CN105301804B - New Terahertz superconduction modulator and modulator approach - Google Patents
New Terahertz superconduction modulator and modulator approach Download PDFInfo
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- CN105301804B CN105301804B CN201510685790.6A CN201510685790A CN105301804B CN 105301804 B CN105301804 B CN 105301804B CN 201510685790 A CN201510685790 A CN 201510685790A CN 105301804 B CN105301804 B CN 105301804B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0081—Electric or magnetic properties
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- Optics & Photonics (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The invention discloses a kind of new Terahertz superconduction modulator, including the electrode being made up of golden film, magnesium oxide substrate and the niobium nitride film being grown on the magnesium oxide substrate, the niobium nitride film includes the cellular construction of multiple periodic arrangements, the cellular construction is constituted by fish scale-shaped structure resonator and double L-shaped structure resonator are compound, is often arranged after the fish scale-shaped structure resonator is connected with each other and is connected in parallel on the electrode at two ends.The invention also discloses the method for preparing above-mentioned new Terahertz superconduction modulator and the modulator approach of the utilization new Terahertz superconduction modulator.Simple in construction, novelty of the invention, the superconductor niobium nitride used, has extremely low ohmic loss in terahertz wave band than conventional metal material, and with good tuning performance, larger transmission peaks modulation rate, modulator approach simple and fast are realized using the voltage of very little simultaneously.
Description
Technical field
The invention belongs to THz wave transmission technique field, more particularly to a kind of new Terahertz superconduction modulator and modulation
Method.
Background technology
With developing rapidly for Terahertz Technology, it is in the field exhibition such as material property research, biomedicine, imaging, communication
Great scientific value and wide application prospect are showed.The application effective to THz wave is realized, particularly too
In terms of hertz transmission, the function element of Terahertz modulator etc is most important.With research and development in recent years, someone starts
Proposition realizes Terahertz modulator using electromagnetism metamaterial structure.
The electromagnetic performance of electromagnetism Meta Materials is highly dependent on the cell geometry of its composition, and people are only needed to by design
The structure of resonator just can neatly control its electromagnetic property, show in terms of the function elements such as converter, switch, modulator
Huge application prospect, especially in terms of the modulation that signal is transmitted.Meanwhile, superconduction Meta Materials and common metal Meta Materials phase
Than with extremely low ohmic loss and to external environment sensitive, with good tuning characteristic.Existing superconduction Meta Materials terahertz
Hereby modulator is more is regulated and controled with changing additional temperature, magnetic field, light intensity, and control methods are relatively complicated, are unfavorable for extensive use, and
Existing semiconductor Meta Materials modulator, required control voltage is higher and modulation range is relatively low, and structure is complex.
The content of the invention
Goal of the invention：The problem of existing for above-mentioned prior art and deficiency, it is an object of the invention to provide one kind is new
Terahertz superconduction modulator and modulator approach, are modulated by simple additional control voltage, realize what terahertz signal was transmitted
Regulation and control.Simple in construction, novelty of the invention, the superconductor niobium nitride used has in terahertz wave band than conventional metal material
Extremely low ohmic loss, and with good tuning performance, while realizing that larger transmission peaks are modulated using the voltage of very little
Rate, modulator approach simple and fast.
Technical scheme：For achieving the above object, the technical solution adopted by the present invention is a kind of new Terahertz superconduction
The design and the method using voltage modulated of modulator (referred to as " modulator ") so that the resonator transmission peaks of Terahertz frequency range exist
The tuning of amplitude and peak value dot frequency is realized in the presence of applied voltage.
