CN113253537B - Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material - Google Patents

Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material Download PDF

Info

Publication number
CN113253537B
CN113253537B CN202110543228.5A CN202110543228A CN113253537B CN 113253537 B CN113253537 B CN 113253537B CN 202110543228 A CN202110543228 A CN 202110543228A CN 113253537 B CN113253537 B CN 113253537B
Authority
CN
China
Prior art keywords
interference
differentiator
waveguide
directional coupler
mach
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110543228.5A
Other languages
Chinese (zh)
Other versions
CN113253537A (en
Inventor
胡国华
孙耀辉
汪冬宇
邓春雨
孙彧
恽斌峰
崔一平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN202110543228.5A priority Critical patent/CN113253537B/en
Publication of CN113253537A publication Critical patent/CN113253537A/en
Application granted granted Critical
Publication of CN113253537B publication Critical patent/CN113253537B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material, which comprises a 2 x 2 directional coupler prepared based on the SOI material, two interference arms with different lengths, a 2 x 1 multimode interference coupler (MMI) and a hot electrode above a coupling area of the directional coupler. The directional coupler divides the modulated input light into two beams in certain proportion, the interference arms with different lengths enable the input light to form pi phase difference at the outlet of the interference arm, and then destructive interference is formed through MMI to complete differential operation of the input light. The thermode loads an electric signal, and the interference intensity change of input light at the working wavelength is realized by changing the splitting ratio of the output end of the directional coupler, so that the differential order of the differentiator is adjusted.

Description

Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material.
Background
Due to the limitation of the manufacturing process, the development speed of the electronic chip is gradually slowed down, the integration number of the transistors is increased and slowed down, and the problems of power consumption, noise, crosstalk and the like are increasingly obvious. Compared with electrical signal processing, the optical signal processing has the advantages of large bandwidth, high transmission speed, electromagnetic interference resistance and rich multiplexing modes, and the all-optical processing can be matched with the optical fiber transmission rate, so that the data processing rate is improved, and the conversion cost and the maintenance cost of the prior signal processing optical-electrical-optical are effectively reduced.
SOI (Silicon on Insulator) benefits from a large difference in refractive index between Silicon and Silicon dioxide so that optical signals can be well confined in Silicon, and Silicon has a thermo-optic coefficient on the same order as that of polymer, and is well suited as a waveguide material. The SOI has the advantages of small bending loss, mature manufacturing process, low manufacturing cost, compatibility with CMOS (complementary metal oxide semiconductor) process and the like, and is favorable for the miniaturization of waveguide devices and the large-scale integration.
In order to realize all-optical processing, basic calculation modules aiming at optics, such as an optical time-domain integrator, an optical time-domain differentiator, an optical Fourier transformer and the like, need to be designed. The optical time-domain differentiator is one of components of optical calculation, can be used for optical calculation, pulse coding, pulse shaping and the like, and can realize more complex calculation by combining with other components. The SOI is provided with an auxiliary heating electrode, so that the temperature of the waveguide can be changed, the effective refractive index of a mode in the waveguide is further changed, and the change of the optical amplitude and the phase is realized.
In order to realize on-chip integration, optical time domain differentiator schemes based on silicon-based micro-ring resonators (MRR), silicon-based bragg gratings, silicon-based photonic crystal resonators, silicon-based Mach-Zehnder interferometers (MZI), and self-coupled waveguides (SCOW) are proposed in succession. The MRR and MZI types are more common. The MRR type differentiator has high integration level and accurate differentiation result, but has smaller working bandwidth and is difficult to deal with high-speed signal processing; the MZI type differentiator has simple working principle, relatively large working bandwidth and relatively low integration level.
For an adjustable MZI type differentiator, the principle is to change the splitting ratio of an upper interference arm and a lower interference arm so as to realize the change of the final interference depth and the phase change. The general solution is to achieve a difference in the intensity of the outgoing light of the two arms by introducing extra losses in one arm, which results in a large waste of energy. And the introduced loss is necessarily based on the change of the refractive index of the waveguide, which causes the working wavelength of the differentiator to have large deviation, and the carrier frequency of the input light needs to be adjusted every time, thereby influencing the practicability of the differentiator.
Disclosure of Invention
The invention discloses a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material, and provides a simple and effective MZI type optical differentiator scheme aiming at an MZI type optical time domain differentiator with adjustable order.
In order to achieve the aim, the technical scheme of the invention is as follows:
a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator based on SOI material preparation comprises SiO 2 Cladding of said SiO 2 A waveguide layer horizontally arranged is arranged in the cladding layer and is prepared from a Si material;
the waveguide layer includes: the device comprises a directional coupler, two interference arms with different lengths and a multimode interference coupler, wherein the directional coupler, the interference arms and the multimode interference coupler are sequentially cascaded to form a Mach-Zehnder interferometer;
an upper port Input A of the Input end of the directional coupler is the Input end of the differentiator, and an Output port Output of the multimode interference coupler is the Output end of the differentiator; a hot electrode is arranged right above the coupling area of the directional coupler, and the width of the hot electrode covers the whole coupling area and the surrounding partial area; siO is arranged between the hot electrode and the directional coupler 2 As a buffer layer.
Further, the directional coupler includes two input straight waveguides, four curved waveguides, two coupling straight waveguides, and a transition waveguide transitioning from the ridge waveguide to the strip waveguide, where the two coupling straight waveguides form a coupling region C1 with a distance. Further, the coupling distance of the directional coupler is adjusted according to the modulation efficiency of the modulation system, and if the modulation system has a low level of modulation on the waveguide refractive index, that is, the achievable refractive index change range is small, the coupling distance of the directional coupler is reduced to improve the sensitivity of the splitting ratio on the refractive index change.
Further, the interference arm is a strip waveguide comprising eight quarter-ring waveguides with the radius of 15 μm and an interference arm straight waveguide for adjusting the optical path difference.
Furthermore, the length difference of the two interference arms is determined by the requirement for the operating wavelength of the differentiator, that is, after the operating wavelength of the differentiator is determined, the length difference of the two interference arms is designed so that the light at the operating wavelength is inverted after passing through the interference arms.
Further, the multi-mode interference coupler comprises three straight waveguides, three Taper type waveguides for reducing propagation loss and a multi-mode interference cavity.
