CN112596161B - Multi-layer structured spot-size converter and implementation method thereof - Google Patents
Multi-layer structured spot-size converter and implementation method thereof Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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Abstract
The invention discloses a spot size converter with a multilayer structure and a realization method thereof, and the spot size converter comprises: the waveguide comprises a substrate, a buffer layer positioned on the substrate and a composite waveguide positioned on the buffer layer; the composite waveguide comprises the following components in sequence from bottom to top: the multilayer stepped structure comprises a first refractive index layer with a multilayer stepped structure in the vertical direction and a second refractive index layer matched with the multilayer stepped structure, wherein the first refractive index layer and the second refractive index layer in the multilayer stepped structure are complementary in thickness; by adopting the spot size converter, the spot size converter and the photonic chip functional area can be manufactured simultaneously.
Description
Technical Field
The invention belongs to the field of photonic chips, and particularly relates to a spot size converter technology.
Background
The photonic chip is a chip integrated with various complex optical waveguide structures, such as a Mach-Zehnder interferometer, a directional coupler, an array waveguide grating, a micro-ring and the like. These chips can be made of a variety of functional materials such as silicon-on-insulator (SOI), silicon nitride, thin film lithium niobate, etc., and can serve a variety of functions such as filtering, modulation, beam splitting, switching, etc. They have important applications in the fields of optical communication, optical sensing, optical information processing and the like, and are one of the key devices in these fields. In recent years, with the rapid increase in demand from 5G, optical communication backbone and access networks, and data centers, photonic technology has rapidly developed. At present, modulators based on silicon photonic technology have been applied to data centers, photonic chips based on silicon nitride photonic technology for optical information processing related to optical delay, optical filtering and the like are attracting attention, and photonic chips based on thin-film lithium niobate photonic technology for optical modulation and optical frequency comb are more of the army protuberant, and become research hotspots in recent years.
The photonic chips have a common characteristic that the related waveguides are small in size, and the thickness and the width of the waveguide are usually less than 1 micrometer, which is often called as micro-nano waveguide. The mode field of these micro-nano waveguides has a large mismatch with the mode field of a single-mode fiber (the core diameter is about 8 microns), which causes a large mode field mismatch loss when these photonic chips are coupled with the single-mode fiber to realize the input/output of optical signals, and hinders the practical use of the chips. To solve this problem, researchers have proposed two main approaches, one is to use a grating coupler and the other is to use a spot (or mode size) converter. The mode spot converter is manufactured at an input/output waveguide of the photonic chip, the mode field of the mode spot converter is matched with the mode field of the optical fiber at the input end, and the mode field of the mode spot converter is matched with the mode field of the micro-nano waveguide of the photonic chip at the output end, so that the conversion from the mode field of the optical fiber to the mode field of the micro-nano waveguide is realized, and the coupling efficiency is increased. Compared with a grating converter, the spot-size converter can realize higher coupling efficiency and lower polarization-dependent loss, and a simpler chip packaging technology is a main mode for realizing high-efficiency optical fiber and micro-nano structure optical waveguide coupling. Currently, there are many reports of the design and experimental work of spot size converters, which are basically implemented based on a waveguide with a horizontal tapered structure placed in the center of the converter. The tapered waveguide is divided into two categories according to the position relative to the optical fiber, wherein one category is the inverted cone-shaped spot size converter, and the other category is the forward cone-shaped spot size converter. The inverted cone-shaped spot size converter has a narrow width at one end (input end) connected with an optical fiber and a wide width at one end (output end) connected with a micro-nano chip functional area, and the forward cone-shaped spot size converter is opposite to the reverse cone-shaped spot size converter, namely the forward cone-shaped spot size converter has a wide input end and then gradually narrows until the forward cone-shaped spot size converter is equal to the waveguide width of the micro-nano chip functional area. In principle, in order to achieve high coupling efficiency, the width of the tapered waveguide at the input end of the inverted cone-shaped spot size converter should be as narrow as possible, usually at least less than 200 nm, and the tapered waveguide should be placed in the center of the spot size converter, however, the implementation of the width and placement position of the waveguide puts extremely high requirements on the process technology, and the process technology of secondary alignment and photoetching with high precision is required, which results in low yield of devices and increases the cost of chips. In comparison, the forward tapered spot size converter does not need to manufacture a waveguide as narrow as 200 nm, but still has a higher requirement on the symmetry of the tapered waveguide placement of the converter, so although the process difficulty is reduced, a high-precision secondary alignment and lithography technology is still required, and the cost of the device is also increased.
Finally, it should be pointed out that most of the reported spot size converters are applied to silicon photonic chips, and in the field of emerging thin film lithium niobate photonic chips at present, the research on the relevant spot size converters is still less, and no spot size converter suitable for mass production is successfully developed, so that the development of the relevant research and industry is greatly hindered.
Disclosure of Invention
In order to solve the technical problems, the invention provides a multi-layer structured spot size converter and an implementation method thereof, which convert an inverted cone structure with a narrow width in a horizontal direction, which is difficult to manufacture, into a multi-layer waveguide structure in a vertical direction, which is easy to manufacture, and greatly reduce the difficulty of process manufacture while realizing high-efficiency coupling.
The technical scheme adopted by the invention is as follows: a spot-size converter of multilayer construction comprising: the waveguide comprises a substrate, a buffer layer positioned on the substrate and a composite waveguide positioned on the buffer layer; the composite waveguide comprises the following components in sequence from bottom to top: the multilayer stepped structure comprises a first refractive index layer with a multilayer stepped structure in a vertical direction, and a second refractive index layer matched with the multilayer stepped structure, wherein the first refractive index layer and the second refractive index layer in the multilayer stepped structure are complementary in thickness.
The thickness of the multi-layered stepped structure portion of the first refractive index layer increases in order from the input end to the output end of the spot size converter, and the thickness of the second refractive index layer decreases in order from the input end to the output end of the spot size converter.
The number of the step layers of the step structure is greater than or equal to 3.
And one or two low-refractive-index difference materials covering the composite waveguide.
The first refractive index layer is made of a high refractive index difference material.
The high-refractivity material is one of silicon, silicon nitride and lithium niobate films.
The device also comprises a straight waveguide, wherein two ends of the straight waveguide are respectively connected with one spot size converter, and the two spot size converters are symmetrical relative to the straight waveguide.
The invention also provides an implementation method of the spot-size converter, which comprises the following steps:
s1, preparing a buffer layer n 2 Layer and high refractive index n 1 The starting material of the layer;
s2, n in the starting material 1 Two symmetrical multilayer step structures are manufactured at two ends of the layer;
s3, n after the processing of the step S2 1 Fabricating n on layer matching with its structure 3 A layer;
and S4, simultaneously manufacturing the spot-size converter and the straight waveguide.
The invention has the beneficial effects that: the spot-size converter converts an inverted cone-shaped structure which is difficult to manufacture and has a narrow width in the horizontal direction into a multilayer waveguide structure which is easy to manufacture and in the vertical direction, and greatly reduces the difficulty of process manufacture while realizing high-efficiency coupling by optimizing the width of a device; the manufacturing of the spot size converter provided by the invention is completely compatible with a CMOS (complementary metal oxide semiconductor) process, a high-precision secondary register photoetching process is not required, and the spot size converter and the functional region of the photonic chip can be manufactured simultaneously, so that the spot size converter has the advantages of low requirement on equipment, simple process and easiness in control of process parameters; the invention reduces the requirements on the manufacturing equipment and the manufacturing process of the spot-size converter on the premise of ensuring higher coupling efficiency, and the spot-size converter and the chip functional area can be manufactured simultaneously by adopting the spot-size converter to manufacture the photonic chip; thereby reducing the manufacturing cost of the device.
Drawings
FIG. 1 is a basic structure diagram of a multi-layer spot-size converter according to the present invention;
FIG. 2 is a simulation result of optical transmission of the spot size converter of FIG. 1 according to the present invention;
FIG. 3 is a diagram showing the connection structure of two multi-layer spot-size converters and a straight waveguide, taking a chip functional region as a straight waveguide as an example in the present invention;
FIG. 4 is a block diagram of a multi-layer spot-size converter with n1 layers widened at the input end according to the present invention;
FIG. 5 shows a diagram of n in the present invention 1 The multilayer spot size converter structure diagram with ridge waveguide adopted in the layer;
FIG. 6 shows a diagram of n in the present invention 3 The structure diagram of the multilayer spot size converter is characterized in that n1 layers are completely covered by layers;
FIG. 7 shows a low refractive index n according to the present invention 4 Layer (refractive index n) 4 ) A multilayer spot size converter architecture further covering the architecture shown in figure 1;
FIG. 8 is a flow chart of the present invention for fabricating a photonic chip using two multi-layer spot-size converters connected to a straight waveguide as shown in FIG. 3.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1, the spot-size converter of the present invention includes: low refractive index n 3 Layer (assuming refractive index n 3 =1.4446, abbreviation n 3 Layer n 3 <n 1 ) And a high refractive index n 1 Layer (assuming refractive index n 1 =2.1381, abbreviation n 1 Layer) and a low-emissivity n as a buffer layer 2 Layer (assuming refractive index n 2 =1.4446, abbreviation n 2 Layer n 2 <n 1 ，n 2 May be less than n 3 May also be equal to n 3 ). By optimally designing the waveguide structure parameters of the input end (connecting optical fiber) of the spot size converter, the mode field of the spot size converter is matched with the mode field of the optical fiber as much as possible, so that the optical signal from the optical fiber is coupled into the input end efficiently;then the optical signal is transmitted to the output end along the spot-size converter, and the transmission process is undergone by n 3 Layer and n 1 5-layer stepped composite waveguide formed by layers, due to n in the 5-layer stepped composite waveguide 3 The layer thickness decreases stepwise, and n 1 The thickness of the layer increases in steps, so that the optical mode field will be from n during transmission 3 The layer distribution being in the main direction n 1 The layer distribution is the dominant evolution, and in order to realize low-loss evolution, the thickness change of each step needs to be according to n 1 Layer thickness and n 1 And n 3 The difference of the steps is optimally designed to ensure that the light wave coupling efficiency between the steps meets the application requirement, for example, not less than 99 percent; at the output end due to n 1 Layer waveguide and chip functional region n 1 The layer waveguides are identical and therefore the mode fields are perfectly matched, so that the optical signal can be efficiently coupled to the chip functional area. An example is for n above 1 ，n 2 ，n 3 For n, of refractive index of 1 In the case of a layer thickness of 500nm and a fixed spot size converter width of 3.5 μm, the steps may be arranged in 5 layers, each layer having a step difference of 100nm 3 The layer thickness was 3.5 microns.
As shown in FIG. 2, the light simulated in this embodiment is transmitted through the multi-layer waveguide spot size converter shown in FIG. 1, specifically, the intensity distribution of the light wave transmitted from the input end to the output end of the spot size converter shown in FIG. 1, the abscissa is the transmission distance, the origin of coordinates 0 is the transmission starting point on the abscissa, and n is the ordinate 2 And n 3 The layer interfaces such that the ordinate corresponds to different heights of the spot-size converter. Wherein the horizontal line at 3.5 microns represents n 3 The boundaries of the layers. The parameters used in the simulation were the parameters of the above-described embodiment.
FIG. 3 is a case where a straight waveguide, which may be considered as a functional region of a photonic chip, is connected using two spot-size converters as shown in FIG. 1, this example being intended to demonstrate n of the proposed optical waveguide spot-size converter 1 The layer waveguide and the waveguide in the functional area of the photonic chip are made of the same material, and the two waveguides can have the same width, so that the low-loss mode spot converter is realized to the photonic chipIs optically coupled.
It should be noted that, in addition to the structure of fig. 1, the multi-layer structure spot size converter proposed by the present invention can be realized by using the structures shown in fig. 4, fig. 5, fig. 6, or fig. 7, and the possible structures are not limited to the above examples, but they all have a common feature that the core of the spot size converter is a stepped multi-layer (greater than or equal to 3 layers) waveguide structure formed by a low refractive index material and a high refractive index material.
In the structure shown in FIG. 4, n 1 The layer has a widened waveguide structure at the input end.
In the structure shown in FIG. 5, n 1 The layer has a ridge waveguide structure.
In the structure shown in FIG. 6, n 3 Layer completely covers n 1 A layer waveguide.
In the structure shown in FIG. 7, n is a low refractive index 4 Layer (in the present invention, n 4 Refractive index of layer n 4 ) Further covering the structure shown in figure 1. FIG. 7 shows a low index n4 layer, specifically one or two low index difference materials, covering the top or periphery of the composite waveguide, n 4 The refractive index of the layer should be less than n 3 Of refractive index such that n 4 The layer will be taken as n 3 Thereby confining light to n 3 A layer.
The high index-contrast material in this embodiment may be, but is not limited to, a silicon, silicon nitride, lithium niobate thin film.
The number of layers of the optical waveguide of the multilayer step structure is more than 3, and the layer thickness can be different but has a step-like characteristic.
The low-index-difference material in this embodiment may be, but is not limited to, silicon dioxide, silicon oxynitride, various polymers, and the like; the low refractive index difference materials can completely cover the stepped waveguide made of the stepped high refractive index difference materials, and can also only cover the upper part of the stepped waveguide; the composite step structure formed by the low refractive index difference material and the high refractive index difference material may be covered or uncovered by another material with a lower refractive index;
fig. 8 is a flow chart showing a process of manufacturing the optical waveguide device shown in fig. 3 according to the present invention, which includes a straight waveguide (in this case, the straight waveguide serves as a photonic chip functional region) and two multi-layer spot-size converters, and specifically includes:
(1) Low emissivity n with buffer layer 2 Layer and high refractive index n 1 The starting material of the layer;
(2) In the starting material n 1 Making (etching) multiple steps on the layer;
(3) Manufacture and n 1 Multilayer step structure matched n of layers 3 A layer;
(4) And simultaneously manufacturing the spot-size converter and the straight waveguide.
In summary, the invention constructs a novel spot size converter, which reduces the requirements on the spot size converter manufacturing equipment and manufacturing process on the premise of ensuring higher coupling efficiency, thereby reducing the manufacturing cost of devices. Therefore, the invention has good practical application value.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (9)
1. A spot-size converter of a multilayer structure, comprising: the waveguide structure comprises a substrate, a buffer layer positioned on the substrate, a composite waveguide positioned on the buffer layer and a cladding covering the composite waveguide; the composite waveguide comprises the following components in sequence from bottom to top: the multilayer stepped structure comprises a first refractive index layer with a multilayer stepped structure in the vertical direction and a second refractive index layer matched with the multilayer stepped structure, wherein the first refractive index layer and the second refractive index layer in the multilayer stepped structure are complementary in thickness;
the thickness of the multi-layered stepped structure portion of the first refractive index layer increases in order from the input end to the output end of the spot size converter, and the thickness of the second refractive index layer decreases in order from the input end to the output end of the spot size converter.
2. The spot-size converter according to claim 1, wherein the number of the step layers of the step structure is greater than or equal to 3.
3. The spot-size converter according to claim 2, further comprising one or two low-index-difference materials covering the composite waveguide.
4. The spot converter according to claim 3, wherein the first refractive index layer is made of a high refractive index difference material.
5. The spot-size converter according to claim 4, wherein said high refractive index difference material is one of silicon, silicon nitride, and lithium niobate thin films.
6. The spot converter according to claim 5, wherein the first refractive index layer is a ridge waveguide, and the multi-layer stepped structure is formed on the ridge portion; the second refractive index layer completely covers the first refractive index layer.
7. The spot converter according to claim 5, wherein the first refractive index layer is a ridge waveguide, and the multi-layer stepped structure is formed on the ridge portion; the second refractive index layer covers the first refractive index layer ridge type portion.
8. The spot converter according to claim 6 or 7, further comprising a straight waveguide, wherein one spot converter is connected to each end of the straight waveguide, and the two spot converters are symmetrical with respect to the straight waveguide.
9. A method for implementing the spot-size converter according to claim 8, comprising:
s1, preparing a buffer layer n 2 Layer and high refractive index n 1 The starting material of the layer;
s2, n in the starting material 1 Two symmetrical multilayer step structures are manufactured at two ends of the layer;
s3, n after the processing of the step S2 1 Fabricating n on layer matching with its structure 3 A layer;
and S4, simultaneously manufacturing the spot-size converter and the straight waveguide.
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| CN113568105B (en) * | 2021-06-17 | 2024-02-13 | 中国科学院微电子研究所 | Waveguide interlayer coupling structure and preparation method thereof |
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| CN114594547B (en) * | 2022-03-31 | 2023-09-01 | 南开大学 | Optical waveguide coupler and method for manufacturing the same |
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