CN114200582A - SOI-based bidirectional light-collecting vertical grating coupler and working method - Google Patents
SOI-based bidirectional light-collecting vertical grating coupler and working method Download PDFInfo
- Publication number
- CN114200582A CN114200582A CN202111595073.6A CN202111595073A CN114200582A CN 114200582 A CN114200582 A CN 114200582A CN 202111595073 A CN202111595073 A CN 202111595073A CN 114200582 A CN114200582 A CN 114200582A
- Authority
- CN
- China
- Prior art keywords
- grating
- spot size
- coupler
- silicon
- size converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a vertical coupling SOI-based bidirectional light collection vertical grating coupler compatible with a traditional CMOS (complementary metal oxide semiconductor) process and a working method thereof, belonging to the field of integrated photoelectron and semiconductor. The grating coupler includes: grating, spot size converter, waveguide, multimode interference coupler. According to the invention, the optical fiber can be perpendicular to the grating surface, so that the packaging difficulty can be greatly reduced, and the yield and reliability of the final device can be improved; in addition, the invention has a structure for collecting light in two directions, and can simultaneously collect light transmitted in two directions in the grating coupling process, thereby improving the coupling efficiency of the light.
Description
Technical Field
The invention belongs to the technical field of silicon-based photoelectron, and particularly relates to an all-silicon vertical coupling grating structure which is suitable for 1550 nanometer light, uses a binary blazed grating and collects light in a two-way manner.
Background
The optical signal is an important information carrier in the field of modern communication because of its strong anti-interference capability and low transmission loss. Typically, optical signals are transmitted over long distances in optical fibers, but processing the optical signals requires converting the optical signals into electrical signals. The integrated silicon-based photoelectronic technology is that an optical processor is manufactured on a silicon chip by an integration method, and can be integrated with a circuit at the same time, so that the volume of the device can be reduced, and the system performance can be improved. Therefore, a grating coupling device is required to introduce an optical signal in an optical fiber onto a chip or to transmit an optical signal from the chip to the optical fiber.
The SOI material is called silicon-on-insulator, and comprises the following components from the top layer to the bottom: 1. top layer silicon; 2. buried oxide layer, 3, substrate silicon. First, silicon materials and silicon dioxide materials have extremely low optical absorption at 1550 nm, and are suitable as materials for transmitting optical signals. And secondly, the photoelectronic device on the silicon material can be directly integrated with an integrated circuit, so that the integration level is improved, and the area of a chip is reduced. Finally, the refractive index of silicon is much larger than that of silicon dioxide, and the larger refractive index difference can enhance the light-binding capability of the waveguide in the grating coupler and reduce the loss of light transmission.
The grating structure used by the grating coupler is a sub-wavelength grating, and is characterized in that the period of the grating is far less than the wavelength of light. Therefore, when light is incident on such a grating, it can be considered that the light is approximately incident on a thin film having an average refractive index distribution, where the period of the grating is Λ and the refractive index is n1Has a material width of t1Refractive index of n2Has a material width of t2Then its average refractive index is
The thickness and refractive index of this film are therefore optimized for reduced reflection and transmission. Raising gratingThe coupling efficiency of the coupler. The binary blazed grating is divided into a plurality of parts in one period, and each part is manufactured with gratings with different duty ratios to achieve the effect that the refractive index is not uniformly distributed in one grating period to approximately achieve an inclined surface, so that light can be coupled into the waveguide when the light is vertically incident.
Conventional grating couplers require that the optical fiber be at an angle to the normal of the plane of incidence. The specific process firstly needs to polish the end face of the optical fiber to be parallel to the surface of the grating, then the position of an incident light spot is changed due to the difference of the heights of the optical fiber when the optical fiber is fixed, so that the fixed height needs to be controlled, and then the expected incident angle needs to be ensured. Therefore, the traditional packaging process is difficult and has low yield; the grating coupler capable of being vertically coupled and packaged only needs to vertically align the optical fiber above the device and then fix the optical fiber, the position of an incident point is hardly influenced by the height of the optical fiber, and in addition, the polished surface is perpendicular to the incident optical fiber, so that the polished surface can be ensured to be parallel to the optical waveguide plane as long as the vertical incidence of the optical fiber is ensured. The difficulty of the packaging process can be greatly reduced.