Further, an upper arm of an output end of the directional coupler is connected with an upper arm of an input end of the interference arm through a transition waveguide, and a lower arm of the output end of the directional coupler is connected with a lower arm of the input end of the interference arm through a transition waveguide; the upper arm of the output end of the interference arm is connected with the upper arm of the input end of the multimode interference coupler through a Taper-type waveguide, and the lower arm of the output end of the interference arm is connected with the lower arm of the input end of the multimode interference coupler through a Taper-type waveguide.
Further, the thickness of the waveguide layer is 220nm, the directional coupler is a ridge waveguide, and the etching depth is 150nm; the interference arm and the multimode interference coupler are strip waveguides, and the cross section of each waveguide is 500nm multiplied by 220nm.
Further, a varying voltage is applied across the hot electrode to effect a proportional change in the optical power output by the directional coupler section to adjust the order of differentiation of the final output of the differentiator.
Further, under the no-modulation condition, the optical power ratio at the operating wavelength of the transmission port a and the coupling port B output from the directional coupler should be less than 1, so as to ensure that the differential order under the no-modulation condition is less than 1.
The invention has the beneficial effects that:
the invention provides a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material. The two light beams in opposite phase will then form destructive interference around the carrier frequency in a multimode interference coupler (MMI) where the extinction ratio is greatest, completing the differentiation operation on the input optical field. The two-port splitting ratio is changed by modulating the directional coupler, so that the adjustment of the differential order is realized.
Compared with a common MZI-based adjustable differentiator, the MZI-based adjustable differentiator does not enlarge the occupied area, but ensures the stability of the working wavelength to reduce the cost of additionally introducing wavelength conversion, and reduces the waste of input optical energy. Compared with an MRR-based adjustable differentiator, the scheme can process large signal bandwidth and can process high-speed input information.
Moreover, the manufacturing process of the invention is compatible with CMOS, and has the potential characteristics and advantages of high response speed, low transmission loss and low power consumption.
Drawings
FIG. 1 is a schematic three-dimensional structure of the present invention.
FIG. 2 is a schematic top view of a waveguide according to the present invention; (a) a diagram of a monolithic waveguide model; (b) a directional coupler section; (c) an interference arm portion; (d) a multimode interference coupler section.
FIG. 3 is a partial cross-sectional schematic view of a thermode of the present invention.
FIG. 4 is a spectrum of an output port without applied power (incident from Input A for example) according to the present invention; (a) an amplitude-frequency response curve; and (b) phase frequency response curve.
FIG. 5 is a graph of the integral order differential (1 st order) and high order differential (greater than 1 st order, less than 2 nd order) differential results spectra of the present invention; (a) an amplitude-frequency response curve; and (b) phase frequency response curve.
FIG. 6 is a time domain representation of the differentiation results of three differentiation orders of the present invention.
FIG. 7 is a graph of the variation of applied power versus waveguide temperature according to the present invention.
1. A directional coupler; 2. an interference arm; 3. a multimode interference coupler; 4. a thermode; 5. SiO 2 2 A cladding layer;
1-1, input straight waveguide; 1-2, bending the waveguide; 1-3, coupling straight waveguide; 1-4, transition waveguide; 2-1, quarter-ring waveguide; 2-2, an interference arm straight waveguide; 3-1, straight waveguide; 3-2, taper type waveguide; 3-3, multimode interference cavity.
Detailed Description
The present invention will be further illustrated with reference to the accompanying drawings and specific embodiments, which are to be understood as merely illustrative of the invention and not as limiting the scope of the invention. It should be noted that, as used in the following description, the terms "front", "back", "left", "right", "up" and "down" refer to directions in the drawings, and the terms "inner" and "outer" refer to directions toward and away from, respectively, the geometric center of a particular component.
As shown in FIG. 1 and FIG. 2 (a), the present invention designs a Mach-Zehnder interferometer type adjustable fractional order optical field differentiator based on SOI material preparation, wherein the waveguide layer is embedded in SiO 2 A Si waveguide in the cladding (5), the thickness of the waveguide layer being 220nm;
the main components comprise: a directional coupler 1, two waveguide interference arms 2 of different lengths and a multimode interference coupler 3.
As shown in fig. 2 (b), the directional coupler 1 is a ridge waveguide process, and the etching depth is 150nm, and includes: two input straight waveguides 1-1, four curved waveguides 1-2, two coupling straight waveguides 1-3 and transition waveguides 1-4 for transition from ridge waveguide to strip waveguide. The two coupling straight waveguides 1-3 form a coupling region C1 with a distance, the Input ports of the directional coupler 1 (i.e., the Input ports of the differentiator) are Input a and Input B, and only one of the ports is used in actual operation. The coupling distance of the directional coupler 1 is adjusted according to the modulation efficiency of the modulation system, and if the modulation system has a low modulation level for the waveguide refractive index, that is, the achievable refractive index change range is small, the coupling distance of the directional coupler 1 is reduced to improve the sensitivity of the splitting ratio for the refractive index change.
As shown in fig. 2 (c), the interference arm 2 is a strip waveguide process, which includes: eight quarter-ring waveguides 2-1 (only 1 is labeled for clarity in the figure) of radius 15 μm, and an interference arm straight waveguide 2-2 for adjusting the optical path difference. The length difference of the two interference arms 2 is determined by the requirement for the operating wavelength of the differentiator, i.e. after the operating wavelength of the differentiator is determined, the length difference of the two interference arms 2 is designed so that the light at the operating wavelength is inverted after passing through the interference arms 2.
