CN110231719A - A kind of electrooptic modulator - Google Patents
A kind of electrooptic modulator Download PDFInfo
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- CN110231719A CN110231719A CN201810178049.4A CN201810178049A CN110231719A CN 110231719 A CN110231719 A CN 110231719A CN 201810178049 A CN201810178049 A CN 201810178049A CN 110231719 A CN110231719 A CN 110231719A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0113—Glass-based, e.g. silica-based, optical waveguides
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of electrooptic modulator, including spot-size converter, Y-branch beam splitting optical waveguide, the waveguide of Y-branch combined beam light, hybrid integrated phase-modulation arm, traveling wave electrode, in which: spot-size converter, for reducing the model field unbalance of single mode optical fiber and modulator, the efficient coupling of the two light field is realized；Y-branch beam splitting optical waveguide, for forming beam splitting laser for laser beam splitter；Hybrid integrated phase-modulation arm is used for transmission laser, conversion light mould field and realizes that electric signal modulates the high efficiency of optical signal；Traveling wave electrode is advantageously implemented the speeds match of light wave and microwave, and then improves modulator bandwidth；Y-branch combined beam light waveguide, for modulated beam splitting laser to be merged into beam of laser.The modulator of the disclosure, is integrated with spot-size converter, greatly reduces coupling loss of the light field from optical fiber to modulator, to reduce the insertion loss of modulator；The modulator of the disclosure can significantly improve Electro-optical Modulation efficiency, to reduce the half-wave voltage of modulator.
Description
Technical field
The invention belongs to field of semiconductor integration technology, relate more specifically to a kind of hybrid integrated high-performance electric light modulation
Device.
Background technique
In recent years, the information systems such as radar and electronic countermeasure, wireless communication are just towards broadband, integration and miniaturization side
To fast development.These information systems all have strict requirements to analog optical link, and modulator is the core in analog optical link
It is necessary to have the characteristics such as high bandwidth, low half-wave voltage, low insertion loss, small size and high linearity for heart device.
Lot of domestic and foreign mechanism has carried out deep exploration to high-performance modulator is developed, and achieves fruitful progress
And achievement.Classify by material system, electrooptic modulator is broadly divided into lithium niobate (LiNbO3) modulator, indium phosphide (InP) modulation
Device, silicon (Si) modulator and polymer (Polymer) electrooptic modulator.Wherein, LiNbO3Modulator is most mature electric light tune
Device processed, with roomy, good reliability, but size is big, it is integrated with laser and detector to be difficult to realize；InP modulator is easy of integration, but
Loss is high, and maturity is low；Si modulator size is small, and loss is low, but poor linearity, commercial less；Polymer electrooptical modulator band
It is roomy, but high, poor reliability is lost.
Summary of the invention
Based on the above technical problem, the main purpose of the disclosure is to be to propose a kind of electrooptic modulator, for solve with
At least one of upper technical problem.
To achieve the goals above, the present disclosure proposes a kind of electrooptic modulators, including the first spot-size converter, Y-branch
Two hybrid integrated phase-modulation arms of beam splitting optical waveguide, traveling wave electrode, the waveguide of Y-branch combined beam light and the second spot-size converter,
In:
First spot-size converter is connect with input single mode optical fiber, for realizing input single mode optical fiber and the electric light tune
The model field unbalance of device processed reduces loss；
The input terminal of the Y-branch beam splitting optical waveguide is connected with first spot-size converter, is used for laser beam splitter, shape
At beam splitting laser；
One end of the hybrid integrated phase-modulation arm is connected with the output end of the Y-branch beam splitting optical waveguide, for passing
Defeated laser, conversion light mould field simultaneously realize that electric signal modulates the high efficiency of optical signal；
The traveling wave electrode provides electric field for the hybrid integrated phase-modulation arm, for realizing the speed of light wave and microwave
Matching, and then improve modulator bandwidth；
The input terminal of the Y-branch combined beam light waveguide is connected with the other end of the hybrid integrated phase-modulation arm, output
End is connect with second spot-size converter, for modulated beam splitting laser to be merged into beam of laser；
Second spot-size converter is connect with output single mode optical fiber, for realizing output single mode optical fiber and the electric light tune
The model field unbalance of device processed reduces loss.
In some embodiments of the present disclosure, the electrooptic modulator is based on SOI substrate, using Mach Zeng Dejie
Structure is converted to electric field to the intensity modulated of light field by the interference of phase-modulation on two hybrid integrated phase-modulation arms.
In some embodiments of the present disclosure, first spot-size converter and second spot-size converter by sandwich layer and
Covering composition, sandwich layer uses horizontal wedge structure, for realizing the big optical mode field from single mode optical fiber to modulator waveguide to small light
The conversion of mould field.
In some embodiments of the present disclosure, the Y-branch beam splitting optical waveguide and the Y-branch combined beam light waveguide are by sandwich layer
It is formed with clad material, splitting ratio 1: 1.
In some embodiments of the present disclosure, first spot-size converter, second spot-size converter, the Y point
Branch beam splitting optical waveguide and the core material of the Y-branch combined beam light waveguide are silicon, and clad material is silica or silicon oxynitride.
In some embodiments of the present disclosure, the hybrid integrated phase-modulation arm is by ultra-thin silicon nanowires and sub-micron thick
Big electro-optic coefficient material film combine the super model waveguide composition formed, wherein the electro-optic coefficient of big electro-optic coefficient material is greater than
25pm/V may include mono-crystalline lithium niobate material.
In some embodiments of the present disclosure, the silicon materials of the hybrid integrated phase-modulation arm and big electro-optic coefficient material
Compound super model waveguide is formed by etching, passes most light fields in big electro-optic coefficient material layer by suitably sized design
It is defeated.
In some embodiments of the present disclosure, the big electro-optic coefficient material layer both ends of the hybrid integrated phase-modulation arm are adopted
With horizontal wedge structure, realize incident field from Y-branch beam splitting silicon waveguide to the conversion of big electro-optic coefficient material waveguide layer and
Optical output field closes the conversion of beam silicon waveguide from big electro-optic coefficient material waveguide layer to Y-branch.
In some embodiments of the present disclosure, above-mentioned traveling wave electrode uses CPW structure, for eliminating lump electrode to modulation
The limitation of bandwidth, and then increase modulation bandwidth.
The electrooptic modulator that the disclosure proposes, has the advantages that
1, the structure of the disclosure includes the symmetrical spot-size converter in both ends, realizes single-mode optics by reversed horizontal wedge structure
In fibre big optical mode field to the small optical mode field of modulator waveguide matching, to reduce the insertion loss of electrooptic modulator；
2, the structure of the disclosure is integrally based on SOI substrate production, and technical maturity is small in size, and compatible with CMOS technology, has
It is integrated conducive to the extensive silicon based opto-electronics for realizing future；
3, there is hybrid integrated phase-modulation arm, the optical mode field overwhelming majority is in big electro-optic coefficient film in the structure of the disclosure
It is transmitted in layer, the super model waveguide formed by etching is due to there is big refringence between air, so the limitation to light field
Spacing that is stronger, and then reducing film layer top electrode is acted on, modulation efficiency is improved, to reduce half-wave voltage；
4. the electrode that the structure of the disclosure uses is traveling wave electrode form, compared to traditional lump electrode form, greatly
Ground improves modulation bandwidth.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the electrooptic modulator that an embodiment of the disclosure proposes；
Fig. 2 is that the electrooptic modulator that an embodiment of the disclosure proposes is realized optical fiber by both ends mode-expansion structure and adjusted
Device optical mode processed field couples schematic diagram；
Fig. 3 is the schematic diagram of the y branch optical waveguide for the electrooptic modulator that an embodiment of the disclosure proposes；
Fig. 4 is the three-view diagram of the hybrid integrated phase-modulation arm for the electrooptic modulator that an embodiment of the disclosure proposes；
Fig. 5 is the schematic cross-section of the mixed-phase modulation arm for the electrooptic modulator that an embodiment of the disclosure proposes.
Description of symbols:
The first spot-size converter of 1-；2-Y branch beam splitting optical waveguide；3- hybrid integrated phase-modulation arm；4-Y branch combined beam light
Waveguide；The second spot-size converter of 5-；6- traveling wave electrode；7- silicon substrate；8 silicon dioxide layers.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
In the prior art, electrooptic modulator is mainly made of homogenous material system.It is broadly divided into lithium niobate (LiNbO3)
Modulator, indium phosphide (InP) modulator, silicon (Si) modulator and polymer (Polymer) electrooptic modulator.Wherein LiNbO3 tune
Device processed is most mature electrooptic modulator, and with roomy, good reliability, but size is big, is difficult to realize and laser and detector collection
At；InP modulator is easy of integration, but height is lost, and maturity is low；Si modulator size is small, and loss is low, but poor linearity；Polymer
Electrooptic modulator band is roomy, but high, poor reliability is lost.And need modulator that there is high bandwidth, low half-wave in analog optical link
The characteristics such as voltage, low insertion loss, small size and high linearity.
Based on the above technical problem, the present disclosure proposes a kind of electrooptic modulators, including the first spot-size converter, Y-branch
Beam splitting optical waveguide, the waveguide of Y-branch combined beam light, hybrid integrated phase-modulation arm, traveling wave electrode and the second spot-size converter, in which:
First spot-size converter is connect with input single mode optical fiber, for realizing the mould of input single mode optical fiber and modulator
Field mismatch, realizes the efficient coupling of the two light field, reduces loss；
The input terminal of Y-branch beam splitting optical waveguide is connected with first spot-size converter, for being formed laser beam splitter and being divided
Shu Jiguang；
One end of hybrid integrated phase-modulation arm is connected with the output end of the Y-branch beam splitting optical waveguide, is used for transmission sharp
Light, conversion light mould field simultaneously realize that electric signal modulates the high efficiency of optical signal；
Traveling wave electrode provides electric field for the hybrid integrated phase-modulation arm, for eliminating the RC time of lump electrode structure
The speeds match of light wave and microwave is realized in limitation of the constant to modulation bandwidth, improves modulator bandwidth；
The input terminal of Y-branch combined beam light waveguide is connected with the other end of the hybrid integrated phase-modulation arm, output end with
The second spot-size converter connection, for modulated beam splitting laser to be merged into beam of laser；
Second spot-size converter is connect with output single mode optical fiber, for realizing output single mode optical fiber and the electrooptic modulator
Model field unbalance, reduce loss.
In some embodiments of the present disclosure, the electrooptic modulator is based on SOI substrate, using Mach Zeng Dejie
Structure is converted to electric field to the intensity modulated of light field by the interference of phase-modulation on two hybrid integrated phase-modulation arms.
In some embodiments of the present disclosure, above-mentioned spot-size converter is using reversed horizontal wedge structure, using working as waveguide
Light field can diffuse to the characteristic transmitted in covering when sandwich layer size is sufficiently small, by etching waveguide wedge shape sandwich layer, redeposited waveguide
Covering realizes the conversion of optical mode field from big to small (vice versa).Mould field when optical fiber is coupled with modulator is greatly reduced to lose
With loss, to reduce the insertion loss of modulator.
In some embodiments of the present disclosure, Y-branch beam splitting optical waveguide and Y-branch combined beam light waveguide are by sandwich layer and covering material
Material composition, splitting ratio 1: 1.
In some embodiments of the present disclosure, the first spot-size converter, the second spot-size converter, Y-branch beam splitting optical waveguide
Core material with Y-branch combined beam light waveguide is silicon, and clad material is silica.
In some embodiments of the present disclosure, above-mentioned hybrid integrated phase-modulation arm is by ultra-thin silicon nanowires and sub-micron thick
Big electro-optic coefficient material film composition, composite material super model waveguide is formed by etching, wherein big electro-optic coefficient material
Electro-optic coefficient is greater than 25pm/V, may include mono-crystalline lithium niobate material etc..Wherein, suitably sized design makes most light fields
It is transmitted in big electro-optic coefficient material layer, realizes that electric field modulates the high efficiency of light field using the big electro-optic coefficient of material, and due to
Big electro-optic coefficient material layer is sub-micron thick film, the waveguide of high index-contrast is formed by etching, to the restriction effect of light field
Greatly enhancing, light mode field area reduce, so that electrode spacing reduces, the final half-wave voltage for greatly reducing modulator；Big electric light
Index material both ends use horizontal wedge structure, realize incident field from Y-branch beam splitting silicon waveguide to big electro-optic coefficient material
The conversion of ducting layer and optical output field close the conversion of beam silicon waveguide from big electro-optic coefficient material waveguide layer to Y-branch, reduce light
Field transition loss.
In some embodiments of the present disclosure, above-mentioned traveling wave electrode uses co-planar waveguide (CPW) structure, this structure electrode
Actually a kind of transmission line structure allows light wave and microwave along the same of coplanar electrodes using electrode as Coplanar stripline
One direction propagate, and signal be added in the form of traveling wave on crystal make high-frequency electric field in the form of traveling wave with light wave fields interact,
Compared to traditional lump electrode structure, modulation bandwidth is not limited by the RC time constant of electrode, and bandwidth increases, and CPW structure
It can reinforce effect of the electric field to light field, the modulation to light carrier can be realized with lesser driving power.
Embodiment
As shown in Figure 1, present embodiments providing a kind of big bandwidth of mixing material system, low half-wave voltage, being inserted into damage
The high-performance electric optical modulator of consumption.The electrooptic modulator includes the first spot-size converter 1, Y-branch beam splitting optical waveguide 2, mixing collection
At phase-modulation arm 3, Y-branch combined beam light waveguide 4, the second spot-size converter 5 and traveling wave electrode 6, the electrooptic modulator are formed in
In silicon dioxide layer 8 on silicon substrate 7, in which:
As shown in Fig. 2, the first and second spot-size converters 1 and 5, are all by the waveguide of sandwich layer silicon and covering silica group
Horizontal wedge structure is formed by etching at, sandwich layer, wedge-shaped face size it is small to a certain extent when light field can diffuse to covering biography
It is defeated, to expand optical mode field, match it with single mode optical fiber optical mode field, realizes the efficient coupling of optical fiber and modulator optical mode field,
To reduce insertion loss, coupled structure schematic diagram is as shown in Figure 2；
As shown in figure 3, Y-branch beam splitting optical waveguide 2, is made of the waveguide of sandwich layer silicon and covering silica, for laser point
Beam forms beam splitting laser, splitting ratio 1: 1；
Y-branch combined beam light waveguide 4, is made of the waveguide of sandwich layer silicon and covering silica, is used for modulated sharp combiner,
Form output laser, splitting ratio 1: 1；
As shown in Figures 4 and 5, hybrid integrated phase-modulation arm 3 is made of silicon materials and big electro-optic coefficient material film, is led to
Over etching forms composite material optical waveguide, and suitably sized design can make most light fields in big electro-optic coefficient film layer
Transmission improves Electro-optical Modulation efficiency using big electro-optic coefficient, and etches the super model waveguide formed since big refringence enhances
Limitation to light field, light mode field area reduce, and electrode spacing reduces, and the overlap factor of electric field and light field increases, and improve electricity
Light modulation efficiency greatly reduces the half-wave voltage of modulator.
Traveling wave electrode 6 (G represents ground electrode, S representation signal electrode) uses CPW electrode structure, and such structure electrode is i.e. altogether
Face microstrip transmission line structure allows light wave and microwave to propagate along the same direction of coplanar electrodes, and signal is added in the form of traveling wave
High-frequency electric field is set to interact in the form of traveling wave with light wave fields on crystal, compared to traditional lump electrode structure, modulation bandwidth
It is not limited by the RC time constant of electrode, bandwidth increases, and CPW structure can be realized with lesser driving power to light carrier
Modulation.
Composite material modulator provided in this embodiment is formed based on SOI (silicon on insulator) substrate
, small in size, technical maturity, and it is compatible with CMOS technology, it is integrated to be conducive to following extensive silicon based opto-electronics；And by silicon substrate and
The advantage of big electro-optic coefficient thin-film material high efficiency Electro-optical Modulation combines, and compensates for the deficiency of homogenous material system modulator.
To sum up, the silicon substrate hybrid integrated modulator provided through this embodiment, can satisfy analog optical link to electric light tune
The urgent need of device big bandwidth, low half-wave voltage, low insertion loss processed resists radar, electronics and wireless communication system has
Critically important meaning.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of electrooptic modulator, including the first spot-size converter, Y-branch beam splitting optical waveguide, two hybrid integrated phase-modulations
Arm, traveling wave electrode, the waveguide of Y-branch combined beam light and the second spot-size converter, in which:
First spot-size converter is connect with input single mode optical fiber, and the mould field for reducing input single mode optical fiber and modulator is lost
Match, reduces loss；
The input terminal of the Y-branch beam splitting optical waveguide is connected with first spot-size converter, for being formed laser beam splitter and being divided
Shu Jiguang；
One end of the hybrid integrated phase-modulation arm is connected with the output end of the Y-branch beam splitting optical waveguide, is used for transmission sharp
Light, conversion light mould field simultaneously realize that electric signal modulates the high efficiency of optical signal；
The traveling wave electrode provides electric field for the hybrid integrated phase-modulation arm, for realizing the speed of light wave and microwave
Match, and then improves modulator bandwidth；
The input terminal of the Y-branch combined beam light waveguide is connected with the other end of the hybrid integrated phase-modulation arm, output end with
The second spot-size converter connection, for modulated beam splitting laser to be merged into beam of laser；
Second spot-size converter is connect with output single mode optical fiber, for realizing the mould of output single mode optical fiber and the electrooptic modulator
Field mismatch, reduces loss.
2. electrooptic modulator as described in claim 1, wherein the electrooptic modulator is based on SOI substrate, once using Mach
Moral structure is converted to electric field to the intensity modulated of light field by the interference of phase-modulation on two hybrid integrated phase-modulation arms.
3. electrooptic modulator as described in claim 1, wherein the spot-size converter is made of sandwich layer and covering, sandwich layer
Using horizontal wedge structure, for realizing the conversion of the big optical mode field from single mode optical fiber to silicon waveguide to small optical mode field.
4. electrooptic modulator as described in claim 1, wherein the Y-branch beam splitting optical waveguide and the Y-branch combined beam light
Waveguide is made of sandwich layer and clad material, splitting ratio 1: 1.
5. electrooptic modulator as described in claim 3 or 4, wherein first spot-size converter, second mode-expansion
The core material of device, the Y-branch beam splitting optical waveguide and the Y-branch combined beam light waveguide is silicon, and clad material is silica
Or silicon oxynitride.
6. electrooptic modulator as described in claim 1, wherein the hybrid integrated phase-modulation arm is by ultra-thin silicon nanowires
The super model waveguide composition formed is combined with the big electro-optic coefficient material film of sub-micron thick.
7. electrooptic modulator as claimed in claim 6, wherein the big electro-optic coefficient material includes mono-crystalline lithium niobate material.
8. electrooptic modulator as described in claim 1, wherein the silicon materials of the hybrid integrated phase-modulation arm and big electricity
Backscatter extinction logarithmic ratio material forms compound super model waveguide by etching, makes the optical mode field overwhelming majority in big electric light by suitably sized design
Index material transmission.
9. electrooptic modulator as described in claim 1, wherein the big electro-optic coefficient material of the hybrid integrated phase-modulation arm
Bed of material both ends use horizontal wedge structure, realize incident field from Y-branch beam splitting silicon waveguide to big electro-optic coefficient material waveguide layer
Conversion and optical output field the conversion of beam silicon waveguide is closed from big electro-optic coefficient material waveguide layer to Y-branch.
10. electrooptic modulator as described in claim 1, wherein the traveling wave electrode uses CPW structure, for eliminating lump
Limitation of the RC time constant of electrode to modulation bandwidth increases modulation bandwidth.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN111721709A (en) * | 2020-01-22 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Method and device for improving signal-to-noise ratio of silicon nanowire sensor by utilizing optical modulation |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN113204132A (en) * | 2021-05-07 | 2021-08-03 | 联合微电子中心有限责任公司 | End face coupler and preparation method thereof |
| CN113219681A (en) * | 2020-01-21 | 2021-08-06 | 济南晶正电子科技有限公司 | Optical waveguide integrated device |
| CN114730047A (en) * | 2019-12-02 | 2022-07-08 | 华为技术有限公司 | Spot-on-film converter, method for manufacturing spot-on-film converter, silicon optical device and optical communication equipment |
| CN115061291A (en) * | 2022-07-18 | 2022-09-16 | 中国电子科技集团公司第四十三研究所 | Broadband low-loss electro-optical modulator |
| CN115793291A (en) * | 2023-02-06 | 2023-03-14 | 福建玻尔光电科技有限责任公司 | Acousto-optic modulator combining interdigital transducer and traveling wave electrode |
| CN116560119A (en) * | 2023-06-25 | 2023-08-08 | 华中科技大学 | Silicon-based thin film lithium niobate broadband electro-optic modulator chip based on traveling wave electrode structure |
| WO2023179336A1 (en) * | 2022-03-21 | 2023-09-28 | 上海曦智科技有限公司 | Electro-optic modulator and manufacturing method therefor |
| CN114488580B (en) * | 2020-11-13 | 2024-07-19 | 天津工业大学 | High-speed electro-optic modulator based on silicon nitride/organic polymer mixed waveguide structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261675A (en) * | 1999-01-21 | 2000-08-02 | 三星电子株式会社 | Model shape converter, its making method and integrated optical device using said unit |
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| CN101276068A (en) * | 2008-04-30 | 2008-10-01 | 浙江大学 | Mach-zehnder type silicon optical waveguide switch based on narrow slit wave guide |
| CN107843957A (en) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method |
-
2018
- 2018-03-05 CN CN201810178049.4A patent/CN110231719A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261675A (en) * | 1999-01-21 | 2000-08-02 | 三星电子株式会社 | Model shape converter, its making method and integrated optical device using said unit |
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| CN101276068A (en) * | 2008-04-30 | 2008-10-01 | 浙江大学 | Mach-zehnder type silicon optical waveguide switch based on narrow slit wave guide |
| CN107843957A (en) * | 2017-11-13 | 2018-03-27 | 上海理工大学 | The heterogeneous integrated waveguide device architecture of silicon nitride lithium niobate and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| PAYAM RABIEI ET AL: "Thin-Film Mach-Zehnder Lithium Niobate Optical Modulator on Silicon Substrates with VπL of 4 V•cm", 《ECOC 2013》 * |
| PETER O. WEIGEL1: "Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics", 《SCIENTIFIC REPORTS》 * |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113219681B (en) * | 2020-01-21 | 2022-07-15 | 济南晶正电子科技有限公司 | Optical waveguide integrated device |
| CN111721709A (en) * | 2020-01-22 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Method and device for improving signal-to-noise ratio of silicon nanowire sensor by utilizing optical modulation |
| CN111721709B (en) * | 2020-01-22 | 2021-08-17 | 中国科学院上海微系统与信息技术研究所 | Method and device for improving signal-to-noise ratio of silicon nanowire sensor by utilizing optical modulation |
| CN111240054A (en) * | 2020-03-31 | 2020-06-05 | 亨通洛克利科技有限公司 | PSM4/AOC light emission chip |
| CN114488580B (en) * | 2020-11-13 | 2024-07-19 | 天津工业大学 | High-speed electro-optic modulator based on silicon nitride/organic polymer mixed waveguide structure |
| CN113093333A (en) * | 2021-04-23 | 2021-07-09 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN113204132A (en) * | 2021-05-07 | 2021-08-03 | 联合微电子中心有限责任公司 | End face coupler and preparation method thereof |
| CN113204132B (en) * | 2021-05-07 | 2024-06-21 | 联合微电子中心有限责任公司 | End face coupler and preparation method thereof |
| WO2023179336A1 (en) * | 2022-03-21 | 2023-09-28 | 上海曦智科技有限公司 | Electro-optic modulator and manufacturing method therefor |
| TWI849801B (en) * | 2022-03-21 | 2024-07-21 | 大陸商上海曦智科技有限公司 | Electro-optical modulator and method of manufacturing the same |
| CN115061291A (en) * | 2022-07-18 | 2022-09-16 | 中国电子科技集团公司第四十三研究所 | Broadband low-loss electro-optical modulator |
| CN115793291A (en) * | 2023-02-06 | 2023-03-14 | 福建玻尔光电科技有限责任公司 | Acousto-optic modulator combining interdigital transducer and traveling wave electrode |
| CN116560119B (en) * | 2023-06-25 | 2023-09-19 | 华中科技大学 | Silicon-based thin film lithium niobate broadband electro-optic modulator chip based on traveling wave electrode structure |
| CN116560119A (en) * | 2023-06-25 | 2023-08-08 | 华中科技大学 | Silicon-based thin film lithium niobate broadband electro-optic modulator chip based on traveling wave electrode structure |
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Application publication date: 20190913 |