CN105044931B - Silicon-based integrated difference electrooptic modulator and preparation method thereof - Google Patents
Silicon-based integrated difference electrooptic modulator and preparation method thereof Download PDFInfo
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- CN105044931B CN105044931B CN201510573807.9A CN201510573807A CN105044931B CN 105044931 B CN105044931 B CN 105044931B CN 201510573807 A CN201510573807 A CN 201510573807A CN 105044931 B CN105044931 B CN 105044931B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
Abstract
The invention discloses a kind of silicon-based integrated difference electrooptic modulator and preparation method thereof, optics basic structure is Mach-Zehnder interferometer structure, is made of silicon substrate micro-nano waveguide.Electrode structure uses the coplanar waveguide structure of capacitance coupling type, and form is " earth polar pickup electrode earth polar " (G S G).Two phase displacement arm (the internal PN junction by making carries out phase-modulation) of Mach-Zehnder interferometer are located between earth polar and two gaps of pickup electrode.The coplanar waveguide electrode structure of capacitance coupling type, which is not only responsible for high speed alternator driven signal being coupled to the PN junction in phase displacement arm, to be modulated, and its capacitance structure is also prevented from two earth polars of input electrode by DC bias circuit short circuit.The structure reduces the cost of element manufacturing using the CMOS technology of existing maturation, improves integrated level, to be particularly suitable for need high integration, high-performance, low-power consumption light network field application.
Description
Technical field
The invention belongs to light networks and technical field of photo communication, and in particular to be used for a kind of silicon substrate difference electric light of light network
Modulator and preparation method thereof.
Background technology
The application of copper interconnection technology in the chips based on Damascus technics is faced with chip feature sizes
The various problems brought of reduction, such as bandwidth, delay, power consumption etc..On-chip optical interconnection is considered as solving this very corn of a subject
Technology.Due to be under the application background of on-chip optical interconnection, it is many to being proposed for the electrooptic modulator of on-chip optical interconnection
It is required that such as small size, high speed, low-power consumption, high reliability, heat it is insensitive.It is mutual for the light of level between chip chamber and pcb board
Also there is requirements above together with sample.At a high speed, low-power consumption, low cost, high reliability pure silicon-based electro-optical modulator become research
Hot spot.
2004, Intel Company of the U.S. reported the MZI type silicon substrate light that modulation rate reaches GHz magnitudes on Nature
Modulator, preparation process are compatible with CMOS technology.The researcher of Cornell universities in 2005 reports on Nature to be based on
The high-speed electro-optic modulator of SOI waveguide micro-ring resonators.Luxtera companies of the U.S. in 2008 illustrate in the world first to common people
The silicon-based monolithic integrated high-speed CMOS optical transceiver modules that block manufactures on 130nm CMOS fabrication lines, using WDM technology, data pass
Defeated 4 × 10Gbps of rate.The same year Intel Company reports the silicon substrate light using modulator array and wavelength-division multiplex MUX/DeMUX
Sub- integrated chip, message transmission rate 200Gbps.Columbia universities of the U.S. in 2010 and Cornell universities cooperation report
The experimental result of long distance transmission is carried out using silicon-based micro ring modulator.Its silicon-based micro ring for being 6 microns using a radius
Electrooptic modulator is successfully realized the transmission of the 80km of 12.5Gb/s data.This article simultaneously by micro-loop electrooptic modulator with
LiNbO3-MZI modulators are compared, and show silicon-based modulator performance already close to realistic scale.2012, Britain
Surrey universities report the silicon-based modulator experimental result of 50Gb/s with the U.S. laboratories Bell in succession.Equally in 2013,
Seminar of Alcatel-Lucent companies reports the silicon substrate collection that the optical modulator that is concerned with is made using MZI type silicon-based electro-optical modulators
At change scheme.
It is an effective method by the way of differential modulation to reduce the power consumption of modulator.The laboratories Bell rate
Also the scheme using differential encoder has been attempted, Opitcs Express 20 (6), 2012 (High-speed are as a result published in
Low-voltage single-drive push-pull silicon Mach-Zehnder modulators) on.Although its
Realize the function of differential modulation, but they realize that the structure of differential modulation is tandem, driving voltage is with input voltage
Half is added in two modulation arms, to virtual value or original input voltage, can not reduce driving voltage.
