CN111244615B - Terahertz on-chip integrated dipole antenna transition structure - Google Patents
Terahertz on-chip integrated dipole antenna transition structure Download PDFInfo
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- CN111244615B CN111244615B CN202010166232.XA CN202010166232A CN111244615B CN 111244615 B CN111244615 B CN 111244615B CN 202010166232 A CN202010166232 A CN 202010166232A CN 111244615 B CN111244615 B CN 111244615B
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- 230000007704 transition Effects 0.000 title claims abstract description 61
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- 238000010168 coupling process Methods 0.000 claims abstract description 31
- 238000005859 coupling reaction Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention discloses an integrated dipole antenna transition structure on a terahertz sheet, which comprises a rectangular terahertz chip, wherein the front surface of the rectangular terahertz chip is provided with a dipole antenna topological structure, the back surface of the rectangular terahertz chip is provided with a metal layer, the rectangular terahertz chip is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip, and the dipole antenna topological structure comprises a coplanar waveguide center conduction band, a coplanar waveguide grounding layer, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch knot and a dipole antenna disc; the terahertz chip packaging technology is simple in structure and convenient to process, bandwidth is expanded by adding the dipole antenna resonance branches at the tail ends of the standard dipole antennas, and the dipole antenna discs are added at the tail ends of the dipole antenna resonance branches so as to improve electromagnetic energy coupling efficiency, so that as much as possible of input electromagnetic energy of the standard terahertz waveguide can be coupled to the rectangular terahertz chip circuit through the dipole antenna topological structure, and the low-loss high-performance terahertz chip packaging technology is realized.
Description
Technical Field
The invention relates to the technical field of terahertz devices, in particular to a transition structure of an integrated dipole antenna on a terahertz chip.
Background
Terahertz waves (THz) generally refer to electromagnetic waves with frequencies in the range of 0.1-10 THz (with wavelengths of 3000-30 um), and the frequency band is just in a spectrum gap in the electromagnetic spectrum, because the terahertz low-frequency band can be researched by a research method in the millimeter wave field, and the terahertz high-frequency band overlaps with the infrared region and can be used for referencing the research method in the photonics field. Because of the special position, the terahertz wave has the advantages of microwaves and light waves, and also has a series of special properties different from other electromagnetic radiation, so that the terahertz wave has great scientific value and wide application prospect in the fields of object imaging, environment monitoring, radio astronomy, broadband mobile communication, especially in the military fields of satellite communication, military radar and the like.
Because terahertz wave frequency is high, it is very sensitive to environmental dimensions, and it is important to reduce the loss generated by terahertz waves in the transmission process. The terahertz chip is of a planar transmission structure, and the terahertz chip package is generally of a waveguide package, so that energy conversion between the waveguide and the chip is required to be realized, namely energy transition research between the chip and the waveguide is carried out.
Disclosure of Invention
The invention aims to provide a transition structure of an integrated dipole antenna on a terahertz chip, which can be applied to the field of terahertz chip packaging, is used for carrying out energy conversion between a chip and a waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, and can simplify the manufacturing flow of a module, and has the advantages of high assembly consistency, simple structure, small volume and convenient processing.
Embodiments of the present invention are implemented as follows:
the rectangular terahertz chip is connected with a standard terahertz waveguide, the rectangular terahertz chip is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip, the dipole antenna topological structure comprises a coplanar waveguide center conduction band, a coplanar waveguide grounding layer, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch and a dipole antenna disc which are sequentially arranged from one end of the rectangular terahertz chip to one end connected with the standard terahertz waveguide, the dipole antenna transition section, the standard dipole antenna, the dipole antenna resonance branch and the dipole antenna disc are integrally formed and form a symmetrical antenna structure, the antenna structure completely stretches into the standard terahertz waveguide, and a grounding coplanar waveguide main circuit is symmetrically arranged on the coplanar waveguide center conduction band and the coplanar waveguide grounding layers on two sides of the antenna structure; the coplanar waveguide center conduction band extends from one end of the rectangular terahertz chip to a dipole transition section in the middle of the rectangular terahertz chip, two dipole antenna transition sections are arranged in parallel and are arranged at intervals, one dipole transition section is connected with the coplanar waveguide center band and is arranged in the extending direction of the coplanar waveguide center conduction band to the standard terahertz waveguide, the other dipole transition section is connected with the coplanar waveguide ground layer, the other ends of the two dipole transition sections are respectively connected with a standard dipole antenna, the standard dipole antenna extends from the dipole transition section to two sides and is connected to dipole antenna resonance branches, the standard dipole antenna is perpendicular to the coplanar waveguide center conduction band, the dipole antenna resonance branches are parallel to the coplanar waveguide center conduction band, and the tail ends of the dipole antenna resonance branches are connected with a dipole antenna disc.
In a preferred embodiment of the present invention, the antenna topology structure increases the electromagnetic energy coupling area by using a dipole antenna disc, and improves the coupling efficiency of the rectangular terahertz waveguide-dipole antenna topology structure, wherein the dipole antenna disc is circular, and the diameter of the dipole antenna disc is larger than the widths of the dipole antenna transition section, the standard dipole antenna and the dipole antenna resonance branches.
In the preferred embodiment of the invention, the antenna topological structure adjusts the coupling center frequency point of the dipole antenna topological structure by adjusting the extension length of the dipole antenna resonance branches along the direction parallel to the conduction band of the surface waveguide center, and expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topological structure so as to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
In the preferred embodiment of the invention, the antenna topological structure adjusts the coupling center frequency point of the dipole antenna topological structure by adjusting the length of the standard dipole antenna, and expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topological structure so as to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
In the preferred embodiment of the invention, the electromagnetic energy input by the standard terahertz waveguide can be coupled to the topological structure of the dipole antenna in a high performance by adjusting the length and the width of the transition section of the dipole antenna, the length and the width of the standard dipole antenna, the length, the width and the position of the dipole resonance branches and the diameter of the disc of the dipole antenna.
In a preferred embodiment of the present invention, the diameter of the dipole antenna disc is 55-65 um.
In a preferred embodiment of the present invention, the length of the dipole resonance stub is 55-65 um.
In a preferred embodiment of the present invention, the length of the standard dipole antenna is 105-115 um.
In a preferred embodiment of the present invention, the rectangular terahertz chip is provided with a plurality of vias symmetrical with respect to a central conduction band of the coplanar waveguide, and the coplanar waveguide ground layer is connected with the metal layer on the back of the rectangular terahertz chip through the vias.
In a preferred embodiment of the present invention, the rectangular terahertz chip uses an InP substrate.
The beneficial effects of the invention are as follows:
according to the invention, a coplanar waveguide center conduction band, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch knot and a dipole antenna disc are sequentially arranged on a rectangular terahertz chip to form a dipole antenna topological structure, wherein the antenna transition section, the standard dipole antenna, the dipole antenna resonance branch knot and the dipole antenna disc form an integrated and symmetrical antenna structure, the coupling center frequency point is regulated through the standard dipole antenna and the dipole antenna resonance branch knot, the coupling frequency bandwidth is expanded, the electromagnetic energy coupling between the rectangular terahertz chip and the standard terahertz waveguide is realized, the electromagnetic energy coupling area is increased through the dipole antenna disc, and the coupling efficiency of the terahertz waveguide-dipole antenna topological structure is improved; the structure can be applied to the field of terahertz chip packaging, performs energy conversion between a chip and a waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, and can simplify the module manufacturing flow, and the structure has the advantages of high assembly consistency, simple structure, small volume and convenient processing.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be considered as limiting the scope.
