CN104465342A - Terahertz blueshift modulator based on electric-control transistor and preparation method - Google Patents
Terahertz blueshift modulator based on electric-control transistor and preparation method Download PDFInfo
- Publication number
- CN104465342A CN104465342A CN201310554387.0A CN201310554387A CN104465342A CN 104465342 A CN104465342 A CN 104465342A CN 201310554387 A CN201310554387 A CN 201310554387A CN 104465342 A CN104465342 A CN 104465342A
- Authority
- CN
- China
- Prior art keywords
- electrode
- resonator
- terahertz
- resonant ring
- epitaxial loayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000011068 loading method Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- -1 High Resistivity Si Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 16
- 238000004891 communication Methods 0.000 description 15
- 230000005533 two-dimensional electron gas Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a terahertz blueshift modulator based on an electric-control transistor and a preparation method, and belongs to the technical field of electromagnetic function devices. The terahertz blueshift modulator comprises a semiconductor substrate, an epitaxial layer, a positive voltage loading electrode, a modulation unit array and a negative voltage loading electrode. The epitaxial layer is arranged on the semiconductor substrate. The modulation unit array, the positive voltage loading electrode and the negative voltage loading electrode are arranged on the epitaxial layer. The modulation unit array comprises M*N modulation units, wherein M is larger than 3 and N is larger than 3. Each modulation unit comprises a resonance unit and a high-electronic-mobility transistor, wherein the source electrode and the drain electrode of the high-electronic-mobility transistor are connected with a capacitance piece in the resonance unit structure. The terahertz blueshift modulator can achieve on-off control over terahertz waves of two frequency points, and can achieve rapid amplitude modulation to the terahertz waves.
Description
Technical field
The invention belongs to function solenoid device arts, particularly the quick dynamic multifunctional device of terahertz wave band.
Background technology
Terahertz (Terahertz, THz) ripple is one urgently electromagnet wave spectrum leaved for development, is often referred to the electromagnetic wave of frequency within the scope of 0.1THz ~ 10THz.This frequency range, between millimeter wave and infrared, light, has the electromagnetic property of many uniquenesses.Thus make it in physics, chemistry, electronic information, life science, material science, astronomy, air and environmental monitoring, national security and anti-terrorism, to communicate and the field such as radar has extremely important potential value.
Terahertz radio communication as one of the most important application direction in Terahertz field receives the attention of countries in the world at present.Compared to the conventional communication mode such as microwave radio commu, wireless light communication, Terahertz wireless communication system has the advantage of its uniqueness.Such as compared to microwave radio commu, Terahertz wireless communication system can provide larger bandwidth, higher transmission speed, and in addition, the size of antenna will significantly reduce, and is suitable for intersatellite communication; Terahertz wireless communication system can provide multi-channel data transmission, and its sphere of action is greater than sighting distance infrared transmission; Relative to wireless light communication, the loss of wireless light communication derives from scattering and the absorption of cloud, rain, dust etc., frequency is higher, scattering is stronger, and compared to light wave, the particle scattering of THz wave is much smaller, therefore Terahertz communication can be used as the back-up system of optical communication link, at dense smoke, under Sand Dust Environment, still keep closely broadband connections.Terahertz wireless communication technology is subject to the great attention of Western power always, such as inter-satellite interstellar communication, short distance atmospheric communication, short distance terrestrial wireless local area network (LAN) etc.
Have benefited from the develop rapidly of THz source and receiving system, the Terahertz modulator as communications system core device becomes the emphasis in current Terahertz Technology field.Compared to conventional modulated device, the manufacture craft of terahertz wave modulator requires micron even nanometer scale, and traditional mechanical processing tools is difficult to be utilized effectively.Therefore only have and produce by means such as the photoetching in microelectronic technique the new device that can be used for terahertz wave band.In recent years, the article of many sections of THz wave external modulators has been published successively at top publications of international natural science such as Nature/Science, its content comprises and combining with artificial electromagnetic medium (Metamaterials) based on mixing silica-based, GaAs based, phase-change material base and Graphene etc., utilizes the energisation mode of additional temperature, illumination, electric field etc. to realize Terahertz wave modulation.Design a kind of efficient, practical novel Terahertz modulator as can be seen here and become one of the important directions in current Terahertz field.
Controlled Crystal pipe is the core of current microelectronic industry.Along with the continuous progress of semiconductor technology, the transistor (HEMT) with high electron mobility has shown remarkable performance.HEMT is a kind of by controlling to be present in the novel field effect transistor that the modulation two-dimensional electron gas (2-DEG) mixed in heterojunction carries out work.HEMT not only has wide with gap, but also has that thermal conductivity is large, electron saturation velocities is high, breakdown field is powerful and the feature such as Heat stability is good, is now progressively applied to the fields such as terahertz detector, amplifier, wave detector, frequency mixer.Use the electromagnetic property of MATERIALS ' DYNAMIC response characteristic in conjunction with artificial array structure of HEMT, the regulation and control device of exploitation THz wave will have important science and application prospect.
Artificial electromagnetic medium (Metamaterials) refers to by artificially designing electromagnetic resonance unit to realize the novel artificial cycle electromagnetic array structure externally powering up Magnetic control, and it mainly can be divided into electric field response, magnetic responsiveness and structure that the two responds simultaneously.Wherein the Metamaterials cellular construction of electric field response is simple and have strong electromagnetic resonance, therefore has wider application at terahertz wave band.And to be combined with HEMT by the resonance structure unit of electric field response be current one of effective technical way that can realize Terahertz fast modulator in the world.
Summary of the invention
Technical problem to be solved by this invention is, a kind of etamaterial resonance array structure to the response of THz wave electric field component is provided, and combine with HEMT and define automatically controlled THz wave blue shift modulator, this modulator can carry out break-make control to the THz wave of two frequency bins simultaneously.Can realize modulating the fast amplitude of THz wave.
The technical scheme that the present invention solve the technical problem employing is, based on the Terahertz blue shift modulator of Controlled Crystal pipe, it is characterized in that, comprises Semiconductor substrate, epitaxial loayer, positive voltage loading electrode, modulating unit array, negative voltage loading electrode;
Epitaxial loayer is arranged in Semiconductor substrate, and modulating unit array, positive voltage load electrode and negative voltage loading electrode is arranged on epitaxial loayer;
Described modulating unit array comprises M × N number of modulating unit, wherein, and M>3, N>3;
Each modulating unit comprises resonant element and High Electron Mobility Transistor, and High Electron Mobility Transistor source electrode is connected with the capacitance sheet in resonant element structure with drain electrode.
Described resonant element comprises the resonant ring of rectangle and is arranged at the first resonator of resonant ring inside, the second resonator and the 3rd resonator;
First resonator is the Metallic rod of middle opening, and it is perpendicular to the widthwise edge of resonant ring, and is connected to the mid point of widthwise edge with the widthwise edge of resonant ring;
Second resonator and the 3rd resonator are formed by the short bonding jumper of two horizontally sets and the Metallic rod of two longitudinal settings, and it is symmetrical up and down, two short bonding jumpers are the capacitance sheet forming electric capacity, short bonding jumper is vertical with Metallic rod, the short bonding jumper in top is connected with one end of upper metal bar, tie point is at the point midway of short bonding jumper, the short bonding jumper in below is connected with one end of lower-lying metal bar, tie point is at the point midway of short bonding jumper, and the other end of two Metallic rod connects the widthwise edge of resonant ring; Second resonator and the 3rd resonator are symmetrical along the longitudinal midline of resonant ring;
Second resonator and the 3rd resonator are respectively connected with a High Electron Mobility Transistor; The source electrode of High Electron Mobility Transistor is connected with two short bonding jumpers respectively with drain electrode, and grid is connected to negative voltage by gate connection line and loads electrode; Resonant ring and positive voltage load electrode and form circuit and be connected.
The material of described Semiconductor substrate is sapphire, High Resistivity Si, carborundum, GaAs or indium phosphide;
The material of described epitaxial loayer is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs, AlGaAs/InGaAs/InP or Graphene;
Described gate connection line and peripheral resonant ring are the metallic film lines that 150 ~ 500nm is thick.
The present invention also provides a kind of preparation method of the Terahertz blue shift modulator based on Controlled Crystal pipe, it is characterized in that, comprises the steps:
1) the semiconductor substrate materials Sapphire Substrate of selecting 400um thick, epitaxial loayer adopts AlGaN/GaN modulation doping heterojunction;
2) ion implantation carried out to the modulation doping heterojunction material of epitaxial loayer or etch step to form the isolated area of periodic arrangement, being called active area; Then at sample surfaces growth layer of sin mask, on SiN mask, ohmic contact windows is formed again through photoetching and reactive ion etching, sample is moved in magnetron sputtering or electron beam evaporation equipment and sputter Au tetra-layers of metal that thickness is Ni and 50nm of Al, 40nm of Ti, 120nm of 20nm, electrode is formed after peeling off, afterwards under nitrogen protection through short annealing, namely form ohmic contact;
3) grid preparation: utilize Ni as underlying metal, then cover one deck oxidation resistant Au making grid thereon, form Schottky contacts between grid and this active area;
4) artificial electromagnetic resonance structure and external circuits cover are carved on the HEMT array completed, namely form complete modulation device.
The invention has the beneficial effects as follows:
(1), the present invention can realize modulating characteristic at a high speed.
(2), the electric field component of Metamaterials resonant element structure to characteristic frequency terahertz electromagnetic wave is utilized to have strong electromagnetic resonance feature, by the effective modulation of adjusted and controlled electromagnetic resonance pattern realization to spatial THz wave in the present invention.Further, the design is a kind of two-dimension plane structure, realizes, technical maturity by microfabrication means, is easy to make.
(3), the present invention carries out work by automatically controlled, and do not need other comparatively complicated energisation modes such as additional light stimulus, Temperature Excitation, make this device miniaturized, practical with output in there is very large advantage.
(4), by how much changing periodic unit amounts object, can the terahertz wave beam of different size be controlled, flexible design, convenient customization.
(5) resonance structure, designed by the present invention, the change of two kinds of resonant tanks can be realized by the break-make changing left and right two transistor, finally realize dual-frequency point modulation and frequency translation, this has very great help to the development tool of terahertz wave band double frequency-band modulation technique and frequency blue shift device.
(6), the present invention is directed to spatial terahertz electromagnetic wave, under normal temperature, normal pressure, non-vacuum condition can be worked in, without the need to loading waveguide, be easy to encapsulation, easy to use.
Accompanying drawing explanation
Fig. 1 is overall schematic of the present invention.
Fig. 2 is modulating unit schematic diagram of the present invention, and wherein a is floor map, and b is schematic perspective view.
Fig. 3 is electric field under non-making alive state and Surface current distribution ideograph.
Fig. 4 is electric field under applied voltage state and Surface current distribution ideograph.
Fig. 5 is the present invention's transmissivity spectrogram under different voltage.
Embodiment
The invention provides Metamaterials resonance array structure terahertz electromagnetic wave on specific frequency to frequency response, microelectronic processing technology is utilized to be combined with High Electron Mobility Transistor by array structure, and the break-make of transistor is controlled by Applied gate, realize the blue shift of resonant frequency point eventually through automatically controlled change structure mode of resonance thus formed Terahertz wave modulation.Its blue shift mechanism is specially when transistor gate negative applied voltage, HEMT is in pinch off state, resonant element structure capacitive sheet presents very strong capacity effect to incident THz wave electric field component, and during no-voltage loading, HEMT conducting, is formed between capacitance sheet and connects, original capacity effect weakens until disappear, due to the change of electric capacity, make resonance frequency to high-frequency mobile, occur blue-shifted phenomenon.
The present invention includes Semiconductor substrate, epitaxial loayer, transistor array, Metamaterials resonance array structure, voltage-drop loading electrode.Epitaxial loayer is positioned in Semiconductor substrate, and epitaxial loayer is processed to form transistor array, Metamaterials resonance array structure respective production on transistor array after load electrode with generating positive and negative voltage respectively and be connected.
It is sapphire, High Resistivity Si, InP, GaAs or carborundum that described Semiconductor substrate comprises described Semiconductor substrate; The material of epitaxial loayer is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or AlGaAs/InGaAs/InP.
Described transistor array is formed by many single transistor periodic arrangement with source grid leak.Each transistor comprises modulation doping heterojunction material, source electrode Ohm contact electrode, drain ohmic contact electrode and grid Schottky contact electrode.Its source electrode is connected with the capacitance sheet in Metamaterials resonant element with drain electrode.Capacitance sheet refers to the lateral metal bar of resonator opening part in left and right in each unit.
Described Metamaterials resonance array structure comprises the single resonant element of multiple periodic arrangement.Each resonant element comprises 3 resonators with opening and peripheral resonant ring.Resonator is all positioned within peripheral resonant ring, and the first middle resonator comprises upper and lower two Metallic rod, and Metallic rod is connected with resonant ring is vertical.Two the opening resonators in left and right are made up of two Metallic rod and short lateral metal bar, and Metallic rod is connected with resonant ring is vertical and is symmetrically distributed in middle opening resonator both sides equally.This Metamaterials resonance structure has the feature to incident THz wave electric field component response.The uppermost long bonding jumper of adjacent resonant element is connected by metal contact wires, and is connected to positive voltage loading electrode; The grid of each unit is connected for straight line by gate connection line, loads electrode be connected with negative voltage.
In particular, Metamaterials and HEMT combines and forms a kind of audion by the present invention, utilize the high mobility characteristic of two-dimensional electron gas in the resonance characteristic of Metamaterials and HEMT, realize effective, the quick dynamic modulation of the terahertz electromagnetic wave to spatial.By simulation calculation and experimental verification demonstrate the present invention be a kind of structure simple, be easy to process, and there is the Terahertz fast modulation device of the higher modulation degree of depth.
Global design scheme schematic diagram of the present invention, as Fig. 1, comprises Semiconductor substrate (1), epitaxial loayer (2), positive voltage loading electrode (3), modulating unit array (4), negative voltage loading electrode (5).Wherein, Semiconductor substrate (1) growing epitaxial layers (2), epitaxial loayer (2) is arranged modulation Metamaterials resonance array structure (4), positive voltage loads electrode (3) and negative voltage loads electrode (5).
Described modulating unit array (4) comprises M*N modulating unit, wherein M>3, N>3.
Described modulating unit comprises High Electron Mobility Transistor and Metamaterials resonant element structure, as shown in Figure 2.
Described High Electron Mobility Transistor comprises source electrode (7), drain electrode (8), grid (9) and modulation doping dissimilar materials (6).
Described Metamaterials resonant element structure comprises 3 opening resonators and peripheral rectangle resonant ring.Resonator is all positioned within peripheral resonant ring, and the first middle resonator comprises upper and lower two Metallic rod, and Metallic rod is connected with the widthwise edge of resonant ring is vertical.Two resonators in left and right are formed by two short bonding jumpers and two vertical metal bars, and in symmetrical up and down, short bonding jumper is connected with Metallic rod is vertical, tie point is at the point midway of short bonding jumper, Metallic rod is connected with resonant ring is vertical, and be symmetrically distributed in middle opening resonator both sides, in other words, symmetry axis is the longitudinal midline of rectangle resonant ring.Two the short bonding jumpers being positioned at top are arranged on the source electrode Ohm contact electrode (7) of transistor, and two the short bonding jumpers being positioned at below are arranged on the drain ohmic contact electrode (8) of transistor.This resonance structure can realize producing strong electromagnetic resonance to incident THz wave electric field component.
The limit of adjacent resonant ring the top is connected by metal wire, finally loads electrode with positive voltage and is connected, namely transistor source electrode, draining loads electrode (3) with positive voltage and is connected.The widthwise edge of rectangle resonant ring is grown up in longitudinal length of side.
The gate connection line (10) of horizontally set is connected with grid (9), connects two resonators in left and right, and to be connected with adjacent unit gate connection line, finally to load electrode with negative voltage and be connected, and namely the grid of transistor loads electrode (5) with negative voltage and is connected.
In above-mentioned execution mode, Semiconductor substrate can be sapphire, High Resistivity Si, carborundum etc.; The epitaxial loayer forming HEMT can be the semi-conducting material that AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs, AlGaAs/InGaAs/InP etc. can form heterojunction; Metal electrode generally adopts the metals such as Ti, Al, Ni, Au, and other metals of characteristic close also can be adopted to replace; Socket circuit can be the materials such as Au, Ag, Cu, Al, forms the metallic film lines that 150 ~ 500nm is thick.
The present invention is that the concentration by changing two-dimensional electron gas in HEMT realizes modulating the dynamic amplitude of spatial terahertz electromagnetic wave, and the concentration of two-dimensional electron gas is controlled by additional grid voltage size.Be specially: the electrode PAD(5 be connected with grid in structure) load negative voltage, the electrode PAD(3 be connected with source and drain) load positive voltage, when added voltage difference is 4 ~ 10V, two-dimensional electron gas in HEMT is progressively depleted, form pinch off state, the source and drain of the right and left is in off-state, electric capacity is formed between upper and lower two short bonding jumpers, resonance loop is formed respectively with peripheral resonant ring left and right sides bonding jumper, electric field mainly concentrate on left and right two HEMT source-drain electrode between (accompanying drawing 4), now the resonance frequency of structure is f
1.When not making alive situation, conducting between source and drain, now middle opening resonator forms resonant ring with both sides source and drain conducting resonator respectively, and electric field mainly concentrates on the opening part (accompanying drawing 3) of intermediate resonator, and now the resonance frequency of structure is f
2.Therefore can realize the quick dynamic tuning to mode of resonance in resonance structure by applied voltage signal, change resonance frequency, thus realize the amplitude modulation(PAM) to space THz wave.
Experiment:
The present invention's (a kind of Controlled Crystal pipe Terahertz blue shift modulator), structure as shown in Figure 2, comprises Semiconductor substrate, epitaxial loayer, transistor array, Metamaterials resonance array structure and positive and negative loading electrode.Described Semiconductor substrate adopts the Sapphire Substrate that 400um is thick, and this material is better to the transmitance of space terahertz electromagnetic wave, and carries out after machining thinningly can further improve transmitance; Described epitaxial loayer adopts AlGaN/GaN modulation doping heterojunction, by method preparations such as molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) and gas phase epitaxy of metal organic compound (MOCVD).The modulation doping heterojunction material of described epitaxial loayer first need carry out ion implantation or etch step to form the isolated area of periodic arrangement, is called active area; Then at sample surfaces growth layer of sin mask, on SiN mask, ohmic contact windows is formed again through photoetching and reactive ion etching, sample is moved to sputtered with Ti (20nm) in magnetron sputtering or electron beam evaporation equipment/Al (120nm)/Ni (40nm)/Au (50nm) four layers of metal, electrode is formed after peeling off, afterwards under nitrogen protection through short annealing, namely form ohmic contact, Ohm contact electrode is slightly larger than active area; Grid be utilize work function comparatively the good Ni of high-adhesiveness as underlying metal, then cover one deck oxidation resistant Au thereon and make, form Schottky contacts between grid and this active area; Finally artificial electromagnetic resonance structure and external circuits cover are carved on the HEMT array completed, namely form complete modulation device.Described artificial electromagnetic resonance structure and external circuits are the Au of 200nm.Realize modulating the dynamic amplitude of the space terahertz electromagnetic wave of vertical incidence by loading making alive on electrode and negative voltage loading electrode at positive voltage in experiment.
Through the emulation of 3 D electromagnetic simulation softward, above-mentioned Controlled Crystal pipe Terahertz blue shift modulator proves that it is feasible, Fig. 3, Fig. 4 are electric field and the surface current mode profile figure of non-making alive and making alive two kinds of situation modulated devices.Fig. 5 is the transmissivity spectrogram under different voltage.Result shows, applied voltage makes two-dimensional electron gas change, and the mode of resonance of this device is changed, thus produces resonant frequency peak shift phenomenon, realizes the amplitude modulation(PAM) to space THz wave with this.Be specially: when positive voltage load electrode and negative voltage load that added by electrode, voltage difference is 4 ~ 10V time, two-dimensional electron gas reduces, the source transistor drain electrode be positioned under artificial electromagnetic medium is in pinch off state, at this moment two resonators in left and right form resonance loop with peripheral resonant ring the right and left bonding jumper respectively, electric field mainly concentrates between the source-drain electrode of left and right two transistor, and now resonance frequency is f
1.Along with added voltage difference reduces, two-dimensional electron gas constantly becomes large, HEMT starts conducting, when applied voltage is zero, HEMT is in conducting state, now middle opening resonator forms resonance loop with both sides source and drain conducting resonator respectively, and electric field mainly concentrates on intermediate resonator opening part, and now resonance frequency is f
2.Along with applied voltage diminishes gradually, resonance loop changes, and resonance frequency is from f
1change to f
2, there is blue-shifted phenomenon.Can see at f from transmission spectrum
1on this resonance frequency, THz wave transmitance becomes 72% from 13%.For f
2this frequency, transmitance changes to 14% from 73%.This just illustrates that this device can realize the THz wave of spatial at f
1and f
2amplitude modulation(PAM) on this two frequency bins.
Claims (4)
1. based on the Terahertz blue shift modulator of Controlled Crystal pipe, it is characterized in that, comprise Semiconductor substrate (1), epitaxial loayer (2), positive voltage loading electrode (3), modulating unit array (4), negative voltage loading electrode (5);
Epitaxial loayer (2) is arranged in Semiconductor substrate (1), and modulating unit array (4), positive voltage load electrode (3) and negative voltage loading electrode (5) is arranged on epitaxial loayer (2);
Described modulating unit array (4) comprises M × N number of modulating unit, wherein, and M>3, N>3;
Each modulating unit comprises resonant element and High Electron Mobility Transistor, and High Electron Mobility Transistor source electrode is connected with the capacitance sheet in resonant element structure with drain electrode.
2., as claimed in claim 1 based on the Terahertz blue shift modulator of Controlled Crystal pipe, it is characterized in that:
Described resonant element comprises the resonant ring of rectangle and is arranged at the first resonator of resonant ring inside, the second resonator and the 3rd resonator;
First resonator is the Metallic rod of middle opening, and it is perpendicular to the widthwise edge of resonant ring, and is connected to the mid point of widthwise edge with the widthwise edge of resonant ring;
Second resonator and the 3rd resonator are formed by the short bonding jumper of two horizontally sets and the Metallic rod of two longitudinal settings, and symmetrical up and down; Two short bonding jumpers are the capacitance sheet forming electric capacity, and short bonding jumper is vertical with Metallic rod; The short bonding jumper in top is connected with one end of upper metal bar, tie point is at the point midway of short bonding jumper, the short bonding jumper in below is connected with one end of lower-lying metal bar, and tie point is at the point midway of short bonding jumper, and the other end of two Metallic rod connects the widthwise edge of resonant ring; Second resonator and the 3rd resonator are symmetrical along the longitudinal midline of resonant ring;
Second resonator and the 3rd resonator are respectively connected with a High Electron Mobility Transistor; The source electrode of High Electron Mobility Transistor is connected with two short bonding jumpers respectively with drain electrode, and grid is connected to negative voltage by gate connection line and loads electrode (5);
Resonant ring and positive voltage load electrode (3) and form circuit and be connected.
3., as claimed in claim 2 based on the Terahertz blue shift modulator of Controlled Crystal pipe, it is characterized in that, the material of described Semiconductor substrate (1) is sapphire, High Resistivity Si, carborundum, GaAs or indium phosphide;
The material of described epitaxial loayer (2) is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs, AlGaAs/InGaAs/InP or Graphene;
Described gate connection line and peripheral resonant ring are the metallic film lines that 150 ~ 500nm is thick.
4., based on the preparation method of the Terahertz blue shift modulator of Controlled Crystal pipe, it is characterized in that, comprise the steps:
1) the semiconductor substrate materials Sapphire Substrate of selecting 400um thick, epitaxial loayer adopts AlGaN/GaN modulation doping heterojunction;
2) ion implantation carried out to the modulation doping heterojunction material of epitaxial loayer or etch step to form the isolated area of periodic arrangement, being called active area; Then at sample surfaces growth layer of sin mask, on SiN mask, ohmic contact windows is formed again through photoetching and reactive ion etching, sample is moved in magnetron sputtering or electron beam evaporation equipment and sputter Au tetra-layers of metal that thickness is Ni and 50nm of Al, 40nm of Ti, 120nm of 20nm, electrode is formed after peeling off, afterwards under nitrogen protection through short annealing, namely form ohmic contact;
3) grid preparation: utilize Ni as underlying metal, then cover one deck oxidation resistant Au making grid thereon, form Schottky contacts between grid and this active area;
4) artificial electromagnetic resonance structure and external circuits cover are carved on the HEMT array completed, namely form complete modulation device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554387.0A CN104465342B (en) | 2013-11-08 | 2013-11-08 | Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554387.0A CN104465342B (en) | 2013-11-08 | 2013-11-08 | Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104465342A true CN104465342A (en) | 2015-03-25 |
