CN108227243B - Silicon-based all-dielectric electronic control terahertz wave regulation and control device and preparation method thereof - Google Patents
Silicon-based all-dielectric electronic control terahertz wave regulation and control device and preparation method thereof Download PDFInfo
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a silicon-based all-dielectric electronic control terahertz wave regulation and control device and a preparation method thereof, wherein the silicon-based all-dielectric electronic control terahertz wave regulation and control device comprises a double-layer cylindrical silicon microstructure, a high-resistance silicon substrate, a silicon-doped interdigital electrode, a silicon dioxide nano-oxide layer and a vanadium dioxide film, wherein the double-layer cylindrical silicon microstructure is positioned on the upper side of the high-resistance silicon substrate, and the silicon-doped interdigital electrode, the silicon dioxide nano-oxide layer and the vanadium dioxide film are sequentially positioned on the lower side of the high-resistance silicon substrate from top to; in the invention, the semiconductor high-resistance silicon material is selected as the main dielectric material, so that the acquisition is easy, the cost is low and the semiconductor processing technology is mature; the device has high terahertz wave transmissivity, extremely low device insertion loss and large working bandwidth; an oxide insulating layer is introduced between the vanadium dioxide film and the doped silicon interdigital electrode, so that joule heat generated by current can be effectively inhibited, the switching speed of the device is further improved, and the device can be widely applied to the fields of terahertz wave detection, terahertz wave imaging and the like.
Description
Technical Field
The invention belongs to the technical field of terahertz wave application, and particularly relates to a silicon-based all-dielectric type electronic control terahertz wave regulating and controlling device and a preparation method thereof.
Background
Terahertz waves (terahertz waves) are electromagnetic wave spectra having a wave band between millimeter waves and infrared waves, a frequency of 0.1 to 10THz, and a wavelength of 30 μm to 3 mm. Has unique electromagnetic characteristics and occupies an important position in the electromagnetic spectrum. In recent years, terahertz science and technology are rapidly developed, the terahertz wave-based optical fiber has a leading advantage in the fields of wireless communication, detection imaging, electronic countermeasure, safety inspection, biomedical diagnosis, environmental monitoring and the like, has a very important application value, and has great significance for national economy and national defense construction. In the applications, the terahertz imaging and communication technology has been paid more and more attention, and the terahertz modulator is an essential key component in the system, and the quality of the modulation device directly affects the performance of the whole system.
Silicon-based terahertz modulators are widely concerned because they are compatible with existing semiconductor processes, such as documents: wen T, Zhang D, Wen Q, et al, enhanced Optical Modulation Depth of Terahertz Waves by Self-Assembled Monolayer of plasma Gold Nanoparticles [ J ]. Advanced Optical Materials,2016,4. A silicon-based terahertz modulator is proposed, but in these devices, due to the higher refractive index of the Si substrate, very large device loss is caused, the device insertion loss is as high as 3-5dB, and due to the adoption of the Optical control technology, the silicon-based terahertz modulator is incompatible with the existing high-integration electronic devices.
Vanadium dioxide (VO)2) Is a room temperature insulator-metal phase transition (MIT) material that undergoes a transition from an insulating phase to a metallic phase driven by heat, light or an electric field, and can typically have a conductivity that varies by an order of 3 to 5. When the vanadium dioxide is in an insulator phase, the vanadium dioxide has excellent transparent characteristic to terahertz waves, and the absorption and reflection loss is very small; when the terahertz wave is in the metal phase, the vanadium dioxide can generate strong reflection and partial absorption to the terahertz wave. Therefore, the amplitude control of the terahertz wave can be realized by utilizing the phase change of the vanadium dioxide film. However, with conventional thermal and optical driving methods, additional thermal and optical devices are required and cannot be integrated with the microelectronic systems currently in the mainstream. Although the electric driving mode solves the problem of electronic system compatibility, the adopted metal electrode has strong reflection effect on the terahertz wave and shows thatSignificantly increasing device insertion loss. More importantly, the VO is driven by adopting a conventional bias loading mode2The phase change results in a large accumulation of joule heat in the vanadium dioxide material, which limits the regulation speed of the vanadium dioxide material to less than 1Hz due to the slow heat dissipation process. These factors limit the practical application of vanadium dioxide as an effective terahertz modulator.
Therefore, it is necessary to develop a terahertz wave control device which is compatible with a semiconductor process and an existing high-integration electronic system, has low insertion loss, large control depth and high switching rate, and has an important value for promoting the development of practical application systems such as an existing terahertz imaging system.
Disclosure of Invention
The invention aims to provide a silicon-based all-dielectric electronic control terahertz wave regulating and controlling device and a preparation method thereof.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a silicon-based all-dielectric electronic control terahertz wave regulating device comprises a double-layer cylindrical silicon microstructure, a high-resistance silicon substrate, a doped silicon interdigital electrode, a silicon dioxide nano oxide layer and a vanadium dioxide film, wherein the double-layer cylindrical silicon microstructure is positioned on the upper side of the high-resistance silicon substrate, the doped silicon interdigital electrode, the silicon dioxide nano oxide layer and the vanadium dioxide film are sequentially positioned on the lower side of the high-resistance silicon substrate from top to bottom, and the whole device does not contain metal materials and metal structures; the double-layer cylindrical silicon micron structure layer on the upper side of the high-resistance silicon substrate plays a role in anti-reflection of terahertz waves, and the vanadium dioxide film structure layer on the lower side of the high-resistance silicon substrate plays a role in amplitude regulation and control of terahertz waves.
As a preferred mode, the double-layer cylindrical silicon microstructure, the doped silicon interdigital electrode and the silicon dioxide nano oxide layer in the whole device are all processed by the same high-resistance silicon substrate through standard semiconductor processes of etching, doping, oxidizing and photoetching.
As a preferred mode, the double-layer cylindrical silicon micron structure is a silicon-based double-layer cylinder periodic array which is arranged in multiple rows and multiple columns at equal intervals, the double-layer cylinders comprise upper-layer cylinders and lower-layer cylinders which are concentrically arranged below the upper-layer cylinders, the diameters of the upper-layer cylinders are smaller than those of the lower-layer cylinders, the diameters of the two-layer cylinders are smaller than or equal to 100 microns, and the total height of the two-layer cylinders is smaller than or equal to 100 microns.
As a preferred mode, the silicon-based double-layer cylindrical micron structure is directly processed from a high-resistance silicon substrate through a semiconductor process, and the silicon-based double-layer cylindrical micron structure and the high-resistance silicon substrate belong to the same high-resistance silicon material.
Preferably, the high-resistance silicon substrate is an intrinsic or high-resistance semiconductor Si material, the resistivity of the high-resistance silicon substrate is more than or equal to 3000 omega-cm, and the thickness of the high-resistance silicon substrate is between 200 and 600 mu m.
Preferably, the doped silicon interdigital electrode is formed by carrying out selective doping on a high-resistance silicon substrate, the conductivity of the doped silicon interdigital electrode is adjusted by controlling the doping concentration, the width of the doped silicon interdigital electrode is between 3 and 10 microns, and the thickness of the doped silicon interdigital electrode is between 50nm and 3 microns.
Preferably, the silicon dioxide nano-oxide layer is formed by oxidizing a high-resistance silicon substrate and a doped silicon interdigital electrode, and the thickness of the silicon dioxide nano-oxide layer is between 50nm and 100 nm.
Preferably, the thickness of the vanadium dioxide film is 100nm-500nm, the resistivity change before and after phase change reaches more than 3 orders of magnitude, and the sheet resistance of the film in the metal phase is less than or equal to 50 omega/port.
As a preferable mode, the insertion loss of the device in the ultra-wideband terahertz frequency band range exceeding 450GHz is less than or equal to 1.5dB, the regulation and control depth of the device reaches more than 76.5%, and the regulation and control speed is higher than 100 Hz.
In order to achieve the above object, the present invention further provides a method for preparing the silicon-based all-dielectric electronic control terahertz wave adjusting and controlling device, which comprises the following steps:
step 1, establishing a 3D model of a silicon-based double-layer cylindrical microstructure unit by utilizing CST Microwave Studio (simulation software), setting the total thickness of the model to be 500 mu m, and optimizing the radius r1 and r2 of double-layer cylinders, the height D1 and D2 of the cylinders and the distance p between the double-layer cylinders in the microstructure after setting boundary conditions and a solver to obtain the maximum transmissivity and working bandwidth;
step 2, cleaning the semiconductor silicon substrate: firstly, putting a silicon substrate into a beaker filled with acetone, ultrasonically cleaning for 15min, then ultrasonically cleaning for 15min by using alcohol, finally ultrasonically cleaning for 15min by using deionized water, blow-drying the cleaned silicon substrate by using nitrogen, and drying in an oven;
step 3, after designing and processing a mask plate according to the size of the designed microstructure, firstly putting a silicon substrate into a thermal oxidation furnace, growing a silicon dioxide mask layer with the thickness of 3 microns by adopting a dry oxygen oxidation method, then processing the silicon substrate by utilizing a semiconductor photoetching process and an ICP (inductively coupled plasma) etching technology, firstly manufacturing a large-size cylinder at the bottom layer, and then manufacturing a small-size cylinder at the top layer to form a double-layer stepped cylindrical microstructure;
step 4, preparing the doped silicon interdigital electrode: firstly, the SiO grown in the above step is selected2The layer is used as a barrier layer for thermal diffusion doping, then, electromagnetic simulation software CST Microwave Studio simulation is utilized, so that the transmission of the interdigital electrode to terahertz waves is not influenced, the line and line gap of the interdigital electrode after optimization are both 7um, the graph of the interdigital electrode is manufactured on the barrier layer by utilizing the photoetching technology, and then, the barrier layer is etched by a dry method to form a doping groove of the interdigital electrode; p is used as a heat diffusion source; introducing 1L/min nitrogen flow in the whole process of the pre-diffusion experiment, raising the temperature in the furnace to 850 ℃ in 50min, and feeding the substrate at the temperature; raising the temperature to 1000 ℃ within 15min, keeping the temperature at 1000 ℃ for 40min, then cooling to 850 ℃ within 30min, taking out the substrate, and finally removing the residual silicon dioxide barrier layer by using a BOE water bath method;
step 5, preparing a silicon dioxide insulating layer: the compactness is better by adopting a dry oxygen oxidation mode; raising the temperature in the furnace to 850 ℃ for 50min under a nitrogen flow of 1L/min, and feeding the substrate at the temperature; continuously heating, introducing oxygen at the flow rate of 1L/min, heating to 1000 deg.C after 15min, and maintaining for 30 min; then, cooling, reducing the temperature in the furnace to 850 ℃ within 30min, taking out the substrate, and testing to prepare silicon dioxide with the thickness of 50 nm; the step is also the re-diffusion after the pre-diffusion in the step, so that the prepared doped silicon interdigital electrode has better performance, and the measured sheet resistance of the electrode is 4 omega/port;
step 6, preparing a vanadium dioxide film: by utilizing a radio frequency magnetron sputtering method, the parameters of a high-purity metal vanadium target in a magnetron sputtering system are as follows: depositing a 200nm vanadium dioxide film on the silicon dioxide insulating layer under the conditions of 180w-220w of radio frequency power, 1Pa of working pressure, 4% -6% of oxygen argon flow ratio and 550 ℃ of heating temperature;
and 7, testing the terahertz transmission performance of the device by using the THz-TDS, wherein terahertz waves are incident from one side of the double-layer cylindrical microstructure, the voltage applied to the device is provided by a constant voltage source, the positive electrode and the negative electrode are connected to two ends of the interdigital electrode, and the THz-TDS system data is recorded immediately after the voltage is applied to the interdigital electrode.
The silicon-based double-layer cylindrical microstructure in the device is used for improving the regulation and control depth of the silicon-based vanadium dioxide terahertz regulator and solving the problem that the insertion loss of the original regulator substrate to terahertz waves is large. The core of the invention is that a semiconductor high-resistance silicon material is used as a substrate, and a silicon substrate is processed by utilizing semiconductor photoetching and ICP etching technologies to form a surface micron structure which has the function of increasing transmission of terahertz waves, so that the transmission amplitude of the terahertz waves can be greatly improved, and the transmission rate of the terahertz waves in a certain frequency band range can reach more than 85%; meanwhile, manufacturing a doped silicon interdigital electrode on the other surface of the substrate, and then preparing an oxide insulating layer and a vanadium dioxide core regulation nano layer. The all-dielectric device is used for solving the problem of compatibility with the existing microelectronic system, and simultaneously can inhibit the device from generating Joule heat. The terahertz modulator has the advantages of low insertion loss, large working bandwidth, large modulation depth, insensitivity to polarization in the incident terahertz wave direction and the like, and can be widely applied to terahertz imaging, detection and other systems.
In terms of working principle:
according to the bilateral device provided by the invention, the two functional layers are distributed on two sides of the high-resistance silicon substrate, one side of the bilateral device plays a role in anti-reflection of terahertz waves, the other side of the bilateral device plays a role in transmission regulation of terahertz waves, and the novel structure can simultaneously reduce insertion loss of the device and realize large-scale rapid regulation. In the structure of the invention, the substrate material is made of high-resistance silicon material because of the characteristics of easy acquisition, low cost and mature semiconductor process. Etching the silicon surface into a specific three-dimensional structure, changing the refractive index of the surface layer of the silicon substrate according to an equivalent refractive index model, forming a graded refractive index structure between air and the silicon substrate to form an anti-reflection component, and further increasing the transmission amplitude of terahertz waves; meanwhile, the regulating device adopts the doped silicon interdigital electrode to load voltage so as to be compatible with the microelectronic system process and reduce the terahertz wave loss caused by the conventional metal electrode; meanwhile, an insulating layer with good compactness is selected to inhibit the generation of joule heat; after voltage is loaded on the electrode of the device, an electric field is generated to control the vanadium dioxide film to change from an insulating phase to a metal phase, and incident terahertz waves are absorbed, so that the terahertz waves are regulated and controlled.
In conclusion, the invention has the advantages and effects that:
the invention provides a design theory and a preparation scheme of a silicon-based all-dielectric electronic control terahertz wave regulating and controlling device, which are based on an equivalent refractive index gradient anti-reflection theory. In the invention, the semiconductor high-resistance silicon material is selected as the substrate, so that the method is easy to obtain, low in cost and mature in semiconductor processing technology; and the technology for preparing the vanadium dioxide film is mature. Secondly, the device greatly improves the transmissivity to the terahertz waves, reduces insertion loss and has large working bandwidth; and an oxide insulating layer is introduced between the vanadium dioxide film and the doped silicon interdigital electrode, so that joule heat generated by current can be effectively inhibited, the regulation and control rate of the device is further improved, the purpose of the invention is achieved, and the method can be widely applied to the fields of terahertz wave communication systems, terahertz wave detection, terahertz wave imaging and the like.
Drawings
FIG. 1 is a three-dimensional schematic diagram of a structure of a silicon-based all-dielectric electronic control terahertz wave regulation device.
FIG. 2(a) is a diagram showing simulation results of a silicon-based double-layer cylindrical microstructure model and a bare silicon wafer model according to the present invention.
FIG. 2(b) is a diagram of experimental test results of silicon-based double-layer cylindrical microstructure samples and bare silicon wafers according to the present invention.
FIG. 3(a) is a graph showing the R-T thermal hysteresis loop of a vanadium dioxide thin film prepared directly on a silicon dioxide insulating layer used in the present invention
Figure 3(b) is an XRD pattern of a test of a vanadium dioxide thin film prepared directly on a silicon dioxide insulating layer used in the present invention.
Fig. 4 is an actual test time domain spectrum of the silicon-based all-dielectric electronic control terahertz wave regulating and controlling device.
FIG. 5 is a fitting graph of terahertz wave transmittance actually tested by the silicon-based all-dielectric electronic control terahertz wave regulating and controlling device.
FIG. 6 is a fitting graph of the maximum control depth of the terahertz wave in the practical test of the silicon-based all-dielectric electronic control terahertz wave control device.
The terahertz wave detector comprises a substrate, a double-layer cylindrical silicon micron structure 1, a high-resistance silicon substrate 2, a doped silicon interdigital electrode 3, a silicon dioxide nano oxide layer 4, a vanadium dioxide thin film 5 and incident terahertz waves 6.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
A silicon-based all-dielectric electronic control terahertz wave regulating and controlling device comprises a double-layer cylindrical silicon microstructure 1, a high-resistance silicon substrate 2, a doped silicon interdigital electrode 3, a silicon dioxide nanometer oxide layer 4 and a vanadium dioxide film 5, wherein the double-layer cylindrical silicon microstructure 1 is positioned on the upper side of the high-resistance silicon substrate 2, the doped silicon interdigital electrode 3, the silicon dioxide nanometer oxide layer 4 and the vanadium dioxide film 5 are sequentially positioned on the lower side of the high-resistance silicon substrate 2 from top to bottom, and the whole device does not contain metal materials and metal structures; the double-layer cylindrical silicon micron structure layer on the upper side of the high-resistance silicon substrate 2 plays a role in anti-reflection of terahertz waves, and the vanadium dioxide film 5 structure layer on the lower side of the high-resistance silicon substrate 2 plays a role in amplitude regulation and control of terahertz waves.
The double-layer cylindrical silicon microstructure 1, the doped silicon interdigital electrode 3 and the silicon dioxide nano oxide layer 4 in the whole device are all processed by the same high-resistance silicon substrate 2 through standard semiconductor processes of etching, doping, oxidizing and photoetching.
Double-deck cylindrical silicon micron structure 1 is the silicon-based double-deck cylinder cycle array according to multirow multiseriate equidistant range, and double-deck cylinder includes the cylinder on upper strata, the concentric lower floor cylinder that sets up in upper cylinder below, and the cylindrical diameter in upper strata is less than the cylindrical diameter in lower floor, and the diameter of two-deck cylinder all is less than or equal to 100 microns, and the overall height of two-deck cylinder is less than or equal to 100 microns.
The silicon-based double-layer cylindrical micron structure 1 is directly processed from a high-resistance silicon substrate 2 by a semiconductor process, and both belong to the same high-resistance silicon material.
The high-resistance silicon substrate 2 is an intrinsic or high-resistance semiconductor Si material, the resistivity of the high-resistance silicon substrate is more than or equal to 3000 omega-cm, and the thickness of the high-resistance silicon substrate is between 200 and 600 mu m.
The doped silicon interdigital electrode 3 is formed by carrying out selective doping on the high-resistance silicon substrate 2, the conductivity of the doped silicon interdigital electrode is adjusted by controlling the doping concentration, the width of the doped silicon interdigital electrode 3 is between 3 and 10 mu m, and the thickness of the doped silicon interdigital electrode is between 50nm and 3 mu m. .
The silicon dioxide nano oxide layer 4 is formed by oxidizing the high-resistance silicon substrate 2 and the doped silicon interdigital electrode 3, and the thickness of the silicon dioxide nano oxide layer is 50nm to 100 nm.
The thickness of the vanadium dioxide film 5 is 100nm-500nm, the resistivity change before and after phase change reaches more than 3 orders of magnitude, and the sheet resistance of the film in a metal phase is less than or equal to 50 omega/port.
The insertion loss of the device in the ultra-wideband terahertz frequency band range exceeding 450GHz is less than or equal to 1.5dB, the regulation and control depth of the device reaches more than 76.5%, and the regulation and control speed is higher than 100 Hz.
The preparation method of the silicon-based all-dielectric electric control terahertz wave regulation and control device comprises the following steps:
step 1, establishing a 3D model of a silicon-based double-layer cylindrical microstructure unit by utilizing CST Microwave Studio (simulation software), setting the total thickness of the model to be 500 mu m, and optimizing the radius r1 and r2 of double-layer cylinders, the height D1 and D2 of the cylinders and the distance p between the double-layer cylinders in the microstructure after setting boundary conditions and a solver to obtain the maximum transmissivity and working bandwidth;
step 2, cleaning the semiconductor silicon substrate: firstly, putting a silicon substrate into a beaker filled with acetone, ultrasonically cleaning for 15min, then ultrasonically cleaning for 15min by using alcohol, finally ultrasonically cleaning for 15min by using deionized water, blow-drying the cleaned silicon substrate by using nitrogen, and drying in an oven;
step 3, after designing and processing a mask plate according to the size of the designed microstructure, firstly putting a silicon substrate into a thermal oxidation furnace, growing a silicon dioxide mask layer with the thickness of 3 microns by adopting a dry oxygen oxidation method, then processing the silicon substrate by utilizing a semiconductor photoetching process and an ICP (inductively coupled plasma) etching technology, firstly manufacturing a large-size cylinder at the bottom layer, and then manufacturing a small-size cylinder at the top layer to form a double-layer stepped cylindrical microstructure;
step 4, preparing the doped silicon interdigital electrode: firstly, the SiO grown in the above step is selected2The layer is used as a barrier layer for thermal diffusion doping, then, electromagnetic simulation software CST Microwave Studio simulation is utilized, so that the transmission of the interdigital electrode to terahertz waves is not influenced, the line and line gap of the interdigital electrode after optimization are both 7um, the graph of the interdigital electrode is manufactured on the barrier layer by utilizing the photoetching technology, and then, the barrier layer is etched by a dry method to form a doping groove of the interdigital electrode; p is used as a heat diffusion source; introducing 1L/min nitrogen flow in the whole process of the pre-diffusion experiment, raising the temperature in the furnace to 850 ℃ in 50min, and feeding the substrate at the temperature; raising the temperature to 1000 ℃ within 15min, keeping the temperature at 1000 ℃ for 40min, then cooling to 850 ℃ within 30min, taking out the substrate, and finally removing the residual silicon dioxide barrier layer by using a BOE water bath method;
step 5, preparing a silicon dioxide insulating layer: the compactness is better by adopting a dry oxygen oxidation mode; raising the temperature in the furnace to 850 ℃ for 50min under a nitrogen flow of 1L/min, and feeding the substrate at the temperature; continuously heating, introducing oxygen at the flow rate of 1L/min, heating to 1000 deg.C after 15min, and maintaining for 30 min; then, cooling, reducing the temperature in the furnace to 850 ℃ within 30min, taking out the substrate, and testing to prepare silicon dioxide with the thickness of 50 nm; the step is also the re-diffusion after the pre-diffusion in the step, so that the prepared doped silicon interdigital electrode has better performance, and the measured sheet resistance of the electrode is 4 omega/port;
step 6, preparing a vanadium dioxide film: by utilizing a radio frequency magnetron sputtering method, the parameters of a high-purity metal vanadium target in a magnetron sputtering system are as follows: depositing a 200nm vanadium dioxide film on the silicon dioxide insulating layer under the conditions of 180w-220w of radio frequency power, 1Pa of working pressure, 4% -6% of oxygen argon flow ratio and 550 ℃ of heating temperature;
and 7, testing the terahertz transmission performance of the device by using the THz-TDS, wherein terahertz waves are incident from one side of the double-layer cylindrical microstructure, the voltage applied to the device is provided by a constant voltage source, the positive electrode and the negative electrode are connected to two ends of the interdigital electrode, and the THz-TDS system data is recorded immediately after the voltage is applied to the interdigital electrode.
The relevant test results are as follows:
fig. 2(b) is a graph of the transmittance of the silicon-based double-layer cylindrical microstructure designed according to the embodiment of the present invention, which shows that the transmittance of the structure reaches 85% or more in a certain frequency band, and is increased by 15% or more compared with a high-resistance bare silicon wafer with the same parameters, and the comparison with the simulation data of fig. 2(a) shows that the design expectation is reached.
FIG. 3 is a plot of the sheet resistance change of the vanadium dioxide film with temperature change and XRD showing that the film undergoes phase change at about 70 ℃ and the sheet resistance change exceeds 3 orders of magnitude; the XRD pattern shows that the film has good single crystal orientation.
And (3) carrying out data processing on the THz-TDS time domain spectrum 4 tested by the regulator finished product to obtain a transmissivity fitting graph of the device shown in FIG. 5 and a maximum regulation and control depth fitting graph of the device shown in FIG. 6. From the analysis of the actual test results of the final finished product, the vanadium dioxide film and SiO can be seen under the condition of no voltage loading2The insulating layer and the manufactured doped silicon interdigital electrode have no insertion loss to terahertz waves; with the increase of the loading voltage, the transmissivity of the terahertz wave is continuously reduced, when the voltage is increased to 3.5V, the transmissivity of the device to the terahertz wave is reduced to about 20 percent after the vanadium dioxide film is completely transformed from the insulating phase to the metal phase, and the terahertz wave passes through the vanadium dioxide filmThe calculation result shows that the regulation depth of the whole device can reach more than 76.5%, and the terahertz regulator provided by the invention has low insertion loss and very high regulation depth.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A silicon-based all-dielectric electronic control terahertz wave regulation and control device comprises a high-resistance silicon substrate (2), a doped silicon interdigital electrode (3) and a vanadium dioxide film (5), and is characterized in that: the silicon-doped high-resistance silicon device is characterized by further comprising a double-layer cylindrical silicon micron structure (1) and a silicon dioxide nano-oxide layer (4), wherein the double-layer cylindrical silicon micron structure (1) is located on the upper side of the high-resistance silicon substrate (2), the doped silicon interdigital electrode (3), the silicon dioxide nano-oxide layer (4) and the vanadium dioxide film (5) are sequentially located on the lower side of the high-resistance silicon substrate (2) from top to bottom, and the whole device does not contain metal materials and metal structures; the double-layer cylindrical silicon micron structure layer on the upper side of the high-resistance silicon substrate (2) plays a role in anti-reflection of terahertz waves, and the vanadium dioxide film (5) structure layer on the lower side of the high-resistance silicon substrate (2) plays a role in amplitude regulation and control of terahertz waves.
2. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the double-layer cylindrical silicon microstructure (1), the doped silicon interdigital electrode (3) and the silicon dioxide nanometer oxide layer (4) in the whole device are all processed by the same high-resistance silicon substrate (2) through standard semiconductor processes of etching, doping, oxidizing and photoetching.
3. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: double-deck cylindrical silicon micron structure (1) is the silicon-based double-deck cylinder cycle array according to multirow multiseriate equidistant range, and double-deck cylinder includes the concentric lower floor's cylinder that sets up in cylinder, the upper cylinder below on upper strata, and the cylindrical diameter in upper strata is less than the cylindrical diameter in lower floor, and the diameter of two-layer cylinder all is less than or equal to 100 microns, and the total height of two-layer cylinder is less than or equal to 100 microns.
4. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the silicon-based double-layer cylindrical micron structure (1) is directly processed from a high-resistance silicon substrate (2) through a semiconductor process, and the silicon-based double-layer cylindrical micron structure and the high-resistance silicon substrate belong to the same high-resistance silicon material.
5. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the high-resistance silicon substrate (2) is an intrinsic or high-resistance semiconductor Si material, the resistivity of the high-resistance silicon substrate is more than or equal to 3000 omega-cm, and the thickness of the high-resistance silicon substrate is between 200 and 600 mu m.
6. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the doped silicon interdigital electrode (3) is formed by carrying out selective doping on the high-resistance silicon substrate (2), the conductivity of the doped silicon interdigital electrode is adjusted by controlling the doping concentration, the width of the doped silicon interdigital electrode (3) is between 3 and 10 mu m, and the thickness of the doped silicon interdigital electrode is between 50 and 3 mu m.
7. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the silicon dioxide nano oxide layer (4) is formed by oxidizing the high-resistance silicon substrate (2) and the doped silicon interdigital electrode (3), and the thickness of the silicon dioxide nano oxide layer is 50nm to 100 nm.
8. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the thickness of the vanadium dioxide film (5) is 100nm-500nm, the resistivity change before and after phase change reaches more than 3 orders of magnitude, and the sheet resistance of the film in the metal phase is less than or equal to 50 omega/port.
9. The silicon-based all-dielectric electronic control terahertz wave regulation and control device of claim 1, characterized in that: the insertion loss of the device in the ultra-wideband terahertz frequency band range exceeding 450GHz is less than or equal to 1.5dB, the regulation and control depth of the device reaches more than 76.5%, and the regulation and control speed is higher than 100 Hz.
10. The preparation method of the silicon-based all-dielectric electronic control terahertz wave regulation and control device as claimed in any one of claims 1 to 9, characterized by comprising the following steps:
step 1, establishing a 3D model of a silicon-based double-layer cylindrical microstructure unit by utilizing CST Microwave Studio (simulation software), setting the total thickness of the model to be 500 mu m, and optimizing the radius r1 and r2 of double-layer cylinders, the height D1 and D2 of the cylinders and the distance p between the double-layer cylinders in the microstructure after setting boundary conditions and a solver to obtain the maximum transmissivity and working bandwidth;
step 2, cleaning the semiconductor silicon substrate: firstly, putting a silicon substrate into a beaker filled with acetone, ultrasonically cleaning for 15min, then ultrasonically cleaning for 15min by using alcohol, finally ultrasonically cleaning for 15min by using deionized water, blow-drying the cleaned silicon substrate by using nitrogen, and drying in an oven;
step 3, after designing and processing a mask plate according to the size of the designed microstructure, firstly putting a silicon substrate into a thermal oxidation furnace, growing a silicon dioxide mask layer with the thickness of 3 microns by adopting a dry oxygen oxidation method, then processing the silicon substrate by utilizing a semiconductor photoetching process and an ICP (inductively coupled plasma) etching technology, firstly manufacturing a large-size cylinder at the bottom layer, and then manufacturing a small-size cylinder at the top layer to form a double-layer stepped cylindrical microstructure;
step 4, preparing the doped silicon interdigital electrode: firstly, the SiO grown in the above step is selected2The layer is used as a barrier layer for thermal diffusion doping, then, electromagnetic simulation software CST Microwave Studio simulation is utilized, so that the transmission of the interdigital electrode to terahertz waves is not influenced, the line and line gap of the interdigital electrode after optimization are both 7um, the graph of the interdigital electrode is manufactured on the barrier layer by utilizing the photoetching technology, and then, the barrier layer is etched by a dry method to form a doping groove of the interdigital electrode; reuse of P as heatA diffusion source; introducing 1L/min nitrogen flow in the whole process of the pre-diffusion experiment, raising the temperature in the furnace to 850 ℃ in 50min, and feeding the substrate at the temperature; raising the temperature to 1000 ℃ within 15min, keeping the temperature at 1000 ℃ for 40min, then cooling to 850 ℃ within 30min, taking out the substrate, and finally removing the residual silicon dioxide barrier layer by using a BOE water bath method;
step 5, preparing a silicon dioxide insulating layer: the compactness is better by adopting a dry oxygen oxidation mode; raising the temperature in the furnace to 850 ℃ for 50min under a nitrogen flow of 1L/min, and feeding the substrate at the temperature; continuously heating, introducing oxygen at the flow rate of 1L/min, heating to 1000 deg.C after 15min, and maintaining for 30 min; then, cooling, reducing the temperature in the furnace to 850 ℃ within 30min, taking out the substrate, and testing to prepare silicon dioxide with the thickness of 50 nm; the step is also the re-diffusion after the pre-diffusion in the step, so that the prepared doped silicon interdigital electrode has better performance, and the measured sheet resistance of the electrode is 4 omega/port;
step 6, preparing a vanadium dioxide film: by utilizing a radio frequency magnetron sputtering method, the parameters of a high-purity metal vanadium target in a magnetron sputtering system are as follows: depositing a 200nm vanadium dioxide film on the silicon dioxide insulating layer under the conditions of 180w-220w of radio frequency power, 1Pa of working pressure, 4% -6% of oxygen argon flow ratio and 550 ℃ of heating temperature;
and 7, testing the terahertz transmission performance of the device by using the THz-TDS, wherein terahertz waves are incident from one side of the double-layer cylindrical microstructure, the voltage applied to the device is provided by a constant voltage source, the positive electrode and the negative electrode are connected to two ends of the interdigital electrode, and the THz-TDS system data is recorded immediately after the voltage is applied to the interdigital electrode.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1587996A (en) * | 2004-08-17 | 2005-03-02 | 浙江大学 | Photoconductive type ultraviolet detector |
| CN102393571A (en) * | 2011-11-09 | 2012-03-28 | 南开大学 | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed |
| CN103105686A (en) * | 2011-11-09 | 2013-05-15 | 南开大学 | Reflection type terahertz tunable polarization controller |
| CN104678598A (en) * | 2015-03-31 | 2015-06-03 | 中国石油大学(华东) | Terahertz modulator, and preparation method and tuning method of terahertz modulator |
| KR20160057950A (en) * | 2014-11-14 | 2016-05-24 | 삼육대학교산학협력단 | Terahertz wave modulator based on metamaterial |
-
2018
- 2018-01-19 CN CN201810054913.XA patent/CN108227243B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1587996A (en) * | 2004-08-17 | 2005-03-02 | 浙江大学 | Photoconductive type ultraviolet detector |
| CN102393571A (en) * | 2011-11-09 | 2012-03-28 | 南开大学 | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed |
| CN103105686A (en) * | 2011-11-09 | 2013-05-15 | 南开大学 | Reflection type terahertz tunable polarization controller |
| KR20160057950A (en) * | 2014-11-14 | 2016-05-24 | 삼육대학교산학협력단 | Terahertz wave modulator based on metamaterial |
| CN104678598A (en) * | 2015-03-31 | 2015-06-03 | 中国石油大学(华东) | Terahertz modulator, and preparation method and tuning method of terahertz modulator |
Non-Patent Citations (1)
| Title |
|---|
| 硅基二氧化钒薄膜制备在太赫兹开关器件方面的应用;熊瑛;《中国硕士学位论文基础科学辑》;20160331;正文第33页 * |
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