Fig. 1 is a schematic diagram of a transition structure of a terahertz on-chip integrated dipole antenna of the present invention;
FIG. 2 is a cross-sectional view of section A-A of FIG. 1 of the terahertz on-chip integrated dipole antenna transition structure of the present invention;
FIG. 3 is a schematic diagram of an on-chip integrated dipole antenna topology for G-band applications of a preferred embodiment of the present invention;
FIG. 4 is a graph showing simulation results of S11 and S21 when a preferred embodiment of the present invention is applied to the G band;
icon: 1-a coplanar waveguide center conduction band; 2-coplanar waveguide ground layers; a 3-dipole antenna transition; 4-standard dipole antenna; 5-dipole antenna resonant stubs; 6-dipole antenna disc; 101-a rectangular terahertz chip; 102-a standard terahertz waveguide; 1011-dipole antenna topology; 1012-InP substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
First embodiment
Referring to fig. 1, the present embodiment provides an integrated dipole antenna transition structure on a terahertz chip, which is a preferred embodiment and is applied to a G-band, the structure includes a rectangular terahertz chip 101 based on a dipole antenna topology and connected to a standard terahertz waveguide 102, the rectangular terahertz chip 101 is based on a 50um InP substrate 1012 and is rectangular, the rectangular terahertz chip 101 is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip 101, the rectangular terahertz chip 101 is placed in the middle of a broad side of the standard terahertz waveguide 102 and is perpendicular to an H-plane of the standard terahertz waveguide 102 (an E-plane of the waveguide is generally a pattern section parallel to an electric field direction; an H-plane of the waveguide is a pattern section parallel to the magnetic field direction), the front surface of the rectangular terahertz chip 101 is provided with a dipole antenna topology 1011 and the back surface is provided with a metal layer (not shown in the drawing), and the dipole antenna topology 1011 includes a coplanar waveguide center conduction band 1, a coplanar waveguide ground layer 2, a dipole antenna transition section 3, a standard dipole antenna 4, a dipole antenna resonant stub 6 and a disc antenna 5 which are sequentially arranged from one end of the rectangular terahertz chip 101; the dipole antenna disc 6 is located at the end of the dipole antenna topological structure 1011 and is connected with the dipole antenna resonance branch 5, in this embodiment, the electromagnetic energy coupling area is increased through the dipole antenna disc 6, the coupling efficiency of the standard terahertz waveguide 102-dipole antenna topological structure 1011 is improved, the coupling center frequency point is adjusted through the standard dipole antenna 4 and the dipole antenna resonance branch 5, the coupling frequency bandwidth is expanded, and the electromagnetic energy coupling of the rectangular terahertz chip 101 and the standard terahertz waveguide 102 is realized.
Referring to fig. 2 and 3, a section of coplanar waveguide center conduction band 1, two coplanar waveguide ground layers 2, two sections of dipole antenna transition sections 3, two sections of standard dipole antennas 4, two sections of dipole antenna resonance branches 5 and two dipole antenna discs 6 are sequentially arranged from one end of the rectangular terahertz chip 101 to one end connected with the standard terahertz waveguide 102, wherein the coplanar waveguide ground layers 2, the dipole antenna transition sections 3, the standard dipole antennas 4, the dipole antenna resonance branches 5 and the dipole antenna discs 6 are symmetrically arranged, electromagnetic energy input by the standard terahertz waveguide 102 can be coupled to the dipole antenna topological structure 1011 with high performance by adjusting the length and width of the dipole antenna transition sections 3, the length and width of the standard dipole antennas 4, the length and width of the dipole resonance branches and the positions, and the diameter of the dipole antenna discs 6, in this embodiment, the width of the rectangular terahertz chip 101 is 970um, the width of the coplanar waveguide center conduction band 1 is 16um, the gap between the coplanar waveguide center conduction band 1 and the coplanar waveguide ground layer 2 is 14um, the length of the dipole antenna transition section 3 is 150um, the width is 16um, the length of the standard dipole antenna 4 is 110um, the width is 16um, the length of the dipole resonance branch is 60um, the width is 16um, the diameter of the dipole antenna disc 6 is 60um, the dipole antenna transition section 3, the standard dipole antenna 4, the dipole antenna resonance branch 5 and the dipole antenna disc 6 are integrally formed and form a symmetrical antenna structure, the antenna structure completely stretches into the standard terahertz waveguide 102, the grounding coplanar waveguide main circuit is symmetrically arranged on the coplanar waveguide ground layer 1 and the coplanar waveguide ground layer 2 on two sides of the antenna structure, the rectangular terahertz chip 101 is provided with a plurality of through holes symmetrical about the central conduction band 1 of the coplanar waveguide, the adjacent through holes are spaced, the diameter of each through hole is 25um, the spacing is 60um, the through holes are positioned on the coplanar waveguide grounding layer 2, the through holes are distributed along the two sides of the connection of the standard terahertz waveguide 102 and the rectangular terahertz chip 101 and the two sides of the central conduction band 1 of the coplanar waveguide and extend to the two sides of the rectangular terahertz chip 101 along one end of the central conduction band 1 of the coplanar waveguide, and the coplanar waveguide grounding layer 2 is connected with the metal layer on the back of the rectangular terahertz chip 101 through the through holes; the coplanar waveguide center conduction band 1 extends from one end of the rectangular terahertz chip 101 to a dipole transition section positioned in the middle of the rectangular terahertz chip 101, two dipole antenna transition sections 3 are arranged in parallel and are arranged at intervals, one dipole transition section is connected with the coplanar waveguide center band and is arranged in the extending direction of the coplanar waveguide center conduction band 1 to the standard terahertz waveguide 102, the other dipole transition section is connected with the coplanar waveguide ground layer 2, the other ends of the two dipole transition sections are respectively connected with a standard dipole antenna 4, the standard dipole antenna 4 extends from the dipole transition section to two sides of the rectangular terahertz chip 101 and is connected to dipole antenna resonance branches 5, the standard dipole antenna 4 is perpendicular to the coplanar waveguide center conduction band 1, the dipole antenna resonance branches 5 are parallel to the coplanar waveguide center conduction band 1, the tail ends of the dipole antenna resonance branches 5 are connected with a dipole antenna disc 6, the dipole antenna disc 6 is circular, and the diameter of the dipole antenna disc 6 is larger than the widths of the dipole antenna transition section 3, the standard dipole antenna 4 and the dipole antenna resonance branches 5.
