CN204188832U - Polarization beam apparatus - Google Patents
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- 230000010287 polarization Effects 0.000 title claims abstract description 64
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000377 silicon dioxide Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
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Abstract
The utility model provides a kind of polarization beam apparatus, described polarization beam apparatus at least comprises: be formed in the waveguide in the top layer silicon of SOI material, described waveguide at least comprises first order y branch waveguide, second level y branch waveguide, third level y branch waveguide, and mode-conversion device; Described second level y branch waveguide comprises the 3rd branch-waveguide and the 4th branch-waveguide; Wherein, described mode-conversion device connects the root waveguide of first order y branch waveguide and the root waveguide of second level y branch waveguide; Described 4th branch-waveguide connects the root waveguide of described third level y branch waveguide; The span of the width S 1 of the root waveguide of described first order y branch waveguide is S1>1 μm.The polarization beam apparatus that the utility model provides has the bandwidth of operation of hundreds of nanometer and comparatively simple processing technology.
Description
Technical field
The utility model relates to a kind of optical device field, particularly relates to a kind of polarization beam apparatus.
Background technology
Along with people are to improving constantly of requiring of information transmission, processing speed with multinuclear calculates the arriving in epoch, the electrical interconnection based on metal will become development bottleneck due to the defect such as overheated, delay, electronic interferences.And adopt light network to replace electrical interconnection, can effectively solve this difficult problem.In the specific embodiments of light network, silicon-based optical interconnection becomes first-selected with its unrivaled cost and technical advantage.Silicon-based optical interconnection can play light network speed fast, be with the advantages such as roomy, anti-interference, low in energy consumption, microelectronic technique maturation, High Density Integration, high finished product rate, the advantage such as with low cost can be made full use of again, its development will promote the development of high-performance computer of new generation, optical communication system, has wide market application foreground.
In the past, the research emphasis of silicon-based optical interconnection mainly realizes various exhibiting optical function device, as silica-based discharge-pumped laser, electrooptic modulator, photodetector, wavelength division multiplex device and mould division multiplexing device etc. on silica-based.Except light network on sheet, other forms of light network inevitably needs to be connected with the external world.Under the technical background of present stage, often adopt optical fiber as externally connecting medium.But on the one hand, the polarization state in optical fiber is random; On the other hand, SOI waveguide has the Refractive Index of Material more much bigger than traditional integrated light guide (as SiO 2 waveguide) poor, makes the effective refractive index difference of TE and TM pattern very large, causes device performance extremely responsive to polarization state.Therefore, if the problem that properly resolver part performance is not Polarization-Sensitive, silicon based photon can only be confined to the research state be not connected with the external world, cannot can realize more complicated device loop or device network as traditional integrated optics, more cannot realize the target that light network substitutes electrical interconnection.Current a solution is the structure for often kind of its polarization insensitive of device specialized designs, but, device under polarization insensitive optimized dimensions is not generally performance the best, and these devices often need special device architecture and complicated technology controlling and process, effect is difficult to ensure; Another solution adopts rectangular waveguide, but this scheme needs precise control of sizes, technique is difficult to realize, and run into coupling, be still Polarization-Sensitive when the configuration such as to bend.
The more effective scheme of one adopts polarity diversity mechanism.The light entering the random polarization of chip from coupling fiber can regard the linear superposition of TE and TM pattern as, and these two orthogonal components, after a polarization beam apparatus (1 × 2 port), export at different ports respectively.And follow-up again after a polarization rotator, same TE pattern can be converted into.Then this two-way light works in the silica-based function element of TE pattern respectively through two, realizes various function and signal transacting.Polarization state is reconfigured by contrary process by light again that export, is received by an other optical fiber at output terminal.Below such mechanism, functional device all works in TE pattern, extraneous polarization state does not affect internal work, therefore significantly reduces the designing requirement to function element, improves the feasibility of silicon based photon device in the field such as light network, optical communication and application prospect significantly.
The core devices of above-mentioned polarity diversity mechanism is polarization beam apparatus.Based on the silica-based polarization beam apparatus of directional coupler, multi-mode interference coupler and Mach-increasing Dare interferometer in the near future theoretical and be experimentally proved to be, but these devices have very strict restriction to duct width and length usually, make device very high to technological requirement, and wavelength sensitive.And comparatively large based on the bandwidth of the polarization beam apparatus of Evolution Modes effect, but its technics comparing is complicated.
The focus that current silicon photon industry is paid close attention to is 100Gb/s coherent light communication transceiver, and this module requires that polarization beam apparatus has the work flow of very large bandwidth, stable process allowance and CMOS technology compatibility.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of polarization beam apparatus, high for the technological requirement solved in prior art existing for polarization beam apparatus, and the problem that bandwidth is narrower.
For achieving the above object and other relevant objects, the utility model provides a kind of polarization beam apparatus, described polarization beam apparatus at least comprises: be formed in the waveguide in the top layer silicon of SOI material, described waveguide at least comprises first order y branch waveguide, second level y branch waveguide, third level y branch waveguide, and mode-conversion device; Described second level y branch waveguide comprises the 3rd branch-waveguide and the 4th branch-waveguide;
Wherein, described mode-conversion device connects the root waveguide of first order y branch waveguide and the root waveguide of second level y branch waveguide; Described 4th branch-waveguide connects the root waveguide of described third level y branch waveguide;
The span of the width S 1 of the root waveguide of described first order y branch waveguide is S1>1 μm.
Preferably, described first order y branch waveguide comprises the first branch-waveguide and the second branch-waveguide, wherein, the width of described second branch-waveguide is greater than the width of described first branch-waveguide, and the span of the width W 1 of described first branch-waveguide is 330nm<W1<490nm.
Preferably, the span of the length L1 of described first order y branch waveguide is L1>100 μm.
Preferably, the span of described first branch-waveguide and the second branch-waveguide distance G1 between one end of the root waveguide away from described first order y branch waveguide is G1>2 μm.
Preferably, the width of described 4th branch-waveguide is greater than the width of described 3rd branch-waveguide, and the span of the width W 3 of described 3rd branch-waveguide is 250nm<W3<310nm.
Preferably, the span of the length L3 of described second level y branch waveguide is L3>100 μm.
Preferably, the span of described 3rd branch-waveguide and the 4th branch-waveguide distance G2 between one end of the root waveguide away from described first order y branch waveguide is G2>2 μm.
Preferably, the width of described 4th branch-waveguide equals the width of the root waveguide of described third level y branch waveguide.
Preferably, described third level y branch waveguide comprises quintafurcation waveguide and the 6th branch-waveguide, the width of described 6th branch-waveguide is greater than the width of described quintafurcation waveguide, and the scope of the width W 4 of described quintafurcation waveguide is 290nm<W4<350nm.
Preferably, described quintafurcation waveguide and the 6th branch-waveguide away from the root waveguide of described third level y branch waveguide two ends between distance G3 be 3 μm of >G3>1 μm.
Preferably, the width at the two ends of described mode-conversion device is identical with the width of the root waveguide of connected first order y branch waveguide or the root waveguide of second level y branch waveguide respectively.
Preferably, the width S 1 of the root waveguide of described first order y branch waveguide is less than or equal to the width S 2 of the root waveguide of described second level y branch waveguide.
Preferably, the scope of the length L2 of described mode-conversion device is 0 μm of <L2<50 μm.
Preferably, the wavelength coverage entering the light of described polarization beam apparatus is 1.25 μm ~ 1.75 μm.
As mentioned above, polarization beam apparatus of the present utility model, has following beneficial effect:
1, because the pattern distribution of Asymmetric Y-Waveguide is exactly broadband, can be operated in up to a hundred in the wavelength coverage of hundreds of nanometers.Three Asymmetric Y-Waveguide cascades are provided in the polarization beam apparatus provided in embodiment of the present utility model, make use of the broadband character of Asymmetric Y-Waveguide, solve the shortcoming of conventional polarization beam splitter bandwidth narrower (conventional polarization beam splitter bandwidth only has tens nanometers usually).
2, the polarization beam apparatus processing technology provided in embodiment of the present utility model is fairly simple, and those skilled in the art all can understand, and the polarization beam apparatus that the utility model provides utilizes conventional CMOS technology just can realize.
Accompanying drawing explanation
Fig. 1 is shown as the schematic diagram of the vertical view of the polarization beam apparatus provided in embodiment of the present utility model.
Fig. 2 is shown as the device cross-section schematic diagram of the polarization beam apparatus shown in Fig. 1 in AA ' position.
Fig. 3 is shown as the device cross-section schematic diagram of the polarization beam apparatus shown in Fig. 1 in BB ' position
Fig. 4 is shown as the device cross-section schematic diagram of the polarization beam apparatus shown in Fig. 1 in CC ' position
Fig. 5 is shown as the device cross-section schematic diagram of the polarization beam apparatus shown in Fig. 1 in DD ' position
Fig. 6 is shown as the device cross-section schematic diagram of the polarization beam apparatus shown in Fig. 1 in EE ' position
Element numbers explanation
| 100 | First order y branch waveguide |
| 101 | Taper mode converter between the first order and second level y branch waveguide |
| 102 | Second level y branch waveguide |
| 103 | TM polarized light output port |
| 104 | 3rd pole y branch waveguide |
| 105 | Silicon dioxide top covering |
| 106 | Silicon dioxide under-clad layer |
| C1 | Silicon dioxide top covering thickness |
| C2 | Silicon dioxide under-clad layer thickness |
| W1 | Width |
| W2 | Width |
| W3 | Width |
| W4 | Width |
| W5 | Width |
| L1 | Length |
| L1 | Length |
| L2 | Length |
| L3 | Length |
| L4 | Length |
| G1 | Interval width |
| G2 | Interval width |
| G3 | Interval width |
| H1 | Thickness |
Embodiment
Below by way of specific instantiation, embodiment of the present utility model is described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present utility model and effect easily.The utility model can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present utility model.
Refer to Fig. 1 to Fig. 6.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present utility model in a schematic way, then only the assembly relevant with the utility model is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Shown in Fig. 6, the polarization beam apparatus provided in the present embodiment is for being formed on SOI material, described waveguides sections (in Fig. 1 label 100,102,103,104 place part) is formed in top layer silicon, the scope of the thickness H1 of top layer silicon is 200nm ~ 500nm, the scope of silicon dioxide top covering 105 thickness C1 1 μm ~ 5 μm, the scope of silicon dioxide under-clad layer 106 thickness C2 is 1 μm ~ 5 μm.Wherein, the thickness H1 of top layer silicon and the value of silicon dioxide under-clad layer C2 are determined by the SOI disk material of all size that market is sold, silicon dioxide top covering 105 is formed by chemical vapor deposition method, and its thickness C1 is according to forming the described chemical vapor deposition method conditional decision of carrying out.
As shown in Figure 1, whole silica-based polarization rotator is divided into four parts, comprise the waveguide in the top layer silicon being formed in SOI material, second level y branch waveguide 102 first order y branch waveguide 100 described waveguide at least comprises by AA ' to BB ', CC ' to DD ', from the third level y branch waveguide 103 DD ' to EE ', and the mode-conversion device 101 between BB ' to CC '.
Described first order y branch waveguide comprises the second branch-waveguide that the first branch-waveguide that width is W1 and width are W2, and described second level y branch waveguide comprises the 4th branch-waveguide that the 3rd branch-waveguide that width is W3 and width are S3; Described third level y branch waveguide comprises the 6th branch-waveguide that quintafurcation waveguide that width is W4 and width are W5.
Described mode-conversion device 101 connects the root waveguide of first order y branch waveguide and the root waveguide of second level y branch waveguide; Width is the root waveguide that described 4th branch-waveguide of S3 connects described third level y branch waveguide.
Concrete, the described polarization beam apparatus that the present embodiment provides is as described below:
Be the first branch-waveguide and second branch-waveguide of first order y branch waveguide between AA ' to BB ' in FIG.First branch-waveguide and the second branch-waveguide initial from AA ' line, as the entrance of whole polarization beam apparatus, converge for root waveguide at BB ' place.The width of the root waveguide of described first order y branch waveguide is S1, and span is S1>1 μm.The span of the width W 1 of described first branch-waveguide is 330nm<W1<490nm.The span of the length L1 of described first order y branch waveguide is L1>100 μm.The span of described first branch-waveguide and the second branch-waveguide distance G1 between one end of the root waveguide away from described first order y branch waveguide is G1>2 μm.
It is described mode-conversion device 101 between the BB ' to CC ' shown in Fig. 1.The width at the two ends of described mode-conversion device is identical with the width of the root waveguide of connected first order y branch waveguide or the root waveguide of second level y branch waveguide respectively.Preferably, the width S 1 of the root waveguide of described first order y branch waveguide is less than or equal to the width S 2 of the root waveguide of described second level y branch waveguide.The scope of the length L2 of described mode-conversion device is 0 μm of <L2<50 μm.The span of the length L3 of described second level y branch waveguide is L3>100 μm.
Be described second level y branch waveguide between the CC ' to DD ' shown in Fig. 1, it comprises the 4th branch-waveguide and the 3rd branch-waveguide of bifurcated from the root waveguide at CC ' place.The width of described 4th branch-waveguide is greater than the width of described 3rd branch-waveguide, and the span of the width W 3 of described 3rd branch-waveguide is 250nm<W3<310nm.The span of described 3rd branch-waveguide and the 4th branch-waveguide distance G2 between one end of the root waveguide away from described first order y branch waveguide is G2>2 μm.
It is described third level y branch waveguide between the DD ' to EE ' shown in Fig. 1, described third level y branch waveguide comprises quintafurcation waveguide and the 6th branch-waveguide, the root waveguide of described third level y branch waveguide connects, then towards quintafurcation waveguide and the 6th branch-waveguide described in described EE ' crotch from the end of described 4th branch-waveguide.The width of described third level y branch waveguide is equal with the width of the root waveguide of described third level y branch waveguide, is S3.The width of described 6th branch-waveguide is greater than the width of described quintafurcation waveguide, and the scope of the width W 4 of described quintafurcation waveguide is 290nm<W4<350nm.Described quintafurcation waveguide and the 6th branch-waveguide away from the root waveguide of described third level y branch waveguide two ends between distance G3 be 3 μm of >G3>1 μm.
In addition, also comprise the extension 103 of described 4th branch-waveguide between described DD ' to EE ', the width of described extension 103 is also W3, and deflection angle is as far as possible little, both not interfere with each other with other branch-waveguide, can keep less device area again.
In the present embodiment, the wavelength coverage entering the light of above-mentioned polarization beam apparatus is 1.25 μm ~ 1.75 μm.Concrete, light is the waveguide incidence of W1 from left to right by width in the first order y branch waveguide (100) AA ' to BB ', mode converter 101 again between BB ' to CC ' and the second level y branch waveguide 102 between CC ' to DD ' are finally that quintafurcation waveguide described in W4 exports from the extension 103 of the 4th branch-waveguide that is W3 of the width DD ' to EE ' and width.
The mode-conversion mechanism of whole device is pattern distribution principle (the concrete reference of the pattern distribution principle based on Asymmetric Y-Waveguide openly paper: the Love based on Asymmetric Y-Waveguide, and N.Riesen, " Single-, Few-, andMultimode Y-Junctions, " J.Lightw.Technol., vol.30, no.3, pp.304 – 309, and N.Riesen Feb.2012., and J.Love, " Design of mode-sorting asymmetric Y-junctions, " Appl.Opt., vol.51, no.15, pp.2778 – 2783, May2012.), when the light of a certain polarization state inputs from branch-waveguide to root waveguide time, always can to export with the immediate pattern of its effective refractive index in root waveguide.Therefore by the width of appropriate design branch-waveguide, can ensure that the polarized light inputted can be coupled into the polarization state that in root waveguide, we require, and by pattern distribution several times, finally realize the function of polarization beam splitting.Otherwise, for the polarized light be input to from root waveguide in branch-waveguide, also can to export with the immediate pattern of input light effective refractive index in a certain branch.
1) first order y branch waveguide 100 between AA ' to BB ':
The width of root waveguide in this region is S1, and it needs at least to support that five patterns are by the waveguide input TE0 polarized light of (these five patterns are TE0, TE1, TM0, TM1, TE2) such guarantee light from the narrower W1 of width, can be converted to TE1; The TM0 polarized light of input, is converted into TM1.If when inputting from wider waveguide W2, TE0 polarized light is bound to the TE0 polarized light be converted in root waveguide, TM0 polarized light is bound to the TM0 polarized light be converted in root waveguide, this is because TE0/TM0 is in W2 waveguide or is the maximum TE/TM pattern of effective refractive index in root waveguide, it is invalid that therefore such pattern is distributed.Input end face as shown in Figure 2, the width arranging the root waveguide of first order y branch waveguide is S1>1 μm, 5 patterns are supported, width 330nm<W1<490nm when can ensure that the wavelength of root waveguide at the light inputted is in 1.25 μm ~ 175 μm.If W1 reduces further, the polarized light of input TE0 can be converted into the TE2 polarized light in root waveguide, because the effective refractive index now both them is more close.Length is L1>100 μm, and Assured Mode transforms enough slow, reduces patten transformation loss.G1 selects to be greater than 2 μm, thus ensures not coupling between input end face two waveguides.
2) the taper mode converter 101 between BB ' to CC ':
If the root duct width S2 of first order y branch waveguide root duct width S1 and second level y branch waveguide is different, low-loss patten transformation the taper mode converter 102 of width gradual change can be connected with the root waveguide of second level y branch waveguide, can be carried out in the waveguide of first order y branch waveguide root.The length L2 of taper mode converter 101 is more than or equal to 0, is less than 50 μm.
3) second level y branch waveguide 102 between CC ' to DD ':
In first order Y branch, correspond to input TE0 and TM0 pattern, export TE1 and TM1.In one's respective area, TE1 is converted to the TE1 pattern of wider S3 waveguide, and TM1 is converted to TM0 pattern in narrower waveguide, export at output port place always.S2 is selected to be greater than or equal to S1 herein.And consider that the width of W3 is between 250nm and 310nm, can ensure that pattern is distributed accurately like this.The length L3>100 μm in this region, ensures enough little patten transformation loss.This sentences root duct width S3=0.73 μm of second level Y branch for example.Described 3rd branch-waveguide and the 4th branch-waveguide distance G2 between one end of the root waveguide away from described first order y branch waveguide selects to be greater than 2 μm, thus ensures not coupling between output waveguide.
4) third level Y branch 104 between DD ' to EE ':
In described first order y branch waveguide and second level y branch waveguide, TM0 pattern outputs to output port to the root waveguide of first order y branch waveguide to mode converter to the root waveguide of second level y branch waveguide to the 3rd branch-waveguide along the first branch-waveguide.
Continue in this region to utilize a Y branch, TE1 patten transformation is TE0 pattern by the third level y branch waveguide be connected with the 4th branch-waveguide.Root duct width is herein decided by second level Y branch, and the width of W4 is in 290nm to 350nm scope herein.The length L4 scope of third level y branch waveguide is that L4 is greater than 100 μm.Described quintafurcation waveguide and the 6th branch-waveguide away from the root waveguide of described third level y branch waveguide two ends between the span of distance G3 be 3 μm >G3>1 μm and ensure that the coupling between output port is very little.
In sum, the polarization beam apparatus that the utility model provides has the bandwidth of operation of hundreds of nanometer and comparatively simple processing technology.Concrete, because the pattern distribution of Asymmetric Y-Waveguide is exactly broadband, can be operated in up to a hundred in the wavelength coverage of hundreds of nanometers.Make use of three Asymmetric Y-Waveguide cascades in polarization beam apparatus in the present embodiment, make use of the broadband character of Asymmetric Y-Waveguide, solve the shortcoming of conventional polarization beam splitter bandwidth narrower (conventional polarization beam splitter bandwidth only has tens nanometers usually).In addition, the polarization beam apparatus processing technology provided in the present embodiment is fairly simple, and those skilled in the art all can understand, and the polarization beam apparatus that the utility model provides utilizes conventional CMOS technology just can realize.So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (13)
1. a polarization beam apparatus, it is characterized in that, described polarization beam apparatus at least comprises: be formed in the waveguide in the top layer silicon of SOI material, and described waveguide at least comprises first order y branch waveguide, second level y branch waveguide, third level y branch waveguide, and mode-conversion device; Described second level y branch waveguide comprises the 3rd branch-waveguide and the 4th branch-waveguide;
Wherein, described mode-conversion device connects the root waveguide of first order y branch waveguide and the root waveguide of second level y branch waveguide; Described 4th branch-waveguide connects the root waveguide of described third level y branch waveguide;
The span of the width S 1 of the root waveguide of described first order y branch waveguide is S1>1 μm.
2. polarization beam apparatus according to claim 1, it is characterized in that: described first order y branch waveguide comprises the first branch-waveguide and the second branch-waveguide, wherein, the width of described second branch-waveguide is greater than the width of described first branch-waveguide, and the span of the width W 1 of described first branch-waveguide is 330nm<W1<490nm.
3. polarization beam apparatus according to claim 2, is characterized in that: the span of the length L1 of described first order y branch waveguide is L1>100 μm.
4. polarization beam apparatus according to claim 2, is characterized in that: the span of described first branch-waveguide and the second branch-waveguide distance G1 between one end of the root waveguide away from described first order y branch waveguide is G1>2 μm.
5. polarization beam apparatus according to claim 1, it is characterized in that: the width of described 4th branch-waveguide is greater than the width of described 3rd branch-waveguide, the span of the width W 3 of described 3rd branch-waveguide is 250nm<W3<310nm.
6. polarization beam apparatus according to claim 5, is characterized in that: the span of the length L3 of described second level y branch waveguide is L3>100 μm.
7. polarization beam apparatus according to claim 5, is characterized in that: the span of described 3rd branch-waveguide and the 4th branch-waveguide distance G2 between one end of the root waveguide away from described first order y branch waveguide is G2>2 μm.
8. polarization beam apparatus according to claim 1, is characterized in that: the width of described 4th branch-waveguide equals the width of the root waveguide of described third level y branch waveguide.
9. polarization beam apparatus according to claim 1, it is characterized in that: described third level y branch waveguide comprises quintafurcation waveguide and the 6th branch-waveguide, the width of described 6th branch-waveguide is greater than the width of described quintafurcation waveguide, and the scope of the width W 4 of described quintafurcation waveguide is 290nm<W4<350nm.
10. polarization beam apparatus according to claim 1, is characterized in that: described quintafurcation waveguide and the 6th branch-waveguide away from the root waveguide of described third level y branch waveguide two ends between distance G3 be 3 μm of >G3>1 μm.
11. polarization beam apparatus according to claim 1, is characterized in that: the width at the two ends of described mode-conversion device is identical with the width of the root waveguide of connected first order y branch waveguide or the root waveguide of second level y branch waveguide respectively.
12. polarization beam apparatus according to claim 11, is characterized in that: the width S 1 of the root waveguide of described first order y branch waveguide is less than or equal to the width S 2 of the root waveguide of described second level y branch waveguide.
13. polarization beam apparatus according to claim 11, is characterized in that: the scope of the length L2 of described mode-conversion device is 0 μm of <L2<50 μm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105223647A (en) * | 2015-11-04 | 2016-01-06 | 江苏尚飞光电科技有限公司 | A kind of polarization beam splitting spinner and method for designing thereof |
| CN105652371A (en) * | 2014-11-14 | 2016-06-08 | 江苏尚飞光电科技有限公司 | Polarization beam splitter |
| WO2017101725A1 (en) * | 2015-12-18 | 2017-06-22 | 武汉邮电科学研究院 | Polarization rotator and beam combiner on the basis of waveguide with l-shaped cross section and asymmetric y-branches |
| CN107608026A (en) * | 2017-10-11 | 2018-01-19 | 中国计量大学 | Terahertz polarization multimode circulator based on snake type structure |
| CN110780381A (en) * | 2019-12-02 | 2020-02-11 | 中国科学院半导体研究所 | Polarization beam splitter with asymmetric three-waveguide structure and preparation method thereof |
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2014
- 2014-11-14 CN CN201420683913.3U patent/CN204188832U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105652371A (en) * | 2014-11-14 | 2016-06-08 | 江苏尚飞光电科技有限公司 | Polarization beam splitter |
| CN105652371B (en) * | 2014-11-14 | 2019-07-26 | 中科院南通光电工程中心 | Polarization beam apparatus |
| CN105223647A (en) * | 2015-11-04 | 2016-01-06 | 江苏尚飞光电科技有限公司 | A kind of polarization beam splitting spinner and method for designing thereof |
| WO2017101725A1 (en) * | 2015-12-18 | 2017-06-22 | 武汉邮电科学研究院 | Polarization rotator and beam combiner on the basis of waveguide with l-shaped cross section and asymmetric y-branches |
| CN107608026A (en) * | 2017-10-11 | 2018-01-19 | 中国计量大学 | Terahertz polarization multimode circulator based on snake type structure |
| CN110780381A (en) * | 2019-12-02 | 2020-02-11 | 中国科学院半导体研究所 | Polarization beam splitter with asymmetric three-waveguide structure and preparation method thereof |
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