CN108227075A - Curved waveguide structure and polarization beam splitting circulator - Google Patents
Curved waveguide structure and polarization beam splitting circulator Download PDFInfo
- Publication number
- CN108227075A CN108227075A CN201810218999.5A CN201810218999A CN108227075A CN 108227075 A CN108227075 A CN 108227075A CN 201810218999 A CN201810218999 A CN 201810218999A CN 108227075 A CN108227075 A CN 108227075A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- width
- wave guide
- coupled zone
- curved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010287 polarization Effects 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000005452 bending Methods 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 abstract description 13
- 230000005540 biological transmission Effects 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Abstract
The present invention provides a kind of curved waveguide structure, preparation method and the polarization beam splitting circulator based on the curved waveguide structure, curved waveguide structure and includes：Substrate；First wave guide, bending is set on substrate, including the first coupled zone；Second waveguide, bending is set on substrate, second waveguide includes the second coupled zone coupled with the first coupled zone, there is default spacing between second waveguide and first wave guide, second coupled zone includes lower part waveguide and the upper waveguide above the waveguide of lower part, and lower part waveguide is different from the cross-sectional width of upper waveguide.Through the above scheme, curved waveguide structure provided by the invention, by the structure for improving external waveguide, the design of unsymmetric structure is introduced in whole waveguiding structure, so that the both ends of the coupled zone of external waveguide and being respectively provided with different sizes up and down, the asymmetry design have the function of increase bandwidth, solve existing waveguiding structure to wavelength tender subject, further widened the practical application of curved waveguide structure.
Description
Technical field
The invention belongs to semiconductor light electro-technical fields, are rotated more particularly to a kind of curved waveguide structure and polarization beam splitting
Device.
Background technology
As people calculate the continuous improvement of information transmission, processing speed requirement and multinuclear the arriving in epoch, based on gold
The electrical interconnection of category will due to overheating, postpone, electronic interferences the defects of become development bottleneck.And replaced using light network electric mutual
Even, this problem can effectively be solved.In the specific embodiment of light network, silicon-based optical interconnection is with its unrivaled cost
Become first choice with technical advantage.Silicon-based optical interconnection can play light network speed it is fast, with it is roomy, anti-interference, low in energy consumption the advantages that,
The advantages such as microelectronic technique maturation, High Density Integration, high finished product rate, of low cost can be made full use of again, and development will push
The development of high-performance computer, data communication system of new generation, there is wide market application foreground.
Generally, the core technology of silicon-based optical interconnection is that various optically functional devices are realized in silicon substrate, as silicon substrate laser,
Electrooptic modulator, photodetector, wave filter, wavelength division multiplexer, coupler, optical splitter etc..And realize these function elements
Basic structure or basic device are Si Based Optical Waveguide Structures.
However, the structure needs stringent phase-matching condition to reach Mode Coupling and conversion, so the structure is to wave
Long and technique is sensitive, and bandwidth of operation is small, limits this structure in PSR (polarization splitter-rotator, polarization
Beam splitting circulator) etc. in application.The features such as size being had based on the structure is small, high efficiency, and CMOS technology is compatible with, Ke Yi
It is improved in this structure, to achieve the effect that increase bandwidth of operation.
Therefore it provides a kind of curved waveguide structure and the polarization beam splitting circulator based on it, to solve prior art medium wave
Guide structure is necessary the problems such as sensitivity such as wavelength and technique and small bandwidth of operation.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of curved waveguide structure, preparations
And the polarization beam splitting circulator based on the curved waveguide structure, for solve in the prior art waveguiding structure to wavelength and technique
Etc. sensitivities, the problems such as bandwidth of operation is small.
In order to achieve the above objects and other related objects, the present invention provides a kind of curved waveguide structure, including：
Substrate；
First wave guide, bending are set on the substrate, and the first wave guide includes the first coupled zone；And
Second waveguide, bending are set on the substrate, and the second waveguide includes what is coupled with first coupled zone
Second coupled zone, and there is default spacing between the second waveguide and the first wave guide, wherein, the second coupled zone packet
Lower part waveguide and the upper waveguide above the lower part waveguide are included, the lower part waveguide and the section of the upper waveguide are wide
Degree is different.
As a preferred embodiment of the present invention, the cross sectional shape of second coupled zone includes stairstepping, it is described on
The cross-sectional width of portion's waveguide is less than the cross-sectional width of the lower part waveguide.
Preferably, along the length direction of second coupled zone, the cross-sectional width at the upper waveguide both ends is different, institute
The cross-sectional width for stating lower part waveguide both ends is different.
Preferably, the lower part waveguide has first thickness, first end width and the second end width, the top wave
It leads to correspond to and there is second thickness, third end portion width and the 4th end portion width, and the second end width is less than described first
End portion width, the 4th end portion width are more than the third end portion width.
Preferably, the second thickness is more than the first thickness.
Preferably, in the second waveguide, from the first end width of the lower part waveguide to the second end
Cross-sectional width continuous transition at portion's width, it is wide to the 4th end from the third end portion width of the upper waveguide
Cross-sectional width continuous transition at degree.
Preferably, the first thickness is between 0.14 μm~0.16 μm, the second thickness between 0.33 μm~
Between 0.35 μm, the first end width is between 0.44 μm~0.46 μm, and the second end width is between 0.32 μm
Between~0.35 μm, the third end portion width is between 0.22 μm~0.24 μm, and the 4th end portion width is between 0.27 μ
Between m~0.29 μm.
Preferably, the second waveguide is identical with the thickness of the first wave guide；The section of at least described second coupled zone
Width is less than the cross-sectional width of first coupled zone.
Preferably, the thickness of the first wave guide and the second waveguide is between 0.33 μm~0.36 μm；It is described
Spacing between first wave guide and the second waveguide is between 0.19 μm~0.21 μm；The cross-sectional width of the first wave guide
Between 0.39 μm~0.41 μm.
Preferably, the first coupled zone of the first wave guide and the second coupled zone of the second waveguide have identical curved
Angle, and the second waveguide is located at the periphery of the first wave guide.
As a preferred embodiment of the present invention, the first wave guide further includes the first incidence zone and the first outgoing area, institute
It states the both ends of the first incidence zone and the first outgoing area respectively with first coupled zone to be connected, the second waveguide corresponds to
Including the second incidence zone and the second outgoing area, second incidence zone and the second outgoing area correspond to and second coupling respectively
The both ends for closing area are connected.
Preferably, the second incidence zone bending setting, and second incidence zone has not with first incidence zone
Same bending curvature；The distance between the exit portal in the first outgoing area and the exit portal in the described second outgoing area are more than described
Default spacing.
As a preferred embodiment of the present invention, the substrate includes bottom silicon layer and positioned at the bottom silicon upper surface
Silicon oxide layer, the material of the first wave guide includes silicon, and the material of the second waveguide includes silicon.
The present invention also provides a kind of preparation methods of curved waveguide structure, include the following steps：
1) SOI substrate is provided, the SOI substrate includes bottom silicon, oxygen buried layer and top layer silicon；
2) first time etching is carried out to the top layer silicon, to form the upper waveguide of second waveguide and be correspondingly formed part
First wave guide；And
3) it carries out second to the top layer silicon to etch, to form complete described second positioned at the oxygen buried layer surface
Waveguide and the complete first wave guide, wherein, the first wave guide and the second waveguide are bent setting, and described first
Waveguide includes the first coupled zone, and the second waveguide includes the second coupled zone for being coupled with first coupled zone, and described second
There is default spacing, and second coupled zone includes lower part waveguide and positioned at the lower part between waveguide and the first wave guide
The upper waveguide above waveguide, the lower part waveguide are different from the cross-sectional width of the upper waveguide.
The present invention also provides a kind of polarization beam splitting circulator, wherein, the polarization beam splitting circulator is included as above-mentioned arbitrary
Curved waveguide structure described in one scheme.
As described above, the curved waveguide structure of the present invention, preparation and the polarization beam splitting based on the curved waveguide structure
Circulator has the advantages that：Curved waveguide structure provided by the invention, by improving the structure of external waveguide, whole
The design of unsymmetric structure is introduced in bulk wave guide structure so that the both ends of the coupled zone of external waveguide and be respectively provided with not up and down
Same sectional dimension, asymmetry design have the function of to increase bandwidth solve the sensitive to wavelength of existing waveguiding structure
Problem has further widened the practical application of curved waveguide structure.
Description of the drawings
Fig. 1 is shown as the schematic top plan view of curved waveguide structure provided by the invention.
Fig. 2 is shown as the stereogram of curved waveguide structure provided by the invention.
Fig. 3 (a) is shown as the partial schematic diagram of the second coupled zone of curved waveguide structure provided by the invention.
Fig. 3 (b) is shown as the amplification at A ends in Fig. 3 (a) in the second coupled zone of curved waveguide structure provided by the invention
Figure.
Fig. 3 (c) is shown as the amplification at B ends in Fig. 3 (a) in the second coupled zone of curved waveguide structure provided by the invention
Figure.
Fig. 4 is shown as the sectional view at A ends in Fig. 3 (a) in the second coupled zone of curved waveguide structure provided by the invention.
Fig. 5 is shown as the sectional view at B ends in Fig. 3 (a) in the second coupled zone of curved waveguide structure provided by the invention.
Fig. 6 is shown as providing the structure diagram of SOI substrate in prepared by curved waveguide structure provided by the invention.
Fig. 7 is shown as being formed the structure diagram of mask layer in prepared by curved waveguide structure provided by the invention.
Fig. 8 is shown as carrying out the structural representation obtained after first time etching in prepared by curved waveguide structure provided by the invention
Figure.
Fig. 9 is shown as carrying out second the structural representation obtained after etching in prepared by curved waveguide structure provided by the invention
Figure.
Figure 10 is shown as the PSR simulation result schematic diagrams of first embodiment of the present invention structure.
Figure 11 is shown as the PSR simulation result schematic diagrams of second embodiment of the present invention structure.
Component label instructions
100 bottom silicon
101 oxygen buried layers
102 top layer silicons
103 mask layers
104 first time etching structure layers
11 first wave guides
111 first coupled zones
112 first incidence zones
113 first outgoing areas
21 second waveguides
211 second coupled zones
2111 upper waveguides
2112 lower part waveguides
212 second incidence zones
213 second outgoing areas
31 substrates
311 bottom silicon layers
312 silicon oxide layers
41 top coverings
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Figure 11.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout form may also be increasingly complex.
As shown in Fig. 1~11, the present invention provides a kind of curved waveguide structure, and the curved waveguide structure includes：
Substrate 31；
First wave guide 11, bending are set on the substrate 31, and the first wave guide 11 includes the first coupled zone 111；With
And
Second waveguide 21, bending are set on the substrate 31, and the second waveguide 21 includes and first coupled zone
Second coupled zone 211 of 111 couplings, and there is spacing between the second waveguide 21 and the first wave guide 11, wherein, it is described
Second coupled zone 211 includes lower part waveguide 2112 and the upper waveguide 2111 above the lower part waveguide 2112, under described
Portion's waveguide 2112 is different from the cross-sectional width of the upper waveguide 2112.
As an example, the cross sectional shape of second coupled zone 211 includes stairstepping, the upper waveguide 2111 is cut
Face width is less than the cross-sectional width of the lower part waveguide 2112.
As an example, along the length direction of second coupled zone 211, the section at 2111 both ends of upper waveguide is wide
Degree is different, and the cross-sectional width at 2112 both ends of lower part waveguide is different.
Specifically, the present invention provides a kind of curved waveguide structure, including first wave guide 11 and the second coupled wave
21 are led, the two is respectively provided with the coupled zone of interaction, i.e., described first coupled zone 111 and second coupled zone 211, the present invention
Cross-sectional width in middle setting second waveguide 21 is different, wherein, the cross-sectional width refers to along perpendicular to 31 surface of substrate
Vertical plane in, the sectional view of the second waveguide intercepted, with reference to shown in figure 4 and Fig. 5, cross-sectional width difference refers to
Along along the length direction of second coupled zone, there is difference in the cross-sectional width of each position, to form asymmetric design, this
In invention, second coupled zone 211 of the second waveguide 21 is at least wrapped on the direction on 31 surface of substrate
Lower part waveguide 2112 and upper waveguide 2111 are included, in a preferred embodiment, only including this two parts, the upper waveguide
2111 are located at the surface of the lower part waveguide 2112, so as to simplify technique, to be applicable in the preparation process processing procedure of device,
In, the lower part waveguide 2112 is different from the cross-sectional width of the upper waveguide 2112, refers to second in the second waveguide
In the section of 211 a certain position of coupled zone, cross-sectional width and the lower part waveguide of the upper waveguide 2111 on upper and lower corresponding position
2112 cross-sectional width is different.
Further, the cross sectional shape of each position of the second coupled zone 211 of the second waveguide 21 is designed as ladder
Type, up and down with different width, and the cross-sectional width for further designing the both ends of the surface of the upper waveguide 2111 differ and
The cross-sectional width of the both ends of the surface of the lower part waveguide 2112 differs, non-right based on this so as to form asymmetric second coupled zone
The structure design of title property, break the symmetry of waveguide cross-section is coupled with implementation pattern, can increase the band of entire waveguiding structure
Width, solve in the prior art waveguiding structure to sensitive issues such as wavelength and techniques.In addition, the curved waveguide knot of the present invention
Structure area occupied is smaller, and size can be at 10 μm * 10 μm, and have higher working efficiency, CMOS technology compatibility.
Wherein, curved waveguide structure working principle is as follows：When meeting phase-matching condition, optical path length is equal i.e.：
OPL=N1k0R1θ=N2k0R2θ；Wherein, θ be bent angle (shown in Figure 1), k0It is wave number, N1It is internal curved waveguide (such as Fig. 1
Middle first wave guide) in TM patterns effective refractive index, N2It is the TE patterns in outer bend waveguide (second waveguide in such as Fig. 1)
Effective refractive index, R1And R2Respectively internal curved waveguide and the radius of outer bend waveguide, wherein, with reference to shown in figure 4 and Fig. 5,
N1It is related to the cross-sectional width (W5), thickness (D3) and wavelength of internal curved waveguide, it can be used by these three parameters
Lumerical mode solution simulation softwares calculate specific N1Value, and N2With the cross-sectional width of outer bend waveguide
(W1, W2, W3, W4), thickness (D1, D2) are related to wavelength, can be equally calculated by simulation software, asymmetric when having carried out
After design, the N in formula2And R2It can change, above-mentioned formula can be met under more different wavelength, to reach TM patterns
The effect of TE patterns is converted to, the characteristic with increase bandwidth.
As an example, the lower part waveguide 2112 has first thickness D1, first end width 211a (W1) and second end
Portion width 211b (W2), the upper waveguide 2111, which corresponds to, has second thickness D2, third end portion width 211c (W3) and the 4th
End portion width 211d (W4), and the second end width 211b (W2) is less than the first end width 211a (W1), it is described
4th end portion width 211d (W4) more than the third end portion width 211c (W3), wherein, 211a~211d represents different end
Portion position, W1~W4 represent different cross-sectional widths.
As an example, the second thickness D2 is more than the first thickness D1.
As an example, 21 in the second waveguide, from the first end width 211a of the lower part waveguide 2112
(W1) to the cross-sectional width continuous transition at the second end width 211b (W2) at, from described in the upper waveguide 2111
To the cross-sectional width continuous transition at the 4th end portion width 211d (W4) at third end portion width 211c (W3).
As an example, the first thickness D1, between 0.14 μm~0.16 μm, the second thickness D2 is between 0.33 μ
Between m~0.35 μm, the first end width 211a (W1) is between 0.44 μm~0.46 μm, the second end width
211b (W2) between 0.32 μm~0.35 μm, the third end portion width 211c (W3) between 0.22 μm~0.24 μm it
Between, between 0.27 μm~0.29 μm, each width can be realized the 4th end portion width 211d (W4) according to litho pattern.
Specifically, in this example, a kind of specific design of second waveguide 21 is provided, wherein, the upper waveguide 2111
Third end 211c and the first end 211a of the lower part waveguide 2112 are correspondingly arranged up and down, the upper waveguide 2111
The 4th end 211d and the lower part waveguide 2112 the second end 211b up and down be correspondingly arranged, and further preferably satisfy from
The smaller one end of width is continuously excessive to the larger one end of width, and the upper waveguide is from third end to the 4th end portion width
Gradually increase, corresponding up and down therewith, the lower part waveguide is from first end corresponding with third end as the 4th end pair
The second end answered is gradually reduced, so as to realize that bandwidth increases, and is further ensured that the transmission stability of device.Such as Fig. 3
Shown, Fig. 3 (b) and Fig. 3 (c) respectively illustrate the vertical view at the second coupled zone both ends, are only to show both ends different in width
Simplified diagram.
As an example, the second waveguide 21 is identical with the thickness of the first wave guide 11, thickness herein refers to vertically
In on the direction of the substrate 31, the overall thickness up and down of the first wave guide and the overall thickness up and down of the second waveguide.
As an example, the section that the cross-sectional width of at least described second coupled zone 211 is less than first coupled zone 111 is wide
Degree.
As an example, the thickness of the first wave guide 11 and the second waveguide 21 between 0.33 μm~0.36 μm it
Between；Spacing between the first wave guide 11 and the second waveguide 21 is between 0.19 μm~0.21 μm；The first wave
11 cross-sectional width is led between 0.39 μm~0.41 μm.
Specifically, in this example, the sum of total thickness D1 of the second waveguide 21 and D2 and the first wave guide 11
Thickness D3 it is equal, furthermore it is preferred that the cross-sectional width of at least described second coupled zone 211 be less than first coupled zone 111
Cross-sectional width, refer to first coupled zone of the first wave guide 11 and second coupled zone of the second waveguide 21
The cross-sectional width of the position of corresponding coupling, the former is all higher than the latter, i.e., more than the latter's maximum width, for example, when second coupling
When closing the section in area 211 in up-small and down-big step type, 111 cross-sectional width of the first coupled zone is more than the described of corresponding position
The cross-sectional width of the larger-size lower part waveguide in second coupled zone 211.
As an example, the first coupled zone 111 of the first wave guide 11 and the second coupled zone 211 of the second waveguide 21
With identical bent angle θ, and the second waveguide 21 is located at the periphery of the first wave guide 11.
Specifically, bent angle θ refers to the angle corresponding to the curved waveguide part in Fig. 1, i.e. angle corresponding to coupled zone
It spends, 90 ° of selected as in this example, additionally, it is preferred that waveguiding structure of the second waveguide 21 as outside, wherein, input signal
(TE/TM) it is inputted from inner waveguide, completes coupling in entire waveguiding structure, final a part of signal (TE) is from inner waveguide
The other end exports, and another part signal (TE) is exported from external waveguide, and external waveguiding structure is improved, so as into one
Step is conducive to increase the design of integrally-built bandwidth, ensures the stability of device.
As an example, the first wave guide 11 further includes the first incidence zone 112 and the first outgoing area 113, described first enters
It penetrates the both ends of area 112 and the first outgoing area 113 respectively with first coupled zone 111 to be connected, the second waveguide 21
Corresponding to include the second incidence zone 212 and the second outgoing area 213, second incidence zone 212 and the second outgoing area 213 are distinguished
Correspondence is connected with the both ends of second coupled zone 211.
As an example, the bending of the second incidence zone 212 setting, and second incidence zone 212 and the described first incidence
Area 112 has different bending curvatures；The exit portal in the first outgoing area 113 and the exit portal in the described second outgoing area 213
The distance between be more than the default spacing.
Specifically, in this example, as shown in Figure 1, the first wave guide 11 includes mutually interconnecting successively from signal incidence end
The first incidence zone 112, the first coupled zone 111 and the first outgoing area 113 connect, corresponding, the second waveguide 21 is wrapped successively
The second incidence zone 212, the second coupled zone 211 and the second outgoing area 213 of interconnection are included, when the light of TE patterns is from described the
When one incidence zone 112 is incident, transmitted in internal curved waveguide (first wave guide 11), finally in te mode from described first
Outgoing area 113 exports；When the light of TM patterns is incident from first incidence zone 112, when meeting phase-matching condition, from inside
Curved waveguide is converted to the TE patterns in outer bend waveguide (second waveguide 21) with TM patterns, finally in external bending wave
It is exported in te mode from the described second outgoing area 213 in leading.
In addition, as shown in Figure 1, at for signal incidence end position, it is in flexuosity to set second incidence zone 212,
And the flexuosity has different curvature, the flexuosity and described first from the flexuosity of second coupled zone 211
The flexuosity of incidence zone 112 has different curvature, and second incidence zone 212 is to far from first incidence zone 112
Location bending, so as to eliminate Mode Coupling loss and radiation loss, in addition, at this time first incidence zone 112 preferably with
First coupled zone 111 has identical bending curvature；For the position of signal outgoing, further preferably so that described first
It is emitted area 113 and is emitted area 213 far from described second, at this time so that the first outgoing area 113 and first coupled zone 111
Bending curvature it is different, the second outgoing area 213 is identical with the bending curvature of second coupled zone 211, and described first goes out
It penetrates area 113 to the position far from the described second outgoing area 213 to deviate so that the spacing between exit portal position is more than the first coupled zone
111 and the second default spacing between coupled zone 211, so as to prevent being interfered between emergent light.Further, ensure wave
The width in each area is led so as to meet in service band low-loss transmission.
As an example, the substrate 31 includes bottom silicon 311 and the silicon oxide layer positioned at 311 upper surface of bottom silicon
312, the material of the first wave guide 11 includes silicon, and the material of the second waveguide 11 includes silicon.
Specifically, as shown in Fig. 2, in this example, the substrate 31 includes being made of silicon material layer and silica material layer
Laminated construction, can be wrapped selected from the bottom two layers in SOI substrate structure, the first wave guide 11 and the second waveguide 21
Silicon materials are included, further, also set up silicon oxide layer structure sheaf as top covering 41, certainly, the substrate and the first wave guide
Arbitrary other materials well known to those skilled in the art is can also be with the material of the second waveguide, does not do specific limit herein
It makes, in this example, silica may be used as top covering in the design of asymmetry curved waveguide structure, solves air conduct
Top covering and most of CMOS backend process are incompatible, it is difficult to and other active devices the defects of integrating and supreme
Covering protective value is also relatively vulnerable to the problem of influence of chip external environment.
As shown in Fig. 6~9, the present invention also provides a kind of preparation method of curved waveguide structure, wherein, the preparation method
The preferably preparation method of the curved waveguide structure of the present embodiment, includes the following steps：
1) SOI substrate is provided, the SOI substrate includes bottom silicon 100, oxygen buried layer 101 and top layer silicon 102, such as Fig. 6 institutes
Show；
2) first time etching is carried out to the top layer silicon 102, to form the upper waveguide 2111 of second waveguide 21 and right
Part first wave guide 11 should be formed, as shown in Figures 7 and 8；And
3) it carries out second to the top layer silicon 102 to etch, to form the complete institute positioned at 102 surface of oxygen buried layer
Second waveguide 21 and the complete first wave guide 11 are stated, wherein, the first wave guide 11 and the second waveguide 21 are curved
Song setting, the first wave guide 11 include the first coupled zone 111, and the second waveguide 21 includes and first coupled zone 111
Second coupled zone 211 of coupling has default spacing, and described second between the second waveguide 21 and the first wave guide 11
Coupled zone 211 includes lower part waveguide 2112 and the upper waveguide 2111 above the lower part waveguide 2112, under described
Portion's waveguide 2112 is different from the cross-sectional width of the upper waveguide 2111, as shown in Figure 9.
Specifically, the present invention also provides a kind of preparation method for preparing curved waveguide structure provided by the present invention, first
A SOI substrate is preferably provided, in addition, during Fig. 7 and progress first time etching shown in Fig. 8, it can also be first described
The upper surface of top layer silicon 102 forms one layer of silicon oxide layer, then etches the top layer silicon 102 based on the mask layer 103, described to cover
Film layer 103 includes photoresist layer, after first time etches, obtains the upper waveguide in the second coupled zone of second waveguide, foundation
Pattern etching after second etches, obtains lower part waveguide, further obtains complete first wave guide 11 and second waveguide
21.Certainly, it performs etching and prepares the technique of curved waveguide structure and technology well known within the skill of those ordinarily skilled can be used obtain,
Its design parameter and actual demand setting, are not particularly limited herein.
The present invention also provides a kind of polarization beam splitting circulator, the polarization beam splitting circulator includes such as above-mentioned any one side
Curved waveguide structure described in case so as to have the characteristic of larger bandwidth based on the curved waveguide, can obtain larger
Bandwidth of operation.
In addition, the advantageous effect of curved waveguide structure provided in order to further illustrate the present invention, provides two specifically in fact
Example is applied, wherein, in first embodiment structure, the thickness of first wave guide is 0.34 μm, and the cross-sectional width of first wave guide is 0.4 μm,
Second waveguide is in forge piece of step type structure, and the cross-sectional width at upper waveguide both ends is equal, is 0.295 μm, lower part waveguide both ends
Cross-sectional width it is equal, be 0.335 μm, the overall thickness of second waveguide is 0.34 μm, and the thickness of lower part waveguide is 0.15 μm；The
In two example structures, the thickness of first wave guide is 0.34 μm, and the cross-sectional width of first wave guide is 0.4 μm, and second waveguide is in rank
Trapezoidal-structure, the cross-sectional width at upper waveguide both ends differ, and one end cross-sectional width is 0.23 μm, and other end cross-sectional width is
0.28 μm, the cross-sectional width at lower part waveguide both ends differs, and one end cross-sectional width is 0.447 μm (0.23 μm with upper waveguide
It is corresponding), other end cross-sectional width is 0.335 μm (corresponding with 0.28 μm of upper waveguide), and the overall thickness of second waveguide is 0.34 μ
M, the thickness of lower part waveguide is 0.15 μm, wherein, the middle structure of first embodiment is compared with the structure in second embodiment, and second
The size (cross-sectional width) of the both ends of the surface of the waveguide of waveguiding structure middle and upper part and lower part waveguide has carried out asymmetric design.
As shown in Figures 10 and 11, in the structure of first embodiment, wavelength of the efficiency of transmission more than 90% is between 1382nm
~1435nm；Wavelength of the efficiency of transmission more than 80% is between 1357nm~1453nm；In the structure of second embodiment, efficiency of transmission
More than 90% between 1383nm~1484nm；Wavelength of the efficiency of transmission more than 80% is between 1348nm~1509nm.So as to
See, two kinds of structures are all to start to reach efficiency more than 90% in the wavelength of 1382nm, carry out second embodiment structure improvement it
Afterwards, bandwidth of the efficiency of transmission more than 90% increases to 101nm by 53nm；Equally, after the improvement for carrying out second embodiment structure,
Bandwidth of the efficiency of transmission more than 80% increases to 161nm by 96nm.
In conclusion the present invention provides a kind of curved waveguide structure, preparation method and based on the curved waveguide structure
Polarization beam splitting circulator, the curved waveguide structure include：Substrate；First wave guide, bending are set on the substrate, and described the
One waveguide includes the first coupled zone；And second waveguide, bending be set on the substrate, the second waveguide include with it is described
Second coupled zone of the first coupled zone coupling, and there is default spacing between the second waveguide and the first wave guide, wherein,
Second coupled zone include lower part waveguide and the upper waveguide above the lower part waveguide, the lower part waveguide with it is described
The cross-sectional width of upper waveguide is different.Through the above scheme, the present invention provides a kind of curved waveguide structure, by improving external wave
The structure led introduces unsymmetric structure in whole waveguiding structure so that the both ends of the coupled zone of external waveguide and up and down
Be respectively provided with different sizes, the asymmetry design have the function of increase bandwidth, and solve existing waveguiding structure to wave
Long tender subject has further widened the application of curved waveguide structure.So the present invention effectively overcomes of the prior art kind
It plants shortcoming and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (15)
1. a kind of curved waveguide structure, which is characterized in that the curved waveguide structure includes：
Substrate；
First wave guide, bending are set on the substrate, and the first wave guide includes the first coupled zone；And
Second waveguide, bending are set on the substrate, and the second waveguide includes coupled with first coupled zone second
Coupled zone, and there is default spacing between the second waveguide and the first wave guide, second coupled zone includes lower part wave
It leads and the upper waveguide above the lower part waveguide, the lower part waveguide is different from the cross-sectional width of the upper waveguide.
2. curved waveguide structure according to claim 1, which is characterized in that the cross sectional shape of second coupled zone includes
Stairstepping, the cross-sectional width of the upper waveguide are less than the cross-sectional width of the lower part waveguide.
3. curved waveguide structure according to claim 1 or 2, which is characterized in that along the length side of second coupled zone
Upwards, the cross-sectional width at the upper waveguide both ends is different, and the cross-sectional width at the lower part waveguide both ends is different.
4. curved waveguide structure according to claim 3, which is characterized in that the lower part waveguide has first thickness, the
One end width and the second end width, the upper waveguide, which corresponds to, has second thickness, third end portion width and the 4th end
Width, and the second end width is less than the first end width, the 4th end portion width is more than the third end
Width.
5. curved waveguide structure according to claim 4, which is characterized in that it is thick that the second thickness is more than described first
Degree.
6. curved waveguide structure according to claim 3, which is characterized in that in the second waveguide, from the first end
To the cross-sectional width continuous transition at the second end width at portion's width, from the third end portion width to the described 4th
Cross-sectional width continuous transition at end portion width.
7. curved waveguide structure according to claim 6, which is characterized in that the first thickness is between 0.14 μm~0.16
Between μm, the second thickness is between 0.33 μm~0.35 μm, and the first end width is between 0.44 μm~0.46 μm
Between, the second end width is between 0.32 μm~0.35 μm, and the third end portion width is between 0.22 μm~0.24 μ
Between m, the 4th end portion width is between 0.27 μm~0.29 μm.
8. curved waveguide structure according to claim 1, which is characterized in that the second waveguide and the first wave guide
Thickness is identical；The cross-sectional width of second coupled zone is less than the cross-sectional width of first coupled zone.
9. curved waveguide structure according to claim 8, which is characterized in that the first wave guide and the second waveguide
Thickness is between 0.33 μm~0.36 μm；Spacing between the first wave guide and the second waveguide between 0.19 μm~
Between 0.21 μm；The cross-sectional width of the first wave guide is between 0.39 μm~0.41 μm.
10. curved waveguide structure according to claim 1, which is characterized in that the first coupled zone of the first wave guide with
Second coupled zone of the second waveguide has identical bent angle, and the second waveguide is located at the periphery of the first wave guide.
11. curved waveguide structure according to claim 1, which is characterized in that the first wave guide further includes the first incidence
Area and the first outgoing area, the both ends of first incidence zone and the first outgoing area respectively with first coupled zone are connected
It connects, the second waveguide correspondence includes the second incidence zone and the second outgoing area, second incidence zone and the second outgoing area
Correspondence is connected with the both ends of second coupled zone respectively.
12. curved waveguide structure according to claim 11, which is characterized in that the second incidence zone bending setting, and
Second incidence zone has different bending curvatures from first incidence zone；It is described first outgoing area exit portal with it is described
The distance between the exit portal in the second outgoing area is more than the default spacing.
13. curved waveguide structure according to claim 1, which is characterized in that the substrate includes bottom silicon layer and position
Silicon oxide layer in the bottom silicon upper surface, the material of the first wave guide include silicon, and the material of the second waveguide includes
Silicon.
14. a kind of polarization beam splitting circulator, which is characterized in that the polarization beam splitting circulator is included as in claim 1~13
Curved waveguide structure described in any one.
15. a kind of preparation method of curved waveguide structure, which is characterized in that include the following steps：
1) SOI substrate is provided, the SOI substrate includes bottom silicon, oxygen buried layer and top layer silicon；
2) first time etching is carried out to the top layer silicon, to form the upper waveguide of second waveguide and be correspondingly formed part first
Waveguide；And
3) it carries out second to the top layer silicon to etch, to form the complete second waveguide positioned at the oxygen buried layer surface
And the complete first wave guide, wherein, the first wave guide and the second waveguide are bent setting, the first wave guide
Including the first coupled zone, the second waveguide includes the second coupled zone coupled with first coupled zone, the second waveguide
There is default spacing between the first wave guide, and second coupled zone includes lower part waveguide and positioned at the lower part waveguide
The upper waveguide of top, the lower part waveguide are different from the cross-sectional width of the upper waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218999.5A CN108227075A (en) | 2018-03-16 | 2018-03-16 | Curved waveguide structure and polarization beam splitting circulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218999.5A CN108227075A (en) | 2018-03-16 | 2018-03-16 | Curved waveguide structure and polarization beam splitting circulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108227075A true CN108227075A (en) | 2018-06-29 |
Family
ID=62658652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810218999.5A Pending CN108227075A (en) | 2018-03-16 | 2018-03-16 | Curved waveguide structure and polarization beam splitting circulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108227075A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338028A (en) * | 2020-03-25 | 2020-06-26 | 南通赛勒光电科技有限公司 | Novel silicon fundamental wave division multiplexer structure |
| CN113189708A (en) * | 2021-07-01 | 2021-07-30 | 西安奇芯光电科技有限公司 | Polarization insensitive directional coupler structure and method |
| CN115016059A (en) * | 2022-08-09 | 2022-09-06 | 上海羲禾科技有限公司 | Wavelength division multiplexing device, wavelength division demultiplexing device and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070058896A1 (en) * | 2003-03-19 | 2007-03-15 | Nippon Telegraph And Telephone Corporation | Optical switch, optical modulator and variable wavelength filter |
| CN104252020A (en) * | 2013-06-27 | 2014-12-31 | 株式会社藤仓 | Polarization conversion device |
| CN204302526U (en) * | 2014-12-26 | 2015-04-29 | 江苏尚飞光电科技有限公司 | Polarization beam splitting circulator |
| WO2015096070A1 (en) * | 2013-12-25 | 2015-07-02 | 华为技术有限公司 | Waveguide polarization splitter and polarization rotator |
| CN204536588U (en) * | 2015-01-21 | 2015-08-05 | 江苏尚飞光电科技有限公司 | Polarization beam splitting spinner |
| CN105223647A (en) * | 2015-11-04 | 2016-01-06 | 江苏尚飞光电科技有限公司 | A kind of polarization beam splitting spinner and method for designing thereof |
| US20170023735A1 (en) * | 2015-07-24 | 2017-01-26 | International Business Machines Corporation | Rebalanced adiabatic optical polarization splitter |
| US20170068048A1 (en) * | 2014-03-05 | 2017-03-09 | Nippon Telegraph And Telephone Corporation | Polarization rotator |
| WO2017169922A1 (en) * | 2016-03-28 | 2017-10-05 | 日本電気株式会社 | Polarization beam splitter |
| CN208110093U (en) * | 2018-03-16 | 2018-11-16 | 中国科学院上海微系统与信息技术研究所 | Curved waveguide structure and polarization beam splitting rotator |
-
2018
- 2018-03-16 CN CN201810218999.5A patent/CN108227075A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070058896A1 (en) * | 2003-03-19 | 2007-03-15 | Nippon Telegraph And Telephone Corporation | Optical switch, optical modulator and variable wavelength filter |
| CN104252020A (en) * | 2013-06-27 | 2014-12-31 | 株式会社藤仓 | Polarization conversion device |
| WO2015096070A1 (en) * | 2013-12-25 | 2015-07-02 | 华为技术有限公司 | Waveguide polarization splitter and polarization rotator |
| US20170068048A1 (en) * | 2014-03-05 | 2017-03-09 | Nippon Telegraph And Telephone Corporation | Polarization rotator |
| CN204302526U (en) * | 2014-12-26 | 2015-04-29 | 江苏尚飞光电科技有限公司 | Polarization beam splitting circulator |
| CN204536588U (en) * | 2015-01-21 | 2015-08-05 | 江苏尚飞光电科技有限公司 | Polarization beam splitting spinner |
| US20170023735A1 (en) * | 2015-07-24 | 2017-01-26 | International Business Machines Corporation | Rebalanced adiabatic optical polarization splitter |
| CN105223647A (en) * | 2015-11-04 | 2016-01-06 | 江苏尚飞光电科技有限公司 | A kind of polarization beam splitting spinner and method for designing thereof |
| WO2017169922A1 (en) * | 2016-03-28 | 2017-10-05 | 日本電気株式会社 | Polarization beam splitter |
| CN208110093U (en) * | 2018-03-16 | 2018-11-16 | 中国科学院上海微系统与信息技术研究所 | Curved waveguide structure and polarization beam splitting rotator |
Non-Patent Citations (5)
| Title |
|---|
| HANG GUAN等: "High-Efficiency Biwavelength Polarization Splitter-Rotator on the SOI Platform", 《IEEE PHOTONICS TECHNOLOGY LETTERS》, vol. 27, no. 5, XP011572946, DOI: 10.1109/LPT.2014.2384451 * |
| KANG TAN等: "Compact highly-efficient polarization splitter and rotator based on 90° bends", 《OPTICS EXPRESS》, vol. 24, no. 13, pages 14506 - 14512 * |
| KANG TAN等: "Experimental realization of an O-band compact polarization splitter and rotator", 《OPTICS EXPRESS》, vol. 25, no. 4 * |
| XIN CHEN 等: "Design of an ultra-broadband and fabrication-tolerant silicon polarization rotator splitter with SiO 2 top cladding", 《CHINESE OPTICS LETTERS》 * |
| YULE XIONG等: "Fabrication tolerant and broadband polarization splitter and rotator based on a taper-etched directional coupler", 《OPTICS EXPRESS》, vol. 22, no. 14 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338028A (en) * | 2020-03-25 | 2020-06-26 | 南通赛勒光电科技有限公司 | Novel silicon fundamental wave division multiplexer structure |
| CN113189708A (en) * | 2021-07-01 | 2021-07-30 | 西安奇芯光电科技有限公司 | Polarization insensitive directional coupler structure and method |
| CN115016059A (en) * | 2022-08-09 | 2022-09-06 | 上海羲禾科技有限公司 | Wavelength division multiplexing device, wavelength division demultiplexing device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9274283B1 (en) | Silicon photonics alignment tolerant vertical grating couplers | |
| CN204536588U (en) | Polarization beam splitting spinner | |
| CN204302526U (en) | Polarization beam splitting circulator | |
| CN108227075A (en) | Curved waveguide structure and polarization beam splitting circulator | |
| CN106646783A (en) | Silicon-based WDM optical transceiver module | |
| CN108983352B (en) | End face coupler and preparation method thereof | |
| JP2531634B2 (en) | Optical multiplexer / demultiplexer | |
| CN106461865A (en) | Grating coupler and manufacturing method therefor | |
| CN104765102A (en) | Packaging structure for silicon photon chip | |
| CN105336795B (en) | Photon chip packaging structure based on grating interface, and manufacturing method for photon chip packaging structure | |
| CN206848526U (en) | Silicon substrate WDM optical transceiver modules | |
| US20180095199A1 (en) | Grating Coupler and Preparation Method | |
| CN105759357A (en) | Compact mode order converter based on groove type waveguides | |
| CN107533197A (en) | A kind of polarization rotator and optical signal processing method | |
| JP2003014964A (en) | Optical element and light tranceiver and other optical device using the optical element | |
| CN208110093U (en) | Curved waveguide structure and polarization beam splitting rotator | |
| CN108873161A (en) | Si Based Optical Waveguide Structures and preparation method thereof | |
| US20210141251A1 (en) | Active region-less modulator and method | |
| CN204679680U (en) | A kind of encapsulating structure of silicon photon chip | |
| CN113126217B (en) | Optical transmitter-receiver device, preparation method of optical transmitter-receiver device and optical communication equipment | |
| CN107561646A (en) | Optical waveguide polarization separator and its manufacture method | |
| CN105785507A (en) | Polarization beam-splitting rotator | |
| CN109642986A (en) | Resin optical waveguide and composite optical wave guide | |
| CN115657224B (en) | Optical packaging method of silicon photonic chip | |
| JPH1152198A (en) | Optical connecting structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |