CN102928925A - Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure - Google Patents
Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure Download PDFInfo
- Publication number
- CN102928925A CN102928925A CN2012104084492A CN201210408449A CN102928925A CN 102928925 A CN102928925 A CN 102928925A CN 2012104084492 A CN2012104084492 A CN 2012104084492A CN 201210408449 A CN201210408449 A CN 201210408449A CN 102928925 A CN102928925 A CN 102928925A
- Authority
- CN
- China
- Prior art keywords
- grating
- vertical
- mode
- soi
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a silicon on insulator (SOI)-based opto-isolator based on a symmetrical vertical grating coupling structure. The structure comprises a vertical coupling grating, two mode converters which are manufactured on two sides of the vertical coupling grating respectively to realize approximately loss-free energy transmission and mode conversion, two single-mode ridge waveguides which are connected with one ends of the two mode converters respectively, and an optical beam combiner which is connected with the other ends of the two single-mode ridge waveguides respectively, wherein the vertical coupling grating, the two mode converters, the two single-mode ridge waveguides and the optical beam combiner are manufactured on one substrate. The opto-isolator has the advantages of integration of coupling and optical isolation functions, simplicity in alignment, low insertion loss and compatibility of a manufacturing process and a complementary metal oxide semiconductor (CMOS) process, and is expected to be applied to a future on-chip/inter-chip optical interconnection network.
Description
Technical field
The present invention relates to silicon based photon and learn and chip-scale light interconnection technique, refer more particularly to the SOI base optoisolator based on symmetrical vertical raster coupled structure.
Background technology
Nearly half a century, along with the development of integrated circuit, silica-base material and device technology are very ripe, and along with constantly the dwindling of technology characteristics size, and the integrated level of integrated circuit is also always according to the Moore's Law development that shoots ahead.What the integrated level that chip is higher was brought is not only that the number of transistors purpose increases the especially lifting of chip functions and processing speed.Yet, along with characteristic dimension constantly dwindle continuous increase with integrated level, the limitation of microelectronic technique also becomes clear day by day.Although time-delay and the power consumption of single transistor are more and more less, the time-delay of interconnection line and power consumption are increasing and occupy gradually leading.In current processor, the power consumption that electrical interconnection causes has accounted for more than 80% of whole chip total power consumption.Therefore, can see that electrical interconnection under the deep-submicron characteristic dimension postpones and the bottleneck of power consumption, seriously restrict the further raising of chip performance.So people have invested the light interconnection to sight.Light interconnection can solve the intrinsic bottleneck of electrical interconnection, has the advantages such as high bandwidth, anti-interference and low-power consumption, can be used for clock signal transmission in the System on Chip/SoC, solves phase mutual interference and the clock skew problem of signal.
In recent years, the SOI material since its strong light limitation capability and silicon in the transparent characteristic of optical communicating waveband, become the silicon photon technology platform of a very attractive, and develop very rapid, as if many relevant achievements in succession are suggested and verify, the appearance of grating coupler, MZI modulator, little ring modulator, germanium waveguide photodetector, multiplexing and demultiplexing device etc. has also been declared photoelectron epoch at hand.Yet challenge and difficulty also are huge.Because silicon is the indirect band-gap semiconductor material, can't make semiconductor laser with silicon, causes the disappearance of light source on the sheet, need to the outer light source of sheet be coupled into silicon waveguide on the sheet with modes such as grating coupling or end face couplings.In addition, the active devices such as semiconductor laser, image intensifer are very responsive to reflected light, and reflected light can cause the semiconductor laser oscillating characteristic deteriorated.In the direct modulation of high speed, direct-detection optical communication system, reflected light can produce additional noise, makes the performance degradation of system.Therefore, need to cover the light that will incide optical active component with optoisolator, prevent optical active component device performance degradation.Existing crystal-type optoisolator can be divided into polarization relationship type and polarization independent type according to polarization characteristic, two kinds of isolators all are based on Faraday effect (the Faraday Effect of magneto-optical crystal, a kind of magneto-optic effect), utilize the nonreciprocity of Faraday rotation, allow light to pass through by stoping in the other direction to a direction.Traditional optoisolator volume is large, and cost is high, and manufacture craft can not with the CMOS process compatible, can not accomplish that monolithic is integrated, this has also restricted the realization of light interconnection.
Grating coupler is as the interface of the outer light source of a kind of chip and sheet, and it has large alignment tolerance ability, can arbitrarily place, be easy to realize on-chip testing, need not the advantage such as end face polishing, therefore is considered to coupled apparatus on a kind of sheet of great use.The present invention proposes a kind of SOI base optoisolator based on symmetrical vertical raster coupled structure, and its principle is mainly based on the reflection of catoptrical interference phase slake grating.SOI base grating coupler volume is little, manufacture craft is simple, and with the CMOS process compatible, so this optoisolator based on symmetrical vertical raster coupled structure that the present invention proposes can solve optoisolator and other SOI base photoelectric devices such as the single chip integrated problems such as MZI modulator, germanium silicon detector, have again simultaneously the function of finishing the outer light source of sheet and silicon waveguide-coupled, be expected on the sheet in future/obtain widespread use in the optical interconnection network between sheet.
Summary of the invention
The object of the present invention is to provide a kind of SOI base optoisolator based on symmetrical vertical raster coupled structure, its have coupling integrated with the light isolation features, be easy to aim at, characteristic and advantage that low insertion loss, manufacture craft and CMOS process compatible etc. are potential, be expected on the sheet in future/obtain important application in the optical interconnection network between sheet.
The invention provides a kind of SOI base optoisolator based on symmetrical vertical raster coupled structure, comprising:
A vertical coupled grating;
Two mode converters are produced in the both sides of vertical coupled grating, realize approximate loss-free Energy Transfer and pattern conversion;
Two single mode ridge waveguides, it is connected with an end of two mode converters respectively;
An optics bundling device, it is connected with the other end of two single mode ridge waveguides respectively;
A wherein said vertical coupled grating, two mode converters, two single mode ridge waveguides and an optics bundling device all are produced on the substrate.
By top analysis as can be known, our this scheme is feasible, and this device can be finished coupling function, realizes simultaneously the light isolation, and the protection optical active component is expected to obtain to use in sheet glazing interconnection/optical communication network.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing the present invention is described in more detail, wherein:
Fig. 1 is 3 D stereo schematic diagram of the present invention.
Fig. 2 is vertical coupled grating 11 coupling schematic cross-sections among the present invention.
Fig. 3 is vertical coupled grating 11 specific embodiment coupling efficiency curves among the present invention.
Fig. 4 is optoisolator specific embodiment simulation curve of the present invention.
Specific embodiments
Because the present invention is based on the silica-based optoisolator of SOI backing material design, for different oxygen buried layer thickness and top layer silicon thickness, also different for reaching the corresponding optimal design of functional requirement, therefore in order conveniently to narrate, backing material of the present invention is defaulted as the implementation parameter, be that oxygen buried layer thickness is 2 μ m, top layer silicon thickness is 220nm.
Fig. 1 is the specific embodiments of the invention schematic three dimensional views, consults shown in Figure 1ly, the invention provides a kind of SOI base optoisolator based on symmetrical vertical raster coupled structure, comprising:
A vertical coupled grating 11, described vertical coupled grating 11 are symmetrical vertical coupled grating 1;
Two mode converters 12 are produced in the both sides of vertical coupled grating 11, as being connected of the wide waveguide in vertical coupled grating 11 places and single mode ridge waveguide 13, realize approximate loss-free Energy Transfer and pattern conversion;
Two single mode ridge waveguides 13, it is connected with an end of two mode converters 12 respectively;
An optics bundling device (3dB beam splitter) 14, it is connected with the other end of two single mode ridge waveguides 13 respectively, described optics bundling device (3dB beam splitter) the 14th, Y branch or MMI coupling mechanism;
Wherein said one vertical coupled grating 11, two mode converters 12, two single mode ridge waveguides 13 and an optics bundling device (3dB beam splitter) 14 all are produced on the substrate, and described substrate is the SOI substrate.
Described vertical coupled grating 11 is as interface or the coupling mechanism of SOI base optoisolator and optical fiber, realize fully vertical coupled, when single-mode fiber 21 (consulting Fig. 2) is in symmetrical vertical coupled grating 11 center, the two-beam that the luminous energy that is coupled into is divided into full symmetric enters respectively in two mode converters 12 of symmetrical vertical coupled grating 11 both sides, enter single mode ridge waveguide 13 through the pattern conversion, along opposite direction single mode propagation, thereby this structure possesses the function of the 3-dB beam splitter of coupling mechanism and input end.When the reflected light in the waveguide is propagated in the other direction along light path, enter mode converter 12 from the reflected light of single mode ridge waveguide 13 incidents, conversion enters vertical coupled grating 11 through pattern.
Photosynthetic for a branch of in two single mode ridge waveguides 13 that described optics bundling device (3dB beam splitter) 14 is told vertical coupled grating 11, improve coupling efficiency, when the reflected light in the simultaneously waveguide is propagated in the other direction along light path, this optics bundling device (3dB beam splitter) 14 is divided into two-way with reflected light, propagate to mode converter 12 through two single mode ridge waveguides 13 respectively, enter at last vertical coupled grating 11.
When the reflected light in the waveguide was propagated in the other direction along light path, reflected light was propagated to vertical coupled grating 11 through optics bundling device (3dB beam splitter) 14, single mode ridge waveguide 13 and mode converter 12, interfered mutually at vertical coupled grating 11 places to disappear.Simultaneously, for the light of vertical coupled grating 11 operation wavelengths, grating satisfies Bragg condition, can realize the strong reflection to the light of this wavelength in the waveguide.Under the effect of above-mentioned two kinds of mechanism, the reflected light on this device prevention chip in the silicon waveguide enters optical fiber, has realized the effect of light isolation.
Fig. 2 is vertical coupled grating 11 coupling schematic diagram, and vertical coupled grating 11 tops are single-mode fiber 21.Single-mode fiber 21 and vertical coupled grating 11 are vertical and be positioned at its center.General common single-mode fiber sandwich layer diameter is 8-9 μ m, and going out emission mode is gaussian model, and the mould spot diameter is about 10.4 μ m, and therefore, for guaranteeing coupling efficiency, grating length should be slightly large, and in our embodiment, vertical coupled grating 11 length are 12 μ m.From schematic diagram, can find out, when single-mode fiber 21 and vertical coupled grating 11 are concentric, energy Pin from from single-mode fiber 21 to vertical coupled grating 11 incidents is after being coupled into chip, and the energy P1 that enters left side single mode ridge waveguide 13 equates with the energy P2 that enters right side single mode ridge waveguide 13.At this moment, vertical coupled grating 11 namely is divided into the energy that is coupled into as the energy beam splitter of input end again the light of two bundle TE polarizations of full symmetric as coupling mechanism.In order to obtain the maximal efficiency coupling, following design parameter: duct height D, the etching depth of grating d, grating periods lambda, gratings strips width W, grating periodicity N etc. are arranged.
Fig. 3 is vertical coupled grating 11 specific embodiment coupling efficiency simulation curves among the present invention.The curve transverse axis is wavelength, and the longitudinal axis is that single-mode fiber 21 output powers are to be coupled into the light transmission power in the both sides single mode ridge waveguide 13 at 1 o'clock, that is to say the luminous power that is coupled into both sides single mode ridge waveguide 13 and the normalized value of single-mode fiber 21 emergent powers.Fig. 3 (a) solid line and dotted line represent respectively the coupling efficiency that enters right side single mode ridge waveguide 13 and left side single mode ridge waveguide 13, because the both sides optical propagation direction is opposite, corresponding optical transmission has positive and negative dividing.Fig. 3 (b) is in the situation of differential loss of disregarding optics bundling device (3dB beam splitter) 14, closes the coupling efficiency of the vertical coupled grating 11 behind the bundle.Can find out, the spectrum that enters both sides from vertical coupled grating 11 is identical, and the coupling efficiency behind the ECDC bundle is also very considerable.In addition, we can see that also vertical coupled grating 11 presents flat wider filtering characteristic.
Fig. 4 is optoisolator specific embodiment simulation curve of the present invention.The curve transverse axis is wavelength, and the longitudinal axis is the luminous power normalized value.Solid line is catoptrical transmission curve, and dotted line is in the situation of differential loss of disregarding optics bundling device (3dB beam splitter) 14, closes the coupling efficiency of the vertical coupled grating 11 behind the bundle.Can find out; operating wave strong point at vertical coupled grating 11; the effect because the reflex of grating and two beam waveguide internal reflection interferences of light disappear mutually; catoptrical transmission is minimum; level off to zero, illustrate that this present invention can stop the waveguide reflects light to enter single-mode fiber 21 by vertical coupled grating 11, the protection optical active component; when finishing on the outer light source of sheet and the sheet silicon waveguide-coupled, can realize the function that light is isolated.
Technique Integrated Solution and the manufacturing process of this invention are described below in conjunction with specific embodiment.
1. 60nm SiO grows
2As hard mask plate.
2. the etching ridge waveguide carves ridge regional peace plate zone.Comprise the residing multimode waveguide of grating, mode converter 12, single mode ridge waveguide 13, optics bundling device (3dB beam splitter) 14.
3. the vertical coupled grating 11 of etching (if grating is consistent with dull and stereotyped etching depth, then 1,2 liang of step can be combined into a step).
4. 1 μ m SiO grows
2Passivation layer.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect have been carried out more detailed specific description; institute is understood that; above-described only is specific embodiments of the invention; be not limited to the present invention; all in spirit of the present invention, thought and principle scope, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. one kind based on the SOI of symmetrical vertical raster coupled structure base optoisolator, comprising:
A vertical coupled grating;
Two mode converters are produced in the both sides of vertical coupled grating, realize approximate loss-free Energy Transfer and pattern conversion;
Two single mode ridge waveguides, it is connected with an end of two mode converters respectively;
An optics bundling device, it is connected with the other end of two single mode ridge waveguides respectively;
A wherein said vertical coupled grating, two mode converters, two single mode ridge waveguides and an optics bundling device all are produced on the substrate.
2. the SOI base optoisolator based on symmetrical vertical raster coupled structure according to claim 1, wherein said vertical coupled grating be the vertical coupled grating of symmetry.
3. the SOI base optoisolator based on symmetrical vertical raster coupled structure according to claim 1, wherein the optics bundling device is the 3dB beam splitter, it is Y branch or MMI coupling mechanism.
4. the SOI base optoisolator based on symmetrical vertical raster coupled structure according to claim 1, wherein said substrate is the SOI substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104084492A CN102928925A (en) | 2012-10-24 | 2012-10-24 | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104084492A CN102928925A (en) | 2012-10-24 | 2012-10-24 | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102928925A true CN102928925A (en) | 2013-02-13 |
Family
ID=47643763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104084492A Pending CN102928925A (en) | 2012-10-24 | 2012-10-24 | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102928925A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104317004A (en) * | 2014-11-12 | 2015-01-28 | 天津工业大学 | Polarization diversity perpendicular coupling fiber interface and four-way power beam splitter |
| CN104459881A (en) * | 2014-12-31 | 2015-03-25 | 武汉邮电科学研究院 | Wavelength division multiplexing type silicon substrate optical receiving chip insensitive to polarization |
| CN106950659A (en) * | 2017-05-11 | 2017-07-14 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN107861190A (en) * | 2017-11-28 | 2018-03-30 | 中国计量大学 | Follower is polarized based on local period gender gap road structure Terahertz |
| CN107884876A (en) * | 2017-12-23 | 2018-04-06 | 长安大学 | A kind of polarization state detection chip based on Waveguide grating coupler |
| CN110491967A (en) * | 2019-09-02 | 2019-11-22 | 电子科技大学 | Reverse-biased type silicon shines SOI photoisolator, its integrated circuit and production method |
| CN110955042A (en) * | 2019-11-08 | 2020-04-03 | 浙江大学 | Symmetrical light beam scanning system and working method thereof |
| CN110989102A (en) * | 2019-12-10 | 2020-04-10 | 天津工业大学 | Silicon-based WDM optical transmission device based on VCSEL array hybrid integration and optical fiber vertical packaging |
| CN114200582A (en) * | 2021-12-23 | 2022-03-18 | 电子科技大学 | SOI-based bidirectional light-collecting vertical grating coupler and working method |
| CN115166901A (en) * | 2022-07-26 | 2022-10-11 | 陕西帆瑞威光电科技有限公司 | Micro-nano waveguide isolator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6535656B1 (en) * | 2001-10-17 | 2003-03-18 | Corning Incorporated | Planar-type polarization independent optical isolator |
| CN101261372A (en) * | 2008-04-16 | 2008-09-10 | 浙江大学 | Polarization irrelevant magneto- optic waveguide light isolator |
| CN102540505A (en) * | 2012-01-13 | 2012-07-04 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
-
2012
- 2012-10-24 CN CN2012104084492A patent/CN102928925A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6535656B1 (en) * | 2001-10-17 | 2003-03-18 | Corning Incorporated | Planar-type polarization independent optical isolator |
| CN101261372A (en) * | 2008-04-16 | 2008-09-10 | 浙江大学 | Polarization irrelevant magneto- optic waveguide light isolator |
| CN102540505A (en) * | 2012-01-13 | 2012-07-04 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104317004A (en) * | 2014-11-12 | 2015-01-28 | 天津工业大学 | Polarization diversity perpendicular coupling fiber interface and four-way power beam splitter |
| CN104459881A (en) * | 2014-12-31 | 2015-03-25 | 武汉邮电科学研究院 | Wavelength division multiplexing type silicon substrate optical receiving chip insensitive to polarization |
| CN104459881B (en) * | 2014-12-31 | 2017-04-12 | 武汉邮电科学研究院 | Wavelength division multiplexing type silicon substrate optical receiving chip insensitive to polarization |
| CN106950659A (en) * | 2017-05-11 | 2017-07-14 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN107861190A (en) * | 2017-11-28 | 2018-03-30 | 中国计量大学 | Follower is polarized based on local period gender gap road structure Terahertz |
| CN107884876B (en) * | 2017-12-23 | 2023-09-08 | 长安大学 | Light polarization state detection chip based on waveguide grating coupler |
| CN107884876A (en) * | 2017-12-23 | 2018-04-06 | 长安大学 | A kind of polarization state detection chip based on Waveguide grating coupler |
| CN110491967A (en) * | 2019-09-02 | 2019-11-22 | 电子科技大学 | Reverse-biased type silicon shines SOI photoisolator, its integrated circuit and production method |
| CN110491967B (en) * | 2019-09-02 | 2021-03-02 | 电子科技大学 | Reverse bias type silicon light-emitting SOI photoelectric isolator, integrated circuit thereof and manufacturing method |
| CN110955042B (en) * | 2019-11-08 | 2021-04-06 | 浙江大学 | Symmetrical light beam scanning system and working method thereof |
| CN110955042A (en) * | 2019-11-08 | 2020-04-03 | 浙江大学 | Symmetrical light beam scanning system and working method thereof |
| CN110989102A (en) * | 2019-12-10 | 2020-04-10 | 天津工业大学 | Silicon-based WDM optical transmission device based on VCSEL array hybrid integration and optical fiber vertical packaging |
| CN114200582A (en) * | 2021-12-23 | 2022-03-18 | 电子科技大学 | SOI-based bidirectional light-collecting vertical grating coupler and working method |
| CN115166901A (en) * | 2022-07-26 | 2022-10-11 | 陕西帆瑞威光电科技有限公司 | Micro-nano waveguide isolator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102928925A (en) | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure | |
| CN102540505B (en) | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling | |
| CN104301041B (en) | Silicon substrate integrated coherent light transmitter chip and transmitter | |
| US9335472B2 (en) | Planar optical waveguide device and DP-QPSK modulator | |
| CN105116491B (en) | A kind of silicon substrate groove waveguides integrated-type optical power distributor | |
| WO2015096070A1 (en) | Waveguide polarization splitter and polarization rotator | |
| Yao et al. | Grating-coupler based low-loss optical interlayer coupling | |
| CN109387956B (en) | Graphene electro-optic modulator based on slit waveguide | |
| CN102565955A (en) | Electric tunable grating coupler | |
| CN104317070B (en) | Silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface | |
| CN113540063B (en) | Silicon optical integrated chip compatible with germanium-silicon detector and thin film lithium niobate modulator | |
| CN103048735B (en) | Surface plasma wave demultiplexer based on destructive interference | |
| CN103513333A (en) | Blended crossing device for silicon-based nanowire | |
| CN103336379B (en) | A kind of integrated photon crystal MZI modulator applied to 60GHz ROF systems | |
| CN102736181A (en) | Integrated optical waveguide polarization beam splitter for mode multiplexing system | |
| CN105408791B (en) | Single-mode vertical cavity surface emitting lasers transceiver module and lightray propagation method | |
| CN102540626A (en) | Optical waveguide micro-ring resonant cavity-based all-optical logic gate and logic operation method thereof | |
| CN108873395B (en) | Mode conversion-based graphene polarization-independent light modulator | |
| CN104317071B (en) | Graphene-based planar optical waveguide polarization beam splitter | |
| Fujikata et al. | Waveguide-integrated Si nano-photodiode with surface-plasmon antenna and its application to on-chip optical clock distribution | |
| Wei et al. | TDFA-band silicon optical variable attenuator | |
| Vlasov | Silicon integrated nanophotonics: road from scientific explorations to practical applications | |
| CN105652371B (en) | Polarization beam apparatus | |
| CN105634466B (en) | A kind of electric light logic gate of SOI based structures | |
| CN107315223B (en) | Collect the optical interconnection device of Polarization filter and interlayer equalization coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130213 |