CN110147000A - A kind of organic polymer optical waveguide absorption-type optical modulator based on burial type Graphene electrodes - Google Patents

A kind of organic polymer optical waveguide absorption-type optical modulator based on burial type Graphene electrodes Download PDF

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CN110147000A
CN110147000A CN201910606123.2A CN201910606123A CN110147000A CN 110147000 A CN110147000 A CN 110147000A CN 201910606123 A CN201910606123 A CN 201910606123A CN 110147000 A CN110147000 A CN 110147000A
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organic polymer
layer
graphene
waveguide
polymer waveguide
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王希斌
廉天航
张大明
姜明慧
王力磊
牛东海
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Jilin University
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Jilin University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

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  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

A kind of organic polymer optical waveguide absorption-type optical modulator based on burial type Graphene electrodes belongs to the planar optical waveguide absorption-type light modulator technologies field based on graphene.It is made of substrate layer, organic polymer waveguide under-clad layer, the first organic polymer waveguide sandwich layer, the first graphene layer, dielectric insulation layer, the second graphene layer, the second organic polymer waveguide sandwich layer, organic polymer waveguide top covering, left electrode and right electrode.The present invention carries out the design of waveguiding structure using organic polymer material, and graphene layer is transferred to the centre of waveguide core layer, enable Interaction enhanced of the graphene with light, to realize faster carrier mobility rate, the operating rate of optical modulator is improved, it can regulation when using organic polymer material without electrooptic effect, by bias voltage to graphene chemical potential, also it is able to achieve the function of electrooptic modulator, to achieve the purpose that reduce device cost.

Description

A kind of organic polymer optical waveguide absorption-type light tune based on burial type Graphene electrodes Device processed
Technical field
The invention belongs to the planar optical waveguide absorption-type light modulator technologies fields based on graphene, and in particular to it is a kind of with Silicon is as substrate, organic polymer material as the organic poly- based on burial type Graphene electrodes of waveguide core layer and clad material Close object light waveguide absorption-type optical modulator.
Background technique
Constantly it is applied in information communication with technologies such as big data, cloud computings in recent years, so that IT application process is continuous Accelerate, this also results in communication service and the growth of blowout occurs.It is shown according to related data, Baidu, Ali, movement, connection For equal data centers' data information flow to be treated just in cumulative year after year, this trend makes people to two-forty signal It propagates and the optical module demand of modulation function increases very fast.Optical modulator has indispensable role in optical communication system, It is a ring indispensable in entire optical communication system framework.
In optical fiber telecommunications system and light network, optical modulator is important one of optical device, with it is small in size, with The advantages such as lower, good environment compatibility are lost in fiber coupling, its working principle is that the telecommunications that will be loaded with specific information coding It number is loaded on light wave, adjusts the absorption of optical signal or the change of phase in waveguide, to achieve the purpose that encode light wave. Optical modulator can be divided into several classes such as hot light, electric light, acousto-optic modulator according to its modulation system, and applied basic theories is The effects such as hot light, electric light, acousto-optic due to different materials.In current optical communication network, optical modulator makes material according to it The difference of material is broadly divided into InP-base optical modulator, lithium niobate optical modulator, silicon substrate optical modulator and organic polymer object light tune Device processed, InP-base modulator and lithium niobate modulator therein all can be used for commercial applications, this shows that they have respectively From the advantages of, but in practical applications again there is the modulation rates of many performance limitations, such as lithium niobate modulator Although realizing higher 40Gb/s, its room for promotion has also reached the limit of device architecture, and device size is larger； The problems such as manufacturing process of InP-base modulator is difficult, material cost is high and can generate chirp in modulated signal.And silicon substrate Although modulator can be mutually compatible with the technique of CMOS, due to the limitation of its own material, modulation bandwidth and modulation speed Rate is all restricted.Optical modulator based on Poled Polymeric Electro optic Materials, compared with the modulator of other materials, organic polymer Object can be numerous with material category, there is that cheap, compatible with CMOS technology and optical fiber coupling loss is lower, optical signal biography The lower advantage of defeated loss, while having in the electro-optical modulation device research for low energy consumption, high modulation rate more prominent The advantages of, but this modulator depends critically upon the stabilization of the performance of Poled Polymeric Electro optic Materials, especially electrooptical material Property.
In recent years, it is prepared with the discovery of this material of graphene and successfully, its own possessed physics, change Characteristic is learned, so that the combination of graphene and electrooptic modulator has obtained extensive concern.Grapheme material has monatomic thickness Degree, because of its own special atomic arrangement and band structure, the carrier concentration of superelevation and its migration rate, light at room temperature Learn the spectral absorption range of easily controllable property, 2.3% absorptivity being kept approximately constant and ultra-wide, it is often more important that Have the advantages that it is mutually compatible with traditional cmos process technology, so the photoelectric device containing grapheme material can have with light wave Very strong interaction, the modification scope of high bandwidth, high rate modulation, thus grapheme material is considered as making electrooptic modulator Ideal material, this makes the opto-electronic device based on graphene have good development trend and important scientific research valence Value.There is many research for the electrooptic modulator of graphene at present, these researchs are usually using bias voltage to stone The regulation of black alkene chemical potential, thus make the optical characteristics of graphene change so that influence waveguide in light field, this that is to say, The bright interaction for how enhancing graphene and light field will directly affect the working performance of graphene modulator.Currently based on silicon substrate Graphene electro-optical modulator had many research, it is contemplated that its preparation process, graphene can be only positioned at mostly The surface of silicon waveguide does not reach optimum efficiency with the Degree of interaction of light.
Summary of the invention
The main purpose of the present invention is to provide a kind of, and the organic polymer optical waveguide based on burial type Graphene electrodes is inhaled Receipts type optical modulator, interaction to solve graphene present in current modulator and light is weak, higher cost, Electro-optical Modulation The lower problem of efficiency.
Absorption-type optical modulator based on graphene its working principle is that: the absorptivity of single-layer graphene material can lead to It crosses and graphene application voltage is controlled.When applying voltage to graphene, hole in grapheme material, electronics can be enabled dense Degree changes, so that its fermi level changes, and then the interior light with interband of the band for changing grapheme material is inhaled Yield.By graphene absorptivity with applied voltage variation relation curve it is found that its image curve two positions there is One maximum value and minimum value, the two positions correspond to light-path (on) in optical transmission process and light is breaking (off).According to This characteristic can regulate and control graphene by applied voltage to be modulated indirectly to the optical signal of transmission, by changing this The characteristic of on-off, is modulated on light carrier.
The present invention has carried out relevant optimization design from structure and material, proposes based on burial type Graphene electrodes Organic polymer optical waveguide absorption-type optical modulator.On substrate layer, made using a kind of organic polymer material of low-refraction For the under-clad layer of waveguide, using another high refractive index organic polymer material as the sandwich layer of waveguide, in waveguide core layer interposition The first graphene layer of placement location and the second graphene layer, and be situated between and insert dielectric insulation layer, then with under-clad layer phase Top covering of the same material as waveguide.In device work, since graphene is buried in organic polymer optical waveguide sandwich layer Inside, can largely enhance the interaction of graphene and light, and since grapheme material itself has very High carrier mobility rate, bilayer graphene structure can be realized carrier and faster migrate, to realize faster Photoelectric conversion efficiency and higher modulation depth.The present invention not only combines the excellent physics of grapheme material, chemistry, optics And mechanical property, also will, the advantages such as flexibly simple using organic polymer material processing technology, graphene is buried in optical waveguide The inside of sandwich layer.Therefore, high-speed, small size, low energy can be prepared by grapheme material being used for organic polymer modulator The novel light modulator of consumption, low cost has very great meaning in optical fiber telecommunications system and on piece optical interconnection technical application Justice.This modulator structure, only the research and development of organic polymer optical waveguide and its integrated chip do not provide new approaches and new Method, while will also lay a good foundation for China in the fast development of organic polymer planar optical waveguide integrated chip, city Field has a extensive future.
Present example is to reach above-mentioned requirements, and the specific technical solution taken is as follows:
As shown in Fig. 1, a kind of bar shaped organic polymer optical waveguide absorption-type light tune based on burial type Graphene electrodes Device processed, by substrate layer 1, organic polymer waveguide under-clad layer 2, the first organic polymer waveguide sandwich layer 9, the first graphene layer 8, electricity Dielectric insulation layer 10, the second graphene layer 3, the second organic polymer waveguide sandwich layer 6, organic polymer waveguide top covering 5, left electricity Pole 7 and right electrode 4 form；First organic polymer waveguide sandwich layer 9 and the second organic polymer waveguide sandwich layer 6 collectively form light tune The waveguide core layer of device processed；First organic polymer waveguide sandwich layer 9 is located at the upper middle position of organic polymer waveguide under-clad layer 2 It sets, upper surface and the left side upper surface of organic polymer waveguide under-clad layer 2 are generally aligned in the same plane, in the first organic polymer object wave The left side upper surface of the upper surface and organic polymer waveguide under-clad layer 2 of leading sandwich layer 9 is provided with the first graphene layer 8；Second has Machine polymer waveguide sandwich layer 6 is located at the lower middle position of organic polymer waveguide top covering 5, lower surface and organic polymer The right side lower surface of waveguide under-clad layer 5 is generally aligned in the same plane, in the lower surface of the second organic polymer waveguide sandwich layer 6 and organic poly- The right side lower surface that conjunction object wave leads top covering 5 is provided with the first graphene layer 3；Width (the x of organic polymer waveguide top covering 5 Direction) it is less than the width of organic polymer waveguide under-clad layer 2, left electrode 7 and right electrode 4 are located at organic polymer waveguide top covering The upper surface of the first graphene layer 8 and the second graphene layer 3 that 5 left and right sides are exposed；The upper surface of first graphene layer 8 is lower than There is certain overlap in the lower surface of second graphene layer 3 in the intermediate region of optical modulator between the two；Dielectric insulation layer 10 is set It sets between the first graphene layer 8 and the second graphene layer 3, and is located at the overlapping of the first graphene layer 8 and the second graphene layer 3 In region, the width and dielectric insulation layer 10, the first organic polymer waveguide sandwich layer 9 and the second organic polymer of overlapping region Waveguide core layer 6 it is of same size.
Organic polymer waveguide under-clad layer 2 is identical with the material of organic polymer waveguide top covering 5, the first organic polymer Waveguide core layer 9 is identical with the material of the second organic polymer waveguide sandwich layer 6；
The substrate layer material is silica, silicon nitride, any one in silicon, and width is 1mm~3mm, thickness (direction y) is 300 μm~800 μm；
The first low-refraction organic polymer material serves as organic polymer waveguide top covering 5 and under-clad layer 2, material choosing It is taken as EpoCore, EpoClad, polymethyl methacrylate (PMMA), polyethylene (PE), polyester (PET), polystyrene (PS) In any one.Second of high refractive index organic polymer material, which serves as the first organic polymer waveguide sandwich layer 9 and second, to be had Machine polymer waveguide sandwich layer 6, material selection are SU-8 2002, in SU-8 2005, polycarbonate (PC), polyimides (PI) Any one.
Further, the width of the organic polymer waveguide under-clad layer 2 of the strip-shaped convection guide structure is 1mm~3mm, thick Degree is 6 μm~10 μm.
Further, the width of the organic polymer waveguide top covering 5 of the strip-shaped convection guide structure is 100 μm~800 μ M, with a thickness of 6 μm~10 μm.
Further, the first organic polymer waveguide sandwich layer 6 and the second organic polymer waveguide sandwich layer 9 is of same size, It is 2 μm~5 μm；First organic polymer waveguide sandwich layer 9 is identical with the thickness of the second organic polymer waveguide sandwich layer 6, be 1 μm~ 4μm。
Further, the material of the dielectric insulation layer 10 can be chosen for aluminum oxide, hexagonal boron nitride, titanium dioxide Any one in silicon, the dielectric insulation layer with a thickness of 5nm~10nm.The width of dielectric insulation layer and first organic Polymer waveguide sandwich layer 9 and the second organic polymer waveguide sandwich layer 6 it is of same size, be 2 μm~5 μm；
Further, first graphene layer 8 and the second graphene layer 3 are single-layer graphene, and thickness is mutually all 0.35nm~0.7nm, of same size is 500 μm~1.5mm, and the width of overlapping region is 3 μm~4.5 μm；
Further, the material of the left electrode 7 and right electrode 4 can be any one in silver, gold, aluminium, platinum or more The alloy of kind composition, the left electrode and right electrode and the first organic polymer waveguide sandwich layer 9 and the second organic polymer waveguide The distance between sandwich layer 6 is equal, is 100 μm~800 μm；The left electrode 7 and right electrode 4 its it is of same size be 500 μm~ 1000 μm, thickness is mutually all 100nm~300nm.
Compared with existing device architecture and technology of preparing, the beneficial effects of the present invention are: using organic polymer material into The design of traveling wave guide structure, and graphene layer is transferred to the centre of waveguide core layer is different from and previous places graphene layer In the surface of waveguide, so that graphene can with the Interaction enhanced of light, to realize faster carrier mobility speed Rate improves the operating rate of optical modulator, can pass through bias voltage when using the organic polymer material without electrooptic effect Regulation to graphene chemical potential, is also able to achieve the function of electrooptic modulator, thus achieve the purpose that reduce device cost, this Outside, organic polymer material has that type is more, processing technology is simple and the advantages such as flexibly, easily prepared, it is basic herein on can To realize more more complicated light modulator structures and its integrated chip.
Detailed description of the invention
Fig. 1 is the organic polymer optical waveguide absorption-type optical modulator of the present invention based on burial type Graphene electrodes Cross-sectional view.
Fig. 2 is the organic polymer optical waveguide absorption-type optical modulator of the present invention based on burial type Graphene electrodes Threedimensional model schematic diagram.
Fig. 3 is the variation relation curve of modulator unit distance transmission loss of the invention with chemical potential.
Fig. 4 is the variation relation curve of modulator chemical potential of the invention with applying bias voltage.
Fig. 5 is the variation relation curve of modulators modulate depth of the invention with device active region length.
Fig. 6 is the variation relation curve of modulator extinction ratio of the invention with device active region length.
Fig. 7 is the variation relation curve of modulator light field effective refractive index real part of the invention with chemical potential.
Fig. 8 is the variation relation curve of modulator light field effective refractive index imaginary part of the invention with chemical potential.
Fig. 9 is modulator optical field distribution simulation drawing of the invention.
Specific embodiment
In order to which the purpose of design, innovative characteristics and the advantage that allow the present embodiment to be embodied are more intuitive and easy to understand, referring next to Specific embodiments and the drawings are further illustrated the present invention.
Embodiment 1
As shown in Fig. 1, a kind of bar shaped organic polymer optical waveguide absorption-type light tune based on burial type Graphene electrodes Device processed, by substrate layer 1, organic polymer waveguide under-clad layer 2, the first organic polymer waveguide sandwich layer 9, the first graphene layer 8, electricity Dielectric insulation layer 10, the second graphene layer 3, the second organic polymer waveguide sandwich layer 6, organic polymer waveguide top covering 5, left electricity Pole 7 and right electrode 4 form；The width of organic polymer waveguide top covering 5 is less than the width of organic polymer waveguide under-clad layer 2, Left electrode 7 and right electrode 4 are located at the first graphene layer 8 and the second stone exposed at left and right sides of organic polymer waveguide top covering 5 The upper surface of black alkene layer 3；First organic polymer waveguide sandwich layer 9 is located at the upper middle position of organic polymer waveguide under-clad layer 2 It sets, upper surface and the right side upper surface of organic polymer waveguide under-clad layer 2 are generally aligned in the same plane, and are arranged in the top of the plane There is the first graphene layer 8；Second organic polymer waveguide sandwich layer 6 is located at the lower middle position of organic polymer waveguide top covering 5 It sets, lower surface and the right side lower surface of organic polymer waveguide under-clad layer 5 are generally aligned in the same plane, and are arranged in the lower section of the plane There is the first graphene layer 3；The upper surface of first graphene layer 8 is lower than the lower surface of the second graphene layer 3, between the two in light modulation The intermediate region of device have certain overlapping, overlapping width and dielectric insulation layer 10, the first organic polymer waveguide sandwich layer 9 and Second organic polymer waveguide sandwich layer 6 it is of same size；Dielectric insulation layer 10 is arranged in the first organic polymer waveguide sandwich layer 9 And second between organic polymer waveguide sandwich layer 6, by between the first organic polymer waveguide sandwich layer 9 and dielectric insulation layer 10 One graphene layer 8 separates, and is divided between dielectric insulation layer 10 and the second organic polymer waveguide sandwich layer 6 by the second graphene layer 3 It opens.
In the present embodiment, using silicon wafer as substrate layer, with a thickness of 500 μm, width 1.9mm.
In the present embodiment, organic polymer waveguide under-clad layer 2 and organic polymer waveguide top covering 5 are organic using low folding rate Polymer material is selected as EpoClad.
In the present embodiment, organic polymer under-clad layer 2 with a thickness of 6 μm, width is of same size with substrate layer, be 1.9mm.
In the present embodiment, organic polymer top covering 5 with a thickness of 8 μm, width is 500 μm.
In the present embodiment, the first organic polymer waveguide sandwich layer 6 and 9 material of the second organic polymer waveguide sandwich layer are selected as SU-8 2002。
In the present embodiment, the thickness of the first organic polymer waveguide sandwich layer 9 and the second organic polymer waveguide sandwich layer 6 is 2 μm, width is 2 μm.
In the present embodiment, the first organic polymer waveguide sandwich layer 6 and the second organic polymer waveguide sandwich layer 9 have been located at On the direction the x middle position of machine polymer waveguide under-clad layer 2.
In the present embodiment, the first graphene layer 3, dielectric insulation layer 10, the second graphene layer 8 is placed sequentially in first has Between machine polymer waveguide sandwich layer 6 and the second organic polymer waveguide sandwich layer 9.
In the present embodiment, dielectric insulation layer 10 is located at the middle position of waveguide core layer, above and is in turn below First graphene layer 3 and the second graphene layer 8.
In the present embodiment, the material that dielectric insulation layer 10 uses is aluminum oxide, and with a thickness of 5nm, width is 4 μ m。
In the present embodiment, the first graphene layer 3 and the second graphene layer 8 with a thickness of 0.7nm, width is 950 μm.
In the present embodiment, the intermediate overlapping region length of the first graphene layer 3 and the second graphene layer 8 is 4 μm.
In the present embodiment, the first graphene layer 3 and the second graphene layer 8 are single-layer graphene.
In the present embodiment, graphene layer is placed on to the phase interaction that graphene can be enhanced among waveguide core layer with light field With.
In the present embodiment, metal electrode select material be gold, width be 700 μm, with a thickness of 200nm, left electrode with The distance between right electrode is 500 μm.
As shown in Fig. 2, being the organic polymer optical waveguide absorption-type of the present invention based on burial type Graphene electrodes The threedimensional model schematic diagram of optical modulator, wherein L is the active area length of the modulator, i.e. modulator waveguide working region is long Degree.
As shown in figure 3, the unit distance transmission loss (MPA) simulated using COMSOL software for the present embodiment is with graphene The variation relation curve of chemical potential (chemical potential is a kind of physical property that graphene itself has), it can be seen that MPA is in 0.4eV Nearby there is a violent rapid drawdown, this is because when the chemical potential of grapheme material is higher than 0.4eV, so that its internal electron Band-to-band transition is inhibited, so that MPA is reduced.
As shown in figure 4, the modulator graphene chemical potential that the present embodiment is simulated using COMSOL software is with biasing outside electrode The variation relation curve for setting voltage (applying bias voltage between left electrode and right electrode) is being applied known to the MPA curve in Fig. 2 When the bias voltage added is lower, at this time corresponding graphene chemical potential be 0eV, very greatly 0.03266dB/ μm of corresponding MPA value, Biggish decaying has occurred in the optical signal transmitted in waveguide, and μ=0eV transmission state at this time is denoted as " off " state.Work as application Bias voltage it is higher when, at this time corresponding graphene chemical potential be 0.5eV, corresponding MPA value very little be 0.00143dB/ μm, μ=0.45eV transmission state at this time is denoted as " on " state, corresponding bias voltage is 0.68V as shown in Figure 3 at this time, then two The voltage difference switched between kind transmission state is Δ U=0.68V.
As shown in figure 5, the modulators modulate depth that the present embodiment is simulated using COMSOL software is with device active region length Variation relation curve, as seen from the figure the active area length of device be 5mm when, modulation depth has reached higher 80dB。
As shown in fig. 6, variation relation curve of the modulator extinction ratio of the present embodiment with device active region length, extinction ratio When referring to that optical modulator is in running order, maximum luminous power value P is transmittedmaxWith transmission minimum optical power value PminRatio:WhereinI0For original incident light intensity,WithRespectively absorption coefficient minimum value and maximum value, k are light field effective refractive index imaginary part, kmax=0.198, kmin =0.0008378, λ are that incident wavelength is taken as 1550nm, and L is the active area length of device, is based on the above parameter and the derivation of equation Extinction ratio changes formula: EXT=8.686 (α with device active region length outmax-αmin) L, device realizes 30dB's as seen from the figure It is 2mm that extinction ratio, which requires the active area length of device,.
As shown in fig. 7, (light field is effective for the light field effective refractive index for the modulator that the present embodiment is simulated using COMSOL software The amount of unit length phase delay in one quantitative description waveguide of refractive index, relative to unit length phase delay in vacuum Speech, refers to the refractive index seen when mode light is propagated in the waveguide, is become relative to wavelength and the geometry of waveguide Change) real part is with the variation relation curve of chemical potential, and chemical potential is in 0eV to 0.4eV range, and effective refractive index real part is in rising Trend, when chemical potential is greater than 0.4eV, effective refractive index real part is gradually reduced, and is changed linearly in 0.5eV to 1eV.
As shown in figure 8, the modulator light field effective refractive index imaginary part that the present embodiment is simulated using COMSOL software is with chemistry The variation relation curve of gesture can reflect out MPA situation of change by 40 π log (e) Im (Neff) of formula/λ, and wherein λ is incident light Wavelength, Im (Neff) are light field effective refractive index imaginary part.
As shown in figure 9, the optical field distribution simulation drawing that the present embodiment is simulated using COMSOL software, from image it can be seen that light Field is limited in well in waveguide and shape is good, and distribution of light intensity is higher at waveguide core position, enhance graphene with The interaction of light field.
Embodiment 1:
Signal of the load on incident light is modulated, usually changes complex index with external modulation input, with This achievees the purpose that change input light phase or amplitude.The real part of complex index is general described refractive index, corresponding light wave The change of phase, the modulator of this principle are commonly referred to as phase type optical modulator.The imaginary part of complex index is to light wave Absorbability is expressed as the loss of light, and the modulator using this principle is commonly referred to as absorption-type optical modulator.The present invention is to utilize Graphene has the absorption-type optical modulator of good absorption ability to light.
Parameter used in device architecture of the invention is: substrate layer material is silicon wafer, the thickness of organic polymer waveguide sandwich layer It is 4 μm with width；The first low-refraction organic polymer material selects EpoClad, refractive index 1.559, second high folding It penetrates rate organic polymer material and selects SU-8 2002, refractive index 1.572；First graphene layer and the second graphene layer are all Single-layer graphene, with a thickness of 0.7nm, lap width is 4 μm；Dielectric insulation layer material is aluminum oxide, thick Degree is 5nm, and width is 4 μm；Metal electrode material is gold；The contact resistance R of metal electrode and grapheneG-MNumerical value reference It is 400 Ω-μm.Regulated and controled formula by applying bias voltage by graphene chemical potentialStone can be obtained Applying bias voltage range of the black alkene chemical potential corresponding to 0eV to 1eV, wherein μ be graphene chemical potential, h ≈ 1.05 × 10-34For simplified planck constant, Fermi velocity vF=1.49 × 106M/s, VD=0.8V is to adulterate in graphene manufacturing process Caused bias, VgIndicate the pressure drop between metal electrode, | Vg-VD| can approximation regard as additional bias voltage, wherein a0=ε0 εr/ de is, ε obtained by simple capacity plate antenna model0For permittivity of vacuum, εrIt is respectively dielectric insulation layer with d Relative dielectric constant and thickness, e are the unit quantity of electric charge.By the equivalent circuit of the modulator electrode structure it is found that Rtotal=2Rc, And Rc=RG-M/LG-M, LG-MFor the length of overlapped part of metal electrode and graphene, it is taken as 5 μm；S=L × W For the capacity plate antenna area of bilayer graphene lap, W=4 μm is the overlapping of the first graphene layer 8 and the second graphene layer 3 Peak width.By 3-dB modulation bandwidth formulaObtaining 3-dB bandwidth is 3.12GHz, and modulator consumes energy FormulaWherein Δ U is the corresponding additional bias voltage range of chemical potential 0eV to 1eV, is 3.34V, then Acquire Ebit=88.9pJ/bit.

Claims (9)

1. a kind of organic polymer optical waveguide absorption-type optical modulator based on burial type Graphene electrodes, it is characterised in that: from Under it is supreme successively by substrate layer (1), organic polymer waveguide under-clad layer (2), the first organic polymer waveguide sandwich layer (9), first Graphene layer (8), dielectric insulation layer (10), the second graphene layer (3), the second organic polymer waveguide sandwich layer (6), You Jiju It closes object wave and leads top covering (5), left electrode (7) and right electrode (4) composition；First organic polymer waveguide sandwich layer (9) and second has Machine polymer waveguide sandwich layer (6) collectively forms the waveguide core layer of optical modulator；First organic polymer waveguide sandwich layer (9), which is located at, to be had Table on the left side of the upper middle position of machine polymer waveguide under-clad layer (2), upper surface and organic polymer waveguide under-clad layer 2 Face is generally aligned in the same plane, upper surface and organic polymer waveguide under-clad layer (2) in the first organic polymer waveguide sandwich layer (9) Left side upper surface is provided with the first graphene layer (8)；Second organic polymer waveguide sandwich layer (6) is located on organic polymer waveguide It is put down positioned at same the right side lower surface of the lower middle position of covering (5), lower surface and organic polymer waveguide under-clad layer (5) Face is set in the lower surface of the second organic polymer waveguide sandwich layer (6) and the right side lower surface of organic polymer waveguide top covering (5) It is equipped with the first graphene layer (3)；The width of organic polymer waveguide top covering (5) is less than organic polymer waveguide under-clad layer (2) Width, left electrode (7) and right electrode (4) are located at the first graphite exposed at left and right sides of organic polymer waveguide top covering (5) The upper surface of alkene layer (8) and the second graphene layer (3)；The upper surface of first graphene layer (8) is lower than the second graphene layer (3) There is certain overlap in lower surface in the intermediate region of optical modulator between the two；Dielectric insulation layer (10) is arranged in the first graphite Between alkene layer (8) and the second graphene layer (3), and it is located at the overlapping region of the first graphene layer (8) and the second graphene layer (3) It is interior, width and dielectric insulation layer (10), the first organic polymer waveguide sandwich layer (9) and the second organic polymer of overlapping region Waveguide core layer (6) it is of same size.
2. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: organic polymer waveguide under-clad layer (2) is identical with the material of organic polymer waveguide top covering (5), and first Organic polymer waveguide sandwich layer (6) is identical with the material of the second organic polymer waveguide sandwich layer (9).
3. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: substrate layer (1) material is silica, silicon nitride, any one in silicon, and width is 1mm~3mm, With a thickness of 300 μm~800 μm.
4. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the material of organic polymer waveguide top covering (5) and organic polymer waveguide under-clad layer (2) is EpoCore, EpoClad, polymethyl methacrylate, polyethylene, polyester, any one in polystyrene；First is organic poly- The material for closing object waveguide core layer (9) and the second organic polymer waveguide sandwich layer (6) is SU-8 2002, SU-8 2005, poly- carbonic acid Any one in ester, polyimides.
5. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the width of organic polymer waveguide under-clad layer (2) is 1mm~3mm, with a thickness of 6 μm~10 μm；It is organic poly- Closing object wave and leading the width of top covering (5) is 100 μm~800 μm, with a thickness of 6 μm~10 μm.
6. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the first organic polymer waveguide sandwich layer (9) and the second organic polymer waveguide sandwich layer (6) it is of same size, It is 2 μm~5 μm；Thickness is identical, is 1 μm~4 μm.
7. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the material of dielectric insulation layer (10) is aluminum oxide, hexagonal boron nitride, any in silica One kind, dielectric insulation layer (10) with a thickness of 5nm~10nm；The width and the first organic polymer of dielectric insulation layer (10) Waveguide core layer (9) and the second organic polymer waveguide sandwich layer (6) it is of same size, be 2 μm~5 μm.
8. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the first graphene layer (8) and the second graphene layer (3) are single-layer graphene, and thickness is identical, is 0.35nm~0.7nm；Its is of same size, is 500 μm~1.5mm；The width of its overlapping region is 3 μm~4.5 μm.
9. a kind of organic polymer optical waveguide absorption-type light modulation based on burial type Graphene electrodes as described in claim 1 Device, it is characterised in that: the material of left electrode (7) and right electrode (4) is silver, any one or a variety of compositions in gold, aluminium, platinum Alloy；The left electrode (7) and right electrode (4) and the first organic polymer waveguide sandwich layer (9) and the second organic polymer object wave It is equal to lead the distance between sandwich layer (6), is 100 μm~800 μm；Left electrode (7) and right electrode (4) it is of same size, be 500 μm ~1000 μm；Thickness is identical, is 100nm~300nm.
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