CN111610596A - Double-drive M-Z optical single sideband modulator with high sideband suppression ratio - Google Patents
Double-drive M-Z optical single sideband modulator with high sideband suppression ratio Download PDFInfo
- Publication number
- CN111610596A CN111610596A CN202010668264.XA CN202010668264A CN111610596A CN 111610596 A CN111610596 A CN 111610596A CN 202010668264 A CN202010668264 A CN 202010668264A CN 111610596 A CN111610596 A CN 111610596A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- parallel
- straight
- coupling
- adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 61
- 230000001629 suppression Effects 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims description 161
- 238000005859 coupling reaction Methods 0.000 claims description 161
- 230000008878 coupling Effects 0.000 claims description 159
- 230000007704 transition Effects 0.000 claims description 39
- 238000006880 cross-coupling reaction Methods 0.000 claims description 38
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 11
- 230000001808 coupling effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 claims 7
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000035559 beat frequency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/5165—Carrier suppressed; Single sideband; Double sideband or vestigial
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12183—Ion-exchange
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a double-drive M-Z optical single sideband modulator with a high sideband suppression ratio, which comprises a substrate, an optical waveguide, a radio frequency electrode and a bias electrode, wherein the substrate is made of photoelectric materials, the optical waveguide comprises an input straight waveguide, an adjustable Y-branch waveguide, an upper arm waveguide, a lower arm waveguide, a beam combination area waveguide and an output straight waveguide, and the position of the substrate corresponding to the adjustable Y-branch waveguide is provided with the adjusting electrode. In the invention, the Y-branch waveguide is replaced by the adjustable Y-branch waveguide, the adjusting electrodes are correspondingly arranged, and the light splitting ratio is adjusted in the adjustable Y-branch waveguide, so that the influence of the non-ideal preparation process of the Y-branch waveguide device on the sideband suppression ratio is compensated, and the influence of the non-ideal half-wave voltage of the two-arm waveguide of the device and the non-ideal power distribution of the microwave hybrid coupler on the sideband suppression ratio can be compensated by adjusting the light splitting ratio, thereby improving the sideband suppression ratio of the optical single-sideband modulator.
Description
Technical Field
The invention relates to the field of optical single-sideband modulators, in particular to a double-drive M-Z optical single-sideband modulator with a high sideband suppression ratio.
Background
The optical fiber wireless communication technology is an effective solution for ultra-wideband wireless access and is also an important application field of microwave photonics. In an optical fiber wireless communication system, due to an optical fiber dispersion effect, millimeter wave components generated by upper and lower optical sidebands and carrier beat frequency of a traditional double-sideband modulation technology generate different phase differences along with transmission distance, so that signal periodicity is attenuated, the transmission distance of the optical fiber communication system is greatly limited, and the single-sideband modulation technology is developed to solve the problem. The optical single sideband modulation signal can be generated by a double sideband modulation signal through an optical filter or directly modulated by an optical single sideband modulator, and in the single sideband modulator, the device structure is mainly a double parallel M-Z modulator (Mach Zehnder modulator) and a double drive M-Z modulator.
As shown in fig. 1, the conventional dual-drive M-Z modulator includes a substrate 1, an optical waveguide, a radio frequency electrode 3 and a bias electrode 4, the optical waveguide includes an input straight waveguide 20, a Y-branch waveguide 21, an upper arm waveguide 23, a lower arm waveguide 24, a beam combination region waveguide 25 and an output straight waveguide 26, the sideband suppression ratio of the output optical single-sideband modulation signal is related to the optical power of the upper and lower arm waveguides of the modulator and the modulation depth of the two arm signals, and ideally, the optical power in the upper and lower arm waveguides is equal and the modulation depth of the two arm signals is equal, at this time, the modulator can completely suppress the +1 order or-1 order sideband in the output signal. However, in practice, the optical power of the upper and lower waveguides and the modulation depth of the upper and lower waveguide signals are affected by the processing technology of the waveguides and the electrodes and the power distribution ratio of the microwave hybrid coupler, and the sideband suppression ratio of the output signal is generally low, thereby affecting the transmission quality of the signal.
Disclosure of Invention
The invention provides a design scheme of a double-drive M-Z optical single sideband modulator with a high sideband suppression ratio.
The technical scheme of the invention is as follows:
a double-drive M-Z optical single sideband modulator with high sideband suppression ratio comprises a substrate, an optical waveguide, a radio frequency electrode and a bias electrode, wherein the substrate is made of photoelectric materials, the optical waveguide comprises an input straight waveguide, an adjustable Y-branch waveguide, an upper arm waveguide, a lower arm waveguide, a beam combination area waveguide and an output straight waveguide, and an adjusting electrode is arranged at the position, corresponding to the adjustable Y-branch waveguide, of the substrate; the adjustable Y-branch waveguide comprises a transition section waveguide, an upper cross coupling waveguide and a lower cross coupling waveguide, wherein a first end of the transition section waveguide is connected with the input straight waveguide, a second end of the transition section waveguide is respectively connected with first ends of the upper cross coupling waveguide and the lower cross coupling waveguide, a second end of the upper cross coupling waveguide is connected with a first end of an upper arm waveguide, a second end of the lower cross coupling waveguide is connected with a first end of a lower arm waveguide, a second end of the upper arm waveguide and a second end of the lower arm waveguide are respectively connected with two input ends of a beam combination area waveguide, and an output end of the beam combination area waveguide is connected with the output straight waveguide; the adjusting electrode is used for applying voltage to change the ratio of the output light power of the upper cross-coupled waveguide and the lower cross-coupled waveguide, and the sideband suppression ratio of output signals is improved.
Further, the substrate is a Z-cut lithium niobate substrate, and the radio frequency electrode comprises a first radio frequency electrode, a second radio frequency electrode, a first ground electrode, a second ground electrode and a third ground electrode; the first ground electrode is arranged on one side of the upper arm waveguide far away from the lower arm waveguide, the second ground electrode is arranged between the upper arm waveguide and the lower arm waveguide, the third ground electrode is arranged on one side of the lower arm waveguide far away from the upper arm waveguide, the first radio-frequency electrode is covered on the upper arm waveguide, and the second radio-frequency electrode is covered on the lower arm waveguide;
the bias electrodes comprise three first bias electrodes and three second bias electrodes, one first bias electrode covers the upper arm waveguide, the other two first bias electrodes are respectively arranged on two sides of the lower arm waveguide, and the three first bias electrodes are mutually and electrically connected; one second bias electrode covers the lower arm waveguide, the other two second bias electrodes are respectively arranged on two sides of the upper arm waveguide, and the three second bias electrodes are electrically connected with each other.
Further, the upper cross-coupling waveguide comprises an upper input connection waveguide, an upper parallel coupling straight waveguide and an upper output connection waveguide, wherein a first end of the upper parallel coupling straight waveguide is connected with a second end of the transition section waveguide through the upper input connection waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel coupling straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a first adjusting electrode and a second adjusting electrode, the first adjusting electrode is covered on the upper input connecting waveguide and the upper parallel coupling straight waveguide, and the second adjusting electrode is covered on the lower input connecting waveguide and the lower parallel coupling straight waveguide.
Further, the upper cross-coupling waveguide comprises an upper input connection waveguide, an upper parallel adjustment straight waveguide, an upper coupling connection waveguide, an upper parallel coupling straight waveguide and an upper output connection waveguide, wherein a first end of the upper parallel adjustment straight waveguide is connected with a second end of the transition section waveguide through the upper input connection waveguide, a second end of the upper parallel adjustment straight waveguide is connected with a first end of the upper parallel coupling straight waveguide through the upper coupling connection waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel adjusting straight waveguide, a lower coupling connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel adjusting straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, the second end of the lower parallel adjusting straight waveguide is connected with the first end of the lower parallel coupling straight waveguide through the lower coupling connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide;
the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide are parallel to each other, and the distance between the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide is equal to the distance between the upper arm waveguide and the lower arm waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a first adjusting electrode and a second adjusting electrode, the first adjusting electrode covers the upper parallel adjusting straight waveguide, and the second adjusting electrode covers the lower parallel adjusting straight waveguide.
Further, the substrate is an X-cut lithium niobate substrate, and the radio frequency electrode comprises a first radio frequency electrode, a second radio frequency electrode, a first ground electrode, a second ground electrode and a third ground electrode; the first ground electrode is arranged on one side, away from the lower arm waveguide, of the upper arm waveguide, the second ground electrode is arranged between the upper arm waveguide and the lower arm waveguide, the third ground electrode is arranged on one side, away from the upper arm waveguide, of the lower arm waveguide, the first radio-frequency electrode is arranged between the upper arm waveguide and the first ground electrode, and the second radio-frequency electrode is arranged between the lower arm waveguide and the third ground electrode;
the bias electrodes comprise two first bias electrodes and two second bias electrodes, one first bias electrode and one second bias electrode are respectively arranged on two sides of the upper arm waveguide, the other first bias electrode and the other second bias electrode are respectively arranged on two sides of the lower arm waveguide, the two first bias electrodes are located between the upper arm waveguide and the lower arm waveguide, the two first bias electrodes are electrically connected with each other, and the two second bias electrodes are electrically connected with each other.
Further, the upper cross-coupling waveguide comprises an upper input connection waveguide, an upper parallel coupling straight waveguide and an upper output connection waveguide, wherein a first end of the upper parallel coupling straight waveguide is connected with a second end of the transition section waveguide through the upper input connection waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel coupling straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a second adjusting electrode and two first adjusting electrodes, the second adjusting electrode is arranged between an upper input connecting waveguide, an upper parallel coupling straight waveguide, a lower input connecting waveguide and a lower parallel coupling straight waveguide, one of the first adjusting electrodes is arranged on one side of the upper input connecting waveguide, the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide, which are far away from the second adjusting electrode, the other of the first adjusting electrodes is arranged on one side of the lower input connecting waveguide, the lower parallel coupling straight waveguide, which is far away from the second adjusting electrode, and the first adjusting electrodes are electrically connected with each other.
Further, the upper cross-coupling waveguide comprises an upper input connection waveguide, an upper parallel adjustment straight waveguide, an upper coupling connection waveguide, an upper parallel coupling straight waveguide and an upper output connection waveguide, wherein a first end of the upper parallel adjustment straight waveguide is connected with a second end of the transition section waveguide through the upper input connection waveguide, a second end of the upper parallel adjustment straight waveguide is connected with a first end of the upper parallel coupling straight waveguide through the upper coupling connection waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel adjusting straight waveguide, a lower coupling connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel adjusting straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, the second end of the lower parallel adjusting straight waveguide is connected with the first end of the lower parallel coupling straight waveguide through the lower coupling connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide;
the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide are parallel to each other, and the distance between the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide is equal to the distance between the upper arm waveguide and the lower arm waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises two first adjusting electrodes and two second adjusting electrodes, one first adjusting electrode and one second adjusting electrode are respectively arranged on two sides of the upper parallel adjusting straight waveguide and the other second adjusting electrode are respectively arranged on two sides of the lower parallel adjusting straight waveguide and the first adjusting electrodes are respectively arranged between the upper parallel adjusting straight waveguide and the lower parallel adjusting straight waveguide and are electrically connected with each other and the second adjusting electrodes are electrically connected with each other.
Further, the optical waveguide is a dual-polarization waveguide prepared by a titanium diffusion process or a single-polarization waveguide prepared by a proton exchange process by using a lithium niobate material.
Has the advantages that: the invention carries out optimization improvement on the basis of the existing double-drive M-Z type optical single sideband modulator, replaces the Y-branch waveguide with the adjustable Y-branch waveguide, and correspondingly arranges the adjusting electrode, and adjusts the effective optical power, namely the splitting ratio, in the adjustable Y-branch waveguide, thereby compensating the influence of the non-ideal preparation process of the Y-branch waveguide device on the sideband suppression ratio, simultaneously compensating the influence of the non-uniform half-wave voltage of the two-arm waveguide of the device and the non-ideal power distribution of the microwave hybrid coupler on the sideband suppression ratio by adjusting the splitting ratio, and further improving the sideband suppression ratio of the optical single sideband modulator.
Drawings
FIG. 1 is a schematic structural diagram of a Z-cut lithium niobate dual-drive M-Z modulator chip in the prior art;
FIG. 2 is a schematic structural view of embodiment 1 of the present invention;
FIG. 3 is a schematic structural view of a tunable Y-branch waveguide and a tuning electrode in example 1 of the present invention;
FIG. 4 is a schematic structural diagram of a tunable Y-branch waveguide and a tuning electrode in example 2 of the present invention;
FIG. 5 is a schematic structural view of example 3 of the present invention;
FIG. 6 is a schematic structural view of an adjustable Y-branch waveguide and an adjusting electrode in example 3 of the present invention;
fig. 7 is a schematic structural diagram of the tunable Y-branch waveguide and the tuning electrode in embodiment 4 of the present invention.
In the figure: 1. the waveguide structure comprises a substrate, 3 radio-frequency electrodes, 4 bias electrodes, 20 input straight waveguides, 21Y branch waveguides, 22 adjustable Y branch waveguides, 23 upper arm waveguides, 24 lower arm waveguides, 25 beam combination region waveguides, 26 output straight waveguides, 31 first radio-frequency electrodes, 32 second radio-frequency electrodes, 33 first ground electrodes, 34 second ground electrodes, 35 third ground electrodes, 41 first bias electrodes, 42 second bias electrodes, 51 first adjusting electrodes, 52 second adjusting electrodes, 100 transition section waveguides, 101 upper input connecting waveguides, 102 upper parallel adjusting straight waveguides, 103 upper coupling connecting waveguides, 104 upper parallel coupling straight waveguides, 105 upper output connecting waveguides, 111 lower input connecting waveguides, 112 lower parallel adjusting straight waveguides, 113 lower coupling connecting waveguides, 114 lower parallel coupling straight waveguides and 115 lower output connecting waveguides.
Detailed Description
In order to make the technical solutions in the embodiments of the present invention better understood and make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
In the description of the present invention, unless otherwise specified and limited, it is to be noted that the term "connected" is to be interpreted broadly, and may be, for example, a mechanical connection or an electrical connection, or a communication between two elements, or may be a direct connection or an indirect connection through an intermediate medium, and a specific meaning of the term may be understood by those skilled in the art according to specific situations.
Example 1
As shown in fig. 2, this embodiment includes a substrate 1, an optical waveguide, a radio frequency electrode, and a bias electrode, where the substrate 1 is a Z-cut lithium niobate substrate, and the optical waveguide is preferably a dual-polarization waveguide prepared by using a lithium niobate material through a titanium diffusion process or a single-polarization waveguide prepared by using a proton exchange process, and of course, a polarization waveguide prepared by using other processes may also be used; the optical waveguide comprises an input straight waveguide 20, an adjustable Y-branch waveguide 22, an upper arm waveguide 23, a lower arm waveguide 24, a beam combination region waveguide 25 and an output straight waveguide 26, and an adjusting electrode is arranged at the position of the substrate 1 corresponding to the adjustable Y-branch waveguide 22.
As shown in fig. 3, the tunable Y-branch waveguide 22 includes a transition waveguide 100, an upper input connection waveguide 101, an upper parallel coupling straight waveguide 104, an upper output connection waveguide 105, a lower input connection waveguide 111, a lower parallel coupling straight waveguide 114, and a lower output connection waveguide 115, where the upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114 are parallel to each other and closely spaced, so that there is a strong cross-coupling effect therebetween. The first end of the transition waveguide 100 is connected with the input straight waveguide 20, the first end of the upper parallel coupling straight waveguide 104 is connected with the second end of the transition waveguide 100 through the upper input connecting waveguide 101, and the second end is connected with the first end of the upper arm waveguide 23 through the upper output connecting waveguide 105; the first end of the lower parallel-coupled straight waveguide 114 is connected to the second end of the transition waveguide 100 through a lower input connecting waveguide 111, and the second end is connected to the first end of the lower arm waveguide 24 through a lower output connecting waveguide 115; the second end of the upper arm waveguide 23 and the second end of the lower arm waveguide 24 are respectively connected to two input ends of a combining region waveguide 25, and an output end of the combining region waveguide 25 is connected to an output straight waveguide 26. The tuning electrodes include a first tuning electrode 51 and a second tuning electrode 52, the first tuning electrode 51 overlying the upper input connecting waveguide 101 and the upper parallel-coupling straight waveguide 104, and the second tuning electrode 52 overlying the lower input connecting waveguide 111 and the lower parallel-coupling straight waveguide 114.
As shown in fig. 1, the radio frequency electrodes include first and second radio frequency electrodes 31 and 32, first and second ground electrodes 33 and 34, and third ground electrodes 35; the first ground electrode 44 is disposed on the side of the upper arm waveguide 23 away from the lower arm waveguide 24, the second ground electrode 34 is disposed between the upper arm waveguide 23 and the lower arm waveguide 24, the third ground electrode 35 is disposed on the side of the lower arm waveguide 24 away from the upper arm waveguide 23, the first rf electrode 31 overlies the upper arm waveguide 23, and the second rf electrode 32 overlies the lower arm waveguide 24. The bias electrodes comprise three first bias electrodes 41 and three second bias electrodes 42, one first bias electrode 41 covers the upper arm waveguide 23, the other two first bias electrodes 41 are respectively arranged at two sides of the lower arm waveguide 24, and the three first bias electrodes 41 are electrically connected with each other; one of the second bias electrodes 42 is coated on the lower arm waveguide 24, the other two second bias electrodes 42 are respectively disposed on both sides of the upper arm waveguide 23, and the three second bias electrodes 42 are electrically connected to each other.
The working principle of the embodiment is as follows:
output optical signal E of double-drive M-Z modulator when no radio frequency signal and bias voltage are inputoutCan be represented as Eout＝A·exp(iωct)
Where A is the optical field amplitude of the input light, ωcIs the angular frequency of the input light.
When radio frequency signals and bias voltage are input, the double-drive M-Z modulator outputs optical fields E of the optical signalsoutCan be expressed as
α is the inverse cosine of the amplitude of the optical field in the upper arm waveguide 23 relative to the amplitude of the optical field of the input light, theta is the phase difference of the upper and lower arm optical paths generated by the bias electrode, omegaeAngular frequency of RF signals input to the first RF electrode 31 and the second RF electrode 32 β1β for the modulation depth experienced by the upper arm waveguide 232The modulation depth to which the lower arm waveguide 24 is subjected;
the phase shift of the rf signal input for the second rf electrode 32 relative to the rf signal input for the first rf electrode 31.
The first-class Bessel function is used for developing the above formula, and the formula is obtained after simplification
The optical field of +/-1 order sideband of output optical signal of the double-drive M-Z modulator can be written at the moment
The power value of the + -1 order sideband of the output optical signal can be expressed as
Wherein E is+1Optical field representing +1 order sideband of the output optical signal, E-1An optical field representing the-1 th order sideband of the output optical signal; p+1Representing the power of the +1 th order sideband of the output optical signal, P-1Representing the power of the output optical signal-1 order sideband.
Theta and theta are used when the device is operating in a state in which the-1 order sideband is suppressed
Satisfy the relationship of
n represents an integer, where the power expression of the-1 th order sideband may be as follows
P-1＝A2[J1(β1)cosα-J1(β2)sinα]2
It can be seen that the splitting ratio and modulation depth are achieved if and only ifJ1(β1)cosα＝J1(β2) sin α relationship, the device-1 order sidebands are completely suppressed, and the sideband suppression ratio can be highest.
Theta and theta are used when the device is operating in a state that suppresses +1 order sidebands
Satisfy the relationship of
n represents an integer, and in this case, the power expression of the +1 order sideband can be expressed as
P+1＝A2[J1(β1)cosα-J1(β2)sinα]2
It can be seen that if and only if the splitting ratio and modulation depth reach J1(β1)cosα＝J1(β2) sin α relationship, the +1 order sideband of the device is completely suppressed, and the sideband suppression ratio can reach the highest.
Thus, when the device is operating in a suppressed-1 order sideband state
While the OR device is operating in a state suppressing +1 order sidebands
By adjusting the voltages applied to the first adjustment electrode 51 and the second adjustment electrode 52, the splitting ratio and modulation depth of the two signals output from the adjustable Y-branch waveguide 22 to the upper arm waveguide 23 and the lower arm waveguide 24 satisfy J1(β1)cosα＝J1(β2) sin α, the influence of the non-ideal of the traditional Y branch waveguide on the sideband suppression ratio can be successfully avoided, and the influence of the unequal modulation depths of the two arms on the sideband suppression ratio can be compensated by adjusting the splitting ratio, so that the generation of the optical single sideband signal with high sideband suppression ratio can be realized.
Example 2
The present embodiment differs from embodiment 1 in that the structures of the tunable Y-branch waveguide 22 and the tuning electrode are different, as shown in fig. 4, in the present embodiment, the tunable Y-branch waveguide 22 includes a transition waveguide 100, an upper input connection waveguide 101, an upper parallel tuning straight waveguide 102, an upper coupling connection waveguide 103, an upper parallel coupling straight waveguide 104, an upper output connection waveguide 105, a lower input connection waveguide 111, a lower parallel tuning straight waveguide 112, a lower coupling connection waveguide 113, a lower parallel coupling straight waveguide 114 and a lower output connection waveguide 115, the first end of the transition waveguide 100 is connected with the input straight waveguide 20, the first end of the upper parallel adjusting straight waveguide 102 is connected with the second end of the transition waveguide 100 through the upper input connecting waveguide 101, the second end is connected with the first end of the upper parallel coupling straight waveguide 104 through the upper coupling connecting waveguide 103, the second end of the upper parallel coupling straight waveguide 104 is connected with the first end of the upper arm waveguide 23 through an upper output connecting waveguide 105; the first end of the lower parallel adjustment straight waveguide 112 is connected to the second end of the transition waveguide 100 through a lower input connection waveguide 111, the second end is connected to the first end of a lower parallel coupling straight waveguide 114 through a lower coupling connection waveguide 113, and the second end of the lower parallel coupling straight waveguide 114 is connected to the first end of the lower arm waveguide 24 through a lower output connection waveguide 115.
The upper parallel-adjustment straight waveguide 102 and the lower parallel-adjustment straight waveguide 112 are parallel to each other with a distance therebetween equivalent to the distance between the upper arm waveguide 23 and the lower arm waveguide 24, and since the distance between the upper parallel-adjustment straight waveguide 102 and the lower parallel-adjustment straight waveguide 112 is relatively long, the cross-coupling effect therebetween is almost 0. The upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114 are parallel to each other and closely spaced, so that a strong cross coupling effect exists between the upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114, and thus the upper coupling connection waveguide 103, the upper parallel coupling straight waveguide 104, the upper output connection waveguide 105, the lower coupling connection waveguide 113, the lower parallel coupling straight waveguide 114 and the lower output connection waveguide 115 form a 2 × 2 coupler; the adjusting electrodes comprise a first adjusting electrode 51 and a second adjusting electrode 52, the first adjusting electrode 51 is covered on the upper parallel adjusting straight waveguide 102, and the second adjusting electrode 52 is covered on the lower parallel adjusting straight waveguide 112.
The working principle of this embodiment is the same as that of embodiment 1, and will not be described herein.
Example 3
As shown in fig. 5, this embodiment includes a substrate 1, an optical waveguide, a radio frequency electrode, and a bias electrode, where the substrate 1 is an X-cut lithium niobate substrate, and the optical waveguide is preferably a dual-polarization waveguide prepared by using a lithium niobate material through a titanium diffusion process or a single-polarization waveguide prepared by using a proton exchange process, and of course, a polarization waveguide prepared by using other processes may also be used; the optical waveguide comprises an input straight waveguide 20, an adjustable Y-branch waveguide 22, an upper arm waveguide 23, a lower arm waveguide 24, a beam combination region waveguide 25 and an output straight waveguide 26, and an adjusting electrode is arranged at the position of the substrate 1 corresponding to the adjustable Y-branch waveguide 22.
As shown in fig. 6, the tunable Y-branch waveguide 22 includes a transition waveguide 100, an upper input connection waveguide 101, an upper parallel coupling straight waveguide 104, an upper output connection waveguide 105, a lower input connection waveguide 111, a lower parallel coupling straight waveguide 114, and a lower output connection waveguide 115, where the upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114 are parallel to each other and closely spaced, so that there is a strong cross-coupling effect therebetween. The first end of the transition waveguide 100 is connected with the input straight waveguide 20, the first end of the upper parallel coupling straight waveguide 104 is connected with the second end of the transition waveguide 100 through the upper input connecting waveguide 101, and the second end is connected with the first end of the upper arm waveguide 23 through the upper output connecting waveguide 105; the first end of the lower parallel-coupled straight waveguide 114 is connected to the second end of the transition waveguide 100 through a lower input connecting waveguide 111, and the second end is connected to the first end of the lower arm waveguide 24 through a lower output connecting waveguide 115; the second end of the upper arm waveguide 23 and the second end of the lower arm waveguide 24 are respectively connected to two input ends of a combining region waveguide 25, and an output end of the combining region waveguide 25 is connected to an output straight waveguide 26. The adjusting electrodes comprise a second adjusting electrode 52 and two first adjusting electrodes 51, the second adjusting electrode 52 is arranged among the upper input connecting waveguide 101, the upper parallel coupling straight waveguide 104, the lower input connecting waveguide 111 and the lower parallel coupling straight waveguide 114, one first adjusting electrode 51 is arranged on one side, far away from the second adjusting electrode 52, of the upper input connecting waveguide 101 and the upper parallel coupling straight waveguide 104, the other first adjusting electrode 51 is arranged on one side, far away from the second adjusting electrode 52, of the lower input connecting waveguide 111 and the lower parallel coupling straight waveguide 114, and the two first adjusting electrodes 51 are electrically connected with each other.
As shown in fig. 5, the radio frequency electrodes include first and second radio frequency electrodes 31 and 32, first and second ground electrodes 33 and 34, and third ground electrodes 35; the first ground electrode 44 is disposed on a side of the upper arm waveguide 23 remote from the lower arm waveguide 24, the second ground electrode 34 is disposed between the upper arm waveguide 23 and the lower arm waveguide 24, the third ground electrode 35 is disposed on a side of the lower arm waveguide 24 remote from the upper arm waveguide 23, the first radio-frequency electrode 31 is disposed between the upper arm waveguide 23 and the first ground electrode 33, and the second radio-frequency electrode 32 is disposed between the lower arm waveguide 24 and the third ground electrode 35.
The bias electrodes include two first bias electrodes 41 and two second bias electrodes 42, one first bias electrode 41 and one second bias electrode 42 are respectively disposed on both sides of the upper arm waveguide 23, the other first bias electrode 41 and the other second bias electrode 42 are respectively disposed on both sides of the lower arm waveguide 24, the two first bias electrodes 41 are both located between the upper arm waveguide 23 and the lower arm waveguide 24, the two first bias electrodes 41 are electrically connected to each other, and the two second bias electrodes 42 are electrically connected to each other.
The working principle of this embodiment is the same as that of embodiment 1, and will not be described herein.
Example 4
The present embodiment differs from embodiment 3 in that the structures of the tunable Y-branch waveguide 22 and the tuning electrode are different, as shown in fig. 7, in the present embodiment, the tunable Y-branch waveguide 22 includes a transition waveguide 100, an upper input connection waveguide 101, an upper parallel tuning straight waveguide 102, an upper coupling connection waveguide 103, an upper parallel coupling straight waveguide 104, an upper output connection waveguide 105, a lower input connection waveguide 111, a lower parallel tuning straight waveguide 112, a lower coupling connection waveguide 113, a lower parallel coupling straight waveguide 114 and a lower output connection waveguide 115, the first end of the transition waveguide 100 is connected with the input straight waveguide 20, the first end of the upper parallel adjusting straight waveguide 102 is connected with the second end of the transition waveguide 100 through the upper input connecting waveguide 101, the second end is connected with the first end of the upper parallel coupling straight waveguide 104 through the upper coupling connecting waveguide 103, the second end of the upper parallel coupling straight waveguide 104 is connected with the first end of the upper arm waveguide 23 through an upper output connecting waveguide 105; the first end of the lower parallel adjustment straight waveguide 112 is connected to the second end of the transition waveguide 100 through a lower input connection waveguide 111, the second end is connected to the first end of a lower parallel coupling straight waveguide 114 through a lower coupling connection waveguide 113, and the second end of the lower parallel coupling straight waveguide 114 is connected to the first end of the lower arm waveguide 24 through a lower output connection waveguide 115.
The upper parallel-adjustment straight waveguide 102 and the lower parallel-adjustment straight waveguide 112 are parallel to each other with a distance therebetween equivalent to the distance between the upper arm waveguide 23 and the lower arm waveguide 24, and since the distance between the upper parallel-adjustment straight waveguide 102 and the lower parallel-adjustment straight waveguide 112 is relatively long, the cross-coupling effect therebetween is almost 0. The upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114 are parallel to each other and closely spaced, so that a strong cross coupling effect exists between the upper parallel coupling straight waveguide 104 and the lower parallel coupling straight waveguide 114, and thus the upper coupling connection waveguide 103, the upper parallel coupling straight waveguide 104, the upper output connection waveguide 105, the lower coupling connection waveguide 113, the lower parallel coupling straight waveguide 114 and the lower output connection waveguide 115 form a 2 × 2 coupler; the adjusting electrodes comprise two first adjusting electrodes 51 and two second adjusting electrodes 52, one first adjusting electrode 51 and one second adjusting electrode 52 are respectively arranged at two sides of the upper parallel adjusting straight waveguide 102, the other first adjusting electrode 51 and the other second adjusting electrode 52 are respectively arranged at two sides of the lower parallel adjusting straight waveguide 112, the two first adjusting electrodes 51 are respectively positioned between the upper parallel adjusting straight waveguide and the lower parallel adjusting straight waveguide, the two first adjusting electrodes 51 are electrically connected with each other, and the two second adjusting electrodes 52 are electrically connected with each other.
The working principle of this embodiment is the same as that of embodiment 1, and will not be described herein.
The invention replaces the Y-branch waveguide 21 of the existing double-drive M-Z type optical single sideband modulator with the adjustable Y-branch waveguide 22, and correspondingly arranges the adjusting electrode, and adjusts the effective optical power, namely the splitting ratio, in the adjustable Y-branch waveguide 22, thereby making up the influence of the non-ideal preparation process of the Y-branch waveguide device on the sideband suppression ratio, and simultaneously compensating the influence of the non-uniform half-wave voltage of the waveguides at two arms of the device and the non-ideal power distribution of the microwave hybrid coupler on the sideband suppression ratio by adjusting the splitting ratio, thereby improving the sideband suppression ratio of the optical single sideband modulator.
The undescribed parts of the present invention are consistent with the prior art, and are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures made by using the contents of the present specification and the drawings can be directly or indirectly applied to other related technical fields, and are within the scope of the present invention.
Claims (8)
1. A double-drive M-Z optical single sideband modulator with high sideband suppression ratio comprises a substrate, an optical waveguide, a radio frequency electrode and a bias electrode, wherein the substrate is made of photoelectric materials; the adjustable Y-branch waveguide comprises a transition section waveguide, an upper cross coupling waveguide and a lower cross coupling waveguide, wherein a first end of the transition section waveguide is connected with the input straight waveguide, a second end of the transition section waveguide is respectively connected with first ends of the upper cross coupling waveguide and the lower cross coupling waveguide, a second end of the upper cross coupling waveguide is connected with a first end of an upper arm waveguide, a second end of the lower cross coupling waveguide is connected with a first end of a lower arm waveguide, a second end of the upper arm waveguide and a second end of the lower arm waveguide are respectively connected with two input ends of a beam combination area waveguide, and an output end of the beam combination area waveguide is connected with the output straight waveguide; the adjusting electrode is used for applying voltage to change the ratio of the output light power of the upper cross-coupled waveguide and the lower cross-coupled waveguide, and the sideband suppression ratio of output signals is improved.
2. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 1, wherein the substrate is a Z-cut lithium niobate substrate, the radio frequency electrodes comprising a first radio frequency electrode, a second radio frequency electrode, a first ground electrode, a second ground electrode, and a third ground electrode; the first ground electrode is arranged on one side of the upper arm waveguide far away from the lower arm waveguide, the second ground electrode is arranged between the upper arm waveguide and the lower arm waveguide, the third ground electrode is arranged on one side of the lower arm waveguide far away from the upper arm waveguide, the first radio-frequency electrode is covered on the upper arm waveguide, and the second radio-frequency electrode is covered on the lower arm waveguide;
the bias electrodes comprise three first bias electrodes and three second bias electrodes, one first bias electrode covers the upper arm waveguide, the other two first bias electrodes are respectively arranged on two sides of the lower arm waveguide, and the three first bias electrodes are mutually and electrically connected; one second bias electrode covers the lower arm waveguide, the other two second bias electrodes are respectively arranged on two sides of the upper arm waveguide, and the three second bias electrodes are electrically connected with each other.
3. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 2, wherein the upper cross-coupled waveguide comprises an upper input connection waveguide, an upper parallel coupled straight waveguide, and an upper output connection waveguide, the first end of the upper parallel coupled straight waveguide being connected to the second end of the transition segment waveguide by the upper input connection waveguide, the second end being connected to the first end of the upper arm waveguide by the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel coupling straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a first adjusting electrode and a second adjusting electrode, the first adjusting electrode is covered on the upper input connecting waveguide and the upper parallel coupling straight waveguide, and the second adjusting electrode is covered on the lower input connecting waveguide and the lower parallel coupling straight waveguide.
4. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 2, wherein the upper cross-coupled waveguide comprises an upper input connecting waveguide, an upper parallel tuning straight waveguide, an upper coupling connecting waveguide, an upper parallel coupling straight waveguide and an upper output connecting waveguide, wherein a first end of the upper parallel tuning straight waveguide is connected with a second end of the transition section waveguide through the upper input connecting waveguide, a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper parallel coupling straight waveguide through the upper coupling connecting waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connecting waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel adjusting straight waveguide, a lower coupling connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel adjusting straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, the second end of the lower parallel adjusting straight waveguide is connected with the first end of the lower parallel coupling straight waveguide through the lower coupling connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide;
the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide are parallel to each other, and the distance between the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide is equal to the distance between the upper arm waveguide and the lower arm waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a first adjusting electrode and a second adjusting electrode, the first adjusting electrode covers the upper parallel adjusting straight waveguide, and the second adjusting electrode covers the lower parallel adjusting straight waveguide.
5. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 1, wherein the substrate is an X-cut lithium niobate substrate, the radio frequency electrodes comprising a first radio frequency electrode, a second radio frequency electrode, a first ground electrode, a second ground electrode, and a third ground electrode; the first ground electrode is arranged on one side, away from the lower arm waveguide, of the upper arm waveguide, the second ground electrode is arranged between the upper arm waveguide and the lower arm waveguide, the third ground electrode is arranged on one side, away from the upper arm waveguide, of the lower arm waveguide, the first radio-frequency electrode is arranged between the upper arm waveguide and the first ground electrode, and the second radio-frequency electrode is arranged between the lower arm waveguide and the third ground electrode;
the bias electrodes comprise two first bias electrodes and two second bias electrodes, one first bias electrode and one second bias electrode are respectively arranged on two sides of the upper arm waveguide, the other first bias electrode and the other second bias electrode are respectively arranged on two sides of the lower arm waveguide, the two first bias electrodes are located between the upper arm waveguide and the lower arm waveguide, the two first bias electrodes are electrically connected with each other, and the two second bias electrodes are electrically connected with each other.
6. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 5, wherein the upper cross-coupled waveguide comprises an upper input connection waveguide, an upper parallel coupled straight waveguide, and an upper output connection waveguide, the first end of the upper parallel coupled straight waveguide being connected to the second end of the transition segment waveguide by the upper input connection waveguide and the second end being connected to the first end of the upper arm waveguide by the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel coupling straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises a second adjusting electrode and two first adjusting electrodes, the second adjusting electrode is arranged between an upper input connecting waveguide, an upper parallel coupling straight waveguide, a lower input connecting waveguide and a lower parallel coupling straight waveguide, one of the first adjusting electrodes is arranged on one side of the upper input connecting waveguide, the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide, which are far away from the second adjusting electrode, the other of the first adjusting electrodes is arranged on one side of the lower input connecting waveguide, the lower parallel coupling straight waveguide, which is far away from the second adjusting electrode, and the first adjusting electrodes are electrically connected with each other.
7. The high sideband suppression ratio dual drive M-Z optical single sideband modulator of claim 5, wherein the upper cross-coupled waveguide comprises an upper input connection waveguide, an upper parallel adjustment straight waveguide, an upper coupling connection waveguide, an upper parallel coupling straight waveguide and an upper output connection waveguide, wherein a first end of the upper parallel adjustment straight waveguide is connected with a second end of the transition section waveguide through the upper input connection waveguide, a second end of the upper parallel adjustment straight waveguide is connected with a first end of the upper parallel coupling straight waveguide through the upper coupling connection waveguide, and a second end of the upper parallel coupling straight waveguide is connected with a first end of the upper arm waveguide through the upper output connection waveguide;
the lower cross-coupling waveguide comprises a lower input connecting waveguide, a lower parallel adjusting straight waveguide, a lower coupling connecting waveguide, a lower parallel coupling straight waveguide and a lower output connecting waveguide, wherein the first end of the lower parallel adjusting straight waveguide is connected with the second end of the transition section waveguide through the lower input connecting waveguide, the second end of the lower parallel adjusting straight waveguide is connected with the first end of the lower parallel coupling straight waveguide through the lower coupling connecting waveguide, and the second end of the lower parallel coupling straight waveguide is connected with the first end of the lower arm waveguide through the lower output connecting waveguide;
the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide are parallel to each other, and the distance between the upper parallel adjustment straight waveguide and the lower parallel adjustment straight waveguide is equal to the distance between the upper arm waveguide and the lower arm waveguide; the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide are parallel to each other, and a cross coupling effect is formed between the upper parallel coupling straight waveguide and the lower parallel coupling straight waveguide; the adjusting electrode comprises two first adjusting electrodes and two second adjusting electrodes, one first adjusting electrode and one second adjusting electrode are respectively arranged on two sides of the upper parallel adjusting straight waveguide and the other second adjusting electrode are respectively arranged on two sides of the lower parallel adjusting straight waveguide and the first adjusting electrodes are respectively arranged between the upper parallel adjusting straight waveguide and the lower parallel adjusting straight waveguide and are electrically connected with each other and the second adjusting electrodes are electrically connected with each other.
8. The high sideband suppression ratio double-drive M-Z optical single sideband modulator according to any one of claims 1-7, wherein the optical waveguide is a dual polarization waveguide prepared by a titanium diffusion process or a single polarization waveguide prepared by a proton exchange process using a lithium niobate material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010668264.XA CN111610596B (en) | 2020-07-13 | 2020-07-13 | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010668264.XA CN111610596B (en) | 2020-07-13 | 2020-07-13 | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111610596A true CN111610596A (en) | 2020-09-01 |
| CN111610596B CN111610596B (en) | 2022-02-22 |
Family
ID=72203237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010668264.XA Active CN111610596B (en) | 2020-07-13 | 2020-07-13 | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111610596B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024078242A1 (en) * | 2022-10-09 | 2024-04-18 | 华为技术有限公司 | Optical-power-adjustable optical combiner/splitter, related device and system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5778112A (en) * | 1995-12-21 | 1998-07-07 | Electronics And Telecommunications Research Institute | Waveguide polymer electro-optic modulator/switch |
| CN107037613A (en) * | 2017-06-02 | 2017-08-11 | 电子科技大学 | The M Z electrooptic modulators with adjustable grating based on graphene molybdenum disulfide hetero-junctions |
| CN108631877A (en) * | 2017-03-20 | 2018-10-09 | 上海交通大学 | Single-side belt electro-optic modulation arrangement |
| CN108696318A (en) * | 2017-04-06 | 2018-10-23 | 上海交通大学 | The single-side belt electro-optic modulation arrangement that carrier wave inhibits |
| CN110927872A (en) * | 2019-12-12 | 2020-03-27 | 中国电子科技集团公司第四十四研究所 | Optical waveguide intensity modulator chip with large optical path difference |
| CN111308740A (en) * | 2020-03-10 | 2020-06-19 | 苏州康冠光电科技有限公司 | High extinction ratio electro-optical intensity modulator |
-
2020
- 2020-07-13 CN CN202010668264.XA patent/CN111610596B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5778112A (en) * | 1995-12-21 | 1998-07-07 | Electronics And Telecommunications Research Institute | Waveguide polymer electro-optic modulator/switch |
| CN108631877A (en) * | 2017-03-20 | 2018-10-09 | 上海交通大学 | Single-side belt electro-optic modulation arrangement |
| CN108696318A (en) * | 2017-04-06 | 2018-10-23 | 上海交通大学 | The single-side belt electro-optic modulation arrangement that carrier wave inhibits |
| CN107037613A (en) * | 2017-06-02 | 2017-08-11 | 电子科技大学 | The M Z electrooptic modulators with adjustable grating based on graphene molybdenum disulfide hetero-junctions |
| CN110927872A (en) * | 2019-12-12 | 2020-03-27 | 中国电子科技集团公司第四十四研究所 | Optical waveguide intensity modulator chip with large optical path difference |
| CN111308740A (en) * | 2020-03-10 | 2020-06-19 | 苏州康冠光电科技有限公司 | High extinction ratio electro-optical intensity modulator |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024078242A1 (en) * | 2022-10-09 | 2024-04-18 | 华为技术有限公司 | Optical-power-adjustable optical combiner/splitter, related device and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111610596B (en) | 2022-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6262834B1 (en) | Wideband single sideband modulation of optical carriers | |
| US10955723B2 (en) | Optical modulator, and optical transceiver module using the same | |
| US7826689B2 (en) | Optical device which outputs independently modulated light beams in respective TE and TM polarization modes | |
| US7787773B1 (en) | Radio oscillating and radar systems | |
| CN111048969B (en) | Frequency doubling photoelectric oscillator based on stimulated Brillouin scattering effect | |
| CN113991266B (en) | Broadband microwave photon phase shifter with constant output power | |
| CN111610596B (en) | Double-drive M-Z optical single sideband modulator with high sideband suppression ratio | |
| JP2014112171A (en) | Optical modulator | |
| Keshavarz et al. | Silicon photonic-based integrated microwave photonic reconfigurable mixer, phase shifter, and frequency doubler | |
| CN113467106A (en) | Folded Mach-Zehnder modulator | |
| CN111458948B (en) | Electric light intensity modulator for improving switch extinction ratio and application thereof | |
| Hosseini et al. | Bias-free OSSB modulator with tunable OCSR | |
| KR20070019390A (en) | Integrated optical modulator and method for manufacturing the same | |
| CN115037380B (en) | Amplitude-phase-adjustable integrated microwave photonic mixer chip and control method thereof | |
| CN114089551B (en) | Working point self-stabilization type thin film lithium niobate Mach-Zehnder electro-optic modulator | |
| Shi et al. | Optical single-sideband modulation based on a silicon dual-parallel Mach-Zehnder modulator | |
| JP4544467B2 (en) | Light modulator | |
| US8442361B1 (en) | Apparatus and method of linearization in an optical modulator | |
| Lauermann et al. | Integrated silicon-organic hybrid (SOH) frequency shifter | |
| WO2023160392A1 (en) | Electro-optical modulator | |
| US11852878B2 (en) | Optical device and optical communication apparatus | |
| CN219676399U (en) | Electro-optic modulator | |
| US11914233B2 (en) | Optical device and optical communication device | |
| CN115903284A (en) | Electro-optic modulator | |
| US20240192569A1 (en) | Electro-optic modulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231208 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.44 Research Institute |
|
| TR01 | Transfer of patent right |