The cellular construction of Terahertz superconduction modulator design, is answered by fish scale-shaped structure resonator with double L-shaped structure resonator
Close and constitute.Shape, the size of fish scale-shaped resonator and double L-shaped resonator are adjusted, so as to adjust the compound generation of two parts resonator
Modulator transmission peaks.For example, regulation fish scale-shaped resonator, the resonant frequency for making its independent excitation is 0.6THz, adjust double L-shaped
Resonator, the resonant frequency for making its independent excitation is 0.41THz, and two parts resonator is combined and excited jointly, at 0.53THz
Produce transmission peaks.On the modulator based on magnesium oxide substrate, cellular construction periodic arrangement, often arrange fish scale-shaped structure resonator that
This connection is connected in parallel on two ends on the electrode that golden film is constituted.
A kind of modulator approach using new Terahertz superconduction modulator, including applied voltage regulation and control transmission peaks amplitude with
Frequency, specifically includes following steps：
(1) modulator is vertically fixed on the specimen holder of the cooled cryostat equipped with optical window, is connected and adjusted by wire
The positive and negative electrode of device processed is exported and connected with power meter, and the modulator put up is put into terahertz time-domain spectroscopy together with Dewar
Correct position in system
(2) Dewar sample cavity is extracted into vacuum state, then reduces and keep sample cavity temperature in 4.5K；
(3) nitrogen is filled with to the terahertz time-domain spectroscopy system of closing, humidity is less than 5%RH；
(4) by power meter, the DC voltage between additional 0~2V is distinguished to modulator；
(5) at a temperature of measuring 4.5K by terahertz time-domain spectroscopy instrument, the transmission of modulator under the conditions of different applied voltages
Transmission spectrum；
Beneficial effect：The Terahertz modulator of the structure is compared to conventional, novelty simple in construction, from the super material of niobium nitride superconduction
Material has higher energy gap frequency and superconducting transition temperature, has extremely low ohmic loss and tunability compared with common metal, carries
The high performance of modulator, with higher modulation rate, meanwhile, the voltage needed for modulation is smaller, only 2V.
Brief description of the drawings
Fig. 1 is the cellular construction schematic diagram of Terahertz superconduction modulator；
Fig. 2 is the partial structural diagram of Terahertz superconduction modulator；
Fig. 3 is the whole sample of Terahertz superconduction modulator and specimen holder photo；
Fig. 4 tests transmission spectrum of the sample under the modulation of 0V, 2V impressed DC voltage for the Terahertz modulator of the present invention
Figure.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
The use scope of the present invention rather than the limitation present invention, after the present invention has been read, those skilled in the art are to the present invention
The modifications of the various equivalent form of values fall within the application appended claims limited range.
First, new Terahertz superconduction modulator is designed
To design the structure of new Terahertz superconduction modulator, various metamaterial structures are have studied.But before
Structure it is mostly complex, modulation rate is not high enough, modulation needed for applied voltage value it is larger, while based superconductive transition temperature
The niobium nitride superconducting thin film higher with energy gap frequency, we devise a kind of simple Terahertz superconduction by substrate of magnesia
Modulator structure, schematic diagram are as shown in figure 1, the overall structure of the modulator is MgO-NbN+Au (electrode), and in 0.53THz
Nearby produce an obvious transmission peaks.The niobium nitride structure (film) is humorous by fish scale-shaped structure resonator and double L-shaped structure
The device that shakes is constituted, and selects this structure main reason is that planform is fairly simple, making is easy, while often arranging the fish that is connected to each other
Imbricated texture resonator is connected in parallel on positive and negative electrode, can also serve as the effect of wire.
To determine the design parameter of the structure, first a large amount of moulds are carried out with the electromagnetism farm software CST based on time-domain integration algorithm
Intend emulation, x is respectively set to electric border and magnetic border with y directions, and electromagnetic field transmission direction is along z directions, finally according to transmission
Characteristic determines optimal design parameter.Thickness d=1mm of magnesium oxide substrate (referred to as " substrate "), niobium nitride structure (film) in Fig. 1
Thickness be 150nm, metal electrode thickness 200nm, P_x=P_y=84 μm.A=40 μm in the cellular construction of niobium nitride material,
B=68 μm, c=62 μm, e=4 μm, h=28 μm, s=7 μm, all w=5 μm of structure line widths.
2nd, Terahertz superconduction modulator device processing and fabricating
Actual fabrication is carried out according to such as Fig. 1 Terahertz superconduction modulator structure parameters simulated, L-edit softwares are used first
Fig. 1 structure is drawn into mask plate file, then makes mask plate.Then the specific steps process of sample making is as follows：
(1) niobium nitride film is grown
It is 10mm × 10mm that acetone, alcohol, deionized water, which are cleaned by ultrasonic size, first, and thickness is 1mm magnesium oxide substrate,
AC magnetic controlled sputtering technology deposit thickness is used for 150nm niobium nitride film.
(2) one layer of photoresist is got rid of
In niobium nitride film, one layer of photoresist AZ1500, pre- rotating speed 600rpm, stabilized (steady-state) speed 6000rpm, time point are got rid of
Wei not be 6/20 second, baking temperature is 90 DEG C, and the time is 10 minutes.
(3) uv-exposure and development
Placed on litho machine and coat the substrate and mask plate (MASK) of photoresist and be aligned, mask structure being is tied for the cycle
Structure.Time for exposure is 17 seconds, has been exposed followed by be developed with developer for positive photoresist, and developing time is 12 seconds, is then carried out
After dry, baking temperature be 90 DEG C, the time be 10 minutes.
(4) etch nitride niobium structure
By reactive ion etching process, gas CHF is used3And SF6, control gas flow 40sccm and 10sccm, etching
3 minutes time, periodic niobium nitride modulator structure is gone out in the Surface Machining of magnesium oxide substrate.
(5) two layers of photoresist is got rid of
On niobium nitride modulator, two layers of photoresist LOR and AZ1500, Xian Shuai lower floor photoresist LOR, pre- rotating speed are got rid of successively
600rpm, stabilized (steady-state) speed 4000rpm, the time are respectively 6/40 second, 150 DEG C of baking temperature, and the time is 5 minutes.Upper strata light is got rid of again
Photoresist AZ1500, pre- rotating speed 600rpm, stabilized (steady-state) speed 6000rpm, the time are respectively 6/30 second, and baking temperature is 90 DEG C, time
For 10 minutes.
(6) the 3rd step is repeated, but the time for exposure is 16 seconds, and developing time is 15 seconds.
(7) layer of metal is evaporated on the photoresist AZ1500 and the magnesium oxide substrate exposed, layer of metal will be evaporated
Substrate be immersed in the one layer of gold peeled off and removed on the remaining photoresist AZ1500 and photoresist AZ1500 in acetone soln
Category, then removes two gold film electrodes that remaining photoresist LOR obtains Terahertz superconduction modulator with developer solution.
By procedure above, it is possible to obtain Terahertz superconduction modulator as shown in Figure 2, whole sensor size is 10mm
×10mm。
3rd, the method for Terahertz superconduction modulator electric tuning
(1) test system is built
On the specimen holder that modulator is vertically fixed on to the cooled cryostat equipped with optical window, modulator is connected by wire
Positive and negative electrode export and connect with power meter, open terahertz time-domain spectroscopy detecting system (TDS systems), by the tune put up
Device processed is put into correct position in TDS systems together with Dewar, the center of modulator is in light path near optical axis；
(2) test environment is controlled
Sample cavity is vacuumized first, then reduces and stable sample cavity temperature is in 4.5K；
(3) electric tuning of Terahertz superconduction modulator and measurement
By power meter, 0~2V DC voltages are inputted respectively to modulator, measured respectively by terahertz time-domain spectroscopy instrument
At a temperature of 4.5K, the modulator transmission spectrum of different applied voltages；
4th, Terahertz superconduction modulator experimental result and discussion
The topmost application aspect of Terahertz superconduction modulator that the present invention is designed is signal transmission modulation.As can be seen from Figure 4,
Modulator transmission peaks amplitude when external voltage is 0V reaches 0.786, the centre frequency 0.532THz of transmission peaks, works as applied voltage
When gradually increasing and being finally reached 2V, transmission peak amplitude is reduced to 0.169, and centre frequency is 0.457THz, and amplitude modulation rate reaches
78.5%, frequency modulation(PFM) 75GHz.
In addition, the Terahertz superconduction modulator of the present invention, with respect to the semiconductor Terahertz modulator of document report, Ke Yiyong
Smaller regulation and control voltage obtains bigger modulation range, while Niobium Superconducting of the niobium nitride superconductor operating temperature than document report
Meta Materials temperature is high, and more simple economy is practical.
In a word, the Terahertz superconduction modulator that we design and produce on magnesia, is mainly reflected in structure novelty, selects
Material is superior, and modulator approach is simple and convenient, the advantages of modulation rate is high.According to actual needs, it is real by the optimization design to structure
The first tuning of existing transmission peaks, can also obtain other frequencies, the more preferable device of amplitude tuning performance.Therefore, it is widely used in too
In terms of hertz modulator.
Claims (10)
1. a kind of new Terahertz superconduction modulator, it is characterised in that including the electrode, magnesium oxide substrate and life being made up of golden film
The long niobium nitride film on the magnesium oxide substrate, the niobium nitride film includes the cellular construction of multiple periodic arrangements, institute
State cellular construction to be constituted by fish scale-shaped structure resonator and double L-shaped structure resonator are compound, often arrange the fish scale-shaped structure resonance
Device is connected in parallel on the electrode at two ends after being connected with each other.
2. new Terahertz superconduction modulator according to claim 1, it is characterised in that the niobium nitride is superconduction nitridation
Niobium, the thickness of the niobium nitride film is 150nm.
3. new Terahertz superconduction modulator according to claim 1, it is characterised in that the thickness of the magnesium oxide substrate is
1mm。
4. a kind of preparation method of new Terahertz superconduction modulator, it is characterised in that comprise the following steps：(1) growth nitridation
Niobium pentoxide film：Magnesium oxide substrate is cleaned, using AC magnetic controlled sputtering technology cvd nitride niobium pentoxide film；(2) one layer of photoresist is got rid of：Institute
State in niobium nitride film, get rid of one layer of photoresist；(3) uv-exposure and development：The oxidation for coating photoresist is placed on litho machine
Magnesium-based piece and mask plate are simultaneously aligned, and the structure of the mask plate is periodic structure, has exposed followed by with developer for positive photoresist to be entered
Row development, dries after then carrying out；(4) etch nitride niobium structure：By reactive ion etching process, in the magnesium oxide substrate
Surface Machining goes out periodic niobium nitride structure, and the niobium nitride structure is humorous by fish scale-shaped structure resonator and double L-shaped structure
The device that shakes is constituted；(5) two layers of photoresist is got rid of：In the niobium nitride structure, two layers photoresist LOR and AZ1500 are got rid of successively；(6) weight
The multiple step (3)；(7) layer of metal is evaporated on the photoresist AZ1500 and the magnesium oxide substrate exposed, one will be evaporated
The magnesium oxide substrate of layer metal peels off the layer of metal removed on the remaining photoresist AZ1500 and photoresist AZ1500, so
After remove remaining photoresist LOR and obtain two gold film electrodes.
5. the preparation method of new Terahertz superconduction modulator according to claim 4, it is characterised in that the step (1)
In, use acetone, alcohol, deionized water to be cleaned by ultrasonic size for 10mm × 10mm first, thickness is 1mm magnesium oxide substrate,
AC magnetic controlled sputtering technology deposit thickness is used for 150nm niobium nitride film.
6. the preparation method of new Terahertz superconduction modulator according to claim 4, it is characterised in that the step (2)
In step (3), in the niobium nitride film, one layer of photoresist AZ1500, pre- rotating speed 600rpm, stabilized (steady-state) speed are got rid of
6000rpm, the time is respectively 6/20 second, and baking temperature is 90 DEG C, and the time is 10 minutes, using litho machine to the photoresist
AZ1500 is exposed, and the time is 17 seconds, is developed after having exposed with developer for positive photoresist, and the time is 12 seconds, is then carried out
After dry, baking temperature be 90 DEG C, the time be 10 minutes.