Referring to fig. 4, a simulation result diagram of S11 and S21 when the present embodiment is applied to the G band is shown as follows:
the standard dipole antenna 4 and the dipole antenna resonance branch 5 determine two electromagnetic energy coupling center frequency points of the dipole antenna topological structure 1011, the two electromagnetic energy coupling center frequency points are overlapped and a final electromagnetic energy coupling frequency band is obtained, and the electromagnetic energy coupling of the rectangular terahertz chip 101 and the standard terahertz waveguide 102 can be realized in a broadband by respectively adjusting the lengths of the standard dipole antenna 4 and the dipole antenna resonance branch 5, expanding the coupling frequency bandwidth of the standard terahertz waveguide 102 and the dipole antenna topological structure 1011. The antenna topological structure increases the electromagnetic energy coupling area through the dipole antenna disc 6, improves the coupling efficiency of the standard terahertz waveguide 102-dipole antenna topological structure 1011, and the simulation shows that the antenna transition structure of the embodiment has optimal electromagnetic energy coupling efficiency when the diameter of the dipole antenna disc 6 is 60 um.
Based on the analysis and optimization data, the simulation results shown in fig. 4 are obtained: in the frequency range of 180-260 GHz, the insertion loss is better than 0.76dB, and the echo is better than 14dB. The embodiment is shown to be applicable to the G-band terahertz chip packaging field, and has the performances of low loss (less than 0.76 dB), ultra-wideband (more than 36%), simple structure and convenient processing.
In summary, the embodiment of the invention sequentially sets the coplanar waveguide center conduction band, the dipole antenna transition section, the standard dipole antenna, the dipole antenna resonance branch and the dipole antenna disk on the rectangular terahertz chip to form a dipole antenna topological structure, wherein the antenna transition section, the standard dipole antenna, the dipole antenna resonance branch and the dipole antenna disk form an integrated and symmetrical antenna structure, the standard dipole antenna and the dipole antenna resonance branch are used for adjusting a coupling center frequency point, the coupling frequency bandwidth is expanded, the electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide is realized, the electromagnetic energy coupling area is increased through the dipole antenna disk, and the coupling efficiency of the terahertz waveguide-dipole antenna topological structure is improved; the structure can be applied to the field of terahertz chip packaging, performs energy conversion between a chip and a waveguide, has the advantages of low loss, wide frequency band and high transition efficiency, and can simplify the module manufacturing flow, and the structure has the advantages of high assembly consistency, simple structure, small volume and convenient processing.