A big problem of the vertical grating coupler is that it is difficult to control the propagation direction of light in the waveguide, and since the grating coupler needs to be fabricated with a waveguide structure in both directions, light is simultaneously propagated in both directions after entering the grating coupler. Thus, the coupling efficiency can be improved if one structure can be designed to collect light energy in two directions simultaneously.
Because the vertical incidence can bring the advantage of reducing the packaging difficulty, how to design a grating coupler capable of vertically coupling and bidirectionally collecting light based on the existing mature CMOS process becomes a technical problem to be solved urgently.
Disclosure of Invention
The invention aims to provide a novel vertical coupling grating device structure capable of bidirectionally collecting light, aiming at the problems of high packaging difficulty, poor packaging reliability and difficulty in large-scale operation of a common grating coupling device in packaging.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an SOI-based bi-directional collection optical vertical grating coupler comprising: the optical fiber grating comprises a bottommost substrate silicon 6 and a buried oxide layer 7 on the substrate silicon 6, wherein the buried oxide layer 7 is provided with a grating 1, a first spot size converter 2, a second spot size converter 3, a first silicon waveguide 51, a second silicon waveguide 52 and a multimode interference coupler 4, the upper end of the grating 1 is connected with the input end of the first spot size converter 2, the lower end of the grating 1 is connected with the input end of the second spot size converter 3, the output end of the first spot size converter 2 is connected with the input end of the first silicon waveguide 51, the output end of the second spot size converter 3 is connected with the input end of the second silicon waveguide 52, and the output ends of the first silicon waveguide 51 and the second silicon waveguide 52 are respectively connected with the input end of the multimode interference coupler 4; the output end of the multimode interference coupler 4 outputs light; the first silicon waveguide 51 and the second silicon waveguide 52 have the same shape and size; the waveguide width of the first silicon waveguide 51 and the second silicon waveguide 52 is 0.45-0.55 microns, and the first spot size converter 2 and the second spot size converter 3 are in a trapezoid structure;
the grating 1 is a binary blazed grating, the binary blazed grating refers to a grating formed by a plurality of silicon strips with different widths in one period, and the grating 1 is located right below the optical fiber 10.
Preferably, the grating 1, the first speckle converter 2, the second speckle converter 3, the first silicon waveguide 51, the second silicon waveguide 52 and the multimode interference coupler 4 are all formed by etching surface silicon.
Preferably, the waveguide width of the first silicon waveguide 51 and the second silicon waveguide 52 is 0.5 μm.
Preferably, the first spot size converter 2 and the second spot size converter 3 are both of a trapezoidal structure, the upper base width of the trapezoid is 0.5 micrometers, the lower base width is 15 micrometers, the height is 300 micrometers, and the thickness on the Si surface is 220 nanometers.
Preferably, the grating 1 is 15 microns and more wide and/or the grating coupler is developed using CMOS processes.
As a preferred mode, the grating 1 is a binary blazed grating with a period of 545 nm, each period is divided into four parts of Λ 1, Λ 2, Λ 3 and Λ 4, wherein the length of the portion of Λ 3 is 137 nm, the lengths of the rest three parts are 136 nm, the lengths occupied by the silicon materials in the portions from Λ 1 to Λ 4 are respectively 10 nm, 40 nm, 81 nm and 136 nm, and the silicon materials are distributed in the portions from Λ 1 to Λ 4 in the middle; the total thickness of the grating structure is 510 nanometers, the etching depth is 350 nanometers, and 160 nanometers are reserved; 20 periods were made, with the grating structure having an overall length of 10.9 microns and a width of 15 microns.
Preferably, the first silicon waveguide 51 and the second silicon waveguide 52 are stripe waveguides 220 nm high, and the curvature radius of all the curved portions of the stripe waveguides is 20 μm.
Preferably, the width W of the multimode interference coupler 4 is 3.6 micrometers, the length L is 11.3 micrometers, the height is 220 nanometers, and the sizes of the three isosceles trapezoids are kept consistent; the isosceles axis of symmetry of the isosceles trapezoid at the output end of the multimode interference coupler 4 is opposite to the center of the multimode interference coupler 4, the axis of symmetry of the two isosceles trapezoids at the input end deviates 920 nm from the center of the multimode interference coupler, the top width W0 of each isosceles trapezoid structure is 0.5 micron, the bottom width W1 is 1.2 microns, and the length L0 is 20 microns.
Preferably, the substrate material is an SOI material with the top layer silicon thickness of 510 nanometers and the buried oxide layer thickness of 2.5 micrometers.
The invention also provides a working method of the SOI-based bidirectional light-collecting vertical grating coupler, wherein an incident optical fiber is arranged right above the grating, the optical fiber 10 is vertical to the grating 1, the optical fiber 10 is arranged 1 to 5 microns above the grating 1, and the incident central point is aligned with the central point of the grating; the 1550 nanometer light enters the grating from the optical fiber vertical incidence, the light is transmitted into the first spot size converter 2 and the second spot size converter 3 from the two sides of the grating, the conversion between the light mode in the grating and the light mode in the waveguide is realized by utilizing the first spot size converter 2 and the second spot size converter 3, then the light is introduced into two ports of the multimode interference coupler 4 through the first silicon waveguide 51 and the second silicon waveguide 52 with the same length and shape, and finally the light is output from the output end of the multimode interference coupler.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention can use the vertical incidence optical fiber for packaging, simplifies the packaging process, improves the yield and saves the packaging cost. The traditional grating coupler needs an oblique incidence optical fiber, and the incidence angle is a fixed value, which causes great difficulty in packaging.
2. The grating structure can be compatible with a CMOS (complementary metal oxide semiconductor) process, and has the advantages of lower threshold, mature production process and high yield compared with the traditional vertical coupling grating.
Drawings
FIG. 1 is a schematic top view of an SOI-based vertical grating coupler according to the present invention;
FIG. 2 is a longitudinal cross-sectional view of the grating 1 shown in FIG. 1;
FIG. 3 is a schematic diagram of a single period of the grating of FIG. 1;
FIG. 4 is a dimensional diagram of the multimode interference coupler of FIG. 1;
FIG. 5 is a graph showing simulation results of coupling efficiency at 1550 nm and a band around the same according to an embodiment of the present invention.
In the figure, 1-grating, 2-first spot size converter, 3-second spot size converter, 4-multimode interference coupler, 5-silicon waveguide, 51-first silicon waveguide, 52-second silicon waveguide, 6-substrate silicon, 7-buried oxide layer, 10-optical fiber.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As shown in fig. 1 and fig. 2, the present embodiment provides an SOI-based bidirectional light-collecting vertical grating coupler, including: the optical fiber grating comprises a bottommost substrate silicon 6 and a buried oxide layer 7 on the substrate silicon 6, wherein the buried oxide layer 7 is provided with a grating 1, a first spot size converter 2, a second spot size converter 3, a first silicon waveguide 51, a second silicon waveguide 52 and a multimode interference coupler 4, the upper end of the grating 1 is connected with the input end of the first spot size converter 2, the lower end of the grating 1 is connected with the input end of the second spot size converter 3, the output end of the first spot size converter 2 is connected with the input end of the first silicon waveguide 51, the output end of the second spot size converter 3 is connected with the input end of the second silicon waveguide 52, and the output ends of the first silicon waveguide 51 and the second silicon waveguide 52 are respectively connected with the input end of the multimode interference coupler 4; the output end of the multimode interference coupler 4 outputs light; the first silicon waveguide 51 and the second silicon waveguide 52 have the same shape and size; the waveguide width of the first silicon waveguide 51 and the second silicon waveguide 52 is 0.45-0.55 microns, and the first spot size converter 2 and the second spot size converter 3 are in a trapezoid structure;
the grating 1 is a binary blazed grating, the binary blazed grating refers to a grating formed by a plurality of silicon strips with different widths in one period, and the grating 1 is located right below the optical fiber 10.
The grating 1, the first spot size converter 2, the second spot size converter 3, the first silicon waveguide 51, the second silicon waveguide 52 and the multimode interference coupler 4 are all formed by etching surface silicon.
Preferably, the waveguide width of the first silicon waveguide 51 and the second silicon waveguide 52 is 0.5 μm.
The first spot size converter 2 and the second spot size converter 3 are both in a same trapezoid structure, the upper bottom width of the trapezoid is 0.5 micrometer, the lower bottom width is 15 micrometers, the height is 300 micrometers, and the thickness of the Si surface is 220 nanometers.
The grating 1 is 15 microns and more wide and/or the grating coupler is developed using CMOS processes. The vertical coupling grating which can enable the optical fiber to vertically enter is realized on the premise of being compatible with the traditional CMOS process. On one hand, the complexity and difficulty of packaging can be reduced; on the other hand, the mature process is used for production, so that the yield of the product can be improved.
As shown in fig. 3, the grating 1 is a binary blazed grating with a period of 545 nm, each period is divided into four parts Λ 1, Λ 2, Λ 3 and Λ 4, wherein the length of the portion Λ 3 is 137 nm, the lengths of the rest three parts are 136 nm, the lengths occupied by the silicon materials in the portions from Λ 1 to Λ 4 are respectively 10 nm, 40 nm, 81 nm and 136 nm, and the silicon materials are distributed in the portions from Λ 1 to Λ 4 in the middle; the total thickness of the grating structure is 510 nanometers, the etching depth is 350 nanometers, and 160 nanometers are reserved; 20 periods were made, with the grating structure having an overall length of 10.9 microns and a width of 15 microns.
The first silicon waveguide 51 and the second silicon waveguide 52 are 220 nm high stripe waveguides, and the radius of curvature of all the curved portions of the stripe waveguides is 20 μm.
As shown in fig. 4, the width W of the multimode interference coupler 4 is 3.6 micrometers, the length L is 11.3 micrometers, the height is 220 nanometers, and the sizes of the three isosceles trapezoids are consistent; the isosceles axis of symmetry of the isosceles trapezoid at the output end of the multimode interference coupler 4 is opposite to the center of the multimode interference coupler 4, the axis of symmetry of the two isosceles trapezoids at the input end deviates 920 nm from the center of the multimode interference coupler, the top width W0 of each isosceles trapezoid structure is 0.5 micron, the bottom width W1 is 1.2 microns, and the length L0 is 20 microns.
The substrate material is SOI material with the top layer silicon thickness of 510 nanometers and the buried oxide layer thickness of 2.5 micrometers.
The embodiment also provides a working method of the SOI-based bidirectional light-collecting vertical grating coupler, wherein an incident optical fiber is placed right above the grating, the optical fiber 10 is perpendicular to the grating 1, the optical fiber 10 is placed 1 to 5 microns above the grating 1, and an incident central point is aligned with a middle point of the grating; the 1550 nanometer light enters the grating from the optical fiber vertical incidence, the light is transmitted into the first spot size converter 2 and the second spot size converter 3 from the two sides of the grating, the conversion between the light mode in the grating and the light mode in the waveguide is realized by utilizing the first spot size converter 2 and the second spot size converter 3, then the light is introduced into two ports of the multimode interference coupler 4 through the first silicon waveguide 51 and the second silicon waveguide 52 with the same length and shape, and finally the light is output from the output end of the multimode interference coupler.
The invention utilizes the spot conversion action of the first spot size converter 2 and the second spot size converter 3 and the light transmission action of the first silicon waveguide 51 and the second silicon waveguide 52, and the superposition action of the multimode interference coupler for two beams of light with the same phase, and couples the light incident from the optical fiber 10 into one waveguide for output. The function of coupling light in a vertically coupled optical fiber into a waveguide is achieved.
Due to the large difference between the width of the grating and the width of the waveguide, if the waveguide and the grating are directly connected, a very large mode mismatch occurs, so that the first and second spot size converters 2 and 3 are used to realize the conversion between the light mode in the grating and the light mode in the waveguide. Then, the two sections of the first silicon waveguide 51 and the second silicon waveguide 52 with the same length and shape are introduced into two ports of the multimode interference coupler 4, and finally, the two sections of the first silicon waveguide and the second silicon waveguide are output from the output end of the multimode interference coupler.
As shown in fig. 2, the optical fiber 10 is perpendicular to the grating 1, and the optical fiber 10 is specifically placed 1 to 5 microns above the grating 1, and the incident center point should be aligned with the middle point of the grating. In the range of 1 to 5 microns, this height has little effect on the coupling efficiency.
As shown in fig. 2, the silicon waveguide 5 has a thickness of 220 nm. This is the result of the top silicon etch through 510 nm. The SOI buried oxide layer 7 has a thickness of 2.5 microns to reduce light leakage into the substrate silicon.
As shown in fig. 2, the heights of the first spot size converter 2 and the second spot size converter 3 are consistent with the first silicon waveguide 51 and the second silicon waveguide 52.
As shown in fig. 5, the simulation results of the coupling efficiency at 1550 nm and the band around the current size are shown. The simulated coupling efficiency is around 44%.
Further, the mode entering the grating region is ensured to be a fundamental mode as much as possible.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An SOI-based bi-directional collection optical vertical grating coupler, comprising: the optical fiber grating comprises bottommost substrate silicon (6) and a buried oxide layer (7) on the substrate silicon (6), wherein a grating (1), a first spot size converter (2), a second spot size converter (3), a first silicon waveguide (51), a second silicon waveguide (52) and a multimode interference coupler (4) are arranged on the buried oxide layer (7), the upper end of the grating (1) is connected with the input end of the first spot size converter (2), the lower end of the grating (1) is connected with the input end of the second spot size converter (3), the output end of the first spot size converter (2) is connected with the input end of the first silicon waveguide (51), the output end of the second spot size converter (3) is connected with the input end of the second silicon waveguide (52), and the output ends of the first silicon waveguide (51) and the second silicon waveguide (52) are respectively connected with the input end of the multimode interference coupler (4); the output end of the multimode interference coupler (4) outputs light; the first silicon waveguide (51) and the second silicon waveguide (52) have the same shape and size; the waveguide width of the first silicon waveguide (51) and the second silicon waveguide (52) is 0.45-0.55 microns, and the first spot size converter (2) and the second spot size converter (3) are of a trapezoidal structure;
the grating (1) is a binary blazed grating, the binary blazed grating refers to a grating formed by a plurality of silicon strips with different widths in one period, and the grating (1) is located right below the optical fiber (10).
2. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the grating (1), the first spot size converter (2), the second spot size converter (3), the first silicon waveguide (51), the second silicon waveguide (52) and the multimode interference coupler (4) are all formed by etching surface silicon.
3. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the waveguide width of the first silicon waveguide (51) and the second silicon waveguide (52) is 0.5 μm.
4. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the first spot size converter (2) and the second spot size converter (3) are both in the same trapezoid structure, the upper bottom width of the trapezoid is 0.5 micrometer, the lower bottom width is 15 micrometer, the height is 300 micrometer, and the thickness on the Si surface is 220 nanometer.
5. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the grating (1) has a width of 15 microns and above and/or the grating coupler is developed using CMOS processes.
6. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the grating (1) is a binary blazed grating with a period of 545 nanometers, each period is divided into four parts of Λ 1, Λ 2, Λ 3 and Λ 4, wherein the length of the portion of Λ 3 is 137 nanometers, the lengths of the rest three portions are 136 nanometers, the lengths occupied by silicon materials in the portions from Λ 1 to Λ 4 are respectively 10 nanometers, 40 nanometers, 81 nanometers and 136 nanometers, and the silicon materials are distributed in the portions from Λ 1 to Λ 4 in the middle; the total thickness of the grating structure is 510 nanometers, the etching depth is 350 nanometers, and 160 nanometers are reserved; 20 periods were made, with the grating structure having an overall length of 10.9 microns and a width of 15 microns.
7. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the first silicon waveguide (51) and the second silicon waveguide (52) are strip waveguides 220 nm high, and the curvature radius of all the bent parts of the strip waveguides is 20 microns.
8. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the width W of the multimode interference coupler (4) is 3.6 micrometers, the length L of the multimode interference coupler is 11.3 micrometers, the height of the multimode interference coupler is 220 nanometers, and the sizes of the three isosceles trapezoids are kept consistent; the isosceles axis of symmetry of the isosceles trapezoid at the output end of the multimode interference coupler (4) is opposite to the center of the multimode interference coupler (4), the axis of symmetry of the two isosceles trapezoids at the input end deviates 920 nm from the center of the multimode interference coupler, the top width W0 of each isosceles trapezoid structure is 0.5 micron, the bottom width W1 is 1.2 microns, and the length L0 is 20 microns.
9. The SOI-based bi-directional collection optical vertical grating coupler of claim 1, wherein: the substrate material is SOI material with the top layer silicon thickness of 510 nanometers and the buried oxide layer thickness of 2.5 micrometers.
10. The method of operating an SOI-based bi-directional collection optical vertical grating coupler as defined in any one of claims 1 to 9 wherein: an incident optical fiber is placed right above the grating, the optical fiber (10) is vertical to the grating (1), the optical fiber (10) is placed 1-5 microns above the grating (1), and an incident central point is aligned with the middle point of the grating; the 1550 nanometer light enters the grating from the optical fiber in a vertical incidence mode, the light is transmitted to the two sides of the grating into a first spot size converter (2) and a second spot size converter (3), the first spot size converter (2) and the second spot size converter (3) are utilized to realize conversion between a light mode in the grating and a light mode in the waveguide, then the light is introduced into two ports of a multimode interference coupler (4) through a first silicon waveguide (51) and a second silicon waveguide (52) which are two sections of the same length and shape, and finally the light is output from an output end of the multimode interference coupler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111595073.6A CN114200582A (en) | 2021-12-23 | 2021-12-23 | SOI-based bidirectional light-collecting vertical grating coupler and working method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111595073.6A CN114200582A (en) | 2021-12-23 | 2021-12-23 | SOI-based bidirectional light-collecting vertical grating coupler and working method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114200582A true CN114200582A (en) | 2022-03-18 |
Family
ID=80656434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111595073.6A Pending CN114200582A (en) | 2021-12-23 | 2021-12-23 | SOI-based bidirectional light-collecting vertical grating coupler and working method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114200582A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556356A (en) * | 2009-04-17 | 2009-10-14 | 北京大学 | Grating coupler and application thereof in polarization and wave length beam splitting |
| CN102928925A (en) * | 2012-10-24 | 2013-02-13 | 中国科学院半导体研究所 | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure |
| WO2017147773A1 (en) * | 2016-03-01 | 2017-09-08 | 华为技术有限公司 | Optocoupler and light processing method |
-
2021
- 2021-12-23 CN CN202111595073.6A patent/CN114200582A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556356A (en) * | 2009-04-17 | 2009-10-14 | 北京大学 | Grating coupler and application thereof in polarization and wave length beam splitting |
| CN102928925A (en) * | 2012-10-24 | 2013-02-13 | 中国科学院半导体研究所 | Silicon on insulator (SOI)-based opto-isolator based on symmetrical vertical grating coupling structure |
| WO2017147773A1 (en) * | 2016-03-01 | 2017-09-08 | 华为技术有限公司 | Optocoupler and light processing method |
Non-Patent Citations (2)
| Title |
|---|
| JOHN COVEY AND RAY T. CHEN: "Efficient perfectly vertical fiber-to-chip grating coupler for silicon horizontal multiple slot waveguides", 《OPTICS EXPRESS》 * |
| ZANYUN ZHANG, BEIJU HUANG.ET.AL: "Monolithic Integrated Silicon Photonic Interconnect With Perfectly Vertical Coupling Optical Interface", 《IEEE PHOTONICS JOURNAL》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9435946B2 (en) | Interlayer light wave coupling device | |
| US7251406B2 (en) | Optical waveguide termination with vertical and horizontal mode shaping | |
| CN113359234B (en) | Module spot converter and silicon light integrated chip | |
| TW200426416A (en) | Embedded mode converter | |
| CA2425600A1 (en) | Optical waveguides with trench structures | |
| CN114384632B (en) | Array waveguide grating and waveguide type detector-based spot size converter | |
| CN112596161B (en) | Multi-layer structured spot-size converter and implementation method thereof | |
| CN103487883B (en) | The optical fiber facula conversion coupling mechanism of the passive line waveguide of InP-base and preparation method | |
| CN209117912U (en) | A kind of silicon optical waveguide end coupling device | |
| CN109324372A (en) | A kind of silicon optical waveguide end coupling device | |
| US20210141251A1 (en) | Active region-less modulator and method | |
| CN115857091A (en) | MMI polarization beam splitter of lithium niobate thin film | |
| CN113376743B (en) | Spot-size converter based on long-period grating | |
| CN114068736A (en) | Photoelectric detector | |
| CN111221068B (en) | Polarizer based on sub-wavelength grating structure | |
| CN115857098B (en) | Optical circulator on silicon substrate | |
| CN112649918A (en) | Edge coupler | |
| CN114200582A (en) | SOI-based bidirectional light-collecting vertical grating coupler and working method | |
| CN214954215U (en) | Convex self-enhanced focusing coupling grating coupler | |
| CN113406751B (en) | Optical fiber and waveguide coupling spot size converter with 850nm waveband | |
| CN114815057A (en) | Focusing type vertical grating coupler and preparation method thereof | |
| CN111025474B (en) | Silicon waveguide mode coupler covering SU-8 cladding based on refractive index regulation | |
| JPH0743552A (en) | Optical waveguide element for coupling semiconductor laser diode and waveguide type module using the same | |
| CN115616703A (en) | Grating coupler based on double-layer silicon nitride structure and manufacturing method thereof | |
| CN117968840B (en) | Photodetector and chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20220318 |