electrode PAD even（5）Load negative voltage, the electrode PAD being connected with source and drain（3）Load positive voltage, when added voltage difference be 4～
During 10V, the two-dimensional electron gas in HEMT are progressively depleted, form pinch off state, and the source and drain of the right and left is off, on
Form electric capacity between lower two short bonding jumpers, form resonance loop with peripheral resonant ring left and right sides bonding jumper respectively, electric field is main
Concentrate between the source-drain electrode of left and right two HEMT（Accompanying drawing 4）, now the resonant frequency of structure is f1.It is being not added with voltage condition
When, turn between source and drain, now middle opening resonator forms resonant ring with both sides source and drain conducting resonator respectively, and electric field is main
Concentrate at the opening of intermediate resonator（Accompanying drawing 3）, now the resonant frequency of structure is f2.Therefore can by applied voltage signal
Realize the quick dynamic tuning to mode of resonance in resonance structure, change resonant frequency, thus realizing to space THz wave
Amplitude modulation(PAM).
Experiment：
The present invention（A kind of Controlled Crystal pipe Terahertz blue shift manipulator）, structure as shown in Fig. 2 include Semiconductor substrate,
Epitaxial layer, transistor array, Metamaterials resonance array structure and positive and negative loading electrode.Described Semiconductor substrate is adopted
With the Sapphire Substrate that 400um is thick, this material to the transmitance of space terahertz electromagnetic wave preferably, and machine laggard
Row is thinning to can further improve transmitance；Described epitaxial layer adopts AlGaN/GaN modulation doping hetero-junctions, can be by outside molecular beam
Prolong（MBE）, hydride gas-phase epitaxy（HVPE）And gas phase epitaxy of metal organic compound（MOCVD）Etc. method preparation.Described epitaxial layer
Modulation doping heterojunction material need to first carry out ion implanting or etching step to form the isolation area of periodic arrangement, referred to as have
Source region；Then grow layer of sin mask in sample surfaces, then through photoetching and reactive ion etching, Europe is formed on SiN mask
Nurse contact window, sample is moved to sputtering Ti (20nm)/Al (120nm)/Ni in magnetron sputtering or electron beam evaporation equipment
(40nm) four layers of metal of/Au (50nm), stripped rear formation electrode, afterwards under nitrogen protection through short annealing, that is, form Europe
Nurse contacts, and Ohm contact electrode is slightly larger than active area；Grid is by the use of work function Ni preferable compared with high-adhesiveness as bottom gold
Belong to, then cover one layer of antioxidative Au thereon making, grid forms Schottky contacts with this active interval；Finally will be artificial
EMR electromagnetic resonance structure and external circuitses set are carved on the HEMT array completing, that is, form complete modulation device.Described
Artificial electromagnetic resonance structure and external circuitses are the Au of 200nm.Pass through in experiment to load electrode and negative voltage in positive voltage
Load making alive on electrode to modulate the dynamic amplitude to realize the space terahertz electromagnetic wave to vertical incidence.
Through the emulation of 3 D electromagnetic simulation softward, above-mentioned Controlled Crystal pipe Terahertz blue shift manipulator proves that it is feasible, figure
3rd, Fig. 4 be not powered on pressing and two kinds of making alive in the case of the electric field of manipulator and surface current pattern scattergram.Fig. 5 is different electricity
The absorbance spectrogram of pressure.Result shows, applied voltage makes two-dimensional electron gas change so that the mode of resonance of this device
Changing, thus producing resonant frequency peak shift phenomenon, the amplitude modulation(PAM) to space THz wave being realized with this.Specifically
For：When positive voltage loads electrode and added by negative voltage loading electrode, voltage difference is for 4～10V, two-dimensional electron gas reduce, position
Source transistor drain electrode under artificial electromagnetic medium is in pinch off state, at this moment two resonators in left and right respectively with peripheral resonant ring
The right and left bonding jumper forms resonance loop, and electric field is concentrated mainly between the source-drain electrode of left and right two transistor, now resonance
Frequency is f1.Reduce with added voltage difference, two-dimensional electron gas constantly become big, and HEMT begins to turn on, when applied voltage is
When zero, HEMT is in the conduction state, and now middle opening resonator forms resonance loop with both sides source and drain conducting resonator respectively,
Electric field is concentrated mainly at intermediate resonator opening, and now resonant frequency is f2.Taper into applied voltage, resonance loop
Change, and resonance frequency is from f1Change to f2, blue-shifted phenomenon occurs.Can see in f from transmission spectrum1This is humorous
Shake on frequency, THz wave transmitance is changed into 72% from 13%.For f2This frequency, transmitance changes to 14% from 73%.This just says
This device bright can achieve the THz wave to spatial transmission in f1And f2Amplitude modulation(PAM) on this two frequency bins.
