CN105759467A - Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides - Google Patents
Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides Download PDFInfo
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- CN105759467A CN105759467A CN201610345371.2A CN201610345371A CN105759467A CN 105759467 A CN105759467 A CN 105759467A CN 201610345371 A CN201610345371 A CN 201610345371A CN 105759467 A CN105759467 A CN 105759467A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000005387 chalcogenide glass Substances 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000835 fiber Substances 0.000 claims description 89
- 125000006850 spacer group Chemical group 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 50
- 239000002127 nanobelt Substances 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 19
- 229920006395 saturated elastomer Polymers 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910017000 As2Se3 Inorganic materials 0.000 claims description 5
- 229910052958 orpiment Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 claims description 4
- NCMAYWHYXSWFGB-UHFFFAOYSA-N [Si].[N+][O-] Chemical class [Si].[N+][O-] NCMAYWHYXSWFGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 154
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910021389 graphene Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
- G02F1/0113—Glass-based, e.g. silica-based, optical waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses an intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides, and belongs to intermediate infrared modulators in the field of optical communications.According to the intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides, the modulation rate of the intermediate infrared modulator is effectively increased.According to the technical scheme, the intermediate infrared modulator comprises a substrate layer, the first optical waveguide is arranged in the middle of the upper surface of the substrate layer, the portions, on the left side and the right side of the first optical waveguide, of the upper surface of the substrate layer are provided with a first dielectric filling layer and a second dielectric filling layer respectively, a first isolation dielectric layer, a first black phosphorus layer, a second isolation dielectric layer, a second black phosphorus layer and a third isolation dielectric layer are arranged on the first optical waveguide.The second optical waveguide is arranged on the upper surface of the third isolation dielectric layer.The first black phosphorus layer is connected with a first electrode.The second black phosphorus layer is connected with a second electrode.The first optical waveguide and the second optical waveguide are made of chalcogenide glass.
Description
Technical field
The invention belongs to optical communication field, relate to a kind of mid-infrared electrooptic modulator.
Background technology
Photomodulator, as the basis of optical communication system and critical component, is always up the focus of integrated optics research.Its function is to change by characteristics such as the intensity of light carrier of photomodulator, phase place, polarizations, is loaded on light carrier by the signal of telecommunication.In recent years, the development of integrated optical device particularly silica-based integrated opto-electronic device is very rapid, various novel optics constantly are in the news out, its production cost is low, performance reliability is high, and can combine with Circuits System, forms multi-functional photoelectricity mixing module and system, to be applied widely in communication, sensing, the various fields such as military, biological, be there is boundless prospect.
Middle-infrared band is an important wave band in electromagnetic wave, and it has highly important application in the fields such as sensing, environmental monitoring, biomedical applications, thermal imaging.Middle infrared material based on this service band plays an important role in modern defense and Optoelectronic Countermeasure Technology.Along with the development of infrared technique, the combination property of centering infrared device it is also proposed higher requirement, for instance, there is high optical quality at service band, easily realize large scale high optical quality and prepared by complicated shape, low cost etc..Up to the present, the research great majority of silicon based optoelectronic devices are near infrared band, and mainly based on 1550nm, silica-based middle infrared wavelength device is due to reasons such as material restrictions, and research and development is slower.But mid-infrared silicon based optoelectronic devices has plurality of advantages: much larger than the plasma dispersion effect of near infrared band, two-photon absorption weakens significantly than near infrared band, process is bigger thus making simple, cost reduction, the structure being difficult to make of more near infrared bands.Therefore, studying and making silica-based mid-infrared device is an extremely important and significant problem, and namely mid-infrared manipulator is device important in mid-infrared application, amplitude or the phase place of mid-infrared manipulator energy centering infrared waves are modulated, and are the important and requisite elements in field such as mid-infrared wireless telecommunications, highly sensitive Molecular Detection.
Prior art, the waveguide material that manipulator adopts is generally Lithium metaniobate material, though part light can be modulated by Lithium metaniobate material when without other auxiliary materials.But, when mid-infrared light is modulated by the manipulator using Lithium metaniobate material to make, mid-infrared light cannot pass through Lithium metaniobate material, thus the modulator applications that cannot be made by Lithium metaniobate material is in the modulation of mid-infrared light.
nullChalcogenide glass refers to S，Se，Te is master and introduces the glass that other metalloid element a certain amount of is formed，It has excellent saturating mid-infrared and splendid athermal performance (see document LiL,ZouY,MusgravesJD,etal.Chalcogenideglassplanarphotonics:frommid-IRsensingto3-Dflexiblesubstrateintegration[J].ProceedingsofSPIE-TheInternationalSocietyforOpticalEngineering,2013,8600(4):86000K-86000K-6).Traditional integrated optical material, is restricted when applying in mid-infrared field, and chalcogenide glass can overcome the restriction of this respect.Chalcogenide glass has longer long wavelength limit, can cover 3 atmospheric windows.Additionally, chalcogenide glass is as amorphous material, it is not necessary to strict Lattice Matching, it is possible to integrated with any backing material.This is that it has very wide range of application in integrated optics field.
Graphene is that the thinnest in known materials, most rigid, structure are also highly stable.As the Two-dimensional Carbon atomic monolayer of a kind of netted lattice structure, it not only has excellent electric conductivity, and the speed at room temperature transmitting electronics is all faster than known conductor, and presents distinguished optical characteristics.Graphene has the carrier mobility of wide spectral absorption bandwidth and superelevation, and these characteristics make it can give full play to its advantage on an optical modulator.For this, application number be 201610151555.5 patent of invention also disclose that a kind of mid-infrared electrooptic modulator based on graphene-sulfur system glass micro-ring resonant cavity, it includes basal layer, direct light waveguide and micro-ring resonant cavity waveguide all imbed basal layer, one section of upper surface of micro-ring resonant cavity waveguide is equipped with the first graphene layer, the second graphene layer, it is equipped with sealing coat between the first graphene layer and the second graphene layer, and extends out from micro-ring resonant cavity waveguide both sides respectively and connect the first electrode and the second electrode respectively.The direct light waveguide of this mid-infrared electrooptic modulator and micro-ring resonant cavity waveguide adopt chalcogenide glass as waveguide material, and chalcogenide glass has good amorphous character and a heat stability, and middle infrared spectrum are had wider and smooth through window；Tune Graphene by applying bias voltage and the absorption of light is regulated and controled the optical coupling between direct light waveguide and micro-ring resonant cavity waveguide, it is achieved the modulation of centering infrared signal.And this mid-infrared electrooptic modulator has higher modulation depth, high modulation rate and the advantage compatible with CMOS technology.
Summary of the invention
But, owing to Lithium metaniobate material cannot be applied to the modulation of mid-infrared light, though and chalcogenide glass Graphene can be suitably used for the modulation of mid-infrared light, but adopt the modulation to mid-infrared light of the manipulator of chalcogenide glass Graphene, Graphene is not for having band gap, poor with active device compatibility issue.
The goal of the invention of the present invention is in that: for prior art Problems existing, it is provided that one, based on black phosphorus chalcogenide glass fiber waveguide mid-infrared electrooptic modulator, is effectively improved the modulation rate of this mid-infrared electrooptic modulator, compatible with active optical component better.
To achieve these goals, the technical solution used in the present invention is:
A kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, including substrate layer, the medium position of described substrate layer upper surface is provided with the first fiber waveguide, the left side being positioned at the first fiber waveguide on the upper surface of described substrate layer is provided with the first dielectric fill layer, the right side being positioned at the first fiber waveguide on the upper surface of described substrate layer is provided with the second dielectric fill layer, be cascading on the upper surface of described first fiber waveguide the first spacer medium layer from lower to upper, first black phosphorus layer, second spacer medium layer, second black phosphorus layer, 3rd spacer medium layer, the upper surface of described 3rd spacer medium layer is provided with the second fiber waveguide, described first black phosphorus layer extends from the left side of the first fiber waveguide and is connected with the first electrode, second black phosphorus layer extends from the right side of the first fiber waveguide and is connected with the second electrode；The material of described first fiber waveguide and the second fiber waveguide is chalcogenide glass.
Wherein, the material of described chalcogenide glass is Ge23Sb7S70、As2Se3Or As2S3。
Wherein, the material of described first black phosphorus layer and the second black phosphorus layer is passivation black phosphorus nano belt.
Wherein, described passivation black phosphorus nano belt is hydrogen saturated passivation black phosphorus nano belt or the saturated passivation black phosphorus nano belt of fluorine.
Wherein, the material of described first spacer medium layer, the second spacer medium layer and the 3rd spacer medium layer is insulant.
Wherein, described insulant is Si oxide, silicon nitrogen oxides or boron nitride.
Wherein, the thickness of described first spacer medium layer and the 3rd spacer medium layer is 5 to 12nm, and the thickness of described second spacer medium layer is 5 to 65nm.
Wherein, described substrate layer, the first dielectric fill layer and the second dielectric fill layer are made by low index dielectric material, and the optical index of the low index dielectric material of described substrate layer, the first dielectric fill layer and the second dielectric fill layer is respectively less than the first fiber waveguide and the optical index of the second fiber waveguide.
Wherein, the material of described first electrode and the second electrode is gold, silver platinum or copper.
Wherein, the upper surface of described first fiber waveguide is higher than the upper surface or concordant with the upper surface of the first dielectric fill layer of the first dielectric fill layer, and the upper surface of described second dielectric fill layer is higher than the upper surface or concordant with the upper surface of the first fiber waveguide of the first fiber waveguide.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows:
1, provided by the invention based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, this manipulator adopts chalcogenide glass as waveguide material, makes mid-infrared electrooptic modulator have wider and smooth middle infrared spectrum through window；This mid-infrared electrooptic modulator also stacking is provided with two-layer black phosphorus layer, black phosphorus is the two-dimentional phosphorus atoms layer of a kind of monolayer honeycomb shape lattice structure, it has extraordinary semiconductor property, has very high leakage current modulation rate (being 10000 times of Graphene), and has saturated absorption characteristic；And black phosphorus has the quasiconductor band gap of a 0.3eV, being equivalent to the photon wavelength of 4.1 μm, and have wide spectral absorption, black phosphorus has good electron mobility (～1000cm2/ Vs) so that this mid-infrared electrooptic modulator can have a significantly high modulation rate, and compatible with traditional cmos process, mid-infrared electrooptic modulator easily manufactured, quick；Additionally, this mid-infrared electrooptic modulator can be substantially reduced the volume of manipulator, be conducive to the integrated of optics.Additionally, black phosphorus layer is embedded in the middle of fiber waveguide, laying the structure of light guide surface relative to level, black phosphorus is more abundant with the interaction of light, thus improving the modulation rate of mid-infrared electrooptic modulator.
2, provided by the invention based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, the black phosphorus nano belt using passivation makes its character be easier to be modulated by extra electric field, thus improving the modulation rate of mid-infrared electrooptic modulator, additionally, black phosphorus to be direct band gap material compatible with active optical component better.
3, provided by the invention based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, the upper surface of the first fiber waveguide is higher than the upper surface or concordant with the upper surface of the first dielectric fill layer of the first dielectric fill layer, the upper surface of the second dielectric fill layer is higher than the upper surface or concordant with the upper surface of the first fiber waveguide of the first fiber waveguide, so that the first spacer medium layer, first black phosphorus layer, second spacer medium layer, second black phosphorus layer, can effectively contact between 3rd spacer medium layer, upper layer substance mass-energy enough covers lower floor's material, thus improving the modulation rate of mid-infrared electrooptic modulator.
Accompanying drawing explanation
Fig. 1 is the three dimensional structure schematic diagram of the present invention；
Fig. 2 is the front view of the present invention；
Fig. 3 be in the present invention under the saturated passivation pattern of hydrogen the band gap of the black phosphorus nano belt of two class different structures with electric field change schematic diagram；
Fig. 4 is the light intensity schematic diagram at mid-infrared manipulator optical waveguide portion place of the present invention；
Wherein, accompanying drawing is labeled as: 1 substrate layer, 2 first dielectric fill layer, 3 second dielectric fill layer, 4 first fiber waveguides, 5 first spacer medium layers, 6 first black phosphorus layers, 7 second spacer medium layers, 8 second black phosphorus layers, 9 the 3rd spacer medium layers, 10 second fiber waveguides, 11 first electrodes, 12 second electrodes.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make the purpose of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention.
A kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, this mid-infrared electrooptic modulator includes substrate layer 1, and this substrate layer 1 can be selected for conductor oxidate SiO2Material is made, and the refractive index of this substrate layer 1 is 3.47.The centre position of the upper surface of this substrate layer 1 is provided with the first fiber waveguide 4, and the bottom of this first fiber waveguide 4 is located immediately on the upper surface of substrate layer 1 and fits with the upper surface of substrate layer 1.The left side of this first fiber waveguide 4 is provided with the first dielectric fill layer 2, the right side of this first fiber waveguide 4 is provided with the second dielectric fill layer 3, first dielectric fill layer the 2, second dielectric fill layer 3 is respectively positioned on above substrate layer 1, and the lower surface of first dielectric fill layer the 2, second dielectric fill layer 3 is all fitted with the upper surface of substrate layer 1.In order to enable all the other structures on substrate layer 1 effectively to contact and mutually to cover, thus by the upper surface of the first fiber waveguide 4 higher than the upper surface or concordant with the upper surface of the first dielectric fill layer 2 of the first dielectric fill layer 2, the upper surface of the second dielectric fill layer 3 is higher than the upper surface or concordant with the upper surface of the first fiber waveguide 4 of the first fiber waveguide 4；Can certainly the upper surface of the first fiber waveguide 4 lower than the upper surface of the first dielectric fill layer 2 or concordant with the upper surface of the first dielectric fill layer 2, the upper surface of the second dielectric fill layer 3 is lower than the upper surface of the first fiber waveguide 4 or concordant with the upper surface of the first fiber waveguide 4.Above-mentioned first dielectric fill layer the 2, second dielectric fill layer 3 all can be selected for conductor oxidate SiO2Material is made, and the refractive index of this substrate layer 1 is 3.47.The width of the first fiber waveguide 4 on substrate layer 1 is 0.4um, highly for the chalcogenide glass material of 0.17um, the optical index of chalcogenide glass material is 2, and the material of this chalcogenide glass is Ge23Sb7S70、As2Se3Or As2S3.Being equipped with the first spacer medium layer 5 on the upper surface of this first fiber waveguide 4, the left end of this first spacer medium layer 5 stretches out and covers the surface area of the first fiber waveguide 4 and left side substrate layer 1.Being equipped with the first black phosphorus layer 6 on this first spacer medium layer 5, this first black phosphorus layer 6 extends from the left side of the first fiber waveguide 4 and covers the first spacer medium layer 5 of the first fiber waveguide 4 and left side substrate layer 1 upper area.Left side on this first black phosphorus layer 6 is provided with the first electrode 11, and this first electrode 11 electrically connects with the first black phosphorus layer 6.Being equipped with the second spacer medium layer 7 on this first black phosphorus layer 6, the right-hand member of this second spacer medium layer 7 stretches out and covers the first black phosphorus layer 6 of the first fiber waveguide 4 upper area and the surface area of right side substrate layer 1.Being equipped with the second black phosphorus layer 8 on this second spacer medium layer 7, this second black phosphorus layer 8 extends and covers the first fiber waveguide 4 and has the first black phosphorus layer 6 of side substrate layer 1 upper area from the right side of the first fiber waveguide 4.Right side on this second black phosphorus layer 8 is provided with the second electrode 12, and this second electrode 12 electrically connects with the second black phosphorus layer 8.Being equipped with the 3rd spacer medium layer 9 on this second black phosphorus layer 8, the 3rd spacer medium layer 9 at least covers on the second black phosphorus layer 8 being positioned at the first fiber waveguide 4 upper area.The upper surface of the 3rd spacer medium layer 9 is provided with the second fiber waveguide 10, this second fiber waveguide 10 is positioned at the surface of the first fiber waveguide 4, and the width of this second fiber waveguide 10 be 0.4um, highly for the chalcogenide glass material of 0.17um, the optical index of chalcogenide glass material is 2, and the material of this chalcogenide glass is Ge23Sb7S70、As2Se3Or As2S3.The material of the first black phosphorus layer 6 and the second black phosphorus layer 8 is passivation black phosphorus nano belt, wherein passivation black phosphorus nano belt can be hydrogen saturated passivation black phosphorus nano belt or the saturated passivation black phosphorus nano belt of fluorine, and the width of the lap of the first black phosphorus layer 6 and the second black phosphorus is 0.6um.The material of first spacer medium layer the 5, second spacer medium layer 7 and the 3rd spacer medium layer 9 is insulant, wherein this insulant can be Si oxide, silicon nitrogen oxides or boron nitride, and first spacer medium layer the 5, the 3rd spacer medium layer 9 adopt hBN (hexagonal boron nitride) material of 5 to 12nm thickness, second spacer medium layer 7 adopts hBN (hexagonal boron nitride) material of 5 to 65nm thickness, and the refractive index of this hBN material is 1.98.During experiment, the first spacer medium layer the 5, the 3rd spacer medium layer 9 adopts hBN (hexagonal boron nitride) material of 5nm thickness, and the second spacer medium layer 7 adopts hBN (hexagonal boron nitride) material of 10nm thickness.The material of the first electrode 11 and the second electrode 12 is gold, silver platinum or copper.
The use of chalcogenide glass makes the present invention have ultralow light loss, and insertion loss is little, and has wider and smooth middle infrared spectrum through window.Black phosphorus material has significantly high electron mobility, and this bright electrooptic modulator based on black phosphorus can have significantly high modulation rate.
The operation principle of the present invention is: during the work of mid-infrared electrooptic modulator, during photomodulator work, bias voltage acts on black phosphorus layer by metal level, cyclically-varying along with electric field, its band gap also there will be periodic change, because the change of band gap can change the black phosphorus absorption characteristic to special wavelength light, and then control propagation and the cut-off of special wavelength light, and then realize the modulation of light.
Fig. 3 is that hydrogen passivation is passivated the black phosphorus nano belt band gap schematic diagram with electric field change with halogen atom, it can be seen that along with the enhancing of electric field, its band-gap energy declines rapidly.
Fig. 4 is incident illumination when being 2.5 μm, applies voltages on mid-infrared light manipulator, sulfur system waveguides sections light intensity analogous diagram, it can be seen that black phosphorus is in the strongest part of light intensity, it is possible to reach good modulation effect.
Embodiment 1
nullA kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator，Including substrate layer 1，The medium position of described substrate layer 1 upper surface is provided with the first fiber waveguide 4，The left side being positioned at the first fiber waveguide 4 on the upper surface of described substrate layer 1 is provided with the first dielectric fill layer 2，The right side being positioned at the first fiber waveguide 4 on the upper surface of described substrate layer 1 is provided with the second dielectric fill layer 3，Be cascading on the upper surface of described first fiber waveguide 4 first spacer medium layer 5 from lower to upper、First black phosphorus layer 6、Second spacer medium layer 7、Second black phosphorus layer 8、3rd spacer medium layer 9，The upper surface of described 3rd spacer medium layer 9 is provided with the second fiber waveguide 10，Described first black phosphorus layer 6 extends from the left side of the first fiber waveguide 4 and is connected with the first electrode 11，Second black phosphorus layer 8 extends from the right side of the first fiber waveguide 4 and is connected with the second electrode 12；The material of described first fiber waveguide 4 and the second fiber waveguide 10 is chalcogenide glass.
Embodiment 2
On the basis of embodiment one, the material of described chalcogenide glass is Ge23Sb7S70、As2Se3Or As2S3。
Embodiment 3
On the basis of embodiment one or embodiment two, the material of described first black phosphorus layer 6 and the second black phosphorus layer 8 is passivation black phosphorus nano belt.
As preferably, described passivation black phosphorus nano belt is hydrogen saturated passivation black phosphorus nano belt or the saturated passivation black phosphorus nano belt of fluorine.
Embodiment 4
On the basis of above-described embodiment, the material of described first spacer medium layer the 5, second spacer medium layer 7 and the 3rd spacer medium layer 9 is insulant.
As preferably, described insulant is Si oxide, silicon nitrogen oxides or boron nitride.
As preferably, the thickness of described first spacer medium layer 5 and the 3rd spacer medium layer 9 is 5 to 12nm, and the thickness of described second spacer medium layer 7 is 5 to 65nm.
Embodiment 5
On the basis of above-described embodiment, described substrate layer the 1, first dielectric fill layer 2 and the second dielectric fill layer 3 are made by low index dielectric material, and the optical index of the low index dielectric material of described substrate layer the 1, first dielectric fill layer 2 and the second dielectric fill layer 3 is respectively less than the optical index of the first fiber waveguide 4 and the second fiber waveguide 10.
Embodiment 6
On the basis of above-described embodiment, the material of described first electrode 11 and the second electrode 12 is gold, silver platinum or copper.
Embodiment 7
On the basis of above-described embodiment, the upper surface of described first fiber waveguide 4 is higher than the upper surface or concordant with the upper surface of the first dielectric fill layer 2 of the first dielectric fill layer 2, and the upper surface of described second dielectric fill layer 3 is higher than the upper surface or concordant with the upper surface of the first fiber waveguide 4 of the first fiber waveguide 4.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
- null1. one kind based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator，Including substrate layer (1)，It is characterized in that: the medium position of described substrate layer (1) upper surface is provided with the first fiber waveguide (4)，The left side being positioned at the first fiber waveguide (4) on the upper surface of described substrate layer (1) is provided with the first dielectric fill layer (2)，The right side being positioned at the first fiber waveguide (4) on the upper surface of described substrate layer (1) is provided with the second dielectric fill layer (3)，Be cascading on the upper surface of described first fiber waveguide (2) the first spacer medium layer (5) from lower to upper、First black phosphorus layer (6)、Second spacer medium layer (7)、Second black phosphorus layer (8)、3rd spacer medium layer (9)，The upper surface of described 3rd spacer medium layer (9) is provided with the second fiber waveguide (10)，Described first black phosphorus layer (6) extends from the left side of the first fiber waveguide (4) and is connected with the first electrode (11)，Second black phosphorus layer (8) extends from the right side of the first fiber waveguide (4) and is connected with the second electrode (12)；The material of described first fiber waveguide (4) and the second fiber waveguide (10) is chalcogenide glass.
- 2. as claimed in claim 1 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: the material of described chalcogenide glass is Ge23Sb7S70、As2Se3Or As2S3。
- 3. as claimed in claim 1 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: the material of described first black phosphorus layer (6) and the second black phosphorus layer (8) is passivation black phosphorus nano belt.
- 4. as claimed in claim 3 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: described passivation black phosphorus nano belt is hydrogen saturated passivation black phosphorus nano belt or the saturated passivation black phosphorus nano belt of fluorine.
- 5. as claimed in claim 1 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: the material of described first spacer medium layer (5), the second spacer medium layer (7) and the 3rd spacer medium layer (9) is insulant.
- 6. as claimed in claim 5 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: described insulant is Si oxide, silicon nitrogen oxides or boron nitride.
- 7. as claimed in claim 6 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterized in that: the thickness of described first spacer medium layer (5) and the 3rd spacer medium layer (9) is 5 to 12nm, the thickness of described second spacer medium layer (7) is 5 to 65nm.
- 8. as claimed in claim 1 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterized in that: described substrate layer (1), the first dielectric fill layer (2) and the second dielectric fill layer (3) are made by low index dielectric material, and the optical index of the low index dielectric material of described substrate layer (1), the first dielectric fill layer (2) and the second dielectric fill layer (3) is respectively less than the first fiber waveguide (4) and the optical index of the second fiber waveguide (10).
- 9. as claimed in claim 1 a kind of based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterised in that: the material of described first electrode (11) and the second electrode (12) is gold, silver platinum or copper.
- 10. the one as described in any one of claim 1-9 is based on black phosphorus chalcogenide glass fiber waveguide mid-infrared manipulator, it is characterized in that: the upper surface of described first fiber waveguide (4) is higher than the upper surface or concordant with the upper surface of the first dielectric fill layer (2) of the first dielectric fill layer (2), and the upper surface of described second dielectric fill layer (3) is higher than the upper surface or concordant with the upper surface of the first fiber waveguide (2) of the first fiber waveguide (4).
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199838A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of black phosphorus mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN106199837A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of Graphene mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN106918928A (en) * | 2017-03-31 | 2017-07-04 | 深圳大学 | A kind of black phosphorus optical modulator and preparation method thereof |
| CN108152998A (en) * | 2017-12-25 | 2018-06-12 | 电子科技大学 | A kind of adjustable optical attenuator based on multistage black phosphorus absorptive unit |
| CN109541745A (en) * | 2018-12-14 | 2019-03-29 | 电子科技大学 | A kind of follow-on micro-ring resonator in coupled zone and preparation method thereof |
| CN112067569A (en) * | 2020-08-19 | 2020-12-11 | 吉林大学 | Slit optical waveguide sensor based on surface-enhanced infrared absorption spectrum and preparation and detection methods thereof |
| CN113270517A (en) * | 2020-01-17 | 2021-08-17 | 淮阴工学院 | Preparation method of waveguide-integrated low-dimensional material heterojunction photoelectric detector |
| CN114063203A (en) * | 2021-11-11 | 2022-02-18 | 浙江传媒学院 | Surface plasmon optical modulator and photoelectric device |
| CN115224134A (en) * | 2022-07-05 | 2022-10-21 | 浙江大学 | Hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN103969850A (en) * | 2014-05-08 | 2014-08-06 | 电子科技大学 | Structural design for novel electrooptical modulator based on graphene |
| CN105022178A (en) * | 2015-08-18 | 2015-11-04 | 电子科技大学 | Graphene phase type light modulator based on planar waveguide |
-
2016
- 2016-05-23 CN CN201610345371.2A patent/CN105759467A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN103969850A (en) * | 2014-05-08 | 2014-08-06 | 电子科技大学 | Structural design for novel electrooptical modulator based on graphene |
| CN105022178A (en) * | 2015-08-18 | 2015-11-04 | 电子科技大学 | Graphene phase type light modulator based on planar waveguide |
Non-Patent Citations (6)
| Title |
|---|
| CHARLES LIN等: "Multilayer black phosphorus as a versatile mid-infrared electro-optic material", 《NANO LETTERS》 * |
| KINAM KIM等: "A role for graphene in silicon-based semiconductor devices", 《NATURE》 * |
| LEI YE等: "Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction", 《ACS PHOTONICS》 * |
| RUI ZHANG等: "Broadband Black Phosphorus Optical Modulator in the Spectral Range from Visible to Mid-Infrared", 《ADVANDED OPTICAL MATERIALS》 * |
| S.B.LU等: "Broadband nonlinear optical response in multilayer black phosphorus：an emerging infrared and mid-infrared optical material", 《OPTICS EXPRESS》 * |
| 干福熹等: "《光子学玻璃及应用》", 31 December 2011, 上海：上海科学技术出版社 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106199837A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of Graphene mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN106199838A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of black phosphorus mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN106918928A (en) * | 2017-03-31 | 2017-07-04 | 深圳大学 | A kind of black phosphorus optical modulator and preparation method thereof |
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| CN109541745B (en) * | 2018-12-14 | 2020-08-11 | 电子科技大学 | Micro-ring resonator with improved coupling area and manufacturing method thereof |
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