As shown in fig. 2 (d), the multi-mode interference coupler 3 is a slab waveguide process, and includes three straight waveguides 3-1, three Taper waveguides 3-2 for reducing propagation loss, and a multi-mode interference cavity 3-3. The interference arm 2 and the multi-mode interference coupler 3 are strip waveguides, and the cross section of each waveguide is 500nm multiplied by 220nm.
As shown in FIG. 1, a square TiN hot electrode 4 is arranged right above the coupling region of the directional coupler 1, and the proportional change of the optical power output by the directional coupler 1 is realized by applying voltage to two ends of the hot electrode 4 to change the electrode temperature, so as to adjust the differential order of the final output of the differentiator. Under the no-modulation condition, the optical power ratio at the operating wavelength of the transmission port a and the coupling port B output from the directional coupler should be less than 1. FIG. 3 shows a cross-sectional view of the hot electrode 4, and SiO is provided between the waveguide layer and the hot electrode 4 2 A cladding layer (buffer layer) 5.
The differentiator principle of the structure of the invention is as follows: for a Mach-Zehnder interferometer, two beams of opposite-phase light will destructively interfere, an approximately linear amplitude-frequency response curve appears on a frequency spectrum, the wave reaches the lowest point at a carrier wave, and pi phase jump is carried out on phase-frequency response at a carrier frequency and is combined with a transmission function of an ideal differentiator, so that a first-order differentiation function can be realized; for the fractional order differentiator, the accuracy of phase response is better emphasized, and amplitude-frequency response does not need to be completely consistent, so that the phase response of the fractional order differentiator can be realized by adjusting the intensity difference of two beams of light of the Mach-Zehnder interferometer.
Under the structure of the invention, input light carrying signals enters a directional coupler 1 from an Input A, and is split through a coupling area C1, the ratio of coupling energy to passing energy is larger than 1 under the condition of no modulation so as to realize differential calculation smaller than 1 order, two beams of light are in opposite phase after passing through an interference arm 2, and then destructive interference is carried out in a multimode interference coupler 3 so as to complete low-order differential calculation, and the Output is Output from the Output. The temperature of the hot electrode 4 can be changed by applying voltage to the two ends of the hot electrode 4, so that the temperature of the coupling area of the directional coupler 1 is changed, namely the effective refractive index of the waveguide is changed, the splitting ratio of the directional coupler 1 is changed (the ratio of coupling energy to passing energy is gradually reduced), the coupling order of the differentiator can be increased, and the adjustable function of the optical differentiator is realized.
In order to verify that the present invention can realize the function, a verification example will be specifically described.
The verification example is a time domain finite difference method for calculation and analysis, and the main parameters used in simulation calculation are as follows: the width of the section of the strip waveguide is 500nm, and the height of the section of the strip waveguide is 220nm; etching depth of the ridge waveguide is 150nm; the thermo-optic coefficients of silicon and silicon dioxide are 1.84X 10 respectively -4 And 1X 10 -5 (ii) a For the directional coupler 1, the length of a coupling straight waveguide 1-3 is 6.5 mu m, the coupling distance is 200nm, the x-direction distance of the center of a left port and a right port of a bent waveguide 1-2 is 10 mu m, the y-direction distance is 2 mu m, and the transition region from a ridge waveguide to a strip waveguide is 10 mu m; the length of the interference arm straight waveguide is 2-2 and is 123.32 mu m; the Taper-type waveguide 3-2 of the MMI has the length of 10 μm, the multi-mode interference cavity 3-3 has the length of 59 μm and the width of 8 μm.
Taking the case of light incident from Input a as an example, the amplitude-frequency and phase-frequency curves of the output port are calculated and obtained as shown in fig. 4 (a) and (b), respectively. The operating wavelength of the differentiator is 1553.56nm, depending on the design. It can be seen that the differentiator realizes differentiation processing at 1553.56nm, the order of differentiation is less than 1, and the working bandwidth is about 1.3 nm. By applying modulation, the frequency response of the differentiator changes accordingly, as shown in fig. 5 (a), (b), where the solid line is the differentiation result of order 1 and the dashed line is the differentiation result of higher order, the function of the tunable differentiator can be illustrated.
The time domain characteristic of the invention is shown in fig. 6, wherein the dark solid line is the low-order differential result, the light solid line is the 1-order differential result, and the dotted line is the high-order differential result, and the functionality and the adjustability of the differentiator are also verified.
Fig. 7 shows the waveguide temperature change amount corresponding to different power consumptions, and it can be seen that the waveguide temperature change amount corresponding to the consumed electric power is approximately in a direct proportion, the proportionality coefficient is about 3.05K/mW, and the approximately linear formant shift can be better used for controlling the differential order.
In conclusion, the Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on the SOI material can directly realize differential calculation processing of different differential orders on optical signals, has large working bandwidth and stable working wavelength, wastes little energy of input signals, and can be better added with all-optical processing. Meanwhile, the method has the potential characteristics and advantages of simple manufacture, compatibility with CMOS and low power consumption.
The technical means disclosed in the invention scheme are not limited to the technical means disclosed in the above embodiments, but also include the technical scheme formed by any combination of the above technical features.

