CN108227243A - Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof - Google Patents
Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof Download PDFInfo
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- CN108227243A CN108227243A CN201810054913.XA CN201810054913A CN108227243A CN 108227243 A CN108227243 A CN 108227243A CN 201810054913 A CN201810054913 A CN 201810054913A CN 108227243 A CN108227243 A CN 108227243A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 112
- 239000010703 silicon Substances 0.000 title claims abstract description 112
- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 230000033228 biological regulation Effects 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims abstract description 38
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000003780 insertion Methods 0.000 claims abstract description 13
- 230000037431 insertion Effects 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000002210 silicon-based material Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 241001269238 Data Species 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
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- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- 239000002105 nanoparticle Substances 0.000 description 1
- DUSYNUCUMASASA-UHFFFAOYSA-N oxygen(2-);vanadium(4+) Chemical group [O-2].[O-2].[V+4] DUSYNUCUMASASA-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention provides automatically controlled THz wave regulation and control device of a kind of silicon substrate all dielectric type and preparation method thereof, including double-deck cylindrical silicon micrometer structure, HR-Si substrate, doped silicon interdigital electrode, silica nanometer oxide layer and vanadium dioxide film, double-deck cylindrical silicon micrometer structure is located at the upside of HR-Si substrate, and doped silicon interdigital electrode, silica nanometer oxide layer, vanadium dioxide film are sequentially located at the downside of HR-Si substrate from top to bottom；Semiconductor high resistant silicon materials are chosen in the present invention as main medium material, it is ripe to obtain easy, at low cost and semiconducter process；This device has very high THz wave transmissivity and extremely low device Insertion Loss, while has big bandwidth of operation；It can effectively inhibit Joule heat caused by electric current, and then improve devices switch speed by introducing oxide insulating layer between vanadium dioxide film and doped silicon interdigital electrode, can be widely applied to the fields such as THz wave detection, THz wave imaging.
Description
Technical field
The invention belongs to THz wave applied technical field, specially a kind of automatically controlled THz wave regulation and control of silicon substrate all dielectric type
Device and preparation method thereof.
Background technology
THz wave (terahertz wave) be its wave band between millimeter wave and infrared waves, frequency is in 0.1-
10THz, wavelength are the electromagnetic spectrum in the range of 30 μm of -3mm.With unique electromagnetic property, in electromagnetic spectrum in occupation of
Critical positions.Terahertz science and technology is grown rapidly in recent years, wireless communication, detection imaging, electronic countermeasure,
The fields such as safety inspection, biomedical diagnostic and environmental monitoring play leading superiority, have very important application value, to state
People's economy and national defense construction are of great significance.In such applications, terahertz imaging and the communication technology are by increasingly
More people's concerns, and Terahertz modulator is essential critical component in its system, the quality for regulating and controlling device directly affects
To the performance quality of whole system.
Silicon substrate Terahertz modulator is widely paid close attention to, example because can be mutually compatible with existing semiconductor technology
Such as document：Wen T,Zhang D,Wen Q,et al.Enhanced Optical Modulation Depth of
Terahertz Waves by Self‐Assembled Monolayer of Plasmonic Gold Nanoparticles
[J] .Advanced Optical Materials, propose a kind of light-operated Terahertz modulator of silicon substrate in 2016,4., but this
In a little devices, since the refractive index of Si substrates is higher, cause very big device loss, device Insertion Loss is up to 3-5dB, Er Qieyou
It is not compatible with existing high integration electronic device in using light control techniques.
Vanadium dioxide (VO2) it is a kind of room temperature insulator-metal phase transition (MIT) material, it is in heat, light or electric field driven
Lower to occur from insulation mutually to the transformation of metal phase, conductivity can generally have the variation of 3 to 5 orders of magnitude.In insulator phase
When, vanadium dioxide has excellent transparent characteristic to THz wave, absorbs and reflection loss is very small；And during in metal phase,
Vanadium dioxide can generate THz wave very strong reflection and partially absorb.Therefore, using the phase transformation of vanadium dioxide film,
It can realize the amplitude regulation and control to THz wave.However, using traditional light and heat driving method, additional light and heat are needed
Device can not be integrated with the microelectronics system of current mainstream.And although solves electronic system compatibility using electric drive mode
Sex chromosome mosaicism, but used metal electrode has THz wave strong reflex, significantly increases device Insertion Loss.It is heavier
It wants, using conventional bias load mode driving VO2Phase transformation, and lead to a large amount of accumulation of Joule heat in vanadium dioxide material,
Since heat dissipation process is slow, which has limited it to regulate and control speed usually less than 1Hz.These factors, limiting vanadium dioxide and being used as has
The practical application of the Terahertz modulator of effect.
Therefore, development is a kind of can be mutually compatible with semiconductor technology and existing high integration electronic system, and has
The THz wave regulation and control device of relatively low Insertion Loss, big regulation and control depth and high switching rate is very necessary, for promotion
The development of the real application systems such as existing terahertz imaging system has important value.
Invention content
The purpose of the present invention is to provide automatically controlled THz wave regulation and control devices of a kind of silicon substrate all dielectric type and preparation method thereof.
For achieving the above object, technical solution of the present invention is as follows：
A kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type, including double-deck cylindrical silicon micrometer structure, High Resistivity Si
Substrate, doped silicon interdigital electrode, silica nanometer oxide layer and vanadium dioxide film, wherein double-deck cylindrical silicon micron knot
Structure is located at the upside of HR-Si substrate, and doped silicon interdigital electrode, silica nanometer oxide layer, vanadium dioxide film are from top to bottom
It is sequentially located at the downside of HR-Si substrate, entire device not metal-containing material and metal structure；Bilayer on the upside of HR-Si substrate
Cylindrical silicon micrometer structure layer plays the role of that THz wave is anti-reflection, and the vanadium dioxide film structure sheaf on the downside of HR-Si substrate then rises
To THz wave amplitude regulating and controlling effect.
It is preferred that double-deck cylindrical silicon micrometer structure, doped silicon interdigital electrode, silica in entire device
Nano-oxide layer be by same HR-Si substrate by etching, adulterating, aoxidizing, the processing of the standard semi-conductor processes of photoetching and
Into.
It is preferred that the bilayer cylindrical silicon micrometer structure is the silicon substrate bilayer equidistantly arranged by multiple rows of multiple row
Cylinder periodic array, lower floor's cylinder that double-deck cylinder includes the cylinder on upper strata, cylinder lower section in upper strata is arranged concentrically, upper strata cylinder
Diameter is less than the diameter of lower floor's cylinder, the diameter of two layers of cylinder≤100 microns, total height≤100 micron of two layers of cylinder.
It is preferred that the double-deck cylindrical micrometer structure of silicon substrate is direct from HR-Si substrate by semiconductor technology
It is process, the two belongs to same high resistant silicon materials.
It is preferred that the HR-Si substrate is intrinsic or high-resistance semi-conductor Si materials, resistivity >=3000
Ω .cm, thickness is between 200 μm~600 μm.
It is preferred that the doped silicon interdigital electrode to be formed by being adulterated to HR-Si substrate progress constituency,
Its conductive capability power is adjusted by controlling doping concentration, and the width of doped silicon interdigital electrode is between 3 μm -10 μm, thickness
Between 50nm to 3 μm.
It is preferred that the silica nanometer oxide layer is by HR-Si substrate and the interdigital electricity of doped silicon
Pole aoxidize, and thickness is between 50nm to 100nm.
It is preferred that the vanadium dioxide film thickness is 100nm-500nm, rear change in resistance reaches before phase change
It is more than 3 orders of magnitude, and the sheet resistance in metal phase≤50 Ω/mouth.
It is preferred that device Insertion Loss≤1.5dB in the range of the ultra wide band Terahertz frequency range more than 450GHz, device
Part regulation and control depth reaches more than 76.5%, and regulation and control speed is more than 100Hz.
For achieving the above object, the present invention also provides a kind of automatically controlled THz wave regulation and control of above-mentioned silicon substrate all dielectric type
The preparation method of device, including following steps：
Step 1, using electromagnetic simulation software CST Microwave Studio, establish silicon substrate bilayer cylindrical shaped microstructures list
First 3D models, model overall thickness is 500 μm, after setting boundary condition and solver, optimizes half of double-deck cylinder in micro-structure
The distance between diameter r1, r2, cylinder pillar height d1, d2, each bilayer cylinder p, to obtain maximum transmissivity and bandwidth of operation；
Step 2, cleaning semiconductor silicon substrate：Silicon chip is put into first in the beaker for fill acetone and is cleaned by ultrasonic 15min,
Then it reuses alcohol and is cleaned by ultrasonic 15min, be finally cleaned by ultrasonic 15min using deionized water, silicon chip after cleaning nitrogen again
Air-blowing is done, dry in baking oven；
Silicon chip after being designed according to designed microstructure size and processing mask plate, is put into thermal oxide by step 3 first
Stove grows the silicon dioxide mask layer of 3 μ m-thicks using dry-oxygen oxidation method, is then etched using semiconductor lithography process and ICP
Technology processes silicon substrate, first makes bottom large scale cylinder, then make top layer's small size cylinder, forms Double-ladder type cylinder
Micro-structure；
Step 4 prepares doped silicon interdigital electrode：The SiO grown in upper step is selected first2Layer does the resistance of thermal diffusion doping
Secondly barrier is emulated so that interdigital electrode is to the saturating of THz wave using electromagnetic simulation software CST Microwave Studio
No influence is penetrated, interdigital electrode line and lines gap are all 7um after being optimized, and make fork over the barrier layer using photoetching technique
Refer to the figure of electrode, then dry etching barrier layer forms the doping groove of interdigital electrode；P is reused as thermal diffusion source；Pre-
Whole process is passed through under 1L/min nitrogen streams during diffusion experiment, and in-furnace temperature is increased to 850 DEG C, and send at this temperature with 50min
Enter substrate；15min rises to 1000 DEG C, keeps 40min at 1000 DEG C, 850 DEG C are then cooled in 30min, take out substrate, most
Afterwards remaining silicon dioxide blocking layer is got rid of using BOE water bath Methods；
Step 5 prepares silicon dioxide insulating layer：By the way of dry-oxygen oxidation, compactness is more preferable；In 1L/min nitrogen streams
Temperature in stove will be risen to 850 DEG C by the lower time with 50min, and be sent into substrate at this temperature；Continue to heat up, change logical oxygen at this time
Gas rises to 1000 DEG C after flow 1L/min, 15min, keeps 30min；Then start to cool down, drop in-furnace temperature in 30min
To 850 DEG C, substrate is taken out, the silicon dioxide thickness prepared after tested is 50nm；This step is also simultaneously prediffusion in upper step
Spreading again afterwards, the doped silicon interdigital electrode performance being prepared is more preferable, measures electrode sheet resistance as 4 Ω/mouth；
Step 6 prepares vanadium dioxide film：Using radio frequency magnetron sputtering method, splashed by high purity vanadium metal target in magnetic control
Penetrate systematic parameter：Radio-frequency power 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, 550 DEG C of heating temperature item
Under part, the vanadium dioxide film of 200nm is deposited on silicon dioxide insulating layer；
Step 7 tests the Terahertz transmission performance of device using terahertz time-domain spectroscopy system THz-TDS, too
Hertz wave is provided by the incidence of double-deck cylindrical shaped microstructures side, device institute making alive by constant pressure source, and positive and negative anodes are connected to interdigital electricity
The both ends of pole after being added to required voltage, record THz-TDS system datas at once.
Silicon substrate bilayer cylindrical shaped microstructures are used to improve the regulation and control of silicon substrate vanadium dioxide type Terahertz modulator in the device
Depth and overcome the problems, such as that original modulator substrate is larger to the insertion loss of THz wave.The core of the present invention is using half
Conductor high resistant silicon materials do substrate, and silicon substrate is handled using semiconductor lithography and ICP etching techniques, is formed to Terahertz
Wave acts the surface micrometer structure for increasing transmission, THz wave transmission amplitude can be substantially improved, in certain band limits
Its transmissivity reaches more than 85%；Meanwhile doped silicon interdigital electrode is made in substrate another side, insulated by oxide is then prepared again
Layer and vanadium dioxide core regulate and control nanometer layer.The all dielectric device is mutually compatible with existing microelectronics system to solve the problems, such as,
May also suppress device leads to the problem of Joule heat simultaneously.The Terahertz modulator that the present invention realizes has insertion loss low, works
With roomy, regulation and control depth is big, it is insensitive to incident THz wave direction polarization the advantages that, can be widely used in terahertz imaging and
In the systems such as detection.
From operation principle：
Bilateral type device proposed by the present invention, two functional layers are distributed in HR-Si substrate both sides, and Terahertz is played in side
The antireflective effect of wave, other side then play the role of THz wave transmission regulation and control, this novel structure can reduce device simultaneously
Part Insertion Loss and realization significantly quick regulation and control.In structure of the present invention, substrate material select high resistant silicon materials be because obtain it is easy,
Semiconductor technology feature at low cost and ripe.Silicon face is etched into specific three dimensional stereochemical structure, according to equivalent refractive index mould
Type causes the refraction index changing on silicon substrate surface layer, and the anti-reflection component of graded index structure composition is formed between air and silicon substrate,
And then increase the transmission amplitude of THz wave；Simultaneously the present invention regulation and control device use doped silicon interdigital electrode on-load voltage be for
Compatible microelectronics system technique, and THz wave caused by reducing conventional metal electrode is lost；Select compactness good simultaneously
Good insulating layer inhibits the generation of Joule heat；Electric field controls vanadium dioxide film is generated after the device electrode on-load voltage from insulation
Phase change absorbs incident THz wave, so as to have the function that regulate and control THz wave to metal phase.
In conclusion advantages of the present invention and effect have：
Regulate and control the design theory of device the present invention provides a kind of automatically controlled THz wave of silicon substrate all dielectric type and prepare scheme,
It is according to the anti-reflection theory of equivalent refractive index gradual change.Semiconductor high resistant silicon materials are chosen in the present invention as substrate, obtain it is easy, into
This low and semiconducter process technology maturation；And the technology for preparing vanadium dioxide film is also more ripe.Secondly this device
The transmissivity to THz wave is substantially increased, reduces Insertion Loss and with big bandwidth of operation；And in vanadium dioxide film and
Oxide insulating layer is introduced between doped silicon interdigital electrode can effectively inhibit Joule heat caused by electric current, and then improve device tune
Rate controlling rate has reached purpose of the present invention, can be widely applied to THz wave communication system, THz wave detection, Terahertz
The fields such as wave imaging.
Description of the drawings
Fig. 1 is the schematic three dimensional views of the automatically controlled THz wave regulation and control device architecture of silicon substrate all dielectric type of the present invention.
Fig. 2 (a) is the simulation result figure of the double-deck cylindrical microstructure model of silicon substrate of the present invention and naked silicon chip model.
Fig. 2 (b) is the experimental results figure of the double-deck cylindrical microstructure sample of silicon substrate of the present invention and naked silicon chip.
Fig. 3 (a) is the vanadium dioxide film test R-T used in the present invention directly prepared on silicon dioxide insulating layer
Hysteresis cycle
Fig. 3 (b) is that the vanadium dioxide film used in the present invention directly prepared on silicon dioxide insulating layer is tested
XRD spectrum.
Fig. 4 is the actual test Time Domain Spectrum of the automatically controlled THz wave regulation and control device of silicon substrate all dielectric type of the present invention.
Fig. 5 is the actual test THz wave transmission of the automatically controlled THz wave regulation and control device of silicon substrate all dielectric type of the present invention
Rate fitted figure.
Fig. 6 is that the actual test THz wave of the automatically controlled THz wave regulation and control device of silicon substrate all dielectric type of the present invention is maximum
Regulate and control depth fitted figure.
Wherein, 1 is double-deck cylindrical silicon micrometer structure, and 2 be HR-Si substrate, and 3 be doped silicon interdigital electrode, and 4 be dioxy
SiClx nano-oxide layer, 5 be vanadium dioxide film, and 6 be incident THz wave.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
A kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type, including double-deck cylindrical silicon micrometer structure 1, High Resistivity Si
Substrate 2, doped silicon interdigital electrode 3, silica nanometer oxide layer 4 and vanadium dioxide film 5, wherein double-deck cylindrical silicon is micro-
Rice structure 1 is located at the upside of HR-Si substrate 2, doped silicon interdigital electrode 3, silica nanometer oxide layer 4, vanadium dioxide film
5 are sequentially located at the downside of HR-Si substrate 2 from top to bottom, entire device not metal-containing material and metal structure；HR-Si substrate 2
The double-deck cylindrical silicon micrometer structure layer of upside plays the role of that THz wave is anti-reflection, and the vanadium dioxide of 2 downside of HR-Si substrate is thin
5 structure sheaf of film then plays THz wave amplitude regulating and controlling effect.
Double-deck cylindrical silicon micrometer structure 1, doped silicon interdigital electrode 3 in entire device, silica nanometer oxide layer 4
Be by same HR-Si substrate 2 by etching, adulterating, aoxidizing, the standard semi-conductor processes of photoetching are process.
The bilayer cylindrical silicon micrometer structure 1 is the silicon substrate bilayer cylinder period battle array equidistantly arranged by multiple rows of multiple row
Row, the lower floor's cylinder being arranged concentrically below the cylinder of double-deck cylinder including upper strata, upper strata cylinder, under the diameter of upper strata cylinder is less than
The diameter of layer cylinder, the diameter of two layers of cylinder≤100 microns, total height≤100 micron of two layers of cylinder.
The double-deck cylindrical micrometer structure 1 of silicon substrate is directly process from HR-Si substrate 2 by semiconductor technology, two
Person belongs to same high resistant silicon materials.
The HR-Si substrate 2 is intrinsic or high-resistance semi-conductor Si materials, the Ω .cm of resistivity >=3000, and thickness exists
Between 200 μm~600 μm.
The doped silicon interdigital electrode 3 to be formed by being adulterated to the progress of HR-Si substrate 2 constituency, and conductive capability is strong
Weak to be adjusted by controlling doping concentration, the width of doped silicon interdigital electrode 3 is between 3 μm -10 μm, and thickness is at 50nm to 3 μm
Between..
The silica nanometer oxide layer 4 is by being aoxidized to HR-Si substrate 2 and doped silicon interdigital electrode 3
It forms, thickness is between 50nm to 100nm.
5 thickness of vanadium dioxide film be 100nm-500nm, before phase change after change in resistance reach 3 orders of magnitude with
On, and the sheet resistance in metal phase≤50 Ω/mouth.
Device Insertion Loss≤1.5dB in the range of the ultra wide band Terahertz frequency range more than 450GHz, device regulation and control depth reach
To more than 76.5%, regulation and control speed is more than 100Hz.
The preparation method of the automatically controlled THz wave regulation and control device of above-mentioned silicon substrate all dielectric type, including following steps：
Step 1, using electromagnetic simulation software CST Microwave Studio, establish silicon substrate bilayer cylindrical shaped microstructures list
First 3D models, model overall thickness is 500 μm, after setting boundary condition and solver, optimizes half of double-deck cylinder in micro-structure
The distance between diameter r1, r2, cylinder pillar height d1, d2, each bilayer cylinder p, to obtain maximum transmissivity and bandwidth of operation；
Step 2, cleaning semiconductor silicon substrate：Silicon chip is put into first in the beaker for fill acetone and is cleaned by ultrasonic 15min,
Then it reuses alcohol and is cleaned by ultrasonic 15min, be finally cleaned by ultrasonic 15min using deionized water, silicon chip after cleaning nitrogen again
Air-blowing is done, dry in baking oven；
Silicon chip after being designed according to designed microstructure size and processing mask plate, is put into thermal oxide by step 3 first
Stove grows the silicon dioxide mask layer of 3 μ m-thicks using dry-oxygen oxidation method, is then etched using semiconductor lithography process and ICP
Technology processes silicon substrate, first makes bottom large scale cylinder, then make top layer's small size cylinder, forms Double-ladder type cylinder
Micro-structure；
Step 4 prepares doped silicon interdigital electrode：The SiO grown in upper step is selected first2Layer does the resistance of thermal diffusion doping
Secondly barrier is emulated so that interdigital electrode is to the saturating of THz wave using electromagnetic simulation software CST Microwave Studio
No influence is penetrated, interdigital electrode line and lines gap are all 7um after being optimized, and make fork over the barrier layer using photoetching technique
Refer to the figure of electrode, then dry etching barrier layer forms the doping groove of interdigital electrode；P is reused as thermal diffusion source；Pre-
Whole process is passed through under 1L/min nitrogen streams during diffusion experiment, and in-furnace temperature is increased to 850 DEG C, and send at this temperature with 50min
Enter substrate；15min rises to 1000 DEG C, keeps 40min at 1000 DEG C, 850 DEG C are then cooled in 30min, take out substrate, most
Afterwards remaining silicon dioxide blocking layer is got rid of using BOE water bath Methods；
Step 5 prepares silicon dioxide insulating layer：By the way of dry-oxygen oxidation, compactness is more preferable；In 1L/min nitrogen streams
Temperature in stove will be risen to 850 DEG C by the lower time with 50min, and be sent into substrate at this temperature；Continue to heat up, change logical oxygen at this time
Gas rises to 1000 DEG C after flow 1L/min, 15min, keeps 30min；Then start to cool down, drop in-furnace temperature in 30min
To 850 DEG C, substrate is taken out, the silicon dioxide thickness prepared after tested is 50nm；This step is also simultaneously prediffusion in upper step
Spreading again afterwards, the doped silicon interdigital electrode performance being prepared is more preferable, measures electrode sheet resistance as 4 Ω/mouth；
Step 6 prepares vanadium dioxide film：Using radio frequency magnetron sputtering method, splashed by high purity vanadium metal target in magnetic control
Penetrate systematic parameter：Radio-frequency power 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, 550 DEG C of heating temperature item
Under part, the vanadium dioxide film of 200nm is deposited on silicon dioxide insulating layer；
Step 7 tests the Terahertz transmission performance of device using terahertz time-domain spectroscopy system THz-TDS, too
Hertz wave is provided by the incidence of double-deck cylindrical shaped microstructures side, device institute making alive by constant pressure source, and positive and negative anodes are connected to interdigital electricity
The both ends of pole after being added to required voltage, record THz-TDS system datas at once.
Dependence test result is as follows：
Fig. 2 (b) is that the double-deck cylindrical micrometer structure actual test of the silicon substrate designed by the specific embodiment of the present invention is saturating
Penetrate rate result figure, it can be seen that the structure transmissivity reaches more than 85% in certain frequency band, compared to the naked silicon chip of same parameter high resistant
More than 15% is increased, can be seen that with Fig. 2 (a) emulation data comparisons and reached expected design.
Fig. 3 is the sheet resistance change curve that the vanadium dioxide film prepared by the specific embodiment of the present invention varies with temperature
And XRD, show that the film is nearby undergone phase transition at 70 DEG C, sheet resistance changes more than 3 orders of magnitude；XRD spectrum shows film
Single-crystal orientation is good.
To the THz-TDS time domains collection of illustrative plates 4 that modulator finished product test of the present invention goes out, then carry out data processing and obtain Fig. 5
Device transmission fitting figure and Fig. 6 devices maximum regulation and control depth fitted figure.From the final finished actual test result point of the present invention
Analysis, it can be seen that in the case where being not loaded with voltage, vanadium dioxide film, SiO2Insulating layer and the doped silicon interdigital electrode made
To THz wave without insertion loss；With the increase of on-load voltage, the transmissivity of THz wave constantly reduces, when voltage is added to
3.5V, for vanadium dioxide film after insulation mutually mutually becomes metal phase completely, device drops to 20% to the transmissivity of THz wave
Left and right, can reach more than 76.5% by the regulation and control depth that entire device is calculated, shows Terahertz provided by the present invention
Modulator has low insertion loss and very high regulation and control depth.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought
All equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type, it is characterised in that：Including double-deck cylindrical silicon micron knot
Structure (1), HR-Si substrate (2), doped silicon interdigital electrode (3), silica nanometer oxide layer (4) and vanadium dioxide film
(5), wherein double-deck cylindrical silicon micrometer structure (1) is positioned at the upside of HR-Si substrate (2), doped silicon interdigital electrode (3), dioxy
SiClx nano-oxide layer (4), vanadium dioxide film (5) are sequentially located at the downside of HR-Si substrate (2), entire device from top to bottom
Not metal-containing material and metal structure；Double-deck cylindrical silicon micrometer structure layer on the upside of HR-Si substrate (2) plays THz wave
Anti-reflection effect, vanadium dioxide film (5) structure sheaf on the downside of HR-Si substrate (2) then play THz wave amplitude regulating and controlling effect.
2. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：Entirely
Double-deck cylindrical silicon micrometer structure (1) in device, doped silicon interdigital electrode (3), silica nanometer oxide layer (4) be by
Same HR-Si substrate (2) is by etching, adulterating, aoxidizing, the standard semi-conductor processes of photoetching are process.
3. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：It is described
Double-deck cylindrical silicon micrometer structure (1) is the silicon substrate bilayer cylinder periodic array equidistantly arranged by multiple rows of multiple row, double-deck cylinder
Cylinder including upper strata, the lower floor's cylinder being arranged concentrically below the cylinder of upper strata, the diameter of upper strata cylinder are less than the straight of lower floor's cylinder
Diameter, the diameter of two layers of cylinder≤100 microns, total height≤100 micron of two layers of cylinder.
4. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：Silicon substrate
Double-deck cylinder micrometer structure (1) is directly process from HR-Si substrate (2) by semiconductor technology, and the two belongs to same
A kind of high resistant silicon materials.
5. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：It is described
HR-Si substrate (2) is intrinsic or high-resistance semi-conductor Si materials, and the Ω .cm of resistivity >=3000, thickness is in 200 μm~600 μ
Between m.
6. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：It is described
Doped silicon interdigital electrode (3) to be formed by being adulterated to HR-Si substrate (2) progress constituency, and conductive capability power passes through control
Doping concentration processed is adjusted, and the width of doped silicon interdigital electrode (3) is between 3 μm -10 μm, thickness is between 50nm to 3 μm.
7. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：It is described
Silica nanometer oxide layer (4) be by HR-Si substrate (2) and doped silicon interdigital electrode (3) aoxidize,
Its thickness is between 50nm to 100nm.
8. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：It is described
Vanadium dioxide film (5) thickness is 100nm-500nm, and rear change in resistance reaches more than 3 orders of magnitude, and in gold before phase change
Sheet resistance≤50 Ω/mouth during symbolic animal of the birth year.
9. a kind of automatically controlled THz wave regulation and control device of silicon substrate all dielectric type according to claim 1, it is characterised in that：Super
Device Insertion Loss≤1.5dB in the range of the ultra wide band Terahertz frequency range of 450GHz is crossed, device regulation and control depth reaches more than 76.5%,
Regulate and control speed and be more than 100Hz.
10. the preparation method of the automatically controlled THz wave regulation and control device of silicon substrate all dielectric type described in claim 1 to 9 any one,
It is characterized by comprising following steps：
Step 1, using electromagnetic simulation software CST Microwave Studio, establish the double-deck cylindrical microstructure unit 3D of silicon substrate
Model, model overall thickness is 500 μm, after setting boundary condition and solver, optimizes the radius r1 of double-deck cylinder in micro-structure,
The distance between r2, cylinder pillar height d1, d2, each bilayer cylinder p, to obtain maximum transmissivity and bandwidth of operation；
Step 2, cleaning semiconductor silicon substrate：Silicon chip is put into first in the beaker for fill acetone and is cleaned by ultrasonic 15min, then
It reuses alcohol and is cleaned by ultrasonic 15min, be finally cleaned by ultrasonic 15min using deionized water, nitrogen is blown the silicon chip after cleaning again
It is dry, it is dry in baking oven；
Silicon chip after being designed according to designed microstructure size and processing mask plate, is put into thermal oxidation furnace by step 3 first,
The silicon dioxide mask layer of 3 μ m-thicks is grown using dry-oxygen oxidation method, then utilizes semiconductor lithography process and ICP etching techniques
Silicon substrate is processed, first makes bottom large scale cylinder, then make top layer's small size cylinder, forms the micro- knot of Double-ladder type cylinder
Structure；
Step 4 prepares doped silicon interdigital electrode：The SiO grown in upper step is selected first2Layer does the barrier layer of thermal diffusion doping,
Secondly it is emulated using electromagnetic simulation software CST Microwave Studio so that interdigital electrode is to the transmission of THz wave without shadow
It rings, interdigital electrode line and lines gap are all 7um after being optimized, and interdigital electrode is made over the barrier layer using photoetching technique
Figure, then dry etching barrier layer formed interdigital electrode doping groove；P is reused as thermal diffusion source；In prediffusion reality
Whole process is passed through under 1L/min nitrogen streams when testing, and in-furnace temperature is increased to 850 DEG C, and be sent into substrate at this temperature with 50min；
15min rises to 1000 DEG C, keeps 40min at 1000 DEG C, 850 DEG C are then cooled in 30min, take out substrate, finally use
BOE water bath Methods get rid of remaining silicon dioxide blocking layer；
Step 5 prepares silicon dioxide insulating layer：By the way of dry-oxygen oxidation, compactness is more preferable；It is used under 1L/min nitrogen streams
Temperature in stove is risen to 850 DEG C by the time of 50min, and is sent into substrate at this temperature；Continue to heat up, change logical oxygen at this time,
Flow is 1L/min, and 1000 DEG C are risen to after 15min, keeps 30min；Then start to cool down, drop to in-furnace temperature in 30min
850 DEG C, substrate is taken out, the silicon dioxide thickness prepared after tested is 50nm；This step simultaneously also for prediffusion in upper step after
Spread again, the doped silicon interdigital electrode performance being prepared is more preferable, measures electrode sheet resistance as 4 Ω/mouth；
Step 6 prepares vanadium dioxide film：Using radio frequency magnetron sputtering method, by high purity vanadium metal target in magnetron sputtering system
System parameter：Under conditions of radio-frequency power 180w-220w, operating air pressure 1Pa, oxygen argon flow-rate ratio 4%-6%, 550 DEG C of heating temperature,
The vanadium dioxide film of 200nm is deposited on silicon dioxide insulating layer；
Step 7 tests the Terahertz transmission performance of device using terahertz time-domain spectroscopy system THz-TDS, Terahertz
Wave is provided by the incidence of double-deck cylindrical shaped microstructures side, device institute making alive by constant pressure source, and positive and negative anodes are connected to interdigital electrode
Both ends after being added to required voltage, record THz-TDS system datas at once.
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