This description describes examples of embodiments of the invention and is not intended to illustrate and describe all possible forms of the invention. Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (9)
1. The integrated dipole antenna transition structure on the terahertz sheet is characterized by comprising a rectangular terahertz chip, wherein the front surface of the rectangular terahertz chip is provided with a dipole antenna topological structure, the back surface of the rectangular terahertz chip is provided with a metal layer, the rectangular terahertz chip is connected with a standard terahertz waveguide, the rectangular terahertz chip is placed in a rectangular metal cavity with the same width as the rectangular terahertz chip, the dipole antenna topological structure comprises a coplanar waveguide center conduction band, a coplanar waveguide grounding layer, a dipole antenna transition section, a standard dipole antenna, a dipole antenna resonance branch and a dipole antenna disc, which are sequentially arranged from one end of the rectangular terahertz chip to one end connected with the standard terahertz waveguide, the dipole antenna transition section, the standard dipole antenna, the dipole antenna resonance branch and the dipole antenna disc are integrally formed and form a symmetrical antenna structure, the antenna structure completely stretches into the standard terahertz waveguide, and a grounding coplanar waveguide main circuit is symmetrically arranged on the coplanar waveguide center conduction band and the coplanar waveguide grounding layers on two sides of the antenna structure; the coplanar waveguide center conduction band extends from one end of the rectangular terahertz chip to a dipole transition section in the middle, two sections of dipole antenna transition sections are arranged in parallel and are arranged at intervals, one section of the dipole transition section is connected with the coplanar waveguide center band and is arranged in the extending direction of the coplanar waveguide center conduction band to the standard terahertz waveguide, the other section of the coplanar waveguide center conduction band is connected with the coplanar waveguide ground layer, the other end of the two sections of dipole transition sections is connected with a standard dipole antenna, the standard dipole antenna extends from the dipole transition section to two sides and is connected to dipole antenna resonance branches, the standard dipole antenna is perpendicular to the coplanar waveguide center conduction band, the dipole antenna resonance branches are parallel to the coplanar waveguide center conduction band, and the tail ends of the dipole antenna resonance branches are connected with a dipole antenna disc; the dipole antenna disc is circular, and the diameter of the dipole antenna disc is larger than the widths of the dipole antenna transition section, the standard dipole antenna and the dipole antenna resonance branches; the rectangular terahertz chip is provided with a plurality of through holes which are symmetrical with respect to a central conduction band of the coplanar waveguide, and the coplanar waveguide grounding layer is connected with a metal layer on the back of the rectangular terahertz chip through the through holes;
the diameter of the via holes is 25um, the interval is 60um, the via holes are arranged on the coplanar waveguide grounding layer, the via holes are distributed along the two sides of the standard terahertz waveguide connected with the rectangular terahertz chip and the two sides of the central conduction band of the coplanar waveguide, and extend to the two sides of the rectangular terahertz chip along one end of the central conduction band of the coplanar waveguide.
2. The terahertz on-chip integrated dipole antenna transition structure according to claim 1, wherein the antenna topology structure increases electromagnetic energy coupling area through a dipole antenna disk, improves coupling efficiency of a rectangular terahertz waveguide-dipole antenna topology structure, and the dipole antenna disk is circular and has a diameter larger than widths of dipole antenna transition sections, standard dipole antennas and dipole antenna resonance branches.
3. The terahertz on-chip integrated dipole antenna transition structure of claim 1, wherein the antenna topology structure adjusts a coupling center frequency point of the dipole antenna topology structure by adjusting an extension length of a dipole antenna resonance branch along a direction parallel to a center conduction band of a coplanar waveguide, and expands a coupling frequency bandwidth of a standard terahertz waveguide and the dipole antenna topology structure to realize electromagnetic energy coupling of a rectangular terahertz chip and the standard terahertz waveguide.
4. The transition structure of the terahertz on-chip integrated dipole antenna according to claim 1, wherein the antenna topology structure adjusts a coupling center frequency point of the dipole antenna topology structure by adjusting the length of a standard dipole antenna, and expands the coupling frequency bandwidth of the standard terahertz waveguide and the dipole antenna topology structure to realize electromagnetic energy coupling of the rectangular terahertz chip and the standard terahertz waveguide.
5. The terahertz on-chip integrated dipole antenna transition structure of claim 1, wherein electromagnetic energy input by a standard terahertz waveguide can be coupled to a dipole antenna topology structure with high performance by adjusting the length and width of a dipole antenna transition section, the length and width of a standard dipole antenna, the length and width and position of a dipole resonance branch, and the diameter of a dipole antenna disk.
6. The terahertz on-chip integrated dipole antenna transition structure according to claim 5, wherein the diameter of the dipole antenna disk is 55-65 um.
7. The terahertz on-chip integrated dipole antenna transition structure of claim 5, wherein the length of the dipole resonance stub is 55-65 um.
8. The terahertz on-chip integrated dipole antenna transition structure according to claim 5, wherein the length of the standard dipole antenna is 105-115 um.
9. The terahertz on-chip integrated dipole antenna transition structure of claim 1, wherein the rectangular terahertz chip adopts an InP substrate.
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| CN114284671B (en) * | 2021-12-02 | 2022-10-11 | 电子科技大学 | Low-loss terahertz monolithic-waveguide transition structure based on heterogeneous integration |
| CN216389679U (en) * | 2021-12-28 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Waveguide CPW transition conversion device suitable for submillimeter wave frequency band |
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