CN110221385B - Waveguide integrated multimode electro-optic modulator based on graphene and manufacturing method thereof - Google Patents
Waveguide integrated multimode electro-optic modulator based on graphene and manufacturing method thereof Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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Abstract
The invention discloses a waveguide integrated multimode electro-optic modulator based on graphene and a manufacturing method thereof. The modulator comprises a first graphene nanoribbon layer, a second graphene nanoribbon layer, an insulator cladding, a multi-mode ridge waveguide, a first electrode pair, a second electrode pair, a third electrode pair, an insulating layer and a substrate layer; the multimode ridge waveguide supports two transverse electric modes (TE), TE0Die and TE1The molds are simultaneously transported; the first graphene nanoribbon layer and the second graphene nanoribbon layer are integrated above the multimode ridge waveguide; the insulator cladding is used for realizing the electric isolation of the multi-mode ridge waveguide from the first graphene nano-strip layer and the second graphene nano-strip layer; the first electrode pair is connected with the first graphene nano belt layer, and the second electrode pair is connected with the second graphene nano belt layer. And the third electrode pair is connected with the multi-mode ridge waveguide and used for providing back gate voltage for the graphene.
Description
Technical Field
The invention relates to the technical field of integrated optics, in particular to a waveguide integrated multimode electro-optic modulator based on graphene and a manufacturing method thereof.
Background
Graphene-silicon based hybrid integrated optical circuits have attracted considerable attention over the last few years. Due to the fact that the graphene has ultrahigh carrier mobility and adjustable Fermi level, absorption of the graphene to light can be adjusted rapidly through an energy band filling effect, and the graphene can be used for developing high-speed photoelectric integrated devices. In addition, by combining graphene with a silicon waveguide, light propagating in the silicon waveguide can interact with surface-integrated graphene through evanescent fields. The structure makes full use of the unique physical characteristics of the single atomic layer graphene, and meanwhile, the structure is not influenced by weak light-substance interaction in the graphene with the atomic layer thickness. To date, based on a graphene-silicon-based hybrid integrated optical circuit, researchers have designed and manufactured various optoelectronic integrated devices, including high-speed electro-optical modulators, ultrafast photodetectors, tunable delay lines, and the like.
On the other hand, mode division multiplexing, which is a multiplexing technique for expanding channel capacity, is widely studied and applied to the fields of high-speed communication, optical interconnection, and the like. Compared with the traditional multiplexing technology (such as wavelength division multiplexing), the mode division multiplexing technology uses a single-wavelength light source to expand the data communication bandwidth by multiplexing a spatial mode, thereby effectively reducing the cost and the thermal effect of a chip. In recent years, the mode division multiplexing technology has been widely studied, and in 2014, L-w. Luo et al, the university of cornell, developed a micro-ring based on-chip mode division multiplexing system (Nature Communications, 5, 3069, 2014). In 2017, a 2 × 2 single-mode optical switch for mode division multiplexing optical interconnection was developed by the yankee researchers task group of the chinese academy of sciences, and a 40Gbps data transmission experiment (Optics Express, 25, 17, 20698) was performed. In the same year, a group of teaching subjects of zinc wearing in Zhejiang university developed an on-chip low-loss, low-crosstalk mode demultiplexer (Optics Letters, 42, 12, 2370). However, the mode division multiplexing optical interconnection system formed by the above operation needs to modulate different modes in the waveguide, which increases the number of modulators and (de) multiplexers, increases the equipment cost, and is not favorable for high integration of on-chip devices.
In the patent aspect, in 2014, etispium et al of university at zhejiang has designed a multi-input multi-output optical interconnection transmission system between boards on a chip, so that respective input signals respectively pass through respective signal modulators once and then are input into a transmission module, and a chinese invention patent is applied (201410844296.5). In 2015, the multimode waveguides in the multimode waveguides are coupled with a plurality of resonant cavities respectively, and the multimode waveguides are modulated by the resonant cavities, and the invention patent of China (201511005182.2) is applied. The above approach requires separate modulation of the different modes within the multimode waveguide. Different modes cannot be modulated simultaneously in the same equipment, equipment cost and size are increased to a certain extent, and high integration and temperature control of devices on a chip are not facilitated.
In summary, although the mode division multiplexing technology has been rapidly developed in recent years, the requirement of individual modulation for each mode affects the application of the mode division multiplexing technology in integrated optics. It remains an important task to develop a multimode electro-optic modulator capable of modulating multiple modes simultaneously to reduce cost and device size.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a waveguide integrated multimode electro-optic modulator based on graphene and a manufacturing method thereof.
The purpose of the invention is realized by the following technical scheme:
a waveguide integrated multimode electro-optic modulator based on graphene comprises a first graphene nano-strip layer, a second graphene nano-strip layer, an insulator cladding, a multimode ridge waveguide, a first electrode pair, a second electrode pair and a third electrode pair; the multi-mode ridge waveguide supports two transverse electric modes (TE), namely TE0Die and TE1The molds are simultaneously transported; the first graphene nano-belt layer and the second graphene nano-belt layer are integrated above the multi-mode ridge waveguide, and light transmitted in the multi-mode ridge waveguide interacts with the first graphene nano-belt layer and the second graphene nano-belt layer through an evanescent field; when light enters the optically thinner medium from the optically dense medium and is totally reflected, a part of the light field passes through the interface and enters one side of the optically thinner medium, the part of the light field is called as an evanescent field, and the evanescent field is a light field and is distributed above the waveguide. The first graphene nanoribbon layer and the TE are enabled to be in contact with each other by adjusting the geometric dimensions and the positions of the first graphene nanoribbon layer and the second graphene nanoribbon layer1Mold interaction, second graphene nanoribbon layer with TE0Mold interaction; the insulator cladding is used for realizing the electric isolation of the multi-mode ridge waveguide from the first graphene nano-strip layer and the second graphene nano-strip layer; the first electrode pair is connected with the first graphene nanoribbon layer, the second electrode pair is connected with the second graphene nanoribbon layer, and the first graphene nanoribbon layer (1) and the second graphene nanoribbon layer (2) are adjusted by applying voltage to the first graphene nanoribbon layer and the second graphene nanoribbon layerThe Fermi levels of the nano-strip layer (1) and the second graphene nano-strip layer (2) change the interaction among different spatial modes in the first graphene nano-strip layer, the second graphene nano-strip layer and the multi-mode ridge waveguide, so that the simultaneous modulation of different modes is realized; and the third electrode pair is connected with the multi-mode ridge waveguide and is used for providing back gate voltage for the graphene.
Further, the material of the multi-mode ridge waveguide is made of one of silicon, germanium, silicon-germanium mixture, indium phosphide and gallium arsenide.
Further, the first graphene nanoribbon layer and the second graphene nanoribbon layer are single-layer graphene or more than two layers of graphene.
Furthermore, the multi-mode electro-optic modulator is of a Mach-Zehnder interference structure or a micro-ring resonant cavity structure.
A method for manufacturing a waveguide integrated multimode electro-optic modulator based on graphene comprises the following steps:
(1) manufacturing the multi-mode ridge waveguide on an insulating layer and a substrate layer at the bottom of the multi-mode electro-optic modulator by adopting a nano processing method;
(2) manufacturing an insulator cladding on the multi-mode ridge waveguide by adopting a chemical vapor deposition method, a magnetron sputtering method or a thermal evaporation method;
(3) and manufacturing the first graphene nano-strip layer and the second graphene nano-strip layer in the insulating cladding by adopting a nano-processing method.
And (3) the nano-processing method is completed by combining electron beam exposure and etching, or by combining photoetching and etching, or by adopting focused ion beam manufacturing.
The first graphene nano-strip layer and the second graphene nano-strip layer are transferred to the insulating cladding or directly grown on the insulating cladding.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) compared with the existing silicon-based modulator which is widely used for an on-chip integrated mode division multiplexing system, the multi-mode electro-optical modulator reduces the space size of the on-chip system and improves the integration level of the on-chip system. In the existing on-chip integrated mode division multiplexing system, multiple optical wave modes are respectively modulated by multiple single-mode modulators, and then different modes are coupled into a multi-mode waveguide through multiple couplers. In the present invention, two modes are simultaneously modulated in a multimode waveguide via one multimode modulator, the number of modulators is reduced, and a coupler is not required. Therefore, the scheme of the invention can reduce the space size of the on-chip integrated modular division multiplexing system and is convenient for high-density integration.
(2) Compared with the existing silicon-based modulator on the chip, the invention reduces the power consumption of unit bit transmission and reduces the thermal effect of the modulator. The traditional on-chip silicon-based modulator carries out electro-optical modulation in an ion implantation mode, and the reduction of the power consumption and the control of the thermal effect of unit bit transmission are always one of the key problems in the research of the on-chip silicon-based modulator. In the invention, the Fermi level of the graphene nano belt layer is adjusted through voltage, so that electro-optic modulation is realized, and therefore, the energy consumption and the heat quantity are lower. Meanwhile, the graphene has great carrier mobility, and can realize an electro-optic modulator which is faster than a silicon-based modulator.
(3) Compared with the existing lithium niobate modulator, the manufacturing process of the device is completely compatible with the existing CMOS process, and is beneficial to realizing large-scale mass production.
Drawings
Fig. 1 is a schematic diagram of the principle of the present invention.
Fig. 2 is a schematic structural diagram of a waveguide-integrated mach-zehnder multimode electro-optic modulator based on graphene in embodiment 1 of the present invention.
Fig. 3-1 and 3-2 are mode normalized transmittance simulation results in two modulation states in embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of a waveguide-integrated micro-racetrack resonant cavity multimode electro-optic modulator based on graphene according to embodiment 2 of the present invention.
Fig. 5-1 to 5-4 show the simulation results of the mode normalized transmittance in four modulation states in embodiment 2 of the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Fig. 1 shows a waveguide integrated multimode electro-optic modulator based on graphene according to the present invention, which is fabricated by the following steps: firstly, the multimode ridge waveguide 4 is designed based on a commercial silicon-on-insulator (SOI) wafer and is manufactured on an insulating layer 8 and a substrate layer 9 by adopting a nano processing method; then, the insulator cladding 3 is manufactured on the chip by adopting a chemical vapor deposition method; secondly, manufacturing a second graphene nanoribbon layer 2 on the insulator cladding by adopting a nano processing method; then, the insulator cladding 3 is manufactured on the chip by adopting a chemical vapor deposition method; finally, the first graphene nanoribbon layer 1 is fabricated on the insulator cladding layer 3 by a nanofabrication method.
Example 1
A graphene-based waveguide integrated multimode electro-optic modulator as shown in fig. 2: the width of the graphene of the first graphene nanoribbon layer 1 is 300 nm, the width of the graphene of the second graphene nanoribbon layer 2 is 350 nm, the width of the waveguide is 1 mu m, the height of the multimode ridged waveguide 4 is 250 nm, the waveguide-integrated multimode electro-optic modulator based on the graphene is designed to be a Mach-Zehnder modulator, and the length of two arms is 350 nm. In the initial state, the third electrode 7 provides a back gate voltage by adjusting the voltage of the first electrode pair 5 and the second electrode pair 6, so that the fermi levels of the first graphene nanoribbon layer and the second graphene nanoribbon layer of the two arms are both adjusted to 0.4 eV. 3-1 and 3-2, changing graphene to TE by adjusting the voltage of the first electrode pair to change the Fermi level of the first graphene nanoribbon layer to 0.8eV0And TE1Interaction of the mold due to the first graphene nanoribbon layer and the TE1Strong mold action, TE0Weak mold action, TE1Large optical phase shift of the mode, TE0The optical phase shift of the mode is small, so that TE1Normalized transmittance reduction of mode through mach-zehnder modulator of 8.6 dB，TE0The normalized transmittance of the mode through the Mach-Zehnder modulator is reduced by 1.1 dB, and the extinction ratio between the modes reaches 7.5 dB. Similarly, the Fermi level of the second graphene nano-strip layer is changed to 0.8eV by adjusting the voltage of the second electrode pair so as to change the graphene and the TE0And TE1Interaction of the modes, so that TE0Normalized transmission of the mode through the Mach-Zehnder modulator is reduced by 4.9 dB, TE1The normalized transmittance of the mode through the Mach-Zehnder modulator is reduced by 1.3 dB, and the extinction ratio between the modes reaches 3.6 dB. By comparing the different normalized transmittances of the two modes, the on-off keying modulation can be realized corresponding to two different 0, 1 signal combinations.
Finally, the method of the present embodiment is only a preferred embodiment, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Example 2
A graphene-based waveguide integrated multimode electro-optic modulator as shown in fig. 4: the width of the graphene of the first graphene nano belt layer 1 is 300 nm, the width of the graphene of the second graphene nano belt layer 2 is 350 nm, the width of the waveguide is 1 mu m, the height of the multimode ridge waveguide 4 is 250 nm, the waveguide integrated multimode modulator based on the graphene is designed into a micro-racetrack resonant cavity modulator, the micro-racetrack resonant cavity is one type of micro-ring resonant cavity, the length of a straight waveguide in the micro-racetrack resonant cavity is 228.5 mu m, the semi-circle radius in the micro-racetrack resonant cavity is 30 mu m, and the interval between the straight waveguide of the micro-racetrack resonant cavity and the coupling straight waveguide 10 is 344 nm. 1.55237 μm was chosen as the probe wavelength. As shown in fig. 5-1 to 5-4, in the initial state, the fermi level of the first graphene nanoribbon layer is adjusted to 0.45eV and the fermi level of the second graphene nanoribbon layer is adjusted to 0.46 eV by adjusting the voltages of the first electrode pair 5 and the second electrode pair 6, and simultaneously enabling the third electrode pair 7 to provide a back gate voltage. The resonance wavelengths of the two modes around the detection wavelength are 1.55303 μm and 1.55304 μm, respectively, and the two modes are transmitted at the detection wavelength, and the normalized transmittance of the two modes is 0 dB. Adjusting the voltage of the first electrode pair fromThe Fermi level of the first graphene nano-strip layer is adjusted from 0.45eV to 0.95 eV, and the first graphene nano-strip layer and the TE are changed0Die and TE1Interaction of the mold due to the first graphene nanoribbon layer and the TE1Strong mold interaction with TE0Weak mode action, resulting in TE1Large optical phase shift of the mode, TE0The optical phase shift of the mode is small, the resonant wavelengths of both modes are blue-shifted, but TE1Large blue shift of mode resonance wavelength, TE0The blue shift of the mode resonance wavelength is small, and at the detection wavelength, TE1Reduced by 19.67 dB in normalized-mode transmittance, TE0The modulo normalized transmission is reduced by 0.06 dB. Similarly, when the Fermi level of the first graphene nanoribbon layer is 0.45eV, and the voltage of the second electrode pair is adjusted to adjust the level of the second graphene nanoribbon layer to 1.00 eV, the TE is detected at the wavelength0Mode normalized transmittance reduction of 18.33 dB, TE1The modulo normalized transmission is reduced by 0.07 dB. Similarly, by adjusting the voltages of the first electrode pair and the second electrode pair, the fermi level of the first graphene nanoribbon layer is adjusted to 0.72 eV, and the energy level of the second graphene nanoribbon layer is adjusted to 0.75 eV, and at the detection wavelength, the TE is detected0Mode normalized transmittance reduction of 18.33 dB, TE1The modulo normalized transmission is reduced by 9.26 dB. In the above four cases, by comparing the normalized transmittances in the two modes at the detection wavelength, the on-off keying modulation can be realized corresponding to four different combinations of 0, 1 signals.
Finally, the method of the present embodiment is only a preferred embodiment, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The present invention is not limited to the above-described embodiments. The foregoing description of the specific embodiments is intended to describe and illustrate the technical solutions of the present invention, and the above specific embodiments are merely illustrative and not restrictive. Those skilled in the art can make many changes and modifications to the invention without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (4)
1. A waveguide integrated multimode electro-optic modulator based on graphene is characterized by comprising a first graphene nano-strip layer (1), a second graphene nano-strip layer (2), an insulator cladding (3), a multimode ridge waveguide (4), a first electrode pair (5), a second electrode pair (6), a third electrode pair (7), an insulating layer (8) and a substrate layer (9); the multi-mode ridge waveguide (4) supports the simultaneous transmission of two transverse electric modes (TE) including TE0Die and TE1Molding; the first graphene nano-belt layer (1) and the second graphene nano-belt layer (2) are integrated above the multi-mode ridge waveguide (4), and light propagating in the multi-mode ridge waveguide (4) interacts with the first graphene nano-belt layer (1) and the second graphene nano-belt layer (2) through an evanescent field; the first graphene nanoribbon layer (1) and the TE are enabled to be in contact with each other by adjusting the geometric dimensions and the positions of the first graphene nanoribbon layer (1) and the second graphene nanoribbon layer (2)1Mode interaction, second graphene nanoribbon layer (2) with TE0Mold interaction; the insulator cladding (3) is used for realizing the electric isolation of the multi-mode ridge waveguide (4) from the first graphene nano-strip layer (1) and the second graphene nano-strip layer (2); the first electrode pair (5) is connected with the first graphene nano belt layer (1), the second electrode pair (6) is connected with the second graphene nano belt layer (2), and Fermi levels of the first graphene nano belt layer (1) and the second graphene nano belt layer (2) are adjusted by applying voltage to the first graphene nano belt layer (1) and the second graphene nano belt layer (2), so that interaction among different spatial modes in the first graphene nano belt layer (1), the second graphene nano belt layer (2) and the multi-mode ridge waveguide (4) is changed, and simultaneous modulation of different modes is realized; the third electrode pair (7) is connected with the multi-mode ridge waveguide (4) and is used for providing back gate voltage for the graphene; the insulating layer (8) and the substrate layer (9) are sequentially arranged below the multi-mode ridge waveguide (4).
2. The graphene-based waveguide integrated multimode electro-optic modulator of claim 1, wherein the material of the multimode ridge waveguide (4) is composed of one of silicon, germanium, a silicon-germanium mixture, indium phosphide or gallium arsenide.
3. The graphene-based waveguide integrated multimode electro-optic modulator according to claim 1, wherein the first graphene nanoribbon layer (1) and the second graphene nanoribbon layer (2) are a single layer of graphene or two or more layers of graphene.
4. The graphene-based waveguide integrated multimode electro-optic modulator of claim 1, wherein the multimode electro-optic modulator is a mach-zehnder interference structure or a micro-ring resonator structure.
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