CN114063321B - Silicon photon push-pull microphone Jeda modulator with double differential electrodes - Google Patents
Silicon photon push-pull microphone Jeda modulator with double differential electrodes Download PDFInfo
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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Abstract
The invention provides a silicon photon push-pull Mijeda modulator with double differential electrodes, which improves the traditional silicon photon push-pull Mijeda modulator into a double push-pull transmission line structure, namely a four-signal electrode structure. The method and the device realize that under the premise that the amplitude of a single signal source is limited in a silicon photon high integration environment, a plurality of groups of small-amplitude signal inputs are effectively utilized to meet the requirement of larger modulation depth.
Description
Technical Field
The invention belongs to the technical field of communication signal modulation, and particularly relates to a silicon photon push-pull microphone Jenda modulator with double differential electrodes.
Background
The basic structure of a traditional silicon photon microphone jean modulator (Mach-Zender modulator) is a Mach-Zehnder modulator (a homologous light is separated in proportion and coupled back to a circuit after being subjected to different phase operations) with balanced or unbalanced two arms. The modulator is structured by placing one or a pair or a plurality of groups of waveguides with various forms of PN doping as phase shifters under metal electrodes. The signal (voltage) is driven on the metal electrode, so that the Mijeda interferometer produces different phase coupling after two paths of light cause different phase and intensity characteristics. In high speed transmission applications, the metal electrode and PN doped waveguide structure is generally described and designed as a transmission line model in which the propagation speed of the electrical signal is approximately the same as the group velocity of the optical signal in the waveguide.
In the application field, in order to effectively pursue high bandwidth and reduce length for reducing insertion loss, a common silicon optical mike jama modulator for high-speed transmission uses a push-pull structure (push-pull), that is, two transmission lines respectively drive a phase shifter with a PN junction, so that two arms of light naturally become a balanced mike jama interferometer with consistent loss. A common single transmission line with a phase transition device is usually designed as a transmission line with a transmission characteristic of about 50 ohms, even lower than 50 ohms, for better matching of consistent photoelectric propagation speed and reasonable system transmission effect. Along with the continuous evolution of the technology, the efficiency of the silicon photonic modulator is better and better, but at present, the common push-pull structure silicon photonic MacleJeda modulator still needs two paths of differential signals with higher swing amplitude. With the advance of deep submicron technology electronic design and manufacturing technology, the difficulty of providing high-swing signals in the high-speed field is increasing.
In fig. 1, a basic push-pull configuration mijenda modulator is illustrated, where a continuous optical carrier is divided equally and then passed through two waveguide phase shifters (here, a carrier-diffusion modulator is used as an example). The two waveguide phase shifters change the phase information of the two optical signals according to the generated refractive index change. After the two paths of light with the changed phase information are re-coupled (the static operating point phase modulator section which is usually appeared is omitted in the figure), one (or two or more) paths of new light signals with the intensity and phase information can be coupled out due to the phase difference of the two paths of homologous light signals. While the high-speed electrical modulation signal driven in the waveguide phase transition is fed into the high-speed electrodes of the two transmission line models, the signal is usually a differential signal and carries a bias voltage. The other end of the phase shifter (PN junction) is electrically contacted with the ground or an additional bias voltage point, and a voltage difference is generated between the other end of the phase shifter (PN junction) and the signal bias voltage so that the phase shifter (PN junction) works under a reasonable working bias voltage.
However, the structure described above is difficult to satisfy a large modulation depth on the premise that the amplitude of a single signal source is limited in a silicon photonic highly integrated environment.
Disclosure of Invention
The invention provides a silicon photon push-pull Mijeda modulator with double differential electrodes aiming at the defects and the requirements in the prior art, and the traditional silicon photon push-pull Mijeda modulator is improved into a double push-pull transmission line structure, namely a four-signal electrode structure. The method and the device realize that under the premise that the amplitude of a single signal source is limited in a silicon photon high integration environment, a plurality of groups of small-amplitude signal inputs are effectively utilized to meet the requirement of larger modulation depth.
