CN206497266U - A kind of LiNbO_3 film QPSK optical modulators - Google Patents
A kind of LiNbO_3 film QPSK optical modulators Download PDFInfo
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- CN206497266U CN206497266U CN201621155126.7U CN201621155126U CN206497266U CN 206497266 U CN206497266 U CN 206497266U CN 201621155126 U CN201621155126 U CN 201621155126U CN 206497266 U CN206497266 U CN 206497266U
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Abstract
The utility model discloses a kind of LiNbO_3 film QPSK optical modulators, including：Quartz substrate chip, LiNbO_3 film, optical waveguide, metal film electrode and Metal Packaging shell.The beneficial effects of the utility model are as follows：1) curved waveguide length and traveling wave electrode length are shortened, DC-offset compensation electrode is eliminated, the miniaturization of lithium niobate QPSK optical modulators is realized；2) microwave refractometer rate and the matched well of optical waveguide index are realized, the modulation bandwidth of lithium niobate QPSK optical modulators is improved as the base wafer of lithium niobate monocrystal film using the quartz material of low-k；3) DC-offset compensation electrode is eliminated, the signal transacting complexity of lithium niobate QPSK optical modulators is reduced；4) utilization rate of LiNbO_3 film wafer is higher, reduces the manufacturing cost of LiNbO_3 film QPSK optical modulators.
Description
Technical field
The present invention relates to the technologies such as the technical field of optical fiber communication such as ultrahigh speed/extra long distance optic communication, coherent light communication neck
Domain, more particularly to a kind of LiNbO_3 film QPSK optical modulators.
Background technology
QPSK (QPSK) technology with advantages such as its EO-1 hyperion utilization rate, high s/n ratio and high dispersion tolerances, into
Particularly realize that high bit rate transmission is adopted extensively in dense wave division multipurpose (DWDM) system for optical transport technology in recent years
Modulation format.
The development of lithium niobate MZ modulators based on lithium columbate crystal pockels electro optic effect is early in Networks of Fiber Communications
Highly important effect is served in the development of phase.Sent out although with directly modulated lasers or using the light of electroabsorption modulator technology
Penetrate machine and certain advantage is embodied in module size and cost, but its relatively low extinction ratio limits the property of this optical module always
Energy and its application in long-distance optical fiber communication system.On the contrary, MZ modulators are easier to realize higher amplitude extinction ratio, because
This is widely used to the communication of high speed/long-distance optical fiber at present using the QPSK optical modulators based on lithium niobate MZ modulator structures
System and coherent fiber communication system.
Although lithium niobate QPSK optical modulators are at present in high speed/long-distance optical fiber communication system and coherent fiber communication system
Extensive use has been obtained in system, but larger device size limits lithium niobate QPSK optical modulators and led in coherent light of future generation
Application in communication network.
The longer size of existing lithium niobate QPSK optical modulators mostlys come from the following aspects：
1) larger curved waveguide size：Titanium diffusion technique system is used optical waveguide in lithium niobate QPSK optical modulators more
Standby, the refringence of titanium diffused optical waveguide is smaller, and too small bending curvature radius can cause excessive bending loss, therefore in order to
Device bend loss is reduced, the Y-branch part of existing lithium niobate QPSK optical modulators is frequently with longer bending length；
2) longer traveling wave electrode：On the one hand the electrode design of lithium niobate QPSK optical modulators needs to meet high modulation
Width, on the other hand need to meet low half-wave voltage, in order to realize high modulation bandwidth, existing lithium niobate QPSK optical modulators frequently with compared with
Big traveling wave electrode spacing, but lithium niobate optical modulator half-wave voltage be proportional to traveling wave electrode spacing, be inversely proportional to traveling wave electricity
Pole length, therefore in order to realize the low half-wave voltage of lithium niobate QPSK optical modulators, traveling wave electrode often make by the longer electric light of selection
With distance (i.e. electrode length)；
3) use of Dc bias electrode：Existing lithium niobate QPSK optical modulators are to realize high modulation bandwidth, it is necessary to used
Silica cushion is to reach the matched well of microwave refractometer rate and optical waveguide index, but the introducing of silica cushion
Also bring Dc bias drift serious problems, cause lithium niobate QPSK optical modulators must use integrated light detector and
Dc bias electrode is drifted about with real-Time Compensation Dc bias, it is ensured that optical modulator is constantly in best operating point.Dc bias electricity
The use of pole undoubtedly also increases the length of existing lithium niobate QPSK optical modulators.
In addition, the longer device size of existing lithium niobate QPSK optical modulators, there is also the niobium in chip manufacturing proces
The problem of sour lithium crystal round utilization ratio is relatively low, causes a large amount of wastes of lithium niobate wafer, adds existing lithium niobate QPSK light and adjusts
The manufacturing cost of device processed.
The content of the invention
It is an object of the invention to provide a kind of LiNbO_3 film QPSK optical modulators, to solve present in above-mentioned prior art
Problem.
To realize the purpose of the present invention, the invention provides a kind of LiNbO_3 film QPSK optical modulators, including：Quartzy base
Bottom chip, LiNbO_3 film, optical waveguide, metal film electrode.The quartz substrate chip is optical grade, the stone of twin polishing
English chip, its thickness is 0.1mm to 2mm；The LiNbO_3 film be optical grade, with mono-crystalline structures, it is tangential be X cut Y pass, it is thick
Spend for 0.1 μm to 20 μm；The optical waveguide is titanium diffused waveguide, and its diffusion breadth is 0.1 μm to 10 μm, and diffusion depth is
0.1 μm to 10 μm；The metal film electrode has traveling-wave structure, thickness at 0.1 μm to 30 μm.
Further, the invention provides a kind of Metal Packaging for being used to carry out the encapsulation of LiNbO_3 film QPSK optical modulators
Shell, including：Metal Packaging shell housing, radio frequency (RF) coaxial connector, phase-modulator pin, optic module, optical fiber.The gold
Belong to and LiNbO_3 film chip is loaded in encapsulating package housing；The radio frequency (RF) coaxial connector is loaded in Metal Packaging shell housing
On outer wall, the metal film electrode on the pin of radio frequency (RF) coaxial connector and LiNbO_3 film chip is connected by bonding wire
Connect；The phase-modulator pin is connected by bonding wire with the metal film electrode on LiNbO_3 film chip；The light
Input of the fiber module respectively with the optical waveguide of LiNbO_3 film is bonding with output end progress coupling；The optical fiber is sealed from metal
Tubulature shell housing both sides are passed.
Compared with prior art, beneficial effects of the present invention are,
1) curved waveguide length and traveling wave electrode length are shortened, DC-offset compensation electrode is eliminated, realizes niobic acid
The miniaturization of lithium QPSK optical modulators；
2) microwave refractometer is realized as the base wafer of lithium niobate monocrystal film using the quartz material of low-k
The matched well of rate and optical waveguide index, improves the modulation bandwidth of lithium niobate QPSK optical modulators；
3) DC-offset compensation electrode is eliminated, the signal transacting complexity of lithium niobate QPSK optical modulators is reduced；
4) utilization rate of LiNbO_3 film wafer is higher, reduces the manufacturing cost of LiNbO_3 film QPSK optical modulators.
Brief description of the drawings
Fig. 1 show the chip structure schematic diagram of existing lithium niobate QPSK optical modulators；
Fig. 2 show the chip cross-sectional structure schematic diagram of traveling wave electrode part in existing lithium niobate QPSK optical modulators；
Fig. 3 show the chip structure schematic diagram of LiNbO_3 film QPSK optical modulators proposed by the present invention；
Fig. 4 show the chip cross section of traveling wave electrode part in LiNbO_3 film QPSK optical modulators proposed by the present invention
Structural representation；
Fig. 5 show the encapsulating structure schematic diagram of LiNbO_3 film QPSK optical modulators proposed by the present invention；
In figure, 1. lithium niobate body material substrate chips；2. optical waveguide；3. metal film electrode；4. silica is buffered
Layer；5. quartzy base LiNbO_3 film chip；5-1. quartz substrate chips；5-2. LiNbO_3 film；6-1. Metal Packaging shells；6-
2. radio frequency (RF) coaxial connector；6-3. phase-modulator pins；6-4. optic module；6-5. optical fiber.
Embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment only to explain the present invention, be not intended to limit the present invention.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in this manual using belong to "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, part or module, component and/or combinations thereof.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.
Fig. 1 show the chip structure schematic diagram of existing lithium niobate QPSK optical modulators；Fig. 2 show existing lithium niobate
The chip cross-sectional structure schematic diagram of traveling wave electrode part in QPSK optical modulators；
The present invention proposes a kind of LiNbO_3 film QPSK optical modulators, by using with low-refraction, low-k
Quartz material as lithium niobate monocrystal film base wafer, can increase fiber waveguide refractive index it is poor, improve Electro-optical Modulation efficiency
And silica cushion need not be used, therefore the bending of lithium niobate QPSK optical modulator Y-branches part can be effectively reduced
Waveguide dimensions, shorten traveling wave electrode length, avoid Dc bias drift etc. caused by silica cushion, passing through and shorten bending
Waveguide length and traveling wave electrode length and remove DC-offset compensation electrode, realize the small-sized of lithium niobate QPSK optical modulators
Change.In addition, the diminution of LiNbO_3 film QPSK optical modulator chip sizes, can also lift the utilization of LiNbO_3 film wafer
Rate, reduces the manufacturing cost of LiNbO_3 film QPSK optical modulators.
As shown in Figure 3-Figure 5, LiNbO_3 film of embodiment of the present invention QPSK optical modulators include：Optical waveguide 2, metal foil
Membrane electrode 3, quartz substrate chip 5-1, LiNbO_3 film 5-2, Metal Packaging shell housing 6-1, radio frequency (RF) coaxial connector 6-2,
Phase-modulator pin 6-3, optic module 6-4, optical fiber 6-5,
Quartz substrate chip 5-1 is optical grade, the quartz wafer of twin polishing, and its thickness is 0.1mm to 2mm.
LiNbO_3 film 5-2 is optical grade, the LiNbO_3 film with mono-crystalline structures, and it tangentially cuts Y biographies for X, and thickness is
0.1 μm to 20 μm.
Optical waveguide 2 is titanium diffused waveguide, and its diffusion breadth is 0.1 μm to 10 μm, and diffusion depth is 0.1 μm to 10 μm.
Metal film electrode 3 is to be made with traveling-wave structure, thickness in 0.1 μm to 30 μm of gold or the metallic film such as aluminium
Electrode structure.
The Metal Packaging shell that the present embodiment also includes being used to carry out the encapsulation of LiNbO_3 film QPSK optical modulators includes：Gold
Belong to encapsulating package housing 6-1, radio frequency (RF) coaxial connector 6-2, phase-modulator pin 6-3, optic module 6-4, optical fiber 6-5, its
Middle Metal Packaging shell housing 6-1 uses stainless steel base material, radio frequency (RF) coaxial connector 6-2 using SMA, K, V, GPO,
The coaxial connectors such as GPPO, G3PO.
LiNbO_3 film chip 5-2 is loaded in Metal Packaging shell housing 6-1.
Radio frequency (RF) coaxial connector 6-2 is loaded on Metal Packaging shell housing 6-1 outer wall, by bonding wire by radio frequency
Coaxial connector 6-2 pin is connected with the metal film electrode 3 on LiNbO_3 film chip.
Phase-modulator pin 6-3 is connected by bonding wire with the metal film electrode 3 on LiNbO_3 film chip.
The input of LiNbO_3 film chip 5-2 optical waveguide 2 is coupled with optic module 6-4 respectively with output end
Bonding, optical fiber 6-5 is passed from Metal Packaging shell housing 6-1 both sides.
The manufacture method of above-mentioned LiNbO_3 film QPSK optical modulators is as follows：
1) using the titanium bar figure needed for making qpsk modulator optical waveguide figure, titanium on optical grade lithium niobate crystal chip
Bar width is at 0.1 μm to 10 μm, and titanium bar thickness is in 10nm to 200nm；
2) optical waveguide of lithium niobate qpsk modulator is made, waveguide diffusion breadth is 0.1 μm to 10 μm, and diffusion depth is
0.1 μm to 10 μm；
3) use and be bonded lithium niobate crystal chip with quartz substrate chip；
4) lithium niobate crystal chip in quartz substrate is thinned, thickness is at 0.1 μm to 20 μm；
5) metal film electrode of QPSK optical modulators is made in LiNbO_3 film upper surface, thickness of metal film is in 0.1 μ
M to 30 μm；
6) LiNbO_3 film QPSK optical modulator chips optical waveguide input and output end pass through optic module
Coupling bonding is carried out, is positioned in Metal Packaging shell housing；
7) radio frequency (RF) coaxial connector is loaded, and the metal film electrode on LiNbO_3 film chip is connected with RF coaxial
Pin, the phase-modulator pin of device carry out bonding wire；
8) air-tight packaging of LiNbO_3 film QPSK optical modulators is completed.
Described above is only the preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (3)
1. a kind of LiNbO_3 film QPSK optical modulators, it is characterised in that including：Optical waveguide (2), metal film electrode (3),
Quartz substrate chip (5-1), LiNbO_3 film (5-2), the quartz substrate chip (5-1) are optical grade, the stone of twin polishing
English chip, its thickness be 0.1mm to 2mm, the LiNbO_3 film (5-2) be optical grade, with mono-crystalline structures, it is tangential be that X cuts Y
Pass, thickness is 0.1 μm to 20 μm, the optical waveguide (2) is titanium diffused waveguide, its diffusion breadth is 0.1 μm to 10 μm, diffusion
Depth is 0.1 μm to 10 μm, and the metal film electrode (3) has traveling-wave structure, thickness at 0.1 μm to 30 μm；
The LiNbO_3 film QPSK optical modulators also include the metal for being used to carry out the encapsulation of LiNbO_3 film QPSK optical modulators
Encapsulating package, the Metal Packaging shell includes：Metal Packaging shell housing (6-1), radio frequency (RF) coaxial connector (6-2), phase
Modulator pin (6-3), optic module (6-4), optical fiber (6-5), radio frequency (RF) coaxial connector (6-2) are loaded into Metal Packaging shell
On the outer wall of housing (6-1), the pin of radio frequency (RF) coaxial connector (6-2) is connected by bonding wire with metal film electrode (3),
Phase-modulator pin (6-3) is connected by bonding wire with metal film electrode (3), the optics ripple of LiNbO_3 film (5-2)
The input for leading (2) is Nian Jie with optic module (6-4) coupling respectively with output end, and optical fiber (6-5) is from Metal Packaging shell housing
(6-1) both sides are passed.
2. LiNbO_3 film QPSK optical modulators according to claim 1, it is characterised in that the Metal Packaging shell shell
Body (6-1) uses stainless steel base material, and radio frequency (RF) coaxial connector (6-2) is coaxially connected using SMA, K, V, GPO, GPPO, G3PO
Connect device.
3. LiNbO_3 film QPSK optical modulators according to claim 1, it is characterised in that the metal film electrode
(3) electrode structure being made for gold or aluminum metal film.
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| CN201621155126.7U CN206497266U (en) | 2016-10-31 | 2016-10-31 | A kind of LiNbO_3 film QPSK optical modulators |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108020939A (en) * | 2016-10-31 | 2018-05-11 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film QPSK optical modulators and its manufacture method |
| JP2019174587A (en) * | 2018-03-28 | 2019-10-10 | 住友大阪セメント株式会社 | Optical waveguide element module |
| WO2022138845A1 (en) * | 2020-12-23 | 2022-06-30 | 住友大阪セメント株式会社 | Optical waveguide element, optical modulator, optical modulation module, and optical transmission device |
| CN116760479A (en) * | 2023-08-14 | 2023-09-15 | 浙江九州量子信息技术股份有限公司 | Film lithium niobate phase decoding photon chip and quantum key distribution system |
-
2016
- 2016-10-31 CN CN201621155126.7U patent/CN206497266U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108020939A (en) * | 2016-10-31 | 2018-05-11 | 天津领芯科技发展有限公司 | A kind of LiNbO_3 film QPSK optical modulators and its manufacture method |
| JP2019174587A (en) * | 2018-03-28 | 2019-10-10 | 住友大阪セメント株式会社 | Optical waveguide element module |
| JP7059749B2 (en) | 2018-03-28 | 2022-04-26 | 住友大阪セメント株式会社 | Optical waveguide element module |
| WO2022138845A1 (en) * | 2020-12-23 | 2022-06-30 | 住友大阪セメント株式会社 | Optical waveguide element, optical modulator, optical modulation module, and optical transmission device |
| CN116760479A (en) * | 2023-08-14 | 2023-09-15 | 浙江九州量子信息技术股份有限公司 | Film lithium niobate phase decoding photon chip and quantum key distribution system |
| CN116760479B (en) * | 2023-08-14 | 2023-11-24 | 浙江九州量子信息技术股份有限公司 | Film lithium niobate phase decoding photon chip and quantum key distribution system |
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