CN108845437A - A kind of novel terahertz wave modulator - Google Patents
A kind of novel terahertz wave modulator Download PDFInfo
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- CN108845437A CN108845437A CN201810676918.6A CN201810676918A CN108845437A CN 108845437 A CN108845437 A CN 108845437A CN 201810676918 A CN201810676918 A CN 201810676918A CN 108845437 A CN108845437 A CN 108845437A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
Abstract
The invention discloses a kind of novel terahertz wave modulators, and by back lining bottom, there is the wave filtering layer of periodical metal resonant element array structure to form for intermediate modulating layer and top layer.The substrate layer is the substrate material transparent to THz wave, and modulating layer is the film with good phase-change characteristic, with a thickness of 20-160nm.Wave filtering layer is the metal resonant element array with " CI " type structure, with a thickness of 50-200nm.Each periodic unit is made of " I " rectangular metal item and " C " shape opening annulus, and rectangular metal item is 70-140 μm long, 10-20 μm wide, and 50-75 μm from the center of circle of rectangular centre.Being open, annulus outer diameter is identical as rectangular metal length, and the ring width and rectangular metal item for the annulus that is open are of same size, 1-7 μm of opening width on annulus, and adjacent metal resonant element spacing is 130-180 μm.This modulator can not only filter but also can be with a variety of triggering mode dynamic modulation THz electromagnetic waves, and modulating speed is fast, and triggering mode is easy to operate, and device fabrication is easy, and structure tolerance rate is higher, be convenient for large-scale production.
Description
Technical field
The present invention relates to a kind of terahertz wave modulator parts, especially can be using the device of multiple means modulation THz wave
Part.
Technical background
THz wave frequency is located within the scope of 0.1-10THz, and wavelength is 30-3000 μm of electromagnetic radiation, possess it is many its
The no advantageous property of all band, for example, there is good penetrability to many dielectric materials and nonpolar liquid, it can be to impermeable
Bright object carries out perspective imaging；Photon energy is lower, will not cause to be suitable for living to biology the harmful ionization reaction of life entity
Body tissue carries out non-destructive testing；Comprising spectral information abundant, for a large amount of molecule, especially organic molecule, rotation and
The energy level transition of vibration shows strong absorption and dispersion characteristics etc. in terahertz wave band just.Currently, for this wave band
Modulator is mostly formed with the microstructure designs such as " photonic crystal ", " metamaterial structure " " metal sub-wavelength hole battle array ", can be to THz wave
Multifrequency natures such as " amplitude " " position phase " " impulse form " " spectrum " " time domain or frequency domains " are regulated and controled, and apply THz wave in each neck
Domain, such as wireless telecommunications, safety detection, military affairs detection, astronomical observation etc..Existing THz wave modulator is mostly based on filter, i.e.,
Different frequency, bandwidth, the band logical of wave mode or bandreject filtering effect are realized to THz wave using micro-structure.Although but such modulator
It can reach and Static Filtering is carried out to electromagnetic wave, but dynamic modulation can not be carried out to it, and manufacturing procedure is complex, structure
It is not easy to optimization change, yield is lower.
Summary of the invention
It, can not be simply to regulate and control method pair the purpose of the invention is to overcome existing Terahertz modulator function single
THz wave carries out the problem of dynamic modulation.
Technical solution of the present invention is as follows：
A kind of novel terahertz wave modulator, structural schematic diagram such as Fig. 1, including substrate layer, intermediate modulating layer, and filter
Wave layer composition.The substrate layer is the substrate material transparent to THz wave, and modulating layer is two with good phase-change characteristic
Vanadium oxide film, wave filtering layer are the metal resonant element arrays with " CI " type structure.
Technical effect of the invention：
1, a kind of novel terahertz wave modulator of the present invention, can dynamic modulation Terahertz according to actual needs
Wave.
2, a kind of novel terahertz wave modulator of the present invention, can be with a variety of triggering modes such as temperature, electric field, light
It realizes and dynamic modulation is carried out to THz wave.
3, a kind of novel terahertz wave modulator of the present invention, dynamic modulation speed is very fast, reaches as high as
Nanosecond order.
4, a kind of novel terahertz wave modulator of the present invention has structure simple, easy to process, is convenient for scale
The advantages that production.
Detailed description of the invention
Fig. 1 Terahertz modulator structure schematic diagram of the present invention.
Fig. 2 wave filtering layer metal resonant element schematic diagram of the present invention.
Terahertz wave modulator filter effect figure at room temperature and 85 DEG C in Fig. 3 embodiment.
Specific embodiment：
Refering to fig. 1 and Fig. 2.It is first coated with one layer of dynamic modulation layer (2) on underlying substrate (1), then utilizes micro Process skill
Art prepares metal micro structure wave filtering layer (3) on dynamic modulation layer (2).In said modulator, underlying substrate (1) is to Terahertz
The transparent material of wave, dynamic modulation layer (2) are high-performance VO2Film, with a thickness of 20-160nm, metal micro structure wave filtering layer (3)
For the sub-wavelength metal micro-cell array structure with periodicity " CI " shape, metal layer thickness 50-200nm, each period
Unit is made of " I " rectangular metal item (4) and " C " shape opening annulus (5).In said modulator, rectangular metal item (4) long 70-
It is 140 μm, 10-20 μm wide, 50-75 μm from the center of circle of rectangular centre.Annulus (5) outer diameter that is open is identical as rectangular metal item (4) length, opens
The ring width and rectangular metal item (4) of mouth annulus (5) are of same size, and the opening (6) on annulus is 1-7 μm wide, are located in the middle part of annulus, far
From rectangular metal item (4) side, long side of the opening direction perpendicular to rectangular metal item (4).Adjacent metal resonant element spacing is
130-180μm。
Embodiment
Using intrinsic Si as underlying substrate (1) material, one layer of VO is deposited using DC reactive magnetron sputtering technique2Film is as dynamic
State modulating layer (2), dynamic modulation layer (2) deposit one layer using thermal evaporation on dynamic modulation layer (2) with a thickness of 120nm
Layer gold is etched into the micro- knot being made of rectangular metal item (4) and opening annulus (5) using MEMS technology by the layer gold of 120nm thickness
For structure array as metal micro structure wave filtering layer (3), rectangular metal item (4) is 100 μm long, 15 μm wide, and the internal diameter of opening annulus (5) is
70 μm, outer diameter is 100 μm, and for opening direction far from rectangular metal item (4) one end, (6) width that is open is 3 μm.Finally with Terahertz
Wave irradiates the modulator, with metal micro structure wave filtering layer (3) for the THz wave plane of incidence, with underlying substrate (1) for exit facet, point
The modulator at room temperature and 85 DEG C is not tested, and as a result Fig. 3 is shown in the modulation effect of THz wave.As seen from Figure 3, not
Under synthermal, which has apparent modulation effect to THz wave.
