CN103178351A - Tunable-frequency Terahertz metamaterials modulator - Google Patents
Tunable-frequency Terahertz metamaterials modulator Download PDFInfo
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- CN103178351A CN103178351A CN2013100625272A CN201310062527A CN103178351A CN 103178351 A CN103178351 A CN 103178351A CN 2013100625272 A CN2013100625272 A CN 2013100625272A CN 201310062527 A CN201310062527 A CN 201310062527A CN 103178351 A CN103178351 A CN 103178351A
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Abstract
The utility model discloses a tunable-frequency Terahertz metamaterials modulator comprising unit devices arranged periodically. Each unit device comprises a substrate, a functional material layer and metal resonator units. The functional material layer is arranged on the substrate, and the metal resonator units are arranged on the functional material layer. When the functional material layer turns to a metal phase from an insulation phase, conductivity of the functional material layer is exponentially increased to increase areas of middle open capacitance of the metal resonator units, the resonator frequency of the metal resonator units is decreased with the increase of the capacitance, so that frequency tuning of the unit devices is realized. By the aid of the tunable-frequency Terahertz metamaterials modulator, the metal opening resonator units arranged periodically are produced on the substrate in the Terahertz wave band of low transmitting consumption, conductivity changes before and after phase changes of the metal insulation phase change materials are used to change areas of the open capacitance of the resonator units, and resonant frequency is tunable; and initiative control of electromagnetic transmission features at a particular frequency by the Terahertz wave band is realized, and large switch ratio or high-modulation depth genera is obtained.
Description
Technical field
The invention belongs to the electromagnetic functional material field, more specifically, relate to the super material modulator of the adjustable THz wave of a kind of frequency.
Background technology
Terahertz (Terahertz, THz) ripple is that frequency is 3000～30 μ m between 0.1～10THz(wavelength) electromagnetic wave, be positioned at the electronics category and be in electronics to the specific position of photonic propulsion transition, have a lot of superior characteristics, in national defense and military, satellite communication, the aspects such as medical diagnosis have demonstrated wide application potential.
Metal-insulator phase transformation (Metal – Insulator Transition, MIT) material has under field excitation condition outside, the characteristic that resistivity of material, crystal structure change.Have research widely in fields such as optical switch, optical storages and use.
Super material (Metamaterials, MMs) refers to a made composite construction of class, has the not available electromagnetic property of natural material.By purpose setting unit device architecture is arranged, realize the change to effective dielectric constant and the equivalent permeability of MMs.The people such as calendar year 2001 Smith have realized the two negative super material of microwave regime by metal resonant element periodic arrangement, various types of metal resonance array devices are used to realize single negative or two negative super materials subsequently, people introduce the Terahertz field with this structure subsequently, a lot of terahertz wave bands occurred based on the super material devices of metallic pattern array.
Yet, existing terahertz wave modulator carries out amplitude modulation(PAM) or phase-modulation for natural frequency mostly, frequency few in number is adjustable, and terahertz wave modulator adopts the control to the semiconductor carrier concentration to realize frequency tuning, but due to materials limitations, the peak amplitude after modulation diminish or modulation depth not good.Also some device is micro mechanical structure or adopts liquid crystal material, causes device lifetime and stability to be affected.This has greatly limited the development of terahertz wave modulator.
Summary of the invention
For the defective of prior art, the object of the present invention is to provide the super material modulator of the adjustable THz wave of a kind of frequency, being intended to solve prior art can not be to the problem that resonance frequency is modulated or modulation depth is inadequate of the super material modulator of THz wave.
For achieving the above object, the invention provides the super material modulator of the adjustable THz wave of a kind of frequency, the unit component that comprises periodic arrangement, each unit component comprise substrate, be positioned at the functional material layer on substrate and be positioned at metal resonant element on described functional material layer; When described functional material layer is phase-changed into Metal Phase from insulation, the conductivity of described functional material layer is the area change that index doubly increases the middle opening electric capacity that makes the metal resonant element, and the resonance frequency of metal resonant element diminishes along with the increase of electric capacity and realized frequency tuning to unit component.