The specific implementation content of the invention is as follows:
the invention provides a silicon photon push-pull microphone Jenda modulator with double differential electrodes, which comprises a light splitting unit, a waveguide unit, a driver unit, a coupling unit, a first differential pressure transmission line electrode unit, a second differential pressure transmission line electrode unit, a first waveguide phase shifter and a second waveguide phase shifter, wherein the light splitting unit is used for splitting a light beam;
the waveguide unit is connected with the light splitting unit and is divided into two paths of waveguides, namely a first waveguide unit and a second waveguide unit, after passing through the light splitting unit;
the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit comprise a first transmission line electrode unit and a second transmission line electrode unit;
the first waveguide phase shifters are correspondingly arranged on the first waveguide units; two ends of the first waveguide phase shifter are respectively connected with the first transmission line electrode unit and the second transmission line electrode unit of the first differential pressure transmission line electrode unit;
the second waveguide phase shifters are correspondingly arranged on the second waveguide units; two ends of the second waveguide phase shifter are respectively connected with the first transmission line electrode unit and the second transmission line electrode unit of the second differential pressure transmission line electrode unit;
the output tail ends of the first waveguide unit and the second waveguide unit are connected with the coupling unit, and at least one path of output is output after the coupling unit is coupled;
the driver unit is provided with four paths of drivers which are respectively a first driver, a second driver, a third driver and a fourth driver; bias voltage modules are arranged in the first driver, the second driver, the third driver and the fourth driver;
the first driver is connected with the first transmission line electrode unit of the first differential pressure transmission line electrode unit and transmits bias voltage to the first transmission line electrode unit of the first differential pressure transmission line electrode unit through a bias voltage module in the first driverVbias11；
The second driver is connected with the second transmission line electrode unit of the first differential pressure transmission line electrode unit, and transmits the bias voltage to the second transmission line electrode unit of the first differential pressure transmission line electrode unit through the bias voltage module in the second driverVbias12；
The third driver is connected with the first transmission line electrode unit of the second differential pressure transmission line electrode unit and transmits bias voltage to the first transmission line electrode unit of the second differential pressure transmission line electrode unit through a bias voltage module in the third driverVbias21；
The fourth driver is connected with the second transmission line electrode unit of the second differential pressure transmission line electrode unit, and transmits the bias voltage to the second transmission line electrode unit of the second differential pressure transmission line electrode unit through the bias voltage module in the fourth driverVbias22；
The bias voltageVbias11And bias voltageVbias12Are voltages in opposite phase to each other, and bias voltageVbias11Is higher than the bias voltageVbias12Voltage of (d);
the bias voltageVbias21And bias voltageVbias22Are voltages in opposite phase to each other, and bias voltageVbias21Is higher than the bias voltageVbias22The voltage of (c).
In order to better implement the present invention, the present invention further includes four sets of termination resistors, which are respectively and correspondingly lapped on the transmission ends of the first transmission line electrode unit and the second transmission line electrode unit of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit, and are correspondingly connected with the bias voltages corresponding to the first transmission line electrode unit and the second transmission line electrode unit of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
In order to better implement the present invention, the differential pressure transmission line electrode unit further includes a plurality of sets of ground electrodes, and the sets of ground electrodes are arranged at intervals outside the first transmission line electrode unit and the second transmission line electrode unit of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
To better implement the invention, further, the bias voltageVbias11Equal to bias voltageVbias21(ii) a The bias voltageVbias12Equal to bias voltageVbias22。
To better implement the invention, further, the bias voltageVbias11And bias voltageVbias21Is 3V, bias voltageVbias12And bias voltageVbias22Has a value of 1V.
In order to better implement the present invention, further, both the first waveguide phase transition and the second waveguide phase transition employ a silicon optical waveguide phase transition.
In order to better implement the present invention, the silicon optical waveguide phase transition used in the first waveguide phase transition and the second waveguide phase transition further includes a carrier injection type waveguide phase transition, a carrier diffusion type waveguide phase transition, and a carrier acceleration type waveguide phase transition.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the silicon photon push-pull microphone Jenda modulator with double differential electrodes disclosed by the invention increases the number of input signals without the help of excessive additional complex devices, so that the amplitude requirement of a single input signal is greatly reduced, and the amplitude is reduced by about 50%.
(2) With the modulator of the present invention, although the equivalent characteristic impedance for a single signal is reduced, the overall system signal source power consumption requirements do not increase because the amplitude requirement reduction for a single signal source is synchronous. The modulator structure requires more sets of small-amplitude input signals, avoids the difficult design that a high-bandwidth driver simultaneously requires high output amplitude, and even can achieve the possibility of being driven by the DAC output of a deep submicron CMOS process. Meanwhile, from the other direction, if a plurality of sets of drivers with larger amplitude are maintained, two times of input amplitude can be stacked, so that the length of the modulator (electrode and waveguide phase transition device) can be reduced by half under the condition of meeting the requirement of the target modulation depth, and the optical insertion loss of the modulator is reduced by half while the bandwidth of the modulator is greatly increased.
