CN111244615A - Terahertz is integrated dipole antenna transition structure on piece now - Google Patents
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- 239000002184 metal Substances 0.000 claims abstract description 9
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- 238000012545 processing Methods 0.000 abstract description 3
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- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
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Abstract
The invention discloses an integrated dipole antenna transition structure on a terahertz chip, which comprises a rectangular terahertz chip, wherein the front surface of the rectangular terahertz chip is provided with a dipole antenna topological structure, and the back surface of the rectangular terahertz chip is provided with a metal layer; this simple structure, processing convenience extend the bandwidth through adding dipole antenna resonance minor matters at standard dipole antenna end, add the dipole antenna disc in order to improve electromagnetic energy coupling efficiency at dipole antenna resonance minor matters end, can make standard terahertz waveguide's the input electromagnetic energy as much as possible couple to rectangle terahertz chip circuit through dipole antenna topological structure, realize the terahertz chip packaging technique of low-loss high performance.
Description
Technical Field
The invention relates to the technical field of terahertz devices, in particular to a transition structure of an integrated dipole antenna on a terahertz chip.
Background
Terahertz waves (THz) generally refer to electromagnetic waves with the frequency within the range of 0.1-10 THz (the wavelength is 3000-30 um), and the frequency band is just in the spectrum gap of the electromagnetic spectrum, because the low-frequency band of the terahertz waves can be researched by using a research method in the millimeter wave field, and the high-frequency band of the terahertz waves is overlapped with an infrared region, and the research method in the photonics field can be used for reference. Due to the special position of the terahertz wave, the terahertz wave has the advantages of microwave and light wave, and has a series of special properties different from other electromagnetic radiation, so that the terahertz wave has great scientific value and wide application prospect in object imaging, environment monitoring, radio astronomy, broadband mobile communication, particularly in the military fields of satellite communication, military radar and the like.
Because terahertz wave frequency is higher, it is extremely sensitive to environmental size, and it is extremely important to reduce the loss generated by terahertz wave in the transmission process. The terahertz chip is a planar transmission structure, and the terahertz chip package is generally a waveguide package, so that energy conversion between the waveguide and the chip needs to be realized, namely energy transition research between the chip and the waveguide is performed.
Disclosure of Invention
The invention aims to provide a transition structure of an integrated dipole antenna on a terahertz chip, which can be applied to the field of terahertz chip packaging, can convert energy between a chip and a waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, and can simplify the module manufacturing process, and has the advantages of high assembly consistency, simple structure, small volume and convenient processing.
The embodiment of the invention is realized by the following steps:
a transition structure of an integrated dipole antenna on a terahertz chip comprises a rectangular terahertz chip, wherein the front surface of the rectangular terahertz chip is provided with a dipole antenna topological structure, the back surface of the rectangular terahertz chip is provided with a metal layer, the rectangular terahertz chip is connected with a standard terahertz waveguide, the rectangular terahertz chip is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip, the dipole antenna topological structure comprises a coplanar waveguide central conduction band, a coplanar waveguide grounding layer, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch section and a dipole antenna disc which are sequentially arranged from one end of the rectangular terahertz chip to one end connected with the standard terahertz waveguide, the dipole antenna transitional section, the standard dipole antenna, the dipole antenna resonance branch section and the dipole antenna disc are integrally formed and form a symmetrical antenna structure, and the antenna structure completely extends into the standard, the main circuit of the grounding coplanar waveguide is symmetrically arranged on the central conduction band of the coplanar waveguide and the coplanar waveguide grounding layers at two sides of the antenna structure; the coplanar waveguide central conduction band extends to a dipole transition section in the middle from one end of the rectangular terahertz chip, two dipole antenna transition sections are arranged in parallel and are arranged at intervals, one dipole transition section is connected with the coplanar waveguide central conduction band and is arranged in the extending direction of the coplanar waveguide central conduction band towards the standard terahertz waveguide, the other dipole transition section is connected with the coplanar waveguide connecting layer, the other ends of the two dipole transition sections are respectively connected with one standard dipole antenna, the standard dipole antennas extend towards two sides from the dipole transition sections and are connected to dipole antenna resonance branch sections, the standard dipole antennas are perpendicular to the coplanar waveguide central conduction band, the dipole antenna resonance branch sections are parallel to the coplanar waveguide central conduction band, and the tail ends of the dipole antenna resonance branch sections are connected with a dipole antenna disc.