Further, the material of described functional material layer is oxide or the transition metal oxide of vanadium.
Further, the material of described functional material layer is vanadium dioxide.
Further, described metal resonant element is U-shaped split ring resonator or field coupled resonator.
Further, described substrate is sapphire, quartz or silicon materials, and thickness is 200-450 μ m.
Further, described vanadium dioxide film thickness is 0.05-1 μ m.
Further, the thickness of described metal resonant element is 0.15-1 μ m.
Further, described unit component is operated in terahertz wave band, and described unit component size is less than or equal to 1/10th of operation wavelength.
Further, described unit component is of a size of 3-300 μ m.
The present invention adopts fabrication cycle is arranged on terahertz wave band low transmission loss substrate metal openings resonant element, utilize conductivity variations before and after the phase transformation of MIT phase-change material to change the area of resonant element opening electric capacity, realized the super material modulator of THz wave that resonance frequency can be tuning, reached and at terahertz wave band, the electromagnetic transmission characteristic at a certain frequency place has been carried out initiative and control, obtained large on-off ratio or the high modulation degree of depth.
Description of drawings
Fig. 1 is the equivalent circuit diagram of the adjustable super material modulator of THz wave of the frequency that provides of the embodiment of the present invention;
Fig. 2 is that the unit component of the adjustable super material modulator of THz wave of the frequency that provides of the embodiment of the present invention is the schematic diagram of U-SRRs structure;
Fig. 3 is the analog result figure of the transmission coefficient of the U-SRRs unit component that provides of the embodiment of the present invention;
Fig. 4 is that the unit component of the adjustable super material modulator of THz wave of the frequency that provides of the embodiment of the present invention is the schematic diagram of ELC structure;
Fig. 5 is the analog result figure of the transmission coefficient of the ELC unit component that provides of the embodiment of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention provides a kind of super material modulator of THz wave of resonance absorbing peak frequency-tunable of active, and it utilizes MIT phase-change material VO
2The MIT phase transformation occurs under field excitation outside the resonance absorbing peak position of metal resonant element in MMs is modulated, and the THz wave transmission characteristic at absworption peak place is modulated.The advantages such as that this device has is all solid state, machinery-free structure, reversible regulation and control, the fields such as the switch in the Terahertz space optical communication device in future, filter, encoder have potential using value.
The super material modulator of the THz wave that the frequency that the embodiment of the present invention provides is adjustable comprises the unit component of periodic arrangement, and each unit component comprises substrate, be positioned at the functional material layer on substrate and be positioned at metal resonant element on the functional material layer; After the conductivity of functional material layer is phase-changed into Metal Phase from insulation, the area change of the middle opening electric capacity of metal resonant element, the resonance frequency of metal resonant element diminishes along with the increase of electric capacity and has realized frequency tuning to unit component.
In embodiments of the present invention, the material of functional material layer can be the 3d transition metal oxide, such as oxide of vanadium etc.
As 3d transition metal oxide, VO
2Have under field excitation outside the MIT of generation phase transformation, from the I phase transformation become M mutually after, its conductivity can increase 3～5 orders of magnitude, shows good conductivity.According to this character, VO
2At Uncooled infrared detection, light storage device, the application in the fields such as temperature-sensitive infrared switch obtains greater advance.
In embodiments of the present invention, the metal resonant element can be U-shaped split ring resonator (U-shapes Split Ring Resonators, U-SRRs), can also be field coupled resonator (Electric-LC resonator, ELC).The thickness of metal resonant element is 0.15-1 μ m.The basic principle of this metal resonant element is all to form electric capacity at opening part, produces LC resonance the electromagnetic wave of vertical incidence outside under field excitation, formation resonance absorbing peak.
In embodiments of the present invention, unit component is operated in terahertz wave band, and described unit component size is less than or equal to 1/10th of operation wavelength.
Fig. 1 shows the equivalent electric circuit of the adjustable super material modulator of THz wave of frequency that the embodiment of the present invention provides; Metal resonant element middle opening can be used as capacitor C (dotted line frame part in figure), and metal arm partly can be used as inductance L, forms LC loop generation LC resonance, VO
2Phase transformation whether representing the opening of switch (ON) and closing (OFF).Work as VO
2When being in insulation phase (I phase), in equivalent circuit diagram, switch disconnects (OFF), only has capacitor C 1 in circuit.Work as VO
2After becoming mutually Metal Phase (M phase) from I, be equivalent to increase the area of metal ELC middle opening capacitor C, what in equivalent circuit diagram, switch closed (ON), total capacitance C were I phase time capacitor C 1 with C2 is in parallel; Due to M phase VO
2Conductivity less than conductivity metal, so introduce equivalent resistance R as loss.
For the adjustable super material modulator of THz wave of frequency that the further description embodiment of the present invention provides, the material of functional material layer is take VO2 as example, and substrate is take sapphire as substrate, and thickness is 340-380 μ m; The heterogenous junction epitaxy VO2 film thickness of periodic arrangement is 150nm; Metal resonant element thickness is 200nm, and the material of employing is that metallic aluminium Al is that also details are as follows by reference to the accompanying drawings for example:
The super material modulator of the THz wave that dynamic frequency is adjustable comprises at the bottom of back lining and a plurality of device cells of periodic arrangement, and wherein each unit component comprises the VO that fine process produces on substrate
2With metal thin-film pattern.Substrate is the material of the terahertz wave band low transmission losses such as sapphire, quartz, silicon, and thickness is 200-450 μ m; VO
2Film thickness is 0.05-1 μ m; Metal thickness is 0.15-1 μ m.Metallic pattern can produce the structure of LC resonance for U-SRRs, ELC device etc.The device cycle: wide L
x, high L
yUnit component: VO
2The live width of electric capacity is d, and length is t, and electric capacity two-plate spacing is g; Metallic pattern unit live width is w, wide A
x, high A
y, the metallic pattern split shed is as capacitor C, and openings of sizes is also g.
(1) when the metal resonant element is U-shaped split ring resonator, as shown in Figure 2, the device cycle: wide L
x, high L
yUnit component: VO
2The live width of electric capacity is d, and length is t, and electric capacity two-plate spacing is g; Metallic pattern unit live width is w, wide A
x, high A
y, the metallic pattern split shed is as capacitor C, and openings of sizes is g.Device is operated in terahertz wave band, and the unit component size should be less than or equal to 1/10th of operation wavelength, so the unit component size range should be at 3-300 μ m.
Heterogenous junction epitaxy structure of VO on sapphire
2Conductivity be phase-changed into M from I the variation of 5 orders of magnitude occur mutually afterwards, make the VO of M phase
2Show good conductivity.Place it in the opening part of metal resonant element as capacitor plate, work as VO
2Be in the I phase time, have very low conductivity, inoperative at metal resonant element opening part, opening part capacitor plate width is the live width w of metal resonant element; Work as VO
2Be in the M phase time, have very high conductivity, be equivalent to increase the width of metal resonant element opening part capacitor plate.According to formula, the LC resonance frequency
And capacitor C=4 π ε S/d, wherein S is the capacitor plate area; The LC resonance frequency diminishes along with the increase of capacitor C, has realized the frequency tuning to device.
Getting the each several part device parameters is L
x=L
y=28 μ m; A
x=A
y=20 μ m, w=3 μ m, g=3 μ m; D=3 μ m, t=13 μ m.
According to above-mentioned parameter, the super material modulator of the THz wave that frequency is adjustable carries out structure and performance simulation through CST MWS analog simulation software, obtains transmission coefficient electromagnetic transmission characteristic as shown in Figure 3.See in the drawings: work as VO
2Be in the I phase time, the LC resonance absorbing peak of modulator is at 1.032THz frequency place, and transmission coefficient is 0.0849; Work as VO
2Become M mutually after, the red shift that the LC resonance absorbing peak of modulator has produced 0.24THz becomes 0.792THz, transmission coefficient is 0.3034; Work as in addition VO
2From I become mutually M mutually after, the on-off ratio at 1.032THz frequency place has reached 20.68dB, modulation depth has reached 81.13%.
(2) when the metal resonant element is the field coupled resonator, as shown in Figure 4, the device cycle: wide L
x, high L
yUnit component: VO
2The live width of electric capacity is d, and length is t, and electric capacity two-plate spacing is g; Metallic pattern unit live width is w, wide A
x, high A
y, the metallic pattern split shed is as capacitor C, and openings of sizes is g.Device is operated in terahertz wave band, and the unit component size should be less than or equal to 1/10th of operation wavelength, so the unit component size range should be at 3-300 μ m.
Operation principle is the same, does not repeat them here.
Getting the each several part device parameters is L
x=60 μ m, L
y=35 μ m; A
x=48 μ m, A
y=24 μ m, w=4 μ m, g=3 μ m; D=3 μ m, t=20 μ m.
According to above-mentioned parameter, the super material modulator of the THz wave that frequency is adjustable carries out structure and performance simulation through CST MWS analog simulation software, obtains transmission coefficient electromagnetic transmission characteristic as shown in Figure 5.See in the drawings: work as VO
2Be in the I phase time, the LC resonance absorbing peak of modulator is at 1.032THz frequency place, and transmission coefficient is 0.0656; Work as VO
2Become M mutually after, the red shift that the LC resonance absorbing peak of modulator has produced 0.504THz becomes 0.798THz, transmission coefficient is 0.2386; Work as in addition VO
2From I become mutually M mutually after, the on-off ratio at 1.032THz frequency place has reached 21.4dB, modulation depth has reached 85.1%.
The adjustable super material modulator of THz wave of frequency for the further description embodiment of the present invention provides, now describe its technological process in detail as follows:
(1) adopt existing various depositing operation epitaxial growth VO on Sapphire Substrate
2Film;
(2) adopt semiconducter process to VO
2Film carries out microfabrication, makes VO
2The capacitor plate figure;
(3) continue making the VO of figure
2Make metal resonant element figure on Membranous Foundations.
Wherein, can adopt depositing operations such as ion beam sputtering or magnetron sputtering; The semiconducter process that can adopt comprises photo etched mask, etching.Can adopt the lift-off lift-off technology to make metal resonant element figure.
The present invention utilizes the semiconductor fine processing technology to be prepared, and integrated functionality devices field such as optical switch, filter, encoder has potential using value in the Terahertz space optical communication device in future.
Those skilled in the art will readily understand; the above is only preferred embodiment of the present invention; not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. super material modulator of THz wave that frequency is adjustable comprises it is characterized in that the unit component of periodic arrangement, and each unit component comprises substrate, be positioned at the functional material layer on substrate and be positioned at metal resonant element on described functional material layer; When described functional material layer is phase-changed into Metal Phase from insulation, the conductivity of described functional material layer is the area change that index doubly increases the middle opening electric capacity that makes the metal resonant element, and the resonance frequency of metal resonant element diminishes along with the increase of electric capacity and realized frequency tuning to unit component.
2. the super material modulator of THz wave as claimed in claim 1, is characterized in that, the material of described functional material layer is oxide or the transition metal oxide of vanadium.
3. the super material modulator of THz wave as claimed in claim 2, is characterized in that, the material of described functional material layer is vanadium dioxide.
4. the super material modulator of THz wave as claimed in claim 1, is characterized in that, described metal resonant element is U-shaped split ring resonator or field coupled resonator.
5. the super material modulator of THz wave as claimed in claim 1, is characterized in that, described substrate is sapphire, quartz or silicon materials, and thickness is 200-450 μ m.
6. the super material modulator of THz wave as claimed in claim 3, is characterized in that, described vanadium dioxide film thickness is 0.05-1 μ m.
7. the super material modulator of THz wave as claimed in claim 1, is characterized in that, the thickness of described metal resonant element is 0.15-1 μ m.
8. the super material modulator of THz wave as claimed in claim 1, is characterized in that, described unit component is operated in terahertz wave band, and described unit component size is less than or equal to 1/10th of operation wavelength.
9. the super material modulator of THz wave as claimed in claim 1, is characterized in that, described unit component is of a size of 3-300 μ m.
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