Drawings
Fig. 1 is a schematic diagram of a conventional mike jenda modulator;
FIG. 2 is a schematic diagram of the complete structure of the modulator of the present invention;
FIG. 3 is a simplified schematic diagram of a modulator according to the present invention;
FIG. 4 is a schematic diagram of the frequency/impedance relationship of the present invention;
FIG. 5 is a schematic diagram of the frequency/electrical propagation equivalent refractive index relationship of the present invention;
FIG. 6 is a schematic diagram of the electro-optic modulation frequency response relationship of the present invention.
Wherein: 1. the device comprises a first waveguide phase transition device, a second waveguide phase transition device, a first transmission line electrode unit, a third transmission line electrode unit, a first waveguide unit, a fourth waveguide unit, a terminal resistor, a ground electrode, a second waveguide phase transition device, a third waveguide electrode unit, a fourth waveguide electrode unit, a terminal resistor, a ground electrode and a fourth waveguide electrode.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and therefore should not be considered as a limitation to the scope of protection. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
the embodiment provides a silicon photon push-pull microphone jenda modulator with double differential electrodes, as shown in fig. 3, which includes a light splitting unit, a waveguide unit, a driver unit, a coupling unit, a first differential pressure transmission line electrode unit, a second differential pressure transmission line electrode unit, a first waveguide phase shifter 1, and a second waveguide phase shifter 2;
the waveguide unit is connected with the light splitting unit and is divided into two paths of waveguides, namely a first waveguide unit 5 and a second waveguide unit 6 after passing through the light splitting unit;
the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit both comprise a first transmission line electrode unit 3 and a second transmission line electrode unit 4;
the first waveguide phase shifters 1 are correspondingly arranged on the first waveguide units 5; two ends of the first waveguide phase shifter 1 are respectively connected with a first transmission line electrode unit 3 and a second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit;
the second waveguide phase shifters 2 are correspondingly arranged on the second waveguide units 6; two ends of the second waveguide phase shifter 2 are respectively connected with the first transmission line electrode unit 3 and the second transmission line electrode unit 4 of the second differential pressure transmission line electrode unit;
the output ends of the first waveguide unit 5 and the second waveguide unit 6 are connected with the coupling unit, and at least one path of output is output after the coupling unit is coupled;
the driver unit is provided with four paths of drivers which are respectively a first driver, a second driver, a third driver and a fourth driver; bias voltage modules are arranged in the first driver, the second driver, the third driver and the fourth driver;
the first driver is connected with the first transmission line electrode unit 3 of the first differential pressure transmission line electrode unit, and transmits bias voltage to the first transmission line electrode unit 3 of the first differential pressure transmission line electrode unit through a bias voltage module in the first driverVbias11；
The second driver is connected with the second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit, and transmits the bias voltage to the second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit through the bias voltage module in the second driverVbias12；
The third driver is connected with the first transmission line electrode unit 3 of the second differential pressure transmission line electrode unit, and transmits the bias voltage to the first transmission line electrode unit 3 of the second differential pressure transmission line electrode unit through the bias voltage module in the third driverVbias21；
The fourth driver is connected with the second transmission line electrode unit 4 of the second differential pressure transmission line electrode unit, and transmits the bias voltage to the second transmission line electrode unit 4 of the second differential pressure transmission line electrode unit through the bias voltage module in the fourth driverVbias22；
The bias voltageVbias11And bias voltageVbias12Are voltages in opposite phase to each other, and bias voltageVbias11Is higher than the bias voltageVbias12Voltage of (d);
the bias voltageVbias21And bias voltageVbias22Are voltages in opposite phase to each other, and bias voltageVbias21Is higher than the bias voltageVbias22The voltage of (c).
Example 2:
in this embodiment, on the basis of the foregoing embodiment 1, in order to better implement the present invention, as shown in fig. 2, the present invention further includes four sets of termination resistors 7, where the four sets of termination resistors 7 are respectively and correspondingly lapped on the transmission ends of the first transmission line electrode unit 3 and the second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit, and are correspondingly connected with the bias voltages corresponding to the first transmission line electrode unit 3 and the second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 3:
in this embodiment, on the basis of any one of the above embodiments 1-2, in order to better implement the present invention, as shown in fig. 2, the differential pressure transmission line electrode unit further includes a plurality of sets of ground electrodes 8, and the sets of ground electrodes 8 are arranged at intervals outside the first transmission line electrode unit 3 and the second transmission line electrode unit 4 of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
Other parts of this embodiment are the same as any of embodiments 1-2 described above, and thus are not described again.