| CN104465342B CN104465342B (en) | 2017-03-08 |
Family
ID=52911214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310554387.0A Active CN104465342B (en) | 2013-11-08 | 2013-11-08 | Terahertz blue shift manipulator based on Controlled Crystal pipe and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465342B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301804A (en) * | 2015-10-20 | 2016-02-03 | 南京大学 | Novel terahertz superconductive modulator and modulation method |
| CN105372850A (en) * | 2015-12-07 | 2016-03-02 | 电子科技大学 | Terahertz wave rapid modulator based on coplanar waveguide combining transistor |
| CN105549228A (en) * | 2015-12-21 | 2016-05-04 | 电子科技大学 | Terahertz space phase modulator based on high electron mobility transistor |
| CN105610410A (en) * | 2015-12-21 | 2016-05-25 | 电子科技大学 | Terahertz multiband modulator based on high electron mobility transistor |
| CN105652475A (en) * | 2016-01-14 | 2016-06-08 | 电子科技大学 | THz wave rapid modulator based on coplanar waveguide combined transistor |
| CN106405883A (en) * | 2016-04-12 | 2017-02-15 | 电子科技大学 | Frequency point-adjustable THz wave modulator based on transistor with high electronic mobility |
| CN107144985A (en) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | A kind of netted automatically controlled terahertz wave modulator of HEMT arrays being dislocatedly distributed |
| CN108417589A (en) * | 2018-01-16 | 2018-08-17 | 电子科技大学 | Based on high electron mobility transistor wavefront fast scan imaging modulator |
| CN109633772A (en) * | 2018-12-26 | 2019-04-16 | 苏州耶拿微电子有限公司 | The passive superconduction Terahertz human body security check system of 110GHz |
| CN110445553A (en) * | 2019-08-27 | 2019-11-12 | 桂林电子科技大学 | A kind of 2 code devices of voltage-controlled Terahertz and method |
| CN110444889A (en) * | 2019-06-27 | 2019-11-12 | 电子科技大学 | The super surface phase changer of the automatically controlled resonance suitching type of Terahertz |
| CN111884593A (en) * | 2020-08-04 | 2020-11-03 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN112636002A (en) * | 2020-12-18 | 2021-04-09 | 北京航空航天大学青岛研究院 | Tunable metamaterial device based on TFT (thin film transistor) process and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080203399A1 (en) * | 2006-09-18 | 2008-08-28 | Spencer Michael G | Polarization doped transistor channels in sic heteropolytypes |
| CN102820512A (en) * | 2012-08-30 | 2012-12-12 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic resonance unit structures and method for realizing specific terahertz mediums |
| CN103346406A (en) * | 2013-05-20 | 2013-10-09 | 电子科技大学 | High electron mobility transistor-based terahertz wave spatial external modulator |
-
2013
- 2013-11-08 CN CN201310554387.0A patent/CN104465342B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080203399A1 (en) * | 2006-09-18 | 2008-08-28 | Spencer Michael G | Polarization doped transistor channels in sic heteropolytypes |
| CN102820512A (en) * | 2012-08-30 | 2012-12-12 | 中国科学院上海微系统与信息技术研究所 | Electromagnetic resonance unit structures and method for realizing specific terahertz mediums |
| CN103346406A (en) * | 2013-05-20 | 2013-10-09 | 电子科技大学 | High electron mobility transistor-based terahertz wave spatial external modulator |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301804B (en) * | 2015-10-20 | 2017-10-20 | 南京大学 | New Terahertz superconduction modulator and modulator approach |
| CN105301804A (en) * | 2015-10-20 | 2016-02-03 | 南京大学 | Novel terahertz superconductive modulator and modulation method |
| CN105372850A (en) * | 2015-12-07 | 2016-03-02 | 电子科技大学 | Terahertz wave rapid modulator based on coplanar waveguide combining transistor |
| CN105372850B (en) * | 2015-12-07 | 2018-02-13 | 电子科技大学 | A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe |
| CN105549228A (en) * | 2015-12-21 | 2016-05-04 | 电子科技大学 | Terahertz space phase modulator based on high electron mobility transistor |
| CN105610410A (en) * | 2015-12-21 | 2016-05-25 | 电子科技大学 | Terahertz multiband modulator based on high electron mobility transistor |
| CN105610410B (en) * | 2015-12-21 | 2018-04-06 | 电子科技大学 | A kind of Terahertz multiband modulator based on HEMT |
| CN105652475A (en) * | 2016-01-14 | 2016-06-08 | 电子科技大学 | THz wave rapid modulator based on coplanar waveguide combined transistor |
| CN105652475B (en) * | 2016-01-14 | 2018-06-19 | 电子科技大学 | A kind of terahertz wave modulator based on co-planar waveguide binding crystal pipe |
| CN106405883A (en) * | 2016-04-12 | 2017-02-15 | 电子科技大学 | Frequency point-adjustable THz wave modulator based on transistor with high electronic mobility |
| CN107144985A (en) * | 2017-06-21 | 2017-09-08 | 电子科技大学 | A kind of netted automatically controlled terahertz wave modulator of HEMT arrays being dislocatedly distributed |
| CN108417589A (en) * | 2018-01-16 | 2018-08-17 | 电子科技大学 | Based on high electron mobility transistor wavefront fast scan imaging modulator |
| CN109633772A (en) * | 2018-12-26 | 2019-04-16 | 苏州耶拿微电子有限公司 | The passive superconduction Terahertz human body security check system of 110GHz |
| CN110444889A (en) * | 2019-06-27 | 2019-11-12 | 电子科技大学 | The super surface phase changer of the automatically controlled resonance suitching type of Terahertz |
| CN110445553A (en) * | 2019-08-27 | 2019-11-12 | 桂林电子科技大学 | A kind of 2 code devices of voltage-controlled Terahertz and method |
| CN111884593A (en) * | 2020-08-04 | 2020-11-03 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN111884593B (en) * | 2020-08-04 | 2021-04-20 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN112636002A (en) * | 2020-12-18 | 2021-04-09 | 北京航空航天大学青岛研究院 | Tunable metamaterial device based on TFT (thin film transistor) process and manufacturing method thereof |
| CN112636002B (en) * | 2020-12-18 | 2022-02-01 | 北京航空航天大学青岛研究院 | Tunable metamaterial device based on TFT (thin film transistor) process and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104465342B (en) | 2017-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104465342A (en) | Terahertz blueshift modulator based on electric-control transistor and preparation method | |
| CN103346406B (en) | High electron mobility transistor-based terahertz wave spatial external modulator | |
| US11442295B2 (en) | High-electron mobility transistor terahertz wave modulator loaded in waveguide | |
| US9865692B2 (en) | Spatial terahertz wave phase modulator based on high electron mobility transistor | |
| CN107144985B (en) | A kind of netted automatically controlled terahertz wave modulator of HEMT array being dislocatedly distributed | |
| CN105549228B (en) | One kind is based on high electron mobility transistor Terahertz Spatial Phase Modulator | |
| CN105610410B (en) | A kind of Terahertz multiband modulator based on HEMT | |
| CN110444889B (en) | Terahertz electric control resonance switching type super-surface phase shift device | |
| US10333468B2 (en) | Terahertz wave fast modulator based on coplanar waveguide combining with transistor | |
| CN109856820B (en) | On-chip terahertz wave amplitude modulator based on fin line nested artificial microstructure | |
| CN108061981A (en) | Terahertz modulator and preparation method thereof | |
| CN105549227A (en) | Terahertz wave space external modulator based on GaN semiconductor material heterojunction field-effect transistor structure | |
| Gonzalo et al. | Improved patch antenna performance by using photonic bandgap substrates | |
| CN105372850A (en) | Terahertz wave rapid modulator based on coplanar waveguide combining transistor | |
| CN105652475A (en) | THz wave rapid modulator based on coplanar waveguide combined transistor | |
| US11822162B2 (en) | Wideband terahertz modulator based on gradual openings | |
| CN113253489A (en) | Terahertz multichannel modulator and preparation method thereof | |
| CN107340613A (en) | A kind of terahertz wave modulator of microstrip line loading HEMT nested structures | |
| CN116259980A (en) | Terahertz electric control composite resonance reconfigurable intelligent surface | |
| CN114300820B (en) | C-type ring coupling-based parallel topology on-chip super-structure terahertz switch | |
| CN109557689A (en) | One kind being based on high electron mobility transistor Terahertz Spatial Phase Modulator | |
| CN203800171U (en) | Mutual coupling removing antenna array based on left-handed material | |
| CN212991103U (en) | Microwave emitter | |
| Zhao et al. | THz modulators based on the active GaN-HEMT metasurface | |
| Zeng et al. | High-precision digital terahertz phase manipulation within a multichannel field perturbation coding 2DEG meta-chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |