CN113933931A - Annular cavity optical modulator based on vanadium dioxide nanowire - Google Patents
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- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 34
- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 239000002070 nanowire Substances 0.000 title claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 239000002120 nanofilm Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 10
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 8
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000001066 destructive effect Effects 0.000 claims description 2
- 238000005485 electric heating Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 2
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- 238000004544 sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
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- 206010063385 Intellectualisation Diseases 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
- G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
- G02B6/29338—Loop resonators
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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Abstract
An annular cavity optical modulator based on a vanadium dioxide nanowire belongs to the technical field of optical modulators. The structure comprises the following structures: one side of the straight waveguide is a runway type resonant cavity, the other side of the straight waveguide is compounded with a layer of vanadium dioxide nano film, and the position of the vanadium dioxide nano film is positioned in a corresponding coupling area; further, the dimension of the vanadium dioxide nano film along the length direction of the straight waveguide is not larger than the corresponding dimension of the coupling area. The phase change response of the invention can reach the subpps magnitude and can relax back to the semiconductor phase at the ps magnitude.
Description
Technical Field
The invention belongs to the technical field of optical modulators, and particularly relates to an annular cavity optical modulator based on vanadium dioxide nanowires.
Background
With the rapid development of optical communication technology, an integrated optical interconnection network with high density integration, high reliability, intellectualization and low cost becomes the main development direction of an optical communication system, and optical interconnection instead of electrical interconnection becomes a necessary trend. The photonic device can break through the limit of moore's law, and has the advantages of saving power consumption and preventing frequency crosstalk while increasing data transmission quantity and transmission rate; the method can not only ensure the density of long-distance interconnection and the accuracy of data transmission, but also realize large-scale integration of ultra-small devices, and becomes a research hotspot at home and abroad at present.
The silicon-on-insulator (SOI) material has high refractive index difference, strong optical field local capacity and small bending loss of the waveguide, and is beneficial to preparing an ultra-small device structure. In addition, the material is compatible with the process, and the high-density integration, microminiaturization and batch production of the integrated photonic device can be realized. The optical resonant cavity based on the material has wide application in the main parts of integrated optical interconnection networks such as filtering, optical switch, modulator, detector and the like
More recently, based on vanadium dioxide (VO)2) The phase change principle for modulating the laser phase becomes a new idea for designing the optical modulator. Under thermal drive, VO2When the phase change of the metal-insulator is carried out at the temperature of about 68 ℃, and the phase change is accompanied by the change of the electronic structure and the crystal lattice structure, the corresponding optical characteristics such as refractive index and the like are correspondingly changed. VO (vacuum vapor volume)2The method also has the advantages of high energy conversion efficiency, extremely high phase change speed, good compatibility with the micro-processing technology, stable performance and the like.
Aiming at further optimizing the modulation rate of the silicon-based waveguide-based optical modulator is a research hotspot at home and abroad.
Disclosure of Invention
The method selects the runway type resonant cavity, compared with an annular resonant cavity, the coupling area is longer, the contact area with the vanadium dioxide nanowire is larger, and the change of the refractive index before and after the phase change of the vanadium dioxide can regulate and control the phase of light in the waveguide. Meanwhile, the nanowire is smaller in size, so that compared with a traditional phase change modulator, the power consumption is lower, and the modulation speed is higher.
An annular cavity optical modulator based on vanadium dioxide nanowires is characterized by comprising the following structures: one side of the straight waveguide is a runway type resonant cavity, the other side of the straight waveguide is compounded with a layer of vanadium dioxide nano film, and the position of the vanadium dioxide nano film is positioned in a corresponding coupling area; further, the dimension of the vanadium dioxide nano film along the length direction of the straight waveguide is not larger than the corresponding dimension of the coupling area.
The straight waveguide and the runway-type resonant cavity are made of Si, and a straight line part on one side of the runway-type resonant cavity adjacent to the straight waveguide is parallel to the straight waveguide with a distance.
The thickness of the vanadium dioxide nano film is 10-50 nm.
In order to facilitate subsequent testing, incident light is subjected to grating coupling, and a grating is designed on the waveguide. The grating period is 630nm, the duty ratio is 570:60, and the grating groove depth is 220 nm. In this manner, incident light is coupled into the waveguide at the surface of the structure by diffraction. The surface coupling method is one of the modes with the highest coupling efficiency in the current coupling modes of the silicon-based optical waveguide and the optical fiber.
The preparation method combines the vanadium dioxide nanowire with the runway-type resonant cavity to realize the optical modulator with low power consumption and high modulation rate.
(1) And processing a mask plate of the runway resonant cavity by using an electron beam exposure process.
(2) By utilizing an inductively coupled plasma etching technology, silicon is etched through chemical and physical reactions of plasma and an etched sample to form a runway type resonant cavity structure.
(3) Depositing a layer of vanadium dioxide on the carbon nano tube by utilizing a magnetron sputtering coating technology, transferring a vanadium dioxide nano wire to the other side of the straight waveguide corresponding to the coupling area part of the runway-type resonant cavity, and carrying out electric heating phase change by utilizing an external electrode.
The application comprises the following steps: incident light irradiates on the left side coupling grating, after the light is coupled into the straight waveguide, the light is transmitted in the straight waveguide and the runway type annular cavity, when the power is not on, namely the vanadium oxide nanowire does not have phase change, the light has no modulation effect, and at the moment, the light is output through the right side coupling grating. This time corresponds to an on in the switch. When the external power supply is connected, VO2Heating the phase change to cause the optical characteristics to change; at this time, VO2The refractive index changes, the spatial refractive index of the part in contact with the straight waveguide changes, and the phase of the light transmitted in the straight waveguide changesIs modulated. The light circulating in the ring cavity and the light modulated in the straight waveguide generate constructive and destructive interference, so that the transmittance of the light measured at the output end is greatly reduced, which is equivalent to off in a switch. After the external power supply is turned off, the vanadium oxide rapidly relaxes back to the semiconductor phase, which then returns to the on state of the switch, which is a cycle.
Compared with other vanadium oxide thin film light modulators integrated on the chip, the most obvious advantage of the invention is that vanadium dioxide nanowires are used for regulation and control, as shown in fig. 4. The vanadium oxide nanowire is formed by plating vanadium oxide on a carbon nanotube with the diameter of tens of nanometers, so that the volume is smaller compared with the traditional vanadium oxide film. I.e. a faster speed of the phase change means an increased modulation speed, while a smaller voltage, i.e. a lower energy consumption, is needed to initiate the phase change. An optical modulator with low power consumption and high modulation rate is realized.
The advantages and positive effects are as follows:
vanadium dioxide has several advantages over other two-dimensional materials.
(1) The phase change response can reach sub-ps magnitude.
(2) It is possible to relax back to the semiconductor phase in the ps order.
(3) The induced phase change mode is various.
(4) Fast on-chip device regulation is more easily achieved.
Drawings
FIG. 1 is a schematic diagram of a racetrack resonant cavity structure;
FIG. 2 is a ring cavity light modulator structure layout and SEM image.
Detailed Description
The present invention will be further illustrated with reference to the following examples, but the present invention is not limited to the following examples.
Example 1
The preparation method comprises the following steps:
(1) and manufacturing a runway type resonant cavity by adopting a micro-nano processing technology. The typical process flow comprises the steps of gluing, spin coating, electron beam exposure, development and fixation, reactive ion beam etching and preparation of a runway type resonant cavity.
(2) And depositing a vanadium dioxide film on the upper surface of the carbon nano tube by utilizing a magnetron sputtering method. Typical vanadium dioxide film conditions were 49.7sccm argon and 0.3sccm oxygen, a sputtering pressure of 0.55Pa, a sputtering power of 60W, and a sputtering time of 3 min. After sputtering is completed, the sample is placed in a furnace for annealing, typically under low pressure oxygen annealing (oxygen pressure 3 × 10)-2mbar), temperature 450 ℃, annealing time 10 min.
(3) Under a microscopic probe station, a single VO2And (5) transferring the nanowire to the lower part of the straight waveguide of the runway type resonant cavity to finish the preparation of the optical modulator.
A finite element analysis (COMSOL) method is used for simulating a structure, the cross section structure of the all-pass micro-ring structure is shown in figure 1 by using an SOI waveguide, the thickness of top layer Si is 220nm, the thickness of a buried oxide layer is 3 mu m, the width of a straight waveguide is 450nm, the radius of a runway micro-ring is 5 mu m, and the distance between the micro-ring and the straight waveguide is 100 nm. Coupling region 3 μm, lower VO2The length is 2 μm.
The transmission spectra of the optical modulator before and after the phase change are obtained for comparison, the modulation depth reaches 43 percent at a communication waveband of 1540nm, namely, the intensity of emergent light is changed by 43 percent, and the on-off contrast is 0.43.
Claims (6)
1. An annular cavity optical modulator based on vanadium dioxide nanowires is characterized by comprising the following structures: one side of the straight waveguide is a runway type resonant cavity, the other side of the straight waveguide is compounded with a layer of vanadium dioxide nano film, and the position of the vanadium dioxide nano film is positioned in a corresponding coupling area; further, the dimension of the vanadium dioxide nano film along the length direction of the straight waveguide is not larger than the corresponding dimension of the coupling area.
2. The vanadium dioxide nanowire-based ring cavity optical modulator of claim 1, wherein the straight waveguide and the racetrack resonator are made of Si, and a linear portion of the racetrack resonator on a side adjacent to the straight waveguide is spaced from the straight waveguide in parallel.
3. The vanadium dioxide nanowire-based ring cavity light modulator of claim 1, wherein the vanadium dioxide nanomembrane has a thickness of 10 to 50 nm.
4. The vanadium dioxide nanowire-based ring cavity optical modulator of claim 1, wherein a grating is designed on the waveguide for facilitating grating coupling of incident light during subsequent testing; the grating period is 630nm, the duty ratio is 570:60, and the grating groove depth is 220 nm.
5. The method for preparing the ring cavity optical modulator based on the vanadium dioxide nanowire, which is described in the claim 1, is characterized by comprising the following steps:
(1) and processing a mask plate of the runway resonant cavity by using an electron beam exposure process.
(2) Etching silicon by utilizing an inductively coupled plasma etching technology through chemical and physical reactions of plasma and an etched sample to form a runway type resonant cavity structure;
(3) depositing a layer of vanadium dioxide on the carbon nano tube by utilizing a magnetron sputtering coating technology, transferring a vanadium dioxide nano wire to the other side of the straight waveguide corresponding to the coupling area part of the runway-type resonant cavity, and carrying out electric heating phase change by utilizing an external electrode.
6. The application of the ring cavity optical modulator based on the vanadium dioxide nanowire as claimed in claim 1, wherein incident light irradiates on the left side coupling grating, after the light is coupled into the straight waveguide, the light is transmitted in the straight waveguide and the racetrack type ring cavity, when the vanadium oxide nanowire does not undergo phase change when the power is off, the light is not modulated, and then the light is output through the right side coupling grating. This time corresponds to an on in the switch. When the external power supply is connected, VO2Heating the phase change to cause the optical characteristics to change; at this time, VO2The refractive index changes, the spatial refractive index of the portion in contact with the straight waveguide changes, and the phase of the light propagating in the straight waveguide is modulated. The light circulating in the ring cavity and the light modulated in the straight waveguide produce constructive and destructive interference, so that the transmission of light is measured at the output endThe over rate is greatly reduced, which is equivalent to the switch-off of the switch; after the external power supply is turned off, the vanadium oxide rapidly relaxes back to the semiconductor phase, which then returns to the on state of the switch, which is a cycle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111000388.1A CN113933931B (en) | 2021-08-27 | Annular cavity light modulator based on vanadium dioxide nanowire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111000388.1A CN113933931B (en) | 2021-08-27 | Annular cavity light modulator based on vanadium dioxide nanowire |
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| Publication Number | Publication Date |
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| CN113933931A true CN113933931A (en) | 2022-01-14 |
| CN113933931B CN113933931B (en) | 2024-06-21 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115167014A (en) * | 2022-09-02 | 2022-10-11 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
| CN115639698A (en) * | 2022-12-07 | 2023-01-24 | 之江实验室 | C-waveband silicon waveguide micro-ring modulator based on phase-change material antimony sulfide and modulation method |
| CN115755271A (en) * | 2022-10-28 | 2023-03-07 | 广州市南沙区北科光子感知技术研究院 | VO (volatile organic compound) 2 Modulator of mixed silicon-based Fano resonance |
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| CN112526771A (en) * | 2020-11-11 | 2021-03-19 | 西北工业大学 | Molybdenum disulfide film assisted thermo-optic modulator |
| CN112952392A (en) * | 2021-01-26 | 2021-06-11 | 东南大学 | Terahertz digital programmable super surface for liquid crystal regulation and control |
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| CN101866066A (en) * | 2010-05-28 | 2010-10-20 | 浙江大学 | Phase change material-aid micro ring-based optical waveguide switch |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115167014A (en) * | 2022-09-02 | 2022-10-11 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
| CN115167014B (en) * | 2022-09-02 | 2022-11-22 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
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| CN115639698A (en) * | 2022-12-07 | 2023-01-24 | 之江实验室 | C-waveband silicon waveguide micro-ring modulator based on phase-change material antimony sulfide and modulation method |
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