In a preferred embodiment of the present invention, the electromagnetic energy coupling area of the antenna topology is increased by using a circular dipole antenna disk to improve the coupling efficiency of the rectangular terahertz waveguide-dipole antenna topology, and the circular dipole antenna disk is circular and has a diameter greater than the widths of the dipole antenna transition section, the standard dipole antenna and the dipole antenna resonance branch.
In a preferred embodiment of the invention, the antenna topology adjusts the coupling center frequency point of the dipole antenna topology by adjusting the extension length of the dipole antenna resonance branch along the direction parallel to the center conduction band of the planar waveguide, and expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topology, so as to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
In a preferred embodiment of the invention, the antenna topology structure expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topology structure by adjusting the length of the standard dipole antenna and adjusting the coupling center frequency point of the dipole antenna topology structure, so as to realize electromagnetic energy coupling between the rectangular terahertz chip and the standard terahertz waveguide.
In the preferred embodiment of the present invention, the length and width of the transition section of the dipole antenna, the length and width of the standard dipole antenna, the length and width and position of the dipole resonance branch, and the diameter of the dipole antenna disk are adjusted, so that electromagnetic energy input by the standard terahertz waveguide can be coupled to the dipole antenna topology with high performance.
In a preferred embodiment of the present invention, the diameter of the dipole antenna disk is 55 to 65 um.
In a preferred embodiment of the present invention, the length of the dipole resonant branch is 55 to 65 um.
In a preferred embodiment of the present invention, the length of the standard dipole antenna is 105 to 115 um.
In a preferred embodiment of the invention, the rectangular terahertz chip is provided with a plurality of through holes which are symmetrical with respect to the coplanar waveguide central conduction band, and the coplanar waveguide ground layer is connected with the metal layer on the back surface of the rectangular terahertz chip through the through holes.
In a preferred embodiment of the present invention, the rectangular terahertz chip employs an InP substrate.
The invention has the beneficial effects that:
according to the invention, a coplanar waveguide center conduction band, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch section and a dipole antenna disc are sequentially arranged on a rectangular terahertz chip to form a dipole antenna topological structure, wherein the antenna transition section, the standard dipole antenna, the dipole antenna resonance branch section and the dipole antenna disc form an integrated antenna structure which is symmetrically arranged, a coupling center frequency point is adjusted through the standard dipole antenna and the dipole antenna resonance branch section, the coupling frequency bandwidth is expanded, the electromagnetic energy coupling of the rectangular terahertz chip and a standard terahertz waveguide is realized, the electromagnetic energy coupling area is increased through the dipole antenna disc, and the coupling efficiency of the terahertz waveguide-dipole antenna topological structure is improved; the structure can be applied to the field of terahertz chip packaging, can convert energy of the chip and the waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, can simplify the module manufacturing process, and is high in assembly consistency, simple in structure, small in size and convenient to process.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope.
FIG. 1 is a schematic diagram of a transition structure of an integrated dipole antenna on a terahertz chip according to the present invention;
FIG. 2 is a cross-sectional view A-A of FIG. 1 of the transition structure of the integrated dipole antenna on a THz chip of the present invention;
FIG. 3 is a schematic diagram of an on-chip integrated dipole antenna topology when a preferred embodiment of the present invention is applied to the G-band;
FIG. 4 is a diagram of simulation results of S11 and S21 when a preferred embodiment of the present invention is applied to the G band;
icon: 1-coplanar waveguide central conduction band; 2-coplanar waveguide ground plane; a 3-dipole antenna transition section; 4-standard dipole antenna; 5-dipole antenna resonant stubs; a 6-dipole antenna disk; 101-a rectangular terahertz chip; 102-standard terahertz waveguide; a 1011-dipole antenna topology; 1012-InP substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
First embodiment
Referring to fig. 1, the present embodiment provides an integrated dipole antenna transition structure on a thz chip, which is a preferred embodiment and is applied to a G-band, and includes a rectangular thz chip 101 based on a dipole antenna topology and connected to a standard thz waveguide 102, the rectangular thz chip 101 is based on a 50um InP substrate 1012 and is rectangular, the rectangular thz chip 101 is placed in a rectangular metal cavity having the same width as the rectangular thz chip 101, the rectangular thz chip 101 is placed in the center of a wide side of the standard thz waveguide 102 and is perpendicular to an H-plane of the standard thz waveguide 102 (an E-plane of the waveguide generally refers to a directional diagram section parallel to an electric field direction, an H-plane of the waveguide refers to a directional diagram section parallel to a magnetic field direction), the front surface of the rectangular thz chip 101 is provided with a dipole antenna topology 1011 and the back, the dipole antenna topological structure 1011 comprises a coplanar waveguide central conduction band 1, a coplanar waveguide grounding layer 2, a dipole antenna transition section 3, a standard dipole antenna 4, a dipole antenna resonant branch 5 and a dipole antenna disc 6 which are sequentially arranged from one end of the rectangular terahertz chip 101 to one end connected with the standard terahertz waveguide 102; the dipole antenna disc 6 is located at the tail end of the dipole antenna topological structure 1011 and connected with the dipole antenna resonant branch 5, the electromagnetic energy coupling area is increased through the dipole antenna disc 6, the coupling efficiency of the standard terahertz waveguide 102-dipole antenna topological structure 1011 is improved, the coupling center frequency point is adjusted through the standard dipole antenna 4 and the dipole antenna resonant branch 5, the coupling frequency bandwidth is expanded, and electromagnetic energy coupling of the rectangular terahertz chip 101 and the standard terahertz waveguide 102 is achieved.
Referring to fig. 2 and 3, a coplanar waveguide central conduction band 1, two coplanar waveguide ground planes 2, two dipole antenna transition sections 3, two standard dipole antennas 4, two dipole antenna resonance branches 5, and two dipole antenna disks 6 are sequentially disposed from one end of a rectangular terahertz chip 101 to one end connected to a standard terahertz waveguide 102, wherein the coplanar waveguide ground planes 2, the dipole antenna transition sections 3, the standard dipole antennas 4, the dipole antenna resonance branches 5, and the dipole antenna disks 6 are symmetrically disposed, and electromagnetic energy input by the standard terahertz waveguide 102 can be coupled to a dipole antenna topological structure 1011 with high performance by adjusting the length and width of the dipole antenna transition sections 3, the length and width of the standard dipole antennas 4, the length and position of the dipole antenna branches, and the diameter of the dipole antenna disks 6, through the optimized parameters, in this embodiment, the width of the rectangular terahertz chip 101 is 970um, the width of the coplanar waveguide central conduction band 1 is 16um, the gap between the coplanar waveguide central conduction band 1 and the coplanar waveguide grounding layer 2 is 14um, the length of the dipole antenna transition section 3 is 150um, the width of the dipole antenna transition section is 16um, the length of the standard dipole antenna 4 is 110um, the width of the standard dipole antenna 4 is 16um, the length of the dipole resonance branch section is 60um, the width of the dipole antenna is 16um, the diameter of the dipole antenna disk 6 is 60um, the dipole antenna transition section 3, the standard dipole antenna 4, the dipole antenna resonance branch section 5 and the dipole antenna disk 6 are integrally formed and form a symmetrical antenna structure, the antenna structure completely extends into the standard terahertz waveguide 102, the grounding coplanar waveguide main circuit is symmetrically arranged on the coplanar waveguide central conduction band 1 and the coplanar waveguide grounding layer 2 on both sides of the antenna structure, the rectangular terahertz chip 101 is provided with a plurality of through holes which are symmetrical about the coplanar waveguide central conduction band 1, intervals are arranged between every two adjacent through holes, the diameter of each through hole is 25 micrometers, the interval is 60 micrometers, the through holes are located on the coplanar waveguide grounding layer 2, the through holes are distributed along two sides of the rectangular terahertz chip 101 connected with the standard terahertz waveguide 102 and two sides of the coplanar waveguide central conduction band 1 in the embodiment and extend to two sides of the rectangular terahertz chip 101 along one end of the coplanar waveguide central conduction band 1, and the coplanar waveguide grounding layer 2 is connected with a metal layer on the back of the rectangular terahertz chip 101 through the through holes; the coplanar waveguide central conduction band 1 extends from one end of the rectangular terahertz chip 101 to a dipole transition section positioned in the middle of the rectangular terahertz chip 101, two sections of dipole antenna transition sections 3 are arranged in parallel and are arranged at intervals, one section of the dipole transition section is connected with the coplanar waveguide central conduction band and is arranged in the extending direction of the coplanar waveguide central conduction band 1 to the standard terahertz waveguide 102, the other section of the dipole transition section is connected with the coplanar waveguide junction layer 2, the other ends of the two sections of the dipole transition sections are respectively connected with a standard dipole antenna 4, the standard dipole antenna 4 extends from the dipole transition section to the two sides of the rectangular terahertz chip 101 and is connected to a dipole antenna resonance branch section 5, the standard dipole antenna 4 is perpendicular to the coplanar waveguide central conduction band 1, the dipole antenna resonance branch section 5 is parallel to the coplanar waveguide central conduction band 1, and the tail end of the dipole antenna resonance branch section 5 is connected with, the dipole antenna disc 6 is circular, and the diameter of the dipole antenna disc 6 is larger than the widths of the dipole antenna transition section 3, the standard dipole antenna 4 and the dipole antenna resonance branch section 5.
Referring to fig. 4, which is a simulation result diagram of S11 and S21 when the present embodiment is applied to the G band, it can be seen that:
the standard dipole antenna 4 and the dipole antenna resonance branch 5 determine two electromagnetic energy coupling center frequency points of the dipole antenna topological structure 1011, the two electromagnetic energy coupling center frequency points are superposed to obtain a final electromagnetic energy coupling frequency band, the coupling frequency bandwidth of the standard terahertz waveguide 102 and the dipole antenna topological structure 1011 is expanded by respectively adjusting the lengths of the standard dipole antenna 4 and the dipole antenna resonance branch 5, and the electromagnetic energy coupling of the rectangular terahertz chip 101 and the standard terahertz waveguide 102 can be realized in a wide frequency band. The antenna topological structure increases the electromagnetic energy coupling area through the dipole antenna disc 6, improves the coupling efficiency of the standard terahertz waveguide 102-dipole antenna topological structure 1011, and simulation shows that when the diameter of the dipole antenna disc 6 is 60um, the antenna transition structure of the embodiment has the optimal electromagnetic energy coupling efficiency.
According to the analysis and optimization data, the simulation result shown in fig. 4 is obtained: in the frequency range of 180-260 GHz, the insertion loss is better than 0.76dB, and the echo is better than 14 dB. The method can be applied to the field of packaging of the G-band terahertz chip, and has the performances of low loss (less than 0.76dB), ultra wide band (more than 36%), simple structure and convenience in processing.
In summary, the rectangular terahertz chip, the standard terahertz waveguide, the standard dipole antenna, the dipole antenna resonant branch and the dipole antenna disc are sequentially arranged on the rectangular terahertz chip to form a dipole antenna topological structure, the antenna structure formed by the antenna transition section, the standard dipole antenna, the dipole antenna resonant branch and the dipole antenna disc is integrally formed and symmetrically arranged, the standard dipole antenna and the dipole antenna resonant branch are used for adjusting a coupling center frequency point, expanding the coupling frequency bandwidth, realizing electromagnetic energy coupling between the rectangular terahertz chip and the standard terahertz waveguide, and increasing the electromagnetic energy coupling area and improving the coupling efficiency of the terahertz waveguide-dipole antenna topological structure; the structure can be applied to the field of terahertz chip packaging, can convert energy of the chip and the waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, can simplify the module manufacturing process, and is high in assembly consistency, simple in structure, small in size and convenient to process.
This description describes examples of embodiments of the invention, and is not intended to illustrate and describe all possible forms of the invention. It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (10)
1. A transition structure of an integrated dipole antenna on a terahertz chip is characterized by comprising a rectangular terahertz chip, wherein the front surface of the rectangular terahertz chip is provided with a dipole antenna topological structure, the back surface of the rectangular terahertz chip is provided with a metal layer, the rectangular terahertz chip is connected with a standard terahertz waveguide, the rectangular terahertz chip is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip, the dipole antenna topological structure comprises a coplanar waveguide central conduction band, a coplanar waveguide grounding layer, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch section and a dipole antenna disc which are sequentially arranged from one end of the rectangular terahertz chip to one end connected with the standard terahertz waveguide, the dipole antenna transition section, the standard dipole antenna, the dipole antenna resonance branch section and the dipole antenna disc are integrally formed to form a symmetrical antenna structure, and the antenna structure completely extends into the standard terahertz waveguide, the main circuit of the grounding coplanar waveguide is symmetrically arranged on the central conduction band of the coplanar waveguide and the coplanar waveguide grounding layers at two sides of the antenna structure; the central guide band of the coplanar waveguide extends to a dipole transition section in the middle from one end of the rectangular terahertz chip, the two dipole antenna transition sections are arranged in parallel and arranged at intervals, one dipole transition section is connected with the coplanar waveguide central band and arranged in the extending direction of the central guide band of the coplanar waveguide towards the standard terahertz waveguide, the other dipole transition section is connected with the coplanar waveguide ground layer, the other ends of the two dipole transition sections are respectively connected with a standard dipole antenna, the standard dipole antenna extends towards two sides from the dipole transition section and is connected to dipole antenna resonance branch sections, the standard dipole antenna is perpendicular to the central guide band of the coplanar waveguide, the dipole antenna resonance branch sections are parallel to the central guide band of the coplanar waveguide, and the tail ends of the dipole antenna resonance branch sections are connected with a dipole antenna disc.
2. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the antenna topology increases the electromagnetic energy coupling area and improves the coupling efficiency of the rectangular terahertz waveguide-dipole antenna topology by a dipole antenna disk, and the dipole antenna disk is circular and has a diameter larger than the width of the dipole antenna transition section, the standard dipole antenna and the dipole antenna resonant stub.
3. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the antenna topology structure adjusts the coupling center frequency point of the dipole antenna topology structure by adjusting the extension length of the dipole antenna resonance branch along the direction parallel to the center conduction band of the coplanar waveguide, and expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topology structure, so as to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
4. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the antenna topology structure expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topology structure by adjusting the length of the standard dipole antenna and adjusting the coupling center frequency point of the dipole antenna topology structure, so as to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
5. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the electromagnetic energy inputted by the standard terahertz waveguide can be coupled to the dipole antenna topology with high performance by adjusting the length and width of the transition section of the dipole antenna, the length and width of the standard dipole antenna, the length and width and position of the dipole resonance branch and the diameter of the dipole antenna disk.
6. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 5, wherein the diameter of the dipole antenna disk is 55-65 um.
7. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 5, wherein the length of the dipole resonance branch is 55-65 um.
8. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 5, wherein the length of the standard dipole antenna is 105-115 um.
9. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the rectangular terahertz chip is provided with a plurality of via holes symmetrical with respect to a central conduction band of the coplanar waveguide, and the coplanar waveguide ground layer is connected with the metal layer on the back of the rectangular terahertz chip through the via holes.
10. The transition structure of the integrated dipole antenna on the terahertz chip as claimed in claim 1, wherein the rectangular terahertz chip is an InP substrate.
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Cited By (2)
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| WO2023123720A1 (en) * | 2021-12-28 | 2023-07-06 | 深圳飞骧科技股份有限公司 | Cpw transition conversion apparatus suitable for submillimeter-wave frequency band |
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| XIAO-DONG DENG等: ""A D-band chip-to-waveguide-horn (CWH) antenna with 18.9 dBi gain using CMOS technology"", <2015 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2015)>, 27 July 2015 (2015-07-27) * |
| 胡明洋: ""三维集成60GHz片上天线设计"", 《万方硕士论文全文库》, 4 May 2016 (2016-05-04) * |
| 靳赛赛: ""基于InP的220GHz固态放大电路关键技术研究"", 《中国知网优秀硕士论文全文库信息科技辑》, no. 12, 15 December 2019 (2019-12-15) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284671A (en) * | 2021-12-02 | 2022-04-05 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| CN114284671B (en) * | 2021-12-02 | 2022-10-11 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| WO2023123720A1 (en) * | 2021-12-28 | 2023-07-06 | 深圳飞骧科技股份有限公司 | Cpw transition conversion apparatus suitable for submillimeter-wave frequency band |
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| CN111244615B (en) | 2024-03-29 |
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