7. the preparation method of new Terahertz superconduction modulator according to claim 4, it is characterised in that the step (4)
In, using reactive ion etching process, pass through gas CHF3And SF6, control gas flow 40sccm and 10sccm, etch period 3
Minute, go out periodic niobium nitride structure in the magnesium oxide substrate Surface Machining.
8. the preparation method of new Terahertz superconduction modulator according to claim 4, it is characterised in that the step (5)
In, in the niobium nitride structure, two layers of photoresist LOR and AZ1500, Xian Shuai lower floor photoresist LOR, pre- rotating speed are got rid of successively
600rpm, stabilized (steady-state) speed 4000rpm, the time are respectively 6/40 second, 150 DEG C of baking temperature, and the time is 5 minutes；Upper strata light is got rid of again
Photoresist AZ1500, rotating speed is respectively 600/6000rpm, and the time is 6/30 second, and baking temperature is 90 DEG C, and the time is 10 minutes, profit
The photoresist LOR and AZ1500 is exposed again with litho machine, the time is 16 seconds, has exposed and has been shown with developer for positive photoresist
Shadow, 15 seconds time, dries, baking temperature is 90 DEG C, the time is 10 minutes after then carrying out.
9. the preparation method of new Terahertz superconduction modulator according to claim 4, it is characterised in that the step (7)
In, layer of metal is evaporated on the photoresist AZ1500 and the magnesium oxide substrate exposed, the magnesia of layer of metal will be evaporated
Substrate is immersed in the layer of metal peeled off and removed on the remaining photoresist AZ1500 and photoresist AZ1500 in acetone soln,
Then remove remaining photoresist LOR with developer solution and obtain two gold film electrodes.
10. a kind of modulator approach using new Terahertz superconduction modulator as claimed in claim 1, it is characterised in that including
Following steps：
1) the new Terahertz superconduction modulator is vertically fixed on to the sample of the liquid helium continuous stream Dewar equipped with optical window
On frame, the positive and negative electrode of the new Terahertz superconduction modulator is connected by wire, exports and connects with power meter；
2) Dewar sample cavity is extracted into vacuum state, then reduces and keep Dewar sample cavity temperature in 4.5K；
3) power meter is utilized, the DC voltage between the new additional 0~2V of Terahertz superconduction modulator, during by Terahertz
Domain spectrometer is measured at a temperature of 4.5K respectively, the transmission of the new Terahertz superconduction modulator under different applied voltage amplitudes
Transmission spectrum.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104465342A (en) * | 2013-11-08 | 2015-03-25 | 电子科技大学 | Terahertz blueshift modulator based on electric-control transistor and preparation method |
| CN104505561A (en) * | 2014-12-17 | 2015-04-08 | 国家纳米科学中心 | Multiband terahertz filter and manufacture method of multiband terahertz filter |
| CN104678598A (en) * | 2015-03-31 | 2015-06-03 | 中国石油大学(华东) | Terahertz modulator, and preparation method and tuning method of terahertz modulator |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN104465342A (en) * | 2013-11-08 | 2015-03-25 | 电子科技大学 | Terahertz blueshift modulator based on electric-control transistor and preparation method |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104505561A (en) * | 2014-12-17 | 2015-04-08 | 国家纳米科学中心 | Multiband terahertz filter and manufacture method of multiband terahertz filter |
| CN104678598A (en) * | 2015-03-31 | 2015-06-03 | 中国石油大学(华东) | Terahertz modulator, and preparation method and tuning method of terahertz modulator |
Non-Patent Citations (1)
| Title |
|---|
| 人工电磁超材料的电磁波调控特性;金飚兵 等;《南京大学学报（自然科学）》;20140531;第50卷(第3期);第235-253页 * |
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