CN105372850B - A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe - Google Patents
A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe Download PDFInfo
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- CN105372850B CN105372850B CN201510894480.5A CN201510894480A CN105372850B CN 105372850 B CN105372850 B CN 105372850B CN 201510894480 A CN201510894480 A CN 201510894480A CN 105372850 B CN105372850 B CN 105372850B
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- planar waveguide
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe of the disclosure of the invention, belongs to function solenoid device arts, and emphasis is directed to the quick dynamic function device of terahertz wave band.THz wave is imported by straight wave guide cavity, then the core transistor junction for THz wave being coupled to this device by probe structure is closed in the structure of co-planar waveguide (CPW), and the structure is made up of the nested artificial micro-structure array structure of the outstanding transistor added between the suspended coplanar waveguide that three wires combination Semiconductor substrates are formed and co-planar waveguide adjacent metal transmission belt.Transmission characteristic of the THz wave in CPW is changed by the break-make of controlling transistor array, so as to realize the fast amplitude modulation to THz wave, finally again transferred out the THz after modulation by probe waveguiding structure.With small volume, process the advantages of simple, modulation rate is fast.
Description
Technical field
The invention belongs to function solenoid device arts, and emphasis is directed to the quick dynamic function device of terahertz wave band,
Device etc. is shifted to for terahertz wave modulator, THz wave switch, Terahertz.
Background technology
THz wave refers to frequency in 0.1-10THz (1THz=1012Hz the electromagnetic wave in the range of), in macroelectronics
It is unique resource of frequency range still in exploitation in electromagnetic spectrum to microcosmic photonic propulsion transitional region.It is between technology relative maturity
Microwave and millimeter wave and infrared visible region between, there is unique electromagnetic property；THz wave physics, electronic information,
The field tool such as chemistry, life science, material science, astronomy, air and environmental monitoring, national security and anti-terrorism, communication radar
There is epochmaking application, be one of scientific and technical important foundation of information industry of future generation, to national economy and national defense construction
It is significant.
Terahertz radio communication has been now subjected to countries in the world as one of most important application direction in Terahertz field
Pay attention to.Terahertz communication system has unique advantage compared with microwave communication, fiber optic communication, light wireless communication.Such as compared to
Microwave communication, THz, which is applied to this, can provide bigger bandwidth, higher transmission speed, in addition, the size of antenna will significantly subtract
It is small, it is suitable for intersatellite communication；THz can provide multi-channel data transmission, and its sphere of action is more than sighting distance Infrared Transmission；Relative to nothing
Linear light communicates, and the loss of wireless light communication derives from the scattering and absorption of cloud, rain, dust etc., and frequency is higher, and scattering is stronger, and
Compared to light wave, THz KPT Scatter is much smaller, therefore THz communications can be used as the back-up system of optical communication link, dense
Cigarette, closely broadband connections is still kept under Sand Dust Environment.Terahertz wireless communication technology is constantly subjected to the height of Western power
Pay attention to, such as inter-satellite interstellar communication, short distance atmospheric communication, short distance terrestrial wireless LAN etc..
And as one of core technology the most key in Terahertz communication system, THz wave dynamic function device-too
Nowadays hertz external modulator turns into the emphasis in Terahertz scientific and technical research field.At present in the world by the way of quasi-optical
Terahertz external modulator is studied, but this mode Insertion Loss is big, cellular construction is more, modulation rate is difficult to improve, therefore
So far, all fail to realize to the fast modulation for the THz wave propagated in space.
In present information and the communication technology, Planar integration microwave circuit serves huge effect.Especially nearest
In 25 years, with the development as the modern microwave transistor such as FET and hetero-field effect pipe, monolithic integrated microwave circuit obtains
To develop rapidly.Co-planar waveguide is counted as the deformation of slot line structure as the important microstrip structure in microwave circuit, in slot structure
Centre adds signal wire.The mode of electromagnetic wave walked in groove is Quasi-TEM mode, supports the quasi- TEM moulds of odd or even, and odd even form depends on
Electric field between two grooves is in the same direction or reverse.Due to co-planar waveguide signal wire and it is located at grade, without in medium
Punched on plate, it is very convenient for design, processing device and circuit, it is widely used in into circuit (MICs), monolithic millimeter wave integrates
Circuit (MMIC), the wave filter based on co-planar waveguide, phase shifter, antenna and based on the MEMS of co-planar waveguide by co-planar waveguide knot
The high pass section to THz wave can be realized to reach the height to THz wave first for Terahertz modulator by closing transistor array
It is few comprising array element number in effect modulation, the Insertion Loss I reduction THz wave power attenuation of next device, device, can be effective
Control circuit time constant regulates and controls at a high speed THz wave to realize.
The content of the invention
It is quick to THz wave by the realization of applied voltage signal the technical problem to be solved by the invention is to provide one kind
The modulator of dynamic regulation, efficient, fast amplitude effectively can be carried out to THz wave and modulated.
The present invention solves the technical scheme that the technical problem uses：THz wave is imported by straight wave guide cavity, so
THz wave is coupled to the structure of the core transistor junction conjunction co-planar waveguide (CPW) of this device by probe structure afterwards
On, the structure is transmitted by the suspended coplanar waveguide that three wires combination Semiconductor substrates are formed and co-planar waveguide adjacent metal
The outstanding transistor nesting artificial micro-structure array structure composition added between band.Changed too by the break-make of controlling transistor array
Transmission characteristic of the Hertz wave in CPW, so as to realize the fast amplitude modulation to THz wave, finally pass through probe-waveguide again
Structure transfers out the THz after modulation.Because a kind of THz wave based on co-planar waveguide binding crystal pipe of the present invention is quick
Modulator, including：Input straight wave guide, co-planar waveguide, straight wave guide output；The co-planar waveguide includes substrate and on substrate
Feeder line, feeder line include input section, propagation segment, deferent segment；The propagation segment includes：Central feeder line, centrally located feeder line both sides
Resonant feeder；The input section of feeder line is arranged in input straight wave guide, deferent segment is arranged in straight wave guide output；It is characterized in that
The external voltage input line of central feeder line of co-planar waveguide, at least one transistor is set between resonant feeder and central feeder line, led to
Cross the break-make of external voltage controlling transistor.
Further, 6 transistors are set between the resonant feeder and central feeder line, wherein 3 centrally located feeder lines
The same side, the opposite side of remaining 3 centrally located feeder line.
Further, the transistor is diode or triode or HEMT.
Further, the co-planar waveguide substrate is semi-conducting material.
Further, the co-planar waveguide substrate is AsGa or AlGaN or SiC.
The invention has the advantages that (1), place the transistor in co-planar waveguide, and with resonance metal cellular construction phase
With reference to modulation feature frequency THz wave, the loss of THz wave can be effectively controlled, realizes THz wave in the same of High Speed Modulation
When Insertion Loss it is low.(2) structure of transistor combination resonant element can only place a few in co-planar waveguide even 1 can
Realize to Terahertz wave modulation, therefore its circuit time constant (RC constants) is minimum, modulation rate can reach more than 10GHz,
Modulation rate is substantially improved.(3) resonant element characteristic is changed by transistor so as to change co-planar waveguide to specific frequency terahertz
The hereby transmission characteristic of ripple, the modulation efficiency (modulation depth) of the modulation device can be substantially improved in this, can be achieved more than 95%
Modulation depth.(4), standard machinery manufacturing process is passed through for the function element of terahertz wave band, the design of stereochemical structure
It is difficult to, and what is utilized in the present invention is a kind of two-dimension plane structure, can be realized by microfabrication means, technical maturity,
It is easy to make.(5), the present invention is operated without additional illumination, temperature equal excitation by automatically controlled, and this is for the device
Miniaturization, practical and yieldization have very big advantage.(6), can, by changing the structural parameters (length and width etc.) of modulating unit
Different size of terahertz wave beam is controlled, flexible design, convenient customization.(7), the present invention designed by resonance structure with
Common split-ring resonator is different, and the break-make of transistor is that the change of THz wave configured transmission can be achieved between capacitance sheet,
Final to realize that wideband is modulated, this development tool to terahertz wave band wide band modulation technology has very great help.(8), pin of the present invention
Terahertz electromagnetic wave is propagated to waveguide, is operable with normal temperature, normal pressure, non-vacuum condition, is easy to encapsulation, convenient use.
Brief description of the drawings
Fig. 1 is that the overall structure of CPW modulators looks down floor map.
Fig. 2 is that CPW modulator resonant element structures look down floor map.
Fig. 3 is the distribution map of the electric field under additional positive direction voltage (connection) state.
Fig. 4 is the distribution map of the electric field under additional negative direction voltage (disconnection) state.
Fig. 5 is S21 parameter comparison of the CPW modulators under different conditions.
Embodiment
The present invention propose it is a kind of transistor AND gate transmission line structure is combined a kind of waveguide-co-planar waveguide to be formed-
Waveguiding structure carries out the design of dynamic modulation to realize to the THz wave propagated in space, and passes through simulation calculation and reality
Checking illustrates that this is a kind of simple in construction, easy to process, and has higher modulation depth Terahertz fast modulation device.
The present invention includes:Input straight wave guide (1), waveguide input probe structure (2), applied voltage input (3), suspension are coplanar
Waveguide binding crystal pipe nesting artificial micro-structure array (4), waveguide output probe structure (5), straight wave guide output (6).
The suspended coplanar waveguide binding crystal pipe nesting artificial micro-structure array structure may include that at least one modulation is single
Member, the modulating unit include central feeder line by single transistor combination resonant element structure composition, the resonant element structure
Formed with the resonant feeder of centrally located feeder line both sides, and two longitudinal metal short-term bars, wherein longitudinal metal short-term bar
It is connected with the electrode of transistor；Transistor (9) can be diode, triode, HEMT.
Positive voltage loading pole is connected by central metal line with external modulation voltage, by change external voltage come
Realize the break-make control of transistor.
In above-mentioned technical proposal, the substrate base can be AsGa or AlGaN or SiC；Metal electrode typically using Ti,
Al, Ni, Au also can use the metal of other characteristic closes to replace.
The modulator is to realize that dynamic amplitude is modulated to the THz wave of spatial by the break-make of transistor.Specifically
For：When the additional automatically controlled inter-transistor for disconnecting transistor, connecting suspended coplanar waveguide both sides bonding jumper and intermetallic metal bar
Off state is also at resonant element structural openings, in this case metal wire structure phase symmetrical above and below inside resonant element
Mutually work independently, form dipole resonance pattern.At this moment the THz wave electromagnetic energy propagated is concentrated mainly on opening for resonance structure
At mouthful, the transmission along metal wire can not be carried out again.As can see from Figure 3.When additional automatically controlled so that what transistor connected
When, it is located at connection status at resonant element structure split shed, now suspended coplanar waveguide both sides bonding jumper and intermetallic metal bar
Also the mutual conduction because of the connection of diode, in the case resonant element due to opening conducting can not be directed in assigned work
Frequency nearby carries out resonance, therefore THz wave can be well suspended coplanar waveguide metal wire in a manner of being mutually coupled
Quick transmission, as shown in Figure 4.Therefore by applied voltage signal can the break-make of quick controlling transistor structure realized with this to this
Electric-field intensity fast modulation in resonance structure, so as to which the mode for realizing automatically controlled is quickly modulated to THz wave.Such as Fig. 5 institutes
Show, when Controlled Crystal pipe is logical, propagation coefficient and propagation coefficient when disconnecting, have more than 40dB amplitude regulation and control, show the tune
Device processed efficiently can be modulated to THz wave, and can change working frequency by design structure, and this schematic diagram is
Working frequency 0.34THz regulation and control.
Above-mentioned THz wave fast modulator demonstrates its feasibility through the emulation of 3 D electromagnetic simulation softward, and Fig. 3, Fig. 4 are
Electromagnetic Simulation the transmissivity spectrogram of THz wave and resonance model results figure in the case of controlling transistor switching.As a result show,
Applied voltage controlling transistor break-make so that Electric Field Distribution of the THz wave in the device in transmitting procedure changes, from
And THz wave is caused to occur significantly to change the percent of pass for thus causing THz wave by field strength after the device and become from passing through
In order to block or be become by blocking by being modulated with this to the amplitude of THz wave.
State when being disconnected in Fig. 5 for simulated transistor, now analyzed from Fig. 3 and Fig. 4 it can be seen that connection suspension is coplanar
Be also at off state at the inter-transistor resonant element structural openings of waveguide both sides bonding jumper and intermetallic metal bar, now from
Analysis on Fig. 4 is it can be seen that form the pattern of the respective independent similar dipole in top and the bottom, field is concentrated mainly on resonance
The center of unit, can see THz wave by transmission coefficient figure can not be by the device.When controlling transistor conducting
State, now it can see from Fig. 3 and Fig. 4, field can quickly be transmitted from structure in a manner of being mutually coupled, now terahertz
Hereby ripple is also at conducting state.The result proves that the modulator can efficiently be modulated to THz wave, in addition transistor
With the break-make speed being exceedingly fast, therefore the device can carry out fast modulation to THz wave.Therefore described one kind is based on coplanar ripple
The THz wave fast modulator for leading binding crystal pipe is a kind of electrically controlled high-efficiency for working in THz frequency ranges, High Speed Modulation device.This
Design and fabrication for THz function elements in future provides good thinking and direction.
Claims (5)
1. a kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe, including：Input straight wave guide, coplanar ripple
Lead, straight wave guide output；The co-planar waveguide includes substrate and the feeder line on substrate, and feeder line includes input section, propagation segment, defeated
Go out section；The propagation segment includes：Central feeder line, the resonant feeder of centrally located feeder line both sides；The input section of feeder line is arranged at
Input in straight wave guide, deferent segment is arranged in straight wave guide output；It is characterized in that the external voltage of the central feeder line of co-planar waveguide
Input line, at least one transistor is set between resonant feeder and central feeder line, passes through the break-make of external voltage controlling transistor.
2. a kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe as claimed in claim 1, its feature
It is to set 6 transistors between the resonant feeder and central feeder line, wherein the same side of 3 centrally located feeder lines, remaining 3
The opposite side of individual centrally located feeder line.
3. a kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe as claimed in claim 1, its feature
It is diode or triode or HEMT to be the transistor.
4. a kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe as claimed in claim 1, its feature
It is semi-conducting material to be the co-planar waveguide substrate.
5. a kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe as claimed in claim 4, its feature
It is that further the co-planar waveguide substrate is AsGa or AlGaN or SiC.
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| CN201510894480.5A CN105372850B (en) | 2015-12-07 | 2015-12-07 | A kind of THz wave fast modulator based on co-planar waveguide binding crystal pipe |
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Families Citing this family (6)
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| CN107340613A (en) * | 2017-06-22 | 2017-11-10 | 电子科技大学 | A kind of terahertz wave modulator of microstrip line loading HEMT nested structures |
| CN109655970A (en) * | 2019-01-30 | 2019-04-19 | 电子科技大学 | A kind of integrated transition structure of Terahertz on piece |
| CN109991766B (en) * | 2019-04-29 | 2024-01-02 | 电子科技大学 | Terahertz wave modulator with high electron mobility transistor loaded in waveguide |
| CN110535007B (en) * | 2019-09-06 | 2021-02-05 | 电子科技大学 | On-chip terahertz wave amplitude modulator with fin line loaded resonant unit nested diodes |
| CN111934068A (en) * | 2020-07-24 | 2020-11-13 | 电子科技大学 | Terahertz dynamic phase modulator based on microstructure |
| CN114497950B (en) * | 2022-01-20 | 2022-07-29 | 电子科技大学 | Terahertz waveguide probe transition structure for higher-order mode suppression |
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