Claims (4)
1. a kind of novel terahertz wave modulator, it is characterised in that by substrate layer (1), modulating layer (2) and there is periodical metal
The wave filtering layer (3) of resonant element array structure forms.The substrate layer (1) is in the bottom, and modulating layer (2) is in centre, filtering
Layer (3) is in top.Substrate layer (1) is monocrystalline intrinsic silicon, vanadium dioxide material of the modulating layer (2) with a thickness of 20-160nm, filter
The metal resonant element material of wave layer (3) is gold, has " Cl " shape structure, including " I " rectangular metal item (4) and " C " shape opening
Annulus (5), opening annulus (5) upper opening (6) opening direction is far from " I " rectangular metal item (4) one end.Its metal resonant layer thickness
For 50-200nm, rectangular metal item (4) is 70-140 μm long, 10-20 μm wide, and 50-75 μm from the center of circle of rectangular centre.Be open annulus
(5) outer diameter is identical as rectangular metal item (4) length, and the ring width and rectangular metal item (4) of opening annulus (5) are of same size, on annulus
Opening (6) it is 1-7 μm wide.Adjacent metal resonant element spacing is 130-180 μm.
2. a kind of novel terahertz wave modulator according to claim 1, it is characterised in that constitute the substrate of the modulator
(1) it is also possible to other transparent materials under THz wave, modulating layer (2) is also possible to other under certain dynamic excitation
Material with semiconductor-metal phase-change characteristic, the material of wave filtering layer (3) are also possible to the good metal of other electric conductivities.
3. a kind of novel terahertz wave modulator according to claim 1, it is characterised in that resonant element is open annulus (5)
Opening direction can also be any other direction according to the wavelength to be modulated.
4. a kind of novel terahertz wave modulator according to claim 1, structure also can according to need in wave filtering layer
Outer one or more layers dielectric layer of increase, to be protected to modulator.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810676918.6A CN108845437A (en) | 2018-06-22 | 2018-06-22 | A kind of novel terahertz wave modulator |
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| CN201810676918.6A CN108845437A (en) | 2018-06-22 | 2018-06-22 | A kind of novel terahertz wave modulator |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109856825A (en) * | 2019-02-14 | 2019-06-07 | 合肥工业大学 | A kind of Terahertz transmission-type modulator based on double-level-metal micro-structure and liquid crystal |
| CN110133759A (en) * | 2019-04-23 | 2019-08-16 | 电子科技大学 | One kind being based on VO2Dynamic Terahertz super lens |
| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN113422184A (en) * | 2021-06-11 | 2021-09-21 | 西安电子科技大学 | Gain-adjustable radio frequency attenuation device based on split ring resonator |
| CN113670848A (en) * | 2021-08-23 | 2021-11-19 | 中国人民解放军军事科学院国防科技创新研究院 | High-resolution broadband terahertz detector based on pixelized structure and detection method |
| CN114755847A (en) * | 2022-05-09 | 2022-07-15 | 电子科技大学 | Based on VO2Switchable terahertz wave beam regulation and control device and preparation method thereof |
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| CN105322253A (en) * | 2015-10-28 | 2016-02-10 | 上海师范大学 | Terahertz dual-band band-stop filter resonator element and manufacturing method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109856825A (en) * | 2019-02-14 | 2019-06-07 | 合肥工业大学 | A kind of Terahertz transmission-type modulator based on double-level-metal micro-structure and liquid crystal |
| CN110133759A (en) * | 2019-04-23 | 2019-08-16 | 电子科技大学 | One kind being based on VO2Dynamic Terahertz super lens |
| CN110133759B (en) * | 2019-04-23 | 2020-06-16 | 电子科技大学 | Based on VO2Dynamic terahertz superlens |
| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN113422184A (en) * | 2021-06-11 | 2021-09-21 | 西安电子科技大学 | Gain-adjustable radio frequency attenuation device based on split ring resonator |
| CN113422184B (en) * | 2021-06-11 | 2022-05-17 | 西安电子科技大学 | Gain-adjustable radio frequency attenuation device based on split ring resonator |
| CN113670848A (en) * | 2021-08-23 | 2021-11-19 | 中国人民解放军军事科学院国防科技创新研究院 | High-resolution broadband terahertz detector based on pixelized structure and detection method |
| CN114755847A (en) * | 2022-05-09 | 2022-07-15 | 电子科技大学 | Based on VO2Switchable terahertz wave beam regulation and control device and preparation method thereof |
| CN114755847B (en) * | 2022-05-09 | 2023-11-14 | 电子科技大学 | VO-based 2 Switchable terahertz wave beam regulating device and preparation method thereof |
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Application publication date: 20181120 |