CN111522096B - Method for preparing silicon waveguide and silicon oxide waveguide mode converter - Google Patents
Method for preparing silicon waveguide and silicon oxide waveguide mode converter Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
Abstract
A silicon waveguide and silicon oxide waveguide mode converter and a preparation method thereof relate to the technical field of optical communication and optical sensing, and the converter comprises: the silicon substrate, the silicon dioxide bottom cladding, the single-mode silicon waveguide core, the wedge-shaped waveguide core, the single-mode silicon dioxide waveguide core and the silicon dioxide upper cladding; the silicon dioxide bottom cladding is arranged on the silicon substrate, and a single-mode silicon waveguide core, a wedge-shaped waveguide core and a single-mode silicon dioxide waveguide core are sequentially arranged on the silicon dioxide bottom cladding from one end to the other end; the single-mode silicon waveguide core, the wedge-shaped waveguide core and the single-mode silicon dioxide waveguide core are of an integrated structure, and the single-mode silicon dioxide waveguide core is of a strip structure; the part of the wedge-shaped waveguide core, which is close to the single-mode silicon waveguide core, is a silicon waveguide core, and the part of the wedge-shaped waveguide core, which is close to the single-mode silicon dioxide waveguide core, is a silicon dioxide waveguide core. The method achieves the effect of converting a single mode into a single mode, namely realizes the mode conversion in the waveguide between the silicon single mode waveguide and the silicon oxide single mode waveguide, and finally meets the energy conversion efficiency between the waveguide and the optical fiber.
Description
Technical Field
The invention relates to the technical field of optical communication and optical sensing, in particular to a silicon waveguide and silicon oxide waveguide mode converter and a preparation method thereof.
Background
At present, the capacity and speed of an optical communication network are rapidly increased, so that the transmission and processing of data with ultra-large information quantity are required, and cloud computing also puts higher and higher requirements on the capacity and speed of a computer, so that the thermal energy consumption and electromagnetic interference caused by the fact that an electronic circuit chip bears the ultra-large information quantity by the data transmission and storage of the computer are the main pressure of the next generation of computers. In modern optical fiber communication systems, Planar Lightwave Circuit (PLC) technology based on silicon-on-silicon (SOS) waveguides or Photonic Integrated Circuit (PIC) technology based on silicon-on-insulator (SOI) waveguides has played an increasingly important role in optical transmission systems and WDM optical transmission ROADMs. Data storage and transmission, which is implemented by Optical interconnects and Optical functional devices, is a primary function of Optical data centers (Optical datacenters) and data communications (Datacom). In addition, biomedical sensing devices based on silicon optical waveguide technology are also rapidly developing.
Since the twenty-first century, micro-nano SOI waveguide-based Photonic Integrated Circuits (PICs) and optoelectronic integrated circuits (OEICs) have been successfully applied to optical power splitters, optical switches, optical polarization beam splitters, tunable optical attenuators, optical modulators, wavelength division multiplexing devices, and optical biosensors, and their fabrication techniques are compatible with microelectronic CMOS processes, and thus are widely accepted technology platforms.
However, product development based on SOI technology has shown that this technology also has its inherent disadvantages. The large refractive index difference between the core layer and the cladding layer causes the end face coupling mode mismatch between the waveguide chip and the optical fiber, thereby causing the problem of low coupling efficiency between the photonic integrated circuit chip and the optical fiber; the excessive refractive index difference between the waveguide core and the optical fiber core also creates fresnel reflection loss, and thus has been a key technical problem studied in the field for over twenty years. Currently, two techniques are widely used, based on the physical guided-wave mode conversion: firstly, a longitudinal coupling grating structure is designed and processed at the output end part of the waveguide to realize more effective waveguide-optical fiber end face coupling, but the technical difficulty of the process is higher, and the research report of the coupling loss of less than 1.0dB/facet is not available so far; secondly, the output end part of the waveguide is designed into a trapezoid, an end face coupling grating is manufactured, then the end face of the optical fiber is coupled with the grating from the upper surface of the chip, the optical fiber and the waveguide are positioned on different planes by the technology, and the technology is suitable for laboratory detection and is not suitable for batch packaging, and moreover, the research report of coupling loss of less than 1.0dB/facet is not seen so far. Therefore, the problem of coupling loss between the waveguide chip and the optical fiber is always the 'bottleneck' problem limiting the silicon waveguide integrated device from the laboratory to the industrialization.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a preparation method of a silicon waveguide and silicon oxide waveguide mode converter, which is used for reducing the mode mismatch of silicon optical waveguide-optical fiber coupling and further solving the problem of optical fiber-silicon waveguide coupling loss.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a silicon waveguide and silicon oxide waveguide mode converter, the converter comprising: the silicon substrate, the silicon dioxide bottom cladding, the single-mode silicon waveguide core, the wedge-shaped waveguide core, the single-mode silicon dioxide waveguide core and the silicon dioxide upper cladding; the silicon dioxide bottom cladding is arranged on the silicon substrate, and a single-mode silicon waveguide core, a wedge-shaped waveguide core and a single-mode silicon dioxide waveguide core are sequentially arranged on the silicon dioxide bottom cladding from one end to the other end; the single-mode silicon waveguide core, the wedge-shaped waveguide core and the single-mode silicon dioxide waveguide core are of an integrated structure, and the single-mode silicon dioxide waveguide core is of a strip structure; the part of the wedge-shaped waveguide core, which is close to the single-mode silicon waveguide core, is a silicon waveguide core, and the part of the wedge-shaped waveguide core, which is close to the single-mode silicon dioxide waveguide core, is a silicon dioxide waveguide core.
Preferably, the cross-sectional area of the single-mode silicon waveguide core is smaller than the cross-sectional area of the single-mode silica waveguide core.
Preferably, one end of the single-mode silicon waveguide core is connected to an input or output waveguide of the SOI silicon photonic device, and one end of the single-mode silicon dioxide waveguide core is coupled to an end face of an input or output optical fiber.
Preferably, the single-mode silicon waveguide core and the wedge-shaped waveguide core are ridge-type structures or strip-type structures.
Preferably, the ratio of the width and height of the single-mode silicon waveguide core to the width and height of the single-mode silicon dioxide waveguide core is 2-3: 1.
Preferably, the silica undercladding layer and the silica overcladding layer are both greater than 3 microns thick.
Preferably, the refractive index of the silica upper cladding is smaller than that of the single-mode silica waveguide core.
Preferably, the single-mode silicon waveguide core and the single-mode silica waveguide core or the multimode silicon waveguide core and the multimode silica waveguide core.
A method for preparing a silicon waveguide and silicon oxide waveguide mode converter comprises the following steps:
the method comprises the following steps: the SOI substrate sequentially comprises from bottom to top: a silicon substrate, a silica undercoating layer and a single crystal silicon film; manufacturing a first single-mode ridge type silicon waveguide core, a wedge-shaped silicon waveguide core and a second single-mode ridge type silicon waveguide core on the single-mode silicon film through etching, wherein the single-mode silicon waveguide core, the wedge-shaped silicon waveguide core and the single-mode silicon dioxide waveguide core are of an integrated structure, and the first single-mode ridge type silicon waveguide core is smaller than the second single-mode ridge type silicon waveguide core in cross section;
step two: carrying out second etching on the second single-mode ridge type silicon waveguide core, and etching the second single-mode ridge type silicon waveguide core into a single-mode strip type silicon waveguide core;
step three: carrying out local oxidation on the single-mode strip-type silicon waveguide core to form a single-mode silicon dioxide waveguide core; the wedge-shaped silicon waveguide core is partially oxidized to form a part of wedge-shaped silicon waveguide and a part of wedge-shaped silicon dioxide waveguide;
step four: and depositing a layer of upper cladding with the refractive index smaller than that of the single-mode silica waveguide core on the upper surfaces of the first single-mode ridge type silicon waveguide core, the wedge-shaped waveguide core and the single-mode silica waveguide core.
The invention has the beneficial effects that: the invention adopts physical geometric structure matching, waveguide etching and local oxidation of chemical methods to realize the conversion from the SOI waveguide to the SOS waveguide, thereby forming a core layer of the SOS waveguide and forming a low-refractive-index-difference waveguide structure with an original cladding layer, and can simultaneously solve Fresnel loss and waveguide-optical fiber mode mismatch loss generated between the end face of a waveguide chip and a matching material, namely fundamentally solve the problem of end face coupling loss between the SOI waveguide chip and an optical fiber. The method can control the size, the shape and the refractive index of the cross section of the converted silica waveguide, so that the conversion effect of single-mode conversion from single-mode waveguide is achieved. The conversion of the waveguide core layer material and the waveguide structure is realized by a chemical method, so that the conversion of a waveguide mode is realized, and the energy conversion efficiency between the waveguide and the optical fiber is finally met.
Drawings
FIG. 1 is a schematic diagram of a mode converter of silicon waveguide and silicon oxide waveguide according to the present invention
FIG. 2 is a side view of a single mode silicon waveguide core of a silicon waveguide and silicon oxide waveguide mode converter of the present invention.
FIG. 3 is a side view of a single mode silica waveguide core of a silicon waveguide and silica waveguide mode converter of the present invention.
FIG. 4 is a block diagram of the silicon waveguide and silicon oxide waveguide mode converter of the present invention before the silicon is oxidized to silicon oxide.
Fig. 5 is a diagram of an application system structure after silicon oxide waveguides at the input end and the output end of the silicon waveguide and silicon oxide converter of the present invention are manufactured at two ends of an SOI waveguide device and then coupled with an input end optical fiber and an output end optical fiber.
FIG. 6 shows the results of example 1 of the present invention: and (3) adding a mode converter to obtain a coupling loss simulation result of the end face of the single-mode SOS waveguide and the end face of the single-mode optical fiber.
In the figure: 1. silicon substrate, 2, silica undercladding, 3, single mode silicon waveguide core, 3a, single mode silicon waveguide core a, 4, wedge waveguide core, 4a, wedge waveguide core a, 5, single mode silica waveguide core, 5a, single mode silica waveguide core a, 6, silica overcladding, 7, wedge silicon waveguide core, 8, second single mode ridge type silicon waveguide core, 9, incident optical fiber, 9a, outgoing optical fiber, 10, cladding, 11, incident optical signal, 11a, outgoing optical signal, 12, third mode converter.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples.
As shown in fig. 1, a silicon waveguide and silicon oxide waveguide mode converter, the converter comprising: the silicon-based waveguide core structure comprises a silicon substrate 1, a silicon dioxide bottom cladding layer 2, a single-mode silicon waveguide core 3, a wedge-shaped waveguide core 4, a single-mode silicon dioxide waveguide core 5 and a silicon dioxide upper cladding layer 6; the silicon substrate 1 is provided with a silicon dioxide bottom cladding layer 2, and a single-mode silicon waveguide core 3, a wedge-shaped waveguide core 4 and a single-mode silicon dioxide waveguide core 5 are sequentially arranged on the silicon dioxide bottom cladding layer 2 from one end to the other end; single mode silicon waveguide core 3, wedge waveguide core 4 and single mode silica waveguide core 5 are the integral structure, wedge waveguide core 4 is close to single mode silicon waveguide core 3's part is the silicon waveguide core, and the part that is close to single mode silica waveguide core 5 is the silica waveguide core. The area that single mode silicon waveguide core 3 is close to one side of wedge waveguide core 4 with wedge waveguide core 4 is close to the area of 3 one sides of single mode silicon waveguide core equals, wedge waveguide core 4 is close to the area of 5 one sides of single mode silica waveguide core with the area that single mode silica waveguide core 5 is close to one side of wedge waveguide core 4 equals.
The end views of the silicon waveguide core and silicon oxide waveguide core shown in fig. 2 and 3 can be obtained from the front and back view directions of the structure, respectively, so the structure is an SOI waveguide and SOS waveguide converter: one end of an SOI waveguide, namely a single-mode silicon waveguide core 3 is connected with an input waveguide or an output waveguide of the SOI silicon photonic device, and one end of an SOS waveguide core, namely a single-mode silicon dioxide waveguide core 5 is in optical field mode coupling with the end face of an input or output optical fiber 9.
Wherein the cross-sectional area of the single-mode silicon waveguide core 3 is smaller than the cross-sectional area of the single-mode silicon dioxide waveguide core 5. The single-mode silicon waveguide core 3 is a high-refractive-index waveguide with a width of 2-3 microns and a height of 0.3-1 micron, the single-mode silicon dioxide waveguide core 5 is a low-refractive-index waveguide, and the ratio of the width and the height of the single-mode silicon waveguide core to the width and the height of the single-mode silicon waveguide core 3 is 2-3: 1. When the thicknesses of the silica under-cladding layer 2 and the silica over-cladding layer 6 are similar and greater than 5 μm, the difference in refractive index can be controlled to be about 1.5%. The refractive index of the silica upper cladding 2 is smaller than the single-mode silica waveguide core 5.
The single-mode silicon waveguide core 3 and the wedge-shaped waveguide core 4 are of a ridge structure or a strip structure, and when the single-mode silicon waveguide core 3 and the wedge-shaped waveguide core 4 are of the ridge structure, the coupling efficiency is higher. The single-mode silicon waveguide core 3 and the single-mode silica waveguide core 5 or the multimode silicon waveguide core and the multimode silica waveguide core are directly coupled with the optical fiber 9.
A method for preparing a silicon waveguide and silicon oxide waveguide mode converter comprises the following steps:
the method comprises the following steps: the SOI substrate sequentially comprises from bottom to top: a silicon substrate 1, a silica undercoating layer 2 and a single crystal silicon film; the thickness of the single-crystal silicon film is 1.5-2.5 micrometers, as shown in fig. 4, a first single-mode ridge type silicon waveguide core, a wedge-shaped silicon waveguide core 7 and a second single-mode ridge type silicon waveguide core 8 are manufactured on the single-crystal silicon film through photoetching and etching or CMOS, the first single-mode ridge type silicon waveguide core, the wedge-shaped silicon waveguide core 7 and the second single-mode ridge type silicon waveguide core 8 are of an integrated structure, and the first single-mode ridge type silicon waveguide core is smaller than the second single-mode ridge type silicon waveguide core 8 in cross section; the area that first single mode ridge silicon waveguide core is close to wedge silicon waveguide core 7 one side with wedge silicon waveguide core 7 is close to the area of first single mode ridge silicon waveguide core one side equals, wedge silicon waveguide core 7 is close to the area of second single mode ridge silicon waveguide core 8 one side with the area of second single mode ridge silicon waveguide core 8 one side that is close to wedge silicon waveguide core 7 equals. The first single-mode ridge type silicon waveguide core is a high-refractive-index waveguide, the width of the first single-mode ridge type silicon waveguide core is 2-3 micrometers, and the height of the first single-mode ridge type silicon waveguide core is 0.3-1 micrometer.
Step two: performing second etching on the second single-mode ridge type silicon waveguide core 8, and etching the second single-mode ridge type silicon waveguide core 8 into a single-mode strip type silicon waveguide core, so that two sides and an upper layer of the single-mode strip type silicon waveguide core are exposed in the air;
step three: locally oxidizing the single-mode strip-shaped silicon waveguide core to form a single-mode silicon dioxide waveguide core 5, and protecting a non-silicon oxide part by using silicon nitride as a mask; the wedge-shaped silicon waveguide core 7 is partially oxidized to form a wedge-shaped waveguide 4 of a partial wedge-shaped silicon waveguide and a partial wedge-shaped silicon dioxide waveguide; the single-mode silica waveguide core 5 is a low-refractive-index waveguide, and the ratio of the width and height of the single-mode silica waveguide core to the width and height of the single-mode silica waveguide core 3 is 2-3: 1.
Step four: and clearing the silicon nitride mask, wherein a layer of refractive index is less than that of the silicon dioxide upper cladding 6 of the single-mode silicon dioxide waveguide core 5 to form the input end and the output end of the SOS waveguide with the low refractive index difference on the upper surfaces of the first single-mode ridge type silicon waveguide core, the wedge-shaped waveguide core 4 and the single-mode silicon dioxide waveguide core 5. The silica undercoating 2 and the silica overcladding 6 both have a thickness greater than 3 microns, with the thickness of the silica undercoating 2 being as thick as possible.
In summary, the width and length of the input end and output end of the designed and processed SOI waveguide photonic or optoelectronic functional device are designed to correspond to the width and length of the input end and output end of the single-mode silica waveguide core 5 to be converted, and are connected with other SOI waveguide widths which do not need to be converted through a wedge-shaped waveguide core 4. Then, etching off other parts of the silicon film on the SOI substrate by photoetching and dry etching process technology to form a silicon strip, wherein the two sides of the silicon strip are deep grooves, so that the upper side and the two sides of the silicon strip are exposed in the air, and further carrying out LOCOS treatment on the silicon strip to form the low-refractive-index single-mode silicon dioxide waveguide core 5. Finally, a lower index upper cladding layer 6 of silica is deposited on the single mode silica waveguide core 5 to form the input and output ends of the low index difference SOS waveguide. This is the SOI-SOS waveguide mode converter shown in fig. 1.
The chemical reaction equation for the conversion of a single-mode strip-type silicon waveguide core to a single-mode silica waveguide core 5 during fabrication is:
Si(solid)+2H2O(vapor)＝SiO2(solid)+2H2(vapor) (1)
namely the process of generating solid silicon dioxide and hydrogen by the chemical reaction between gaseous water molecules and solid silicon molecules at the temperature of 700-1300 ℃. The relationship between the ratio of the physical dimensions of the core 5 from a single-mode strip-type silicon waveguide to a single-mode silica waveguide is:
wherein, XSiAnd XSiO2Respectively, the core 5 may be a single-mode silicon waveguide and a single-mode silicon dioxide waveguide, and may have a width or a thickness, usually RdimThe value range of (A) is between 0.4 and 0.5.
As a general application mode of the present invention, after the input end and the output end of the single-mode silica waveguide 5 are respectively end-coupled and butted with the input fiber 9 and the output fiber 9a, an application system structure as shown in fig. 5 is formed, wherein the process from the input end to the output end of the application system is performed from left to right. In operation, as shown in fig. 5, when an input optical signal 11 is output from the input optical fiber 9, the input optical signal is first end-coupled to the single-mode silica waveguide 5 of the input-end mode converter, and then converted into the single-mode silica waveguide 3 single-mode through the wedge waveguide core 4 as a connecting body, and when the input optical signal is output from the single-mode silica waveguide a 3a, the input optical signal is first converted into the guided-wave mode output of the single-mode silica waveguide a5a through the output-end wedge waveguide a4a, and then end-coupled to the output optical fiber 9 a.
Setting: the structure from the end face of the input optical fiber 9 to the end face of the single-mode silicon waveguide 3 is a first Mode Converter (MC)1) The structure from the end face of the single-mode silicon waveguide a 3a to the end face 9a of the output fiber is a second Mode Converter (MC)2). Let Ef、EC1,in、EC1,out、EWG,in、EWG,out、EC2,inAnd EC2,outRespectively represent normalized optical field amplitudes, P, of the input and output fiber 9 and 9a end faces, the first mode converter input end face, the first mode converter output end face, the single-mode silica waveguide 5 input end face, the single-mode silicon waveguide 3 output end face, the mode converter 2 single-mode silicon waveguide a 3a input end face, and the mode converter 2 single-mode silica waveguide a5a output end faceinAnd PoutThe power conversion efficiency of the fiber-waveguide system formed by connecting the guided wave mode converters is defined by equation (3) as follows:
ηc(z)＝(Pout/Pin)＝(ECI1)·ηmc1·(ECI2)·ηmc0·(ECO1)·ηmc2·(ECO2) (3)
light field conversion EC at four interfaces in FIG. 5I1、ECI2、ECO1And ECO2Defined by equations (4a), (4b), (4c) and (4d), respectively:
wherein the conversion rate of the interface optical field between the end face of the input optical fiber 9 and the single-mode silica waveguide core 5 is ECI1(ii) a The optical field conversion rate at the interface between the single-mode silica waveguide core 5 and the wedge-shaped waveguide core 4 is ECI2(ii) a The optical field conversion at the interface between the wedge waveguide core a4a and the single-mode silica waveguide core a5a is ECO1(ii) a The conversion rate of the interface optical field between the single-mode silica waveguide core a5a and the end face 9a of the emergent fiber is ECO2. Eta in equation (3)mc1、ηmc0And ηmc2The power conversion efficiencies of the first mode converter, the straight waveguide structure (referred to as the third mode converter 12) and the second mode converter, respectively, are usually set to 1.0, or the conversion efficiency is a number smaller than 1 according to the optical loss actually generated by the waveguide, so there is no converter equation, and then the power conversion efficiencies of the other two mode converters are defined as:
the dependence of the coupling loss and the end-face gap after introducing the SOI waveguide and SOS waveguide mode converters in the SOI waveguide and fiber coupling system shown in fig. 5 of the present invention was simulated by equations (3) - (5), and the results shown in fig. 6 were obtained assuming that the efficiency of the two converters was 1.0. It can be seen that the coupling loss at both ends can only reach 0.12dB if the separation is not more than 1.0 micron.
Claims (6)
1. A method of making a silicon waveguide and silicon oxide waveguide mode converter, the converter comprising: the silicon substrate, the silicon dioxide bottom cladding, the single-mode silicon waveguide core, the wedge-shaped waveguide core, the single-mode silicon dioxide waveguide core and the silicon dioxide upper cladding; the silicon dioxide bottom cladding is arranged on the silicon substrate, and a single-mode silicon waveguide core, a wedge-shaped waveguide core and a single-mode silicon dioxide waveguide core are sequentially arranged on the silicon dioxide bottom cladding from one end to the other end; the single-mode silicon waveguide core, the wedge-shaped waveguide core and the single-mode silicon dioxide waveguide core are of an integrated structure, and the single-mode silicon dioxide waveguide core is of a strip structure; the part of the wedge-shaped waveguide core, which is close to the single-mode silicon waveguide core, is a silicon waveguide core, and the part of the wedge-shaped waveguide core, which is close to the single-mode silicon dioxide waveguide core, is a silicon dioxide waveguide core;
the method comprises the following steps: the SOI substrate sequentially comprises from bottom to top: a silicon substrate, a silica undercoating layer and a single crystal silicon film; manufacturing a first single-mode ridge type silicon waveguide core, a wedge-shaped silicon waveguide core and a second single-mode ridge type silicon waveguide core on the single-mode silicon film through etching, wherein the first single-mode ridge type silicon waveguide core, the wedge-shaped silicon waveguide core and the second single-mode ridge type silicon waveguide core are of an integrated structure, and the cross section of the first single-mode ridge type silicon waveguide core is smaller than that of the second single-mode ridge type silicon waveguide core;
step two: carrying out second etching on the second single-mode ridge type silicon waveguide core, and etching the second single-mode ridge type silicon waveguide core into a single-mode strip type silicon waveguide core;
step three: carrying out local oxidation on the single-mode strip-type silicon waveguide core to form a single-mode silicon dioxide waveguide core; oxidizing part of the wedge-shaped silicon waveguide core to form part of a wedge-shaped silicon waveguide and part of a wedge-shaped silicon dioxide waveguide;
step four: depositing an upper cladding with a refractive index smaller than that of the single-mode silica waveguide core on the upper surfaces of the first single-mode ridge-type silicon waveguide core, the wedge-shaped waveguide core and the single-mode silica waveguide core; the silica undercladding layer and the silica overcladding layer each have a thickness greater than 3 microns.
2. The method of claim 1, wherein one end of the single-mode silicon waveguide core is connected to an input or output waveguide of the SOI silicon photonic device, and one end of the single-mode silica waveguide core is coupled to an end face of an input or output optical fiber.
3. The method of claim 1, wherein the single-mode silicon waveguide and tapered waveguide cores are ridge-type structures.
4. The method of claim 1, wherein the ratio of the width and height of the single-mode silicon waveguide core to the width and height of the single-mode silica waveguide core is 1: 2-3.
5. The method of claim 1, wherein the silica upper cladding has a refractive index less than the single-mode silica waveguide core.
6. A method of forming a silicon waveguide and silicon oxide waveguide mode converter according to any one of claims 1 to 5, wherein the single mode silicon waveguide core and the single mode silica waveguide core or the multimode silicon waveguide core and the multimode silica waveguide core.
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| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| CN102047158A (en) * | 2008-05-28 | 2011-05-04 | 光导束公司 | Low index, large mode field diameter optical coupler |
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
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