Example 4:
this embodiment is based on any of the above embodiments 1-3, and the main object of this invention is to provide a new structure of silicon photonic modulator (which is often used as part of various types of optical signal transmitters) for high-speed optical communication data transmission, which is a structure of dual push-pull transmission line improved from the conventional silicon photonic mike jelda modulator, that is, a structure of four signal electrodes. The purpose is to effectively utilize multiple groups of small amplitude signal input to meet the requirement of larger modulation depth on the premise that the amplitude of a single signal source is limited in a silicon photon high integration environment.
Because the invention aims to meet the requirement of reducing the amplitude of a single-path signal, the invention can be applied to but not limited to a silicon photon MacJanda modulator, and a phase shifter in the silicon photon MacJanda modulator is not limited to a carrier injection type, a carrier diffusion type, a carrier acceleration type or other silicon photon waveguide phase shifter structures. In the explanation hereinafter, for convenience, a carrier diffusion type modulator will be described with emphasis on the example.
The core of the invention is shown in fig. 2, and the basic structure is explained as follows:
the waveguide is divided into two beams after the light splitting structure, then passes through two waveguide phase shifters, and then is combined into a beam structure (the physical structure may be the same as or different from the light splitter, and may output single-path or double-path light) as output light. Two poles of the waveguide phase shifters are connected to the metal electrodes, and a two-wire differential transmission line is arranged on each waveguide phase shifter. The transmission line outputs are respectively bridged with the termination unit (generally a resistor, not limited to an optical chip) resistors to respectively bridge the bias voltages according to subsequent requirements.
The entire device needs to be provided with a carrier light source and the high speed electrical input signal is provided by the driver device.
The core summary of the invention can be summarized as follows:
1. the electrodes of the waveguide phase shifters in the electro-optical modulator are designed as a two-wire differential transmission line (i.e. two parallel metal electrodes serve one waveguide phase shifter).
2. The termination resistances of the two-wire differential transmission line electrodes become two resistances and are connected to bias voltages Vbias1 and Vbias2, respectively. The voltage difference between Vbias1 and Vbias2 provides the bias voltage for the waveguide phase shifters (PN junctions). This difference is typically determined by the characteristics of the PN junction of the phase shifter.
3. The input signals on the left side in fig. 2 are four sets of signals, V1, V2, V3, and V4. In fig. 2, an NRZ time-domain signal is used as an example for simplifying the representation, and the signal is not limited to signal formats and characteristics, such as analog signals like PAM, RF, etc. The input signals are shown as V1 and V3 with the quiescent operating point equal to Vbias1, and the high speed signals are differential. The quiescent operating point of V2 and V4 is equal to Vbias2, and the high speed signals are in differential form. The four input signals respectively correspond to the bias voltage behind the far-end terminal resistor of the transmission line so as to ensure the stability of the bias voltage of the waveguide phase transition device (PN junction). In practice, the four input signals are provided by four driver outputs, and the bias voltages can be directly integrated into the driver circuit (i.e., the driver output signals satisfy the bias voltage condition), or can be given by a re-bias circuit structure (e.g., biasT or similar functional circuit structure) on the electrical driver chip, or in the package structure, or on the optical chip.
4. The ground electrode can be added between the two groups of differential transmission line electrodes in fig. 2 to adjust the transmission line capacitance characteristics, and in some cases, the ground electrode can be omitted after reconfiguration (as shown in fig. 3). Unlike the traditional silicon photon push-pull structure mijenda modulator, the bias voltage of the structure is directly guaranteed by the electrodes of two groups of differential signal transmission line structures, so that the ground or bias voltage electrode is not absolutely necessary.
5. This modulator structure does not limit the optical operating point location and can be designed as a symmetric silicon photonic macchada modulator, or an asymmetric silicon photonic macchada modulator for wavelength needs, as desired. The working characteristics can meet the requirements of common intensity light modulation or phase light modulation (used for coherent optical transmitter equipment) according to the requirement of adjusting the working point (usually completed by a thermode static phase shifter or other similar general structures without special requirements).
The working principle is as follows: the silicon photon push-pull Mijeda modulator with double differential electrodes increases the number of input signals without the help of excessive additional complex devices, so that the amplitude requirement of a single input signal is greatly reduced (50%). Although the equivalent characteristic impedance for a single signal is reduced, the overall system signal source power consumption requirements do not increase because the amplitude requirement reduction for a single signal source is synchronous. The modulator structure requires more sets of small-amplitude input signals, avoids the difficult design that a high-bandwidth driver simultaneously requires high output amplitude, and even can achieve the possibility of being driven by the DAC output of a deep submicron CMOS process. Meanwhile, from the other direction, if a plurality of sets of drivers with larger amplitude are maintained, two times of input amplitude can be stacked, so that the length of the modulator (electrode and waveguide phase transition device) can be reduced by half under the condition of meeting the requirement of the target modulation depth, and the optical insertion loss of the modulator is reduced by half while the bandwidth of the modulator is greatly increased.
Other parts of this embodiment are the same as any of embodiments 1 to 3, and thus are not described again.
Example 5:
this embodiment is based on any of the above embodiments 1-4, and as shown in fig. 4, 5, and 6, and is exemplarily illustrated by a design example and a basic performance analysis of an equalized dual push-pull structure mijejelta modulator based on a silicon photon carrier diffusion type phase shifter manufacturing platform.
In a common silicon photon fabrication process standard, waveguide phase shifters are placed distributively under a pair of metal electrodes (S +, S-). The metal on both sides is the ground (only S +, S-metal electrodes can be reserved under the requirement of compact layout, and the characteristics need to be reconfigured according to the characteristics).
The exemplary use of a single layer copper metal electrode model, and a 220nm to 100nm thick silicon ridge waveguide, and 1.3e17 boron, 1.3e17 phosphorus as a shallow dopant, 1e20 boron, and 1e20 phosphorus as a deep dopant for subsequent verification. The characteristics may be reconfigured after adjustment, as desired.
The impedance, electrical signal speed and optical group speed trim were analyzed:
the phase transition and the waveguide are temporarily set to 2 lengths in this analysis. Four distal resistors of 18ohm were given as terminals and characteristic analysis was performed. As shown in fig. 4, when S + and S-are differential signals in a group of cells with waveguide phase shifters, the overall transmission impedance is 40 ohms. As shown in fig. 5, the electrical propagation equivalent refractive index (vacuum light velocity vs. electrical signal propagation velocity on the transmission line) is about 4.
The optical phase transition device exhibits a phase transition capability of Vpi =1.8V · cm under a reverse bias of 2V, while the optical group refractive index is approximately equal to 4 around 1310 nm. Therefore, the electrical propagation speed on the electrode is basically consistent with the propagation speed of the optical group in the waveguide, thereby avoiding the asynchronous jitter of the modulation signal.
The modulator electrode attenuation and electro-optic bandwidth were analyzed:
by analysis, the 2mm differential transmission line with the waveguide phase shifters has the electrical signal attenuation on the electrodes and the predicted electro-optic conversion bandwidth as shown in fig. 6 when the termination resistance is 18 ohm. The electro-optical bandwidth can reach about 31 GHz.
Analyzing the characteristics of the time domain signal introduction and the optical time domain signal:
the signal is introduced in the form of figure 2 by a mike jenda modulator consisting of two 2mm phase shifters as core components. The input signals V1, V2, V3, V4 are all signal sources with an output impedance of 18ohm, Vpp being 1V, and V1 and V3 bias voltages Vbias1=3V, and V2 and V4 bias voltages Vbias2= 1V. The termination resistance was four 18ohm resistors and was connected as in fig. 2.
Other parts of this embodiment are the same as any of embodiments 1 to 4, and thus are not described again.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (7)
1. A silicon photon push-pull microphone Jenda modulator with double differential electrodes is characterized by comprising a light splitting unit, a waveguide unit, a driver unit, a coupling unit, a first differential pressure transmission line electrode unit, a second differential pressure transmission line electrode unit, a first waveguide phase shifter (1) and a second waveguide phase shifter (2);
the waveguide unit is connected with the light splitting unit and is divided into two paths of waveguides, namely a first waveguide unit (5) and a second waveguide unit (6), after passing through the light splitting unit;
the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit both comprise a first transmission line electrode unit (3) and a second transmission line electrode unit (4);
the first waveguide phase shifters (1) are correspondingly arranged on the first waveguide units (5); two ends of the first waveguide phase shifter (1) are respectively connected with a first transmission line electrode unit (3) and a second transmission line electrode unit (4) of the first differential pressure transmission line electrode unit;
the second waveguide phase shifters (2) are correspondingly arranged on the second waveguide units (6); two ends of the second waveguide phase shifter (2) are respectively connected with a first transmission line electrode unit (3) and a second transmission line electrode unit (4) of the second differential pressure transmission line electrode unit;
the output tail ends of the first waveguide unit (5) and the second waveguide unit (6) are connected with the coupling unit, and at least one path of output is output after the coupling unit is coupled;
the driver unit is provided with four paths of drivers which are respectively a first driver, a second driver, a third driver and a fourth driver; bias voltage modules are arranged in the first driver, the second driver, the third driver and the fourth driver;
the first driver is connected with the first transmission line electrode unit (3) of the first differential pressure transmission line electrode unit, and transmits bias voltage V to the first transmission line electrode unit (3) of the first differential pressure transmission line electrode unit through a bias voltage module in the first driverbias11；
The second driver is connected with the second transmission line electrode unit (4) of the first differential pressure transmission line electrode unit, and transmits the bias voltage V to the second transmission line electrode unit (4) of the first differential pressure transmission line electrode unit through a bias voltage module in the second driverbias12；
The third driver is connected with the first transmission line electrode unit (3) of the second differential pressure transmission line electrode unit, and transmits bias voltage V to the first transmission line electrode unit (3) of the second differential pressure transmission line electrode unit through a bias voltage module in the third driverbias21；
The fourth driver is connected with the second transmission line electrode unit (4) of the second differential pressure transmission line electrode unit, and transmits the bias voltage V to the second transmission line electrode unit (4) of the second differential pressure transmission line electrode unit through the bias voltage module in the fourth driverbias22；
The bias voltage Vbias11And a bias voltage Vbias12Are voltages in opposite phase to each other, and a bias voltage Vbias11Is higher than the bias voltage Vbias12Voltage of (d);
the bias voltage Vbias21And a bias voltage Vbias22Are voltages in opposite phase to each other, and a bias voltage Vbias21Is higher than the bias voltage Vbias22The voltage of (c).
2. A silicon photonic push-pull microphone jenda modulator with double differential electrodes as claimed in claim 1, further comprising four sets of terminating resistors (7), wherein said four sets of terminating resistors (7) are respectively disposed at the transmission ends of the first transmission line electrode unit (3) and the second transmission line electrode unit (4) respectively overlapping the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit, and are correspondingly connected with the bias voltages corresponding to the first transmission line electrode unit (3) and the second transmission line electrode unit (4) of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
3. A silicon optical push-pull microphone jenda modulator of double differential electrodes as claimed in claim 1 or 2, further comprising ground electrodes (8), said ground electrodes (8) being provided in plural sets, spaced outside the first transmission line electrode unit (3) and the second transmission line electrode unit (4) of the first differential pressure transmission line electrode unit and the second differential pressure transmission line electrode unit.
4. The dual differential electrode silicon photonic push-pull microphone jenda modulator of claim 1, wherein said bias voltage Vbias11Is equal to the bias voltage Vbias21(ii) a The bias voltage Vbias12Is equal to the bias voltage Vbias22。
5. The dual differential electrode silicon photonic push-pull microphone jenda modulator of claim 4, wherein said bias voltage Vbias11And a bias voltage Vbias21Is 3V, bias voltage Vbias12And a bias voltage Vbias22Has a value of 1V.
6. A double differential electrode silicon photonic push-pull mijelda modulator as claimed in claim 1, characterised in that said first (1) and second (2) waveguide transitions both use silicon photonic waveguide transitions.
7. A double-differential-electrode silicon photonic push-pull mijelda modulator as claimed in claim 6, characterized in that the silicon photonic waveguide phase-shifters used for said first (1) and second (2) waveguide phase-shifters comprise carrier-injection type, carrier-diffusion type and carrier-acceleration type waveguide phase-shifters.
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Denomination of invention: A silicon photon push-pull McJanda modulator with dual differential electrodes Granted publication date: 20220422 Pledgee: The Agricultural Bank of Chengdu branch of Limited by Share Ltd. Chinese Sichuan Pledgor: Chengdu Mingyi Electronic Technology Co.,Ltd. Registration number: Y2024990000170 |