CN114488580A - High-speed electro-optical modulator based on silicon nitride/organic polymer mixed waveguide structure - Google Patents

High-speed electro-optical modulator based on silicon nitride/organic polymer mixed waveguide structure Download PDF

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CN114488580A
CN114488580A CN202011266224.9A CN202011266224A CN114488580A CN 114488580 A CN114488580 A CN 114488580A CN 202011266224 A CN202011266224 A CN 202011266224A CN 114488580 A CN114488580 A CN 114488580A
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waveguide
organic polymer
silicon nitride
optical
electro
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CN114488580B (en
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张赞允
张凯鑫
程倩
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Tianjin Polytechnic University
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/061—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material
    • G02F1/065—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on electro-optical organic material in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/14—Mode converters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/361—Organic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12038—Glass (SiO2 based materials)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12152—Mode converter

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Abstract

The invention discloses a high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure, which comprises a 1 multiplied by 2 silicon nitride waveguide MMI coupler, a silicon nitride/organic polymer longitudinal adiabatic spot-size converter, an organic polymer optical waveguide phase shifter and a GSG coplanar waveguide traveling wave electrode, and is characterized in that: the organic polymer optical waveguide phase shifter in the device can realize the conversion from optical phase modulation to optical intensity modulation through the light transmission between waveguides of the longitudinal adiabatic spot size converter and the light splitting/beam combining function of the 1 multiplied by 2 silicon nitride waveguide MMI coupler; the high-speed conversion from the electric signal to the optical signal can be realized through the high-speed driving of the electric signal on the GSG coplanar waveguide traveling wave electrode; the invention provides a solution for a silicon-based electro-optic modulator with high bandwidth and low insertion loss based on a silicon nitride/organic polymer waveguide hybrid integration technology, and provides possibility for a silicon nitride waveguide-based photoelectric integration scheme and a silicon-based three-dimensional photoelectric integration scheme.

Description

High-speed electro-optical modulator based on silicon nitride/organic polymer mixed waveguide structure
Technical Field
The invention relates to the technical field of silicon-based photoelectron integration and optical communication, in particular to a high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure.
Background
In recent years, as the process nodes of integrated circuits are continuously reduced, the problem of bottleneck of electrical interconnection in chips is increasingly highlighted, and the problems of power consumption delay and the like caused by electrical interconnection in chips seriously restrict the further improvement of the performance of the chips; bottlenecks in electrical interconnections exist not only inside chips, but also between chips, boards, and cabinets. As the number of computer processors increases, the total bandwidth for data communications from core to core also continues to increase. It is widely believed that the input-output bandwidth for interconnections between processors in future high performance computers will reach the order of Tb/s. Traditional electrical I/O, subject to size and power consumption, has been unable to meet the bandwidth requirements of ultra-large capacity data exchange. In addition, with the rise of emerging industries such as big data, cloud computing, internet of things, 5G communication and the like, people have an increasing demand for data communication bandwidth. Statistically, the total data transmission requirement of the data center in 2021 will reach 20.6zettabytes, and more than 70% of data exchange is performed inside the data center. It follows that conventional electrical interconnections suffer from insurmountable bandwidth and power consumption bottlenecks, which have become significant obstacles limiting computer performance as well as communication system bandwidth. Higher speed interconnect schemes and higher speed optical interconnect-specific optoelectronic devices are urgently needed.
The electrooptical modulator is a core optoelectronic device of complex optical communication/sensing systems such as an optical communication network, a microwave photonic system and the like, plays an important role in electrooptical high-speed conversion, has important application in the traditional fields such as large-scale data center active optical cables, high-performance computer systems and the like, can be used in the national defense and military fields such as electric field sensing, microwave optical phased array radars, fiber optic gyroscope inertia technology and the like, and has extremely high research value and important significance. In general, the modulation parameter of an electro-optical modulator is the intensity of light waves. For an ideal intensity electro-optic modulator, it should have the advantages of low optical loss, low driving voltage, high bandwidth, high linearity, small size and low manufacturing cost. In recent years, with the rise of research in silicon-based optoelectronics, there has been an increasing interest and rapid progress in the research of silicon-based electro-optic modulators. As a high-speed electro-optical conversion device, the silicon-based electro-optical modulator has the advantages of compact waveguide structure, high integration level, CMOS (complementary metal oxide semiconductor) process compatibility and the like, and has great success in optical transceiving modules and optical interconnection for short-distance data communication application.
Because the Pockels effect and the Kerr effect of the silicon material are weak, the existing silicon-based electro-optical modulator is mainly based on an SOI optical waveguide structure and realizes the silicon-based electro-optical modulation function by utilizing the plasma dispersion effect of the silicon. The plasma dispersion effect is a physical effect based on scattering and absorption of free carriers, which can be injected or extracted from a doped region through a specific electrical structure to cause a change in the refractive index of an optical waveguide region. In order to realize ultra-high-speed optical modulation, a mainstream silicon-based optical modulator usually adopts a PN junction phase shifter structure based on carrier depletion, and simultaneously adopts a micro-ring/micro-disk optical resonant cavity structure or a mach-zehnder interferometer structure to realize light intensity modulation. After a decade of research and development, the performance of silicon-based electro-optical modulators has been continuously improved, and the silicon-based electro-optical modulators have made great progress in communication speed, insertion loss, power consumption and the like, and some reported works even have achieved performance results comparable to that of commercial lithium niobate modulators. However, due to the natural light absorption characteristic of the plasma dispersion effect and the nonlinear response to the applied voltage, the existing silicon-based electro-optical modulator not only has large optical insertion loss, but also causes signal distortion when a higher-level modulation mode is adopted. In addition, since the dispersion effect of the plasma in silicon based on a carrier depletion mechanism is weak, a silicon-based electro-optical modulator (mainly referred to as a mach-zehnder electro-optical modulator) usually needs a larger phase shift arm length to achieve a sufficient modulation depth, and the larger phase shift length means a longer coplanar waveguide traveling wave electrode, so that the active transmission line structure of the modulator with the electrode microwave loss as the main bandwidth limitation faces a transmission bandwidth limit of about 50 GHz. Although the technical schemes of reducing PN junction series resistance by doping optimization, reducing driving capacitance by a single-drive push-pull structure, reducing electrode loss by adopting a copper electrode and a Ti/TiN/AlCu electrode material, reducing substrate microwave loss by a substrate removal technology and the like have been proved to be capable of effectively improving the microwave loss of a high-frequency downlink wave electrode, the technologies also have difficulty in fundamentally solving the problems of bandwidth bottleneck and performance compromise of the existing silicon-based electro-optical modulator.
In recent years, silicon-based hybrid electro-optic modulators with heterogeneous integrated nonlinear electro-optic materials have become a new and very active research area. The organic polymer electro-optic material is an excellent choice for the silicon-based hybrid electro-optic modulator due to the advantages of strong electro-optic coefficient (r33), ultra-fast response speed, low dispersion, easiness in integration and the like. By combining the super-strong light limiting characteristic of the silicon-based waveguide structure and the strong electro-optic effect of the organic polymer electro-optic material, the hybrid silicon-based electro-optic modulator is proved by theory and experiments to be capable of realizing ultra-low voltage, ultra-small size and ultra-high bandwidth electro-optic modulation. Compared with a silicon waveguide, the silicon nitride waveguide not only has the advantages of ultralow loss, ultra-compactness, CMOS process compatibility and the like, but also has the advantages of similar refractive index to an organic polymer, better thermal stability and the like which are not possessed by the silicon waveguide. Silicon nitride waveguides are therefore considered well suited for the implementation of hybrid electro-optic modulators integrated with organic polymer materials. In addition, although silicon nitride is an excellent choice for passive optical devices, doping cannot be achieved, and thus the field of active devices is still blank. The silicon nitride waveguide and the organic polymer material are adopted to realize the mixed electro-optic modulation, which has great significance for the silicon nitride-based photoelectric integration scheme, and meanwhile, due to the characteristic of the compatibility of the CMOS post-process of the silicon nitride waveguide, the development of the silicon nitride-based photoelectric integration is hopeful to provide an excellent technical scheme for the three-dimensional integration of silicon-based photoelectrons.
Therefore, there is a need in the art to provide a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure, which achieves higher performance, lower manufacturing cost, and higher thermal stability.
Disclosure of Invention
In view of the above, the present invention provides a high-speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
the high-speed electro-optical modulator based on the silicon nitride/organic polymer mixed waveguide structure comprises two 1 x 2 silicon nitride waveguide MMI couplers, four longitudinal adiabatic spot size converters, two organic polymer optical waveguide phase shifters and a GSG single-drive push-pull type coplanar waveguide traveling wave electrode, and is characterized in that: the two 1 × 2 silicon nitride waveguide MMI couplers are adopted to respectively perform light splitting/beam combining functions; the four longitudinal adiabatic spot size converters are adopted to realize the optical coupling between the silicon nitride waveguide and the organic polymer waveguide; two optical phase shift arms in the Mach-Zehnder modulator are formed by adopting the two organic polymer optical waveguide phase shifters to realize optical phase modulation; and a GSG single-drive push-pull type coplanar waveguide traveling wave electrode is adopted to realize the loading of microwave electric signals and the electrical drive of devices.
Preferably, the four longitudinal adiabatic spot size converters are formed by longitudinally overlapping inverted cone-shaped silicon nitride waveguides positioned on the lower layer of the chip and organic polymer waveguides positioned on the upper layer of the chip, and the two waveguide core layers are isolated by a layer of silicon dioxide; wherein the two longitudinal adiabatic spot size converters are connected with two output waveguides of the 1 × 2 silicon nitride waveguide MMI coupler for realizing the light splitting function, so as to realize the light adiabatic transmission from the lower silicon nitride waveguide to the upper organic polymer waveguide; and the other two longitudinal adiabatic spot size converters are connected with two input waveguides of the 1 multiplied by 2 silicon nitride waveguide MMI coupler for realizing the function of optical beam combination, so that the optical adiabatic transmission of light from the upper organic polymer waveguide to the lower silicon nitride waveguide is realized.
Preferably, the silicon nitride waveguide is etched by silicon nitride to form a ridge waveguide structure, the organic polymer waveguide is etched by a silicon dioxide cladding layer and spin-coated by an organic polymer to form an inverted ridge waveguide structure, and the upper and lower alignment and overlapping of the silicon nitride waveguide and the organic polymer waveguide are realized by the alignment of a silicon dioxide etched groove and the silicon nitride ridge waveguide.
Preferably, the organic polymer waveguide is made of an organic polymer nonlinear electro-optic material, and the organic polymer nonlinear electro-optic material has a strong Pockels effect and can generate large change of the refractive index under the action of an electric field.
Preferably, the GSG single-drive push-pull coplanar waveguide traveling wave electrode is located above the silica cladding and on both sides of the two organic polymer inverted ridge waveguides, and polarization and refractive index change can be performed on the organic polymer material by applying voltage to the electrode, thereby realizing optical phase modulation in the organic polymer waveguides.
Preferably, the two organic polymer optical waveguide phase shifters can realize conversion from optical phase modulation to optical intensity modulation by light transmission between waveguides of four longitudinal adiabatic spot size converters and light splitting/beam combining functions of two 1 × 2 silicon nitride waveguide MMI couplers, and can realize high-speed conversion from microwave electrical signals to optical signals by high-speed driving of electrical signals on a GSG single-drive push-pull coplanar waveguide traveling wave electrode, thereby realizing high-speed electro-optical intensity modulation.
According to the technical scheme, compared with the prior art, the invention discloses a high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure, so that the active light modulation function and the passive light transmission function are completed by different material waveguides; in addition, the adiabatic light transmission between the silicon nitride waveguide and the organic polymer waveguide is realized by adopting the longitudinal adiabatic spot size converter, so that the lossless optical connection between the organic polymer waveguide optical phase modulator and the silicon nitride waveguide is realized. The technical characteristics make an electro-optical modulator with low insertion loss, high transmission bandwidth, high linearity and low manufacturing cost possible.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure provided by the invention.
Fig. 2 is a cross-sectional view of a waveguide structure of a longitudinal adiabatic speckle converter of a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure, which is provided by the invention, and the cross-section is a-a' in fig. 1.
Fig. 3 is a cross-sectional view of a phase shifter structure of a high-speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure, which is provided by the invention, and the cross section is B-B' in fig. 1.
Fig. 4 is a simulation result of a 100Gb/s non-return-to-zero (NRZ) optical modulation eye diagram implemented by using an embodiment of the present invention.
FIG. 5 is a simulation result of a 50Gbaud/s (100Gb/s) four-level pulse amplitude (PAM4) optical modulation eye diagram implemented by using an embodiment of the present invention.
Wherein: 101 is a 1 × 2 silicon nitride waveguide MMI coupler, 102 is a silicon nitride/organic polymer hybrid waveguide longitudinal adiabatic spot size converter, 103 is an organic polymer optical waveguide phase shifter, 104 is a GSG single-drive push-pull coplanar waveguide traveling wave electrode, 201 is an organic polymer waveguide, 202 is a silicon dioxide layer (an upper cladding layer of a silicon nitride waveguide and an isolation layer of the silicon nitride waveguide and the organic polymer waveguide), 203 is a silicon nitride waveguide, 204 is a silicon dioxide layer (a lower cladding layer of the silicon nitride waveguide), and 205 is a silicon substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure.
As shown in fig. 1, which is a schematic structural diagram of a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure, it can be seen that the high-speed electro-optical modulator mainly comprises a 1 × 2 silicon nitride waveguide MMI coupler (101), a longitudinal adiabatic spot-size converter (102), an organic polymer optical waveguide phase shifter (103), and a GSG single-drive push-pull coplanar waveguide traveling wave electrode (104), where the 1 × 2 silicon nitride waveguide MMI coupler (101) is used as an optical beam splitter at an input optical port and an optical beam combiner at an output optical port. When an optical signal enters the structure from an input optical port, the optical signal is split by a left 1X 2 silicon nitride waveguide MMI coupler (101), and the optical signal is transmitted from a silicon nitride waveguide (203) to an organic polymer waveguide (201) under the action of a longitudinal adiabatic spot size converter (102). In order to complete the phase modulation of the optical signal, a driving voltage is applied to a GSG push-pull type coplanar traveling wave electrode (104), the optical signal is subjected to phase modulation by utilizing the Pockels effect of an organic polymer waveguide, after the modulation is completed, the transmission of the optical signal from the organic polymer waveguide (201) to a silicon nitride waveguide (203) is completed through a right-side longitudinal adiabatic spot size converter (102), then the optical signal is combined through a 1 × 2 silicon nitride waveguide MMI coupler (101), and finally the modulated optical signal is output, so that the purpose of intensity modulation is achieved.
As shown in FIG. 2, which is a cross-sectional view of a longitudinal adiabatic spot size converter based on a silicon nitride/organic polymer hybrid waveguide, an optical signal is transmitted from a silicon nitride waveguide (203) to an organic polymer waveguide (201) through longitudinal optical coupling, wherein W is1、W2、h1、h2、h3、h4、h5、d1The parameters can be optimally designed.
As shown in FIG. 3, which is a cross-sectional view of the phase shifter structure of a high-speed electro-optic modulator based on a silicon nitride/organic polymer mixed waveguide structure, under the action of a driving voltage of a GSG coplanar waveguide traveling wave electrode (104), an optical signal changes phase in an organic polymer waveguide, wherein d2An optimized design can also be made.
In order to carry out preliminary simulation verification on the performance of a high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure, the method adopts the method that all components in the device are subjected toThe specific embodiment carries out simulation calculation, and finally carries out performance verification on the high-speed electro-optical modulator based on the silicon nitride/organic polymer mixed waveguide structure through an optoelectronic circuit-level simulation tool. In order to simulate and test the non-return-to-zero (NRZ) modulation of a high-speed Mach-Zehnder electro-optic modulator, a PRBS signal generator and an NRZ code generator are adopted to carry out code pattern input on the high-speed electro-optic modulator based on a silicon nitride/organic polymer mixed waveguide structure, and for testing the four-level pulse amplitude optical modulation (PAM4) modulation of the high-speed electro-optic modulator, a PRBS signal generator and a PAM4 code generator are adopted to carry out code pattern input on the high-speed electro-optic modulator based on the silicon nitride/organic polymer mixed waveguide structure. During simulation test, a continuous wave laser with the wavelength of 1550nm is connected in front of an input optical port, an output optical port is connected with a photoelectric detector, an optical signal is converted into an electric signal, and then an eye pattern result is output by an eye pattern analyzer. To simulate the optical port test bandwidth limit of existing oscilloscopes, we designed the bandwidth of the photodetector in the simulation to 65 GHz. FIG. 4 shows the NRZ modulation eye diagram result of 100Gb/s at 1550nm for a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure according to the invention, wherein the driving voltage swing of the modulator is 0 to 2V. From the simulation results, it can be seen that the extinction ratio and jitter of the eye pattern have better results at 100 Gb/s. FIG. 5 shows the result of PAM4 modulation eye diagram at 50Gbaud/s (100Gb/s) at 1550nm for a high-speed electro-optical modulator based on a silicon nitride/organic polymer hybrid waveguide structure according to the present invention, using four different driving voltage levels, 0.5 to 1.5V and 1 to 2V respectively. It should be noted that the above obtained eye diagram results are limited by the test bandwidth limit set in the simulation, and the dynamic performance of the device far exceeds the displayed eye diagram results. Furthermore, by making W pair1、W2、h1、h2、h3、h4、h5、d1、d2The parameters are optimized, the driving voltage swing is improved, and the high-speed electro-optic modulator with the silicon nitride/organic polymer mixed waveguide structure can be continuously improvedOverall performance.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in more detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit, concept and principle of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. A high-speed electro-optical modulator based on a silicon nitride/organic polymer mixed waveguide structure comprises two 1 x 2 silicon nitride waveguide MMI couplers (101), four longitudinal adiabatic spot size converters (102), two organic polymer optical waveguide phase shifters (103) and a GSG single-drive push-pull type coplanar waveguide traveling wave electrode (104), and is characterized in that: the two 1 × 2 silicon nitride waveguide MMI couplers (101) are adopted to respectively perform light splitting/beam combining functions; -using the four longitudinal adiabatic spot size converters (102) to achieve optical coupling between the silicon nitride waveguide (203) and the organic polymer waveguide (201); two optical phase shift arms in the Mach-Zehnder modulator are formed by the two organic polymer optical waveguide phase shifters (103) to realize optical phase modulation; a GSG single-drive push-pull type coplanar waveguide traveling wave electrode (104) is adopted to realize the loading of microwave electric signals and the electrical drive of the device.
2. A high speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure as claimed in claim 1 wherein: the four longitudinal adiabatic spot size converters (102) are formed by longitudinally overlapping silicon nitride waveguides (203) positioned on the lower layer of the chip and organic polymer waveguides (201) positioned on the upper layer of the chip, wherein the silicon nitride waveguides on the lower layer of the chip are of an inverted cone structure, and the core layers of the two layers of waveguides are isolated by a layer of silicon dioxide (202); wherein the two longitudinal adiabatic spot size converters are connected with two output waveguides of the 1 × 2 silicon nitride waveguide MMI coupler for realizing the light splitting function, so as to realize the light adiabatic transmission from the lower silicon nitride waveguide (203) to the upper organic polymer waveguide (201); and the other two longitudinal adiabatic spot size converters (102) are connected with two input waveguides of the 1X 2 silicon nitride waveguide MMI coupler which realizes the function of optical beam combination, and realize the optical adiabatic transmission of light from the upper organic polymer waveguide (201) to the lower silicon nitride waveguide (203).
3. A high speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure as claimed in claim 1 wherein: the silicon nitride waveguide (203) forms a ridge waveguide structure through silicon nitride etching, the organic polymer waveguide (201) forms an inverted ridge waveguide structure through silicon dioxide cladding etching and organic polymer spin coating, and the up-and-down alignment and overlapping of the silicon nitride waveguide (203) and the organic polymer waveguide (201) are realized through the alignment of a silicon dioxide etching groove and the silicon nitride waveguide.
4. A high speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure as claimed in claim 1 wherein: the organic polymer waveguide (201) is made of an organic polymer nonlinear electro-optic material, and the organic polymer nonlinear electro-optic material has a strong Pockels effect and can generate large change of refractive index under the action of an electric field.
5. A high speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure as claimed in claim 1 wherein: the GSG single-drive push-pull type coplanar waveguide traveling wave electrode (104) is positioned above the silicon dioxide cladding (202) and on two sides of the two organic polymer waveguides (201), and polarization and refractive index change can be performed on an organic polymer material through voltage applied to the electrode, so that optical phase modulation in the organic polymer waveguides is realized.
6. A high-speed electro-optic modulator based on a silicon nitride/organic polymer hybrid waveguide structure as claimed in claim 1, wherein: the two organic polymer optical waveguide phase shifters (103) can realize the conversion from optical phase modulation to optical intensity modulation through the light transmission among the waveguides of the four longitudinal adiabatic spot size converters (102) and the light splitting/beam combining function of the two 1 × 2 silicon nitride waveguide MMI couplers (101), and can realize the high-speed conversion from microwave electric signals to optical signals through the high-speed driving of electric signals on the GSG single-drive push-pull type coplanar waveguide traveling wave electrode (104), thereby realizing the high-speed electro-optical intensity modulation.
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