CN115167014B - C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure - Google Patents
C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure Download PDFInfo
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- CN115167014B CN115167014B CN202211068789.5A CN202211068789A CN115167014B CN 115167014 B CN115167014 B CN 115167014B CN 202211068789 A CN202211068789 A CN 202211068789A CN 115167014 B CN115167014 B CN 115167014B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0113—Glass-based, e.g. silica-based, optical waveguides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
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- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure, which comprises an SOI substrate, wherein a convex structure is formed on a symmetrical axis along the length direction on the SOI substrate, the convex structure is a waveguide layer, the waveguide layer is a strip-shaped straight waveguide, the strip-shaped straight waveguide is divided into an input region waveguide, a composite region waveguide and an output region waveguide, a row of small holes etched above the composite region waveguide are filled with metamaterial structures, and the waveguide layer and the metamaterial structures are wrapped by silicon dioxide. The invention has the characteristics of small device size, high state switching speed and low energy consumption. The vanadium dioxide metamaterial structure is adopted, so that a small-size modulator can be realized; under the stimulation of different external energy, the refractive index of the phase-change material can be changed, the switching speed is extremely high, and the femtosecond-magnitude optical pulse can realize the rapid switching between states; under the condition of no external energy stimulation, the state can be maintained in the original state, and in a system with infrequent switching requirements, the power consumption can be greatly reduced.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a C-waveband silicon-based modulator based on a vanadium dioxide metamaterial structure.
Background
With the popularization and application of cloud computing, the internet of things and various intelligent terminals, people have larger and larger data demand, and the requirements on communication capacity, speed, energy consumption and the like of a communication system are higher and higher, so that the traditional communication technology cannot meet the requirement on mass data transmission gradually. Silicon photonics is benefited by the characteristics of high integration level, large bandwidth, low energy consumption, compatibility with CMOS technology and the like, has outstanding advantages in the aspects of high capacity, low energy consumption and low cost communication, is one of the most potential schemes for on-chip optical interconnection, and has a series of important progresses in recent years. However, with the current technology, there are still major challenges to achieve high performance devices and large scale integration, and one of the important reasons is that the silicon photonic devices, especially modulators, are large in size and difficult to achieve large scale integration.
Because of the limited range of index modulation of silicon under the carrier dispersion effect, conventional silicon-based modulators are large in size, typically requiring lengths on the order of millimeters. To solve the problem of miniaturization of silicon-based modulators, the size of the modulator can be reduced by enhancing the interaction of light and material, such as using high contrast dielectric materials, but the length of the active region still reaches hundreds of microns; the modulator may also be reduced in size by increasing the effective active length of the light and transmission medium, such as by using resonant structures to reduce device size, but with a narrower operating bandwidth.
Aiming at the problems, the invention designs a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure.
Disclosure of Invention
The invention aims to provide a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure, and solves the problem that in the prior art, the traditional silicon-based modulator based on a carrier dispersion effect has the problem that the large-scale integration is difficult to realize due to large device size.
The technical scheme adopted by the invention is as follows:
the utility model provides a C wave band silicon-based modulator based on vanadium dioxide metamaterial structure, includes the SOI base, be protruding structure on the symmetry axis along length direction on the SOI base, protruding structure is the waveguide layer, the waveguide layer is bar straight waveguide, bar straight waveguide divide into input region waveguide, composite region waveguide and output region waveguide, the downthehole packing of a row of apertures of composite region waveguide top sculpture has the metamaterial structure, the waveguide layer with the metamaterial structure is wrapped up by silicon dioxide.
Further, the protruding structure is top silicon of the SOI substrate and has a height of 220nm.
Further, the length of the waveguide in the composite region is 4-6 μm.
Furthermore, a row of small holes etched above the composite area waveguide are uniformly distributed and arranged on the central axis of the composite area waveguide in the length direction, the diameter of each small hole is 80nm-120nm, and the distance between every two adjacent small holes is 130nm-170nm.
Further, the metamaterial structure is a phase-change material vanadium dioxide.
Furthermore, the metamaterial structure is cylindrical, the upper surface of the cylindrical metamaterial structure is flush with the upper surface of the waveguide in the composite area, the metamaterial structure is used for forming the metamaterial structure, when different temperatures are applied to the metamaterial structure, the refractive index of the waveguide in the composite area where the metamaterial structure is located changes suddenly, and modulation of the transmission state of input light is achieved.
Further, the output end of the input area waveguide is connected with the input end of the composite area waveguide, the height and the width of the input area waveguide are equal to those of the composite area waveguide, and the input area waveguide is used for inputting light to be modulated in a C-band TM mode.
Furthermore, the input end of the output area waveguide is connected with the output end of the composite area waveguide, the height and width of the output area waveguide are equal to those of the composite area waveguide, and the output area waveguide is used for outputting optical signals.
The invention has the beneficial effects that:
1. the invention greatly reduces the size of the silicon-based modulator, and the traditional silicon-based modulator has larger size and usually needs millimeter-scale length due to the limited adjusting range of the refractive index of silicon under the carrier dispersion effect, which is not beneficial to the large-scale integration of the silicon-based modulator, while the invention adopts the vanadium dioxide metamaterial structure, thereby realizing the small-size modulator, and the waveguide length of a composite region for realizing the modulating function in the modulator is only about 5 microns.
2. The invention has the characteristics of small device size, high state switching speed and low energy consumption. Under the stimulation of different external energy, the refractive index of the phase-change material can be changed, the switching speed is very high, and the femtosecond-magnitude optical pulse can realize the rapid switching between states; under the condition of no external energy stimulation, the state can be maintained in the original state, and in a system with infrequent switching requirements, the power consumption can be greatly reduced.
Drawings
FIG. 1 is an overall schematic diagram of a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure according to the present invention;
FIG. 2 is a schematic top plan view of a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure according to the present invention;
FIG. 3 is a schematic cross-sectional view perpendicular to the optical transmission direction of a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure according to the present invention;
FIG. 4 is an electric field distribution simulation calculation result of the overall structure when vanadium dioxide is switched between two different states under input light of a C-band TM mode corresponding to a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure according to the present invention;
fig. 5 is a transmission rate simulation calculation result detected in an output region when vanadium dioxide is switched between two different states under input light of a C-band TM mode corresponding to a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure according to the present invention.
Description of the reference numerals
The waveguide structure comprises a 1-SOI substrate, a 2-waveguide layer, a 21-input region waveguide, a 22-composite region waveguide, a 23-output region waveguide and a 3-metamaterial structure.
Detailed Description
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, a C-band silicon-based modulator based on a vanadium dioxide metamaterial structure comprises an SOI substrate 1, wherein a protruding structure is formed on a symmetry axis along the length direction of the SOI substrate 1, the protruding structure is a waveguide layer 2, the waveguide layer 2 is a strip-shaped straight waveguide, the strip-shaped straight waveguide is divided into an input region waveguide 21, a composite region waveguide 22 and an output region waveguide 23, a row of small holes etched above the composite region waveguide 22 are filled with metamaterial structures 3, and the waveguide layer 2 and the metamaterial structures 3 are wrapped by silicon dioxide.
The protruding structure is the top silicon of the SOI substrate 1 and the height is 220nm.
The length of the composite region waveguide 22 is 4-6 μm.
A row of small holes etched above the composite area waveguide 22 are uniformly distributed and arranged on the central axis of the composite area waveguide 22 in the length direction, the diameter of each small hole is 80nm-120nm, and the distance between every two adjacent small holes is 130nm-170nm.
The metamaterial structure 3 is a phase-change material vanadium dioxide.
The metamaterial structure 3 is cylindrical, the upper surface of the cylinder is flush with the upper surface of the waveguide 22 in the composite area, and the metamaterial structure is used for forming a super-surface structure, when different temperatures are applied to the super-surface structure, the refractive index of the waveguide 22 in the composite area where the super-surface structure is located changes suddenly, and modulation of an input light transmission state is achieved.
The output end of the input area waveguide 21 is connected with the input end of the composite area waveguide 22, the height and the width of the input area waveguide 21 are equal to those of the composite area waveguide 22, and the input area waveguide 21 is used for inputting light to be modulated in a C-band TM mode.
The input end of the output area waveguide 23 is connected to the output end of the composite area waveguide 22, the height and width of the output area waveguide 23 are equal to those of the composite area waveguide 22, and the output area waveguide 23 is used for outputting optical signals.
The invention provides a C-waveband silicon-based modulator based on a vanadium dioxide metamaterial structure, which has the working principle that: vanadium dioxide is distinguished by a reversible metal-insulator transition behavior at the critical temperature, which brings a strong optical contrast from high transmittance to high reflectance, with a large variation in the dielectric constant for near-infrared light waves, while the optical properties of vanadium dioxide can be adjusted by heat, electricity, magnetism and strain. When the temperature of the device is lower than the critical temperature, the lattice structure of vanadium dioxide is a monoclinic insulating phase, the refractive index is 3.13+0.36i, and the light transmittance is higher; when the temperature of the device is close to the critical temperature, the lattice structure of vanadium dioxide is changed into a tetragonal metal phase from a monoclinic insulating phase, the refractive index is changed into 2.13+2.844i, and the light transmittance is reduced; meanwhile, the metamaterial structure consisting of 30 cylindrical vanadium dioxide structures strengthens the influence of refractive index change of vanadium dioxide in different states, so that the output light state can be effectively regulated and controlled.
In the structure of the present invention, when an input optical pulse is input from the input area waveguide 21, the optical pulse is modulated in the composite area waveguide 22, and a modulated signal is output from the output end of the output area waveguide 23.
In order to verify the effect of the present invention in practical application, the following simulation experiments are used for illustration:
the experiment adopts a finite difference time domain method for computational analysis, and key parameters used in the simulation experiment comprise: the width of the strip-shaped straight waveguide is 500nm, and the height of the strip-shaped straight waveguide is 220nm; the metamaterial structure 3 has a diameter of 100nm, a height of 70nm and a period of 150nm.
Referring to fig. 4-5, when the device temperature is lower than the critical temperature corresponding to the light input from the input area waveguide 21, the lattice structure of vanadium dioxide is a monoclinic insulating phase, the refractive index is 3.13+0.36i, the transmittance of light is high, and is greater than-2.5 dB at 1550nm, and the device is in an "on" state; when the temperature of the device is close to the critical temperature, the lattice structure of vanadium dioxide is changed into a tetragonal metal phase from a monoclinic insulating phase, the refractive index is changed into 2.13+2.844i, the transmittance of light is reduced, the transmittance is less than-10 dB at 1550nm, the device is in an off state, and the light modulation under different external conditions is realized.
In conclusion, the C-band silicon-based modulator based on the vanadium dioxide metamaterial structure provided by the invention can make up the defect that the adjusting range of the refractive index of a silicon material under the carrier dispersion effect is limited, the size of the silicon-based modulator is reduced, and meanwhile, the C-band silicon-based modulator has the characteristics of high switching speed and low energy consumption, and is beneficial to realizing large-scale integration of silicon-based optoelectronic devices.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A C-band silicon-based modulator based on a vanadium dioxide metamaterial structure is characterized by comprising an SOI substrate (1), wherein a protruding structure is arranged on a symmetrical axis of the SOI substrate (1) along the length direction, the protruding structure is a waveguide layer (2), the waveguide layer (2) is a strip-shaped straight waveguide, the strip-shaped straight waveguide is divided into an input region waveguide (21), a composite region waveguide (22) and an output region waveguide (23), a row of small holes etched above the composite region waveguide (22) are filled with metamaterial structures (3), and the waveguide layer (2) and the metamaterial structures (3) are wrapped by silicon dioxide;
the length of the composite region waveguide (22) is 4-6 mu m;
a row of small holes etched above the composite area waveguide (22) are uniformly distributed and arranged on the central axis of the composite area waveguide (22) in the length direction, the diameter of each small hole is 80nm-120nm, and the distance between every two adjacent small holes is 130nm-170nm;
the metamaterial structure (3) is made of phase-change material vanadium dioxide;
the metamaterial structure (3) is cylindrical, the upper surface of the cylindrical metamaterial structure is flush with the upper surface of the composite area waveguide (22) and used for forming the metamaterial structure, and when different temperatures are applied to the metamaterial structure, the refractive index of the composite area waveguide (22) where the metamaterial structure is located changes suddenly, so that the modulation of the transmission state of input light is realized.
2. The vanadium dioxide metamaterial structure-based C-band silicon-based modulator of claim 1, wherein the raised structures are top silicon of the SOI substrate (1) and have a height of 220nm.
3. The vanadium dioxide metamaterial structure-based C-band silicon-based modulator of claim 1, wherein an output end of the input-region waveguide (21) is connected to an input end of the composite-region waveguide (22), the input-region waveguide (21) and the composite-region waveguide (22) have the same height and width, and the input-region waveguide (21) is used for inputting light to be modulated by a C-band TM mode.
4. The vanadium dioxide metamaterial structure-based C-band silicon-based modulator of claim 1, wherein an input end of the output region waveguide (23) is connected to an output end of the recombination region waveguide (22), the output region waveguide (23) and the recombination region waveguide (22) have the same height and width, and the output region waveguide (23) is used for outputting optical signals.
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