CN111487719A - Mode conversion-based silicon-based lithium niobate polarization-independent optical modulator - Google Patents
Mode conversion-based silicon-based lithium niobate polarization-independent optical modulator Download PDFInfo
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- CN111487719A CN111487719A CN202010319894.6A CN202010319894A CN111487719A CN 111487719 A CN111487719 A CN 111487719A CN 202010319894 A CN202010319894 A CN 202010319894A CN 111487719 A CN111487719 A CN 111487719A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Abstract
The invention discloses a silicon-based lithium niobate polarization-independent optical modulator based on mode conversion, which relates to the technical field of optoelectronic devices and comprises a substrate layer, wherein a mode converter, an asymmetric directional coupler and two MZ-structure modulators with the same structure are arranged on the upper end surface of the substrate layer side by side; the invention mixes silicon and lithium niobate together, introduces the linear electro-optic effect of the lithium niobate to a silicon-based platform, and improves the performance of the optical modulator by combining the advantages of the silicon and the lithium niobate; a polarization independent light modulator can be realized.
Description
Technical Field
The invention relates to the technical field of optoelectronic devices, in particular to a mode conversion-based silicon-based lithium niobate polarization-independent optical modulator.
Background
Silicon-based photonic platforms are the best integrated optical platforms at the present time. The silicon-based photonics platform is compatible with the traditional CMOS process and has high refractive index difference, so that the silicon-based photonics platform has two advantages of easiness in large-scale manufacturing and integration. Silicon-based platforms are well suited for making passive devices, but the basic properties of silicon make the implementation of some active devices a significant challenge. Silicon is a centrosymmetric crystal structure, so that the silicon has no linear electro-optic effect, which is realized by forming a PN junction by ion implantation and changing the refractive index of a silicon waveguide by changing the carrier concentration of the PN junction, thereby realizing the modulation of the amplitude of the optical wave. However, the method changes the refractive index of the silicon waveguide and simultaneously changes the loss of the silicon waveguide, and realizes high bandwidth on the basis of sacrificing extinction ratio, so that the application of the silicon-based modulator in a long-distance digital optical communication system is limited, and in addition, because the carrier effect is a nonlinear process, the linearity of the silicon-based modulator is far lower than that of a traditional lithium niobate device, and the linearity requirement is higher and higher in the application of a future 5G mobile communication system, microwave photonics and next-generation optical fiber communication.
In summary, despite the great technical advantages of silicon-based photonic devices, silicon-based modulators based on the carrier effect still do not match the performance of commercial lithium niobate modulators. The lithium niobate material has excellent linear electro-optic effect and is the preferred material for high-performance optical modulators.
However, the electro-optical modulator based on the lithium niobate silicate has an obvious polarization sensitivity characteristic, and can only effectively modulate the light wave in a specific polarization direction, but has an unobvious modulation effect on the light waves in other polarization directions, so that the application range of the optical modulator is limited.
As mentioned above, the problems existing in the prior lithium niobate silicon-based electro-optical modulator are all technical problems to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to: in order to solve the technical problem that the traditional silicon-based lithium niobate modulator is sensitive to the polarization direction of incident light waves, the invention provides a mode conversion-based silicon-based lithium niobate polarization-independent optical modulator.
The invention specifically adopts the following technical scheme for realizing the purpose:
a silicon-based lithium niobate polarization-independent optical modulator based on mode conversion comprises a substrate layer, wherein a mode converter, an asymmetric directional coupler and two parallel MZ-structure modulators with the same structure are arranged on the upper end face of the substrate layer, the mode converter comprises an input end mode converter and an output end mode converter which are symmetrically arranged at two ends of the corresponding MZ-structure modulator, have the same structure and are respectively connected with two ends of the corresponding MZ-structure modulator, and the asymmetric directional coupler comprises an input end asymmetric directional coupler and an output end asymmetric directional coupler which are symmetrically arranged at two ends of the corresponding MZ-structure modulator, have the same structure and are respectively connected with two ends of the corresponding MZ-structure modulator; each MZ structure modulator comprises a silicon-based optical waveguide structure, an optical beam splitting structure, a silicon wedge-shaped waveguide optical mode conversion structure, a bonding medium layer, a ridge lithium niobate waveguide, a signal metal electrode and a grounding metal electrode, wherein the silicon-based optical waveguide structure is connected with the input end of the optical beam splitting structure, and two output ends of the optical beam splitting structure are respectively connected with the ridge lithium niobate waveguide through the silicon wedge-shaped waveguide optical mode conversion structure; the signal metal electrode is arranged on one side of the optical beam splitting structure opposite to the two output ends; the grounding metal electrode is arranged on one side of the optical beam splitting structure with the two output ends being opposite to each other; the optical mode conversion structure of the silicon wedge waveguide is arranged in the bonding medium layer, and the ridge lithium niobate waveguide, the signal metal electrode and the grounding metal electrode are arranged above the bonding medium layer.
Further, the mode converter can implement a low order mode (TE)0，TM0) Conversion to higher order modes with a smaller end waveguide width W of the mode converter1Is of a single-mode width, which means that the waveguide can only stably transmit TE under the width0，TM0Mode, larger end waveguide width W of the mode converter3Should be greater than TE1The cutoff width of the mode.
Further, the asymmetric directional coupler may couple TE in the lower waveguide arm1Mode coupling into the upper waveguide arm and conversion to TE0Mode(s).
Furthermore, the bonding dielectric layer is benzocyclobutene.
Further, the signal metal electrode and the grounding metal electrode are made of gold.
Further, the substrate layer is made of silicon dioxide, and the ridge-shaped lithium niobate waveguide is made of lithium niobate.
Furthermore, waveguide materials of the mode converter, the asymmetric directional coupler, the silicon-based optical waveguide structure, the optical beam splitting structure and the silicon wedge waveguide optical mode conversion structure are all Si.
The invention has the following beneficial effects:
1. the invention has simple structure, mixes silicon and lithium niobate together, introduces the linear electro-optic effect of the lithium niobate onto a silicon-based platform, and improves the performance of the optical modulator by combining the advantages of the silicon and the lithium niobate, and specifically comprises the following steps: the optical beam splitting structure splits the light beam in the silicon-based optical structure into two beams which are completely equal, and the two beams are gradually coupled into the lithium niobate waveguide through the silicon wedge waveguide optical mode conversion structure. Voltage is applied to the signal metal electrode, the grounding metal electrode is grounded, and because the refractive index of the pockels effect lithium niobate waveguide changes, a refractive index difference is generated between the two lithium niobate waveguides, so that a phase difference is generated between the two beams of equal light. Two beams of light are gradually coupled into the silicon waveguide through the optical mode conversion structure of the silicon wedge waveguide, and the two beams of light interfere through the optical beam splitting structure, so that the intensity modulation of the light beam is realized.
2. Due to the adoption of the mode conversion structure and the adoption of the traditional silicon-based lithium niobate manufacturing process, the light modulator irrelevant to polarization can be realized.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic top view of the present invention;
FIG. 3 is a schematic end view of a silicon wedge waveguide mode-conversion structure;
FIG. 4 is a schematic view of a portion of the structure of FIG. 2;
FIG. 5 is a schematic view of a portion of the structure of FIG. 2;
reference numerals: the optical waveguide coupler comprises a substrate 1, a mode converter 2, an asymmetric coupler 3, a silicon-based optical waveguide 4, an optical beam splitting structure 5, a silicon wedge waveguide optical mode conversion structure 6, a bonding dielectric layer 7, a lithium niobate ridge 8, a signal metal electrode 9 and a grounding metal electrode 10.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that the terms "inside", "outside", "upper", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally arranged when products of the present invention are used, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements indicated must have specific orientations, be constructed in specific orientations, and operated, and thus, cannot be construed as limiting the present invention.
A silicon-based lithium niobate polarization-independent optical modulator based on mode conversion comprises a substrate layer 1, wherein a mode converter 2, an asymmetric directional coupler 3 and two MZ-structure modulators which are same in structure and are arranged side by side are arranged on the upper end face of the substrate layer 1, the mode converter 2 comprises an input end mode converter and an output end mode converter which are symmetrically arranged at two ends of the corresponding MZ-structure modulator, are same in structure and are respectively connected with two ends of the corresponding MZ-structure modulator, and the asymmetric directional coupler 3 comprises an input end asymmetric directional coupler and an output end asymmetric directional coupler which are symmetrically arranged at two ends of the corresponding MZ-structure modulator, are same in structure and are respectively connected with two ends of the corresponding MZ-structure modulator; each MZ structure modulator comprises a silicon-based optical waveguide structure 4, an optical beam splitting structure 5, a silicon wedge-shaped waveguide optical mode conversion structure 6, a bonding medium layer 7, a ridge lithium niobate waveguide 8, a signal metal electrode 9 and a grounding metal electrode 10, wherein the silicon-based optical waveguide structure 4 is connected with the input end of the optical beam splitting structure 5, and two output ends of the optical beam splitting structure 5 are respectively connected with the ridge lithium niobate waveguide 8 through the silicon wedge-shaped waveguide optical mode conversion structure 6; the signal metal electrode 9 is arranged on one side of the optical beam splitting structure 5 opposite to the two output ends; the grounding metal electrode 10 is arranged on one side of the optical beam splitting structure 5 with the two output ends thereof being opposite to each other; the silicon wedge waveguide optical mode conversion structure 6 is arranged in the bonding medium layer 7, and the ridge lithium niobate waveguide 8, the signal metal electrode 9 and the grounding metal electrode 10 are arranged above the bonding medium layer.
The mode converter 2 is capable of implementing a low order mode (TE)0，TM0) Conversion with higher order modes, the smaller end waveguide width W of the mode converter 21Is of a single-mode width, which means that the waveguide can only stably transmit TE under the width0，TM0Mode, larger end waveguide width W of said mode converter 23Should be greater than TE1The cutoff width of the mode.
The asymmetric directional coupler 3 can couple TE in the lower waveguide arm1Mode coupling into the upper waveguide arm and conversion to TE0Mode(s).
Example 1
As shown in FIGS. 1-3, in this embodiment, the material of the substrate layer 1 is SiO2The mode converter 2, the asymmetric directional coupler 3, the silicon-based optical waveguide structure 4, the optical beam splitting structure 5 and the silicon wedge waveguide optical mode conversion structure 6 are all made of Si, the bonding medium layer 7 is made of benzocyclobutene BCB, the ridge lithium niobate waveguide 8 is made of lithium niobate, and the signal metal electrode 9 and the grounding metal electrode 10 are made of Au; the mode converter 2 is a tapered waveguide mode converter.
The structural size of the tapered waveguide mode converter is W1＝0.69μm，W2＝0.7μm，W3＝0.74μm，W4＝0.8μm，W5＝0.4μm，L1＝10μm，L2＝50μm，L3＝10μm，L4＝7μm，L5＝40μm；
Distance between two waveguides of the coupler: wgap＝0.04μm；
Silicon wedge waveguide optical mode conversion structure 6 size: w5＝0.4μm，W6＝0.01μm，L6＝150μm，h0＝0.26μm；
Size of bonding dielectric layer 7: h is1＝0.3μm；
Size of ridge lithium niobate waveguide 8: w7＝1μm，h2＝0.42μm，h3＝0.18μm；
The working principle of the invention is as follows:
if the incident light is TM0Mode, tapered waveguide at entrance will be TM0Mode transition to TE1Mode(s). And TE1Modes can pass TE in the lower waveguide arm through the asymmetric directional coupler1Mode coupling into the upper waveguide arm and conversion to TE0Modes, finally TE in the modulator region0Is modulated. When the incident mode is TE0When in the mode, the mode conversion structure and the directional coupler have no influence on the mode conversion structure and the directional coupler. For TE0And TM0Incident light of both polarization modes is converted to TE before entering the lithium niobate modulation region0Finally, the same modulation effect can be obtained because the structures of the modulation region modulation arms are completely the same.
The optical beam splitting structure splits the light beam in the silicon-based optical structure into two beams which are completely equal, and the two beams are gradually coupled into the lithium niobate waveguide through the silicon wedge waveguide optical mode conversion structure. Voltage is applied to the signal metal electrode, the grounding metal electrode is grounded, and because the refractive index of the pockels effect lithium niobate waveguide changes, a refractive index difference is generated between the two lithium niobate waveguides, so that a phase difference is generated between the two beams of equal light. Two beams of light are gradually coupled into the silicon waveguide through the optical mode conversion structure of the silicon wedge waveguide, and the two beams of light interfere through the optical beam splitting structure, so that the intensity modulation of the light beam is realized.
In general, the invention mixes silicon and lithium niobate together, introduces the linear electro-optic effect of the lithium niobate to a silicon-based platform, and improves the performance of the optical modulator by combining the advantages of the silicon and the lithium niobate. Meanwhile, due to the adoption of a mode conversion structure and the adoption of the traditional silicon-based lithium niobate manufacturing process, the light modulator irrelevant to polarization can be realized.
Claims (7)
1. A mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator comprises a substrate layer (1), and is characterized in that: the upper end face of the substrate layer (1) is provided with a mode converter (2), an asymmetric directional coupler (3) and two parallel MZ structure modulators with the same structure, the mode converter (2) comprises an input end mode converter and an output end mode converter which are symmetrically arranged at two ends of the corresponding MZ structure modulator, have the same structure and are respectively connected with two ends of the corresponding MZ structure modulator, and the asymmetric directional coupler (3) comprises an input end asymmetric directional coupler and an output end asymmetric directional coupler which are symmetrically arranged at two ends of the corresponding MZ structure modulator, have the same structure and are respectively connected with two ends of the corresponding MZ structure modulator; each MZ structure modulator comprises a silicon-based optical waveguide structure (4), an optical splitting structure (5), a silicon wedge-shaped waveguide optical mode conversion structure (6), a bonding medium layer (7), a ridge lithium niobate waveguide (8), a signal metal electrode (9) and a grounding metal electrode (10), wherein the silicon-based optical waveguide structure (4) is connected with the input end of the optical splitting structure (5), and two output ends of the optical splitting structure (5) are respectively connected with the ridge lithium niobate waveguide (8) through the silicon wedge-shaped waveguide optical mode conversion structure (6); the signal metal electrode (9) is arranged on one side of the optical beam splitting structure (5) opposite to the two output ends; the grounding metal electrode (10) is arranged on one side of the optical beam splitting structure (5) with the two output ends thereof being opposite to each other; the silicon wedge waveguide optical mode conversion structure (6) is arranged in the bonding medium layer (7), and the ridge lithium niobate waveguide (8), the signal metal electrode (9) and the grounding metal electrode (10) are arranged above the bonding medium layer.
2. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the mode converter (2) is capable of implementing a low order mode (TE)0，TM0) Conversion into higher order modes, the smaller end waveguide width W of the mode converter (2)1Is of a single-mode width, which means that the waveguide can only stably transmit TE under the width0，TM0Mode, larger end waveguide width W of said mode converter (2)3Should be greater than TE1Mode cut-offWidth.
3. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the asymmetric directional coupler (3) can convert TE in the lower waveguide arm1Mode coupling into the upper waveguide arm and conversion to TE0Mode(s).
4. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the bonding dielectric layer (7) is benzocyclobutene.
5. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the signal metal electrode (9) and the grounding metal electrode (10) are made of gold.
6. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the substrate layer (1) is made of silicon dioxide, and the ridge-shaped lithium niobate waveguide (8) is made of lithium niobate.
7. The mode-switching-based lithium niobate-on-silicon polarization-independent optical modulator of claim 1, wherein: the mode converter (2), the asymmetric directional coupler (3), the silicon-based optical waveguide structure (4), the optical beam splitting structure (5) and the silicon wedge waveguide optical mode conversion structure (6) are all made of Si.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112764161A (en) * | 2021-01-12 | 2021-05-07 | 电子科技大学 | Novel 3um intermediate infrared band is based on slit waveguide polarization irrelevant graphite alkene electro-optic modulator structure |
| CN113777706A (en) * | 2021-08-11 | 2021-12-10 | 华中科技大学 | Polarization-independent reflective optical filter based on X-cut lithium niobate thin film |
| CN115291334A (en) * | 2022-08-01 | 2022-11-04 | 吉林大学 | TE modulated by silicon-based PIN 0 /TE 1 Multimode electro-optical switch |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112764161A (en) * | 2021-01-12 | 2021-05-07 | 电子科技大学 | Novel 3um intermediate infrared band is based on slit waveguide polarization irrelevant graphite alkene electro-optic modulator structure |
| CN113777706A (en) * | 2021-08-11 | 2021-12-10 | 华中科技大学 | Polarization-independent reflective optical filter based on X-cut lithium niobate thin film |
| CN113777706B (en) * | 2021-08-11 | 2022-09-20 | 华中科技大学 | Polarization-independent reflective optical filter based on X-cut lithium niobate thin film |
| CN115291334A (en) * | 2022-08-01 | 2022-11-04 | 吉林大学 | TE modulated by silicon-based PIN 0 /TE 1 Multimode electro-optical switch |
| CN115291334B (en) * | 2022-08-01 | 2024-04-19 | 吉林大学 | TE modulated by silicon-based PIN0/TE1Multimode electro-optical switch |
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Application publication date: 20200804 |