CN101276068B - Mach-zehnder type silicon optical waveguide switch based on narrow slit wave guide - Google Patents
Mach-zehnder type silicon optical waveguide switch based on narrow slit wave guide Download PDFInfo
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- CN101276068B CN101276068B CN2008100614351A CN200810061435A CN101276068B CN 101276068 B CN101276068 B CN 101276068B CN 2008100614351 A CN2008100614351 A CN 2008100614351A CN 200810061435 A CN200810061435 A CN 200810061435A CN 101276068 B CN101276068 B CN 101276068B
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Abstract
The present invention discloses a Mach-Zehnder type silica optical waveguide switch based on narrow slit waveguide. After the wave splitting of the 3dB coupler which realizes power splitting function at the input end, a first group of two spot-size converting structures are respectively connected to the interference arms of two narrow slit waveguide structures, and then are connected to the output-end interference coupler through a second group of two spot-size converting structures. A random-structure 1*2 and 2*2 optical switches are formed through the different combination of two groups of spot-size converting structures. The present invention leads to a narrow slit waveguide and fills a low refraction ratio electrooptic material in the narrow slit. The modulation facility is enlarged, and the conventional indirect electrooptic modulation of carrier injection is switched to a direct electrooptic modulation. Besides, the silicon waveguides which are at two sides of the narrow slit and are electrically insulated naturally are taken as electrodes and the distance from the electrode to the modulation area is shortened. The two characteristics can equally increase the modulation efficiency of the switch. The whole structure is compact in dimension. The invention is compatible to the CMOS processing technique and provides a novel approach for the realization of the single-chip integrated high-speed electrooptic switch.
Description
Technical field
The present invention relates to a kind of optic communication device, particularly relate to a kind of Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide.
Background technology
Photoswitch is one of important components and parts in optical communication and the optical information processing system.The photoswitch of having realized at present comprises traditional physical construction photoswitch, based on Micro-Opto-Electro-Mechanical Systems switch, liquid crystal optical switch, waveguide type photoswitch, semiconductor optical amplifier photoswitch etc.Wherein adopting the waveguide type photoswitch of integrated photon technology development to have the advantage of low driving voltage, cramped construction, large scale array and integrability, is the important development direction of photoswitch.
As the stay material of the microelectric technique that develops rapidly over more than 40 years, silicon materials (mainly being the SOI material) also cause increasing concern in recent years in the integrated photon technology.Its application comprises all many-sides such as light interconnection, optical communication, light sensing.Since can be compatible mutually with the CMOS technology of standard, boundless market outlook had.And with low cost, be convenient to realize the integrated and chip interconnect of monolithic.But it is, also very immature to its research as the brand-new material of integrated photon technology.Particularly silica-based photoswitch does not all obtain good performance always.
The modal modulation system of present silica-based photoswitch is hot optical modulation.But, seriously limited its range of application because the slow-footed problem of hot optical modulation never is resolved.The switching speed that wants to reach nanosecond order must rely on electrooptical modulation.Because silicon materials do not have direct electrooptical effect, can only carry out indirect electrooptical modulation by the method that charge carrier injects, absorption loss is big, and extinction ratio is low, and speed advantage can not well be embodied.
Summary of the invention
In view of the foregoing, the object of the present invention is to provide a kind of Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide.
The objective of the invention is to realize by following technical solution:
The three-dB coupler, the output terminal interference coupler that comprise input end realization merit branch function, the interference arm of two slit waveguide structures and two groups of mould spot transformational structures; After input end realizes that merit is divided the three-dB coupler partial wave of function, be connected respectively to the interference arm of two slit waveguide structures, after second group two mould spot transformational structures, be connected to the output terminal interference coupler again through first group two mould spot transformational structures.
It is electro-optic polymer or liquid crystal that described two slit waveguide structures are interfered the electrooptical material of filling in the slit of arm.
Described mould spot transformational structure is that the conical gradual change waveguide of the single silicon waveguide composition of introducing is right, and the conical gradual change waveguide of perhaps introducing two silicon waveguides compositions simultaneously is right.
Described three-dB coupler be 1 * 2 multi-mode interference coupler (1 * 2MMI), 2 * 2 multi-mode interference couplers (2 * 2MMI), Y branch or directional coupler; Interference coupler is 2 * 2 multi-mode interference couplers, X knot or directional coupler; It makes up mutually and constitutes 1 * 2 and 2 * 2 optical waveguide optical switch respectively between different three-dB couplers and different interference couplers.
The described electrode of electrooptical material in the slit being implemented modulation by the silicon waveguide conduct of interfering arm slit both sides.
The beneficial effect that the present invention has is:
After the present invention introduces the notion of narrow slit wave-guide,, greatly enriched the modulation means that can adopt owing in slit, can fill the low-index material of any character.On the modulation system of switch, become the indirect electrooptical modulation that traditional charge carrier injects and be direct electrooptical modulation; And adopt the slit both sides naturally silicon waveguide of electricity isolation shortened the spacing of electrode and modulator zone as electrode, more than two characteristics all can improve the modulation efficiency of switch.The total compact dimensions is compatible with the CMOS processing technology, for the realization of single chip integrated high speed electro-optical switch provides a kind of new approach.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the section of structure of the A-A ' of Fig. 1;
Fig. 3 is the section of structure of the B-B ' of Fig. 1;
Fig. 4 introduces the synoptic diagram that the right mould spot transformational structure of conical gradual change waveguide is formed in single silicon waveguide;
Fig. 5 introduces the synoptic diagram that the right mould spot transformational structure of conical gradual change waveguide is formed in two silicon waveguides simultaneously;
Fig. 6 is the structural representation of 1 * 2 photoswitch that become with the X structure by Y branch;
Fig. 7 is the structural representation by 1 * 2 photoswitch of 1 * 2MMI and 2 * 2MMI formation;
Fig. 8 is the structural representation of 2 * 2 photoswitches that are made of the both direction coupling mechanism;
Fig. 9 is the structural representation by 2 * 2 photoswitches of two 2 * 2MMI formations;
Among the figure: 1, three-dB coupler, 2, mould spot transformational structure, 3, the interference arm of slit waveguide structure, 4, interference coupler, 5, interfere the silicon waveguide of arm slit both sides, 6, the slit of interfering arm, 7, the waveguide of input and output single mode silicon, 8, the conical gradual change waveguide of introducing single silicon waveguide composition is right, and 9, the conical gradual change waveguide of two silicon waveguide compositions is right, 10, Y branch, 11, the X knot, 12, wide core waveguide, 13, narrow core waveguide, 14,2 * 23dB multi-mode interference coupler, 15,2 * 2 multi-mode interference couplers, 16,1 * 2 multi-mode interference coupler, 17, directional coupler, 18, the silicon dioxide cushion of SOI material, 19, the silicon substrate of SOI material.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
With reference to shown in Figure 1, the present invention includes input end and realize the three-dB coupler 1 of merit branch function, interference arm 3 and two groups of mould spot transformational structures 2 of 4, two slit waveguide structures of output terminal interference coupler; After input end realizes that merit is divided three-dB coupler 1 partial wave of function, be connected respectively to the interference arm 3 of two slit waveguide structures, after second group two mould spot transformational structures 2, be connected to output terminal interference coupler 4 again through first group two mould spot transformational structures 2.
With reference to Fig. 2, shown in Figure 3, the present invention is to be platform with the SOI material, with the electro-optical organic material is to interfere arm slit filler, realizes Mach-Zehnder (MZ) the type silicon optical waveguide switch of switching function by it being carried out electrooptical modulation.Silicon duct height h is 300 nanometers among the present invention, input and output single mode waveguide 7 width W
dBe 400 nanometers.The slit 6 width d that interfere arm
sBe 140 nanometers, slit two side waveguide 5 width d
cBe 250 nanometers.Utilize the characteristic of narrow slit wave-guide, in the middle of the slit 6 of interfering arm, fill, realize interfering the direct electrooptical modulation of arm with different electrooptical materials.The present invention has adopted electro-optic polymer DR1/PMMA and liquid crystal material.
With reference to Fig. 4, shown in Figure 5, mould spot transformational structure 2 for single mode waveguide-narrow slit wave-guide-single mode waveguide, the present invention has used the single silicon waveguide of introducing to constitute complementary conical gradual change waveguide to 8, and introduces the waveguide of two silicon waveguides formation conical gradual changes simultaneously to 9 these two kinds of structures.
Described three-dB coupler 1 is 1 * 2 multi-mode interference coupler, 16,2 * 2 multi-mode interference couplers 14, Y branch 10 or directional coupler 17; Interference coupler 4 is 2 * 2 multi-mode interference couplers 15, X knot 11 or directional coupler 17; It makes up 4 of different three-dB couplers 1 and different interference couplers mutually and constitutes 1 * 2 and 2 * 2 optical waveguide optical switch respectively.
Below be embodiments of the invention, but enforcement of the present invention be not limited in following these embodiment:
Embodiment 1:
Referring to shown in Figure 6,1 * 2 photoswitch that adopts Y branch and X structure to become.Getting top layer silicon thickness is 500 nanometers, and silicon dioxide cushion 18 thickness are 2 microns SOI slice, thin piece, go out layer of silicon dioxide as mask in the top layer thermal oxide, and the method that adopts E-beam directly to write etches device architecture.The Y branch 10 that has comprised the branch wave energy introduces conical gradual change waveguide that two silicon waveguides form to 9 mould spot transformational structures 2, the interference arm 3 of slit waveguide structure and work the X that closes the ripple effect and tie 11.Go up electro-optic polymer DR1/PMMA as top covering by the spin coating covering, and be filled into the slit of interfering arm.The silicon waveguide 5 of slit both sides is directly as electrode.
When not adding phase modulation (PM), leniently core waveguide 12 outputs of guided wave; When wherein one interfere arm when electrooptical modulation produces the π phase shift, differ to the two-way light of π and through asymmetric X-junction 11 can connect after, export from narrow core waveguide 13.Thereby finish switching function.
Embodiment 2:
Referring to shown in Figure 7, MMI-MZI type 1 * 2 photoswitch.Getting top layer silicon thickness is 500 nanometers, and silicon dioxide cushion 18 thickness are 2 microns SOI slice, thin piece, go out layer of silicon dioxide as mask in the top layer thermal oxide, and the method that adopts E-beam directly to write etches device architecture.1 * the 2MMI 16 that has comprised the branch wave energy introduces conical gradual change waveguide that single silicon waveguide forms to 8 mould spot transformational structures 2, the interference arm 3 of slit waveguide structure and work the 2 * 2MMI 15 that closes the ripple effect.Device is immersed in the liquid crystal, make it, and be filled into the slit of interfering arm as top covering.The silicon waveguide 5 of slit both sides is directly as electrode.
When not adding modulation, light is from intersecting the output of attitude port.If apply modulation on a phase shift arm therein, make its phase shift that produces π, differing of two-beam is exactly-pi/2 that light is from straight-through attitude output.
Embodiment 3:
Referring to shown in Figure 8,2 * 2 photoswitches that directional coupler constitutes.Getting top layer silicon thickness is 500 nanometers, and silicon dioxide cushion 18 thickness are 2 microns SOI slice, thin piece, go out layer of silicon dioxide as mask in the top layer thermal oxide, and the method that adopts E-beam directly to write etches device architecture.First directional coupler 17 that has comprised the branch wave energy is introduced conical gradual change waveguide that two silicon waveguides form to 9 mould spot transformational structures 2, the interference arm 3 of slit waveguide structure and work second directional coupler 11 that closes the ripple effect.Go up electro-optic polymer DR1/PMMA as top covering by the spin coating covering, and be filled into the slit of interfering arm.The silicon waveguide 5 of slit both sides is directly as electrode.
During non-modulated, guided wave is from intersecting attitude output.When wherein an interference arm had applied the π phase modulation (PM), guided wave was from straight-through attitude output.
Embodiment 4:
Referring to shown in Figure 9, MMI-MZI type 2 * 2 photoswitches.Getting top layer silicon thickness is 500 nanometers, and the silicon dioxide buffer layer thickness is 2 microns a SOI slice, thin piece, goes out layer of silicon dioxide as mask in the top layer thermal oxide, and the method that adopts E-beam directly to write etches device architecture.2 * the 2MMI 14 that has comprised the branch wave energy introduces conical gradual change waveguide that single silicon waveguide forms to 8 mould spot transformational structures 2, the interference arm 3 of slit waveguide structure and work the 2 * 2MMI 15 that closes the ripple effect.Device is immersed in the liquid crystal, make it, and be filled into the slit of interfering arm as top covering.The silicon waveguide 5 of slit both sides is directly as electrode.
During non-modulated, light is from intersecting the output of attitude port.If apply modulation on a phase shift arm therein, make its phase shift that produces π, differing of two-beam is exactly-pi/2 that light is from straight-through attitude output.
Claims (5)
1. the Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide is made by the top layer silicon material of SOI material, comprises three-dB coupler (1), output terminal interference coupler (4) and two interference arms of input end realization merit branch function; It is characterized in that: described two interference arms all are to be made of narrow slit wave-guide, and each interferes the arm two ends also to have mould spot transformational structure (2); Input end is connected respectively to two narrow slit wave-guides through first group two mould spot transformational structures (2) after realizing that merit is divided three-dB coupler (1) partial wave of function, after second group two mould spot transformational structures (2), is connected to the output terminal interference coupler again; Fill electrooptical material in the slit of described two narrow slit wave-guides (6).
2. a kind of Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide according to claim 1 is characterized in that: the electrooptical material of filling in the slit of described two narrow slit wave-guides (6) is an electro-optic polymer.
3. a kind of Mach-zehnder type silicon optical waveguide switch according to claim 1 based on narrow slit wave-guide, it is characterized in that: described mould spot transformational structure (2) is to introduce the conical gradual change waveguide of single silicon waveguide composition to (8), and the conical gradual change waveguide of perhaps introducing two silicon waveguides compositions simultaneously is to (9).
4. a kind of Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide according to claim 1 is characterized in that: described three-dB coupler (1) is 1 * 2 multi-mode interference coupler (16), 2 * 2 multi-mode interference couplers (14), Y branch (10) or directional coupler (17); Interference coupler (4) is that 2 * 2 multi-mode interference couplers (15), X tie (11) or directional coupler (17); It makes up mutually and constitutes 1 * 2 and 2 * 2 optical waveguide optical switch respectively between different three-dB coupler (1) and different interference coupler (4).
5. a kind of Mach-zehnder type silicon optical waveguide switch based on narrow slit wave-guide according to claim 1 is characterized in that: the silicon waveguide (5) of interfering arm slit (6) both sides is as the electrode of electrooptical material in the slit being implemented modulation.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2610657A1 (en) * | 2011-12-28 | 2013-07-03 | Fujitsu Limited | Spot size converter, optical transmitter, optical receiver, optical transceiver, and method of manufacturing spot size converter |
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| CN105572800B (en) * | 2016-01-26 | 2019-04-30 | 东南大学 | A kind of polarization rotator based on silicon substrate slot type waveguide coupling |
| CN107290824B (en) * | 2016-04-13 | 2020-01-10 | 华为技术有限公司 | Waveguide structure and preparation method |
| CN108183390B (en) * | 2017-12-26 | 2019-07-16 | 武汉邮电科学研究院 | A kind of monolithic silicon substrate transmitter |
| CN110231719A (en) * | 2018-03-05 | 2019-09-13 | 中国科学院半导体研究所 | A kind of electrooptic modulator |
| CN111147130B (en) | 2018-11-02 | 2023-05-09 | 华为技术有限公司 | Light source backup method, device and system |
| CN110779440B (en) * | 2019-10-12 | 2021-05-07 | 浙江大学 | Polarization insensitive photosensitive switch based on Mach Zehnder interferometer structure |
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| CN114236883A (en) * | 2021-12-28 | 2022-03-25 | 天津工业大学 | Silicon/polymer hybrid slit waveguide Mach-Zehnder electro-optic modulator |
| CN115421246B (en) * | 2022-11-03 | 2023-03-28 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2610657A1 (en) * | 2011-12-28 | 2013-07-03 | Fujitsu Limited | Spot size converter, optical transmitter, optical receiver, optical transceiver, and method of manufacturing spot size converter |
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