Claims (8)

1. A Mach-Zehnder interferometer type adjustable fractional order optical field differentiator based on SOI material preparation comprises SiO 2 A cladding (5), characterized in that: the SiO 2 A waveguide layer horizontally arranged is arranged in the cladding layer (5), and the waveguide layer is prepared from a Si material;
the waveguide layer includes: the device comprises a directional coupler (1), two interference arms (2) with different lengths and a multimode interference coupler (3), wherein the directional coupler (1), the interference arms (2) and the multimode interference coupler (3) are sequentially cascaded to form a Mach-Zehnder interferometer;
an upper port Input A of the Input end of the directional coupler (1) is the Input end of the differentiator, and an Output port Output of the multimode interference coupler (3) is the Output end of the differentiator; a hot electrode (4) is arranged right above the coupling area of the directional coupler (1), and the width of the hot electrode covers the whole coupling area and the surrounding partial area; siO is arranged between the hot electrode (4) and the directional coupler (1) 2 As a buffer layer (5);
applying a variable voltage across the hot electrode (4) to realize proportional change of the optical power output by the directional coupler (1) part so as to adjust the differential order of the final output of the differentiator;
under the no-modulation condition, the optical power ratio at the working wavelength of the transmission port A and the coupling port B output from the directional coupler (1) is less than 1, so as to ensure that the differential order under the no-modulation condition is less than 1.
2. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material according to claim 1, wherein: the directional coupler (1) comprises two input straight waveguides (1-1), four bent waveguides (1-2), two coupling straight waveguides (1-3) and transition waveguides (1-4) which are transited from ridge type waveguide to strip type waveguide, wherein the two coupling straight waveguides (1-3) form a coupling area C1 with a distance.
3. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material according to claim 2, wherein: the coupling space of the directional coupler (1) is adjusted according to the modulation efficiency of the modulation system, and if the modulation system has a low modulation level for the waveguide refractive index, namely the achievable refractive index change range is small, the coupling space of the directional coupler (1) is reduced to improve the sensitivity of the splitting ratio to the refractive index change.
4. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material according to claim 1, wherein: the interference arm (2) is a strip waveguide and comprises eight quarter-ring waveguides (2-1) with the radius of 15 mu m and interference arm straight waveguides (2-2) for adjusting optical path difference.
5. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material according to claim 1, wherein: the length difference of the two interference arms (2) is determined by the requirement on the working wavelength of the differentiator, namely after the working wavelength of the differentiator is determined, the length difference of the two interference arms (2) is designed to enable light at the working wavelength to realize phase inversion after passing through the interference arms (2).
6. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material as defined in claim 1 wherein: the multi-mode interference coupler (3) comprises three straight waveguides (3-1), three Taper type waveguides (3-2) for reducing propagation loss and a multi-mode interference cavity (3-3).
7. A Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI materials as claimed in claim 2 or 6, wherein: the upper arm of the output end of the directional coupler (1) is connected with the upper arm of the input end of the interference arm (2) through a transition waveguide (1-4), and the lower arm of the output end of the directional coupler (1) is connected with the lower arm of the input end of the interference arm (2) through a transition waveguide (1-4); the upper arm of the output end of the interference arm (2) is connected with the upper arm of the input end of the multimode interference coupler (3) through a Taper type waveguide (3-2), and the lower arm of the output end of the interference arm (2) is connected with the lower arm of the input end of the multimode interference coupler (3) through the Taper type waveguide (3-2).
8. A mach-zehnder interferometer type adjustable fractional order optical field differentiator prepared based on an SOI material according to claim 1, wherein: the thickness of the waveguide layer is 220nm, the directional coupler (1) is a ridge waveguide, and the etching depth is 150nm; the interference arm (2) and the multimode interference coupler (3) are strip waveguides, and the cross section of each waveguide is 500nm multiplied by 220nm.
CN202110543228.5A 2021-05-19 2021-05-19 Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material Active CN113253537B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110543228.5A CN113253537B (en) 2021-05-19 2021-05-19 Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110543228.5A CN113253537B (en) 2021-05-19 2021-05-19 Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material

Publications (2)

Publication Number Publication Date
CN113253537A CN113253537A (en) 2021-08-13
CN113253537B true CN113253537B (en) 2022-11-25

Family

ID=77182660

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110543228.5A Active CN113253537B (en) 2021-05-19 2021-05-19 Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material

Country Status (1)

Country Link
CN (1) CN113253537B (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2797331B1 (en) * 1999-08-03 2002-07-19 Cit Alcatel OPTICAL DIFFERENTIATOR
CN1811504A (en) * 2005-05-16 2006-08-02 浙江大学 Polymer thermal-optical type optical waveguide switch based on multimode interference coupler structure
GB2502259A (en) * 2012-05-02 2013-11-27 Bae Systems Plc Finding a bias voltage for an optical modulator
CN103760734B (en) * 2013-08-12 2016-10-05 西南交通大学 The full light differentiator of restructural based on Differential Group Delay
CN104849878A (en) * 2015-06-03 2015-08-19 东南大学 Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof
CN112817091A (en) * 2021-01-05 2021-05-18 中国科学院半导体研究所 Mach-Zehnder interferometer and multichannel coarse wavelength division multiplexer

Also Published As

Publication number Publication date
CN113253537A (en) 2021-08-13

Similar Documents

Publication Publication Date Title
Wu et al. On-chip tunable second-order differential-equation solver based on a silicon photonic mode-split microresonator
CN105204113B (en) A kind of adjustable polarization rotary device of silicon substrate
CN109738989A (en) 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave
CN104977733B (en) Silicon-based nonreciprocal device structure and electric control nonreciprocal implementation method
CN112596282B (en) Broadband adjustable splitting ratio polarization rotation beam splitter based on SOI
CN103293713B (en) A kind of Mach-Zehnder optical switch construction of high-efficiency compact
Shen et al. High-Performance Silicon 2× 2 Thermo-Optic Switch for the 2-$\mu $ m Wavelength Band
Memon et al. Recent advances in mode converters for a mode division multiplex transmission system
CN113534504A (en) Electric control adjustable polarization beam splitting method and device based on thin-film lithium niobate
CN112147740A (en) Multi-working-frequency-band programmable microwave photonic filter based on integrated silicon waveguide
CN115857201A (en) Polarization-independent electro-optic modulator based on thin-film lithium niobate dense double waveguides
JP2002162654A (en) Digital thermo-optic switch coupled with variable optical attenuator
CN117631146A (en) Polarization converter based on film lithium niobate waveguide supermode evolution
KR20020026774A (en) Externally controllable higher order mode generator in waveguide type.
CN113253537B (en) Mach-Zehnder interferometer type adjustable fractional order optical field differentiator prepared based on SOI material
CN105022177B (en) A kind of rectangle annular resonant cavity high-speed electro-optic modulator based on coupling modulation
CN109361136B (en) Generation system for updating arbitrary microwave waveform at high speed
CN115128880A (en) Double-injection micro-ring type reconfigurable multi-spectrum response unit prepared based on SOI (silicon on insulator) material
JP5467414B2 (en) Optical functional waveguide
CN112327517B (en) Narrow bandwidth Mach-Zehnder interferometer and spectrum shaping device and method
CN211669401U (en) Active polarization rotator realized based on mixed surface plasma groove waveguide
CN113934256A (en) Variable-coefficient differential equation photon calculation solving system
CN108627919B (en) Polarization insensitive silicon-based optical switch
CN111239896A (en) Active polarization rotator realized based on mixed surface plasma groove waveguide
CN112946826A (en) Thermo-optical switch with polarization rotation function based on SOI material preparation

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant