CN111308740A - High extinction ratio electro-optical intensity modulator - Google Patents
High extinction ratio electro-optical intensity modulator Download PDFInfo
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- 230000008033 biological extinction Effects 0.000 title claims abstract description 30
- 239000013307 optical fiber Substances 0.000 claims abstract description 65
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 8
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- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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Abstract
The invention discloses an electro-optical modulator with a high extinction ratio, which comprises a lithium niobate substrate, a U-shaped groove optical fiber fixing device, an input/output optical fiber and a cascade M-Z interferometer structure; the cascade M-Z interferometer structure comprises a cascade M-Z interference optical waveguide, a straight waveguide, a separated traveling wave electrode and a bias electrode; wherein the input optical fiber and the output optical fiber are panda type polarization maintaining optical fibers; the U-shaped groove optical fiber fixing device fixes the input optical fiber and the output optical fiber, so that the optical fibers are coupled and butted with the waveguide; the beam splitting coupling area of each stage of M-Z interferometer adopts a Y-branch waveguide structure, and a straight waveguide is added between the two stages of M-Z interferometers; coplanar metal traveling wave electrodes are manufactured on two sides of the waveguide of the M-Z interferometer, and separated bias electrodes are arranged. The invention greatly improves the extinction ratio of the device and provides a low-cost and integrated external modulator for the laser radar and optical fiber sensing high-extinction ratio optical pulse generation technology.
Description
Technical Field
The invention relates to an on-chip integrated electro-optical modulation device capable of realizing high extinction ratio optical pulse modulation, belonging to the application fields of photoelectrons, laser radars and optical fiber sensing.
Background
With the continuous promotion of the national information industrialization process, the laser radar and the optical fiber sensing are greatly developed and applied in the fields of national defense, energy, artificial intelligence and the like. The generation of laser pulses is a key technology of a laser radar and an optical fiber sensing system, and the signal-to-noise ratio and the resolution of the system can be improved by the laser pulses with high extinction ratio and narrow pulse width.
The commonly used optical pulse generation methods mainly include: the method mainly comprises the following steps of direct modulation and external modulation, wherein the direct modulation mainly refers to a narrow pulse laser, the pulse width can be realized from picoseconds to nanoseconds, the direct modulation is mainly used for a large laser radar system, the picosecond laser is expensive, and the technology is basically monopolized abroad; the optical fiber sensing technology mostly adopts an external modulation scheme, i.e. the combination of a laser and an external modulator, and the commonly used external modulator mainly comprises an acoustic optical modulator, an electro-optical modulator, a semiconductor optical amplifier and the like. The acousto-optic modulator and the semiconductor optical amplifier can obtain higher extinction ratio (more than 50dB), but are limited by working frequency, and the minimum pulse width of the generated optical pulse can only reach nanosecond level; the lithium niobate electro-optical modulator can realize the generation of picosecond pulse width optical pulses due to high electro-optical response frequency (more than 10GHz), has low cost and small volume, but the extinction ratio of the commercial electro-optical intensity modulator at present is about 20-30 dB, and can only meet the requirements of partial optical fiber sensing systems.
The high extinction ratio electro-optical modulator has important significance on the high-quality laser pulse generation technology by comprehensively considering factors such as technical difficulty, cost and the like, and is an urgent need of a high-performance laser radar and an optical fiber sensing system.
Disclosure of Invention
1. Objects of the invention
The invention aims to improve the resolution and extinction ratio of a laser radar and an optical fiber sensing system, thereby providing an electro-optical modulator with high extinction ratio based on a cascade Mach-Zehnder (M-Z) interference structure,
2. the technical scheme adopted by the invention
The invention discloses an electro-optic modulation method with high extinction ratio, which comprises a lithium niobate substrate, a U-shaped groove optical fiber fixing device, an input/output optical fiber and a cascade M-Z interferometer structure;
the cascade M-Z interferometer structure comprises a cascade M-Z interference optical waveguide, a straight waveguide, a separated traveling wave electrode and a bias electrode; wherein the input optical fiber and the output optical fiber are panda type polarization maintaining optical fibers; the U-shaped groove optical fiber fixing device fixes the input optical fiber and the output optical fiber, so that the optical fibers are coupled and butted with the waveguide; the beam splitting coupling area of each stage of M-Z interferometer adopts a Y-branch waveguide structure, and a straight waveguide is added between the two stages of M-Z interferometers; coplanar metal traveling wave electrodes are manufactured on two sides of the waveguide of the M-Z interferometer, and separated bias electrodes are arranged.
When the input optical fiber is aligned with the fixed axis of the input end of the preceding-stage M-Z interference waveguide, the slow axis of the input optical fiber, namely the connecting direction of the two cat eyes, is ensured to be aligned with the optical axis of the lithium niobate chip; in the transmission process of the preceding stage M-Z interference waveguide, the light beam keeps the polarization direction unchanged, enters the subsequent stage M-Z interference waveguide after passing through the cascade straight waveguide, and finally enters the output optical fiber through the fixed-axis coupling of the U-shaped groove optical fiber fixing device, wherein the fixed-axis principle is the same as the input coupling.
Furthermore, two M-Z interferometers and a section of straight waveguide and a section of traveling wave electrode are integrated on a lithium niobate chip.
Furthermore, the cascade M-Z interference optical waveguide adopts a lithium niobate optical waveguide of a proton exchange process.
Furthermore, the lithium niobate chip adopts an X-cut Y-pass type, and the optical axis is along the Z axis; when the optical fiber is coupled and butted with the waveguide, the slow axis of the optical fiber, namely the connecting direction of the two cat eyes, is ensured to be aligned with the optical axis of the waveguide.
Furthermore, each level of M-Z interference waveguide is composed of a beam splitting Y-branch waveguide, a transmission straight waveguide and a beam combining Y-branch waveguide, and the curvature of the beam splitting Y-branch waveguide is expressed by an ascending cosine function:
Z(y)＝[1-cos(πy/2)]h/2
the curved waveguide is depicted such that the ratio of the square of the transition region length L to the transition region height h is greater than or equal to 1000, i.e., L2/h≥1000。
Furthermore, symmetrical traveling wave electrodes and bias electrodes are designed on two sides of the transmission straight waveguide, and each group of electrodes comprises three electrodes: the middle part is a live wire, the two sides are grounded, and the M-Z interference waveguide and the electrode form an M-Z intensity modulation unit; when different voltages are applied to the live wire, the output light intensity of the M-Z intensity modulation unit changes, when the voltage is increased to half-wave voltage, the output light intensity reaches the minimum value, so that the bias electrode is controlled to enable the output of the M-Z intensity modulation unit to be the lowest point, an electric pulse signal is loaded to the live wire of the travelling wave electrode, the M-Z intensity unit outputs an optical pulse, the pulse width depends on the electric pulse signal, and the pulse extinction ratio is determined by the beam splitting ratio and the modulation depth of the M-Z intensity modulation unit.
3. Advantageous effects adopted by the present invention
(1) The invention integrates and manufactures two M-Z waveguides on a lithium niobate chip in order, and can continuously compress optical pulses through two-stage modulation, thereby realizing the generation of high extinction ratio pulses.
(2) The cascade M-Z structure not only can realize high extinction ratio modulation, but also can realize modulation and transmission of two electric signals with different frequencies.
(3) The proton exchange lithium niobate optical waveguide refractive index distribution and the coplanar electrode arrangement which are reasonably designed in the process can realize low insertion loss and high modulation bandwidth of the device, and the volume and the common intensity modulator are not obviously increased.
(4) The invention utilizes the excellent electro-optic effect of the lithium niobate crystal to orderly integrate the two M-Z interferometers and the straight waveguide on one chip, adopts the proton exchange technology, ensures the consistent polarization characteristics of the two interference arms, greatly improves the extinction ratio of the device, and provides a low-cost and integrated external modulator device for the light pulse generation technology in laser radar and optical fiber sensing.
Drawings
FIG. 1 is a schematic diagram of a high extinction ratio electro-optic modulator;
FIG. 2 is a schematic view of a U-shaped groove;
FIG. 3 is a schematic diagram of a Y-branch optical field transmission simulation;
FIG. 4 is a graph of output optical power of the M-Z intensity modulation unit as a function of voltage;
FIG. 5 is a schematic diagram of M-Z intensity modulation unit pulse generation.
1. The optical fiber laser comprises an input optical fiber, 2. a U-shaped groove optical fiber fixing device, 3. a lithium niobate chip, 4. a front stage M-Z interferometer waveguide, 5. a straight waveguide, 6. a rear stage M-Z interferometer waveguide, 7-1 and 7-2 are traveling wave electrodes, 8. a bias electrode, 9. an output optical fiber, 10. an output optical fiber, 11-1 and 11-2 are beam splitting points, 12-1 and 12-2 are beam closing points, 13-1 and 13-2 are live wires, and 14-1 and 14-2 are live wires.
Detailed Description
The technical solutions in the examples of the present invention are clearly and completely described below with reference to the drawings in the examples of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without inventive step, are within the scope of the present invention.
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1
As shown in fig. 1, the present embodiment includes an input optical fiber 1, an input end U-groove optical fiber fixing device 2, a lithium niobate chip 3, a preceding stage M-Z interference waveguide 4, a cascade straight waveguide 5, a subsequent stage M-Z interference waveguide 6, traveling wave electrodes 7-1 and 7-2, a bias electrode 8, an output end U-groove optical fiber fixing device 9, and an output optical fiber 10, which are sequentially arranged along a light beam transmission direction. The input optical fiber 1 is a panda type polarization maintaining optical fiber and is aligned with the input end fixed axis of the preceding stage M-Z interference waveguide 4 through the U-shaped groove optical fiber fixing device 2, the waveguide adopts an annealed proton exchange lithium niobate single-mode waveguide, and the lithium niobate chip 3 adopts an X-cut Y-transmission type, so that when the input optical fiber 1 is aligned with the input end fixed axis of the preceding stage M-Z interference waveguide 4, the slow axis (namely the direction of the connecting line of two cat eyes) of the input optical fiber 1 is ensured to be aligned with the Z axis (optical axis) of the lithium niobate chip 3. In the transmission process of the front-stage M-Z interference waveguide, the polarization direction of light beams is kept unchanged, the light beams enter the rear-stage M-Z interference waveguide 6 after passing through the cascade straight waveguide 5 with a specific length, and are finally coupled into the output optical fiber 10 through the U-shaped groove optical fiber fixing device 9 in a fixed-axis mode, and the fixed-axis principle is the same as that of input coupling.
The cascade M-Z interferometer structure consists of a front-stage M-Z interference waveguide, a cascade straight waveguide, a rear-stage M-Z interference waveguide, a symmetrical traveling wave electrode and a symmetrical offset electrode, and can realize the generation and shaping of optical pulses. Each level of M-Z interference waveguide consists of a beam splitting Y-branch waveguide, a transmission straight waveguide and a beam combining Y-branch waveguide, and the transmission loss of a Y-branch transition region needs to be considered. The transmission loss of the Y-branch optical waveguide is mainly composed of scattering loss and bending loss. Scattering loss is rayleigh scattering caused by optical inhomogeneity, which can be reduced by purchasing quality materials and controlling process quality. The bending loss depends first on the mode confinement and then on the curved shape and structure of the transmission waveguide, and a large number of experimental studies prove that the raised cosine function:
Z(y)＝[1-cos(πy/2)]h/2
the depicted curved waveguide, when the ratio of the square of the transition region length L to the transition region height h is greater than or equal to 1000(L2/h ≧ 1000), the loss caused by the waveguide curvature will become small. Fig. 3 shows a simulation diagram of optical field transmission of a Y-branch waveguide using a rising cosine curve as a transition region, and theoretically, the structure can achieve power equal division.
Symmetrical traveling wave electrodes and bias electrodes are designed on two sides of the transmission straight waveguide, and each group of electrodes comprises three electrodes: the middle is a live wire, the two sides are grounded, and the M-Z interference waveguide and the electrode form an M-Z intensity modulation unit. When different voltages are applied to the live wire, the output light intensity of the M-Z intensity modulation unit changes, as shown in fig. 4, when the voltage increases to 1V, the output light intensity reaches the minimum value (zero point), and in the simulation, the half-wave voltage is 1V. Therefore, the bias electrode is controlled to make the output of the M-Z intensity modulator unit be the lowest point (zero point), as shown in fig. 5, when an electric pulse signal is loaded on the line electrode live wire, the M-Z intensity modulator unit will output an optical pulse, the pulse width depends on the electric pulse signal, and the pulse extinction ratio is determined by the beam splitting ratio and the modulation depth of the M-Z intensity modulator unit.
Due to the bending of the Y branch, the transmission nonuniformity of the optical field in the waveguide is caused, so that a section of straight waveguide needs to be added behind the front-stage M-Z interference waveguide, the transmission mode field can be uniformly transmitted to the rear-stage M-Z interference waveguide, and uniform beam splitting is realized. By optimally designing the Y-branch waveguide, the extinction ratio of each stage of M-Z intensity modulation unit can reach more than 25dB, and the two stages of M-Z intensity modulation units are loaded with synchronous electric pulse signals with the same pulse width and repetition frequency, so that the optical pulse output with the extinction ratio larger than 50dB can be obtained.
In summary, the present invention can achieve laser pulse generation with extinction ratios greater than 50dB, with pulse widths and repetition rates dependent on electrical pulse parameter values. The defect that the bandwidths of the acousto-optic modulator and the semiconductor optical amplifier are insufficient is overcome, the characteristics of high extinction ratio, high integration degree and low cost are achieved, and the method has important significance for improving the performance of the optical fiber sensing and laser radar system. In addition, the high extinction electro-optical modulator can also be used in the technical fields of high-speed optical switches, microwave photon double-sideband modulation and the like.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. A high extinction ratio electro-optic modulator, characterized by: the device comprises a lithium niobate substrate, a U-shaped groove optical fiber fixing device, an input/output optical fiber and a cascade M-Z interferometer structure;
the cascade M-Z interferometer structure comprises a cascade M-Z interference optical waveguide, a straight waveguide, a separated traveling wave electrode and a bias electrode; wherein the input optical fiber and the output optical fiber are panda type polarization maintaining optical fibers; the U-shaped groove optical fiber fixing device fixes the input optical fiber and the output optical fiber, so that the optical fibers are coupled and butted with the waveguide; the beam splitting coupling area of each stage of M-Z interferometer adopts a Y-branch waveguide structure, and a straight waveguide is added between the two stages of M-Z interferometers; manufacturing coplanar metal traveling wave electrodes on two sides of a waveguide of the M-Z interferometer, and arranging separated bias electrodes;
when the input optical fiber is aligned with the fixed axis of the input end of the preceding-stage M-Z interference waveguide, the slow axis of the input optical fiber, namely the connecting direction of the two cat eyes, is ensured to be aligned with the optical axis of the lithium niobate chip; in the transmission process of the preceding stage M-Z interference waveguide, the light beam keeps the polarization direction unchanged, enters the subsequent stage M-Z interference waveguide after passing through the cascade straight waveguide, and finally enters the output optical fiber through the fixed-axis coupling of the U-shaped groove optical fiber fixing device, wherein the fixed-axis principle is the same as the input coupling.
2. The high extinction ratio electro-optic modulator of claim 1, wherein: two M-Z interferometers, a section of straight waveguide and a traveling wave electrode are integrated on a lithium niobate chip.
3. The high extinction ratio electro-optic modulator of claim 1, wherein: the cascade M-Z interference optical waveguide adopts a lithium niobate optical waveguide by a proton exchange process.
4. The high extinction ratio electro-optic modulator of claim 1, wherein: the lithium niobate chip adopts an X-cut Y-pass type, and the optical axis is along the Z axis; when the optical fiber is coupled and butted with the waveguide, the slow axis of the optical fiber, namely the connecting direction of the two cat eyes, is ensured to be aligned with the optical axis of the waveguide.
5. The high extinction ratio electro-optic modulator of claim 1, wherein: each level of M-Z interference waveguide is composed of a beam splitting Y-branch waveguide, a transmission straight waveguide and a beam combining Y-branch waveguide, and the curvature of the beam splitting Y-branch waveguide is expressed by an ascending cosine function:
Z(y)＝[1-cos(πy/2)]h/2
the curved waveguide is depicted such that the ratio of the square of the transition region length L to the transition region height h is greater than or equal to 1000, i.e., L2/h≥1000。
6. The high extinction ratio electro-optic modulator of claim 5, wherein: symmetrical traveling wave electrodes and bias electrodes are designed on two sides of the transmission straight waveguide, and each group of electrodes comprises three electrodes: the middle part is a live wire, the two sides are grounded, and the M-Z interference waveguide and the electrode form an M-Z intensity modulation unit; when different voltages are applied to the live wire, the output light intensity of the M-Z intensity modulation unit changes, when the voltage is increased to half-wave voltage, the output light intensity reaches the minimum value, so that the bias electrode is controlled to enable the output of the M-Z intensity modulation unit to be the lowest point, an electric pulse signal is loaded to the live wire of the travelling wave electrode, the M-Z intensity unit outputs an optical pulse, the pulse width depends on the electric pulse signal, and the pulse extinction ratio is determined by the beam splitting ratio and the modulation depth of the M-Z intensity modulation unit.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111610596A (en) * | 2020-07-13 | 2020-09-01 | 中国电子科技集团公司第四十四研究所 | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio |
| CN115199693A (en) * | 2022-09-16 | 2022-10-18 | 南京航空航天大学 | Optimize reentrant corner constitutional unit and panel |
| CN116719123A (en) * | 2023-08-10 | 2023-09-08 | 北京世维通科技股份有限公司 | Optical amplification integrated module and assembly method thereof |
| WO2024164793A1 (en) * | 2023-02-10 | 2024-08-15 | 华为技术有限公司 | Electro-optical modulator and transmitter |
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