CN104301041B - Silicon substrate integrated coherent light transmitter chip and transmitter - Google Patents
Silicon substrate integrated coherent light transmitter chip and transmitter Download PDFInfo
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- CN104301041B CN104301041B CN201410539951.6A CN201410539951A CN104301041B CN 104301041 B CN104301041 B CN 104301041B CN 201410539951 A CN201410539951 A CN 201410539951A CN 104301041 B CN104301041 B CN 104301041B
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Abstract
The invention discloses a silicon substrate integrated coherent light transmitter chip and a transmitter. The silicon substrate integrated coherent light transmitter chip comprises an optical coupler, a light beam splitter, a light beam combining device, a silicon substrate modulator, a fixed phase drift device and a coupling polarization beam combining device. The optical coupler is used for achieving coupling of input end light. The light beam splitter and the light beam combining device are used for achieving the beam splitting and beam combining functions of optical signals. The silicon substrate modulator is a core modulator part, and is used for achieving the function of loading electrical signals to the optical signals, and generation of modulation signal light is finished. The fixed phase drift device is used for achieving fixed rotating of the phase position of the optical signals. The coupling polarization beam combining device is used for combining two paths of signal light with the transverse electric (TE) polarization state into one path of transverse electric and magnetic field (TEM) signal light. The silicon substrate integrated coherent light transmitter chip and the transmitter are suitable for an optical communication system with multi-phase-position modulating and polarization multiplexing, and have the advantages that cost is low, the CMOS technology is compatible, achieving is easy, integrity is high, and packaging is easy.
Description
Technical field
The present invention relates to coherent light emission machine technology field, it is more particularly to a kind of silicon substrate integrated coherent light emission movement piece
And emitter.
Background technology
Optic communication is just sent out towards higher spectrum efficiency, more low energy consumption, longer distance, more jumbo high-speed optical transmission system
Exhibition.At present, the sustainable development with high bandwidth new business drives, and the application demand based on 100gb/s high-speed transfer is increasingly bright
Aobvious.Typical case as Huawei dutch royal kpn telecommunications group 100gb/s dispose, A Lang French completel 100gb/s
Upgrading, 100g deployment of Hong Kong New World telecommunications etc..After the domestic test checking in the first round, have started to build commercial network.
Wherein, China Mobile has taken the lead in having carried out the extensive bid of 100g equipment, and China Telecom also formally opens at the beginning of 2013
The commercial deployment of dynamic 100g equipment.Wherein, one of most important equipment in 100g high speed transmission system is optical transceiver.
Infonetics light chief analyst andrew schmitt represents that " 100g optical transceiver is being had an effect for 2012.Although city
Also in the initial stage, increasing also will be relatively slower, but relevant 100g shipment amount has walked upper rail, and growth in 2013 will exceed 1 for field
Times, will double again within 2014." in 100g optical transceiver, modulation and coherent reception optical module are basis and core.But it is existing
Commercial light transmitter/receiver all built by discrete device, efficiency is low, high cost, cannot be integrated, volume and power consumption become
For being badly in need of the bottleneck problem solving.And from the point of view of the history of optic communication, each milestone formula development of optic communication all relies on
The breakthrough of basic photonic device.Currently a development trend of optic communication is, similar to electric integrated circuit and on-chip system one
Sample, optical communication system also will gradually be integrated on single opto chip, only integrated just enable high density, low cost,
Low energy consumption, meets the demand of Future Information social enviroment protection green.Therefore inexpensive, highly integrated silicon based opto-electronicses is learned several recently
Year flourishes, and becomes the study hotspot of optic communication, optoelectronic areas.A few days ago, the portion of techniques index of silicon based optoelectronic devices
Reach the level of commercial devices, and because itself and cmos are compatible, can be with large-scale integrated, the advantage of low cost becomes industry
With the important solutions of the 100g optical-elec-tronic integrated chip of scientific research institution common concern, everybody also generally believes silicon based opto-electronicses collection
One-tenth technology will become a revolutionary technology of optical communication field.
Abroad, especially the U.S., the larger communication company of Japan also actively develop silicon substrate research work recent years.Day
This fujikura (Teng Cang) company achieves the encapsulation of single silicon-based modulator, and device ook modulation rate has exceeded 30gb/s,
And the qpsk modulation of 60gb/s was achieved in 2013.Bell lab took the lead in achieving based on silicon substrate mzi modulator in 2012
Single-chip integration 112-gb/s pdm-qpsk transmitting chip, and achieved in 2013 224gb/s pdm-16qam transmitting work(
Energy.
The pdm-qpsk emitter chip schematic diagram that bell lab realizes is as shown in figure 1, adopt multi-mode interferometer (mmi) coupling
Clutch is restrainted the beam splitting and conjunction to enter traveling optical signal, and modulator part drives silicon-based modulator using single, by two bpsk modulators
Produce QPSK (qpsk) signal in conjunction with heat phase shifter, wherein one road signal in two qpsk signals is passed through polarization
Circulator (pr) is tm polarization state from te polarization converted, by polarized light beam combining device by the qpsk of te polarization state and tm polarization state
It is combined generation polarization multiplexing-QPSK (pdm-qpsk) signal.
Wherein, although single to drive silicon-based modulator to have the advantages that few using rf drive signal port number, due to list
Road rf signal voltage needs to be loaded into and is driven on two modulators, therefore higher to single channel rf signal output amplitude requirement,
Silicon-based modulator half-wave voltage is generally larger at present, and high frequency rf signal amplifier output amplitude is limited, drives silicon substrate using single
Modulator is difficult to realize larger extinction ratio thus obtaining high-quality modulated signal, and single driving modulator is to realize relatively to a high-profile
Efficiency processed, often size is larger, length is longer.In addition, using the conversion carrying out polarization state in a road signal wherein by pr,
Because pr can introduce extra loss, therefore theoretically just do not enable two-way different polarization states signal work(in dual-polarization signal
Rate equilibrium is equal, simultaneously because the pr of completely compatible cmos technique there is no breakthrough at present, therefore bell lab adopts
Pr technique is realized complex, is that large-scale mass production also brings certain difficulty.
Content of the invention
(1) technical problem to be solved
The technical problem to be solved in the present invention is how construction structure is simple, integrated level is high, small volume, and power is high simultaneously
Coherent light emission machine.
(2) technical scheme
In order to solve above-mentioned technical problem, the invention provides a kind of silicon substrate integrated coherent light emission movement piece, including light
Coupler, beam splitter, combiner device, silicon-based modulator, fixed phase shifter and coupling polarization beam combiner；
Te polarised light is coupled into by described photo-coupler, and is divided into the equal light of four beam powers by described beam splitter,
Respectively enter afterwards described in one be sequentially output after silicon-based modulator is processed the first modulated signal light, the second modulated signal light, the 3rd
Modulated signal light and the 4th modulated signal light；After described first modulated signal light is processed through fixed phase shifter described in, with institute
State the second modulated signal light to carry out closing bundle by combiner device described in；Described 3rd modulated signal light is through fixed phase drift described in
After device is processed, carry out closing bundle by combiner device described in described 4th modulated signal light；Projected by described combiner device
Light enters described coupling polarization beam combiner, obtains coherent modulation flashlight after carrying out polarization converted and combiner process, and
It is coupled to optical fiber.
Preferably, described photo-coupler, beam splitter, combiner device, silicon-based modulator, fixed phase shifter and coupling are inclined
The light path shaken between bundling device forms light connects passage by planar optical waveguide.
Preferably, the light that described photo-coupler is coupled into first passes around beam splitter described in and is divided into two beam powers equal
Light, the equal light of described two beam powers is divided into the equal light of four beam powers respectively through beam splitter described in.
Preferably, realize entering the phase of the two-beam that described combiner device carries out conjunction bundle by adjusting described fixed phase shifter
Move difference and be 90 degree.
Preferably, described silicon-based modulator is used for the function of realizing electric signal is loaded into optical signal, and it includes modulating light
Beam splitter, silicon substrate phase shifter, modulation fixed phase shifter and modulation combiner device；
The light entering described silicon-based modulator is divided into the equal two-beam of power through described modulation beam splitter, and respectively
Enter silicon substrate phase shifter described in, the output light path of one of described silicon phase-shifter arrange described modulation fixed phase shifter,
The light of another described silicon phase-shifter output all enters described modulation combiner device with the light of described modulation fixed phase shifter output
Carry out projecting after closing bundle；
By adjusting the voltage being loaded on the fixing silicon phase-shifter of described modulation, make another described silicon phase-shifter output
There is the phase shift difference of 180 degree between the light of light and the output of described modulation fixed phase shifter.
Preferably, described silicon substrate phase shifter is Mach-Zehnder interferometer (mzi) structure；Described silicon-based modulator is to use groove
The list of line gs structure electrode drives modulator or the Dual Drive modulator using co-planar waveguide gsg structure electrode.
Preferably, described photo-coupler is the photo-coupler of one-dimensional grating structure, and described one-dimensional grating is is full etching light
Grid, shallow etched diffraction grating, uniform grating, or binary blazed grating.
Preferably, described combiner device is the combiner device of multi-mode interferometer or the combiner device of y branch；Described smooth beam splitting
Device is the beam splitter of multi-mode interferometer or the beam splitter of y branch.
Preferably, described fixed phase shifter and modulation fixed phase shifter are used to realize the fixed phase drift of optical signal.
Preferably, described coupling polarization beam combiner is brilliant by etching period two-dimensional photon on silicon chip on insulator
Body structure is formed, and Qi Jiang mono- road te polarization state flashlight is converted to tm polarization state flashlight, carries out combiner afterwards.
A kind of integrated coherent light emission machine of silicon substrate, including a kind of silicon substrate integrated coherent light emission movement piece described above.
(3) beneficial effect
The invention provides a kind of integrated coherent light emission movement piece of silicon substrate and emitter, have the advantage that
By adopting dual drive silicon-based modulator, realize larger modulation depth, thus producing higher high-quality of signal to noise ratio
Amount modulated signal, and on the premise of ensuring signal quality, can effectively shorten modulator length, thus realize size little,
Reduce the purpose of integrated cost；
Coupling polarization beam combiner using two-dimensional grating realizes te polarization state to the conversion of tm polarization state, it is possible to achieve two-way
The power equalization of different polarization states flashlight is equal, two-dimensional grating technique completely compatible cmos technique, and processing is simple, keeps away meanwhile
Exempt to adopt polarization converter, decreased unit component quantity, beneficial to integrated, and reached the purpose reducing integrated cost；
All unit components of the present invention are all realized with silica-base material, and silicon materials abundance is with low cost, and is adopted
Processing technology and existing microelectronic processing technology compatible, be easy to produce in batches；
The present invention constitutes simple, integrated level height, achieves the integrated of all unit components of optical sender on one chip,
Overcome in conventional optical communication systems the impact of connective stability between discrete device job stability and device it is ensured that work
Stability.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the pdm-qpsk emitter chip structure schematic diagram prepared by AT＆T Labs；
Fig. 2 is a kind of structural representation of silicon substrate integrated coherent light emission movement piece of the present invention；
Fig. 3 is a kind of silicon-based modulator structure schematic diagram of silicon substrate integrated coherent light emission movement piece of the present invention；
Fig. 4 is a kind of photo-coupler structural representation of silicon substrate integrated coherent light emission movement piece of the present invention；
Fig. 5 is a kind of combiner device of silicon substrate integrated coherent light emission movement piece of the present invention or the structure of beam splitter is shown
It is intended to；
Fig. 6 is a kind of coupling polarization beam combiner structural representation of silicon substrate integrated coherent light emission movement piece of the present invention；
Fig. 7 is a kind of Planar Optical Waveguide Structures schematic diagram of silicon substrate integrated coherent light emission movement piece of the present invention；
Fig. 8 is a kind of modulation fixed phase shifter of silicon substrate integrated coherent light emission movement piece and the fixed phase drift of the present invention
The structural representation of device.
Specific embodiment
With reference to the accompanying drawings and examples the present invention is described in further detail.Following examples are used for this is described
Bright, but can not be used for limiting the scope of the present invention.
The invention discloses a kind of integrated coherent light emission movement piece of silicon substrate, as shown in Fig. 2 it includes photo-coupler 1, light
Beam splitter 2, combiner device 5, silicon-based modulator 3, fixed phase shifter 4 and coupling polarization beam combiner 6；
Te polarised light is coupled into planar optical waveguide by described photo-coupler 1, and is divided into four bundle work(by described beam splitter 2
The equal light of rate, respectively enters afterwards and is sequentially output the first modulated signal light, the second modulation after silicon-based modulator 3 described in is processed
Flashlight, the 3rd modulated signal light and the 4th modulated signal light；Described first modulated signal light is through fixed phase shifter 4 described in
After process, carry out closing bundle by combiner described in one 5 device with described second modulated signal light；Described 3rd modulated signal light is through one
After described fixed phase shifter 4 is processed, carry out closing bundle by combiner device 5 described in described 4th modulated signal light；By described
The light that combiner device projects enters described coupling polarization beam combiner 6, obtains phase after carrying out polarization converted and combiner process
Dry modulated signal light, and it is coupled to optical fiber.Described photo-coupler 1, beam splitter 2, combiner device 5, silicon-based modulator 3, fixation
Light path between phase-shifter 4 and coupling polarization beam combiner 6 forms light connects passage by planar optical waveguide, adopts in the present invention
Te optical plane fiber waveguide forms light connects passage.
The light that described photo-coupler is coupled into first passes around beam splitter 2 described in and is divided into the equal light of two beam powers, institute
State the equal light of two beam powers and be divided into the equal light of four beam powers respectively through beam splitter described in one 2.Described solid by adjusting
The phase shift difference determining the two-beam that the phase-shifter 4 realization described combiner device of entrance carries out conjunction bundle is 90 degree.
Described photo-coupler is used for realizing input optical coupling, can reach raising coupling efficiency, reduce transmitting movement
The purpose of piece overall losses；Beam splitter, combiner device are used for realizing optical signal beam splitting, close beam function；Four silicon-based modulator
It is used for realizing electro-optic conversion for core modulator part, complete the generation of modulated optical signal；Fixed phase shifter is used for realizing light letter
The fixing rotation of number phase place；It is a road tem polarization state that coupling polarization beam combiner is used for the signal combiner of two-way te polarization state
Flashlight, implementation method is wherein one road te polarization state signal to be converted to tm polarization state, thus realizing dual-polarization flashlight
The function of conversion, and realize the function optically coupling to optical fiber for the signal.
All devices of the present invention include all using silica-base material, and described silica-base material refers to silicon (soi) material on insulator
Material, or body silicon materials, or the compound semiconductor materials on silicon substrate.
Described silicon-based modulator is used for the function of realizing electric signal is loaded into optical signal, it include modulating beam splitter 7,
Silicon substrate phase shifter 8, modulation fixed phase shifter 9 and modulation combiner device 10, as shown in Figure 3；Enter described silicon-based modulator
Light is divided into the equal two-beam of power through described modulation beam splitter 7, and respectively enters silicon substrate phase shifter 8 described in, wherein
Described modulation fixed phase shifter 9 is arranged on the output light path of one described silicon phase-shifter 8, another described silicon phase-shifter 8 exports
Light with described modulation fixed phase shifter 9 output light all enter described modulation combiner device carry out close bundle after project；Pass through
Adjust the voltage being loaded on the fixing silicon phase-shifter of described modulation, make the light of another described silicon phase-shifter output and described modulation
There is the phase shift difference of 180 degree between the light of fixed phase shifter output.Described silicon substrate phase shifter is that Mach-Zehnder interferometer (mzi) is tied
Structure；Described silicon-based modulator is to drive modulator using the list of the line of rabbet joint (gs) structure electrode or use co-planar waveguide (gsg) structure
The Dual Drive modulator of electrode.The light path that described silicon-based modulator is realized by silicon waveguide 11 between a device connects.Above-mentioned solid
Determine phase-shifter 4 and modulation fixed phase shifter 9 all can be solid using all achievable optical signals such as injection phase shifter, heat phase shifter
The mode determining phase shift is realized.
Adopt four silicon-based modulator in the present invention, be wherein a pair two-by-two, be respectively used to produce two-way te polarization state
Relevant light modulating signal.The relevant light modulating signal of each road te polarization state by two silicon-based modulator produce respectively homophase and
Orthogonal two paths of signals closes Shu Zucheng.
Described photo-coupler be one-dimensional grating structure photo-coupler, as shown in figure 4, for a kind of on soi preparation one
Dimension grating, the bottom is silicon substrate, and silicon substrate upper strata is silicon dioxide insulating layer, and top layer silicon is passed through periodically etching and formed grating
Structure, realizes optical coupling by described one-dimensional grating, and described one-dimensional grating is is full etching grating, shallow etched diffraction grating, uniform light
Grid, or binary blazed grating.During reality processing, can by control etching depth, screen periods, the parameter such as grating dutycycle Lai
Control the parameters such as coupling efficiency and the spectral width of one-dimensional grating.
Described combiner device is the combiner device of multi-mode interferometer or the combiner device of y branch, and described beam splitter is many
The combiner device of Mode interference instrument or the combiner device of y branch, as shown in figure 5, beam splitter adopts 1x2mmi to realize, reality processing
When by change 1x2mmi structure realize a road light is uniformly divided into the function of two-way.
Silicon substrate phase shifter in described silicon-based modulator adopts plasma dispersion effect to realize, its schematic cross-section such as Fig. 8
Shown, the realization of silicon substrate phase shifter, based on the silicon waveguide prepared on soi, is realized by carrying out ion implanting in waveguide region
Plasma dispersion effect, as protective layer, metal is used for preparing electrode the silica on waveguide upper strata, and leads with doped region
Logical.Waveguide region adopt pn/pin doped structure, both sides p+, n+ doped region adopt macroion doping content, thus reach with
Metal electrode forms the purpose of Ohmic contact.During reality processing, can be by changing waveguide region p doped region size, n doping
The parameter such as area size and center intrinsic region size is controlling the parameters such as modulation efficiency, the loss of phase-shifter.Pushed up by changing
The parameter such as width of the spacing between layer metal electrode and metal electrode is realizing more preferable high frequency modulated effect.
Described coupling polarization beam combiner is by etching period two-dimensional photon crystal structure on silicon chip on insulator
Formed, Qi Jiang mono- road te polarization state flashlight is converted to tm polarization state flashlight, carry out combiner afterwards, form tem polarization state
Flashlight, as shown in fig. 6, lattice period be equal to silicon waveguide in te pattern wavelength, during reality processing can by control light
The parameters such as the etching depth of sub- crystal are controlling the parameters such as coupling efficiency and the score ratio of two-dimensional grating.
Fig. 7 is a kind of Planar Optical Waveguide Structures schematic diagram of silicon substrate integrated coherent light emission movement piece of the present invention, adopts
Prepared by soi material, form waveguide by top layer silicon is carried out with local etching.During reality processing can by change duct width,
The parameters such as etching depth controlling the restriction to different polarization states optical signal for the waveguide, thus reducing the purposes such as waveguide loss.
A kind of silicon substrate integrated coherent light emission machine chip surface of the present invention can cover other protection materials it is also possible to not
Cover other protection materials.
Invention additionally discloses a kind of integrated coherent light emission machine of silicon substrate, it includes a kind of above-mentioned integrated coherent light of silicon substrate and sends out
Penetrate movement piece.
Embodiment of above is merely to illustrate the present invention, rather than limitation of the present invention.Although with reference to embodiment to this
Bright be described in detail, it will be understood by those within the art that, technical scheme is carried out various combinations,
Modification or equivalent, without departure from the spirit and scope of technical solution of the present invention, the right that all should cover in the present invention will
Ask in the middle of scope.
Claims (10)
1. a kind of integrated coherent light emission movement piece of silicon substrate it is characterised in that include photo-coupler, beam splitter, combiner device,
Silicon-based modulator, fixed phase shifter and coupling polarization beam combiner；
Te polarised light is coupled into by described photo-coupler, and is divided into the equal light of four beam powers by described beam splitter, afterwards
Respectively enter after silicon-based modulator described in is processed and be sequentially output the first modulated signal light, the second modulated signal light, the 3rd modulation
Flashlight and the 4th modulated signal light；After described first modulated signal light is processed through fixed phase shifter described in, with described the
Two modulated signal lights carry out closing bundle by combiner device described in；Described 3rd modulated signal light through fixed phase shifter described at
After reason, carry out closing bundle by combiner device described in described 4th modulated signal light；Entered by the light that described combiner device projects
Enter described coupling polarization beam combiner, carry out polarization converted, the signal combiner of two-way te polarization state is a road tem polarization state
Flashlight, combiner obtains coherent modulation flashlight after processing, and is coupled to optical fiber.
2. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 1 is it is characterised in that described optical coupling
Light path between device, beam splitter, combiner device, silicon-based modulator, fixed phase shifter and coupling polarization beam combiner is passed through flat
Face fiber waveguide forms light connects passage.
3. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 1 and 2 is it is characterised in that described optocoupler
The light that clutch is coupled into first passes around beam splitter described in and is divided into the equal light of two beam powers, the equal light of described two beam powers
It is divided into the equal light of four beam powers respectively through beam splitter described in.
4. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 3 is it is characterised in that described silicon substrate is modulated
Device is used for the function of realizing electric signal is loaded into optical signal, and it includes modulating beam splitter, silicon substrate phase shifter, modulation fixing phase
Move device and modulation combiner device；
The light entering described silicon-based modulator is divided into the equal two-beam of power through described modulation beam splitter, and respectively enters
Silicon substrate phase shifter described in one, the output light path of one of described silicon substrate phase shifter arranges described modulation fixed phase shifter, separately
The light that the light of one described silicon phase-shifter output is exported with described modulation fixed phase shifter all enters described modulation combiner device and enters
Row projects after closing bundle；
By adjusting the voltage being loaded on the fixing silicon phase-shifter of described modulation, make the light of another described silicon phase-shifter output with
There is the phase shift difference of 180 degree between the light of described modulation fixed phase shifter output.
5. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 4 is it is characterised in that described silicon substrate phase shift
Device is Mach-Zehnder interferometer structure；Described silicon-based modulator is to drive modulator or use using the list of line of rabbet joint gs structure electrode
The Dual Drive modulator of co-planar waveguide gsg structure electrode.
6. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 4 is it is characterised in that described photo-coupler
For the photo-coupler of one-dimensional grating structure, described one-dimensional grating is full etching grating, shallow etched diffraction grating, uniform grating, or binary
Balzed grating,.
7. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 4 is it is characterised in that described combiner device
Combiner device for multi-mode interferometer or the combiner device of y branch；Described beam splitter is beam splitter or the y of multi-mode interferometer
The beam splitter of branch.
8. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 4 is it is characterised in that described fixed phase drift
Device and modulation fixed phase shifter are used to realize the fixed phase drift of optical signal.
9. the integrated coherent light emission movement piece of a kind of silicon substrate according to claim 4 is it is characterised in that described coupling polarizes
Bundling device is to be formed by etching period two-dimensional photon crystal structure on silicon chip on insulator, Qi Jiang mono- road te polarization state
Flashlight is converted to tm polarization state flashlight, carries out combiner afterwards.
10. a kind of integrated coherent light emission machine of silicon substrate is it is characterised in that include a kind of silicon described in any one of claim 1 to 9
Basis set becomes coherent light emission movement piece.
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