CN204536588U - Polarization beam splitting spinner - Google Patents
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- CN204536588U CN204536588U CN201520043216.6U CN201520043216U CN204536588U CN 204536588 U CN204536588 U CN 204536588U CN 201520043216 U CN201520043216 U CN 201520043216U CN 204536588 U CN204536588 U CN 204536588U
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Abstract
The utility model provides a kind of polarization beam splitting spinner, at least comprises: be formed in the waveguide in the top layer silicon of SOI material, and described waveguide at least comprises the singlemode input waveguide connected in turn, two etching waveguide and directional couple waveguide; The waveguide of described two etching, comprise the first etched area that one end is connected with the tail end of described singlemode input waveguide and the second etched area being positioned at described first both sides, etched area, the height of described first etched area is greater than the height of described second etched area; Described directional couple waveguide, comprises the straight-through waveguide and curved waveguide that are separated from each other, and described straight-through waveguide connects the tail end of described first etched area, and described curved waveguide is positioned at described straight-through waveguide side.The polarization beam splitting spinner that the utility model provides utilizes the broadband of these two structures and the little feature of size respectively, can solve conventional polarization beam splitting rotary device and can not meet broadband character and the little shortcoming of size simultaneously.
Description
Technical field
The utility model relates to a kind of optical device field, particularly relates to a kind of polarization beam splitting spinner.
Background technology
Along with people are to improving constantly of requiring of information transmission, processing speed with multinuclear calculates the arriving in epoch, the electrical interconnection based on metal will become development bottleneck due to the defect such as overheated, delay, electronic interferences.And adopt light network to replace electrical interconnection, can effectively solve this difficult problem.In the specific embodiments of light network, silicon-based optical interconnection becomes first-selected with its unrivaled cost and technical advantage.Silicon-based optical interconnection can play light network speed fast, be with the advantages such as roomy, anti-interference, low in energy consumption, microelectronic technique maturation, High Density Integration, high finished product rate, the advantage such as with low cost can be made full use of again, its development will promote the development of high-performance computer of new generation, optical communication system, has wide market application foreground.
In the past, the research emphasis of silicon-based optical interconnection mainly realizes various exhibiting optical function device, as silica-based discharge-pumped laser, electrooptic modulator, photodetector, wavelength division multiplex device and mould division multiplexing device etc. on silica-based.Except light network on sheet, other forms of light network inevitably needs to be connected with the external world.Under the technical background of present stage, often adopt optical fiber as externally connecting medium.But on the one hand, the polarization state in optical fiber is random; On the other hand, SOI waveguide has the Refractive Index of Material more much bigger than traditional integrated light guide (as SiO 2 waveguide) poor, makes the effective refractive index difference of TE and TM pattern very large, causes device performance extremely responsive to polarization state.Therefore, if the problem that properly resolver part performance is not Polarization-Sensitive, silicon based photon can only be confined to the research state be not connected with the external world, cannot can realize more complicated device loop or device network as traditional integrated optics, more cannot realize the target that light network substitutes electrical interconnection.Current a solution is the structure for often kind of its polarization insensitive of device specialized designs, but, device under polarization insensitive optimized dimensions is not generally performance the best, and these devices often need special device architecture and complicated technology controlling and process, effect is difficult to ensure; Another solution adopts rectangular waveguide, but this scheme needs precise control of sizes, technique is difficult to realize, and run into coupling, be still Polarization-Sensitive when the configuration such as to bend.
The more effective scheme of one adopts polarity diversity mechanism.The light entering the random polarization of chip from coupling fiber can regard the linear superposition of TE and TM pattern as, these two orthogonal components are after a polarization beam splitting spinner (1 × 2 port), TE pattern remains unchanged, and TM pattern will be converted into TE pattern, and export from adjacent port.The light of these two TE patterns works in the silica-based function element of TE pattern respectively through two, realize various function and signal transacting.Polarization state is reconfigured by contrary process by light again that export, is received by an other optical fiber at output terminal.Below such mechanism, functional device all works in TE pattern, extraneous polarization state does not affect internal work, therefore significantly reduces the designing requirement to function element, improves the feasibility of silicon based photon device in the field such as light network, optical communication and application prospect significantly.
The core devices of above-mentioned polarity diversity mechanism is polarization beam splitting spinner.Need to realize by the conversion of TM pattern to TE pattern in this device, just pattern orthogonal for these two scripts must be become mixed mode, this point can be realized by asymmetrical waveguide.The simplest mode of one takes air top covering, because now the material of top covering (air) and under-clad layer (silicon dioxide) is inconsistent, the symmetry of waveguide cross-section is broken.Although it is less to make such device process steps, because there is no top covering, device easily oxidized, also can absorb moisture in air, make device become unstable.And concerning integrated based on the extensive silicon based opto-electronics of CMOS technology, necessarily required silicon dioxide top covering.The device of air top covering cannot be such with such as modulator, wave filter device carry out integrated.Therefore finding the asymmetric waveguides with silicon dioxide top covering, and realize the polarization beam splitting spinner with silicon dioxide top covering, is the focus that current industry is paid close attention to.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of polarization beam splitting spinner, for solving in prior art the problem being difficult to the polarization beam splitting spinner realizing having silicon dioxide top covering.
For achieving the above object and other relevant objects, the utility model provides a kind of polarization beam splitting spinner, and described polarization beam splitting spinner at least comprises:
Be formed in the waveguide in the top layer silicon of SOI material, described waveguide at least comprises the singlemode input waveguide connected in turn, two etching waveguide and directional couple waveguide;
The waveguide of described two etching, comprise the first etched area that one end is connected with the tail end of described singlemode input waveguide and the second etched area being positioned at described first both sides, etched area, the height of described first etched area is greater than the height of described second etched area;
Described directional couple waveguide, comprises the straight-through waveguide and curved waveguide that are separated from each other, and described straight-through waveguide connects the tail end of described first etched area, and described curved waveguide is positioned at described straight-through waveguide side.
Preferably, described singlemode input waveguide is vertical bar shape.
Preferably, the waveguide of described two etching comprises the waveguide of first pair of etching and the waveguide of second pair of etching that connect in turn, the first etched area in the waveguide of described first pair of etching is also connected with described singlemode input waveguide, and the first etched area in the waveguide of described second pair of etching is also connected with described directional couple waveguide;
Wherein, the width linearity of described first etched area increases progressively;
The width linearity of described second etched area in the waveguide of described first pair of etching increases progressively, and the described second etched area width linearity in the waveguide of described second pair of etching increases progressively.
Preferably, the width of described singlemode input waveguide is 350nm ~ 650nm, is highly 200nm ~ 500nm.
Preferably, comprising:
The duct height of described second etched area is 50nm ~ 150nm;
In the one end be connected with described singlemode input waveguide, the width of described first etched area is identical with the width of described singlemode input waveguide, and the width of described second etched area is 0nm ~ 50nm;
At the waveguide of described first pair of etching and second pair of etching waveguide intersection, the width 50nm ~ 200nm larger than the width of described singlemode input waveguide of described first etched area, the width of described second etched area is 200nm ~ 1000nm;
In the one end be connected with described directional couple waveguide, the width 500nm larger than the width of described first etched area being positioned at the waveguide of described first pair of etching and second pair of etching waveguide intersection of described first etched area, the width of described second etched area is 0nm ~ 50nm.
Preferably, the wavelength coverage entering the light of described polarization beam splitting spinner is 1.25 μm ~ 1.75 μm.
Preferably, described directional couple waveguide comprises successively: coupling zone of transition, main coupled zone and uncoupling zone of transition; Wherein,
In described coupling zone of transition and described main coupled zone, described straight-through waveguide is vertical bar shape; In described coupling zone of transition, described curved waveguide is gradually near the arc-shaped of described straight-through waveguide; In described main coupled zone, described curved waveguide is the vertical bar shape parallel with described straight-through waveguide;
In described uncoupling zone of transition, described straight-through waveguide is the cone-shaped that width narrows gradually; Described curved waveguide is that width is cumulative, and gradually away from the bending of described straight-through waveguide.
Preferably, in described coupling zone of transition, described curved waveguide to be radius the be arc-shaped of 5 μm ~ 50 μm; In described uncoupling zone of transition, described curved waveguide is S shape.
Preferably, comprising:
In described coupling zone of transition and described main coupled zone, the width of described straight-through waveguide is consistent with the width of the tail end of described first etched area, the width of described curved waveguide is 200nm ~ 500nm, and the distance of described straight-through waveguide and described curved waveguide is 0.1 μm ~ 0.25 μm;
At the tail end of described uncoupling zone of transition, the width of described straight-through waveguide is 350nm ~ 650nm, and the width of described curved waveguide is 350nm ~ 650nm, and the distance of described straight-through waveguide and described curved waveguide is 1 μm ~ 2 μm.
Preferably, the length of described coupling zone of transition is 0 μm ~ 50 μm, and the length of described main coupled zone is 0 μm ~ 50 μm, and the length of described uncoupling zone of transition is 10 μm ~ 30 μm.
Preferably, at the tail end of described uncoupling zone of transition, described straight-through waveguide and described curved waveguide are also connected to the single-mode output waveguide of vertical bar shape.
As mentioned above, polarization beam splitting spinner of the present utility model, has following beneficial effect:
1, utilize the first etched area different with the height of the second etched area in the polarization beam splitting spinner that the technical solution of the utility model provides, make the xsect of two etching waveguide asymmetric up and down, thus make in the transmitting procedure of light, along transmission direction, the mode mixture region of light, the i.e. interim form of TE and TM can be there is in the first pair of etching waveguide being arranged in the waveguide of two etching.
2, in the polarization beam splitting spinner that the technical solution of the utility model provides, the patten transformation of described two etching waveguide is broadband, can assist whole devices function in the wavelength coverage of hundreds of nanometers, and described directional coupler have employed strict phase-matching condition, therefore length is shorter, can meet the requirement that high density photoelectricity is integrated.In conjunction with the advantage utilizing these two kinds of structures, can solve in traditional devices and can not meet broadband character and the little shortcoming of size simultaneously.
3, the polarization beam splitting spinner processing technology provided in embodiment of the present utility model is fairly simple, and those skilled in the art all can understand, and the polarization beam splitting spinner that the utility model provides utilizes conventional CMOS technology just can realize.
Accompanying drawing explanation
Fig. 1 is shown as the schematic diagram of the vertical view of the polarization beam splitting spinner provided in embodiment of the present utility model.
Fig. 2 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line AA ' place.
Fig. 3 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line BB ' place.
Fig. 4 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line CC ' place.
Fig. 5 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line DD ' place.
Fig. 6 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line EE ' or dotted line FF ' place.
Fig. 7 is shown as the device cross-section schematic diagram of the polarization beam splitting spinner shown in Fig. 1 at dotted line GG ' or dotted line HH ' place.
Element numbers explanation
100 singlemode input waveguide
101 second etched area
102 first etched area
103 curved waveguides
104 straight-through waveguides
105 export single mode waveguide
106 export single mode waveguide
204 silicon dioxide top coverings
205 silicon dioxide under-clad layers
S1 silicon dioxide top covering height
S2 silicon dioxide under-clad layer height
W1 width
W2 width
W3 width
W4 width
W5 width
W6 width
L1 length
L2 length
L3 length
L4 length
L5 length
L6 length
L7 length
C1 width
C2 width
C3 width
R radius
G1 interval width
G2 interval width
H1 height
H2 height
Embodiment
By particular specific embodiment, embodiment of the present utility model is described below, person skilled in the art scholar the content disclosed by this instructions can understand other advantages of the present utility model and effect easily.
Refer to Fig. 1 to Fig. 7.Notice, structure, ratio, size etc. that this instructions institute accompanying drawings illustrates, content all only in order to coordinate instructions to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, still all should drop on technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, quote in this instructions as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and be not used to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the utility model.
Shown in Fig. 7, the polarization beam splitting spinner provided in the present embodiment is for being formed on SOI material, described waveguides sections (in Fig. 1 label 100,102,103,104 and 105 place part) is formed in top layer silicon, the scope of the height H 1 of top layer silicon is 200nm ~ 500nm, the scope of the thickness S1 of silicon dioxide top covering 204 1 μm ~ 5 μm, the scope of the thickness S2 of silicon dioxide under-clad layer 205 is 1 μm ~ 5 μm.Wherein, the value of the thickness H1 of top layer silicon and the thickness S2 of silicon dioxide under-clad layer 205 is determined by the SOI disk material of all size that market is sold, silicon dioxide top covering 204 is formed by chemical vapor deposition method, and its thickness S1 is according to forming the described chemical vapor deposition method conditional decision of carrying out.
The wavelength coverage entering the light of described polarization beam splitting spinner in the present embodiment is 1.25 μm ~ 1.75 μm.
As shown in Figure 1, whole silica-based polarization beam splitting spinner comprises the waveguide in the top layer silicon being formed in SOI material, and described waveguide at least comprises the singlemode input waveguide 100 connected in turn, two etching waveguide and directional couple waveguide.Be specially the second etched area 101 of the two etching waveguide between the singlemode input waveguide 100 in Fig. 1 between dotted line AA ' to dotted line BB ', dotted line BB ' to dotted line DD ' and the first etched area 102, from the directional couple waveguide dotted line DD ' to dotted line GG '.In addition, in the present embodiment, described waveguide also comprises from the single-mode output waveguide dotted line GG ' to dotted line HH '.
The waveguide of described two etching comprises one end and complies with the first etched area 102 be connected and the second etched area 101 being positioned at described first both sides, etched area 102 with described singlemode input waveguide 100, and described second etched area 101 is lower than described first etched area 102.
Described directional couple waveguide, comprises the straight-through waveguide 104 and curved waveguide 103 that are separated from each other, and described straight-through waveguide 104 connects the tail end of described first etched area 102, and described curved waveguide 103 is positioned at described straight-through waveguide 104 side.
At work, light is incident by the singlemode input waveguide 100 dotted line AA ' to dotted line BB ', two etching waveguide (101,102) again between dotted line BB ' to dotted line DD ' and the directional couple waveguide between dotted line DD ' to dotted line GG ', finally export in the cross section at dotted line GG ' place at curved waveguide 103 and straight-through waveguide 104.Preferably, also the output single mode waveguide 105,106 be attached thereto can be set respectively at two, dotted line GG ' place waveguide sections.
In the present embodiment, to input the single-mode optics of singlemode input waveguide 100 for TE0 pattern and TM0 pattern (those skilled in the art are it is understood that TE0 pattern and TM0 pattern are for orthogonal modes), in the waveguide (101 of described two etching, 102) between, because two etching waveguide comprises the second highly different etched area 101 and the first etched area 102, the waveguide of two etching is made to have asymmetry, orthogonal TE0 and the TM0 pattern of script can be become mixed mode, by the design of relevant structure and parameter, make from dotted line DD ' export to directional couple waveguide for TE0 pattern and TE1 pattern, then through directional couple waveguide, the light of TE0 pattern is exported respectively from curved waveguide 103 and straight-through waveguide 104, thus realization output light is all TE pattern.
Concrete, structure and the principle of work of the polarization beam splitting spinner that the present embodiment provides are as follows:
Wherein, Fig. 2 is the sectional view of the described singlemode input waveguide 100 between dotted line AA ' to dotted line BB '.Composition graphs 1, shown in corresponding diagram 2, in Fig. 1, described singlemode input waveguide 100 is the first width W 1 for width, is highly H1, and length is the vertical bar shape of L1.
General, when the waveguide (rectangular waveguide) of vertical bar shape is highly certain, the wider of waveguide supports that the pattern of transmission is more.
In the present embodiment, described singlemode input waveguide 100 adopts single mode waveguide (namely only supporting the light of transmission TE0 pattern and TM0 pattern), can avoid mode-conversion unnecessary between each pattern or other problems like this.Concrete, in the present embodiment, the height of described singlemode input waveguide 100 is the scope of H1, H1 is 200nm ~ 500nm, and arranging described first width W 1 is that 350nm ~ 650nm is to meet the single mode condition of waveguide.In the present embodiment, the length L1 of described singlemode input waveguide 100 has no particular limits.
Fig. 3 to Fig. 5 is the sectional view of described two etching waveguide between dotted line BB ' to dotted line DD ' in Fig. 1.Composition graphs 1, shown in corresponding diagram 3 to Fig. 5, the waveguide of described two etching comprises one end and complies with the first etched area 102 be connected and the second etched area 101 being positioned at described first both sides, etched area 102 with described singlemode input waveguide 100, the height of described first etched area 102 is H1, and the height of described second etched area 101 is H2.And the height of described first etched area 102 is equal with the height H 1 of described singlemode input waveguide 100, and be greater than the height H 2 of described second etched area 101.
The generation type of described two etching waveguide can utilize double-etching technology.Double-etching technology described in the present embodiment can be: first utilize the first etching technics to etch in top layer silicon shape that height is the singlemode input waveguide 100 of H1, two etching waveguide (comprising the shape of the first etched area 102 and the second etched area 101) and directional couple waveguide, then utilizing mask to cover height is singlemode input waveguide 100, first etched area 102 of H1 and directional couple waveguide, exposes the region of described second etched area 101; Then the second etching technics is utilized to be extremely highly H2 by the high etch of the top layer silicon in the region of described second etched area 101.
Combine with reference to shown in figure 1, the waveguide of described two etching comprises first pair of being positioned between dotted line BB ' to dotted line CC ' and etches second pair of etching waveguide between waveguide and dotted line CC ' place to dotted line DD ' again.Wherein, the length being positioned at the first pair of etching waveguide between dotted line BB ' to dotted line CC ' is L2, and between dotted line CC ' place to dotted line DD ', the length of second pair of etching waveguide is L3.
As shown in Figure 3, described first etched area 102 is W1 at the width with described singlemode input waveguide 100 connecting place (i.e. dotted line BB ' place in Fig. 1), and the second etched area 101 of described first certain side, etched area 102 is C1 at the width of the one end (i.e. dotted line BB ' place in Fig. 1) near described singlemode input waveguide 100.
As shown in Figure 4, described first etched area 102 is etching waveguide with described first pair and second pair of width etching waveguide intersection (i.e. dotted line CC ' place in Fig. 1) is W2, and the second etched area 101 of wherein side, described first etched area 102 is C2 at the width of the one end (i.e. dotted line CC ' place in Fig. 1) near described singlemode input waveguide 100.
As shown in Figure 5, described first etched area 102 is W3 at the width of the connecting place (i.e. dotted line DD ' place in Fig. 1) with directional couple waveguide, and the second etched area 101 of wherein side, described first etched area 102 is C3 at the width of one end (i.e. dotted line DD ' place in Fig. 1) near described directional couple waveguide.
The tapered transmission line that described first etched area 102 in first pair of etching waveguide in FIG between dotted line BB ' to dotted line CC ' increases progressively for width, the width also linear increment of described second etched area 101.
In the present embodiment, dotted line BB ' place in FIG, the width of described first etched area 102 is the width of singlemode input waveguide, and be the first width W 1, scope is 350nm ~ 650nm.The width C 1 of described second etched area 101 is 0nm ~ 50nm.Dotted line CC ' place in FIG, the width W 2=W1+50nm ~ W1+200nm of described first etched area 102, the width C 2 of described second etched area 101 is 200nm ~ 1000nm.Between dotted line BB ' to dotted line CC ', the width of described first etched area 102 is linearly increased to W2 by W1, and the width of described second etched area 101 is linearly increased to C2 by C1.Further, the height H 2 of the second etched area 101 is 50nm ~ 150nm.
Be positioned at the principle of work of the first pair of etching waveguide between dotted line BB ' to dotted line CC ' in annotation before, need first to set forth some concepts, specific as follows:
In general, waveguide is wider, can support that the pattern transmitted is more.Such as, 5 patterns are supported in a waveguide, according to pattern effective refractive index from big to small, respectively from 0 to 4 labels, are called 0 rank mould, 1 rank mould, until 4 rank moulds.This 5 patterns hypothesis has 3 TE patterns and 2 TM patterns, and so TE pattern arranges from big to small according to effective refractive index is TE0, TE1, TE2 respectively, and TM pattern to arrange from big to small according to effective refractive index be TM0 respectively, TM1.Integrate, the pattern that this waveguide propagating 5 patterns can be transmitted is TE0, TM0, TE1, TM1, TE2.
When the transmission of light is carried out in the symmetrical waveguide of general employing, the pattern in waveguide is TE0, TE1, TE2 respectively ..., TM0, TM1, TM2 ...The direction of an electric field of TE is wherein parallel to transverse direction, and the direction of an electric field of TM is perpendicular to the horizontal direction of propagation, if any two patterns ask overlap integral to be all 0 in above-mentioned pattern, so above-mentioned pattern TE0, TE1 isotype is orthogonal modes.
If but waveguide cross-section is not symmetrical, both out of plumb was also not parallel for the direction of an electric field of the pattern that waveguide so under some size is supported, pattern shows neither TE neither the mixed mode of TM, is namely understood as the interim form of TE and TM.
Concrete, in the present embodiment, on the basis of the width W 1 and height H 1 that determine singlemode input waveguide, by to the width W 2 of the first etched area 102 at dotted line CC ' place, second etched area 101 is in the width C 1 at dotted line BB ' place, second etched area 101 is in the setting of the width C 2 at dotted line CC ' place and these four parameters of height H 2 of the second etched area 101, waveguide can be made at the xsect (shown in Fig. 3 xsect) at dotted line BB ' place support that the 0 rank mould of light transmitted is TE0 pattern, 1 rank mould is TM0 pattern, and xsect (shown in Fig. 4 xsect) at dotted line CC ' place support that 0 rank mould of the light transmitted is TE0 pattern, 1 rank mould is TE1 pattern, 2 rank moulds are TM0 pattern.
Because the first etched area 102 is different with the height of the second etched area 101, make the xsect of two etching waveguide asymmetric up and down, therefore in transmitting procedure, along transmission direction, mode mixture region can be there is, i.e. the interim form of TE and TM in the first pair of etching waveguide be arranged between dotted line BB ' to dotted line CC '.
So 1 rank TM0 pattern of cross section, dotted line BB ' place input can be converted into the 1 rank TE1 pattern that cross section, dotted line CC ' place exports lentamente, and 0 rank TE0 pattern of cross section, dotted line BB ' place input is in cross section, dotted line CC ' place, and output remains unchanged, it is still 0 rank mould TE0 pattern.
Therefore being positioned at the waveguide of between dotted line BB ' to dotted line CC ' first pair etching, to achieve TE0 mode-conversion be TE1 pattern.Namely input singlemode input waveguide 100, and transfer to TE0 pattern and the TM0 pattern in cross section, dotted line BB ' place, through the transmission of first pair of etching waveguide, what export in cross section, dotted line CC ' place is TE1 pattern and TM0 pattern.
Specifically the above-mentioned mode-conversion principle based on two etching waveguide is concrete with reference to disclosing paper: J.Wang, M.Qi, Y.Xuan, H.Huang, Y.Li, M.Li, X.Chen, Q.Jia, Z.Sheng, A.Wu, W.Li, X.Wang, S.Zou, and F.Gan, " Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplersand an assisted bi-level taper; " Optics Express 22,27869-27879 (2014).
In addition, the value of the height H 2 of the second etched area 101 of the first pair of etching waveguide between dotted line BB ' to dotted line CC ' is except ensureing the needs of above-mentioned mode-conversion, also should consider that etching technics is easier to control in this interval internal ratio, and the process allowance of now device fabrication is higher.Second etched area 101 considers the alignment error (<50nm) between twice etching technique in the maximal value of the width C 1 at dotted line BB ' place.In order to ensure to become enough slow along the shape of the waveguide cross-section on the direction of propagation, namely realize adiabatic model to transform, reduce mode-conversion loss, the length L2 being positioned at the first pair of etching waveguide between dotted line BB ' to dotted line CC ' wants long enough, L2=20-100 μm herein.
The tapered transmission line that described first etched area 102 in second pair of etching optical waveguide in FIG between dotted line CC ' to dotted line DD ' increases progressively for width, the width of described second etched area 101 is linear decrease.
In the present embodiment, dotted line CC ' place in FIG, the width W 2=W1+50nm ~ W1+200nm of described first etched area 102, the width C 2=200nm ~ 1000nm of described second etched area 101.Dotted line DD ' place in FIG, the width W 3=W2 ~ W2+500nm of described first etched area 102, the width C 3 of described second etched area 101 is 0nm ~ 50nm.Between dotted line BB ' to dotted line CC ', the width of described first etched area 102 is linearly increased to W3 by W2, and the width of described second etched area 101 is linearly reduced to C3 by C2.Further, the height H 2 of the second etched area 101 is 50nm ~ 150nm.
Concrete, in the present embodiment, on the basis determining the first etched area height H 1 and the second etched area height H 2, by to the width W 3 of the first etched area 102 at dotted line DD ' place, second etched area 101 is in the setting of these two parameters of width C 3 at dotted line DD ' place, waveguide can be made at the xsect (shown in Fig. 5 xsect) at dotted line DD ' place support that the 0 rank mould of light transmitted is TE0 pattern, 1 rank mould is TE1 pattern, and xsect (shown in Fig. 4 xsect) at dotted line CC ' place support that 0 rank mould of the light transmitted is TE0 pattern, 1 rank mould is TE1 pattern, 2 rank moulds are TM0 pattern.
Because the 1 rank mould of CC ' is TE1, DD ' 1 rank mould be also TE1, so there will not be mode mixture district between dotted line CC ' to dotted line DD ' second pair etching optical waveguide.
The TE1 pattern that second pair of etching optical waveguide between dotted line CC ' to dotted line DD ' keeps support dotted line CC ' cross section place to support and TM0 pattern are to cross section, dotted line DD ' place, make the width of the second etched area in two etch areas linearly be kept to C3 by C2 simultaneously, and the width of the first etched area linearly increases to W3 by W2, namely waveguide fades to the waveguide of non-two etching of dotted line DD ' from two etching waveguide.
In addition, the maximal value of the width C 3 of the second etched area 101 considers the alignment error (<50nm) between twice etching technique.And in order to ensure that the width of waveguide in the second etched area 101 to be reduced to C3 process from C2 still can support the needs of phase-matching condition 3 patterns and directional couple waveguide, the width of the first etched area 102 slowly must become greater to W3.In order to ensure that adiabatic model transforms, between dotted line CC ' place to dotted line DD ', the length L3 of second pair of etching waveguide needs long, L3=20um ~ 100um herein.
Shown in corresponding diagram 6, be the cross section situation of the described directional couple waveguide in Fig. 1 between dotted line DD ' to dotted line GG ', be mainly dotted line EE ' or cross section, dotted line FF ' place.Combine with reference to shown in figure 1, described directional couple waveguide comprises successively again: from the main coupled zone the coupling zone of transition dotted line DD ' to dotted line EE ', dotted line EE ' to dotted line FF ' and uncoupling zone of transition between dotted line FF ' and dotted line GG '; Wherein, in described coupling zone of transition and described main coupled zone, described straight-through waveguide is vertical bar shape; In described coupling zone of transition, described curved waveguide is gradually near the arc-shaped of described straight-through waveguide; In described main coupled zone, described curved waveguide is the vertical bar shape parallel with described straight-through waveguide; In described uncoupling zone of transition, described straight-through waveguide is the cone-shaped that width narrows gradually; Described curved waveguide is that width is cumulative, and gradually away from the bending of described straight-through waveguide.Concrete, the situation of the every part of described directional couple waveguide is as follows:
A) the coupling zone of transition in Fig. 1 between dotted line DD ' to dotted line EE '.
The straight-through waveguide 104 of described directional couple waveguide is being connected with described two tail end etching the first etched area 102 of waveguide in turn near described two etching waveguide end (i.e. dotted line DD ' place in Fig. 1), width is consistent with the width of described first etched area 102, is W3.Described curved waveguide 103 is initial from the plane (i.e. cross section, dotted line DD ' place Fig. 1) at the waveguide 102 of described two etching and place, described straight-through waveguide 104 border, and be positioned at the side of described straight-through waveguide 104, width is W4.
Dotted line EE ' place in FIG, the width of described straight-through waveguide 104 is still W3, and the width of described curved waveguide 103 is still W4, and the distance between described straight-through waveguide 104 and curved waveguide 103 is G1, and is less than dotted line DD ' place distance in FIG.
This part introduces one section of radius in straight-through waveguide 104 side is R, and width is the adjacent waveguide of curved waveguide as straight-through waveguide of the arc-shaped of W4.Adjacent waveguide is that the curved waveguide of arc-shaped can ensure that the spacing between straight-through waveguide 104 and curved waveguide 103 slowly reduces, thus avoids the adjacent waveguide that introducing one is straight suddenly and the additional mode mismatch loss caused.The radius R of the curved waveguide of arc-shaped is larger, and the spacing change between curved waveguide and straight-through waveguide is slower, the length L4 of straight-through waveguide can be needed longer, increase device area.If but the radius R of the curved waveguide of arc-shaped is too little, bending loss can be brought excessive.In the present embodiment, the radian of described curved waveguide is R=5 μm ~ 50 μm, L4=0 μm ~ 50 μm, W4=200nm ~ 500nm, by regulating this three parameters, ensures that two waveguide spacing on DD ' face are greater than 1 μm.Wherein the value of W4 is determined by the directional couple waveguide EE ' to FF '.
This region is as the zone of transition between two etching waveguide and main coupled zone, and the pattern of input is mainly transmitted in straight-through waveguide 104.But along with the spacing of straight-through waveguide 104 and curved waveguide 103 reduces gradually, coupling between the two can be strengthened gradually, the Partial Power of straight-through waveguide 104 can pass in curved waveguide 103, for the patten transformation in main coupled zone provides precondition.
B) the main coupled zone in Fig. 1 between dotted line EE ' to dotted line FF '.
Dotted line FF ' place in FIG, the width of described straight-through waveguide 104 is still W3, and the width of described curved waveguide 103 is still W4, and the distance between described straight-through waveguide 104 and curved waveguide 103 is still G1.
The waveguide cross-section schematic diagram of this part as shown in Figure 6, straight-through is spaced apart G1 between waveguide 104 and curved waveguide 103.The minimum value of described interval G1 is determined by craft precision.And G1 is larger, in order to complete mode-conversion, the length L5 of straight-through waveguide and curved waveguide is longer, makes device size longer, so G1 can not be too large.Curved waveguide width W 4 value demand fulfillment phase-matching condition, namely the effective refractive index of width to be the effective refractive index of 0 rank mould TE0 mould of the adjacent waveguide of W4 and width be 1 rank mould TE1 pattern of the straight-through waveguide of W3 is equal.(can be specifically K.Okamoto with reference to author according to coupled mode theory, title is the books of " Fundamentals of optical waveguides "), after such phase-matching condition meets, luminous power can cyclical variation between two waveguides, therefore, after certain length L5, in straight-through waveguide, TE1 can be converted into the TE0 in adjacent waveguide completely.And the effective refractive index of TE0 pattern is certainly not identical with the effective refractive index of any pattern in adjacent waveguide in now straight-through waveguide, so TE0 pattern is still transmitted in straight-through waveguide.The length L5 of main coupled zone, after determining G1 and W4, can determine according to coupled mode theory.Concrete, in the present embodiment, G1=0.1 μm ~ 0.25 μm, W4 is 200nm ~ 500nm, L5 is 0 μm ~ 50 μm.
The straight-through waveguide 104 of main coupled zone and the shape of curved waveguide 103 are all vertical bar shapes, as long as both width meet phase-matching condition, the pattern of straight-through waveguide 104 will be converted to the pattern in the curved waveguide 103 of side vertical bar shape.
C) the uncoupling zone of transition in Fig. 1 between dotted line FF ' and dotted line GG '.
Dotted line GG ' place in FIG, i.e. the end of described directional couple waveguide, the width of described straight-through waveguide 104 is W6, and being less than W3, the width of described curved waveguide is W5, and is greater than W4, distance between described straight-through waveguide 104 and curved waveguide 103 is G2, and is greater than G1.
In uncoupling zone of transition, the width of straight-through waveguide 104 is linearly reduced to W6 by W3.And the width of curved waveguide 103 is increased to W5 by the curved waveguide of one section of S shape or the curved waveguide of other types by W4, the side-play amount of curved waveguide needs to ensure that the spacing between the straight-through waveguide 104 at dotted line GG ' place in Fig. 1 and curved waveguide 103 is G2.In the present embodiment, G2=1 μm ~ 2 μm, can ensure that the straight-through waveguide 104 at dotted line GG ' place and the inter mode of curved waveguide 103 are no longer coupled, but G2 is also unsuitable excessive, not so device can be elongated.Decide primarily of G2 at the length L6 of uncoupling zone of transition, G2 is larger, and L6 is larger.In the present embodiment, the length L6 of uncoupling zone of transition is 10 μm ~ 30 μm.
Concrete, shown in corresponding diagram 1, the TE0 pattern that the described directional couple waveguide in Fig. 1 between dotted line DD ' to dotted line GG ' inputs for cross section, dotted line DD ' place, can remain on cross section, dotted line GG ' place output TE0 pattern constant; For input TE1 pattern, can be coupled in adjacent curved waveguide 103, and the TE0 pattern be converted in curved waveguide 103 exports in cross section, dotted line GG ' place.
Uncoupling zone of transition, as the zone of transition between main coupled zone and two output ports, by the spacing of straight-through waveguide 104 and curved waveguide 103 is slowly become large, reduces the Mode Coupling between them, reaches finally in the object of output port uncoupling.
Continue with reference to figure 1, composition graphs 7, in the present embodiment, described straight-through waveguide 104 and described curved waveguide 103 are also connected to the single-mode output waveguide of vertical bar shape.Single-mode output waveguide in concrete reference diagram 1 between dotted line GG ' to dotted line HH '.
For the TE0 pattern inputted from input waveguide, will export from straight-through output waveguide, and still keep TE0 pattern constant; And for the TM0 pattern inputted from input waveguide, the adjacent output waveguide from top is exported with TE0 pattern.Straight-through output waveguide width W 6 and adjacent waveguide width W 5 all values between 350nm ~ 650nm, ensure single mode transport.Output waveguide length is L7, not restriction.
So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (10)
1. a polarization beam splitting spinner, is characterized in that, described polarization beam splitting spinner at least comprises:
Be formed in the waveguide in the top layer silicon of SOI material, described waveguide at least comprises the singlemode input waveguide connected in turn, two etching waveguide and directional couple waveguide;
The waveguide of described two etching, comprise the first etched area that one end is connected with the tail end of described singlemode input waveguide and the second etched area being positioned at described first both sides, etched area, the height of described first etched area is greater than the height of described second etched area;
Described directional couple waveguide, comprises the straight-through waveguide and curved waveguide that are separated from each other, and described straight-through waveguide connects the tail end of described first etched area, and described curved waveguide is positioned at described straight-through waveguide side.
2. polarization beam splitting spinner according to claim 1, is characterized in that:
The waveguide of described two etching comprises the waveguide of first pair of etching and the waveguide of second pair of etching that connect in turn, the first etched area in the waveguide of described first pair of etching is also connected with described singlemode input waveguide, and the first etched area in the waveguide of described second pair of etching is also connected with described directional couple waveguide;
Wherein, the width linearity of described first etched area increases progressively;
The width linearity of described second etched area in the waveguide of described first pair of etching increases progressively, and the described second etched area width linearity in the waveguide of described second pair of etching increases progressively.
3. polarization beam splitting spinner according to claim 2, is characterized in that: the width of described singlemode input waveguide is 350nm ~ 650nm, is highly 200nm ~ 500nm.
4. polarization beam splitting spinner according to claim 3, is characterized in that, comprising:
The duct height of described second etched area is 50nm ~ 150nm;
In the one end be connected with described singlemode input waveguide, the width of described first etched area is identical with the width of described singlemode input waveguide, and the width of described second etched area is 0nm ~ 50nm;
At the waveguide of described first pair of etching and second pair of etching waveguide intersection, the width 50nm ~ 200nm larger than the width of described singlemode input waveguide of described first etched area, the width of described second etched area is 200n m ~ 1000nm;
In the one end be connected with described directional couple waveguide, the width 500nm larger than the width of described first etched area being positioned at the waveguide of described first pair of etching and second pair of etching waveguide intersection of described first etched area, the width of described second etched area is 0nm ~ 50nm.
5. polarization beam splitting spinner according to claim 1, is characterized in that: the wavelength coverage entering the light of described polarization beam splitting spinner is 1.25 μm ~ 1.75 μm.
6. polarization beam splitting spinner according to claim 1, is characterized in that: described directional couple waveguide comprises successively: coupling zone of transition, main coupled zone and uncoupling zone of transition; Wherein,
In described coupling zone of transition and described main coupled zone, described straight-through waveguide is vertical bar shape; In described coupling zone of transition, described curved waveguide is gradually near the arc-shaped of described straight-through waveguide; In described main coupled zone, described curved waveguide is the vertical bar shape parallel with described straight-through waveguide;
In described uncoupling zone of transition, described straight-through waveguide is the cone-shaped that width narrows gradually; Described curved waveguide is that width is cumulative, and gradually away from the bending of described straight-through waveguide.
7. polarization beam splitting spinner according to claim 6, is characterized in that: in described coupling zone of transition, described curved waveguide to be radius the be arc-shaped of 5 μm ~ 50 μm; In described uncoupling zone of transition, described curved waveguide is S shape.
8. polarization beam splitting spinner according to claim 6, is characterized in that, comprising:
In described coupling zone of transition and described main coupled zone, the width of described straight-through waveguide is consistent with the width of the tail end of described first etched area, the width of described curved waveguide is 200nm ~ 500nm, and the distance of described straight-through waveguide and described curved waveguide is 0.1 μm ~ 0.25 μm;
At the tail end of described uncoupling zone of transition, the width of described straight-through waveguide is 350nm ~ 650nm, and the width of described curved waveguide is 350nm ~ 650nm, and the distance of described straight-through waveguide and described curved waveguide is 1 μm ~ 2 μm.
9. the polarization beam splitting spinner according to any one of claim 6 to 8, it is characterized in that: the length of described coupling zone of transition is 0 μm ~ 50 μm, the length of described main coupled zone is 0 μm ~ 50 μm, and the length of described uncoupling zone of transition is 10 μm ~ 30 μm.
10. polarization beam splitting spinner according to claim 6, is characterized in that: at the tail end of described uncoupling zone of transition, and described straight-through waveguide and described curved waveguide are also connected to the single-mode output waveguide of vertical bar shape.
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| CN105223647A (en) * | 2015-11-04 | 2016-01-06 | 江苏尚飞光电科技有限公司 | A kind of polarization beam splitting spinner and method for designing thereof |
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| US11409044B2 (en) * | 2020-05-01 | 2022-08-09 | Analog Photonics LLC | Integrated polarization rotation and splitting using mode hybridization between multple core structures |
| CN112327410A (en) * | 2020-11-19 | 2021-02-05 | 西南交通大学 | Two-stage sub-wavelength grating silicon-based optical polarization beam splitting rotator based on asymmetric coupling |
| CN112327411A (en) * | 2020-11-19 | 2021-02-05 | 西南交通大学 | Silicon-based polarization beam splitting rotator based on adiabatic conical asymmetric coupling and Y-branch |
| CN112596282A (en) * | 2020-12-23 | 2021-04-02 | 东南大学 | Broadband adjustable splitting ratio polarization rotation beam splitter based on SOI |
| CN113391395A (en) * | 2021-06-01 | 2021-09-14 | 西安邮电大学 | Compact on-chip polarization beam splitting rotator based on Bezier curve graded waveguide |
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Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee after: Nantong Xinwei Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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