Claims (2)
1. the Terahertz blue shift manipulator based on Controlled Crystal pipe is it is characterised in that include Semiconductor substrate (1), epitaxial layer
(2), positive voltage loads electrode (3), modulating unit array (4), negative voltage loading electrode (5)；
Epitaxial layer (2) is arranged in Semiconductor substrate (1), and modulating unit array (4), positive voltage load electrode (3) and negative voltage
Load electrode (5) to be arranged on epitaxial layer (2)；
Described modulating unit array (4) includes M × N number of modulating unit, wherein, M>3, N>3；
Each modulating unit includes resonant element and HEMT, HEMT source electrode and drain electrode
It is connected with the capacitance sheet in resonant element structure；
Described resonant element includes the resonant ring of rectangle and is arranged at the first resonator within resonant ring, the second resonator and the
Three resonators；
First resonator is the metallic rod of middle opening, and it is perpendicular to the widthwise edge of resonant ring, and connects with the widthwise edge of resonant ring
It is connected to the midpoint of widthwise edge；
Second resonator and the 3rd resonator are by the short bonding jumper of two horizontally sets and two longitudinally disposed metallic rod structures
Become, and symmetrical above and below；Two short bonding jumpers are the capacitance sheet constituting electric capacity, and short bonding jumper is vertical with metallic rod；The short metal in top
Bar is connected with one end of upper metal bar, junction point in the point midway of short bonding jumper, the short bonding jumper in lower section and lower-lying metal bar
One end connect, in the point midway of short bonding jumper, the other end of two metallic rod connects the widthwise edge of resonant ring to junction point；The
Two resonators and the 3rd resonator are symmetrical along the longitudinal midline of resonant ring；
Second resonator and the 3rd resonator are respectively connected with a HEMT；HEMT
Source electrode and drain electrode are connected with two short bonding jumpers respectively, and grid is connected to negative voltage by gate connection line and loads electrode (5)；
Resonant ring loads electrode (3) formation circuit with positive voltage and is connected.
2. the Terahertz blue shift manipulator based on Controlled Crystal pipe as claimed in claim 1 is it is characterised in that described quasiconductor
The material of substrate (1) is sapphire, High Resistivity Si, carborundum, GaAs or indium phosphide；
The material of described epitaxial layer (2) be AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs,
AlGaAs/InGaAs/InP or Graphene；
Described gate connection line and peripheral resonant ring are the thick metallic film lines of 150～500nm.
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| CN105301804B (en) * | 2015-10-20 | 2017-10-20 | 南京大学 | New Terahertz superconduction modulator and modulator approach |
| CN105372850B (en) * | 2015-12-07 | 2018-02-13 | 电子科技大学 | A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe |
| CN105549228B (en) * | 2015-12-21 | 2018-06-19 | 电子科技大学 | One kind is based on high electron mobility transistor Terahertz Spatial Phase Modulator |
| CN105610410B (en) * | 2015-12-21 | 2018-04-06 | 电子科技大学 | A kind of Terahertz multiband modulator based on HEMT |
| CN105652475B (en) * | 2016-01-14 | 2018-06-19 | 电子科技大学 | A kind of terahertz wave modulator based on co-planar waveguide binding crystal pipe |
| CN106405883A (en) * | 2016-04-12 | 2017-02-15 | 电子科技大学 | Frequency point-adjustable THz wave modulator based on transistor with high electronic mobility |
| CN107144985B (en) * | 2017-06-21 | 2019-06-21 | 电子科技大学 | A kind of netted automatically controlled terahertz wave modulator of HEMT array being dislocatedly distributed |
| CN108417589A (en) * | 2018-01-16 | 2018-08-17 | 电子科技大学 | Based on high electron mobility transistor wavefront fast scan imaging modulator |
| CN109633772A (en) * | 2018-12-26 | 2019-04-16 | 苏州耶拿微电子有限公司 | The passive superconduction Terahertz human body security check system of 110GHz |
| CN110444889B (en) * | 2019-06-27 | 2021-03-23 | 电子科技大学 | Terahertz electric control resonance switching type super-surface phase shift device |
| CN110445553B (en) * | 2019-08-27 | 2024-06-07 | 桂林电子科技大学 | Voltage-controlled terahertz 2-bit encoding device and system |
| CN111884593B (en) * | 2020-08-04 | 2021-04-20 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN112636002B (en) * | 2020-12-18 | 2022-02-01 | 北京航空航天大学青岛研究院 | Tunable metamaterial device based on TFT (thin film transistor) process and manufacturing method thereof |
| CN113253489B (en) * | 2021-05-28 | 2024-07-23 | 重庆邮电大学 | Terahertz multichannel modulator and preparation method thereof |
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| CN103346406A (en) * | 2013-05-20 | 2013-10-09 | 电子科技大学 | Terahertz wave spatial external modulator based on high electron mobility transistor |
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