CN105044931A - Silicon-based integrated differential electrooptical modulator and preparation method for same - Google Patents
Silicon-based integrated differential electrooptical modulator and preparation method for same Download PDFInfo
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- CN105044931A CN105044931A CN201510573807.9A CN201510573807A CN105044931A CN 105044931 A CN105044931 A CN 105044931A CN 201510573807 A CN201510573807 A CN 201510573807A CN 105044931 A CN105044931 A CN 105044931A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 230000008878 coupling Effects 0.000 claims abstract description 8
- 238000010168 coupling process Methods 0.000 claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000000276 deep-ultraviolet lithography Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims 4
- 239000003990 capacitor Substances 0.000 claims 1
- 230000011514 reflex Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000010363 phase shift Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a silicon-based integrated differential electrooptical modulator and a preparation method for the same. An optical basic structure of the modulator is a Mach-Zehnder interferometer; and the modulator is manufactured via silicon-based micro-nano waveguide. An electrode structure is a capacitance coupling type coplanar waveguide structure in a form of ground pole-signal pole-ground pole; two phase shift arms of the Mach-Zehnder interferometer are phase-modularized via a PN junction prepared inside and respectively placed in two gaps between the ground poles and the signal pole; and the capacitance coupling coplanar waveguide electrode structure can couple a high speed signal to a PN junction of the phase shift arms for modularization and can also prevent short circuit of a DC bias circuit by two ground poles of an input electrode. Component manufacturing cost is reduced by a present mature CMOS technology, so integration degree is improved and the silicon-based integrated differential electrooptical modulator is especially suitable for application in fields of optical interconnection requiring high integration degree, high performance and low power consumption.
Description
Technical field
The invention belongs to light network and technical field of photo communication, be specifically related to the silica-based differential electrical photomodulator of one and preparation method thereof for light network.
Background technology
Copper interconnection technology based on Damascus technics application is in the chips faced with the various problems that the reduction with chip feature sizes brings, as bandwidth, and time delay, power consumption etc.On sheet, light network is considered to the core technology addressed this problem.Due to be light network on sheet application background under, many requirements are proposed to the electrooptic modulator of light network on sheet, as insensitive etc. in small size, high speed, low-power consumption, high reliability, heat.Light network for level between chip chamber and pcb board equally also has above requirement.The pure silicon-based electro-optical modulator of at a high speed, low-power consumption, low cost, high reliability becomes the focus of research.
2004, American I ntel company reported the silica-based photomodulator of MZI type that modulation rate reaches GHz magnitude on Nature, preparation technology and CMOS technology compatibility.The researchist of Cornell university in 2005 reports the high-speed electro-optic modulator based on SOI waveguide micro-ring resonator on Nature.Within 2008, Luxtera company of the U.S. illustrates first piece of silicon-based monolithic integrated high-speed CMOS optical transceiver module manufactured on 130nmCMOS production line in the world to common people, adopts WDM technology, message transmission rate 4 × 10Gbps.The same year, Intel Company reported the silicon-based photonics integration chip adopting modulator array and wavelength-division multiplex MUX/DeMUX, and message transmission rate is 200Gbps.Within 2010, Columbia university of the U.S. cooperates to report with Cornell university the experimental result utilizing silicon-based micro ring modulator to carry out long range propagation.It utilizes a radius to be the silicon-based micro ring electrooptic modulator of 6 microns, successfully achieves the transmission of the 80km of 12.5Gb/s data.Micro-ring electrooptic modulator and LiNbO3-MZI modulator contrast by this article simultaneously, show that silicon-based modulator performance is close to realistic scale.2012, Surrey university of Britain and U.S. Bell laboratory reported the silicon-based modulator experimental result of 50Gb/s in succession.Same in 2013, seminar of Alcatel-Lucent company reports the silicon-based integrated scheme utilizing MZI type silicon-based electro-optical modulator to make coherent light modulator.
In order to reduce the power consumption of modulator, the mode adopting differential modulation is an effective method.Bell laboratory rate has also attempted the scheme adopting differential encoder, result is published in OpitcsExpress20 (6), on 2012 (High-speedlow-voltagesingle-drivepush-pullsiliconMach-Ze hndermodulators).Although it realizes the function of differential modulation, the structure that they realize differential modulation is tandem, and driving voltage is added in two modulation arm with the half of input voltage, thus effective value or original input voltage, can not driving voltage be reduced.
The present invention is directed to above problem, have employed parallel modulated structure, make that two modulation arm all have the effective voltage the same with input voltage, thus reduce driving voltage, finally reduce power consumption.
Summary of the invention
It is simple that fundamental purpose of the present invention is to provide a kind of technique, can reduce the method for silicon-based electro-optical modulator driving voltage simultaneously, thus reach practical object.
For achieving the above object, the invention provides a kind of novel silicon-based integrated differential electrical light modulator structure, this structure adopts the input electrode form of G-S-G, the second layer metal being connected with PN junction phase-shifter is coupled to by capacity coupled mode, and absorbed the high speed signal being transmitted across modulator by terminating resistor, prevent reflected signal from disturbing modulation signal.DC bias networks provides suitable reverse bias to PN junction, and capacity coupled structure make to load the DC network of direct current biasing can not by the earth polar metal institute short circuit of ground floor.Thus make two of silicon-based electro-optical modulator modulation arm all be transfused to electric signal modulation, finally realize differential modulation.
Outstanding advantages of the present invention is: have employed simple semiconductor technology, double layer of metal is utilized to achieve the parallel differential modulation of silicon-based electro-optical modulator, make that two of silicon-based modulator modulation arm have the modulation amplitude the same with input electrical signal, thus making drive singal reduce half, AC power dissipation is reduced to during single armed modulation 1/4th.
Accompanying drawing explanation
Fig. 1 is the structural representation of the silica-based Mach-Zehnder electro-optic modulator of capacitively coupled;
Fig. 2 is the distributed circuit schematic diagram of the silica-based Mach-Zehnder electro-optic modulator of capacitively coupled;
Fig. 3 be with multi-mode interferometer (multi-modeinterference, MMI) based on beam splitter and bundling device operating diagram;
Fig. 4 is the sectional view of modulation arm waveguide, employing be isolate supports substrate (SOI substrate).
Embodiment
From below in conjunction with the mode of accompanying drawing by preferred embodiment, the present invention is described in further detail, above-mentioned purpose of the present invention, scheme and advantage can be made to become more for clear, wherein:
Fig. 1 is the schematic top view of this integrated silica-based differential encoder.The optical texture of device adopts Mach-Zehnder interferometer structure, and electricity structure adopts the form of traveling wave electrode.The top-level metallic of traveling wave electrode adopts the form of GSG, forms a capacitance structure between top-level metallic and underlying metal.Traveling wave electrode underlying metal is connected with PN junction, at the integrated terminating resistor of the other end of traveling wave electrode.The input end AC signal being carried in traveling wave electrode top-level metallic, by the capacitance structure between the top-level metallic of traveling wave electrode and underlying metal, is coupled on PN junction and modulates.By loading DC voltage to terminating resistor, PN junction is made to be operated in reverse state.
Fig. 2 is the distributed circuit figure of this integrated silica-based differential encoder.High speed modulated signal to be coupled in two PN junction modulation arm (when the distributed capacitance that double-level-metal is formed is much larger than the reverse junction electric capacity of PN) by there being double-level-metal to form capacitance structure, is absorbed by terminating resistor at end; This capacitance structure also plays every straight effect simultaneously, thus when making devices function under back-biased condition, whole circuit network does not have short circuit path.Modulate two modulation arm eventually through single drive singal simultaneously.
Fig. 3 be with multi-mode interferometer (multi-modeinterference, MMI) based on beam splitter and bundling device operating diagram.When incident laser is by a MMI, the multimode self-interference of MMI, thus form two the intensity reflection all identical with phase place at output port.Achieve the beam splitting effect of 1: 1.The MMI bundling device course of work is the inverse process of MMI beam splitter.According to light path principle of reversibility, a relevant conjunction bundle process namely can be realized.
Fig. 4 is the sectional view of modulation arm waveguide, employing be isolate supports substrate (SOI substrate).First on substrate, etch ridge waveguide structure, and do corresponding doping, form the structure of P-N-P-N.Deposit one deck SiO
2form the upper limiting layer of waveguide, and as the separation layer of both positive and negative polarity.Last etch lead hole, and form first layer metal electrode pattern.Deposit one deck dielectric material is (as SiO again
2, SiN etc.) and as the separation layer between double layer of metal, depositing metal also etches the pattern forming second layer metal on the dielectric material, the capacity coupled travelling wave electric pole structure of final formation.
In monocrystalline silicon, the most effective electrooptical effect is exactly plasma dispersion effect.1987, the people such as Soref utilized the experimental data of Kramers-Kronig relation and optical absorption spectra, had drawn the approximate formula of plasma dispersion effect.For the light that wavelength is 1.55 μm, dispersion relation expression formula is:
Δn＝Δn
e+Δn
h＝-[8.8×10
-22·ΔN
e+8.5×10
-18·(ΔN
h)
0.8]
Wherein Δ n and be respectively the change that free carrier concentration changes refractive index and the absorption coefficient caused, Δ N
ewith Δ N
hbe respectively the concentration change in electronics and hole, unit is cm
-3.When carrier concentration changes into 10
18cm
-3, the refraction index changing produced can reach-10
-3.Compared with Kerr effect or Franz-Keldysh effect, the variations in refractive index that plasma dispersion effect produces has exceeded two orders of magnitude.Therefore, silica-based at present high-speed modulator realizes mainly through plasma dispersion effect.For the ease of integrated on chip, the size of device becomes a crucial index.Nature since 2005 reports the result of Cornel university about PIN structural, and in view of the heat sensitivity of micro-ring resonator structure, the modulator of PIN electricity structure and Mach-Zehnder optical texture is considered to be applicable to integrated working environment on sheet.Although PIN structural has higher modulation efficiency, can reduce size, its speed is limited by the Carrier recombination process in its electricity course of work, can not get effective raising always.Within 2007, Intel Company reports the silicon-based electro-optical modulator based on reverse PN junction, and modulation rate reaches 30Gbps.But oppositely the power consumption of PN type modulator is higher, the mode of differential modulation is adopted to be reduce the effective ways of modulator power consumption.
Basic electricity structure of the present invention is P-N-P-N, electrode structure is parallel capacitively coupled traveling wave electrode, thus avoid the situation that tandem differential encoder only gets the driving voltage of 50% in modulation arm, make there is 100% driving voltage in each modulation arm.Adopt the traveling wave electrode of capacitance coupling type and corresponding biasing networks, the high-speed electrical signals after modulation arm can be made to be completely absorbed and corresponding bias voltage can be loaded to each modulation arm, thus make device can high speed operation, driving voltage reduces half, and AC power dissipation reduces by 3/4ths.
Following steps can be adopted in element manufacturing to carry out:
Step 1: choose the thick 220nm of top layer Si, buried regions SiO
2eight inches of SOI wafer of thick 2 μm, first use the ducting layer of deep-UV lithography and dry etching making devices, and the etching depth of silicon is 150nm;
Step 2: alignment is carried out to the ducting layer that the 1st step obtains, definition ridge waveguide and the conversion of slab waveguide and the figure in slab waveguide region, in this step, the etching depth of Si is 70nm, and the formation of this step is for the structure of the end face rectangular waveguide that is coupled and MMI;
Step 3: utilize photoresist to make mask, etching N-type gently mixes window, and carry out ion implantation subsequently, concentration is generally less than 8 × 10
17cm
-3;
Step 4: utilize photoresist to make mask, etching P type gently mixes window, and carry out ion implantation subsequently, concentration is; 1 × 10
18cm
-3, now just define the structure of PN;
Step 5: utilize photoresist to make mask, etching N ++ doping hole, carry out ion implantation subsequently, concentration is 5.5 × 10
20cm
-3;
Step 6: utilize photoresist to make mask, etching P++ doping hole, carry out ion implantation subsequently, concentration is 5.5 × 10
20cm
-3;
Step 7: the SiO that deposit 1.5 μm is thick
2as waveguide and thermoae between separation layer;
Step 8: deposit terminating resistor metal, etched ends connecting resistance pattern;
Step 9: open doped region fairlead, makes the first layer metal be connected with PN;
Step 10: deposit one deck dielectric material, as the dielectric layer of capacitance structure;
Step 11: depositing metal, as second layer metal, makes lead-in wire electrode;
Step 12: carry out deep etching to I/O Waveguide end face, improves the coupling efficiency of optical fiber and chip.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. a silicon-based integrated differential electrical photomodulator, its optics basic structure is mach-zehnder interferometer configuration, comprise two phase displacement arm, capacitance coupling type electrode, terminating resistor, DC bias networks, wherein the electrode structure of capacitance coupling type adopts coplanar waveguide structure, and form is " earth polar-pickup electrode-earth polar " (G-S-G), two phase displacement arm lay respectively between earth polar and two gaps of pickup electrode, carry out phase-modulation, and phase displacement arm inside has PN junction phase-shifter, and the traveling wave electrode of PN junction phase-shifter is double-level-metal form, and this double layer of metal have employed capacitive coupling form, modulation signal is coupled to the second layer metal being connected with PN junction phase-shifter by capacity coupled mode, the integrated terminating resistor of the other end absorbs the high-speed electrical signals transmitted along second time metal electrode, prevent signal reflex from producing interference, there is provided suitable reverse bias by adding DC bias networks to these two terminating resistors to PN junction simultaneously, and capacity coupled structure make to load the DC network of direct current biasing can not by the earth polar metal institute short circuit of ground floor, thus make two of silicon-based electro-optical modulator modulation arm all be transfused to electric signal modulation, finally realize differential modulation.
2. differential electrical photomodulator silicon-based integrated as claimed in claim 1, it is characterized in that, the electric signal of input is single-ended signal, and single-ended input electrical signal is ac-coupled in two modulation arm by capacitor type metal electrode, modulates two phase displacement arm simultaneously.
3. silicon-based integrated differential electrical photomodulator according to claim 1, is characterized in that, when adding electrical signals, under the state that PN junction is in reverse biased, and another is in the state not having reverse voltage, thus produces the effect of differential modulation.
4. silicon-based integrated differential electrical photomodulator according to claim 1, is characterized in that, this structure is also suitable for PIN junction, MOS and capacitive based semiconductor structure.
5. the preparation method of differential electrical photomodulator silicon-based integrated as claimed in claim 1, comprises the steps:
Step 1: choose the thick 220nm of top layer Si, buried regions SiO
2eight inches of SOI wafer of thick 2 μm, first use the ducting layer of deep-UV lithography and dry etching making devices, and the etching depth of silicon is 150nm;
Step 2: alignment is carried out to the ducting layer that the 1st step obtains, definition ridge waveguide and the conversion of slab waveguide and the figure in slab waveguide region, in this step, the etching depth of Si is 70nm, and the formation of this step is for the structure of the end face rectangular waveguide that is coupled and MMI;
Step 3: utilize photoresist to make mask, etching N-type gently mixes window, and carry out ion implantation subsequently, concentration is less than 8 × 10
17cm
-3;
Step 4: utilize photoresist to make mask, etching P type gently mixes window, and carry out ion implantation subsequently, concentration is; 1 × 10
18cm
-3, now just define the structure of PN;
Step 5: utilize photoresist to make mask, etching N ++ doping hole, carry out ion implantation subsequently, concentration is 5.5 × 10
20cm
-3;
Step 6: utilize photoresist to make mask, etching P++ doping hole, carry out ion implantation subsequently, concentration is 5.5 × 10
20cm
-3;
Step 7: the SiO that deposit 1.5 μm is thick
2as waveguide and thermoae between separation layer;
Step 8: deposit terminating resistor metal, etched ends connecting resistance pattern;
Step 9: open doped region fairlead, makes the first layer metal be connected with PN;
Step 10: deposit one deck dielectric material, as the dielectric layer of capacitance structure;
Step 11: depositing metal, as second layer metal, makes lead-in wire electrode;
Step 12: carry out deep etching to I/O Waveguide end face, improves the coupling efficiency of optical fiber and chip.
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| CN105974613A (en) * | 2016-07-15 | 2016-09-28 | 北京大学 | Electrooptical lumped modulator |
| CN106646931A (en) * | 2016-12-21 | 2017-05-10 | 武汉邮电科学研究院 | GSG track type radio-frequency electrode, silicon-based traveling wave electrode light modulator and preparation method |
| WO2017211158A1 (en) * | 2016-06-10 | 2017-12-14 | Huawei Technologies Co., Ltd. | Optical interferometer device tolerant to inaccuracy in doping overlay |
| CN107611775A (en) * | 2017-09-28 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser and preparation method thereof |
| WO2018014302A1 (en) * | 2016-07-21 | 2018-01-25 | 华为技术有限公司 | Electro-optic modulator |
| JP2018097093A (en) * | 2016-12-09 | 2018-06-21 | 日本電信電話株式会社 | Optical modulator |
| CN108681109A (en) * | 2018-04-28 | 2018-10-19 | 北京协同创新研究院 | A kind of depletion type traveling wave silicon substrate Mach increasing Dare electrooptic modulator |
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