CN107037613A - The M Z electrooptic modulators with adjustable grating based on graphene molybdenum disulfide hetero-junctions - Google Patents
The M Z electrooptic modulators with adjustable grating based on graphene molybdenum disulfide hetero-junctions Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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Abstract
The invention belongs to photoelectron technical field, disclose a kind of M Z electrooptic modulators with adjustable grating based on graphene molybdenum disulfide hetero-junctions, including substrate layer, be completely embedded into the input and output adjustable grating being sequentially connected in substrate layer, the waveguide of input and output direct light, S flexure types y branch waveguide and two-arm direct light waveguide.The second graphene layer, molybdenum disulfide, the first graphene layer are sequentially provided with the two-arm direct light waveguide from top to bottom, first graphene layer is connected to first electrode and the 3rd electrode, and second graphene layer is connected to the second electrode being located between two-arm.The 4th graphene layer, boron nitride separation layer, the 3rd graphene layer are sequentially provided with the input and output adjustable grating from top to bottom, the three, the 4th graphene layers are connected respectively to the four, the 5th electrodes.Compared to traditional structure, the present invention has the advantages that size is small and is easy to that integrated, modulation depth is big, extinction ratio is high, temperature allowance is big.
Description
Technical field
The invention belongs to optoelectronic device technology field, and in particular to a kind of heterogeneous based on graphene-molybdenum disulfide
The M-Z electrooptic modulators with adjustable grating of knot.
Background technology
Optical modulator is the Primary Component in optical communication system, and the quality of its performance directly affects the transmission matter of optical signal
The stability of amount and system.M-Z electrooptic modulators are a kind of external modulators of use interferometer structure, by reference arm and tune
Arm processed applies different voltages, changes phase of light wave so that light wave interferes constructive or negative in output end, so that phase be become
Change is changed into light intensity change, realizes intensity modulated.It is periodically variable that grating refers to that optical parameter or space structure distribution have
Diffraction system, can be reflected light, be reflected, being interfered and diffraction.Traditional grating is by being lithographically formed in material surface
Permanent cutting, therefore resonance wavelength fixes.In order to meet the requirement of high-speed high capacity optic communication, the research of adjustable grating into
For focus.Most of silicon substrate adjustable grating is all the thermo-optic effect and carrier dispersion effect using silicon, but the hot light of silicon
Effect is slow to the response speed of optical signal, and carrier dispersion effect is weaker, and resonance wavelength knots modification is smaller.
Graphene is the carbon atom individual layer for being arranged in two-dimentional dense cellular shape lattice structure, and the absorptivity of single-layer graphene is
2.3%, it can be used as light absorbing material.Graphene also has zero special band gap band structure, has made the speed ratio of transmission electronics
Know that conductor is all fast, close to the 1/300 of the light velocity；Resistivity only has about 10-6Ω cm, are the minimum materials of known resistivity；Carry
Stream transport factor is up to 200000cm2/ (Vs), this provides possibility to prepare high-speed electro-optic modulator.Graphene has
Effect refractive index is regulated and controled by extra electric field, using its electroluminescent refraction effect, on the one hand can be used for the resonance wavelength for changing grating；
On the other hand it may be added in the two-arm of M-Z electrooptic modulators, change phase of light wave, and then change the light intensity of output light.
Molybdenum disulfide is one kind in transient metal sulfide, and molecule is that active force is covalent in X-M-X interlayer structures, layer
Key, Interaction between layers are weak Van der Waals force.Individual layer molybdenum disulfide is the direct band gap material that energy gap is 1.9eV, tool
There are good electron mobility, about 700cm2/ (Vs), on-off ratio is up to 108.Electrical and optical properties are excellent.
There is also problem for above scheme：(1) use electrooptic effect traditional M-Z interferometers, size is larger, modulation depth more
Difference, extinction ratio is small, is not easy to integrated, and temperature allowance is small；(2) using thermo-optic effect and carrier dispersion effect be made it is tunable
The performance of grating can not meet the requirement of high-speed high capacity optical communication system well；(3) the M-Z Electro-optical Modulations based on graphene
The design of device is that multi-layer graphene is directly embedded into ridge waveguide, and the change of effective refractive index is smaller, complex manufacturing technology.
The content of the invention
Integrated, difference in depth modulation, extinction ratio be small, temperature allowance is small in order to overcome prior art size to be not easy to greatly by the present invention
Problem there is provided a kind of M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions.
In order to solve the above technical problems, the technical solution adopted in the present invention is：
A kind of M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions, including substrate
Layer, it is embedded the input and output adjustable grating connect, the waveguide of input and output direct light, S flexure type Y-branches is sequentially connected in substrate layer
Waveguide and two-arm direct light waveguide, the input and output adjustable grating, the waveguide of input and output direct light, S flexure types y branch waveguide and
The waveguide top surface of two-arm direct light waveguide and the upper surface of substrate layer at grade, are provided with the two-arm direct light waveguide
First graphene coating, the first graphene coating includes the second graphene layer, the molybdenum disulfide set gradually from top to bottom
With the first graphene layer, the second electrode connected on the second graphene layer, the first electrode and connected on the first graphene layer
Three electrodes, first electrode and the 3rd electrode not in contact with, the input and output adjustable grating is provided with the second graphene coating,
Second graphene coating includes the 4th graphene layer, boron nitride separation layer and the 3rd graphene set gradually from top to bottom
Layer, the 5th electrode being arranged on the 4th graphene layer and the 4th electrode being arranged on the 3rd graphene layer, wherein, the 3rd stone
Black alkene layer and the 4th graphene layer are interdigitated electrode structure.
Supratectal first graphene layer of first graphene and the second graphene layer separate composition by molybdenum disulfide
Hetero-junctions.
The two-arm direct light waveguide includes reference arm and modulation arm, first graphene layer from reference arm and modulation arm to
Outer extension, and be connected respectively with the first electrode on reference arm and the electrode of modulation arm the 3rd, the second graphene layer covering
It is connected on reference arm and modulation arm, and with the second electrode being located in the middle of reference arm and modulation arm.
The waveguiding structure of the input and output adjustable grating is burial type waveguide, and the 3rd graphene layer stretches out and connected
It is connected to the 4th electrode, the 4th graphene layer stretches out and is connected to the 5th electrode.
The branch-waveguide of the M-Z modulators is S flexure type y branch waveguides.
The material of the substrate layer is silica.
The input and output adjustable grating, the waveguide of input and output direct light, S flexure types y branch waveguide, two-arm direct light waveguide
Waveguide material be silicon nitride.
The first electrode, second electrode, the 3rd electrode, the material of the 4th electrode and the 5th electrode are gold, silver, copper, platinum,
Any one in titanium, nickel, cobalt, palladium or any two or more alloy.
Compared with prior art, the invention has the advantages that：
1st, with silicon nitride as waveguide material, with ultralow light loss and relatively low thermo-optical coeffecient, insertion loss is small, right
The tolerance of environment temperature is big.
2nd, there is smaller size compared to traditional M-Z electrooptic modulators, graphite is introduced on reference arm and modulation arm
Alkene-molybdenum disulfide hetero-junctions greatly strengthen the interaction of light and graphene, increase the knots modification of effective refractive index real part,
So as to reduce size, and S flexure type y branch waveguides are used, substantially reduce device bend loss.
3rd, adjustable grating can carry out resonance to the light of different wave length, so that the transmission for considerably increasing optic communication is held
Amount, available for wavelength-division multiplex system.
4th, grapheme material has the advantage that wide spectrum is responded, and compatible with traditional cmos process, additionally, due to graphene
Carrier mobility it is very high, provide possibility for High Speed Modulation.
5th, by making molybdenum disulfide and the first graphene layer, the second graphene layer constitute hetero-junctions, graphite has been given full play to
The advantage of alkene and molybdenum disulfide material, improves extinction ratio, increases modulation depth.
Brief description of the drawings：
Fig. 1 is the M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions of the present invention
The schematic cross-section of modulation arm straight wave guide；
Fig. 2 is the M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions of the present invention
Structural representation；
Fig. 3 is the M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions of the present invention
The structural representation of input and output adjustable grating；
Fig. 4 is the M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions of the present invention
Embodiment operation principle schematic diagram；
Marked in figure：1st, substrate layer, 2, input and output adjustable grating, 3, input and output direct light waveguide, 4, S flexure types Y
Branch-waveguide, 5, two-arm direct light waveguide, 51, reference arm, 52, modulation arm, the 6, first graphene coating, the 61, first graphene
Layer, 62, molybdenum disulfide, the 63, second graphene layer, 64, first electrode, 65, second electrode, the 66, the 3rd electrode, the 71, the 3rd stone
Black alkene layer, 72, boron nitride separation layer, the 73, the 4th graphene layer, the 74, the 4th electrode, the 75, the 5th electrode.
Embodiment
With reference to embodiment, the invention will be further described, and described embodiment is only a part of the invention
Embodiment, is not whole embodiments.Based on the embodiment in the present invention, one of ordinary skill in the art is not making
Other embodiments used obtained under the premise of creative work, belong to protection scope of the present invention.
With reference to accompanying drawing, a kind of M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions,
Including substrate layer 1, be embedded be sequentially connected in substrate layer 1 the input and output adjustable grating 2 connect, input and output direct light waveguide 3,
S flexure types y branch waveguide 4 and two-arm direct light waveguide 5, the input and output adjustable grating 2, input and output direct light waveguide 3, S
The upper surface of flexure type y branch waveguide 4 and the waveguide top surface of two-arm direct light waveguide 5 and substrate layer 1 is at grade, described
The first graphene coating 6 is provided with two-arm direct light waveguide 5, the first graphene coating 6 includes setting gradually from top to bottom
The second graphene layer 63, the graphene layer 61 of molybdenum disulfide 62 and first, the second electrode 65 connected on the second graphene layer 63,
The electrode 66 of first electrode 64 and the 3rd connected on first graphene layer 61, the electrode 66 of first electrode 64 and the 3rd is not in contact with institute
State input and output adjustable grating 2 and be provided with the second graphene coating, the second graphene coating is included from top to bottom successively
The 4th graphene layer 73, the graphene layer 71 of boron nitride separation layer 72 and the 3rd set, is arranged on the 4th graphene layer 73
5th electrode 75 and the 4th electrode 74 being arranged on the 3rd graphene layer 71.Wherein, the 3rd graphene layer 71 and the 4th graphite
Alkene layer 73 is interdigitated electrode structure.
As a kind of preferred mode of the present invention, the first graphene layer 61 on the first graphene coating 6 and the
Two graphene layers 63 separate composition hetero-junctions by molybdenum disulfide 62.
The two-arm direct light waveguide 5 includes reference arm 51 and modulation arm 52, and first graphene layer 61 is from reference arm 51
Stretch out with modulation arm 52, and be connected respectively with the 3rd electrode 66 in the first electrode 64 and modulation arm 52 on reference arm 51
Connect, second graphene layer 63 is covered on reference arm 51 and modulation arm 52, and with being located in reference arm 51 and modulation arm 52
Between second electrode 65 be connected.
The waveguiding structure of the input and output adjustable grating 2 is burial type waveguide, and the 3rd graphene layer 71 stretches out
And it is connected to the 4th electrode 74, the 4th graphene layer 73 stretches out and is connected to the 5th electrode 75.
The branch-waveguide of the M-Z modulators is S flexure types y branch waveguide 4.
The material of the substrate layer 1 is silica.
The input and output adjustable grating 2, input and output direct light waveguide 3, S flexure types y branch waveguide 4 and two-arm direct light
The waveguide material of waveguide 5 is silicon nitride.
The first electrode 64, second electrode 65, the 3rd electrode 66, the material of the 4th electrode 74 and the 5th electrode 75 are
Any one in gold, silver, copper, platinum, titanium, nickel, cobalt, palladium or any two or more alloy.
The optical modulator operation principle of the present invention is as follows：
Bias voltage is added on the second graphene coating by the 4th electrode 74 and the 5th electrode 75, changes biased electrical
Pressure, is made with extra electric field to be changed using the effective refractive index of the interdigitated electrode structure periodically waveguide of the graphene of covering and changed
Become, the refractive index of the waveguide covered without graphene keeps constant, so on the direction that light is propagated, effective refraction of waveguide
Cyclically-varying is presented with the change of extra electric field in rate, and because the resonance wavelength of grating is relevant with effective refractive index, shape
Into tunable waveguide optical grating.
For M-Z electrooptic modulators, when bias voltage is distinguished by first electrode 64, second electrode 65, the 3rd electrode 66
When being added on the first graphene coating 6 on reference arm 51 and modulation arm 52, the complex dielectric permittivity of graphene is by outer power-up
The tuning of field, so as to influence the refraction of two-arm direct light 5 pairs of light of waveguide so that the phase of light wave changes, in output S flexure types
Interfered at y branch waveguide 4.Molybdenum disulfide 62 has with the complementary electrical and optical properties of graphene, can play two sulphur
Change the advantage of molybdenum and graphene, the hetero-junctions of composition can strengthen the interaction of light and material.When first electrode 64 and the 3rd
When the voltage of electrode 66 is identical, i.e., in quiescent point, the phase difference of reference light wave and modulated light wave is 0, and the two occurs phase
Dry mutually long, output intensity is maximum, equivalent to " ON " state；When first electrode 64 is different with the voltage of the 3rd electrode 66 and reference light
When the phase difference of ripple and modulated light wave is π, the two occurs coherent subtraction, and output intensity is minimum, equivalent to " OFF " state.Therefore,
The intensity to optical signal can be achieved by the optical characteristics for the first graphene coating 6 for regulating and controlling reference arm 51 and modulation arm 52
Modulation.
Embodiment one
With reference to accompanying drawing, the present embodiment uses wavelength for 1.55 μm of light wave, and the material of substrate layer 1 is silica, is inputted defeated
Go out adjustable grating 2, input and output direct light waveguide 3, S flexure types y branch waveguide 4, two-arm direct light waveguide 5 waveguide material be nitrogen
SiClx, input and output adjustable grating 2, input and output direct light waveguide 3, S flexure types y branch waveguide 4, two-arm direct light waveguide 5
The width and thickness of waveguide are respectively 1 μm and 0.3 μm.First electrode 64, second electrode 65, the 3rd electrode 66, the 4th electrode 74
Material with the 5th electrode 75 is gold.
Fig. 4 is the present embodiment electrooptic modulator operation principle schematic diagram, first the 4th to input and output adjustable grating 2
Electrode 74 and the applied voltage of the 5th electrode 75, it is V to make voltage difference3, regulate and control the effective refractive index of graphene so that adjustable grating
The optical resonance of 2 pair of 1.55 mum wavelength meets formula：
λB=2neff·Λ·sinθ (1)
In formula, neffFor the effective refractive index of sandwich layer waveguide, n in this exampleeffAssociative mode effective refractive index,It is multiple with graphene
Refractive index is closely related；Λ is screen periods, i.e. interdigital electrode spacing；θ is the incident shooting angle of light wave；λBFor resonance wavelength,
1.55 μm are taken as in this example.N in formulaeffBy applied voltage V3Regulation and control.
Graphene complex refractivity index is regulated and controled by electric field, i.e., when first electrode 64 and the corresponding voltage V of the 3rd electrode 661With V2Occur
During change, graphene complex refractivity index changes, and associative mode effective refractive index changes.
Make V1With V2Value is identical, then reference arm 51 is identical with the pattern effective refractive index of light wave in modulation arm 52, two light waves
After by two-arm, corresponding phase difference is 0, is interfered mutually long so that transmitance is maximum, i.e. " ON " state；Then ginseng is changed
Examine arm voltage V1With modulation arm voltage V2Value, make V1And V2The minimum value and maximum of difference associative mode effective refractive index real part
Value, phase differenceIt is shown below with the relation of effective refractive index：
In formula, Δ Re (neff)For the knots modification of pattern effective refractive index real part in waveguide；λ is incident wavelength；L is reference
The length of arm 51 and modulation arm 52.By controlling brachium to make two light waves be π by corresponding phase difference after two-arm, phase is interfered
Disappear so that transmitance is minimum, i.e. " OFF " state, so as to realize modulation.
Claims (7)
1. a kind of M-Z electrooptic modulators with adjustable grating based on graphene-molybdenum disulfide hetero-junctions, it is characterised in that：
Including substrate layer (1), it is embedded and is sequentially connected the input and output adjustable grating (2), the input and output direct light that connect in the substrate layer (1)
Waveguide (3), S flexure types y branch waveguide (4) and two-arm direct light waveguide (5), the input and output adjustable grating (2), input are defeated
Go out the upper of direct light waveguide (3), the waveguide top surface of S flexure types y branch waveguide (4) and two-arm direct light waveguide (5) and substrate layer (1)
Surface at grade, is provided with the first graphene coating (6) on the two-arm direct light waveguide (5), the first graphene covers
Cap rock (6) includes the second graphene layer (63), molybdenum disulfide (62) and the first graphene layer (61) set gradually from top to bottom,
The first electrode (64) connected on the second electrode (65) connected on second graphene layer (63), the first graphene layer (61) and
Three electrodes (66), first electrode (64) and the 3rd electrode (66) are not in contact with the input and output adjustable grating (2) is provided with
Two graphene coatings, the second graphene coating includes the 4th graphene layer (73), the boron nitride set gradually from top to bottom
Separation layer (72) and the 3rd graphene layer (71), the 5th electrode (75) being arranged on the 4th graphene layer (73) and are arranged on
The 4th electrode (74) on three graphene layers (71), the 3rd graphene layer (71) and the 4th graphene layer (73) are interdigital electrode
Structure.
2. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The first graphene layer (61) and the second graphene layer (63) quilt on the first graphene coating (6)
Molybdenum disulfide (62) separates composition hetero-junctions.
3. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The two-arm direct light waveguide (5) includes reference arm (51) and modulation arm (52), first graphene layer
(61) stretch out from reference arm (51) and modulation arm (52), and respectively with the first electrode (64) on reference arm (51) and modulation
The electrode (66) of arm (52) the 3rd is connected, and second graphene layer (63) is covered on reference arm (51) and modulation arm (52),
And be connected with the second electrode (65) being located in the middle of reference arm (51) and modulation arm (52).
4. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The waveguiding structure of input and output adjustable grating (2) be burial type waveguide, the 3rd graphene layer (71) to
Outer extend simultaneously is connected to the 4th electrode (74), and the 4th graphene layer (73) stretches out and is connected to the 5th electrode (75).
5. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The material of the substrate layer (1) is silica.
6. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The input and output adjustable grating (2), input and output direct light waveguide (3), S flexure type y branch waveguides
And the waveguide material of two-arm direct light waveguide (5) is silicon nitride (4).
7. the M-Z Electro-optical Modulations with adjustable grating according to claim 1 based on graphene-molybdenum disulfide hetero-junctions
Device, it is characterised in that：The first electrode (64), second electrode (65), the 3rd electrode (66), the 4th electrode (74) and the 5th electricity
The material of pole (75) is any one in gold, silver, copper, platinum, titanium, nickel, cobalt, palladium or any two or more alloy.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015052A (en) * | 1989-07-20 | 1991-05-14 | Battelle Memorial Institute | Optical modulation at millimeter-wave frequencies |
| US5835643A (en) * | 1995-09-29 | 1998-11-10 | Minolta Co., Ltd. | Waveguide input/output device |
| US20110243492A1 (en) * | 2010-04-06 | 2011-10-06 | Samsung Electronics Co., Ltd. | Silicon based optical modulators and methods of fabricating the same |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN106501970A (en) * | 2016-12-19 | 2017-03-15 | 电子科技大学 | A kind of tunable waveguide optical grating based on silicon waveguide Graphene |
-
2017
- 2017-06-02 CN CN201710409585.6A patent/CN107037613A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015052A (en) * | 1989-07-20 | 1991-05-14 | Battelle Memorial Institute | Optical modulation at millimeter-wave frequencies |
| US5835643A (en) * | 1995-09-29 | 1998-11-10 | Minolta Co., Ltd. | Waveguide input/output device |
| US20110243492A1 (en) * | 2010-04-06 | 2011-10-06 | Samsung Electronics Co., Ltd. | Silicon based optical modulators and methods of fabricating the same |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN106501970A (en) * | 2016-12-19 | 2017-03-15 | 电子科技大学 | A kind of tunable waveguide optical grating based on silicon waveguide Graphene |
Non-Patent Citations (1)
| Title |
|---|
| LONGZHI YANG,TING HU,RAN HAO ET AL: "Low-chirp high-extinction-ratio modulator based on graphene–silicon waveguide", 《OPTICS LETTERS》 * |
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