The present invention is in view of the above problems, use parallel modulated structure so that has and inputs in two modulation arms
The same effective voltage of voltage finally reduces power consumption to reduce driving voltage.
Invention content
The main purpose of the present invention is to provide a kind of simple for process, while silicon-based electro-optical modulator driving electricity can be reduced
The method of pressure, to achieve the purpose that functionization.
In order to achieve the above objectives, the present invention provides a kind of novel silicon-based integrated difference electrooptical modulator structures, should
Structure uses the input electrode form of G-S-G, and the second layer for being connected with PN junction phase-shifter is coupled to by capacity coupled mode
Metal, and the high speed signal for being transmitted across modulator is absorbed by terminating resistor, prevent reflection signal interference modulated signal.Direct current
Biasing networks provide suitable reverse bias to PN junction, and capacity coupled structure makes the DC network of load direct current biasing not
Can by the earth polar metal of first layer short circuit.So that two modulation arms of silicon-based electro-optical modulator are both input into electric signal tune
System, finally realizes differential modulation.
The present invention outstanding advantages be：Simple semiconductor technology is used, silicon-based electro-optic is realized using double layer of metal
The parallel differential modulation of modulator so that have the modulation as input electrical signal in two modulation arms of silicon-based modulator
Amplitude, so that drive signal reduces half, AC power dissipation is reduced to a quarter when single armed modulation.
Description of the drawings
Fig. 1 is the structural schematic diagram of capacitively coupled silicon substrate Mach-Zehnder electro-optic modulator；
Fig. 2 is the distributed circuit schematic diagram of capacitively coupled silicon substrate Mach-Zehnder electro-optic modulator；
Fig. 3 is with the beam splitter and bundling device based on multi-mode interferometer (multi-mode interference, MMI)
Operating diagram；
Fig. 4 is the sectional view of modulation arm waveguide, using the silicon substrate (SOI substrate) on insulator.
Specific implementation mode
By way of preferred embodiment, the present invention is described in further detail from below in conjunction with attached drawing, can make the present invention's
Above-mentioned purpose, scheme and advantage become more to be clear, wherein：
Fig. 1 is the schematic top view of the integrated silicon substrate differential encoder.The optical texture of device uses Mach-Zehnder
Interferometer structure, electricity structure use the form of traveling wave electrode.The top-level metallic of traveling wave electrode uses the form of GSG, top layer gold
Belong to and forms a capacitance structure between underlying metal.Traveling wave electrode underlying metal is connected with PN junction, in the another of traveling wave electrode
End integrates terminating resistor.Load input terminal AC signal in traveling wave electrode top-level metallic by the top-level metallic of traveling wave electrode with
Capacitance structure between underlying metal is coupled on PN junction and is modulated.By loading DC voltage to terminating resistor so that PN
Knot is operated in reverse state.
Fig. 2 is the distributed circuit figure of the integrated silicon substrate differential encoder.High speed modulated signal is by there is double-level-metal structure
It is coupled in two PN junction modulation arms (reversed junction capacity of the distribution capacity that double-level-metal is constituted much larger than PN at capacitance structure
In the case of), it is terminated resistance absorption in end；The capacitance structure also plays blocking effect simultaneously, so that device is operated in
When under conditions of reverse bias, entire circuit network does not have short circuit path.Two are modulated simultaneously eventually by single drive signal
Modulation arm.
Fig. 3 is with the beam splitter and bundling device based on multi-mode interferometer (multi-mode interference, MMI)
Operating diagram.When incident laser is by a MMI, the multimode self-interference of MMI, to output port formed two intensity and
The image of phase all same.Realize 1: 1 beam splitting effect.The MMI bundling device courses of work are the inverse process of MMI beam splitters.Root
According to light path principle, you can to realize a relevant conjunction beam process.
Fig. 4 is the sectional view of modulation arm waveguide, using the silicon substrate (SOI substrate) on insulator.First in substrate
On etch ridge waveguide structure, and do corresponding doping, form the structure of P-N-P-N.Deposit one layer of SiO2Form waveguide
Upper limiting layer, and as the separation layer of positive and negative anodes.Last etch lead hole, and form first layer metal electrode pattern.It forms sediment again
One layer of dielectric material (such as SiO of product2, SiN etc.) and as the separation layer between double layer of metal, metal is deposited on the dielectric material and is carved
Erosion forms the pattern of second layer metal, ultimately forms capacity coupled travelling wave electric pole structure.
Most effective electrooptic effect is exactly plasma dispersion effect in monocrystalline silicon.1987, Soref et al. was utilized
The experimental data of Kramers-Kronig relationships and optical absorption spectra has obtained the approximate formula of plasma dispersion effect.For wave
A length of 1.55 μm of light, dispersion relation expression formula are：
Δ n=Δs ne+Δnh=-[8.8 × 10-22·ΔNe+8.5×10-18·(ΔNh)0.8]
The variation of refractive index and absorption coefficient, Δ N caused by wherein Δ n and respectively free carrier concentration variationeWith
ΔNhThe respectively concentration variation of electrons and holes, unit cm-3.When carrier concentration changes into 1018cm-3, generated folding
It penetrates rate and changes reachable -10-3.Compared with Kerr effects or Franz-Keldysh effects, the refractive index that plasma dispersion effect generates becomes
Change has been higher by two orders of magnitude.Therefore, the high-speed modulator of silicon substrate is mainly realized by plasma dispersion effect at present.In order to just
In being integrated on chip, the size of device becomes a crucial index.Nature since 2005 reports Cornel
University is about PIN structural as a result, heat sensitivity in view of micro-ring resonator structure, PIN electricity structures and Mach-Zehnder optics
The modulator of structure is considered as that can be suitable on piece to integrate working environment.Although PIN structural has higher modulation efficiency, energy
Enough reduce size, but its speed is limited by the Carrier recombination process in its electricity course of work, it always cannot be effective
It improves.Intel Company reports the silicon-based electro-optical modulator based on reversed PN junction within 2007, and modulation rate has reached 30Gbps.
But the power consumption of reversed PN type modulators is higher, is the effective ways for reducing modulator power consumption by the way of differential modulation.
The basic electricity structure of the present invention is P-N-P-N, and electrode structure is parallel capacitively coupled traveling wave electrode, to
Tandem differential encoder is avoided the case where only getting 50% driving voltage in modulation arm so that in each modulation arm
There is 100% driving voltage.Traveling wave electrode using capacitance coupling type and corresponding biasing networks, can make by modulation arm
High-speed electrical signals afterwards are completely absorbed and can load corresponding bias voltage to each modulation arm, so that device can
With high speed operation, driving voltage reduces half, and AC power dissipation reduces by 3/4ths.
Following steps progress may be used in terms of element manufacturing：
Step 1：Choose top layer Si thickness 220nm, buried layer SiO2Thick 2 μm of eight inches of SOI wafers, use deep-UV lithography first
Etching depth with the ducting layer of dry etching making devices, silicon is 150nm；
Step 2：Alignment is carried out to the ducting layer that the 1st step obtains, defines conversion and the item of ridge waveguide and slab waveguide
The figure of shape waveguide region, the etching depth of Si is 70nm in the step, which forms the end face rectangular waveguide for coupling
With the structure of MMI；
Step 3：Make mask using photoresist, etching N-type gently mixes window, then carries out ion implanting, concentration is generally less than
8×1017cm-3；
Step 4：Make mask using photoresist, etching p-type gently mixes window, then carries out ion implanting, a concentration of；1×
1018cm-3, the structure of PN is just formd at this time；
Step 5：Making mask using photoresist, etching N++ adulterates hole, then carries out ion implanting, a concentration of 5.5 ×
1020cm-3；
Step 6：Making mask using photoresist, etching P++ adulterates hole, then carries out ion implanting, a concentration of 5.5 ×
1020cm-3；
Step 7：Deposit the SiO of 1.5 μ m-thicks2As waveguide and it is thermoae between separation layer；
Step 8：Terminating resistor metal is deposited, terminating resistor pattern is etched；
Step 9：Doped region fairlead is opened, the first layer metal being connected with PN is made；
Step 10：Deposit one layer of dielectric material, the dielectric layer as capacitance structure；
Step 11：Metal is deposited as second layer metal, makes lead electrode；
Step 12：Deep etching is carried out to input/output Waveguide end face, improves the coupling efficiency of optical fiber and chip.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (5)
1. a kind of silicon-based integrated difference electrooptic modulator, optics basic structure is mach-zehnder interferometer configuration, including
Two phase displacement arm, capacitance coupling type electrode, terminating resistor, DC bias networks, the wherein electrode structure of capacitance coupling type use
Coplanar waveguide structure, form are " earth polar-pickup electrode-earth polar " (G-S-G)；Two phase displacement arm are located at earth polar and pickup electrode
Between two gap, phase-modulation is carried out, there is PN junction phase-shifter inside phase displacement arm, it is characterised in that：
Wherein, the traveling wave electrode of PN junction phase-shifter is double-level-metal form, and this double layer of metal uses capacitive coupling form；
Modulated signal is coupled to the second layer metal for being connected with PN junction phase-shifter, the integrated termination of the other end by capacity coupled mode
The high-speed electrical signals that resistance absorption is transmitted along second layer metal electrode prevent signal reflex from generating interference, pass through simultaneously
DC bias networks are added to provide suitable reverse bias to PN junction the two terminating resistors, and capacity coupled structure to add
Carry direct current biasing DC network will not by the earth polar metal of first layer short circuit so that two of silicon-based electro-optical modulator
Modulation arm is both input into electric signal modulation, finally realizes differential modulation.
2. silicon-based integrated difference electrooptic modulator as described in claim 1, which is characterized in that the electric signal of input is single
The signal at end, single-ended input electrical signal are ac-coupled to by capacitive metal electrode in two modulation arms, to two phase shifts
Arm is carried out at the same time modulation.
3. silicon-based integrated difference electrooptic modulator according to claim 1, which is characterized in that when load electric signal
When, a PN junction is in the state of reverse biased, and another is in the state of not backward voltage, to generate difference tune
The effect of system.
4. silicon-based integrated difference electrooptic modulator according to claim 1, which is characterized in that the structure is also applicable in
PIN junction, MOS and capacitive semiconductor structure.
5. the preparation method of silicon-based integrated difference electrooptic modulator as described in claim 1, includes the following steps：
Step 1：Choose top layer Si thickness 220nm, buried layer SiO2Thick 2 μm of eight inches of SOI wafers are used deep-UV lithography and are done first
Method etches the ducting layer of making devices, and the etching depth of silicon is 150nm；
Step 2：Alignment is carried out to the ducting layer that the 1st step obtains, defines conversion and the bar shaped wave of ridge waveguide and slab waveguide
The figure in region is led, the etching depth of Si is 70nm in the step, which forms the end face rectangular waveguide and MMI for coupling
Structure；
Step 3：Make mask using photoresist, etching N-type gently mixes window, then carries out ion implanting, and concentration is less than 8 ×
1017cm-3；
Step 4：Make mask using photoresist, etching p-type gently mixes window, then carries out ion implanting, a concentration of；1×1018cm-3,
The structure of PN is just formd at this time；
Step 5：Making mask using photoresist, etching N++ adulterates hole, then carries out ion implanting, and a concentration of 5.5 × 1020cm-3；
Step 6：Making mask using photoresist, etching P++ adulterates hole, then carries out ion implanting, and a concentration of 5.5 × 1020cm-3；
Step 7：Deposit the SiO of 1.5 μ m-thicks2As waveguide and it is thermoae between separation layer；
Step 8：Terminating resistor metal is deposited, terminating resistor pattern is etched；
Step 9：Doped region fairlead is opened, the first layer metal being connected with PN is made；
Step 10：Deposit one layer of dielectric material, the dielectric layer as capacitance structure；
Step 11：Metal is deposited as second layer metal, makes lead electrode；
Step 12：Deep etching is carried out to input/output Waveguide end face, improves the coupling efficiency of optical fiber and chip.
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